CN102545653A - 半导体器件测试系统的分段式双重保护型电源 - Google Patents
半导体器件测试系统的分段式双重保护型电源 Download PDFInfo
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- CN102545653A CN102545653A CN2011104453581A CN201110445358A CN102545653A CN 102545653 A CN102545653 A CN 102545653A CN 2011104453581 A CN2011104453581 A CN 2011104453581A CN 201110445358 A CN201110445358 A CN 201110445358A CN 102545653 A CN102545653 A CN 102545653A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000012360 testing method Methods 0.000 title claims abstract description 13
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 238000012372 quality testing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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CN201110445358.1A CN102545653B (zh) | 2011-12-28 | 2011-12-28 | 半导体器件测试系统的分段式双重保护型电源 |
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CN201110445358.1A CN102545653B (zh) | 2011-12-28 | 2011-12-28 | 半导体器件测试系统的分段式双重保护型电源 |
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CN102545653A true CN102545653A (zh) | 2012-07-04 |
CN102545653B CN102545653B (zh) | 2015-03-11 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109039077A (zh) * | 2018-08-03 | 2018-12-18 | 上海隽玺电子科技有限公司 | 一种用于爆炸危险场所可安装于增安型箱体内的本安电源 |
CN111289867A (zh) * | 2020-02-24 | 2020-06-16 | 上海御渡半导体科技有限公司 | 一种半导体自动化测试系统的自保持式供电装置及方法 |
CN111487906A (zh) * | 2020-04-21 | 2020-08-04 | 上海亨通海洋装备有限公司 | 水下数据采集控制器及水下接驳盒 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10108465A (ja) * | 1996-10-01 | 1998-04-24 | Tokyo Electron Ltd | 電力使用系の保護回路 |
CN1254216A (zh) * | 1998-09-04 | 2000-05-24 | 杨泰和 | 适用于广电压变动范围温控开关控制保持型充电电路 |
CN102035361A (zh) * | 2010-12-13 | 2011-04-27 | 中国神华能源股份有限公司 | 电压调节装置 |
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2011
- 2011-12-28 CN CN201110445358.1A patent/CN102545653B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10108465A (ja) * | 1996-10-01 | 1998-04-24 | Tokyo Electron Ltd | 電力使用系の保護回路 |
CN1254216A (zh) * | 1998-09-04 | 2000-05-24 | 杨泰和 | 适用于广电压变动范围温控开关控制保持型充电电路 |
CN102035361A (zh) * | 2010-12-13 | 2011-04-27 | 中国神华能源股份有限公司 | 电压调节装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109039077A (zh) * | 2018-08-03 | 2018-12-18 | 上海隽玺电子科技有限公司 | 一种用于爆炸危险场所可安装于增安型箱体内的本安电源 |
CN111289867A (zh) * | 2020-02-24 | 2020-06-16 | 上海御渡半导体科技有限公司 | 一种半导体自动化测试系统的自保持式供电装置及方法 |
CN111487906A (zh) * | 2020-04-21 | 2020-08-04 | 上海亨通海洋装备有限公司 | 水下数据采集控制器及水下接驳盒 |
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CN102545653B (zh) | 2015-03-11 |
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Address after: 528000, Guangdong City, Foshan Province Nanhai District Guangming Village Road 16, Foshan linkage technology industry Co., Ltd. plant Applicant after: Foshan Power Techlaser Technology Industry Co., Ltd. Address before: 528000, Guangdong province Chancheng Foshan Huayuan East Road No. 13 development building 21H, I, J, K, Foshan linkage technology industry Co., Ltd. Applicant before: Foshan Power Techlaser Technology Industry Co., Ltd. |
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Denomination of invention: Segmented dual-protection-type power supply for semiconductor device testing system Effective date of registration: 20181120 Granted publication date: 20150311 Pledgee: Shunde Guangdong rural commercial bank Nanhai Branch of Limited by Share Ltd Pledgor: Foshan Power Techlaser Technology Industry Co., Ltd. Registration number: 2018440000325 |
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Address after: 528000, Guangdong City, Foshan Province Nanhai District Guangming Village Road 16, Foshan linkage technology industry Co., Ltd. plant Patentee after: Foshan Linkage Technology Co., Ltd. Address before: 528000, Guangdong City, Foshan Province Nanhai District Guangming Village Road 16, Foshan linkage technology industry Co., Ltd. plant Patentee before: Foshan Power Techlaser Technology Industry Co., Ltd. |
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Address after: No.16 Guangming Avenue, new light source industrial base, national high tech Zone, Nanhai District, Foshan City, Guangdong Province, 528200 Patentee after: Foshan Linkage Technology Co.,Ltd. Address before: 528000, Guangdong City, Foshan Province Nanhai District Guangming Village Road 16, Foshan linkage technology industry Co., Ltd. plant Patentee before: Foshan Linkage Technology Co.,Ltd. |
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Date of cancellation: 20210506 Granted publication date: 20150311 Pledgee: Shunde Guangdong rural commercial bank Nanhai Branch of Limited by Share Ltd. Pledgor: Foshan Liandong Technology Industrial Co.,Ltd. Registration number: 2018440000325 |