CN102544677A - Substrate integrated waveguide magic T - Google Patents
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- CN102544677A CN102544677A CN2011104114991A CN201110411499A CN102544677A CN 102544677 A CN102544677 A CN 102544677A CN 2011104114991 A CN2011104114991 A CN 2011104114991A CN 201110411499 A CN201110411499 A CN 201110411499A CN 102544677 A CN102544677 A CN 102544677A
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- 238000010168 coupling process Methods 0.000 claims abstract description 33
- 238000005859 coupling reaction Methods 0.000 claims abstract description 33
- 230000010354 integration Effects 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 238000002955 isolation Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
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- 238000005520 cutting process Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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Abstract
A substrate integrated waveguide magic T belongs to the technical field of microwave devices. The invention comprises an upper layer substrate and a lower layer substrate which are provided with coupling seams and have waveguide structures, wherein the lower layer substrate is provided with an H-T branch of a magic T, the upper layer substrate realizes an E-T branch through the coupling seams, the two layers of substrates are overlapped in parallel, a waveguide is formed by through holes on the substrates, the transverse edge of the waveguide of the upper layer substrate is parallel to the transverse edge of the waveguide of the lower layer substrate, and the longitudinal edge of the waveguide of the upper layer substrate is parallel to the longitudinal edge of the waveguide of the lower layer substrate. The invention adopts the substrate integrated waveguide theory, so that the volume of the magic T is greatly reduced, and particularly, the magic T is only two layers of dielectric plates in thickness in height and is easy to integrate with circuits such as microstrip lines and the like.
Description
Technical field
The invention belongs to the microwave device technical field, particularly design and the manufacturing technology of plane integrated waveguide evil spirit T.
Background technology
As a kind of microwave bridge commonly used, magic T has irreplaceable effect in microwave circuits.It can be widely used in the required sum-difference network of E-H tuner, impedance measurement, duplexer and radar system.For conventional waveguide evil spirit T, be ET through the public plane of symmetry, the combination of HT joint realizes, it has advantages such as power capacity height, port identity are good, but it is bigger to exist size, shortcomings such as tuning difficulty.
Along with the development of modern microwave circuit, miniaturization of devices and the integrated very necessity that seems have proposed the integrated guided wave technology in a kind of plane thus---substrate integration wave-guide (SIW).It is through being on the low loss dielectric substrate of metal level at last bottom surface, utilizes periodicity plated-through hole array to realize, has gathered the advantage of traditional metal waveguide and microstrip circuit; As: high Q value, high power capacity, less size; Be easy to integrated etc.; Because total is to form plated-through hole on the dielectric substrate to form, its preparation can accurately realize through PCB or LTCC, be fit to very much be applied to the design of microwave circuit simultaneously.In recent years, on basis, realized high performance filter to the research of substrate integrated wave guide structure transmission characteristic, directional coupler, duplexer, microwave devices such as power divider have promoted the development of substrate integrated waveguide technology greatly.
Utilize substrate integrated waveguide technology to carry out the design of magic T, not only can reduce the volume of magic T, make device miniaturization and lightness, and more help the integrated of circuit.Yet for substrate integrated wave guide structure, its E plane tie is difficult for design, and because the discontinuity of joint junction produces mismatch, influences performance, and therefore, the realization of E-T joint and the impedance matching of junction just become the key problem that SIW evil spirit T realizes.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of substrate integration wave-guide evil spirit T and method for designing thereof, and (30.0GHz～31.3GHz) has preferable performance and port identity to the magic T that makes design in microwave band.
The technical scheme that the present invention solve the technical problem employing is that a kind of substrate integration wave-guide evil spirit T is characterized in that; Comprise the two-layer substrate up and down that is provided with coupling slot with waveguiding structure; Wherein, lower floor's substrate is provided with the H-T branch of magic T, and the upper strata substrate is realized E-T branch through coupling slot; Two layers of substrate is parallel overlapping; Waveguide is made up of on-chip through hole, and the widthwise edge of upper strata substrate waveguide is along the widthwise edge edge that is parallel to lower floor's substrate waveguide, and vertical edge of upper strata substrate waveguide is parallel to vertical edge of lower floor's substrate waveguide.
Say that further the coupling slot position of two layers of substrate is corresponding up and down, an end of coupling slot is provided with perceptual metal throuth hole, and the coupling slot of upper strata substrate is arranged at down metal covering, and the coupling slot of lower floor's substrate is arranged at metal covering.
Lower floor's substrate is provided with main waveguide and branch-waveguide, forms axisymmetric H-T branch, and the center line of branch-waveguide is perpendicular to the center line of main waveguide, and coupling slot is along the symmetry axis setting of H-T branch.
The concrete structure parameter is:
The invention has the beneficial effects as follows:
1, adopts substrate integration wave-guide theoretical, the volume of magic T is reduced greatly, particularly be merely the thickness of two layer medium plate on the height, be easy to integrated with circuit such as microstrip line.
2, the center position at the H of lower floor arm is driveed in the coupling slit, makes E arm H arm reach isolation naturally, has higher isolation, helps tuning.
3, total only need belong to through hole and coupling slit by karat gold on dielectric-slab, and technology is simple, is easy to produce.
Description of drawings
Fig. 1 is the overall structure of substrate integration wave-guide evil spirit T according to the invention.
Fig. 2 is the vertical view of substrate integration wave-guide evil spirit T understructure of the present invention.
Fig. 3 is the vertical view of substrate integration wave-guide evil spirit T superstructure of the present invention.
Fig. 4 is each port return loss plot of the specific embodiment of the invention one.
Fig. 5 is the isolation of the specific embodiment of the invention one and divides figure equally.
Fig. 6 is the amplitude imbalance degree figure of the specific embodiment of the invention one.
Fig. 7 is the phase unbalance degree figure of the specific embodiment of the invention one.
Fig. 8 is the perception coupling metal throuth hole offset position sketch map of lower floor of the present invention substrate, and wherein dotted line is represented the center line of main substrate waveguide integrated waveguide 1.
Fig. 9 is the offset position sketch map of upper strata of the present invention substrate, and wherein offz is a lateral offset, and offx is a longitudinal biasing.
Embodiment
The present invention is four port devices that are made up of two layers of substrate integrated wave guide structure up and down, like Fig. 1.Wherein understructure is the H-T branch of magic T, and superstructure realizes the function of E-T branch through coupling slot.
The H-T of lower floor's substrate branches into axially symmetric structure; H arm branch is drawn by the symmetry axis of lower floor's substrate (main substrate) integrated waveguide; Or be called the plane of symmetry and draw; And added perceptual metal throuth hole realization coupling, formed the structure that is similar to T type power splitter, the coupling that realization of coupling slit and E arm are opened in the metal level center on the H arm simultaneously.Its vertical view is as shown in Figure 2.
Upper strata E arm is different with conventional waveguide evil spirit T, and it is parallel to the H-T joint of lower floor, and realizes the close coupling between main substrate waveguide and E arm through the coupling slit, and vertical view is as shown in Figure 3.
Performing step of the present invention is following: at first, determine suitable SIW width according to the required working frequency range and the structural parameters of the substrate integration wave-guide of choosing; Secondly; According to above structural parameters; Branch's substrate integration wave-guide 2 is drawn at the symmetry place at the center of main substrate integration wave-guide 1, forms the H-T branch based on substrate integration wave-guide, and adds 3 pairs of H arms of perceptual metal throuth hole at main substrate integration wave-guide centerline offset place and mate; Then, the coupling that 4 realizations of coupling slit and E arm are opened in the metal level center on the H arm; At last, add substrate integrated wave guide structure 5 on the upper strata of H-T branch, structure 5 left ends are sealed by plated-through hole, and in its lower metal layer crack in the corresponding position, and realize in the crack and the close coupling of the H-T of lower floor branched structure, thereby realize the performance of magic T.
Below be execution mode more specifically.
Embodiment one
A kind of substrate integration wave-guide evil spirit T is enough become by levels E-T, H-T branch and matching element, and its structural parameters are following:
Can obtain substrate integration wave-guide evil spirit T through said performing step, the medium substrate material is Duroid (tm) (relative dielectric constant ε
r=2.2, losstangenttan=0.0009).At frequency 30GHz～31.3GHz, four port return losses all are superior to-20dB; Port 2,3 isolations are superior to-25dB, port one, and 4 isolations are superior to-37dB; The amplitude imbalance degree of homophase and anti-phase output is all less than 0.19dB, and phase unbalance degree is all less than 0.5 °.
Embodiment two
A kind of substrate integration wave-guide evil spirit T is enough become by levels E-T, H-T branch and matching element, and its structural parameters are following:
Can obtain substrate integration wave-guide evil spirit T through said performing step, the medium substrate material is Duroid (tm) (relative dielectric constant ε
r=2.2, losstangenttan=0.0009).At frequency 30GHz～31.3GHz, four port return losses all are superior to-15dB; Port 2,3 isolations are superior to-22dB, port one, and 4 isolations are superior to-37dB; The amplitude imbalance degree of homophase and anti-phase output is all less than 0.18dB, and phase unbalance degree is all less than 0.6 °.Its effect is less than execution mode one, and this is because along with the coupling gap length reduces, resonance frequency increases, and makes resonance point toward the high frequency treatment skew.
Embodiment three
A kind of substrate integration wave-guide evil spirit T is enough become by levels E-T, H-T branch and matching element, and its structural parameters are following:
Can obtain substrate integration wave-guide evil spirit T through said performing step, the medium substrate material is Duroid (tm) (relative dielectric constant ε
r=2.2, losstangenttan=0.0009).At frequency 30GHz～31.3GHz, four port return losses all are superior to-13dB; Port 2,3 isolations are superior to-18dB, port one, and 4 isolations are superior to-40dB; The amplitude imbalance degree of homophase and anti-phase output is all less than 0.15dB, and phase unbalance degree is all less than 0.8 °.Its effect is far less than execution mode one, and particularly the reflection of port 4 is bigger, the port poor performance.After the reason that produces this phenomenon was coupling slit position deviation, its cutting surface current weakened, thereby the energy that is coupled out is reduced, and reflection increases.
Claims (5)
1. a substrate integration wave-guide evil spirit T is characterized in that, comprises the two-layer substrate with waveguiding structure up and down that is provided with coupling slot; Wherein, lower floor's substrate is provided with the H-T branch of magic T, and the upper strata substrate is realized E-T branch through coupling slot; Two layers of substrate is parallel overlapping; Waveguide is made up of on-chip through hole, and the widthwise edge of upper strata substrate waveguide is along the widthwise edge edge that is parallel to lower floor's substrate waveguide, and vertical edge of upper strata substrate waveguide is parallel to vertical edge of lower floor's substrate waveguide.
2. substrate integration wave-guide evil spirit T as claimed in claim 1; It is characterized in that the coupling slot position of two layers of substrate is corresponding up and down, an end of coupling slot is provided with perceptual metal throuth hole (3); The coupling slot of upper strata substrate is arranged at down metal covering, and the coupling slot of lower floor's substrate is arranged at metal covering.
3. substrate integration wave-guide evil spirit T as claimed in claim 1; It is characterized in that lower floor's substrate is provided with main waveguide (1) and branch-waveguide (2), form axisymmetric H-T branch; The center line of branch-waveguide (2) is perpendicular to the center line of main waveguide (1), and coupling slot is along the symmetry axis setting of H-T branch.
4. substrate integration wave-guide evil spirit T as claimed in claim 1 is characterized in that structural parameters are:
5. substrate integration wave-guide evil spirit T as claimed in claim 4 is characterized in that also having following structural parameters:
Coupling metal throuth hole biasing: 0.4mm
Coupling slit longitudinal biasing: 0.7mm in the E arm
Coupling slit lateral offset: 1.45mm in the E arm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104114991A CN102544677A (en) | 2010-12-15 | 2011-12-12 | Substrate integrated waveguide magic T |
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| CN201010590071 | 2010-12-15 | ||
| CN201010590071.3 | 2010-12-15 | ||
| CN2011104114991A CN102544677A (en) | 2010-12-15 | 2011-12-12 | Substrate integrated waveguide magic T |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104134844A (en) * | 2014-08-12 | 2014-11-05 | 南京邮电大学 | Planar magic-T based on substrate integration technology |
| CN106159462A (en) * | 2016-06-29 | 2016-11-23 | 电子科技大学 | A kind of compact millimeter wave monopulse antenna |
| CN106229597A (en) * | 2016-07-13 | 2016-12-14 | 西北核技术研究所 | Ultra-compact high-isolation low reflection waveguide magic T |
| CN108376821A (en) * | 2018-01-25 | 2018-08-07 | 电子科技大学 | A kind of Ka wave band substrate integrated waveguides evil spirit T |
| CN108695582A (en) * | 2018-06-20 | 2018-10-23 | 深圳市深大唯同科技有限公司 | A kind of integrated coaxial line broadband cross device of medium |
| CN109088141A (en) * | 2018-08-07 | 2018-12-25 | 中国航空工业集团公司雷华电子技术研究所 | A kind of waveguide magic T structure |
| CN109728390A (en) * | 2018-12-05 | 2019-05-07 | 西安电子科技大学 | A kind of double stacked formula difference microwave band-pass filter |
| RU191096U1 (en) * | 2019-04-22 | 2019-07-23 | Акционерное общество "Научно-исследовательский институт Приборостроения имени В.В. Тихомирова" | DOUBLE WAVE TEE |
| CN113224488A (en) * | 2021-05-13 | 2021-08-06 | 上海航天电子通讯设备研究所 | Wide-stopband substrate integrated waveguide filtering power divider |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2361561A1 (en) * | 1972-12-12 | 1974-06-27 | Thomson Csf | HYBRID BRANCHING |
| DE4205577A1 (en) * | 1992-02-24 | 1993-08-26 | Siemens Ag | Wideband hollow waveguide series-parallel coupling - comprises magic T formed in 2 single parts with sepn. plane along centre of E-arm and each symmetrical side-arm. |
-
2011
- 2011-12-12 CN CN2011104114991A patent/CN102544677A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2361561A1 (en) * | 1972-12-12 | 1974-06-27 | Thomson Csf | HYBRID BRANCHING |
| DE4205577A1 (en) * | 1992-02-24 | 1993-08-26 | Siemens Ag | Wideband hollow waveguide series-parallel coupling - comprises magic T formed in 2 single parts with sepn. plane along centre of E-arm and each symmetrical side-arm. |
Non-Patent Citations (1)
| Title |
|---|
| 冉亮: "基于介质基片结构的微波无源器件的研究", 《中国优秀博硕士学位论文全文数据库（硕士）信息科技辑》 * |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104134844A (en) * | 2014-08-12 | 2014-11-05 | 南京邮电大学 | Planar magic-T based on substrate integration technology |
| CN104134844B (en) * | 2014-08-12 | 2016-03-23 | 南京邮电大学 | A kind of Planar Magic-T based on substrate integrated technology |
| CN106159462A (en) * | 2016-06-29 | 2016-11-23 | 电子科技大学 | A kind of compact millimeter wave monopulse antenna |
| CN106229597B (en) * | 2016-07-13 | 2018-10-26 | 西北核技术研究所 | The low reflection waveguide magic T of ultra-compact high-isolation |
| CN106229597A (en) * | 2016-07-13 | 2016-12-14 | 西北核技术研究所 | Ultra-compact high-isolation low reflection waveguide magic T |
| CN108376821A (en) * | 2018-01-25 | 2018-08-07 | 电子科技大学 | A kind of Ka wave band substrate integrated waveguides evil spirit T |
| CN108376821B (en) * | 2018-01-25 | 2020-10-23 | 电子科技大学 | Ka-band substrate integrated waveguide magic T |
| CN108695582A (en) * | 2018-06-20 | 2018-10-23 | 深圳市深大唯同科技有限公司 | A kind of integrated coaxial line broadband cross device of medium |
| CN108695582B (en) * | 2018-06-20 | 2024-02-06 | 中天宽带技术有限公司 | Dielectric integrated coaxial line broadband cross device |
| CN109088141A (en) * | 2018-08-07 | 2018-12-25 | 中国航空工业集团公司雷华电子技术研究所 | A kind of waveguide magic T structure |
| CN109088141B (en) * | 2018-08-07 | 2021-04-16 | 中国航空工业集团公司雷华电子技术研究所 | Waveguide magic T structure |
| CN109728390A (en) * | 2018-12-05 | 2019-05-07 | 西安电子科技大学 | A kind of double stacked formula difference microwave band-pass filter |
| CN109728390B (en) * | 2018-12-05 | 2020-11-10 | 西安电子科技大学 | Double-layer stacked differential microwave band-pass filter |
| RU191096U1 (en) * | 2019-04-22 | 2019-07-23 | Акционерное общество "Научно-исследовательский институт Приборостроения имени В.В. Тихомирова" | DOUBLE WAVE TEE |
| CN113224488A (en) * | 2021-05-13 | 2021-08-06 | 上海航天电子通讯设备研究所 | Wide-stopband substrate integrated waveguide filtering power divider |
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Application publication date: 20120704 |