CN102543187B - 一种高效读取的串行Flash缓冲器控制电路 - Google Patents
一种高效读取的串行Flash缓冲器控制电路 Download PDFInfo
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- CN102543187B CN102543187B CN201110453419.9A CN201110453419A CN102543187B CN 102543187 B CN102543187 B CN 102543187B CN 201110453419 A CN201110453419 A CN 201110453419A CN 102543187 B CN102543187 B CN 102543187B
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CN102543187A CN102543187A (zh) | 2012-07-04 |
CN102543187B true CN102543187B (zh) | 2015-10-28 |
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CN103914391B (zh) * | 2013-01-07 | 2016-12-28 | 群联电子股份有限公司 | 数据读取方法、存储器控制器与存储器存储装置 |
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CN1517884A (zh) * | 2003-01-09 | 2004-08-04 | 三星电子株式会社 | 控制串行快闪存储器中适当执行的装置和方法及相应芯片 |
CN1797326A (zh) * | 2004-12-21 | 2006-07-05 | 三菱电机株式会社 | 控制电路以及控制方法 |
CN1838091A (zh) * | 2005-09-19 | 2006-09-27 | 威盛电子股份有限公司 | 缓冲高速缓冲存储器要求的处理器与该缓冲存储器及方法 |
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TWM317043U (en) * | 2006-12-27 | 2007-08-11 | Genesys Logic Inc | Cache device of the flash memory address transformation layer |
US7660177B2 (en) * | 2007-12-21 | 2010-02-09 | Silicon Storage Technology, Inc. | Non-volatile memory device having high speed serial interface |
JP5309703B2 (ja) * | 2008-03-07 | 2013-10-09 | 日本電気株式会社 | 共有メモリの制御回路、制御方法及び制御プログラム |
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CN1517884A (zh) * | 2003-01-09 | 2004-08-04 | 三星电子株式会社 | 控制串行快闪存储器中适当执行的装置和方法及相应芯片 |
CN1797326A (zh) * | 2004-12-21 | 2006-07-05 | 三菱电机株式会社 | 控制电路以及控制方法 |
CN1838091A (zh) * | 2005-09-19 | 2006-09-27 | 威盛电子股份有限公司 | 缓冲高速缓冲存储器要求的处理器与该缓冲存储器及方法 |
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Address after: Two road 523808 in Guangdong province Dongguan City Songshan Lake high tech Industrial Development Zone headquarters No. 17 room A410-A411 Applicant after: TECHTOTOP MICROELECTRONICS Co.,Ltd. Address before: Two road 523808 in Guangdong province Dongguan City Songshan Lake high tech Industrial Development Zone headquarters No. 17 room A410-A411 Applicant before: TECHTOTOP MICROELECTRICS Co.,Ltd. DONGGUAN CITY |
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