CN102541753A - Reading and writing optimization method of embedded memory - Google Patents
Reading and writing optimization method of embedded memory Download PDFInfo
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Abstract
The invention relates to a reading and writing optimization method of an embedded memory, which is applicable to an eflash memory. The reading and writing optimization method comprises the following steps of: enabling a plurality of sectors with the same sizes on a logical page to correspond to a plurality of sectors with the same sizes on a physical page, and establishing a mapping relation between effective data on the logical page and the sectors on the physical page. Actually-stored data is found out for reading according to the mapping relation. In the writing operation, the actually-stored data is firstly read, if the data is a FF (Full Figure), the data is directly written; if the data is not the full figure, and the current sector is not positioned in the last sector, the data is written into the next sector, otherwise, all effective data on the current logical page is read into an SRAM (Static Random Access Memory), the corresponding physical page is erased, and values in the SRAM are written into the first sector on the erased physical page after being updated into latest values; and after the operation is finished, a mapping table is updated. The optimization method has the beneficial effects that the reading and writing operation of the eflash memory is simplified, the performance of a file system can be effectively improved, and the complexity of the system is simultaneously reduced.
Description
Technical field
The present invention relates to the method for a kind of embedded Norflash memory read/write of optimization (hereinafter to be referred as eflash), be particularly useful on eflash, setting up the embedded software system of file system.
Background technology
Semiconductor memory can be divided into two types of volatile storage and non-volatility memorizers, and the data that can lose the memory of after the volatile storage power down are even non-volatility memorizer also can protected data under the situation of cutting off the electricity supply.ROM is a non-volatility memorizer, and whether ROM can write data according to the user on type is divided into two types, and one type is the ROM that the user can write, another kind of be manufacturer in process, write be called as Mask ROM.In the ROM that the user can write, relatively commonly used have EEPROM (Electrically Erasable Programmable ROM, EEPROM) and an eflash (Embedded Flash Memory, embedded flash memory).
Eflash is that EEPROM moves to maturity, and semiconductor technology evolves is to submicron technology, and the product of high capacity electrically-erasable storage requirement.The principle of its storage data is that stores with electric charge is on floating gate electrode.Compare with EEPROM, Flash has unrivaled superiority aspect integrated level; Its cellar area is merely 1/4th of conventional EEPROM.EEPROM has gradually by the substituted trend of eflash because cost is high, demand is little, integrated level is low.
Shortcoming after but eflash has in application: on the one hand, eflash can not read and write by word; On the other hand, eflash can only carry out erase operation with page or leaf unit, and one page is very big usually, has to the 4K byte from 256 bytes according to different eflash models.In addition, before eflash is carried out write operation, must carry out erase operation earlier, and the needed time of erase operation is very long, generally can reach the microsecond level.This can bring very big inconvenience in application, increased the complicacy that file system realizes, and reduced system performance.
Summary of the invention
The objective of the invention is to solve the technological difficulties that to the eflash memory read/write time, run in the present application; A kind of more high-performance and the read-write optimization method of eflash storer more easily are provided; Making can be simple as operating SRAM (SRAM) to the read-write of eflash storer; Improve the performance of file system, reduce the complexity of system simultaneously.
Technical scheme of the present invention provides a kind of read-write optimization method of in-line memory, and said in-line memory is eflash; Said optimization method comprises:
Several Physical Page are set in the primary memory space of eflash, each Physical Page is divided into several onesize sectors; Several logical page (LPAGE)s also are set in the Virtual Space, make the size of a logical page (LPAGE) equal the size of a sector;
And; Defined a logical page (LPAGE) corresponding with a Physical Page; And the valid data on this logical page (LPAGE) are mapped to the mapping relations on several sectors in its pairing Physical Page; That is: make logical page address equal physical page address, and the offset address of valid data equal the offset address of each sector on this Physical Page on the logical page (LPAGE);
Therefore according to said mapping relations, can confirm the concrete sector number of valid data on pairing Physical Page on the logical page (LPAGE), and then eflash carried out the operation that logic is read or logic is write according to this sector number.
Said optimization method, that carries out when specifically being included in initialization builds table handling,, in a SRAM, sets up the mapping relations table that is, confirm with logical page (LPAGE) on the pairing sector number of valid data;
Build in the table handling said, the offset address according to valid data on the logical page (LPAGE) scans to first sector from last sector of corresponding Physical Page successively, obtains the data on the same offset address of each sector:
If the data that obtain from one of them sector are not full FF, then this sector number is the mapping sector number of valid data on the logical page (LPAGE), in the mapping relations table, is the pairing sector of valid data on the logical page (LPAGE) with this sector record;
If data all are full FF on this offset address of all sectors, the mapping sector of then setting these valid data on the said logical page (LPAGE) number is 0, is the pairing sector of valid data on the logical page (LPAGE) with first sector record of this Physical Page.
Said mapping relations table is a two-dimensional array Lut [m] [n] who in said SRAM, sets up, and wherein m represents the logical page number (LPN) of each logical page (LPAGE) among the eflash; N represents the logical number of valid data in a logical page (LPAGE); Said logical number is corresponding with the side-play amount of data in logical page (LPAGE) and respective sectors, and the minimum read-write unit of said side-play amount and said eflash is complementary;
The value of said two-dimensional array is represented with s, represents the pairing sector number of valid data.
Said optimization method is when carrying out the logic read operation; The logical address that provides according to application program; Calculate the logic number of pages at valid data place, and the side-play amount in this logical page (LPAGE), through inquiring about the sector number that said mapping relations table obtains concrete mapping on the respective physical page or leaf; Again according to said side-play amount, calculate on the sector of being shone upon and this logical address physical address corresponding; Afterwards, read data on the said physical address.
Said optimization method reads the value of data on the logical address that application program provides earlier when carrying out logical write operation:
If the value of reading is full FF, then will newly be worth this physical address of directly writing current mapping sector;
If the value of reading is not full FF, and current mapping sector is not last sector of said eflash, then new data write in the next sector of current sector, and upgraded the mapping relations table;
If the value of reading is not full FF; And last sector that current mapping sector is said eflash; Then all read valid data all on the current logical page (LPAGE) among the SRAM; Wipe the corresponding physical page or leaf, and write in first sector of wiping Physical Page after the value among the SRAM is updated to up-to-date value, and upgrade the mapping relations table.
In addition; Said optimization method is when carrying out logical write operation, complete if to write the new value of logical page (LPAGE) be FF, then no matter which sector what shone upon is; All to valid data all in the current logical page (LPAGE) be read among the SRAM; Wipe the corresponding physical page or leaf, and write in first sector of wiping Physical Page after the value among the SRAM is updated to up-to-date value, and upgrade the mapping relations table.
The read-write optimization method of in-line memory according to the invention; Its advantage is; Through setting up the mapping relations between logical page (LPAGE) data and the number of physical pages certificate, make that the read-write operation of eflash storer is simply efficient, especially when writing data, can the branch situation handle; Needn't all carry out the erase operation of whole page or leaf in all cases, solve the technical matters in the conventional use.Therefore, the present invention can improve the performance of file system, reduces the complexity of system simultaneously.
Description of drawings
Fig. 1 is a process flow diagram of building table handling in the read-write optimization method of in-line memory according to the invention;
Fig. 2 is the process flow diagram of logical write operation in the read-write optimization method of in-line memory according to the invention.
Embodiment
The present invention is a kind of read-write optimization method that is applicable to embedded Norflash storer (hereinafter to be referred as eflash); At first each Physical Page with eflash is divided into several onesize physical sectors, is convenient to counting usually and can be divided into 4 or 8 physical sectors.Make the corresponding logical page (LPAGE) of a Physical Page; Simultaneously, make corresponding several the onesize physical sectors of a logical page (LPAGE), promptly; Data on the same logical page (LPAGE) can be distributed in above the different sectors of same Physical Page, and the size of a logical page (LPAGE) equals the size of a physical sector.
What application program was specifically visited is the data on the logical page (LPAGE), and the data on the logical page (LPAGE) need just can correspond to the data on the real Physical Page through specific mapping relations.For this reason, define a kind of mapping relations efficiently among the present invention, that is, made logical page address equal physical page address, and needed the offset address of data on the logical page (LPAGE) of visit to equal the offset address of physical sector on this Physical Page; Therefore, for from the logical page (LPAGE) data map to the number of physical pages certificate, only need find corresponding sector number, for example certain sector number in 4 or 8 physical sectors.
Generally in use, during initialization, can in a SRAM, set up the mapping relations table in advance, confirm data on the logical page (LPAGE) the sector number on the corresponding Physical Page.Normally scan from high to low and be in the data on the same offset address on each sector of corresponding Physical Page: if find that data are not full FF, then this sector number is the mapping sector number of these data on the logical page (LPAGE); If find that data all are full FF on this offset addresss of all sectors, the mapping sector of then setting these data on the logical page (LPAGE) number is 0 (promptly these data are corresponding with first sector).
When read operation, only need to find physically actual data to read and get final product through above-mentioned mapping relations.
When write operation, at first find physically actual data, if full FF then can write direct through above-mentioned mapping relations; And if not full FF and current sector sector in the end not; Then data are write in the current next sector of finding the sector; Otherwise; Should all valid data of current logical page (LPAGE) all be read among the SRAM in this case, wipe corresponding Physical Page, and write in first sector of wiping Physical Page after the value among the SRAM is updated to up-to-date value; After more than operation is accomplished, upgrade mapping table.
Explain content of the present invention for ease; With a concrete eflash is example; Set forth the read-write optimization method of eflash storer, in the present embodiment with last 32 pages of eflash, the physical space of totally 128 byte-sized is modeled to the EEPROM of 32K byte-sized, promptly; Each sector-size of said eflash is the 1K byte, and the least unit of read-write is 16 bits.Application program only need provide logical address through the function interface of appointment, just can carry out read-write operation to eflash as operating SRAM, need not problems such as care is wiped, page size.
Concrete grammar is, last 32 pages of eflash are designated as logical page number (LPN) page0 from small to large successively to page31, and a Physical Page with eflash is divided into 4 sectors again, label from 0 to 3.And making the valid data of depositing in the logical page (LPAGE) is the size (being the 1K byte) of a sector.Because eflash is 16, so being least unit with the half-word, manages the storage inside management logic, promptly the valid data in each logical page (LPAGE) have 512 half-words, logical number from 0 to 511.
The logical number of valid data on the logical page (LPAGE); Corresponding with the side-play amount of corresponding half-word in the sector; But it is uncertain that these data specifically leave which sector corresponding with logical page (LPAGE) in, and this just need set up a mapping table in SRAM, writes down this half-word and is in which sector.In SRAM, set up a two-dimensional array Lut [m] [n], m represents logical page number (LPN) in the array, size from 0 to 31, and n represents the logical number of valid data in one page, size from 0 to 511; The value of array is represented with s, corresponding sector number 0 ~ 3.The process that the present invention will set up said two-dimensional array Lut [m] [n] is called builds table handling.
Referring to the process flow diagram when setting up mapping table shown in Figure 1, begin to build table from logical number n=0 of logical page (LPAGE) m=0, valid data.Be positioned at which sector in order to search valid data, should begin successively to search from the highest sector to minimum sector, (being sector 3 this example) searches to first sector (being sector 0) successively just from last sector.Be not equal to 0xffff if find the value at respective offsets amount place, wherein some sectors, then this sector is the sector at valid data place.If find sector 0 always, the value at respective offsets amount place still is 0xffff, then makes Lut [m] [n]=0, and the mapping sector of promptly setting these data on the logical page (LPAGE) number is 0.
For example when setting up Lut [1] [0]; Begin to search from 0 skew (n=0) of last sector (being s=3) of logical page (LPAGE) m=1; Equal 0xffff if find the value of 0 skew place of this sector 3,0 skew place that forwards sector 2 again to begins to search, and the like.And the 0 skew place duration that for example ought find sector 1 has been not equal to 0xffff, and then the logical number of logical page (LPAGE) m=1 is 0 skew place that the data of n=0 are located in sector 1.And if the value that 00 skew place checks in up to the sector still is then to make Lut [1] [0]=0 by 0xffff.
The present invention need be transformed into the logical address that provides the physical address of concrete storage data when reading eflash.Among the present invention this operation being called logic reads.Wherein, logical address is meant the virtual address of the EEPRM that simulates, address realm from 0 to 32K; Calculate the value of logic number of pages m according to the logical address that provides; Value with data side-play amount n in this logical page (LPAGE); Obtain the number value s that valid data belong to the sector through the query mappings table, in this sector, carry out data again and read with said side-play amount physical address corresponding.
Referring to process flow diagram shown in Figure 2, the present invention according to the logical address that provides, reads the data on this logical address earlier when writing eflash, divides four kinds of situation operations again.Among the present invention this operation being called logic writes.
First kind of situation; The value of reading (being labeled as Dirty-Data among Fig. 2) is 0xffff; Directly will newly be worth (being labeled as NewData among Fig. 2) and write the origin-location in the current mapping sector; That is, be written in the mapping sector by this logical address calculate physical address, need not change the value of mapping table.
Second kind of situation, the value of reading are not 0xffff, and current mapping sector is not last sector of Physical Page, then will newly be worth in the next sector of writing current sector, and in mapping table, mapping relations are updated to next sector.
The third situation, the value of reading are not 0xffff, and current mapping sector last sector that is Physical Page.Should all read valid data all in the current logical page (LPAGE) among the SRAM in this case; Wipe the pairing Physical Page of this logical page (LPAGE); Again with the locational old value of respective offsets among the new value replacement SRAM; Write all valid data after upgrading among the SRAM in first sector (being sector 0) of corresponding Physical Page at last, and upgrade mapping table.
The 4th kind of situation; If the new value that writes is 0xffff,, all to valid data all in the current logical page (LPAGE) be read among the SRAM no matter which sector the mapping of current valid data is; Wipe the pairing Physical Page of this logical page (LPAGE); With the locational old value of respective offsets among the new value replacement SRAM, write all valid data after upgrading among the SRAM in first sector of corresponding Physical Page again, and upgrade mapping table simultaneously.
In sum; The read-write optimization method of in-line memory according to the invention; Through setting up the mapping relations between logical page (LPAGE) data and the number of physical pages certificate, make that the read-write operation of eflash storer is simply efficient, especially when writing data, can the branch situation handle; Needn't all carry out the erase operation of whole page or leaf in all cases, solve the technical matters in the conventional use.Therefore, the present invention can improve the performance of file system, reduces the complexity of system simultaneously.
Although content of the present invention has been done detailed introduction through above-mentioned preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be conspicuous.Therefore, protection scope of the present invention should be limited appended claim.
Claims (6)
1. the read-write optimization method of an in-line memory, said in-line memory is eflash, it is characterized in that, said optimization method comprises:
Several Physical Page are set in the primary memory space of eflash, each Physical Page is divided into several onesize sectors; Several logical page (LPAGE)s also are set in the Virtual Space, make the size of a logical page (LPAGE) equal the size of a sector;
And; Defined a logical page (LPAGE) corresponding with a Physical Page; And the valid data on this logical page (LPAGE) are mapped to the mapping relations on several sectors in its pairing Physical Page; That is: make logical page address equal physical page address, and the offset address of valid data equal the offset address of each sector on this Physical Page on the logical page (LPAGE);
Therefore according to said mapping relations, can confirm the concrete sector number of valid data on pairing Physical Page on the logical page (LPAGE), and then eflash carried out the operation that logic is read or logic is write according to this sector number.
2. the read-write optimization method of in-line memory as claimed in claim 1 is characterized in that,
Said optimization method, that carries out when specifically being included in initialization builds table handling,, in a SRAM, sets up the mapping relations table that is, confirm with logical page (LPAGE) on the pairing sector number of valid data;
Build in the table handling said, the offset address according to valid data on the logical page (LPAGE) scans to first sector from last sector of corresponding Physical Page successively, obtains the data on the same offset address of each sector:
If the data that obtain from one of them sector are not full FF, then this sector number is the mapping sector number of valid data on the logical page (LPAGE), in the mapping relations table, is the pairing sector of valid data on the logical page (LPAGE) with this sector record;
If data all are full FF on this offset address of all sectors, the mapping sector of then setting these valid data on the said logical page (LPAGE) number is 0, is the pairing sector of valid data on the logical page (LPAGE) with first sector record of this Physical Page.
3. the read-write optimization method of in-line memory as claimed in claim 2 is characterized in that,
Said mapping relations table is a two-dimensional array Lut [m] [n] who in said SRAM, sets up, and wherein m represents the logical page number (LPN) of each logical page (LPAGE) among the eflash; N represents the logical number of valid data in a logical page (LPAGE); Said logical number is corresponding with the side-play amount of data in logical page (LPAGE) and respective sectors, and the minimum read-write unit of said side-play amount and said eflash is complementary;
The value of said two-dimensional array is represented with s, represents the pairing sector number of valid data.
4. the read-write optimization method of in-line memory as claimed in claim 3 is characterized in that,
Said optimization method is when carrying out the logic read operation; The logical address that provides according to application program; Calculate the logic number of pages at valid data place, and the side-play amount in this logical page (LPAGE), through inquiring about the sector number that said mapping relations table obtains concrete mapping on the respective physical page or leaf; Again according to said side-play amount, calculate on the sector of being shone upon and this logical address physical address corresponding; Afterwards, read data on the said physical address.
5. the read-write optimization method of in-line memory as claimed in claim 4 is characterized in that,
Said optimization method reads the value of data on the logical address that application program provides earlier when carrying out logical write operation:
If the value of reading is full FF, then will newly be worth this physical address of directly writing current mapping sector;
If the value of reading is not full FF, and current mapping sector is not last sector of said eflash, then new data write in the next sector of current sector, and upgraded the mapping relations table;
If the value of reading is not full FF; And last sector that current mapping sector is said eflash; Then all read valid data all on the current logical page (LPAGE) among the SRAM; Wipe the corresponding physical page or leaf, and write in first sector of wiping Physical Page after the value among the SRAM is updated to up-to-date value, and upgrade the mapping relations table.
6. the read-write optimization method of in-line memory as claimed in claim 5 is characterized in that,
Said optimization method is when carrying out logical write operation; If write the new value of logical page (LPAGE) is full FF; Be which sector then, all will valid data all in the current logical page (LPAGE) be read among the SRAM, wipe the corresponding physical page or leaf regardless of what shine upon; And write in first sector of wiping Physical Page after the value among the SRAM is updated to up-to-date value, and upgrade the mapping relations table.
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