CN102540748A - Projection type slope exposure photoetching machine and method - Google Patents
Projection type slope exposure photoetching machine and method Download PDFInfo
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- CN102540748A CN102540748A CN2010106063171A CN201010606317A CN102540748A CN 102540748 A CN102540748 A CN 102540748A CN 2010106063171 A CN2010106063171 A CN 2010106063171A CN 201010606317 A CN201010606317 A CN 201010606317A CN 102540748 A CN102540748 A CN 102540748A
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Abstract
A projection type slope exposure photoetching machine sequentially comprises a lighting system with a slit for limiting a filed of view, a mask, an inclined optical mirror group, an objective lens and a base, wherein a mark pattern on the mask forms a slope space image above the base through the inclined optical mirror group and the objective lens, and the slope space image is utilized to carry out slope exposure on the base.
Description
Technical field
The present invention relates to field of lithography, relate in particular to projection slope exposure photo-etching machine and method.
Background technology
Three types of main flow technologies of microelectromechanical systems (MEMS:Micro-electro-mechanical-system) are: surface silicon processing technology, body silicon process technology, be the three-dimensional non-silicon materials processing technology of representative with LIGA.The first, " LIGA " is German words Lithographie, Galvanoformung, and the abbreviation of Abformung, it comprises synchrotron radiation photoetching, little electroforming, little three processes of casting of moulding.The LIGA technology is at first to be proposed by German Karlsruhe nuclear research center the beginning of the eighties and grow up.Be characterized in that microstructure can accomplish very big vertical degree of depth, high-aspect-ratio, and also precision is high, and the depth of parallelism is good.But the practical efficiency of x-ray source is low; Speed when injection moulding is duplicated receives very big influence; Cause production efficiency low, and its equipment is huge and expensive, the mask that is used for photoetching prepare suitable difficulty and also fabrication cycle long; Cause the exploitation of new product in industrialized production, to receive very big restriction through a quite very long process.The second, the body silicon process technology is a kind of typical micro-machining.In order to form complete microstructure, often on the basis of processing, also use bonding or bonding technology.The bonding techniques and the bulk-silicon processing method of silicon are combined, and are to utilize bulk silicon technological to realize a big characteristic of microstructure.It makes mobilizable position strengthen, and performances such as MEMS device resolution and sensitivity are improved.But body silicon process technology process is more complicated than silicon face processing, and volume is big and cost is high.The 3rd, the surface working means that the surface silicon process using is similar with integrated circuit technology are made physical construction with monocrystalline silicon or polysilicon membrane.The process that adopts comprises extension, it is assorted to ooze, sputter, chemical vapor deposition, photoetching, oxidation etc.This method shortcoming is that spatial structure is not so good as preceding two kinds strong.But advantage is to continue to use many IC technologies, technical maturity, and productive rate is expensive low.Therefore the surface silicon technology is the technology of easy industrialized.
When adopting surface silicon technology, typical one program is photoetching.In order to process the spatial structure of various complicacies, photoetching has proposed more requirement to traditional I C on the technology, comprises big depth of focus, inclined-plane exposure, slope exposure or the like.The device of the convenient processing of big depth of focus high-aspect-ratio, the inclined-plane exposure can be processed the spatial structure of inclination, and the slope exposure then can be processed device, save area on the slope.For the inclined-plane exposure, adopt contact or the proximity printing of traditional M ask Aligner to get final product, only need inclination mask and substrate, or the dip-parallel illumination light can realize (as disclosed among the U.S. Pat 2007/0003839A1) (as shown in Figure 1).For big depth of focus, can in projection mask aligner, reduce object lens NA and increase the CD realization.But,, adopt laser on the gradient, to process traditionally for slope exposure (slope that the present invention relates to exposure as shown in Figure 3); Precision is not high; Perhaps adopt X ray, electron beam or ion beam etching (like " laser ablation The Application of Technology ", the Wang Hong outstanding person of Nankai University etc., infrared and laser engineering; In October, 2004,33 the 5th phases of volume; " electron beam exposure micro-nano process technology ", publishing house: Beijing worker is big, ISBN:9787563913008, publication date: 2004-07-01; And " Focused Ion Beam fabricationof large and complex nanopatterns ", O.Wilhelmi, L.Roussel; P.Anzalone, D.J.Stokes, P.Faber; S.Reyntjens, FEI Company, PO Box 80066; 5600 KA Eindhoven, The Netherlands; Deng), or the LIGA method, cost is high, and productive rate is very low, has a strong impact on industrialization.Because gradient height is usually up to the hundreds of micron, the diffraction effect of Mask Aligner is difficult to eliminate, so be difficult to realize with proximity printing; And for traditional projection aligner; Because the gradient big (～0.01rad-1rad); The work stage mask platform is difficult to tilt so big angle, thus also be difficult to realize, in addition; Have the patent of US6866976B2 to adopt the method that changes dose distribution and mask indicia distribution to realize slope exposure (as shown in Figure 2), this method operation is difficulty very.
Shortcoming to the conventional lithography machine is difficult to realize the slope exposure the present invention proposes a kind of follow-on projection aligner, not only can carry out traditional plane exposure; Can also realize the slope exposure; Thereby utilize the slope to do a part of structure, practice thrift area of base, make that the MEMS device volume is littler.
Summary of the invention
To the above-mentioned shortcoming of conventional lithography machine, the present invention proposes a kind of projection slope exposure photo-etching machine, comprise successively along optical propagation direction:
Illuminator is in order to outgoing one light beam;
Mask is formed with indicia patterns on this mask, and the indicia patterns on this mask of this light beam irradiates produces the emergent light that includes this indicia patterns information;
Inclination optical frames group;
Object lens; And
Substrate, this substrate has the slope;
Wherein, this emergent light forms the slope aerial image through this inclination optical frames group, these object lens above this substrate slope, and utilizes this slope aerial image to be made public in this substrate slope.
Wherein, inclination optical frames group is a wedge of glass.
Wherein, inclination optical frames group is lens or lens combination.
Wherein, the indicia patterns of this mask is through this inclination optics arrangement of mirrors sloping aerial image, and the horizontal component of this slope aerial image or vertical component exist skew, convergent-divergent.
Wherein, also comprise the mask platform that is used to carry this mask.
Wherein, also comprise the work stage that is used to carry this substrate.
Comprise also that wherein the work stage that is used for that places on this work stage aims at measured sensor.
Wherein, this illuminator comprises the slit that is used to limit the visual field size.
Wherein, the enlargement ratio of these object lens is 1 times.
The invention allows for a kind of projection slope exposure photo-etching machine, comprise successively along optical propagation direction:
Illuminator is in order to outgoing one light beam;
Mask is formed with indicia patterns on this mask, and the indicia patterns on this mask of this light beam irradiates produces the emergent light that includes this indicia patterns information;
Object lens;
Inclination optical frames group; And
Substrate, this substrate has the slope;
Wherein, this emergent light forms the slope aerial image through these object lens, this inclination optical frames group above this substrate slope, and utilizes this slope aerial image to be made public in this substrate slope.
Wherein, the indicia patterns of this mask is through this inclination optics arrangement of mirrors sloping aerial image above this substrate surface, and the horizontal component of this slope aerial image or vertical component exist skew, convergent-divergent.
Wherein, inclination optical frames group is a wedge of glass.
Wherein, inclination optical frames group is lens or lens combination.
Wherein, also comprise the mask platform that is used to carry this mask.
Wherein, also comprise the work stage that is used to carry this substrate.
Wherein, comprise that also the work stage that is used for that places on this work stage aims at measured sensor.
Wherein, this illuminator comprises the slit that is used to limit the visual field size.
Wherein, the enlargement ratio of these object lens is 1 times.
Utilize above-mentioned litho machine to carry out the method for slope exposure, comprise the steps:
(1) according to position, scope, height and the angle of inclination on the slope of needs exposure in the substrate, the geomery and the installation site of calculating the inclination optical frames group of required increase, and mask compensation rate;
(2), make the mask with indicia patterns and the inclination optical frames group that are used for the slope exposure according to result of calculation;
(3) in projection aligner, inclination optical frames group is installed under the mask face or on the basal surface, and uploads the mask that this is used for the slope exposure;
(4) adjustment illumination slit makes illumination field of view position and size variation, the indicia patterns of this mask that throws light on;
(5) adopt work stage to aim at survey sensor, measure the three-dimensional position of the slope aerial image of this indicia patterns;
(6) calculate the distance between each group echo pattern in this slope aerial image gradient and this slope aerial image according to measurement result; Adjust inclination optical frames group then; And measurement space image position again, it is best that the distance between this gradient and each group echo pattern reaches;
(7) after this substrate was aimed at, adjustment needed this substrate slope of slope exposure to measured aerial image position, slope, is made public in this substrate slope;
(8) this substrate is down developed, and does subsequent technique and handle.
Series of advantages such as compare write-through methods such as traditional laser, X ray, electron beam, ion beam, device of the present invention and corresponding method have the productive rate height, and cost is low.
Description of drawings
Fig. 1-2 is the synoptic diagram of the slope exposure of prior art;
Shown in Figure 3 is the slope exposure synoptic diagram of solution required for the present invention;
Shown in Figure 4 is the structural representation of the litho machine of first embodiment of the invention;
Shown in Figure 5 is each plane refraction imaging schematic diagram of wedge of glass;
The imaging synoptic diagram of the wedge of glass of using for the present invention shown in Figure 6;
Shown in Figure 7 is the structural representation of litho machine second embodiment of the invention;
Shown in Figure 8 for utilizing device of the present invention to carry out the process flow diagram of slope exposure.
Embodiment
Below, describe in detail according to a preferred embodiment of the invention in conjunction with accompanying drawing.For the ease of describing and the outstanding the present invention of demonstration, omitted existing associated components in the prior art in the accompanying drawing, and will omit description these well-known components.
The present invention increases additional optical mirror group behind mask or before the substrate, make the mask picture of basal surface produce, and Fig. 4 and Fig. 7 are the preferred embodiments according to projection of the present invention slope exposure photo-etching machine.What it should be noted that indication of the present invention similarly is that diffraction light or its reverse extending congruence are gathered the real image or the virtual image that are become, down with.In following examples, it is that example is set forth that silicon chip is adopted in used substrate, and this silicon chip has the slope.
First embodiment
Shown in Figure 4 is structural representation according to the projection slope exposure photo-etching machine of the first embodiment of the present invention; This device comprise successively have light source 1, front lit mirror group 2, the slit 3 that is used to limit the visual field size, the illuminator of back lighting mirror group 4, mask 6, mask platform 7; Inclination optical frames group 8 (is wedge of glass in the present embodiment; Its exemplary is a prism), object lens 9, work stage 13 is aimed at survey sensor 10 with work stage.
The schematic diagram that becomes the virtual image for the light that sees through mask through two surfaces of wedge of glass respectively shown in Figure 5.Like Fig. 5 (a), when light path got into optically denser medium glass from the optically thinner medium air, mask pattern (Object) can be decomposed into the thing of parallel dielectric surface and the thing dioptric imaging respectively on perpendicular media surface, and vertical then picture and level picture can be formed actual mask picture.From Fig. 5 (a), can find out that level is far away than object distance as image distance, but do not have convergent-divergent and tilt phenomenon, and vertical picture not only image distance is far away than object distance, and become intensified image and inclination picture, therefore, the actual mask picture also be that the image distance intensified image far away than object distance looks like with inclination.In like manner; Like Fig. 5 (b); When light path got into the optically thinner medium air from optically denser medium glass, mask pattern (Object) can be decomposed into the thing of parallel dielectric surface and the thing dioptric imaging respectively on perpendicular media surface, and vertical then picture and level picture can be formed actual mask picture.From Fig. 5 (b), can find out that level is nearer than object distance as image distance, but do not have convergent-divergent and tilt phenomenon, and vertical picture not only image distance is nearer than object distance, and become reduced image and inclination picture, therefore, the actual mask picture also be that the image distance reduced image nearer than object distance looks like with inclination.
Shown in Figure 6 for the mask diffraction light passes through the schematic diagram that two surfaces of wedge of glass become the virtual image simultaneously, this figure is the synthetic result of Fig. 5 (a) and two surface refraction of Fig. 5 (b).As shown in Figure 6, mask mark (0bject) becomes to amplify and tilts as Image1 (because the mask face is approximate parallel with upper surface in this example through wedge of glass upper surface (Surface1); So Image1 is similar to nonangular picture), Image1 passes through wedge of glass lower surface (Surface2) again, becomes to dwindle inclination as Image2. therefore; Image2 is the picture of mask mark through wedge of glass; This picture has produced certain inclination, convergent-divergent, level and vertical skew with respect to the mask face, confirms the angle of wedge of glass upper and lower surfaces in the time of design, and this angle is usually in 5-60 degree scope; Those skilled in the art can select according to actual needs; Choose 15 degree in the present embodiment, and suitably adjust the setting angle of wedge of glass, can be so that the requirement of slope exposure be satisfied at the angle of inclination; And if minimum-----convergent-divergent of convergent-divergent can not reach requirement; Adjustment this error of compensated distance that is used for slope exposed mask mark that designs then, if or the adjustable multiple rate of object lens, can adjust this error of object lens multiplying power correction.
Like Fig. 4; Mask pattern becomes the picture 5 of inclination, level and vertical skew, convergent-divergent through wedge of glass; Pass through object lens (1 times of object lens) again, near the silicon chip plane, also become the picture 12 of inclination, level and vertical skew, convergent-divergent, wherein convergent-divergent reaches minimum through appropriate designs and compensation; The angle of inclination reaches the requirement of slope exposure, and level and vertical skew are through calculating initial value and obtaining exact value through mask registration or exposure correction.Adopt this aerial image to carry out the slope exposure to silicon chip.
Second embodiment
Shown in Figure 7 is structural representation according to the projection slope exposure photo-etching machine of the first embodiment of the present invention; This device comprise successively have light source 21, front lit mirror group 22, the slit 23 that is used to limit the visual field size, the illuminator of back lighting mirror group 24; Mask 26, mask platform 27, object lens 29; Inclination optical frames group (being wedge of glass in the present embodiment) 28, work stage 213 is aimed at survey sensor 210 with work stage.Wedge of glass glass in the present embodiment is between work stage and object lens.According to the light path principle of reversibility; Light path between mask face and silicon chip face is reversible; Therefore, with embodiment illustrated in fig. 4 similar, this device can make the mask pattern diffracted ray become not have the picture of inclination, anhydrous gentle vertical skew, no convergent-divergent through object lens (1 times of object lens); Pass through wedge of glass again, near silicon plane 211, also become the picture 212 of inclination, translation, level and vertical skew, convergent-divergent.Its convergent-divergent reaches minimum through appropriate designs and mask compensation, and the angle of inclination reaches the requirement of slope exposure, and level and vertical skew are through calculating initial value and obtaining exact value through the mask registration exposure correction.Adopt this aerial image to carry out the slope exposure to silicon chip.
Shown in Figure 8 is the method for application of Fig. 4 and two devices of Fig. 7, and concrete steps are following:
Position, scope, height and the angle of inclination on the slope of making public as required, the geomery and the installation site of calculating the inclination optical frames group of required increase, and the mask compensation rate etc.
According to result of calculation, mask with indicia patterns and the inclination optical frames group that is exclusively used in the slope exposure customized.
In projection aligner, inclination optical frames group is installed under the mask face or on the silicon chip face, and uploads the mask that is exclusively used in the slope exposure.
Adjustment illumination slit makes illumination field of view position and size variation, throws light in the indicia patterns of this mask.
Adopt work stage to aim at survey sensor, measure the three-dimensional position of the slope aerial image of this indicia patterns.
As the distance between each group echo pattern in the gradient and the aerial image, suitably adjust inclination optical frames group according to the measurement result computer memory then, and measurement space image position again, it is best that the distance between the gradient and each group echo pattern reaches.
After silicon chip was aimed at, adjustment needed the area of silicon wafer of slope exposure to measured aerial image position, slope, is made public in the slope.
Lower silicon slice develops, and does subsequent technique and handle.
Although the present invention has only provided the embodiment of wedge of glass as inclination optical frames group, comprise that other special processing of concave-convex lens or lens combination or the optical device that combination is used for tilting the mask picture also can be used as the present invention's inclination optical frames group.
Described in this instructions is several kinds of preferred embodiment of the present invention, and above embodiment is only in order to explain technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within scope of the present invention under this invention's idea through the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (19)
1. projection slope exposure photo-etching machine comprises along optical propagation direction successively:
Illuminator is in order to outgoing one light beam;
Mask is formed with indicia patterns on this mask, and the indicia patterns on this mask of this light beam irradiates produces the emergent light that includes this indicia patterns information;
Inclination optical frames group;
Object lens; And
Substrate, this substrate has the slope;
Wherein, this emergent light forms the slope aerial image above this inclination optical frames group, the slope of these object lens in this substrate, and utilizes this slope aerial image to be made public in the slope of this substrate.
2. litho machine according to claim 1, wherein, inclination optical frames group is a wedge of glass.
3. litho machine according to claim 1, wherein, inclination optical frames group is lens or lens combination.
4. litho machine according to claim 1, wherein, the indicia patterns of this mask is through this inclination optics arrangement of mirrors sloping aerial image, and the horizontal component of this slope aerial image or vertical component exist skew, convergent-divergent.
5. litho machine according to claim 1 also comprises the mask platform that is used to carry this mask.
6. litho machine according to claim 1 also comprises the work stage that is used to carry this substrate.
7. litho machine according to claim 6 comprises that also the work stage that is used for that places on this work stage aims at measured sensor.
8. litho machine according to claim 1, wherein, this illuminator comprises the slit that is used to limit the visual field size.
9. according to litho machine any among the claim 1-8, wherein, the enlargement ratio of these object lens is 1 times.
10. projection slope exposure photo-etching machine comprises along optical propagation direction successively:
Illuminator is in order to outgoing one light beam;
Mask is formed with indicia patterns on this mask, and the indicia patterns on this mask of this light beam irradiates produces the emergent light that includes this indicia patterns information;
Object lens;
Inclination optical frames group; And
Substrate, this substrate has the slope;
Wherein, this emergent light forms the slope aerial image through these object lens, this inclination optical frames group above this substrate slope, and utilizes this slope aerial image to be made public in this substrate slope.
11. litho machine according to claim 1, wherein, the indicia patterns of this mask is through this inclination optics arrangement of mirrors sloping aerial image above this substrate surface, and the horizontal component of this slope aerial image or vertical component exist skew, convergent-divergent.
12. according to the litho machine of claim 10, wherein, inclination optical frames group is a wedge of glass.
13. according to the litho machine of claim 10, wherein, inclination optical frames group is lens or lens combination.
14. litho machine according to claim 10 also comprises the mask platform that is used to carry this mask.
15. litho machine according to claim 10 also comprises the work stage that is used to carry this substrate.
16. litho machine according to claim 15 comprises that also the work stage that is used for that places on this work stage aims at measured sensor.
17. litho machine according to claim 10, wherein, this illuminator comprises the slit that is used to limit the visual field size.
18. according to litho machine any among the claim 10-17, wherein, the enlargement ratio of these object lens is 1 times.
19. utilize the described litho machine of claim 1-18 to carry out the method for slope exposure, comprise the steps:
(1) according to position, scope, height and the angle of inclination on the slope of needs exposure in the substrate, the geomery and the installation site of calculating the inclination optical frames group of required increase, and mask compensation rate;
(2), make the mask with indicia patterns and the inclination optical frames group that are used for the slope exposure according to result of calculation;
(3) in projection aligner, inclination optical frames group is installed under the mask face or on the basal surface, and uploads the mask that this is used for the slope exposure;
(4) adjustment illumination slit makes illumination field of view position and size variation, the indicia patterns of this mask that throws light on;
(5) adopt work stage to aim at survey sensor, measure the three-dimensional position of the slope aerial image of this indicia patterns;
(6) calculate the distance between each group echo pattern in this slope aerial image gradient and the slope aerial image according to measurement result, adjust inclination optical frames group then, and measurement space image position again, it is best that the distance between this gradient and each group echo pattern reaches;
(7) after this substrate was aimed at, adjustment needed this substrate slope of slope exposure to measured aerial image position, slope, is made public in this substrate slope;
(8) this substrate is down developed, and does subsequent technique and handle.
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| CN201010606317.1A CN102540748B (en) | 2010-12-22 | 2010-12-22 | Projection type slope exposure photoetching machine and method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103777468A (en) * | 2012-10-23 | 2014-05-07 | 无锡华润上华半导体有限公司 | High step slope based photoetching method and system |
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| JP2000124110A (en) * | 1998-10-13 | 2000-04-28 | Canon Inc | Peripheral aligner and method therefor |
| CN1530773A (en) * | 2003-03-17 | 2004-09-22 | ������������ʽ���� | Exposure device and method, Manufacturnig method and dispaying device for thin-membrane transistor |
| US20070003839A1 (en) * | 2003-08-07 | 2007-01-04 | Marc Rabarot | $M(c)method for producing inclined flank patterns by photolithography |
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2010
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2000124110A (en) * | 1998-10-13 | 2000-04-28 | Canon Inc | Peripheral aligner and method therefor |
| CN1530773A (en) * | 2003-03-17 | 2004-09-22 | ������������ʽ���� | Exposure device and method, Manufacturnig method and dispaying device for thin-membrane transistor |
| US20070003839A1 (en) * | 2003-08-07 | 2007-01-04 | Marc Rabarot | $M(c)method for producing inclined flank patterns by photolithography |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103777468A (en) * | 2012-10-23 | 2014-05-07 | 无锡华润上华半导体有限公司 | High step slope based photoetching method and system |
| CN103777468B (en) * | 2012-10-23 | 2016-06-15 | 无锡华润上华半导体有限公司 | Photoetching method and system based on high terraced slope |
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Address after: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |