CN102540731B - Exposure method adopting lithography machine - Google Patents
Exposure method adopting lithography machine Download PDFInfo
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- CN102540731B CN102540731B CN201010578044.4A CN201010578044A CN102540731B CN 102540731 B CN102540731 B CN 102540731B CN 201010578044 A CN201010578044 A CN 201010578044A CN 102540731 B CN102540731 B CN 102540731B
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Abstract
The invention provides a kind of exposure method adopting lithography machine, for scanning step photo-etching machine, wherein, comprise the following steps: the first step, by the direction of scanning inclination certain angle of slit-shaped camera lens along reticle objective table and disk objective table, make the focal length of the light projected on disk by slit-shaped camera lens be alternation; Second step, scan described reticle article carrying platform and described disk article carrying platform exposes.Compared with prior art, the invention has the beneficial effects as follows: only complete single exposure, conventional multifocal distance repeated exposure can be equivalent to, convenient and swift; And focal range is continuous lines deformation, in focal depth range, exposure figure contrast is more even, can obtain larger process window.
Description
Technical field
The present invention relates to a kind of exposure method adopting lithography machine, especially relate to a kind of scanning step photo-etching machine exposure method.
Background technology
In modern semiconductors photoetching process, for improving lithographic process window, multifocal apart from a kind of technology generally adopted during repeated exposure.Along with the reduction of semiconductor technology live width size, resolution enhance technology (RET, Resolution Enhancement Technology) is also generally used in advanced manufacturing process.Wherein a technology takes the mode of multiexposure, multiple exposure, increase the focal depth range (DOF of exposure, depth of focus), improve whole lithographic process window (DOF-EL, Depth of Focus and Exposure Latitude) simultaneously.In multiple focal length Exposure mode, the image comparison of final formation in whole focal range by homogenization, image comparison is to also diminishing, although contrast reduction can affect resolution and optical proximity effect, but because the change of contrast in whole focal depth range reduces, therefore the DOF of final lithographic process window becomes large.
As shown in Figure 1, general litho machine includes light-source system 1, reticle objective table 2, camera lens 3, and disk objective table 4.Move up and down disk objective table in y-axis, namely adjustable disk is in different focal lengths.As shown in Figure 2, existing multiple-exposure flow process comprises the following steps: the first step, first by disk gluing; Second step, focal plane carry out first time exposure; The height in y-direction of the 3rd step, adjustment disk objective table, carries out second time exposure in focal plane ... the height in y-direction of N step, adjustment disk objective table, carries out the N time exposure in focal plane; Finally, disk development is carried out.
Such as, the existing litho machine for advanced technologies production mainly contains two classes: step photo-etching machine and scanning step photo-etching machine.These two kinds of litho machines are all projection pantographics, by imaging on former after the certain multiplying power of the pattern reduction in reticle, its essential difference is the reticle objective table (reticle stage) of step photo-etching machine is fixed, whole image in reticle is Polaroid on disk through camera lens, and the figure (shot) namely on disk is once formed by whole photoetching machine lens; Reticle objective table and the disk objective table (wafer stage) of scanning stepper all can move, but reticle objective table can only move in y direction, and photoetching machine lens is slit-shaped, the x direction of camera lens is designed to the full-size of reticle permission, y direction is the slit of several mm wide, during exposure disk objective table and reticle objective table respectively the below of photoetching machine lens and above do relative motion in the y-direction, complete exposure.
And during stepper imaging, the figure of reticle is disposable through the imaging of whole lens area, therefore, multifocal distance repeated exposure can only by repeatedly changing focal length, and repeatedly repeated exposure has been come, and it is inevitable for sacrificing production capacity.
In addition, the lens plane of scan-type step photo-etching machine is parallel with disk plane or reticle plane under normal circumstances, the mode the same with step photo-etching machine can be adopted, changing focal length by the distance up and down of removable wafer objective table completes multifocal apart from repeated exposure, but this is also to sacrifice production capacity for cost.
Above-mentioned existing multifocal distance repeated exposure mode is by the Exposure mode of original routine from once increasing to repeatedly, although the process window of photoetching adds, equipment capacity reduces, and is unsuitable for large-scale production.
Summary of the invention
For the deficiencies in the prior art, the technical matters that the present invention solves is to provide a kind of utilization and scans step photo-etching machine characteristic, adopts special Exposure mode, reaches the multifocal exposure method adopting lithography machine apart from repeated exposure effect.
Object of the present invention realizes by providing following technical scheme:
A kind of exposure method adopting lithography machine, for scanning step photo-etching machine, wherein, comprises the following steps:
The first step, by the direction of scanning inclination certain angle of slit-shaped camera lens along reticle objective table and disk objective table, the focal length of the light projected on disk by slit-shaped camera lens is made to be alternation;
Second step, scan described reticle objective table and described disk objective table exposes.
Further, when scanning described disk objective table and described reticle objective table, described disk objective table remains parallel with described reticle objective table.
Again further, in exposure slit-shaped camera lens perpendicular to scanning lens direction keep level.
Further, described slit-shaped camera lens angle of inclination is less than or equal to 50 microradians.
Compared with prior art, the invention has the beneficial effects as follows: only complete single exposure, conventional multifocal distance repeated exposure can be equivalent to, convenient and swift; And focal range is continuous lines deformation, in focal depth range, exposure figure contrast is more even, can obtain larger process window.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the invention will be further described:
Fig. 1 is existing litho machine structural representation.
Fig. 2 is existing multiple-exposure process flow diagram.
Fig. 3 is photo-etching machine exposal process schematic of the present invention.
Embodiment
Referring to accompanying drawing, preferred forms of the present invention is described.
As shown in Figure 3, the exposure method of disclosed scanning stepper, is applicable to the bar/spacing technique of the hole technique in photoetching process, light field/details in a play not acted out on stage, but told through dialogues.When exposing, first camera lens there is certain angle along the direction of scanning adjustment inclination of reticle objective table and disk objective table, making the focal length of the light projected on disk by slit-shaped camera lens be alternation; Next, scan described reticle objective table and described disk objective table exposes.Adopt such method, make when single exposure, the multifocal effect apart from repeated exposure can be obtained, larger process window can be obtained.Certainly, disk objective table and reticle objective table, in the scanning process of movement in opposite directions, must remain parallel, otherwise can affect the picture quality of light formation.
It is worth mentioning that: the long limit of slit-shaped camera lens in exposure, namely perpendicular to the direction of scanning lens, must keep level.
Preferably, for typically scanning step photo-etching machine at present, the width of slit-shaped camera lens is generally 8mm, and camera lens tilts, and can to affect focal length be positive and negative 0.1 micron to 25 microradians.For advanced technologies, its maximum available depth of focus is generally less than 0.4 micron, and the maximum camera lens inclination angle that therefore the present invention allows is 50 microradians.
Although be example object, disclose the preferred embodiment of the present invention, but those of ordinary skill in the art will recognize, when not departing from scope and spirit of the present invention disclosed in appending claims, various improvement, increase and replacement are possible.
Claims (3)
1. an exposure method adopting lithography machine, for scanning step photo-etching machine, is characterized in that, comprising the following steps:
The first step, tilt slit-shaped camera lens along the direction of scanning of reticle objective table and disk objective table an angle, makes the focal length of the light projected on disk by slit-shaped camera lens be alternation;
Second step, scan described reticle objective table and described disk objective table exposes.
2. exposure method according to claim 1, is characterized in that, when scanning described disk objective table and described reticle objective table, described disk objective table remains parallel with described reticle objective table.
3. exposure method according to claim 1, is characterized in that, the angle of inclination of described slit-shaped camera lens is less than or equal to 50 microradians.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201010578044.4A CN102540731B (en) | 2010-12-08 | 2010-12-08 | Exposure method adopting lithography machine |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010578044.4A CN102540731B (en) | 2010-12-08 | 2010-12-08 | Exposure method adopting lithography machine |
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| CN102540731A CN102540731A (en) | 2012-07-04 |
| CN102540731B true CN102540731B (en) | 2015-08-19 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438546A (en) * | 2002-02-13 | 2003-08-27 | 佳能株式会社 | Exposing device and method, and making method for device using same |
| CN1588235A (en) * | 2004-09-15 | 2005-03-02 | 上海微电子装备有限公司 | Continuous scanning synchronous control method and system for step scanning photoetching machine |
| CN1800991A (en) * | 2002-06-28 | 2006-07-12 | 佳能株式会社 | Scanning exposure apparatus and method |
| CN101004556A (en) * | 2006-12-21 | 2007-07-25 | 上海微电子装备有限公司 | Method for optimizing route for exposing wafer |
| CN101364051A (en) * | 2007-08-08 | 2009-02-11 | 恩益禧电子股份有限公司 | Exposure equipment, exposure method, and manufacturing method for a semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006121015A (en) * | 2004-10-25 | 2006-05-11 | Nikon Corp | Method of measuring optical characteristic, exposure method, and mask for optical characteristic measurement |
| JP2009164296A (en) * | 2007-12-28 | 2009-07-23 | Canon Inc | Exposure apparatus and method of manufacturing device |
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2010
- 2010-12-08 CN CN201010578044.4A patent/CN102540731B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438546A (en) * | 2002-02-13 | 2003-08-27 | 佳能株式会社 | Exposing device and method, and making method for device using same |
| CN1800991A (en) * | 2002-06-28 | 2006-07-12 | 佳能株式会社 | Scanning exposure apparatus and method |
| CN1588235A (en) * | 2004-09-15 | 2005-03-02 | 上海微电子装备有限公司 | Continuous scanning synchronous control method and system for step scanning photoetching machine |
| CN101004556A (en) * | 2006-12-21 | 2007-07-25 | 上海微电子装备有限公司 | Method for optimizing route for exposing wafer |
| CN101364051A (en) * | 2007-08-08 | 2009-02-11 | 恩益禧电子股份有限公司 | Exposure equipment, exposure method, and manufacturing method for a semiconductor device |
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| CN102540731A (en) | 2012-07-04 |
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