CN102538655A - Device and method for measuring thickness of conductor membrane - Google Patents
Device and method for measuring thickness of conductor membrane Download PDFInfo
- Publication number
- CN102538655A CN102538655A CN2012100049150A CN201210004915A CN102538655A CN 102538655 A CN102538655 A CN 102538655A CN 2012100049150 A CN2012100049150 A CN 2012100049150A CN 201210004915 A CN201210004915 A CN 201210004915A CN 102538655 A CN102538655 A CN 102538655A
- Authority
- CN
- China
- Prior art keywords
- electrically conductive
- thickness
- conductive film
- vortex sensor
- current vortex
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a device and method for measuring the thickness of a conductor membrane. The device for measuring the thickness of the conductor membrane comprises an eddy current sensor, a force transducer, a front signal processing module and a data acquisition module, wherein the force transducer is connected with the eddy current sensor, and is used for measuring the magnitude of the electromagnetic force of the conductor membrane on the eddy current sensor; the front signal processing module is connected with the eddy current sensor, and is used for inputting alternating current with a preset frequency to the eddy current sensor; the front signal processing module is connected with the force transducer, and is used for acquiring a measuring signal of the force transducer and converting the measuring signal into an analog electric signal; and the data acquisition module is connected with the front signal processing module, and is used for acquiring the analog electric signal provided by the front signal processing module when the alternating current is on a preset phase and converting the analog electric signal into a digital signal. According to the measuring device disclosed by the embodiment of the invention, the thickness of the conductor membrane can be measured easily, conveniently and quickly.
Description
Technical field
The present invention relates to a kind of electrically conductive film thickness measurement mechanism with utilize said measurement mechanism to measure the method for the thickness of electrically conductive film.
Background technology
At present, the measuring method of the thickness of electrically conductive film comprises four-point probe method, electric vortex method, X ray absorption process and X fluorescence method.Four-point probe method can cause damage to the surface of electrically conductive film.X ray absorption process and X fluorescence method have radioactivity, therefore are unwell in general environment and use.Impedance variations, the inductance of electric vortex method through the current vortex sensor of single-frequency point changes or the thickness of electrically conductive film is measured in the variation of Q value, but have the follow-up signal dealing with complicated, to defectives such as having relatively high expectations of reliability and stability.
Summary of the invention
The present invention is intended to solve at least one of technical matters that exists in the prior art.
For this reason, one object of the present invention is to propose a kind of measurement mechanism that can measure the thickness of electrically conductive film easily, apace.
Another object of the present invention is to propose a kind of method that can measure the thickness of electrically conductive film easily, apace.
To achieve these goals, propose a kind of measurement mechanism of thickness of electrically conductive film according to the embodiment of first aspect present invention, the measurement mechanism of the thickness of said electrically conductive film comprises current vortex sensor; Link to each other with the said current vortex sensor size of the electromagnetic force that is used to measure the said electrically conductive film that said current vortex sensor receives of force cell, said force cell; The advance signal processing module; Said advance signal processing module links to each other with said current vortex sensor and is used for exchange current from preset frequency to the input of said current vortex sensor that have, and said advance signal processing module links to each other with said force cell and is used to obtain the measuring-signal of said force cell and converts said measuring-signal into analog electrical signal; And data acquisition module, said data acquisition module links to each other with said advance signal processing module and is used for when the predetermined phase of said exchange current, gathering said analog electrical signal that said advance signal processing module provides and converts said analog electrical signal into digital signal.
Through the thickness of utilization, can not cause damage to the surface of said electrically conductive film according to the measurement mechanism measurement electrically conductive film of the thickness of the electrically conductive film of the embodiment of the invention.And; Said measurement mechanism is through being provided with said force cell; Thereby the size that can utilize the electromagnetic force of the said electrically conductive film that said current vortex sensor receives characterizes the thickness of said electrically conductive film; Simplified measurement process widely so not only, and can simplify follow-up signal processing widely.Therefore, said measurement mechanism can be measured the thickness of said electrically conductive film easily, apace.
In addition, the measurement mechanism according to the thickness of the electrically conductive film of the embodiment of the invention can also have following additional technical characterictic:
According to one embodiment of present invention, the external diameter of the coil of said current vortex sensor is greater than 3 millimeters, and the number of turn of said coil is greater than 100.Can make the magnetic field intensity of said source electromagnetic field enough big like this, so that more accurately measure the thickness of the metal film of said wafer.
According to one embodiment of present invention, said force cell is a piezoelectric quartz crystal dynamic force sensor.Through utilizing said piezoelectric quartz crystal dynamic force sensor, can more accurately measure the size of the electromagnetic force of the said electrically conductive film that said current vortex sensor receives.
According to one embodiment of present invention, the measuring accuracy of said force cell is greater than 1mN.The size of the electromagnetic force of the said electrically conductive film that said current vortex sensor receives can be more accurately measured like this, and and then the thickness of said electrically conductive film can be more accurately measured.
Embodiment according to second aspect present invention proposes a kind of method of measuring the thickness of electrically conductive film; The method of the thickness of said measurement electrically conductive film comprises: A) current vortex sensor is placed on and the electrically conductive film of the known thickness position of preset distance at interval; To the exchange current of said current vortex sensor input preset frequency, and utilize force cell to measure the size of electromagnetic force of the electrically conductive film of the said known thickness that said current vortex sensor receives; B) utilize the advance signal processing module to obtain the measuring-signal of said force cell and convert said measuring-signal into analog electrical signal, utilize data acquisition module when the predetermined phase of said exchange current, to gather said analog electrical signal that said advance signal processing module provides then and convert said analog electrical signal into digital signal so that obtain the measured value of the said electromagnetic force that said current vortex sensor receives; C) repeating said steps A) and said B) repeatedly so that obtain the measured value of electromagnetic force of the electrically conductive film of a plurality of known thickness that said current vortex sensor receives; The thickness of the electrically conductive film of wherein said a plurality of known thickness differs from one another, and sets up the relation of measured value of electromagnetic force of electrically conductive film of thickness and said a plurality of known thickness that said current vortex sensor receives of the electrically conductive film of said a plurality of known thickness then; And D) electrically conductive film that said current vortex sensor is placed on and treats Thickness Measurement by Microwave is the position of said preset distance at interval; Repeating said steps A) and said B) so that the measured value of the electromagnetic force of the said electrically conductive film of treating Thickness Measurement by Microwave that obtains that said current vortex sensor receives, and obtain the said thickness of treating the electrically conductive film of Thickness Measurement by Microwave according to said relation.
Method according to the thickness of the measurement electrically conductive film of the embodiment of the invention is measured the thickness of said electrically conductive film through utilizing according to the described measurement mechanism of first aspect present invention, thereby can measure the thickness of said electrically conductive film easily, apace.
According to one embodiment of present invention, in said steps A) in, utilize the exchange current of said advance signal processing module to said current vortex sensor input preset frequency.
According to one embodiment of present invention, at said step B) in, said signal acquisition module produces the pulse signal of said preset frequency so that gather the analog electrical signal that said advance signal processing module provides at said predetermined phase.Can make said data acquisition module more accurately gather the analog electrical signal that said advance signal processing module provides like this at said predetermined phase; Thereby can make said measurement mechanism more accurately measure the size of the electromagnetic force of the said electrically conductive film that said current vortex sensor receives, can be so that said measurement mechanism be more accurately measured the thickness of said electrically conductive film.
According to one embodiment of present invention, saidly treat that the electrically conductive film of Thickness Measurement by Microwave is the metal film of wafer.
According to one embodiment of present invention, in said steps A) in, said current vortex sensor carries out whole scan to the metal film of said wafer.Can carry out global measuring to the metal film of said wafer like this.
According to one embodiment of present invention, said preset frequency is 4MHz-5MHz.Can more accurately measure the thickness of said electrically conductive film like this.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize through practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage obviously with are easily understood becoming the description of embodiment from combining figs, wherein:
Fig. 1 is the structural representation according to the measurement mechanism of the thickness of the electrically conductive film of the embodiment of the invention;
Fig. 2 is the process flow diagram according to the method for the thickness of the measurement electrically conductive film of the embodiment of the invention;
Fig. 3 shows the relation curve of frequency of size and the exchange current of the electromagnetic force that current vortex sensor receives under the thickness of different electrically conductive films when zero phase;
Fig. 4 shows the relation curve of thickness of size and the electrically conductive film of the electromagnetic force that current vortex sensor receives under the frequency of different exchange current when zero phase; With
Fig. 5 a-5d shows the linearity curve that is generated by the electromagnetic force among Fig. 4-thickness relation curve.
Embodiment
Describe embodiments of the invention below in detail, the example of said embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Be exemplary through the embodiment that is described with reference to the drawings below, only be used to explain the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention; It will be appreciated that; Term " vertically ", " laterally ", " on ", the orientation of indications such as D score, " preceding ", " back ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward " or position relation be for based on orientation shown in the drawings or position relation; Only be to describe with simplifying for the ease of describing the present invention; Rather than the device or the element of indication or hint indication must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as limitation of the present invention.
In addition, term " first ", " second " only are used to describe purpose, and can not be interpreted as indication or hint relative importance.
In description of the invention, unless otherwise prescribed and limit, need to prove; Term " installation ", " linking to each other ", " connection " should be done broad understanding, for example, can be mechanical connection or electrical connection; Also can be the connection of two element internals, can be directly to link to each other, and also can link to each other indirectly through intermediary; For those of ordinary skill in the art, can understand the concrete implication of above-mentioned term as the case may be.
Below with reference to the measurement mechanism 10 of figure 1 description according to the thickness of the electrically conductive film 20 of the embodiment of the invention.As shown in Figure 1, comprise current vortex sensor 100, force cell 200, advance signal processing module 300 and data acquisition module 400 according to the measurement mechanism 10 of the thickness of the electrically conductive film 20 of the embodiment of the invention.
Link to each other with current vortex sensor 100 size of the electromagnetic force that is used to measure the electrically conductive film 20 that current vortex sensor 100 receives of force cell 200.Advance signal processing module 300 links to each other with current vortex sensor 100 and is used for importing the exchange current with preset frequency to current vortex sensor 100, and advance signal processing module 300 links to each other with force cell 200 and is used to obtain the measuring-signal of force cell 200 and converts said measuring-signal into analog electrical signal.Data acquisition module 400 links to each other with advance signal processing module 300 and is used for when the predetermined phase of said exchange current gathering analog electrical signal that advance signal processing module 300 provides and converts said analog electrical signal into digital signal.
Below with reference to the method for figure 2 descriptions according to the thickness of the measurement electrically conductive film 20 of the embodiment of the invention.As shown in Figure 2, comprise according to the method for the thickness of the measurement electrically conductive film 20 of the embodiment of the invention:
A) current vortex sensor 100 is placed on and the electrically conductive film of known thickness 20 position of preset distance L at interval; To the exchange current of current vortex sensor 100 input preset frequencies, and utilize force cell 200 to measure the size of electromagnetic force of the electrically conductive film 20 of the known thickness that current vortex sensors 100 receive;
B) utilize advance signal processing module 300 to obtain the measuring-signal of force cell 200; And advance signal processing module 300 converts said measuring-signal into analog electrical signal, utilizes data acquisition module 400 when the predetermined phase of said exchange current, to gather said analog electrical signal that advance signal processing module 300 provides then and converts said analog electrical signal into digital signal so that obtain the measured value of the said electromagnetic force that current vortex sensor 100 receives;
C) repeating said steps A) and said B) repeatedly so that obtain the measured value of electromagnetic force of the electrically conductive film 20 of a plurality of known thickness that current vortex sensor 100 receives; The thickness of the electrically conductive film 20 of wherein said a plurality of known thickness differs from one another, and sets up the relation of measured value of electromagnetic force of electrically conductive film 20 of thickness and said a plurality of known thickness that current vortex sensor 100 receives of the electrically conductive film 20 of said a plurality of known thickness then; With
D) electrically conductive film 20 that current vortex sensor 100 is placed on and treats Thickness Measurement by Microwave is the position of said preset distance L at interval; Repeating said steps A) and said B) so that the measured value of the electromagnetic force of the said electrically conductive film 20 of treating Thickness Measurement by Microwave that obtains that current vortex sensor 100 receives, and obtain the said thickness of treating the electrically conductive film 20 of Thickness Measurement by Microwave according to said relation.
Particularly, at first can current vortex sensor 100 be placed on and the electrically conductive film of known thickness 20 position of preset distance L (being lift off was more h) at interval, for example can current vortex sensor 100 be placed on the top of the electrically conductive film 20 of said known thickness.To the exchange current of current vortex sensor 100 input preset frequencies, can around current vortex sensor 100, produce the source electromagnetic field so then.Because the effect of said source electromagnetic field can produce the induced electricity eddy current in the electrically conductive film 20 of known thickness, and supervene corresponding induction field.Because the interaction of said source electromagnetic field and said induction field; And the electrically conductive film 20 of known thickness is mobile with the electric current in the current vortex sensor 100, therefore between the electrically conductive film 20 of current vortex sensor 100 and known thickness, will produce interactional electromagnetic force.Utilize force cell 200 can measure the size of electromagnetic force of the electrically conductive film 20 of the known thickness that current vortex sensor 100 receives.Wherein, the electromagnetic force equal and opposite in direction of the current vortex sensor 100 that receives of the electrically conductive film 20 of the electromagnetic force of the electrically conductive film 20 of the known thickness that receives of current vortex sensor 100 and known thickness and in the opposite direction.
Wherein, the frequency of the conductivity of the thickness of the size of said induction field and lift off was more h, electrically conductive film 20, electrically conductive film 20 and said exchange current is relevant.In other words, the frequency of the conductivity of the thickness of the size of the said electromagnetic force that receives of current vortex sensor 100 and lift off was more h, electrically conductive film 20, electrically conductive film 20 and said exchange current is relevant.The conductivity through keeping lift off was more h, electrically conductive film 20 and the frequency of said exchange current are constant, can make the size of the said electromagnetic force that current vortex sensor 100 receives corresponding one by one with the thickness of electrically conductive film 20.Can characterize the thickness of electrically conductive film 20 in order to the size of the said electromagnetic force that receives with current vortex sensor 100.
Because the alternation characteristic of said exchange current; The size and Orientation of the said electromagnetic force that current vortex sensor 100 receives also can be with the variation of correspondent frequency generating period property, gathers the said analog electrical signal that advance signal processing module 300 provides in the time of therefore in measuring each time, can utilizing the predetermined phase of data acquisition module 400 at said exchange current.Data acquisition module 400 converts said analog electrical signal into digital signal so that obtain the measured value of the said electromagnetic force that current vortex sensor 100 receives.Can utilize display device (for example computing machine 500) to read the measured value of the said electromagnetic force that current vortex sensor 100 receives.
Choose the electrically conductive film 20 (for example 50nm, 100nm, 200nm, 300nm, 400nm, 500nm, 700nm, 900nm, 1200nm, 1500nm) of the known thickness that a plurality of thickness differ from one another; And repeating said steps A accordingly) and said B) repeatedly so that obtain the measured value of electromagnetic force of the electrically conductive film 20 of a plurality of known thickness that current vortex sensor 100 receives, set up the relation (for example relation curve) of measured value of electromagnetic force of electrically conductive film 20 of thickness and said a plurality of known thickness that current vortex sensor 100 receives of the electrically conductive film 20 of said a plurality of known thickness then.
The electrically conductive film 20 that current vortex sensor 100 was placed on and treated Thickness Measurement by Microwave at interval the position of said preset distance L so that keep lift off was more h constant; Repeating said steps A then) and said B) so that the measured value of the electromagnetic force of the said electrically conductive film 20 of treating Thickness Measurement by Microwave that obtains that current vortex sensor 100 receives can obtain the said thickness of treating the electrically conductive film 20 of Thickness Measurement by Microwave according to said relation at last.
Through the thickness of utilization, can not cause damage to the surface of electrically conductive film 20 according to the measurement mechanism 10 measurement electrically conductive films 20 of the thickness of the electrically conductive film 20 of the embodiment of the invention.And; Measurement mechanism 10 is through being provided with force cell 200; Thereby the size that can utilize the electromagnetic force of the electrically conductive film 20 that current vortex sensor 100 receives characterizes the thickness of electrically conductive film 20; Simplified measurement process widely so not only, and can simplify follow-up signal processing widely.Therefore, measurement mechanism 10 can be measured the thickness of electrically conductive film 20 easily, apace.
Method according to the thickness of the measurement electrically conductive film 20 of the embodiment of the invention is measured the thickness of electrically conductive film 20 through utilizing measurement mechanism 10, thereby can measure the thickness of electrically conductive film 20 easily, apace.
In some embodiments of the invention, in said steps A) in, can utilize the exchange current of advance signal processing module 300 to current vortex sensor 100 input preset frequencies.Particularly, the frequency of said exchange current can be 100KHz-50MHz, and promptly said preset frequency is 100KHz-50MHz.
In one embodiment of the invention, at said step B) in, data acquisition module 400 can produce the pulse signal of said preset frequency so that gather the analog electrical signal that advance signal processing module 300 provides at said predetermined phase (for example zero phase).In other words, the frequency of said pulse signal equals the frequency of said exchange current.Can make data acquisition module 400 more accurately gather the analog electrical signal that advance signal processing module 300 provides like this at said predetermined phase; Thereby can make measurement mechanism 10 more accurately measure the size of the electromagnetic force of the electrically conductive film 20 that current vortex sensor 100 receives, can be so that measurement mechanism 10 be more accurately measured the thickness of electrically conductive film 20.
Fig. 3 shows the relation curve of frequency of size and said exchange current of the electromagnetic force of the electrically conductive film 20 that current vortex sensor 100 receives under the thickness of different electrically conductive films when zero phase.Can find out the difference between the thickness of the electrically conductive film 20 that big or small enough resolutions of the electromagnetic force of the electrically conductive film 20 that current vortex sensor 100 receives are different by Fig. 3.
Fig. 4 shows the relation curve of thickness of size and electrically conductive film 20 of the electromagnetic force of the electrically conductive film 20 that current vortex sensor 100 receives under the frequency of different said exchange current when zero phase.Can find out that by Fig. 4 when the frequency of said exchange current was 3MHz-6MHz, the linearity of said relation curve was best.Said relation curve to the 3MHz-6MHz frequency band carries out linear fit, can obtain linearity curve as shown in Figure 5.Can find out that by Fig. 5 when the frequency of said exchange current was 4MHz-5MHz, the linear of said linearity curve was best.Advantageously, said preset frequency can be 4MHz-5MHz.In other words, the frequency of said exchange current can be 4MHz-5MHz.Can more accurately measure the thickness of electrically conductive film 20 like this.
In examples more of the present invention, the measuring accuracy of force cell 200 can be greater than 1mN.The size of the electromagnetic force of the electrically conductive film 20 that current vortex sensor 100 receives can be more accurately measured like this, and and then the thickness of electrically conductive film 20 can be more accurately measured.Advantageously, the ultimate resolution of force cell 200 can utilize the thickness of the electrically conductive film 20 of 10 pairs of nanometer scale of measurement mechanism to measure more than or equal to 0.1mN/nm like this.
In an example of the present invention, force cell 200 can be a piezoelectric quartz crystal dynamic force sensor.Through utilizing said piezoelectric quartz crystal dynamic force sensor, can more accurately measure the size of the electromagnetic force of the electrically conductive film 20 that current vortex sensor 100 receives.
In examples more of the present invention, saidly treat that the electrically conductive film 20 of Thickness Measurement by Microwave can be the metal film of wafer.In other words, can utilize the method for the thickness of measurement mechanism 10 and said measurement electrically conductive film 20 to measure the thickness of the metal film of said wafer.In an example of the present invention, the external diameter of the coil of current vortex sensor 100 can be greater than 3 millimeters, and the number of turn of said coil can be greater than 100.Can make the magnetic field intensity of said source electromagnetic field enough big like this, so that more accurately measure the thickness of the metal film of said wafer.
In a concrete example of the present invention, in said steps A) in, current vortex sensor 100 can carry out whole scan to the metal film of said wafer.Can carry out global measuring to the metal film of said wafer like this.
Can measure the thickness of electrically conductive film 20 easily, apace according to the measurement mechanism 10 of the embodiment of the invention.
In the description of this instructions, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means the concrete characteristic, structure, material or the characteristics that combine this embodiment or example to describe and is contained at least one embodiment of the present invention or the example.In this manual, the schematic statement to above-mentioned term not necessarily refers to identical embodiment or example.And concrete characteristic, structure, material or the characteristics of description can combine with suitable manner in any one or more embodiment or example.
Although illustrated and described embodiments of the invention; Those having ordinary skill in the art will appreciate that: under the situation that does not break away from principle of the present invention and aim, can carry out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is limited claim and equivalent thereof.
Claims (10)
1. the measurement mechanism of the thickness of an electrically conductive film is characterized in that, comprising:
Current vortex sensor;
Link to each other with the said current vortex sensor size of the electromagnetic force that is used to measure the said electrically conductive film that said current vortex sensor receives of force cell, said force cell;
The advance signal processing module; Said advance signal processing module links to each other with said current vortex sensor and is used for exchange current from preset frequency to the input of said current vortex sensor that have, and said advance signal processing module links to each other with said force cell and is used to obtain the measuring-signal of said force cell and converts said measuring-signal into analog electrical signal; With
Data acquisition module, said data acquisition module link to each other with said advance signal processing module and are used for when the predetermined phase of said exchange current, gathering said analog electrical signal that said advance signal processing module provides and convert said analog electrical signal into digital signal.
2. the measurement mechanism of the thickness of electrically conductive film according to claim 1 is characterized in that, the external diameter of the coil of said current vortex sensor is greater than 3 millimeters, and the number of turn of said coil is greater than 100.
3. the measurement mechanism of the thickness of electrically conductive film according to claim 1 is characterized in that, said force cell is a piezoelectric quartz crystal dynamic force sensor.
4. according to the measurement mechanism of the thickness of claim 1 or 3 described electrically conductive films, it is characterized in that the measuring accuracy of said force cell is greater than 1mN.
5. a method of measuring the thickness of electrically conductive film is characterized in that, comprising:
A) current vortex sensor is placed on and the electrically conductive film of the known thickness position of preset distance at interval; To the exchange current of said current vortex sensor input preset frequency, and utilize force cell to measure the size of electromagnetic force of the electrically conductive film of the said known thickness that said current vortex sensor receives;
B) utilize the advance signal processing module to obtain the measuring-signal of said force cell and convert said measuring-signal into analog electrical signal, utilize data acquisition module when the predetermined phase of said exchange current, to gather said analog electrical signal that said advance signal processing module provides then and convert said analog electrical signal into digital signal so that obtain the measured value of the said electromagnetic force that said current vortex sensor receives;
C) repeating said steps A) and said B) repeatedly so that obtain the measured value of electromagnetic force of the electrically conductive film of a plurality of known thickness that said current vortex sensor receives; The thickness of the electrically conductive film of wherein said a plurality of known thickness differs from one another, and sets up the relation of measured value of electromagnetic force of electrically conductive film of thickness and said a plurality of known thickness that said current vortex sensor receives of the electrically conductive film of said a plurality of known thickness then; With
D) electrically conductive film that said current vortex sensor is placed on and treats Thickness Measurement by Microwave is the position of said preset distance at interval; Repeating said steps A) and said B) so that the measured value of the electromagnetic force of the said electrically conductive film of treating Thickness Measurement by Microwave that obtains that said current vortex sensor receives, and obtain the said thickness of treating the electrically conductive film of Thickness Measurement by Microwave according to said relation.
6. the method for the thickness of measurement electrically conductive film according to claim 5 is characterized in that, in said steps A) in, the exchange current of said advance signal processing module utilized to said current vortex sensor input preset frequency.
7. the method for the thickness of measurement electrically conductive film according to claim 5; It is characterized in that; At said step B) in, said signal acquisition module produces the pulse signal of said preset frequency so that gather the analog electrical signal that said advance signal processing module provides at said predetermined phase.
8. the method for the thickness of measurement electrically conductive film according to claim 5 is characterized in that, saidly treats that the electrically conductive film of Thickness Measurement by Microwave is the metal film of wafer.
9. the method for the thickness of measurement electrically conductive film according to claim 8 is characterized in that, in said steps A) in, said current vortex sensor carries out whole scan to the metal film of said wafer.
10. the method for the thickness of measurement electrically conductive film according to claim 5 is characterized in that, said preset frequency is 4MHz-5MHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210004915.0A CN102538655B (en) | 2012-01-09 | 2012-01-09 | Device and method for measuring thickness of conductor membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210004915.0A CN102538655B (en) | 2012-01-09 | 2012-01-09 | Device and method for measuring thickness of conductor membrane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102538655A true CN102538655A (en) | 2012-07-04 |
| CN102538655B CN102538655B (en) | 2014-04-09 |
Family
ID=46346170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210004915.0A Active CN102538655B (en) | 2012-01-09 | 2012-01-09 | Device and method for measuring thickness of conductor membrane |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102538655B (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103234449A (en) * | 2013-05-09 | 2013-08-07 | 清华大学 | Conductor film thickness measurement method and device capable of effectively reducing effect of fluctuation of lift-off |
| CN103344174A (en) * | 2013-07-12 | 2013-10-09 | 爱德森（厦门）电子有限公司 | Method for measuring non-uniform conductive material surface coating thickness according to eddy currents |
| CN103615965A (en) * | 2013-12-20 | 2014-03-05 | 爱德森（厦门）电子有限公司 | Eddy-based method for measuring thickness of covering layer on surface of cambered metal with variable curvature |
| CN103713041A (en) * | 2013-12-06 | 2014-04-09 | 中铁宝桥（南京）有限公司 | Depth measurement device for opening microdefects on ferro magnetic material surface and measurement mehtod |
| CN103759630A (en) * | 2014-01-22 | 2014-04-30 | 长沙天恒测控技术有限公司 | Device and method for measuring thickness of electrical steel |
| CN104465481A (en) * | 2013-09-22 | 2015-03-25 | 盛美半导体设备（上海）有限公司 | Wafer chuck |
| CN104913716A (en) * | 2015-06-09 | 2015-09-16 | 电子科技大学 | Single-layer conductive coating thickness and conductivity eddy current detection method and device |
| CN106197249A (en) * | 2016-09-30 | 2016-12-07 | 天津华海清科机电科技有限公司 | Copper layer thickness on-line measurement system and control method thereof during CMP |
| CN106524892A (en) * | 2016-10-11 | 2017-03-22 | 武汉华宇目检测装备有限公司 | Steel pipe wall thickness measuring method based on eddy current permeability measurement |
| CN110146003A (en) * | 2019-06-13 | 2019-08-20 | 北京科技大学 | It is a kind of to utilize rare earth permanent-magnetic material measurement steel pipe wall thickness and mass defect method |
| CN111750769A (en) * | 2020-06-18 | 2020-10-09 | 哈尔滨工程大学 | Determinant conductivity probe system suitable for measuring thickness of annular flow liquid film in narrow rectangular channel and liquid film thickness measuring method |
| CN112729096A (en) * | 2020-12-30 | 2021-04-30 | 清华大学 | Metal film thickness measuring device for chemical mechanical polishing |
| CN113720253A (en) * | 2021-09-17 | 2021-11-30 | 北京科技大学 | Steel plate thickness measuring method and device based on magnetic force |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5430376A (en) * | 1993-06-09 | 1995-07-04 | General Electric Company | Combined thermoelectric and eddy-current method and apparatus for nondestructive testing of metallic of semiconductor coated objects |
| US20020053904A1 (en) * | 2000-11-08 | 2002-05-09 | Ulvac, Inc. | Apparatus for measuring the thickness of a thin film |
| CN1739002A (en) * | 2002-12-13 | 2006-02-22 | 应用材料有限公司 | Method and apparatus for measuring thickness of a test object between two eddy current sensor heads |
| CN2938086Y (en) * | 2006-08-17 | 2007-08-22 | 游凤荷 | Vortex detector for surface hardening layer of metal material |
| US20100171493A1 (en) * | 2009-01-07 | 2010-07-08 | Robert Standen | Method and device for measuring thickness of a substrate |
| CN101788260A (en) * | 2010-03-18 | 2010-07-28 | 清华大学 | Eddy current measuring method of thickness of metal film |
-
2012
- 2012-01-09 CN CN201210004915.0A patent/CN102538655B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5430376A (en) * | 1993-06-09 | 1995-07-04 | General Electric Company | Combined thermoelectric and eddy-current method and apparatus for nondestructive testing of metallic of semiconductor coated objects |
| US20020053904A1 (en) * | 2000-11-08 | 2002-05-09 | Ulvac, Inc. | Apparatus for measuring the thickness of a thin film |
| CN1739002A (en) * | 2002-12-13 | 2006-02-22 | 应用材料有限公司 | Method and apparatus for measuring thickness of a test object between two eddy current sensor heads |
| CN2938086Y (en) * | 2006-08-17 | 2007-08-22 | 游凤荷 | Vortex detector for surface hardening layer of metal material |
| US20100171493A1 (en) * | 2009-01-07 | 2010-07-08 | Robert Standen | Method and device for measuring thickness of a substrate |
| CN101788260A (en) * | 2010-03-18 | 2010-07-28 | 清华大学 | Eddy current measuring method of thickness of metal film |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103234449A (en) * | 2013-05-09 | 2013-08-07 | 清华大学 | Conductor film thickness measurement method and device capable of effectively reducing effect of fluctuation of lift-off |
| CN103234449B (en) * | 2013-05-09 | 2015-12-09 | 清华大学 | Reduce electrically conductive film method for measuring thickness and the device of lift-off influence of fluctuations |
| CN103344174B (en) * | 2013-07-12 | 2016-03-09 | 爱德森（厦门）电子有限公司 | A kind of eddy current thickness measuring method of uneven conductive material surface cover thickness |
| CN103344174A (en) * | 2013-07-12 | 2013-10-09 | 爱德森（厦门）电子有限公司 | Method for measuring non-uniform conductive material surface coating thickness according to eddy currents |
| CN104465481A (en) * | 2013-09-22 | 2015-03-25 | 盛美半导体设备（上海）有限公司 | Wafer chuck |
| CN103713041A (en) * | 2013-12-06 | 2014-04-09 | 中铁宝桥（南京）有限公司 | Depth measurement device for opening microdefects on ferro magnetic material surface and measurement mehtod |
| CN103713041B (en) * | 2013-12-06 | 2016-11-02 | 中铁宝桥（南京）有限公司 | The depth measurement device of ferrimagnet surface opening microdefect and measuring method |
| CN103615965A (en) * | 2013-12-20 | 2014-03-05 | 爱德森（厦门）电子有限公司 | Eddy-based method for measuring thickness of covering layer on surface of cambered metal with variable curvature |
| CN103759630A (en) * | 2014-01-22 | 2014-04-30 | 长沙天恒测控技术有限公司 | Device and method for measuring thickness of electrical steel |
| CN103759630B (en) * | 2014-01-22 | 2017-05-24 | 长沙天恒测控技术有限公司 | Device and method for measuring thickness of electrical steel |
| CN104913716A (en) * | 2015-06-09 | 2015-09-16 | 电子科技大学 | Single-layer conductive coating thickness and conductivity eddy current detection method and device |
| CN104913716B (en) * | 2015-06-09 | 2017-06-06 | 电子科技大学 | A kind of single layer of conductive coating layer thickness and Eddy Conductivity detection method and device |
| CN106197249A (en) * | 2016-09-30 | 2016-12-07 | 天津华海清科机电科技有限公司 | Copper layer thickness on-line measurement system and control method thereof during CMP |
| CN106524892A (en) * | 2016-10-11 | 2017-03-22 | 武汉华宇目检测装备有限公司 | Steel pipe wall thickness measuring method based on eddy current permeability measurement |
| CN110146003A (en) * | 2019-06-13 | 2019-08-20 | 北京科技大学 | It is a kind of to utilize rare earth permanent-magnetic material measurement steel pipe wall thickness and mass defect method |
| CN111750769A (en) * | 2020-06-18 | 2020-10-09 | 哈尔滨工程大学 | Determinant conductivity probe system suitable for measuring thickness of annular flow liquid film in narrow rectangular channel and liquid film thickness measuring method |
| CN111750769B (en) * | 2020-06-18 | 2022-04-05 | 哈尔滨工程大学 | Determinant conductivity probe system suitable for measuring thickness of annular flow liquid film in narrow rectangular channel and liquid film thickness measuring method |
| CN112729096A (en) * | 2020-12-30 | 2021-04-30 | 清华大学 | Metal film thickness measuring device for chemical mechanical polishing |
| CN113720253A (en) * | 2021-09-17 | 2021-11-30 | 北京科技大学 | Steel plate thickness measuring method and device based on magnetic force |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102538655B (en) | 2014-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102538655A (en) | Device and method for measuring thickness of conductor membrane | |
| CN103235195B (en) | A kind of Non-contact static detection device | |
| CN103234449B (en) | Reduce electrically conductive film method for measuring thickness and the device of lift-off influence of fluctuations | |
| CN103245824B (en) | Non-contact D-dot voltage transformer and voltage detection self-correcting method thereof | |
| CN203489834U (en) | Eddy current displacement sensor | |
| CN103499022B (en) | A kind of sensor distinguishing pipeline surfaces externally and internally corrosion default | |
| CN102607391B (en) | Method for measuring displacement of planar motor rotor | |
| CN106597065A (en) | MEMS non-contact high-voltage direct current electroscope | |
| CN111043946B (en) | Magnetic field interference noise test system for eddy current displacement sensor | |
| CN104142431B (en) | Eddy current conductivity measuring sensor | |
| CN103245819A (en) | Method for measuring direct current or direct voltage by adopting magnetic excitation resonant piezoresistive cantilever beam | |
| WO2023029561A1 (en) | Apparatus for detecting defect of steel wire cord fabric | |
| CN103542962A (en) | Pressure testing device | |
| CN104776791B (en) | A kind of method of displacement sensor and measurement displacement | |
| CN113093289A (en) | High-resolution nondestructive testing device for parameters of metal body in embedded structure | |
| CN204228305U (en) | Magnetic Memory-Barkhausen's fusion detection stress system | |
| CN101782418A (en) | Non-contact capacitance liquid level meter | |
| CN104678339B (en) | Calibration device, system and method for probe type microwave voltage measurement system | |
| CN202631468U (en) | Metal surface scar detection device based on sensor array | |
| CN103460057A (en) | Method for the contactless determination of an electrical potential using an oscillating electrode, and device | |
| CN200944076Y (en) | Intelligent vibration monitoring protector | |
| CN105352584A (en) | Weak signal detection method based on capacitive sensor | |
| CN109932583A (en) | Piezoelectric vibrator generating capacity test system is detected based on vibration high accuracy | |
| CN103940860A (en) | Method for detecting non-metallic material discontinuity by series resonance circuit capacitor | |
| CN110568063A (en) | Multi-frequency excitation eddy current field phase gradient spectrum nondestructive testing method and system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |