CN102528951A - Method for taking seed crystal wafer of quartz crystal - Google Patents
Method for taking seed crystal wafer of quartz crystal Download PDFInfo
- Publication number
- CN102528951A CN102528951A CN2010106219993A CN201010621999A CN102528951A CN 102528951 A CN102528951 A CN 102528951A CN 2010106219993 A CN2010106219993 A CN 2010106219993A CN 201010621999 A CN201010621999 A CN 201010621999A CN 102528951 A CN102528951 A CN 102528951A
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- CN
- China
- Prior art keywords
- quartz crystal
- seed crystal
- seed wafer
- quartz
- crystal wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the field of cutting of quartz crystals, and discloses a method for taking a seed crystal wafer of a quartz crystal. The method comprises the following steps of: forming a groove with the depth of 2mm on the side surface of the quartz crystal containing the seed crystal wafer opposite to the seed crystal wafer by using a surface grinding machine; and cutting the quartz crystal on which the groove is formed into strip-type sheets of a certain specification, wherein a strip-type sheet which is slightly shorter than other strip-type sheets is the seed crystal wafer. Due to the adoption of the technical scheme, the method is simple, the efficiency and the accuracy rate are improved, labor power is saved, and production cost is reduced.
Description
Technical field
The present invention relates to quartz crystal cutting field, is a kind of method of getting the quartz crystal seed wafer.
Background technology
The part of quartz crystal bosom is called seed wafer, and seed wafer is out of use, behind the quartz crystal cut growth silver, must seed wafer be taken out.The method of getting seed wafer now is with behind the quartz crystal cut growth silver, chooses seed wafer through manual method with the human eye explanation, and this method efficient is low, poor accuracy.
Summary of the invention
The objective of the invention is to provide a kind of new method of getting the quartz crystal seed wafer.
Technical scheme of the present invention is: the quartz crystal that will contain seed wafer earlier uses surface grinding machine on the position of seed wafer, to open the groove of a degree of depth as 2mm in the side of quartz crystal; Be cut into the strip sheet of certain specification to the quartz crystal that ends groove with multi-cutting machine again, the strip sheet shorter slightly than other strip sheet is seed wafer.
Owing to adopted technique scheme, method is simple, has improved efficient and accuracy rate, has practiced thrift manpower, has reduced production cost.
The specific embodiment
Below in conjunction with embodiment the present invention is further described.
The quartz crystal that will contain seed wafer earlier uses surface grinding machine on the position of seed wafer, to open the groove of a degree of depth as 2mm in the side of quartz crystal; Be cut into the strip sheet of certain specification to the quartz crystal that ends groove with multi-cutting machine again, the strip sheet shorter slightly than other strip sheet is seed wafer.Take out this part strip sheet and promptly taken out the seed wafer in the quartz crystal.
Claims (1)
1. method of getting the quartz crystal seed wafer; It is characterized in that the quartz crystal that will contain seed wafer earlier uses surface grinding machine on the position of seed wafer, to open the groove of a degree of depth as 2mm in the side of quartz crystal; Be cut into the strip sheet of certain specification to the quartz crystal that ends groove with multi-cutting machine again, the strip sheet shorter slightly than other strip sheet is seed wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106219993A CN102528951A (en) | 2010-12-28 | 2010-12-28 | Method for taking seed crystal wafer of quartz crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106219993A CN102528951A (en) | 2010-12-28 | 2010-12-28 | Method for taking seed crystal wafer of quartz crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102528951A true CN102528951A (en) | 2012-07-04 |
Family
ID=46337601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010106219993A Pending CN102528951A (en) | 2010-12-28 | 2010-12-28 | Method for taking seed crystal wafer of quartz crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102528951A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2858730A (en) * | 1955-12-30 | 1958-11-04 | Ibm | Germanium crystallographic orientation |
| JPS60118698A (en) * | 1983-11-29 | 1985-06-26 | Sumitomo Electric Ind Ltd | Method for producing of (orientation flat) plane of compound semiconductor single crystal |
| RU1786762C (en) * | 1990-05-11 | 1995-02-20 | Александра Леонидовна Беляева | Method of making seed crystals |
| CN101603202A (en) * | 2009-05-11 | 2009-12-16 | 北京石晶光电科技股份有限公司 | A kind of seed crystal working method that can present the quartz crystal characteristic structure and shape |
| US20100003492A1 (en) * | 2008-07-07 | 2010-01-07 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
| JP2010083743A (en) * | 2008-09-30 | 2010-04-15 | Mitsubishi Materials Corp | Apparatus for manufacturing seed for polycrystalline silicon manufacture |
-
2010
- 2010-12-28 CN CN2010106219993A patent/CN102528951A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2858730A (en) * | 1955-12-30 | 1958-11-04 | Ibm | Germanium crystallographic orientation |
| JPS60118698A (en) * | 1983-11-29 | 1985-06-26 | Sumitomo Electric Ind Ltd | Method for producing of (orientation flat) plane of compound semiconductor single crystal |
| RU1786762C (en) * | 1990-05-11 | 1995-02-20 | Александра Леонидовна Беляева | Method of making seed crystals |
| US20100003492A1 (en) * | 2008-07-07 | 2010-01-07 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
| JP2010083743A (en) * | 2008-09-30 | 2010-04-15 | Mitsubishi Materials Corp | Apparatus for manufacturing seed for polycrystalline silicon manufacture |
| CN101603202A (en) * | 2009-05-11 | 2009-12-16 | 北京石晶光电科技股份有限公司 | A kind of seed crystal working method that can present the quartz crystal characteristic structure and shape |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 441300 Zengdou Economic Development Zone, Suizhou District, Hubei Province, Hubei (Polytron Technologies Inc) Applicant after: Hubei TKD Electronic Technology Co., Ltd. Address before: 441300 Zengdou Economic Development Zone, Suizhou District, Hubei (Hubei Crystal Electronic Technology Co., Ltd.) Applicant before: Hubei Taijing Electronic Technology Co., Ltd. |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120704 |