CN102528637A - Chemical mechanical polishing equipment and polishing unit thereof - Google Patents
Chemical mechanical polishing equipment and polishing unit thereof Download PDFInfo
- Publication number
- CN102528637A CN102528637A CN2010106166784A CN201010616678A CN102528637A CN 102528637 A CN102528637 A CN 102528637A CN 2010106166784 A CN2010106166784 A CN 2010106166784A CN 201010616678 A CN201010616678 A CN 201010616678A CN 102528637 A CN102528637 A CN 102528637A
- Authority
- CN
- China
- Prior art keywords
- grinding
- grinding pad
- wafer
- pad
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
A polishing unit used for chemical mechanical polishing equipment comprises polishing plates, polishing pads, polishing pad arms and polishing slurry supply paths; the polishing plates are used for bearing provided wafers; the polishing pads are arranged in the positions opposite to the polishing plates, and the number of the polishing pads opposite to each polishing plate is greater than 1; during polishing, the polishing pads move relative to the provided wafers; the polishing pad arms are arranged in the positions opposite to the polishing plates; one end of each polishing pad arm is fixed, and the other end is fixed with one polishing pad; during polishing, the polishing pad arms drive the polishing pads to move relative to the provided wafers and ensure that the polishing pads are contacted with the provided wafers during polishing; and the polishing slurry supply paths supply polishing slurry between the polishing pads and polished wafers during polishing. The invention further provides corresponding chemical mechanical polishing equipment. Due to adoption of the invention, the chemical mechanical polishing equipment can be miniaturized advantageously, and the polishing efficiency can be improved.
Description
Technical field
The present invention relates to semiconductor applications, particularly chemical-mechanical grinding device and grinding unit thereof.
Background technology
Cmp (CMP; Chemical Mechanical Polishing) technology was introduced the integrated circuit process industry by IBM in 1984; And at first be used for the intermetallic dielectric (IMD of postchannel process; Inter Metal Dielectric) planarization is used for the planarization of tungsten then through the improvement of equipment and technology, be used for the planarization of shallow trench isolation from (STI) and copper subsequently.Cmp is a very active technology in the IC processing procedure in recent years.
The mechanism of cmp is by the surfacing of grinding wafers and grind the superficial layer that the relatively easy removal of chemical reaction generation one deck takes place slurry; Said superficial layer is through grinding the grinding agent in the slurry and be applied to by the grinding pressure on the grinding wafers, with the relative motion of grinding pad in mechanically ground off.Especially, when metal material is carried out CMP, grind slurry and contact and produce metal oxide with the metal surface, and remove said metal oxide to reach the effect of grinding through grinding.
A kind of chemical-mechanical grinding device is disclosed in publication number is the one Chinese patent application of CN1471141A.As shown in Figure 1; The grinding unit of existing chemical-mechanical grinding device is the abrasive disk 102 and a wafer handle 104 of rotation automatically; Usually abrasive disk 102 can be designed to a kind of circular slab conveniently to rotate together with the grinding pad 106 that is installed on the abrasive disk 102; The wafer that provides 110 can be caught by wafer handle 104, and the position of wafer handle 104 can be regulated, wafer handle 104 can the application of force on wafer 110; During grinding, wafer handle 104 can confirm that wafer 110 touches grinding pad 106.Above abrasive disk 102, be placed with one and grind slurry supply route 108; The abradant slurry 112 that grinds can be provided; The said slurry 112 that grinds comprises reactant and grinding agent; Reactant is used for reacting with the surfacing that is ground wafer 110 and generates the material that relatively easily grinds off, and grinding agent is used for the mechanical lapping between grinding pad 106 and the wafer 110, in CMP equipment, has an adjuster 114 usually and regulates grinding pad.
But in order to reduce the cost of producing one chip, the size of wafer is increasing, develops into 12 inches from 8 inches, even 18 inches, 24 inches so that bigger.The change of wafer size is given in the CMP technology greatly the homogeneity of grinding wafer has been brought very big difficulty, especially to crystal round fringes grinding partly.With 18 cun wafers is example, in process of lapping, is easy to damage wafer.In addition, the size of the grinding unit of CMP equipment also increases with the increase of wafer size, is unfavorable for miniaturization of devices, and along with the change of wafer size is big, the number of the wafer that grinds in the unit interval is insufficient.
Summary of the invention
The problem that the present invention solves provides a kind of grinding unit that is used for chemical-mechanical grinding device, can reduce the size of abrasive disk, helps realizing miniaturization of devices, it is characterized in that, comprising:
Abrasive disk, said abrasive disk is used to carry the wafer that is provided;
Grinding pad, said grinding pad and abrasive disk are oppositely arranged, and the number of the grinding pad that is oppositely arranged with each abrasive disk is greater than 1, during the grinding, the relative wafer movement that provides of grinding pad;
The grinding pad arm; Said grinding pad arm and abrasive disk are oppositely arranged; Said grinding pad arm one end is fixed, and the other end is fixed said grinding pad, during the grinding; Said grinding pad arm drives said grinding pad with respect to the wafer movement that is provided, and grinding pad contacts with the wafer that is provided during confirming to grind;
Grind slurry supply route, the said slurry supply route that grinds grinds slurry at grinding pad with being ground to supply between the wafer during grinding.
Preferably, the grinding pad arm that is oppositely arranged with same abrasive disk is greater than 1, and each grinding pad arm is fixed a grinding pad.
Preferably, the grinding pad arm that is oppositely arranged with same abrasive disk equals 1, and the number of the grinding pad that each grinding pad arm is fixing is greater than 1.
Preferably, the grinding pad arm also comprises the grinding pad finger, and the number of the grinding pad finger that each grinding pad arm is included is greater than 1, and each grinding pad finger is fixed a grinding pad.
Preferably, said grinding pad arm is through the fixing said grinding pad of the grinding head that is clipped in the on-fixed end.
Preferably, the same time is with the movement locus zero lap of each grinding pad of same wafer relative motion.
Answer route during grinding grinding pad with ground wafer preferably, the grinding pad arm applies a pressure to said wafer, and the size of regulating said pressure through the height of regulating the grinding pad arm.
Preferably, said grinding pad arm is spent less than 360 around the angle of this fixing point rotation.
Preferably, the grinding pad arm is further controlled and is put on the pressure on the wafer.
Preferably, the shape of said abrasive disk is circular, and diameter is greater than the diameter of the wafer that is provided.
Preferably, the shape of said grinding pad is circular.
Preferably, the diameter of said grinding pad is less than or equal to the diameter of the wafer that is provided.
Preferably, the quantity of said abrasive disk is greater than or equal to 1.
Preferably, said grinding unit also comprises the grinding pad finishing member, and said grinding pad finishing member comprises brush and the spray solution and/or the sprinkling of deionized water of scrubbing grinding pad.
Preferably, said grinding unit also comprises grinding pad replacing parts, and said grinding pad is changed parts and comprised dismounting grinding pad subassembly and the grinding pad subassembly is installed.
Correspondingly, the present invention also provides a kind of chemical-mechanical grinding device, and said chemical-mechanical grinding device contains any of grinding unit that above-mentioned each item is used for chemical-mechanical grinding device.
Compared with prior art, the present invention has the following advantages:
First; Among the present invention, the on-fixed end of grinding pad arm is fixed with at least two grinding pads, during the grinding; Each grinding pad is being ground crystal column surface with respect to being ground wafer movement simultaneously; A plurality of grinding pads grind wafer simultaneously, thereby improve grinding efficiency, increase the number that can grind wafer in the unit interval;
The second, the present invention is carried wafer to be ground with abrasive disk, and the size of grinding pad, only needs to increase the size of abrasive disk, thereby helps realizing miniaturization of devices under the situation that wafer size increases less than wafer to be ground;
The 3rd; The arm of grinding pad described in the present invention drives said grinding pad with respect to the wafer movement that is provided; Because the size of grinding pad is less than the size of wafer to be ground, grinding pad can reach each position of wafer to be ground, thereby controls the homogeneity of grinding easily; Especially help grinding, not fragile polished wafer to the crystal round fringes part;
The 4th, grinding pad finishing member that can pass through during the grinding to be provided and grinding pad are changed parts and are realized to the automatic cleaning of grinding pad with to the automatic replacing of grinding pad, thereby improve grinding efficiency, practice thrift cost.
Description of drawings
Fig. 1 is the structural representation of the grinding unit of existing chemical-mechanical grinding device.
Fig. 2 is the structural representation of the grinding unit of the chemical-mechanical grinding device that provides of one embodiment of the present of invention.
Fig. 3 is the grinding pad movement locus sketch map of the chemical-mechanical grinding device that provides of one embodiment of the present of invention.
Fig. 4 is the grinding pad movement locus sketch map of the chemical-mechanical grinding device that provides of an alternative embodiment of the invention.
Fig. 5 is the structural representation of chemical-mechanical grinding device provided by the present invention.
Fig. 6 is the structural representation of the grinding unit of the chemical-mechanical grinding device that provides of an alternative embodiment of the invention.
The specific embodiment
Can know that by background technology the existing grinding unit that is used for chemical-mechanical grinding device comprises the abrasive disk of automatic rotation; Be installed in the grinding pad on the abrasive disk, the size of wafer to be ground is less than the chi of grinding pad; The wafer handle, the wafer to be ground that is provided can be caught by the wafer handle, and wafer surface to be ground is down; Relative with grinding pad; And the position of wafer handle can be regulated, the wafer handle can the application of force on wafer, during grinding; The wafer handle can confirm that wafer touches grinding pad, and the drive wafer moves with respect to grinding pad on the grinding pad surface; Above abrasive disk, be provided with one and grind slurry supply route, the abradant slurry that grinds can be provided.In the rotation process of the relative grinding pad of wafer, grind the action of wafer and can carry out through grinding pad and by the slurry that grinds that gluey tripoli is formed.But along with the increase of wafer size, the size of the size of grinding pad and wafer handle also needs constantly to increase, thereby is unfavorable for miniaturization of devices, and the efficient of grinding is not high enough.
Inventor of the present invention studies the problems referred to above; Creatively propose a kind of grinding unit that is used for chemical-mechanical grinding device in the present invention, said grinding unit carries wafer to be ground with abrasive disk, and said wafer surface to be ground is (being that surface to be ground deviates from abrasive disk) up; With grinding pad arm fixed abrasive pad; And drive grinding pad and rotate with respect to wafer, and guarantee that grinding pad contact with wafer surface to be ground in rotating process, and the quantity of the grinding pad of fixing on the same grinding pad arm is greater than 1; A plurality of grinding pads grind wafer simultaneously, thereby improve grinding efficiency.
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with accompanying drawing and embodiment specific embodiments of the invention.
Set forth detail in the following description so that make much of the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention does not receive the restriction of the following disclosed specific embodiment.Fig. 2 is the structural representation of the grinding unit that is used for chemical-mechanical grinding device that provides of one embodiment of the present of invention, comprising:
Grinding pad 304, said grinding pad 304 is oppositely arranged with abrasive disk 302, and the number of the grinding pad 304 that is oppositely arranged with each abrasive disk 302 is greater than 1, during the grinding, the grinding pad 304 relative wafers that provide 301 motions;
Grind slurry supply route, the said slurry supply route that grinds grinds slurry at grinding pad 304 with being ground to supply between the wafer 301 during grinding.
In the present embodiment; Exemplarily with the grinding unit that is used for chemical-mechanical grinding device three grinding pad arms 305 are arranged, each grinding pad arm 305 is corresponding with a wafer to be ground 301, and one of them grinding pad arm 305 comprises three grinding pads fingers 307; Each grinding pad finger 307 accompanies a grinding head (not shown); Fixing grinding pad 304 on each grinding head, another grinding pad arm 305 comprise two grinding pad fingers 307, and each grinding pad finger 307 accompanies a grinding head (not shown); Fixing grinding pad 304 is an example on each grinding head, such as the mode with vacuum suction grinding pad 304 is adsorbed on the grinding head.In other embodiments of the invention, the number of the grinding pad finger 307 that each grinding pad arm is included can also be to be not equal to other numbers of 2 or 3, such as 5 or 6.The number of grinding pad arm 305 also can be provided with according to arts demand; Such as 4 grinding pad arms 305 being set in order to grind 4 wafers simultaneously; Each grinding pad arm 305 is corresponding with a wafer to be ground 301; The number of can certainly part grinding pad arm fixing grinding pad is greater than 1, and the number of the grinding pad that part grinding pad arm is fixing equals 1.
Said grinding pad arm 305 can be with respect to the wafer movement that is provided, such as the rotation of moving and centering on said fixing point along all directions.In the present embodiment; The grinding pad finger 307 that is fixed on said grinding pad arm 305 is when being synchronized with the movement with said grinding pad arm 305; All right self-movement; The movement locus of each grinding pad finger 307 is controlled by a CD-ROM drive motor, and the movement locus of each grinding pad 304 can be fixed the movement locus of the grinding pad finger 307 of corresponding grinding pad 304 and confirm.Through to controlling the CD-ROM drive motor programming of each grinding pad finger 307, can realize that each grinding pad 304 that is oppositely arranged with same abrasive disk can not arrive the same position of wafer 301 to be ground simultaneously in the process of grinding.The moving region of each grinding pad 304 can be whole wafer 301, also can be the specific region on the wafer 301.Required control be that the same time, the movement locus of each grinding pad 304 does not repeat, and clashes into to avoid each grinding pad 304.
The said slurry supply route 309 that grinds is provided with respect to said grinding pad arm 305; Such as being arranged within the said grinding pad arm 305 or being arranged on outside the said grinding pad arm 305, the said slurry supply route 309 that grinds grinds the slurry (not shown) to grinding pad 304 with being ground to supply between the wafer 301 during grinding.
Grinding pad 304 under the drive of grinding pad arm 305 and grinding head, with respect to the wafer that is provided 301 motions, through regulating the height of grinding pad arm 305, can confirm that this grinding pad 304 contacts with the wafer that is provided 301 between moving period.
In one embodiment of the invention, the speed of each grinding pad 304 relative wafer movements that is fixed in same grinding pad arm 305 is identical, and each grinding pad 304 is identical with pressure between the wafer 301, thereby can realize that wafer 301 surfaces evenly grind everywhere.
In other embodiments of the invention; The speed that is fixed in each grinding pad 304 relative wafer movements of same grinding pad arm 305 can be inequality; Through regulating the pressure between each grinding pad 304 and the wafer 301, can realize the evenly grinding everywhere of wafer 301 surfaces.
Please continue with reference to figure 2, grinding pad 304 is low more with respect to the position of abrasive disk 302, and the elastic deformation of the abrasive disk 302 that is promptly caused by grinding pad 304 is big more, and the pressure that grinding pad 304 puts on the wafer 301 is also big more.During grinding, the contact portion of grinding pad 304 and wafer 301 places the said slurry that grinds that slurry supply route 309 provided that grinds, and the said composition that grinds slurry is relevant with the grinding object.With the abrasive metal is example; The said surface oxidation formation metal oxide that grinds slurry with wafer 301; Impose downward pressure by 304 pairs of wafers 301 of said grinding pad arm 305 control grinding pads; And driving said grinding pad 304 with respect to wafer 301 motions by said grinding pad arm 305, each grinding pad 304 is by corresponding grinding pad finger 307 controls of grinding pad arm 305, so each grinding pad 304 imposes on the pressure of wafer 301; And the track of the motion of each grinding pad 304 is all controlled, and concrete control mode can realize through the drive unit programming to grinding pad arm 305.Can impose on the pressure of wafer 301 through each grinding pad 304 of coordination control, and the movement rate of each grinding pad 304, the track of motion is realized quick, the evenly grinding of crystal column surface.The metal oxide of crystal column surface is mechanically ground off through pressure and with the relative motion of grinding pad.
In addition, in order to improve the homogeneity of grinding, said wafer 301 can also rotation.Said grinding pad 304 is fixed in the on-fixed end of grinding pad arm 305, and can be with 305 rotations of grinding pad arm, and this grinding pad 304 contacted with the wafer that is provided 301 during grinding pad arm 305 was confirmed to grind.
In the present embodiment, combine through rotating shaft 303 between three abrasive disks 302, down, three abrasive disks 302 can be worked simultaneously in working order; Can not work simultaneously yet, such as, have only an abrasive disk in running order; And two other abrasive disk is in idle condition, and correspondingly, three abrasive disks 302 can rotate synchronously; Also can asynchronously rotate, can also part rotate, part stops.Three abrasive disks 302 are respectively by different CD-ROM drive motor control, and each motor can be programmed separately, and the user can programme according to the needs of technology.
In the specific embodiment, for conserve space, the shape of said abrasive disk 302 can be designed as circle, and the diameter of said abrasive disk 302 is greater than the diameter of wafer to be ground 301.The diameter of said abrasive disk 302 greater than the benefit of the diameter of wafer to be ground 301 is; Wafer 301 to be ground can place on the abrasive disk 302 fully, and is adsorbed on the said abrasive disk 302, such as vacuum suction; Thereby in the process of grinding; Abrasive disk 302 can provide uniform holding power to wafer to be ground 301, avoids when grinding pad 304 rotates on wafer 301 surfaces, and wafer is damaged because of unbalance stress.
Continuation is with reference to figure 2, and in a preferred embodiment of the invention, the said grinding unit that is used for chemical-mechanical grinding device also comprises, grinding pad finishing member 306, and said grinding pad finishing member 306 is used to clean said grinding pad 304.
In the present embodiment, grinding pad arm 305 can also be controlled grinding pad 304 and get into grinding pad finishing member 306, realizes the automatic cleaning of grinding pad 304.
In existing chemical-mechanical grinding device; The cleaning method of said grinding pad 304 adopts artificial method of cleaning more, promptly rule of thumb, and at set intervals; By the Facilities Engineer grinding pad 304 is cleaned; But the cleaning of grinding pad 304 is by software control, in working order down in the present embodiment; (this time period can be passed through software set) at set intervals; Grinding pad arm 305 rotation one is enough to grinding pad 304 is placed the angle of grinding pad finishing member 306, and the effect of grinding pad finishing member 306 is that the accessory substance that produces some process of lapping takes away, and grinding pad finishing member 306 comprises brush and the spray solution and/or the sprinkling of deionized water of scrubbing grinding pad.Said brush surface has more fixing hard particles, and these particles can be brushed grinding pad 304, and so that the byproducts on grinding pad 304 surfaces are partly brushed from grinding pad 304, said sprinkling can spray solution and/deionized water, and grinding pad is washed.
For the uniformity that realizes grinding, during grinding, be rinsed if be fixed in a grinding pad 304 of same grinding pad arm 305, other grinding pads 304 also carry out identical flushing to be handled.
Continuation is with reference to figure 2, and in a preferred embodiment of the invention, the said grinding unit that is used for chemical-mechanical grinding device comprises that also grinding pad is changed parts 400, and said grinding pad is changed parts 400 and is used to change grinding pad 304.
Said grinding pad is changed parts 400 and is comprised dismounting grinding pad subassembly and the grinding pad subassembly is installed.
In working order down; (this time period can be passed through software set) at set intervals; 305 rotations one of grinding pad arm are enough to place grinding pad to change the angle of the dismounting grinding pad subassembly of parts 400 grinding pad 304; Grinding pad 304 is removed at dismounting grinding pad subassembly, such as the glue that dissolves bonding grinding pad 304 and grinding pad arm 305 through solution, thereby grinding pad 304 is removed; Grinding pad arm 305 rotates angle entering installation grinding pad subassembly more then, and grinding pad 304 is installed.
Likewise, for the uniformity that realizes grinding, during grinding, be replaced if be fixed in a grinding pad 304 of same grinding pad arm 305, other grinding pads 304 also carry out identical replacing to be handled.
Fig. 3 is the grinding pad 304 movement locus sketch mapes of the chemical-mechanical grinding device that provides of one embodiment of the present of invention.In the present embodiment; 3 grinding pads 304 have been fixed on the same grinding pad arm 305; Each grinding pad 304 along straight path shown in Figure 3 with identical speed at wafer 301 surperficial back and forth movements; Said wafer 301 places abrasive disk 302 surfaces, and the pressure that each grinding pad 304 is applied on the wafer 301 is identical.During the grinding, wafer 301 rotations.
Fig. 4 is the grinding pad 304 movement locus sketch mapes of the chemical-mechanical grinding device that provides of an alternative embodiment of the invention.In the present embodiment; 2 grinding pads 304 have been fixed on the same grinding pad arm 305; Each grinding pad 304 moves in a circle on wafer 301 surfaces with identical speed along circular trace shown in Figure 4; The pressure that each grinding pad 304 puts on wafer 301 is identical, and during grinding, wafer 301 rotations.
During grinding; Grinding slurry supply route 309 provides to wafer 301 and grinds slurry; Whole wafer 301 surfaces evenly are coated with one deck and grind slurry, because a plurality of grinding pad 304 grinds wafer 301 simultaneously, and the pressure that each grinding pad 304 puts on wafer 301 is identical; Each grinding pad 304 is identical with respect to the movement rate of wafer 301, so grind evenly and fast.Improved the efficient of grinding.
The present invention also provides a kind of chemical-mechanical grinding device, and said chemical-mechanical grinding device contains any of grinding unit that above-mentioned each item is used for chemical-mechanical grinding device.
As shown in Figure 5, chemical-mechanical grinding device provided by the present invention also comprises the cleaning unit 50 of the wafer after being used to supply the feeding unit 20 of wafer and being used to clean grinding.
Feeding unit 20 is sent wafer to be ground 301 into grinding unit 30, and said wafer to be ground is placed abrasive disk 302.Driving grinding pad 304 by grinding pad arm 305 and grinding head moves with respect to wafer 301; In addition; Wafer 301 can with abrasive disk 302 asynchronous or synchronous rotations; In relative wafers 301 motions of grinding pad 304, between grinding pad 304 and wafer 301, supply and grind slurry by grinding slurry supply route 309, grind.
During this time, grinding pad finishing member 306 is used to clean said grinding pad 304.
Grinding pad is changed parts 400 and is used to change grinding pad 304.
Fig. 6 is the structural representation of the grinding unit that is used for chemical-mechanical grinding device that provides of an alternative embodiment of the invention, comprising:
Grinding pad 304, said grinding pad 304 is oppositely arranged with abrasive disk 302, and the number of the grinding pad 304 that is oppositely arranged with each abrasive disk 302 is greater than 1, during the grinding, the grinding pad 304 relative wafers that provide 301 motions;
Grinding pad arm 400; Said grinding pad arm 400 is oppositely arranged with abrasive disk 302, and the quantity of the grinding pad arm 400 that is oppositely arranged with each abrasive disk 302 is greater than 1, and said grinding pad arm 400 1 ends are fixed; Said grinding pad arm 400 other end fixed abrasive pads 304; During the grinding, said grinding pad arm 400 drives said grinding pad 304 with respect to the wafer that is provided 301 motions, and grinding pad 304 contacts with the wafer that is provided 301 during confirming to grind;
Grind slurry supply route, the said slurry supply route that grinds grinds slurry at grinding pad with being ground to supply between the wafer during grinding.
In the present embodiment; The quantity of the grinding pad arm 400 that is oppositely arranged with each abrasive disk 302 is greater than 1; Such as being 2 or 3, the stiff end of the grinding pad arm 400 that is oppositely arranged with same abrasive disk 302 can be fixed in same point, also can be fixed in difference; The movement locus of each grinding pad arm 400 can be controlled separately, thereby is convenient to realize the control to the movement locus of the grinding pad 304 that is fixed in said grinding pad arm 400.
In the present embodiment, the grinding pad 304 that is fixed in each the grinding pad arm 400 that is oppositely arranged with same abrasive disk 302 can not be ground to the same point of the wafer that provides 301 at one time, that is to say that grinding pad 304 can not clash into during grinding.Miscellaneous part can be with reference to first embodiment of the present invention in the present embodiment.Compare with the first embodiment of the present invention, because each grinding pad is fixed in different polishing pad arm, so can control the movement locus of each grinding pad more neatly, still first embodiment more helps realizing miniaturization of devices in the present embodiment.
Compared with prior art, the present invention has the following advantages:
First; Among the present invention, the on-fixed end of grinding pad arm is fixed with at least two grinding pads, during the grinding; Each grinding pad is being ground crystal column surface with respect to being ground wafer movement simultaneously; A plurality of grinding pads grind wafer simultaneously, thereby improve grinding efficiency, increase the number of the wafer that grinds in the unit interval;
The second, the present invention is carried wafer to be ground with abrasive disk, and the size of grinding pad, only needs to increase the size of abrasive disk, thereby helps realizing miniaturization of devices under the situation that wafer size increases less than wafer to be ground;
The 3rd; The arm of grinding pad described in the present invention drives said grinding pad with respect to the wafer movement that is provided; Because the size of grinding pad is less than the size of wafer to be ground, grinding pad can reach each position of wafer to be ground, thereby controls the homogeneity of grinding easily; Especially help grinding, not fragile polished wafer to the crystal round fringes part;
The 4th, grinding pad finishing member that can pass through during the grinding to be provided and grinding pad are changed parts and are realized to the automatic cleaning of wafer with to the automatic replacing of grinding pad, thereby improve grinding efficiency, practice thrift cost.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection domain of technical scheme of the present invention according to technical spirit of the present invention.
Claims (15)
1. a grinding unit that is used for chemical-mechanical grinding device is characterized in that, comprising:
Abrasive disk, said abrasive disk is used to carry the wafer that is provided;
Grinding pad, said grinding pad and abrasive disk are oppositely arranged, and the number of the grinding pad that is oppositely arranged with each abrasive disk is greater than 1, during the grinding, the relative wafer movement that provides of grinding pad;
The grinding pad arm; Said grinding pad arm and abrasive disk are oppositely arranged; Said grinding pad arm one end is fixed, and the other end is fixed said grinding pad, during the grinding; Said grinding pad arm drives said grinding pad with respect to the wafer movement that is provided, and grinding pad contacts with the wafer that is provided during confirming to grind;
Grind slurry supply route, the said slurry supply route that grinds grinds slurry at grinding pad with being ground to supply between the wafer during grinding.
2. according to the grinding unit that is used for chemical-mechanical grinding device of claim 1, it is characterized in that the number of the grinding pad arm that is oppositely arranged with same abrasive disk is greater than 1, each grinding pad arm is fixed a grinding pad.
3. according to the grinding unit that is used for chemical-mechanical grinding device of claim 1, it is characterized in that the number of the grinding pad arm that is oppositely arranged with same abrasive disk is 1, the number of the grinding pad that each grinding pad arm is fixing is greater than 1.
4. according to the grinding unit that is used for chemical-mechanical grinding device of claim 3; It is characterized in that; The grinding pad arm also comprises the grinding pad finger, and the number of the grinding pad finger that each grinding pad arm is included is greater than 1, and each grinding pad finger is fixed a grinding pad.
5. according to any one of the grinding unit that is used for chemical-mechanical grinding device of claim 2 to 4, it is characterized in that said grinding pad arm is through the fixing said grinding pad of the grinding head that is clipped in the on-fixed end.
6. according to the grinding unit that is used for chemical-mechanical grinding device of claim 1, it is characterized in that the same time is with the movement locus zero lap of each grinding pad of same wafer relative motion.
7. according to the grinding unit that is used for chemical-mechanical grinding device of claim 1, it is characterized in that the grinding pad arm applies a pressure to said wafer, and the size of regulating said pressure through the height of regulating the grinding pad arm.
8. according to the grinding unit that is used for chemical-mechanical grinding device of claim 1, it is characterized in that said grinding pad arm is spent less than 360 around the angle of this fixing point rotation.
9. according to the grinding unit that is used for chemical-mechanical grinding device of claim 1, it is characterized in that the shape of said abrasive disk is circular, and diameter is greater than the diameter of the wafer that is provided.
10. according to the grinding unit that is used for chemical-mechanical grinding device of claim 1, it is characterized in that the shape of said grinding pad is circular or polygon.
11. the grinding unit that is used for chemical-mechanical grinding device according to claim 10 is characterized in that the diameter of said grinding pad is less than or equal to the diameter of the wafer that is provided.
12. the grinding unit that is used for chemical-mechanical grinding device according to claim 1 is characterized in that the quantity of said abrasive disk is greater than or equal to 1.
13. the grinding unit that is used for chemical-mechanical grinding device according to claim 1; It is characterized in that; Said grinding unit also comprises the grinding pad finishing member, and said grinding pad finishing member comprises brush and the spray solution and/or the sprinkling of deionized water of scrubbing grinding pad.
14. the grinding unit that is used for chemical-mechanical grinding device according to claim 1 is characterized in that, said grinding unit also comprises grinding pad replacing parts, and said grinding pad is changed parts and comprised dismounting grinding pad subassembly and the grinding pad subassembly is installed.
15. a chemical-mechanical grinding device, said chemical-mechanical grinding device contain any of grinding unit that above-mentioned each item is used for chemical-mechanical grinding device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106166784A CN102528637A (en) | 2010-12-30 | 2010-12-30 | Chemical mechanical polishing equipment and polishing unit thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106166784A CN102528637A (en) | 2010-12-30 | 2010-12-30 | Chemical mechanical polishing equipment and polishing unit thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102528637A true CN102528637A (en) | 2012-07-04 |
Family
ID=46337327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010106166784A Pending CN102528637A (en) | 2010-12-30 | 2010-12-30 | Chemical mechanical polishing equipment and polishing unit thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102528637A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115805520A (en) * | 2022-12-26 | 2023-03-17 | 西安奕斯伟材料科技有限公司 | Polishing apparatus and polishing pad removing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6106369A (en) * | 1997-11-11 | 2000-08-22 | Tokyo Electron Limited | Polishing system |
| US20020132566A1 (en) * | 2001-03-15 | 2002-09-19 | Jeong In Kwon | System and method for chemical mechanical polishing using multiple small polishing pads |
| US20080242199A1 (en) * | 2007-03-30 | 2008-10-02 | Elpida Memory, Inc. | Polishing apparatus and method of reconditioning polishing pad |
| CN101456150A (en) * | 2007-12-11 | 2009-06-17 | 上海华虹Nec电子有限公司 | Chemical mechanical polishing method |
| TW200946280A (en) * | 2008-02-14 | 2009-11-16 | Ebara Corp | Method and apparatus for polishing object |
-
2010
- 2010-12-30 CN CN2010106166784A patent/CN102528637A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6106369A (en) * | 1997-11-11 | 2000-08-22 | Tokyo Electron Limited | Polishing system |
| US20020132566A1 (en) * | 2001-03-15 | 2002-09-19 | Jeong In Kwon | System and method for chemical mechanical polishing using multiple small polishing pads |
| US20080242199A1 (en) * | 2007-03-30 | 2008-10-02 | Elpida Memory, Inc. | Polishing apparatus and method of reconditioning polishing pad |
| CN101456150A (en) * | 2007-12-11 | 2009-06-17 | 上海华虹Nec电子有限公司 | Chemical mechanical polishing method |
| TW200946280A (en) * | 2008-02-14 | 2009-11-16 | Ebara Corp | Method and apparatus for polishing object |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115805520A (en) * | 2022-12-26 | 2023-03-17 | 西安奕斯伟材料科技有限公司 | Polishing apparatus and polishing pad removing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102528643A (en) | Chemical mechanical polishing equipment and polishing unit thereof | |
| KR100440417B1 (en) | Devices that integrate pad conditioners and wafer carriers for chemical-mechanical polishing applications | |
| US6343978B1 (en) | Method and apparatus for polishing workpiece | |
| US6413156B1 (en) | Method and apparatus for polishing workpiece | |
| KR19990062699A (en) | Polishing machine to planarize the substrate surface | |
| US20150314417A1 (en) | Polishing pad conditioning system including suction | |
| KR102229920B1 (en) | Systems, methods and apparatus for post-chemical mechanical planarization substrate buff pre-cleaning | |
| US20130210323A1 (en) | CMP Pad Cleaning Apparatus | |
| US20150079885A1 (en) | Device for cleaning fixed abrasives polishing pad | |
| CN102479669A (en) | Wafer brush cleaning device and wafer brush cleaning method | |
| CN102398212A (en) | Chemical mechanical polishing equipment | |
| US20110312247A1 (en) | Apparatus for Polishing Rear Surface of Substrate, System for Polishing Rear Surface of Substrate, Method for Polishing Rear Surface of Substrate and Recording Medium Having Program for Polishing Rear Surface of Substrate | |
| CN108115553B (en) | Chemical-mechanical polisher and cmp method | |
| CN102779726A (en) | Wafer cleaning method | |
| CN113500516A (en) | Method and system for cleaning grinding device | |
| WO2015182316A1 (en) | Substrate-processing device | |
| CN102528637A (en) | Chemical mechanical polishing equipment and polishing unit thereof | |
| CN111383955A (en) | Roller for cleaning wafer and cleaning device with roller | |
| JP2016074074A (en) | Polishing device and processing method | |
| JP2015044250A (en) | Polishing method | |
| CN208298795U (en) | Base plate processing system | |
| JP2003225862A (en) | Polishing device | |
| US20220184771A1 (en) | Polishing system apparatus and methods for defect reduction at a substrate edge | |
| CN220094222U (en) | Wafer grinding device | |
| KR20070112647A (en) | Chemical mechanical polishing apparatus and method for cleaning polishing-pad using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121109 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20121109 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120704 |