CN102527662A - Method for cleaning quartz crystal elements - Google Patents
Method for cleaning quartz crystal elements Download PDFInfo
- Publication number
- CN102527662A CN102527662A CN2010106009853A CN201010600985A CN102527662A CN 102527662 A CN102527662 A CN 102527662A CN 2010106009853 A CN2010106009853 A CN 2010106009853A CN 201010600985 A CN201010600985 A CN 201010600985A CN 102527662 A CN102527662 A CN 102527662A
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- Prior art keywords
- quartz crystal
- cleaning
- crystal elements
- housed
- prime
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The invention relates to the field of production of quartz crystal resonators, in particular to a method for cleaning quartz crystal elements, which includes: placing two beakers containing dichloromethane solution and a beaker containing trichloroethane solution into an ultrasonic cleaning machine, placing a cleaning rack holding quartz crystal elements into the beaker containing trichloroethane solution, cleaning the quartz crystal elements by the ultrasonic cleaning machine for three minutes; placing the cleaning rack holding the quartz crystal elements into the two beakers containing dichloromethane solution sequentially and cleaning the quartz crystal elements by the ultrasonic cleaning machine for three minutes respectively; placing the cleaning rack holding the quartz crystal elements into the beakers containing dichloromethane solution and cleaning the same again after being cleaned by the ultrasonic cleaning machine, and finally baking the quartz crystal elements into an oven with the temperature set to be 77 DEG C for 30 minutes. The method for cleaning the quartz crystal elements is simple, enables the quartz crystal elements to be cleaned clearly, saves labor and reduces production cost.
Description
Technical field
The present invention relates to the quartz-crystal resonator production field, is a kind of cleaning method of quartz crystal sub-prime.
Background technology
Quartz-crystal resonator be not called sub-prime before the encapsulation, and sub-prime must clean before frequency modulation and encapsulation.Because former cleaning method is complicated, clean untotally, the wasting manpower and material resources has increased production cost.
Summary of the invention
The objective of the invention is to provide a kind of cleaning method of new quartz crystal sub-prime.
Technical scheme of the present invention is: two beaker and beakers that trichloroethanes solution is housed that dichloromethane solution is housed are put into supersonic wave cleaning machine; Put into the beaker that trichloroethanes solution is housed to the rack for cleaning that the quartz crystal sub-prime is housed earlier, cleaned three minutes with supersonic wave cleaning machine; The rack for cleaning that the quartz crystal sub-prime will be housed is again put into two beakers that dichloromethane solution is housed respectively, cleans three minutes with supersonic wave cleaning machine at every turn; Supersonic wave cleaning machine is put into the beaker that dichloromethane solution is housed with the rack for cleaning that the quartz crystal sub-prime is housed and is cleaned one time again after cleaning and finishing, and puts into baking box to the quartz crystal sub-prime at last, and oven temperature is set to 77 degree Celsius, toasts 30 minutes.
Owing to adopted technique scheme, cleaning method is simple, cleans up, and has practiced thrift manpower, has reduced production cost.
The specific embodiment
Below in conjunction with embodiment the present invention is further described.
Two beaker and beakers that trichloroethanes solution is housed that dichloromethane solution is housed are put into supersonic wave cleaning machine; The quartz crystal sub-prime is put into rack for cleaning; Put into the beaker that trichloroethanes solution is housed to the rack for cleaning that the quartz crystal sub-prime is housed earlier, cleaned three minutes with supersonic wave cleaning machine; The rack for cleaning that the quartz crystal sub-prime will be housed is again put into two beakers that dichloromethane solution is housed respectively, cleans three minutes with supersonic wave cleaning machine at every turn; Supersonic wave cleaning machine is put into the beaker that dichloromethane solution is housed with the rack for cleaning that the quartz crystal sub-prime is housed and is cleaned one time again after cleaning and finishing, and puts into baking box to the quartz crystal sub-prime at last, and oven temperature is set to 77 degree Celsius, high-temperature baking 30 minutes.Accomplished the cleaning of quartz crystal sub-prime like this.
Claims (1)
1. the cleaning method of a quartz crystal sub-prime; It is characterized in that two beaker and beakers that trichloroethanes solution is housed that dichloromethane solution is housed are put into supersonic wave cleaning machine; Put into the beaker that trichloroethanes solution is housed to the rack for cleaning that the quartz crystal sub-prime is housed earlier, cleaned three minutes with supersonic wave cleaning machine; The rack for cleaning that the quartz crystal sub-prime will be housed is again put into two beakers that dichloromethane solution is housed respectively, cleans three minutes with supersonic wave cleaning machine at every turn; Supersonic wave cleaning machine is put into the beaker that dichloromethane solution is housed with the rack for cleaning that the quartz crystal sub-prime is housed and is cleaned one time again after cleaning and finishing, and puts into baking box to the quartz crystal sub-prime at last, and oven temperature is set to 77 degree Celsius, toasts 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106009853A CN102527662A (en) | 2010-12-16 | 2010-12-16 | Method for cleaning quartz crystal elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106009853A CN102527662A (en) | 2010-12-16 | 2010-12-16 | Method for cleaning quartz crystal elements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102527662A true CN102527662A (en) | 2012-07-04 |
Family
ID=46336390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010106009853A Pending CN102527662A (en) | 2010-12-16 | 2010-12-16 | Method for cleaning quartz crystal elements |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102527662A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105344647A (en) * | 2015-10-10 | 2016-02-24 | 南京信息工程大学 | Cleaning method for ice core sampling membrane |
| CN107171652A (en) * | 2017-05-24 | 2017-09-15 | 广东惠伦晶体科技股份有限公司 | A kind of change stone roller technique of quartz wafer |
| CN108499966A (en) * | 2018-03-27 | 2018-09-07 | 中国工程物理研究院激光聚变研究中心 | The cleaning method of KDP crystal |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4814145B1 (en) * | 1968-10-28 | 1973-05-04 | ||
| US4514232A (en) * | 1982-12-15 | 1985-04-30 | International Business Machines Corporation | Process for stripping silicon oil base thermal grease |
| JPH07235519A (en) * | 1994-02-24 | 1995-09-05 | Furukawa Electric Co Ltd:The | Method of manufacturing compound semiconductor wafer |
| JPH0814145B2 (en) * | 1990-08-14 | 1996-02-14 | 新日本製鐵株式会社 | Dome structure frame |
| CN1124285A (en) * | 1995-11-23 | 1996-06-12 | 山东大学 | Cleaning agent for semiconductor industry |
| JP2004082018A (en) * | 2002-08-28 | 2004-03-18 | Tdk Corp | Washing drying method for chip electronic component and equipment therefor |
| JP2006249114A (en) * | 2005-03-08 | 2006-09-21 | Japan Energy Corp | Cleaning agent composition and cleaning method |
| CN101695696A (en) * | 2009-09-23 | 2010-04-21 | 镇江市港南电子有限公司 | Method for cleaning silicon chip |
| CN101700520A (en) * | 2009-12-03 | 2010-05-05 | 杭州海纳半导体有限公司 | Washing method of monocrystalline/polycrystalline silicon chips |
-
2010
- 2010-12-16 CN CN2010106009853A patent/CN102527662A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4814145B1 (en) * | 1968-10-28 | 1973-05-04 | ||
| US4514232A (en) * | 1982-12-15 | 1985-04-30 | International Business Machines Corporation | Process for stripping silicon oil base thermal grease |
| JPH0814145B2 (en) * | 1990-08-14 | 1996-02-14 | 新日本製鐵株式会社 | Dome structure frame |
| JPH07235519A (en) * | 1994-02-24 | 1995-09-05 | Furukawa Electric Co Ltd:The | Method of manufacturing compound semiconductor wafer |
| CN1124285A (en) * | 1995-11-23 | 1996-06-12 | 山东大学 | Cleaning agent for semiconductor industry |
| JP2004082018A (en) * | 2002-08-28 | 2004-03-18 | Tdk Corp | Washing drying method for chip electronic component and equipment therefor |
| JP2006249114A (en) * | 2005-03-08 | 2006-09-21 | Japan Energy Corp | Cleaning agent composition and cleaning method |
| CN101695696A (en) * | 2009-09-23 | 2010-04-21 | 镇江市港南电子有限公司 | Method for cleaning silicon chip |
| CN101700520A (en) * | 2009-12-03 | 2010-05-05 | 杭州海纳半导体有限公司 | Washing method of monocrystalline/polycrystalline silicon chips |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105344647A (en) * | 2015-10-10 | 2016-02-24 | 南京信息工程大学 | Cleaning method for ice core sampling membrane |
| CN105344647B (en) * | 2015-10-10 | 2017-09-19 | 南京信息工程大学 | A kind of cleaning method of ice-nucleus sampling diaphragm |
| CN107171652A (en) * | 2017-05-24 | 2017-09-15 | 广东惠伦晶体科技股份有限公司 | A kind of change stone roller technique of quartz wafer |
| CN108499966A (en) * | 2018-03-27 | 2018-09-07 | 中国工程物理研究院激光聚变研究中心 | The cleaning method of KDP crystal |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 441300 Zengdou Economic Development Zone, Suizhou District, Hubei (Hubei Crystal Electronic Technology Co., Ltd.) Applicant after: Hubei TKD Electronic Technology Co., Ltd. Address before: 441300 Zengdou Economic Development Zone, Suizhou District, Hubei (Hubei Crystal Electronic Technology Co., Ltd.) Applicant before: Hubei Taijing Electronic Technology Co., Ltd. |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120704 |