CN102522317A - Anode in field emission light source and field emission light source including the same - Google Patents
Anode in field emission light source and field emission light source including the same Download PDFInfo
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- CN102522317A CN102522317A CN2011104026257A CN201110402625A CN102522317A CN 102522317 A CN102522317 A CN 102522317A CN 2011104026257 A CN2011104026257 A CN 2011104026257A CN 201110402625 A CN201110402625 A CN 201110402625A CN 102522317 A CN102522317 A CN 102522317A
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- Prior art keywords
- light source
- field emission
- emission light
- layer
- conductive layer
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000005136 cathodoluminescence Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 206010016326 Feeling cold Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/06—Lamps with luminescent screen excited by the ray or stream
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Discharge Lamps And Accessories Thereof (AREA)
Abstract
An anode (1) in a field emission light source (15) is disclosed. The anode (1) comprises a conductive layer (3) and a light-emitting layer (5) which emits light when excited by electron bombardment (7) caused by a potential difference (9) between the conductive layer (3) and a cathode (11). Is mainly characterized in that the light-emitting layer (5) is arranged between the electrically conductive layer (3) and the cathode (11), and in that the electrically conductive layer (3) is a transparent electrically conductive layer (3). Further, a field emission light source comprising such an anode (1) is disclosed.
Description
It is the dividing an application for the patent application of " a kind of anode in the field emission light source and the field emission light source that comprises this anode " that 200580003494.8 (international application no is PCT/SE2005/000106), the applying date be on January 28th, 2005, denomination of invention that the application is based on application number.
Technical field
According to first kind of situation, the present invention relates to a kind of anode in the field emission light source.
According to second kind of situation, the present invention relates to a kind of field emission light source that comprises this anode.
Background technology
At US 5; Disclose a kind of light source in 877,588, this light source comprises the container of a kind of vacuum with perisporium that at least a portion is made up of outer glassy layer; On the glassy layer, cover its at least one critical piece with one deck fluorescent material that forms luminescent layer outside in the inboard.Conductive layer constitutes anode.From at the field-transmitting cathode of internal tank be configured in negative electrode and the modulator electrode between the anode or the grid that are used to emitting electrons and form electric field and come the fluorescence excitation material layer luminous with electron bombard.Field-transmitting cathode comprises and is more fibrous field emission bodies and the pedestal by at least two fastening longitudinal extension heart yearns that form of lead is housed between fiber.
At US 6; 008; A kind of light source is provided in 575, and this light source comprises the container of a kind of vacuum with perisporium, forms at least a portion perisporium by on its at least one critical piece, be coated with phosphor layer that forms luminescent layer and the outer glassy layer that forms the conductive layer of anode in the inboard.Come the fluorescence excitation material layer luminous from the field-transmitting cathode that is positioned at internal tank with electron bombard.Modulator electrode is configured in and is used to be established as between the negative electrode and anode of the necessary electric field of emitting electrons.Phosphor layer is a kind of luminescent layer of visible emitting in the time of electron bombard.Preferably use reflective electric conducting material, for example aluminium is made anode.
In such technology, more than disclosed field emission light source many limitation are arranged.For example, the above type field emission light source possibly cause in electric conducting material owing to absorb the energy loss that causes.The risk that also has electric charge to gather.In addition, the manufacturing of the above-mentioned type light source is the quite complicated thing of part.
Summary of the invention
The main purpose of two kinds of situations of the present invention is to alleviate some shortcomings at technical elements.
According to first kind of situation of the present invention, be disclosed in a kind of anode in the field emission light source.This anode comprises conductive layer and potential difference causes between receiving by conductive layer and negative electrode electron bombard and luminous luminescent layer when exciting.The main feature of this situation is that luminescent layer is configured between conductive layer and the negative electrode, is that conductive layer is a kind of transparency conducting layer and is that the electrically conducting transparent layer thickness is 100～1000nm.
Because electronics need pass through transparency conducting layer before their stimulated luminescence layers, so transparency conducting layer provides the more chance that excites of polyelectron of quilt in the luminescent layer.Transparency conducting layer is transparent to be a necessary condition, because under reverse situation, have no light can see through it.The electricity of transparency conducting layer is led and is directly proportional with the thickness in the bulk conductivity situation.Yet; Electrical conduction mechanism experience is converted to and seepage flow type when by the crystallite of weak coupling forming transparency conducting layer littler at average thickness and is converted at last at thickness enough greatly and the body conductivity of transparency conducting layer when becoming continual film from the type of insulation of being made up of very hour the crystallite that separates at the transparency conducting layer average thickness.Body conductivity occurs when average thickness 100nm is above usually.Correlation is a transparency along with thickness increases and reduces between the thickness of conductive layer and the transparency.When thickness increased above 1000nm, transparency became and makes a large amount of light can not see through conductive layer.According to these research, thickness should be below 1000nm.
Also should consider aspect definite best thickness of thin layer as thermal capacity and so on factor.
In a specific embodiment, the direct and transparency conducting layer adjacency of luminescent layer.The advantage of the energy loss of further minimizing electronics so just is provided.
In another specific embodiment, the electrically conducting transparent layer thickness is 300～700nm, more preferably 400～600nm and 450～550nm more preferably again.For fabulous production economy and performance characteristic, good relationship just appears between conductivity and transparency when the electrically conducting transparent layer thickness is approximately 500nm.
In another specific embodiment, potential difference is 4～12KV, and 5～11KV more preferably.Potential difference in this scope provides to form and is suitable for exciting the advantage of the radiative electron bombard of layer of feeling cold.
In another specific embodiment, transparency conducting layer is following at least a: indium tin oxide (ITO) and zinc oxide (ZnO).The advantage that these materials provide is that they are transparent and suitable electric conductivity is provided.
In another specific embodiment, anode further comprises the fixedly a kind of closed transparent configuration of conductive layer.
In another specific embodiment, transparent configuration is a kind of special glassware.
According to second kind of situation of the present invention, openly comprise a kind of field emission light source according to the anode of first kind of situation.
From the viewpoint that the present invention can be implemented, many interchangeable method of manufacturing technology are applicable.For example, through use injecting and incline process, spraying method, spin coated or printing and can make anode.
Distinguish now switch in two kinds of physical principles, cathodoluminescence just and the luminescence generated by light of field emission light source, be vital.The physical principle of the luminescence process that relates in the present invention later is cathodoluminescence, wherein produces visible light through the direct collision of duplet fluorescent material.From another point of view, luminescence generated by light relates to based on a kind of fluorescent light source of coming the fluorescence excitation material through molecular discharge.In fluorescent light source, produce plasma from atom enclosed type transparent configuration bulb or molecule steam.Luminous through exciting the fluorescent material that covers bulb internal surface to cause with plasma.
Description of drawings
In Fig. 1, an embodiment of the anode 1 in field emission light source according to the present invention is disclosed.
In Fig. 2, a specific embodiment of the field emission light source that comprises this anode is disclosed.
In Fig. 3, expression is disclosed based on the curve chart that concerns between the conductive layer conductivity of experiment measuring and the average thickness.
In Fig. 4, expression is disclosed based on the curve chart that concerns between the conductive layer transparency of experiment measuring and the average thickness.
Embodiment
In Fig. 1, an embodiment of the anode 1 in field emission light source according to the present invention is disclosed.Anode 1 comprises conductive layer 3 and luminous luminescent layer 5 when exciting receiving the electron bombard 7 that potential difference 9 causes between conductive layer 3 and the negative electrode 11.Luminescent layer 5 is configured between conductive layer 3 and the negative electrode 11.Conductive layer 3 is a kind of transparency conducting layers 3.Luminescent layer 5 directly is adjacent to transparency conducting layer 3.The thickness of transparency conducting layer 3 is 100～1000nm, more preferably 400～600nm and 450～550nm more preferably again.Potential difference 9, Δ V are 4～12KV, and 5～11KV more preferably.
In a specific embodiment transparency conducting layer be indium tin oxide (ITO) and in another specific embodiment transparency conducting layer be zinc oxide (ZnO).
In this specific embodiment, anode 1 comprises fixedly a kind of enclosed type transparent configuration 13 of conductive layer 3.In this specific embodiment, make transparent configuration 13 with glass.In another specific embodiment, glass structure has dimming behavior.
In Fig. 2, a specific embodiment of the field emission light source 15 that comprises anode 1 is disclosed.In Fig. 2, the embodiment of the anode 1 in field emission light source according to the present invention is disclosed.Anode 1 comprises conductive layer 3 and luminous luminescent layer 5 when exciting receiving the electron bombard that potential difference 9 causes between conductive layer 3 and the negative electrode 11.Luminescent layer 5 is configured between conductive layer 3 and the negative electrode 11.Conductive layer 3 is a kind of transparency conducting layers 3.Luminescent layer 5 directly is adjacent to transparency conducting layer 3.
As can in Fig. 3, being seen, some experiments of being implemented show that conductivity S increases with the average thickness of conductive layer 3.
Further, as can in Fig. 4, seeing, some experiments of being implemented show that transparency reduces with the average thickness increase of conductive layer 3.
Through the curve among arrangement Fig. 3 and Fig. 4, from curve each other, can draw best conductive layer 3 thickness, be approximately 500nm.When 500nm thickness, keep transparency greater than 95%.According to consideration, find that this thickness is enough to satisfy some purposes relevant with the present invention about weighing between conductivity, transparency and operating time in application conductive layer 3 processes on enclosed type transparent configuration 13 and the economic aspect.
Measure and the experiment description
Make a kind of ITO sol gel solution deposition in the glass shell inner surface, just process enclosed type transparent configuration 13 basically, succeeded by oven dry at high temperature.So just form the ITO droplet.During repeating this operation in a looping fashion, each circulation, the ITO droplet just more and more mutually combines and along with therefore conductive layer 3 average thicknesss increase, conductivity also increases.In order to monitor from after each circulation, measuring conductivity to the seepage flow conduction with to some transformations (as shown in Figure 3) of body conduction near insulating.The conductivity that after each follow-up circulation, is increased reflects the connection of a kind of enhancing between droplet, and sizable increment reflects that bulk conductivity forms aspect conductivity.More a step, a kind of darkness tester is used for monitoring after each circulation and is converted to opaque state (as shown in Figure 4) from pellucidity.
Claims (7)
1. a field emission light source (15) comprises anode (1) and negative electrode (11), and wherein, this anode (1) comprising:
-enclosed type transparent configuration (13);
-conductive layer (3);
-luminescent layer (5), the electron bombard (7) that causes in the potential difference (9) that receives between conductive layer (3) and the negative electrode (11) and luminous when exciting;
It is characterized in that:
-luminescent layer (5) is configured between conductive layer (3) and the negative electrode (11);
-conductive layer (3) is transparency conducting layer (3),
-conductive layer (3) is fixed on the enclosed type transparent configuration (13);
The thickness of-transparency conducting layer (3) is 450～550nm; And
-potential difference (9) is 4～12kV.
2. field emission light source according to claim 1 (15) wherein uses the injection and the technology of inclining that conductive layer (3) is put on the enclosed type transparent configuration (13).
3. field emission light source according to claim 1 and 2 (15), wherein the conductivity (S) of transparency conducting layer (3) is directly proportional with the thickness of transparency conducting layer (3) in the bulk conductivity situation.
4. field emission light source according to claim 1 and 2 (15), wherein luminescent layer (5) directly is adjacent to transparency conducting layer (3).
5. field emission light source according to claim 1 and 2 (15), wherein potential difference (9) is 5～11kV.
6. field emission light source according to claim 1 and 2 (15), wherein transparency conducting layer (3) is at least a among indium tin oxide ITO and the zinc oxide ZnO.
7. field emission light source according to claim 1 (15), wherein enclosed type transparent configuration (13) is processed by glass.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0400156A SE0400156D0 (en) | 2004-01-29 | 2004-01-29 | An anode in a field emission light source and a field emission light source comprising the anode |
| SE0400156-6 | 2004-01-29 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005800034948A Division CN1922712A (en) | 2004-01-29 | 2005-01-28 | An anode in a field emission light source and a field emission light source comprising the anode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102522317A true CN102522317A (en) | 2012-06-27 |
Family
ID=31493118
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011104026257A Pending CN102522317A (en) | 2004-01-29 | 2005-01-28 | Anode in field emission light source and field emission light source including the same |
| CNA2005800034948A Pending CN1922712A (en) | 2004-01-29 | 2005-01-28 | An anode in a field emission light source and a field emission light source comprising the anode |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005800034948A Pending CN1922712A (en) | 2004-01-29 | 2005-01-28 | An anode in a field emission light source and a field emission light source comprising the anode |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1709665A1 (en) |
| CN (2) | CN102522317A (en) |
| SE (1) | SE0400156D0 (en) |
| WO (1) | WO2005074006A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI492669B (en) * | 2012-08-22 | 2015-07-11 | Univ Nat Defense | Field emission anode and manufacturing method thereof |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2009322214A1 (en) | 2008-12-04 | 2011-07-21 | The Regents Of The University Of California | Electron injection nanostructured semiconductor material anode electroluminescence method and device |
| EP2337432B1 (en) | 2009-12-21 | 2013-04-24 | LightLab Sweden AB | Resonance circuitry for a field emission lighting arrangement |
| EP2339610B1 (en) | 2009-12-22 | 2016-10-12 | LightLab Sweden AB | Reflective anode structure for a field emission lighting arrangement |
| EP2375435B1 (en) | 2010-04-06 | 2016-07-06 | LightLab Sweden AB | Field emission cathode |
| CN102906823B (en) * | 2010-06-09 | 2014-04-02 | 海洋王照明科技股份有限公司 | Conductive glue mixture, fluorescent screen anode plate and manufacture method thereof |
| EP2472553B1 (en) | 2010-12-28 | 2018-06-27 | LightLab Sweden AB | Field emission lighting arrangement |
| EP2472552A1 (en) | 2010-12-28 | 2012-07-04 | LightLab Sweden AB | Field emission lighting arrangement |
| EP2784800B1 (en) * | 2013-03-25 | 2018-12-05 | LightLab Sweden AB | Shaped cathode for a field emission arrangement |
| EP3511974B1 (en) | 2014-12-17 | 2021-02-24 | LightLab Sweden AB | Field emission light source |
| EP3096341B1 (en) | 2015-05-18 | 2020-07-22 | LightLab Sweden AB | Method for manufacturing nanostructures for a field emission cathode |
| US10319553B2 (en) | 2016-03-16 | 2019-06-11 | Lightlab Sweden Ab | Method for controllably growing ZnO Nanowires |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1264491A (en) * | 1997-06-13 | 2000-08-23 | 莱特拉伯公司 | Light source including a field emission cathode and a field emission cathode |
| WO2001009914A1 (en) * | 1999-07-30 | 2001-02-08 | Nanolight International Ltd | A light source, and a field emission cathode |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4937503A (en) * | 1988-04-11 | 1990-06-26 | Gte Laboratories Incorporated | Fluorescent light source based on a phosphor excited by a molecular discharge |
| US6573643B1 (en) * | 1992-03-16 | 2003-06-03 | Si Diamond Technology, Inc. | Field emission light source |
| JP3107743B2 (en) * | 1995-07-31 | 2000-11-13 | カシオ計算機株式会社 | Electron-emitting electrode, method of manufacturing the same, and cold cathode fluorescent tube and plasma display using the same |
| US6322712B1 (en) * | 1999-09-01 | 2001-11-27 | Micron Technology, Inc. | Buffer layer in flat panel display |
| KR100672627B1 (en) * | 2000-12-27 | 2007-01-23 | 엘지.필립스 엘시디 주식회사 | Flat luminescence lamp and method for manufacturing the same |
-
2004
- 2004-01-29 SE SE0400156A patent/SE0400156D0/en unknown
-
2005
- 2005-01-28 CN CN2011104026257A patent/CN102522317A/en active Pending
- 2005-01-28 CN CNA2005800034948A patent/CN1922712A/en active Pending
- 2005-01-28 EP EP05704772A patent/EP1709665A1/en not_active Withdrawn
- 2005-01-28 WO PCT/SE2005/000106 patent/WO2005074006A1/en not_active Application Discontinuation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1264491A (en) * | 1997-06-13 | 2000-08-23 | 莱特拉伯公司 | Light source including a field emission cathode and a field emission cathode |
| WO2001009914A1 (en) * | 1999-07-30 | 2001-02-08 | Nanolight International Ltd | A light source, and a field emission cathode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI492669B (en) * | 2012-08-22 | 2015-07-11 | Univ Nat Defense | Field emission anode and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1709665A1 (en) | 2006-10-11 |
| CN1922712A (en) | 2007-02-28 |
| WO2005074006A1 (en) | 2005-08-11 |
| SE0400156D0 (en) | 2004-01-29 |
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Application publication date: 20120627 |