CN102520221B - Manufacturing method of electroluminescence test electrode - Google Patents
Manufacturing method of electroluminescence test electrode Download PDFInfo
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- CN102520221B CN102520221B CN201110431950.6A CN201110431950A CN102520221B CN 102520221 B CN102520221 B CN 102520221B CN 201110431950 A CN201110431950 A CN 201110431950A CN 102520221 B CN102520221 B CN 102520221B
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- indium
- indium grain
- test
- epitaxial wafer
- grain
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Abstract
The invention discloses a manufacturing method of an electroluminescence test electrode. The method comprises the following steps: selecting indium granular with a same size; using a fixed pressure to carry out constant force pressing indium granular on an epitaxial wafer; repeatedly carrying out heating, cooling, the constant force pressing to the indium granular so that a resistance between the indium granular and the epitaxial wafer can reach stability. The invention has the following advantages that: the manufacturing method is simple; usage is convenient; through repeatedly carrying out the heating, the cooling, the constant force pressing to the indium granular, repeatability of the test can be substantially increased and a repeatability standard deviation can be controlled in 0-4% so that a reliable and stable photoelectric test result can be obtained.
Description
Technical field
The present invention relates to a kind of method for making of electrode, specifically a kind of method for making of electroluminescence test electrode, belongs to LED test electrode field.
Background technology
After epitaxial wafer growth, need to measure fast and accurately its photoelectric parameter with electroluminescence tester, then according to measurement result, adjust the parameters of epitaxial growth program, to reach the object of continuing to optimize epitaxial structure.
Current electrode fabrication scheme comprises the following steps: 1. select uniform indium grain; 2. on epitaxial wafer, press indium grain; 3. heating reduces the contact resistance of indium grain and epitaxial wafer; 4. electroluminescence tester is tested.
The shortcoming of prior art: use before the measurement of electroluminescence tester each, all to first carry out P (just) electrode and N(negative) electrode, the indium grain that needs to remove on epitaxial wafer after measuring is for the first time made electrode again, and then test for the second time, yet, the result recording for the second time and for the first time larger difference of existence, the poor repeatability of test, is mainly that the test repeatability of luminous power is poor.
Summary of the invention
In order to address the above problem, the present invention has designed a kind of method for making of electroluminescence test electrode, the method by indium grain is repeated heating, cooling, determine power and press repeatedly, can make electroluminescence tester more accurate to the measurement of epitaxial wafer photoelectric parameter, the repeatability of test is better.
Technical scheme of the present invention is:
A method for making for electroluminescence test electrode, comprises the following steps:
(1) select uniform indium grain; The absolute size of indium grain be there is no and polarized, but it is as far as possible identical to select the diameter of indium grain, the standard of tolerance of diameter is less than 5%;
(2) on epitaxial wafer, use fixation pressure to carry out determining power and press indium grain; The size of pressure be there is no and polarized, but the size of pressure will keep stable when test, the tolerance of pressure is less than 1%; The concrete shape of press device is not limit, and having certain weight can implement the effect of pressing to indium grain;
(3) to indium grain heat successively, cooling, determine power and press, repetitive cycling repeatedly, makes the resistance between indium grain and epitaxial wafer reach stable, i.e. logical identical electric current, the variation of resistance and the variation of voltage are synchronous, and repeatedly the tolerance of test voltage or resistance is less than 5%; This step can make the resistance stabilization degree between indium grain and epitaxial wafer greatly improve, and efficiently solves the poor problem of test repeatability;
(4) last, electroluminescence tester is tested.
Wherein, step (2) is carried out determining power and is pressed, and uses the dynamics of press device when guaranteeing fixedly to press indium grain identical; Press the material roughness Ra >=5um of indium grain, to guarantee to press rear indium grain with epitaxial wafer contact with to press material separated; The back side that is preferably Sapphire Substrate is the facet of alundum (Al2O3) substrate;
The heating-up temperature of described step (3) is 350-400 ℃, is wherein preferably 380 ℃; Heat time 1-3 minute, is wherein preferably 2 minutes; Be 0.5-2 minute cool time, is wherein preferably 1 minute; Compressing time is 2-8 second, is wherein preferably for 5 seconds.
The heating of described step (3), cooling, determine power and press, cycle criterion is 2-10 time, is wherein preferably 3 times.
Research is found, only change accuracy and repeatability that heating-up temperature, heat time, cool time and press pressure all can not improve test, by adopt indium electrode Repeat-heating, cooling, determine the electrode fabrication mode that power is pressed, improved and tested accuracy and repeatability.
The reason that test accuracy and repeatability improve is: it is nearer to press the contact that can make between indium grain and epitaxial wafer, but the Ohmic contact that can not form; Heating can make the Ohmic contact having formed between indium grain and epitaxial wafer, but caused the increase of hole between indium grain and epitaxial wafer simultaneously, therefore take indium electrode Repeat-heating, cooling, determine power and press, what so both guaranteed to contact between indium grain and epitaxial wafer is nearer, contact area is larger, and the Ohmic contact between the while also reaches good state.
Adopt respectively existing electrode fabrication scheme and electrode fabrication scheme of the present invention to make the electrode of epitaxial wafer, then with electroluminescence tester, carried out luminous power test for several times.Result shows: adopt repeated standard deviation that existing method for making its electrode carries out the test of electroluminescence tester more than 10%, and the repeated standard deviation that adopts method for making its electrode of the present invention to carry out the test of electroluminescence tester can be controlled in 4%.
The invention has the advantages that: method for making is simple, easy to use, by indium grain is repeated heating, cooling, determine power and press repeatedly, thereby the repeatability of testing improves greatly, the repeated standard deviation of test, in 4%, has obtained more reliable and stable photoelectricity test result.
Embodiment
Below the preferred embodiments of the present invention are described, should be appreciated that preferred embodiment described herein, only for description and interpretation the present invention, is not intended to limit the present invention.
embodiment 1
A method for making for electroluminescence test electrode, comprises the following steps:
(1) select a collection of indium grain that diameter is 0.65mm, diameter tolerance is in 5%;
(2) on epitaxial wafer, use fixation pressure to carry out determining power to above-mentioned indium grain and press, the tolerance of pressure is less than 1%; The material of pressing indium grain is the facet of alundum (Al2O3) substrate, roughness Ra >=5um;
(3) then indium grain is carried out to 380 ℃ of heating 2 minutes successively, cooling 1 minute, pressed for 5 seconds, circulate 3 times, make the resistance between indium grain and epitaxial wafer reach stable, the tolerance of voltage and resistance is all less than 5%;
(4) finally on electroluminescence tester, test.
The luminous power of test the results are shown in following table.
The result that table 1 adopts method for making its electrode of the present invention to carry out the test of electroluminescence tester
Adopt existing electrode fabrication mode, carry out three repeated tests, the epitaxial wafer luminous power recording the results are shown in Table 2.
The result that table 2 adopts existing method for making its electrode to carry out the test of electroluminescence tester
Analyze: as can be seen from the above table, adopt after electrode fabrication mode of the present invention, the repeated standard deviation of test is by more than 10% being down to 4%, and the photoelectricity test result obtaining is more reliable and stable.
embodiment 2
A method for making for electroluminescence test electrode, comprises the following steps:
(1) select a collection of indium grain that diameter is 0.30mm, diameter tolerance is in 5%;
(2) on epitaxial wafer, use fixation pressure to carry out determining power to above-mentioned indium grain and press, the tolerance of pressure is less than 1%; The material of pressing indium grain is the facet of alundum (Al2O3) substrate, roughness Ra >=5um;
(3) to indium grain successively 400 ℃ heating 1 minute, cooling 0.5 minute, pressed for 2 seconds, circulate 2 times, make the resistance between indium grain and epitaxial wafer reach stable, the tolerance of voltage and resistance is all less than 5%;
(4) finally on electroluminescence tester, test.
The luminous power recording the results are shown in Table 3.
The result that table 3 adopts method for making its electrode of the present invention to carry out the test of electroluminescence tester
Analyze: as can be seen from the above table, adopt after the electrode fabrication mode of this programme, the repeated standard deviation of test is 3%, and the photoelectricity test result obtaining is more reliable and stable.
embodiment 3
A method for making for electroluminescence test electrode, comprises the following steps:
(1) select a collection of indium grain that diameter is 0.65mm, diameter tolerance is in 5%;
(2) on epitaxial wafer, use fixation pressure to carry out determining power and press indium grain, the tolerance of pressure is less than 1%; The material of pressing indium grain is the facet of alundum (Al2O3) substrate, roughness Ra >=5um;
(3) to indium grain successively 350 ℃ heating 3 minutes, cooling 2 minutes, each electrode pressed for 8 seconds, circulated 2 times, made the resistance between indium grain and epitaxial wafer reach stable, the tolerance of voltage and resistance is all less than 5%;
(4) finally on electroluminescence tester, test.
The luminous power recording the results are shown in Table 4.
The result that table 4 adopts method for making its electrode of the present invention to carry out the test of electroluminescence tester
Analyze: as can be seen from the above table, adopt after the electrode fabrication mode of this programme, the repeated standard deviation of test is down to 2%, and the photoelectricity test result obtaining is more reliable and stable.
Finally it should be noted that: the foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, although the present invention is had been described in detail with reference to previous embodiment, for a person skilled in the art, its technical scheme that still can record aforementioned each embodiment is modified, or part technical characterictic is wherein equal to replacement.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (1)
1. a method for making for electroluminescence test electrode, comprises the following steps:
(1) select uniform indium grain;
(2) on epitaxial wafer, use fixation pressure to carry out determining power and press indium grain;
(3) indium grain is carried out successively 380 ℃ of heating 2 minutes, cooling 1 minute, determines power and press 5 seconds, repetitive cycling 3 times, makes the resistance between indium grain and epitaxial wafer reach stable;
The described material roughness Ra >=5um that presses indium grain;
The described material of pressing indium grain is the facet of alundum (Al2O3) substrate;
The standard of tolerance of described indium grain diameter is less than 5%; Described pressure tolerance of pressing indium grain is less than 1%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110431950.6A CN102520221B (en) | 2011-12-21 | 2011-12-21 | Manufacturing method of electroluminescence test electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110431950.6A CN102520221B (en) | 2011-12-21 | 2011-12-21 | Manufacturing method of electroluminescence test electrode |
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| Publication Number | Publication Date |
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| CN102520221A CN102520221A (en) | 2012-06-27 |
| CN102520221B true CN102520221B (en) | 2014-02-19 |
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| CN201110431950.6A Expired - Fee Related CN102520221B (en) | 2011-12-21 | 2011-12-21 | Manufacturing method of electroluminescence test electrode |
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| CN109444701A (en) * | 2017-08-31 | 2019-03-08 | 山东浪潮华光光电子股份有限公司 | A kind of nondestructive test device and test method of LED epitaxial wafer |
| CN107895692B (en) * | 2017-12-19 | 2020-01-21 | 淮北师范大学 | Electrode manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6089442A (en) * | 1996-04-10 | 2000-07-18 | Canon Kabushiki Kaisha | Electrode connection method |
| CN1395305A (en) * | 2002-07-05 | 2003-02-05 | 清华大学 | LED epitaxial wafer electroluminescent nondestructive detection method |
| CN1492449A (en) * | 1994-05-10 | 2004-04-28 | �������ɹ�ҵ��ʽ���� | Electrode member |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05339721A (en) * | 1992-06-03 | 1993-12-21 | Mitsubishi Materials Corp | Production of indium oxide-tin oxide sputtering target |
| JP4014481B2 (en) * | 2002-04-30 | 2007-11-28 | 東レエンジニアリング株式会社 | Bonding method and apparatus |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1492449A (en) * | 1994-05-10 | 2004-04-28 | �������ɹ�ҵ��ʽ���� | Electrode member |
| US6089442A (en) * | 1996-04-10 | 2000-07-18 | Canon Kabushiki Kaisha | Electrode connection method |
| CN1395305A (en) * | 2002-07-05 | 2003-02-05 | 清华大学 | LED epitaxial wafer electroluminescent nondestructive detection method |
Non-Patent Citations (5)
| Title |
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| JP特开平5-339721A 1993.12.21 |
| wtz010.引电极的几种方法.《http://www.antpedia.com/viewspace-52078》.2009, |
| 引电极的几种方法;wtz010;《http://www.antpedia.com/viewspace-52078》;20091202;"2）压铟球"部分 * |
| 气相外延ZnSe单晶薄膜的蓝色电致发光;汤子康等;《发光与显示》;19851231;第6卷(第4期);第314-321页 * |
| 汤子康等.气相外延ZnSe单晶薄膜的蓝色电致发光.《发光与显示》.1985,第6卷(第4期), |
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