CN102517594A - Method for cleaning cerium-based polishing solution residues - Google Patents
Method for cleaning cerium-based polishing solution residues Download PDFInfo
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- CN102517594A CN102517594A CN2011104303211A CN201110430321A CN102517594A CN 102517594 A CN102517594 A CN 102517594A CN 2011104303211 A CN2011104303211 A CN 2011104303211A CN 201110430321 A CN201110430321 A CN 201110430321A CN 102517594 A CN102517594 A CN 102517594A
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Abstract
The invention discloses a method for cleaning cerium-based polishing solution residues, comprising the following steps of: 1) cleaning residual cerium-based polishing powder on the surface of a part by the use of an HNO3:H2O2:H2O acidic solution; 2) cleaning the part taken out from the step 1) by a pure water spraying mode; 3) measuring pure water, weighing ethylene diamine tetraacetic acid (EDTA) and sodium hydroxide, completely dissolving in pure water; 4) diluting the solution prepared in the step 3) in pure water and boiling on an electric furnace; 5) boiling the washed part obtained from the step 2) in the solution obtained from the step 4); and 6) cleaning the part taken out from the step 5) by the pure water spraying mode. According to the method, the acidic solution is used to dissolve most of the residual polishing powder; by the utilization of the EDTA reagent and cerium-based metal complex, the residual metal ions on the surface of the part are removed from the surface of the part after complexation and deposition; and then sodium hydroxide is used to remove organic matters in the polishing solution. By the adoption of the method provided by the invention, it is easy to clean the residual polishing powder on the surface of the part and the cleaning requires a short time and has little influence on micro-roughness of the part surface.
Description
Technical field
The present invention relates to the cleaning technique field, particularly a kind of novel purging method of polishing fluid residue.
Background technology
Be used for the polishing fluid of super-smooth surface processing at present, have the favor that advantages such as high polishing efficiency and great surface quality enjoy the processor because of it, but because the variation of the composition of polishing fluid; Form complicacy, formula rate is secret state, causes to the engineering reliability of this type of polishing fluid cleaning low; Clean the residue that the back part still has a small amount of polishing fluid; Make that the piece surface cleaning after the polishing is unclean, thereby cause that ultraprecise device products qualification rate reduces, and accounts for about 50% of fraction defective.Therefore, the height of cleaning quality has badly influenced the performance of advanced precision instrument, and the ultraprecise cleaning technique of super-smooth surface also becomes one of key difficult problem anxious to be solved in the Ultraprecision Machining thereupon.
Summary of the invention
The purpose of this invention is to provide a kind of purging method to the polishing fluid residue, compare with traditional method, this method both can effectively be removed the polishing fluid residue, improved the part cleanliness factor; Can improve the surface quality of ultra-smooth part again, avoid damage and the corrosion of scavenging solution surface quality of workpieces, very little to the influence of the microroughness of piece surface, thus improved the good article rate of part.
To achieve these goals, the present invention adopts following technical scheme:
A kind of purging method of cerium base polishing fluid residue may further comprise the steps:
1) adopting volume ratio is HNO
3: H
2O
2: H
2O=1: the cerium based relief polishing powder of 1: 1 acidic solution cleaning components remained on surface;
2) clean the part that from step 1), takes out with the mode of pure water spray, clean 5min;
3) measure pure water 600ml, take by weighing YD 30 (EDTA) 8g and sodium hydroxide 3.5-4g and also be dissolved in fully in the said 600ml pure water;
4) get the solution dilution that prepared in the step 3) to 2-5 times of pure water, place on the electric furnace and boil;
5) with step 2) in the washed part solution of putting into step 4) boil;
6) clean the part that from step 5), takes out with the mode of pure water spray, clean 5min, promptly accomplish the cleaning of cerium base polishing fluid residue.
The time that acidic solution described in the step 1) cleans is 1-1.5h.
The temperature of pure water step 2) is 40-50 ℃.
The boiling time of solution described in the step 4) is 3-5min.
With the conventional clean compared with techniques, the present invention has the following advantages: the inventive method is utilized HNO
3: H
2O
2: H
2The most of remaining polishing powder of the acid leach solution of O; The characteristics of utilizing edta reagent to close with cerium Base Metal chromium break away from piece surface with piece surface residual metal ion through complexing, post precipitation; Utilize sodium hydroxide can remove organic characteristics in the polishing fluid again, make the residual polishing powder of piece surface be prone to clean, scavenging period is short, and is little to the microroughness influence of piece surface.In sum, the novel purging method of the cerium base polishing fluid residue of the inventive method development can effectively be removed obstinate polishing fluid residue, thereby obtains the high super-smooth surface of surperficial high-cleanness, high.
Embodiment
Below in conjunction with specific embodiment the present invention is done and to describe in further detail.
Embodiment 1:
1) adopting volume ratio is HNO
3: H
2O
2: H
2O=1: the cerium based relief polishing powder 1h of 1: 1 acidic solution cleaning components remained on surface;
2) clean the part that from step 1), takes out with the mode of pure water spray, clean 5min;
3) in 600ml, 45 ℃ pure water, add the sodium hydroxide of 8 gram YD 30s (EDTA) and 3.5g, be stirred to abundant dissolving;
4), and boil 4min with 5 times of the solution dilutions that has prepared in the step 3);
5) with step 2) in the part that cleans put into step 4 and boil 4min, promptly accomplish the cleaning of cerium base polishing fluid residue.
Cleaning performance is following:
Through Olympus tool microscope and Talysurf CCI Lite white light three-dimensional topography measurement appearance piece surface cleanliness factor and the roughness that adopts different solutions to clean detected; The piece surface that adopts present embodiment to clean does not have the polishing powder residue; And the roughness of part had increased and can reach 0.1nm before roughness was compared and cleaned; The piece surface that traditional method is cleaned has the polishing powder residue, and roughness compare clean before the roughness of part increased 0.3nm.
Embodiment 2
1) adopts HNO
3: H
2O
2: H
2O=1: the cerium based relief polishing powder 1.2h of 1: 1 acidic solution cleaning components remained on surface;
2) clean the part that from step 1), takes out, scavenging period 5min with the mode of pure water spray;
3) in 600ml, 40 ℃ pure water, add the sodium hydroxide of 8 gram YD 30s (EDTA) and 4g, be stirred to abundant dissolving;
4), and boil 3min with 2 times of the solution dilutions that has prepared in the step 3);
5) with step 2) in the part that cleans put into step 4 and boil 3min, promptly accomplish the cleaning of cerium base polishing fluid residue.
Cleaning performance is following:
Through Olympus tool microscope and Talysurf CCI Lite white light three-dimensional topography measurement appearance piece surface cleanliness factor and the roughness that adopts different solutions to clean detected; The piece surface that adopts present embodiment to clean does not have the polishing powder residue; And the roughness of part had increased and can reach 0.1nm before roughness was compared and cleaned; The piece surface that traditional method is cleaned has the polishing powder residue, and roughness compare clean before the roughness of part increased 0.2nm.
Embodiment 3
1) adopts HNO
3: H
2O
2: H
2O=1: the cerium based relief polishing powder 1.5h of 1: 1 acidic solution cleaning components remained on surface;
2) clean the part that from step 1), takes out, scavenging period 5min with the mode of pure water spray;
3) in 600ml, 50 ℃ pure water, add the sodium hydroxide of 8 gram YD 30s (EDTA) and 4g, be stirred to abundant dissolving;
4), and boil 5min with 3 times of the solution dilutions that has prepared in the step 3);
5) with step 2) in the part that cleans put into step 4 and boil 5min, promptly accomplish the cleaning of cerium base polishing fluid residue.
Cleaning performance is following:
Through Olympus tool microscope and Talysurf CCI Lite white light three-dimensional topography measurement appearance piece surface cleanliness factor and the roughness that adopts different solutions to clean detected; The piece surface that adopts present embodiment to clean does not have the polishing powder residue; And the roughness of part had increased and can reach 0.2nm before roughness was compared and cleaned; The piece surface that traditional method is cleaned has the polishing powder residue, and roughness compare clean before the roughness of part increased 0.4nm.
The above is merely the limited embodiment that the present invention provides; It or not embodiment whole or that limit; The conversion of any equivalence that those of ordinary skills take technical scheme of the present invention through reading specification sheets of the present invention is claim of the present invention and contains.
Claims (4)
1. the purging method of a cerium base polishing fluid residue may further comprise the steps:
1) adopting volume ratio is HNO
3: H
2O
2: H
2O=1: the cerium based relief polishing powder of 1: 1 acidic solution cleaning components remained on surface;
2) clean the part that from step 1), takes out with the mode of pure water spray, clean 5min;
3) measure pure water 600ml, take by weighing YD 30 8g and sodium hydroxide 3.5-4g, and be dissolved in fully in the said 600ml pure water;
4) get the solution dilution that prepared in the step 3) to 2-5 times of pure water, place on the electric furnace and boil;
5) with step 2) in the washed part solution of putting into step 4) boil;
6) clean the part that from step 5), takes out with the mode of pure water spray, clean 5min, promptly accomplish the cleaning of cerium base polishing fluid residue.
2. a kind of according to claim 1 novel purging method of cerium base polishing fluid residue is characterized in that: the time that acidic solution described in the step 1) cleans is 1-1.5h.
3. a kind of according to claim 1 novel purging method of cerium base polishing fluid residue is characterized in that: step 2) described in the temperature of pure water be 40-50 ℃.
4. a kind of according to claim 1 novel purging method of cerium base polishing fluid residue is characterized in that: the boiling time of solution described in the step 4) is 3-5min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110430321 CN102517594B (en) | 2011-12-15 | 2011-12-15 | Method for cleaning cerium-based polishing solution residues |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110430321 CN102517594B (en) | 2011-12-15 | 2011-12-15 | Method for cleaning cerium-based polishing solution residues |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102517594A true CN102517594A (en) | 2012-06-27 |
| CN102517594B CN102517594B (en) | 2013-07-24 |
Family
ID=46288650
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110430321 Active CN102517594B (en) | 2011-12-15 | 2011-12-15 | Method for cleaning cerium-based polishing solution residues |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1603470A (en) * | 2004-11-04 | 2005-04-06 | 上海华虹（集团）有限公司 | Metal front contact hole cleaning process |
| US20050126588A1 (en) * | 2003-11-04 | 2005-06-16 | Carter Melvin K. | Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor |
| CN102044474A (en) * | 2009-10-13 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Surface treatment method of copper metal layer subjected to chemically mechanical polishing |
| CN102179390A (en) * | 2010-11-25 | 2011-09-14 | 西安北方捷瑞光电科技有限公司 | Method for cleaning ultra-smooth surface |
-
2011
- 2011-12-15 CN CN 201110430321 patent/CN102517594B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050126588A1 (en) * | 2003-11-04 | 2005-06-16 | Carter Melvin K. | Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor |
| CN1603470A (en) * | 2004-11-04 | 2005-04-06 | 上海华虹（集团）有限公司 | Metal front contact hole cleaning process |
| CN102044474A (en) * | 2009-10-13 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Surface treatment method of copper metal layer subjected to chemically mechanical polishing |
| CN102179390A (en) * | 2010-11-25 | 2011-09-14 | 西安北方捷瑞光电科技有限公司 | Method for cleaning ultra-smooth surface |
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|---|---|
| CN102517594B (en) | 2013-07-24 |
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