CN102510269B - Small short-wave preselector - Google Patents
Small short-wave preselector Download PDFInfo
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- CN102510269B CN102510269B CN201110353334.3A CN201110353334A CN102510269B CN 102510269 B CN102510269 B CN 102510269B CN 201110353334 A CN201110353334 A CN 201110353334A CN 102510269 B CN102510269 B CN 102510269B
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Abstract
The invention discloses a small short-wave preselector, which comprises a basic resonant circuit preceding stage, a basic resonant circuit backward stage, a low-noise amplification circuit, a switching diode capacitor array, a triode driving circuit, a singlechip main control circuit and radio frequency signal channel gating switches, wherein an input radio frequency signal passes through a first radio frequency signal channel gating switch and then is transmitted to the basic resonant circuit preceding stage for frequency selection, and a useful signal is output; and the useful signal is amplified by the low-noise amplification circuit and subjected to frequency selection output through the basic resonant circuit backward stage and a second radio frequency signal channel gating switch. According to the small short-wave preselector provided by the invention, in a filtering system module of a receiver, a useless signal near a required frequency can be suppressed, and the sensitivity of the receiver is improved.
Description
Technical field
The invention relates to a kind of small short-wave preselector.
Background technology
Traditional frequency fixing communication system carrier frequency is fixed, and interference free performance is poor, in electronics tactical confrontation, is easy to the information content being intercepted and captured transmission by enemy, or finds communication equipment and system site thereof and give away one's position.For improving radio communication performance, improve its antijamming capability, and improve Anti TBIgG, anti-interception capability, anti-intercepted signal fast track etc., have become the important goal of military communication technological innovation and development.Short wave preselector is for the receiving unit in the transmitting and receiving of communication system, and its front end acting predominantly on receiver is connected with antenna, is used for improving the sensitivity of receiver and antijamming capability.And the volume of existing short wave preselector is excessive, band limits is narrower, lacks flexibility and practicality in actual applications, and the therefore reduction of volume, the expansion of band limits are concerning significant the development of short wave preselector.
Summary of the invention
The invention provides small short-wave preselector, in the filtering system module of receiver, the unwanted signal near required frequency can be suppressed and improve receiver sensitivity.
Small short-wave preselector provided by the invention, comprises fundamental resonance circuit prime, fundamental resonance circuit rear class, low noise amplifier circuit, switching diode capacitor array, transistor drive circuit, single-chip microcomputer governor circuit and radio frequency signal channels gating switch; Radio-frequency (RF) signal input end connects the first radio frequency signal channels gating switch, fundamental resonance circuit prime, low noise amplifier circuit, fundamental resonance circuit rear class, the second radio frequency signal channels gating switch, RF signal output successively, described single-chip microcomputer governor circuit connects fundamental resonance circuit prime by the first transistor drive circuit, the first switching diode capacitor array, and described single-chip microcomputer governor circuit also connects fundamental resonance circuit rear class by the second transistor drive circuit, second switch diode capacitance array;
The radiofrequency signal of input is sent to the prime frequency-selecting of fundamental resonance circuit and exports useful signal after the first radio frequency signal channels gating switch, this useful signal amplifies through low noise amplifier circuit, and the useful signal after amplification carries out frequency-selecting output through fundamental resonance circuit rear class, the second radio frequency signal channels gating switch again.
Described single-chip microcomputer governor circuit, for receiving the control command that external control device sends over, calls the data of internal storage particular centre frequency point according to control command, export low and high level and control transistor drive circuit work; Single-chip microcomputer governor circuit controls radio frequency signal channels gating switch and selects signalling channel simultaneously.
Described single-chip microcomputer governor circuit is by the computing of in house software, P0, P1 mouth of control single chip computer exports low and high level, control transistor drive circuit, transistor drive circuit controls the switching of high pressure+85V and 0V, when transistor drive circuit exports high pressure, switching diode in switching diode capacitor array is reverse-biased, and the electric capacity on this road does not participate in resonance; When transistor drive circuit exports 0V, switching diode in switching diode capacitor array is conducting state, now the electric capacity on this road and resonant circuit form LC resonant tank, a certain center frequency points determined of resonance in 1.6MHz--30MHz working frequency range in 750 points.
Described single-chip microcomputer governor circuit also connects low noise amplifier circuit, controls low noise amplifier circuit work.Described low noise amplifier circuit adopts voltage-stabiliser tube as stable biasing circuit, and in conjunction with the negative-feedback circuit in amplifying circuit, makes this circuit working when high/low temperature, has good output gain flatness and stable operating state; Described low noise amplifier circuit also selects High-power amplifier triode, makes this low noise amplifier circuit have excellent output three rank section value.
Described single-chip microcomputer governor circuit adopts single-chip microcomputer C8051F330 governor circuit, uses serial communication mode, has serial asynchronous communication interface RS232C interface.
Described transistor drive circuit, the operating state that low and high level for exporting according to described control circuit controls himself switches under high voltage and low-voltage two states, thus the diode controlled in described switching diode capacitor array is in conducting or cut-off state.
Described switching diode capacitor array, for the operating state according to described transistor drive circuit, the resonant capacitance in control switch diode capacitance array participates in resonant circuit composition resonant tank.Described radio frequency signal channels gating switch adopts triple channel to control, and every passage has 11 road signals.
Small short-wave preselector of the present invention is for the receiver section in radio-frequency (RF) communication system, acting predominantly in the filtering system module of receiver, is for suppressing the miniaturized short wave preselector of the one of the unwanted signal near required frequency and raising receiver sensitivity.
The present invention realizes its superior functional characteristics mainly through following a few major part:
One, than existing short wave preselector, circuit optimization of the present invention is better, adopt single-chip microcomputer C8051F330 governor circuit, this single-chip microcomputer has volume little (4mm*4mm), external circuit is simple, speed fast (built-in 24.5M oscillator) can reach 25MIPS, has higher execution efficiency, adopts serial communication mode;
Two, than existing short wave preselector (existing short wave preselector band limits 2MHz-30MHz, volume 285mm*106mm*32mm ± 0.2mm), the present invention adopts the reference carrier frequency 1.6MHz-30MHz of three wave bands, achieve the effective filtering performance in broadband of MF (intermediate frequency) and HF (high frequency), cover wider and less (the volume 146.5mm*71mm*43.5mm of volume of frequency domain, ± 0.2mm), have more flexibility and practicality than existing short wave preselector;
Three, than existing short wave preselector, the present invention adopts the low noise amplifier circuit of improvement, plays vital effect to improving output three rank section.
Four, in channel control circuit part, the present invention controls to be simplified to triple channel by the four-way of existing short wave preselector and controls, every passage becomes 11 tunnels of the present invention by 10 tunnels of prior art, the circuit design of simplifying both had made volume of the present invention greatly reduce, in turn increase overall bin width, thus have more flexibility and practicality than existing short wave preselector.
Accompanying drawing explanation
Fig. 1 is small short-wave preselector circuit structure block diagram of the present invention.
Fig. 2 is the single-chip microcomputer governor circuit figure of small short-wave preselector of the present invention.
Fig. 3 is the channel control circuit figure of small short-wave preselector of the present invention.
Fig. 4 is the low noise amplifier circuit figure of small short-wave preselector of the present invention.
Embodiment
As shown in Figure 1, the small short-wave preselector of the embodiment of the present invention, comprises fundamental resonance circuit prime, fundamental resonance circuit rear class, low noise amplifier circuit, switching diode capacitor array, transistor drive circuit, single-chip microcomputer governor circuit and radio frequency signal channels gating switch; Radio-frequency (RF) signal input end connects the first radio frequency signal channels gating switch, fundamental resonance circuit prime, low noise amplifier circuit, fundamental resonance circuit rear class, the second radio frequency signal channels gating switch, RF signal output successively, described single-chip microcomputer governor circuit connects fundamental resonance circuit prime by the first transistor drive circuit, the first switching diode capacitor array, and described single-chip microcomputer governor circuit also connects fundamental resonance circuit rear class by the second transistor drive circuit, second switch diode capacitance array;
The radiofrequency signal of input is sent to the prime frequency-selecting of fundamental resonance circuit and exports useful signal after the first radio frequency signal channels gating switch, this useful signal amplifies through low noise amplifier circuit, and the useful signal after amplification carries out frequency-selecting output through fundamental resonance circuit rear class, the second radio frequency signal channels gating switch again.
Described single-chip microcomputer governor circuit, for receiving the control command that external control device sends over, calls the data of internal storage particular centre frequency point according to control command, export low and high level and control transistor drive circuit work; Single-chip microcomputer governor circuit controls first, second radio frequency signal channels gating switch and selects signalling channel simultaneously.
Described transistor drive circuit, the operating state that low and high level for exporting according to described control circuit controls himself switches under high voltage and low-voltage two states, thus the diode controlled in described switching diode capacitor array is in conducting or cut-off state.
Described switching diode capacitor array, for the operating state according to described transistor drive circuit, the resonant capacitance in control switch diode capacitance array participates in resonant circuit composition resonant tank.
Described single-chip microcomputer governor circuit (i.e. MCU) is by the computing of in house software, P0, P1 mouth of control single chip computer exports low and high level, control transistor drive circuit, transistor drive circuit controls the switching of high pressure+85V and 0V, when transistor drive circuit exports high pressure, switching diode in switching diode capacitor array is reverse-biased, and the electric capacity on this road does not participate in resonance; When transistor drive circuit exports 0V, switching diode in switching diode capacitor array is conducting state, now the electric capacity on this road and resonant circuit form LC resonant tank, a certain center frequency points determined of resonance in 1.6MHz--30MHz working frequency range in 750 points.Described single-chip microcomputer governor circuit adopts single-chip microcomputer C8051F330 governor circuit, uses serial communication mode, has serial asynchronous communication interface RS232C interface.This single-chip microcomputer volume is little, and external circuit is simple and the speed of service is fast, thus makes the present invention have higher execution efficiency.
Described serial communication refers to receiver in the mode of asynchronous serial communication to control the mode of operation of preselector.Certain preselector can adopt any one communication work mode as required.Serial communication mode of the present invention is:
1, communication interface adopts serial asynchronous communication interface RS232C interface;
2, command format: speed 115200bpS; Start bit: 1; Data bit: 8; Position of rest: 1;
3, tune command: 02H 55H 31 30 30 30 30 30 30 30 (the ASC code of frequency 10MhZ) 03H;
4, self-inspection order: 02H 51H 03H (preselector loopback 79H represents normal, should loopback in 300uS);
5, bypass commands: 02H 50H 03H.
Fig. 2, Fig. 3 describe the operation principle of main control circuit part of the present invention, the control command that MCU sends over for receiving described control device, call the data of inner particular centre frequency point according to control command, export low and high level at P1.0-P0.2 mouth and controlled transistor drive circuit afterwards through chip UL, UH conversion.The low and high level that chip U2 exports according to P2.0, P0.3 pin of MCU carries out decoding, thus controls to be operated in certain passage.The main control circuit that this kind of the present invention is optimized controls to be simplified to triple channel by the four-way of existing short wave preselector and controls, in Fig. 3, T1, T2, T3 represent three passages, every passage becomes 11 tunnels of the present invention by 10 tunnels before, the circuit design of simplifying both had made volume of the present invention greatly reduce, in turn increase overall bin width, thus have more flexibility and practicality than existing short wave preselector.
Fig. 4 is the low noise amplifier circuit figure of small short-wave preselector of the present invention.Fig. 4 have employed voltage-stabiliser tube as stable biasing circuit, then in conjunction with the negative-feedback circuit in amplifying circuit, makes this circuit working when high/low temperature, also can ensure good output gain flatness and stable operating state; The power discharging transistor that next the present invention has selected volume close but more powerful, this circuit is had and well exports three rank section values, more existing short wave preselector amplifying circuit has critical advantage.
Above disclosedly be only a kind of preferred embodiment of the present invention, certainly can not limit the interest field of the present invention with this, therefore according to the equivalent variations that the claims in the present invention are done, still belong to the scope that the present invention is contained.
Claims (5)
1. small short-wave preselector, is characterized in that, comprises fundamental resonance circuit prime, fundamental resonance circuit rear class, low noise amplifier circuit, switching diode capacitor array, transistor drive circuit, single-chip microcomputer governor circuit and radio frequency signal channels gating switch;
Radio-frequency (RF) signal input end connects the first radio frequency signal channels gating switch, fundamental resonance circuit prime, low noise amplifier circuit, fundamental resonance circuit rear class, the second radio frequency signal channels gating switch, RF signal output successively;
Described single-chip microcomputer governor circuit connects fundamental resonance circuit prime by the first transistor drive circuit, the first switching diode capacitor array, and described single-chip microcomputer governor circuit also connects fundamental resonance circuit rear class by the second transistor drive circuit, second switch diode capacitance array;
The radiofrequency signal of input is sent to the prime frequency-selecting of fundamental resonance circuit and exports useful signal after the first radio frequency signal channels gating switch, this useful signal amplifies through low noise amplifier circuit, and the useful signal after amplification carries out frequency-selecting output through fundamental resonance circuit rear class, the second radio frequency signal channels gating switch again;
Described single-chip microcomputer governor circuit also connects low noise amplifier circuit, controls low noise amplifier circuit work; Described low noise amplifier circuit adopts voltage-stabiliser tube as stable biasing circuit, and in conjunction with the negative-feedback circuit in amplifying circuit, makes this circuit working when high/low temperature, has good output gain flatness and stable operating state; Described low noise amplifier circuit also selects High-power amplifier triode, makes this low noise amplifier circuit have excellent output three rank section value;
Described radio frequency signal channels gating switch adopts triple channel to control, and every passage has 11 road signals; Described single-chip microcomputer governor circuit, for receiving the control command that external control device sends over, calls the data of internal storage particular centre frequency point according to control command, export low and high level and control transistor drive circuit work; Single-chip microcomputer governor circuit controls radio frequency signal channels gating switch and selects signalling channel simultaneously.
2. small short-wave preselector according to claim 1, it is characterized in that, described single-chip microcomputer governor circuit is by the computing of in house software, P0, P1 mouth of control single chip computer exports low and high level, control transistor drive circuit, transistor drive circuit controls the switching of high pressure+85V and 0V, when transistor drive circuit exports high pressure, switching diode in switching diode capacitor array is reverse-biased, and the electric capacity of described switching diode capacitor array does not participate in resonance; When transistor drive circuit exports 0V, switching diode in switching diode capacitor array is conducting state, now the electric capacity of described switching diode capacitor array and resonant circuit form LC resonant tank, a certain center frequency points determined of resonance in 1.6MHz--30MHz working frequency range in 750 points.
3. small short-wave preselector according to claim 1, is characterized in that, described single-chip microcomputer governor circuit adopts single-chip microcomputer C8051F330 governor circuit, uses serial communication mode, has serial asynchronous communication interface RS232C interface.
4. small short-wave preselector according to claim 1, it is characterized in that, described transistor drive circuit, the operating state that low and high level for exporting according to described single-chip microcomputer governor circuit controls himself switches under high voltage and low-voltage two states, thus the diode controlled in described switching diode capacitor array is in conducting or cut-off state.
5. small short-wave preselector according to claim 1, it is characterized in that, described switching diode capacitor array, for the operating state according to described transistor drive circuit, the resonant capacitance in control switch diode capacitance array participates in resonant circuit composition resonant tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110353334.3A CN102510269B (en) | 2011-11-09 | 2011-11-09 | Small short-wave preselector |
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| CN201110353334.3A CN102510269B (en) | 2011-11-09 | 2011-11-09 | Small short-wave preselector |
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| CN102510269A CN102510269A (en) | 2012-06-20 |
| CN102510269B true CN102510269B (en) | 2014-12-17 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102946258B (en) * | 2012-10-10 | 2015-02-11 | 广州海格通信集团股份有限公司 | Short-wave narrow-band frequency-hopping pre-back selector |
| CN107124156B (en) * | 2017-04-26 | 2023-08-04 | 贵阳顺络迅达电子有限公司 | Frequency hopping filter with gain output |
| CN109039487B (en) * | 2018-09-10 | 2024-02-27 | 陕西烽火诺信科技有限公司 | Short wave prognosis selector internal self-checking system |
| CN112835022A (en) * | 2021-01-29 | 2021-05-25 | 杜柏良 | A 24GHz millimeter wave radar device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4021739A (en) * | 1976-03-19 | 1977-05-03 | Raytheon Company | Distress signal protection system |
| JP3415431B2 (en) * | 1998-03-20 | 2003-06-09 | 株式会社東芝 | Radio transceiver and its receiving high-frequency unit and control unit |
| CN201436788U (en) * | 2009-06-17 | 2010-04-07 | 广州市圣大电子有限公司 | Short wave preselector |
| CN201608711U (en) * | 2009-09-09 | 2010-10-13 | 朱辉 | Ultra-high speed short-wave band broadband preselector |
-
2011
- 2011-11-09 CN CN201110353334.3A patent/CN102510269B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4021739A (en) * | 1976-03-19 | 1977-05-03 | Raytheon Company | Distress signal protection system |
| JP3415431B2 (en) * | 1998-03-20 | 2003-06-09 | 株式会社東芝 | Radio transceiver and its receiving high-frequency unit and control unit |
| CN201436788U (en) * | 2009-06-17 | 2010-04-07 | 广州市圣大电子有限公司 | Short wave preselector |
| CN201608711U (en) * | 2009-09-09 | 2010-10-13 | 朱辉 | Ultra-high speed short-wave band broadband preselector |
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Effective date of registration: 20210525 Address after: 528308 No.1-5, north of the first floor, office building a, Shengda Industrial Park, No.2 north of Xinxi 4th Road, Xiashi village committee, Lunjiao, Shunde District, Foshan City, Guangdong Province Patentee after: Guangdong Shengda Communication Co.,Ltd. Address before: 528308 the second floor of the factory building beside the old Guangzhu highway of changjiao neighborhood committee of Lunjiao sub district office, Shunde District, Foshan City, Guangdong Province Patentee before: GUANGDONG SHENGDA ELECTRONIC Co.,Ltd. |
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