CN102510269A - Small short-wave preselector - Google Patents
Small short-wave preselector Download PDFInfo
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- CN102510269A CN102510269A CN2011103533343A CN201110353334A CN102510269A CN 102510269 A CN102510269 A CN 102510269A CN 2011103533343 A CN2011103533343 A CN 2011103533343A CN 201110353334 A CN201110353334 A CN 201110353334A CN 102510269 A CN102510269 A CN 102510269A
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Abstract
The invention discloses a small short-wave preselector, which comprises a basic resonant circuit preceding stage, a basic resonant circuit backward stage, a low-noise amplification circuit, a switching diode capacitor array, a triode driving circuit, a singlechip main control circuit and radio frequency signal channel gating switches, wherein an input radio frequency signal passes through a first radio frequency signal channel gating switch and then is transmitted to the basic resonant circuit preceding stage for frequency selection, and a useful signal is output; and the useful signal is amplified by the low-noise amplification circuit and subjected to frequency selection output through the basic resonant circuit backward stage and a second radio frequency signal channel gating switch. According to the small short-wave preselector provided by the invention, in a filtering system module of a receiver, a useless signal near a required frequency can be suppressed, and the sensitivity of the receiver is improved.
Description
Technical field
The invention relates to a kind of small-sized shortwave preselector.
Background technology
Traditional decide frequency communication system carrier fixed-frequency, interference free performance is poor, in the electronics tactical confrontation, is easy to intercepted and captured by the enemy information content of transmission, or finds communication equipment and system site thereof and give away one's position.For improving radio communication performance, improve its antijamming capability, and improve anti-ly intercept and capture, anti-interception capability, anti-intercepted signal is followed the trail of etc. fast, has become the important goal of military communication technological innovation and development.The shortwave preselector is the receiving unit that transmits and receives that is used for communication system, and its front end that mainly acts on receiver is connected with antenna, is used for improving the sensitivity and the antijamming capability of receiver.And the volume of existing shortwave preselector is excessive, and band limits is narrower, in practical application, lacks flexibility and practicality, so the expansion of the reducing of volume, band limits is significant concerning the development of shortwave preselector.
Summary of the invention
The present invention provides small-sized shortwave preselector, in the filtering system module of receiver, can suppress near the unwanted signal the frequency that requires with improve receiver sensitivity.
Small-sized shortwave preselector provided by the invention comprises level behind fundamental resonance circuit prime, the fundamental resonance circuit, low noise amplifier circuit, switching diode capacitor array, transistor drive circuit, single-chip microcomputer governor circuit and radio frequency signal channels gating switch; RF signal input end connects level behind the first radio frequency signal channels gating switch, fundamental resonance circuit prime, low noise amplifier circuit, the fundamental resonance circuit, the second radio frequency signal channels gating switch, radiofrequency signal output successively; Said single-chip microcomputer governor circuit connects fundamental resonance circuit prime through first transistor drive circuit, the first switching diode capacitor array, and said single-chip microcomputer governor circuit is also through level behind second transistor drive circuit, the second switch diode capacitance array connection fundamental resonance circuit;
The radiofrequency signal of input is sent to the prime frequency-selecting of fundamental resonance circuit and exports useful signal behind the first radio frequency signal channels gating switch; This useful signal amplifies through low noise amplifier circuit, and the useful signal after the amplification carries out frequency-selecting output through level, the second radio frequency signal channels gating switch behind the fundamental resonance circuit again.
Said single-chip microcomputer governor circuit is used to receive the control command that the external control device sends over, and calls the data of internal storage particular centre frequency point according to control command, and the output high-low level is controlled transistor drive circuit work; The radio frequency signal channels of single-chip microcomputer governor circuit control simultaneously gating switch is selected signalling channel.
Said single-chip microcomputer governor circuit is through the computing of in house software; The P0 of control single chip computer, P1 mouth output high-low level; The control transistor drive circuit, the switching of transistor drive circuit control high pressure+85V and 0V is when transistor drive circuit output high pressure; Switching diode in the switching diode capacitor array is anti-state partially, and the electric capacity on this road is not participated in resonance; When transistor drive circuit output 0V; Switching diode in the switching diode capacitor array is conducting state; This moment this road electric capacity and resonant circuit composition LC resonant tank, resonance is a certain definite center frequency points in 750 points in the 1.6MHz--30MHz working frequency range.
Said single-chip microcomputer governor circuit also connects low noise amplifier circuit, the work of control low noise amplifier circuit.Said low noise amplifier circuit adopts voltage-stabiliser tube as stable biasing circuit, and combines the negative-feedback circuit in the amplifying circuit, makes this circuit working under the situation of high low temperature, and output gain flatness and stable operating state are preferably arranged; Said low noise amplifier circuit is also selected high-power power discharging transistor for use, makes this low noise amplifier circuit that excellent output three rank section values arranged.
Said single-chip microcomputer governor circuit adopts single-chip microcomputer C8051F330 governor circuit, and the utilization serial communication mode has serial asynchronous communication interface RS232C interface.
Said transistor drive circuit; Be used under high voltage and low-voltage two states, switching, thereby the diode of controlling in the said switching diode capacitor array is in conducting or cut-off state according to himself operating state of the high-low level control of said control circuit output.
Said switching diode capacitor array is used for the operating state according to said transistor drive circuit, and the resonant capacitance in the control switch diode capacitance array is participated in resonant circuit and formed resonant tank.Said radio frequency signal channels gating switch adopts triple channel control, and every passage has 11 road signals.
Small-sized shortwave preselector of the present invention is the receiver section that is used for RF communication system; Mainly act in the filtering system module of receiver, be used to suppress near unwanted signal the frequency that requires and a kind of miniaturization shortwave preselector that improves receiver sensitivity.
The present invention mainly realizes its graceful function characteristics through following several major parts:
One, than existing shortwave preselector; Circuit optimization of the present invention is better, adopts single-chip microcomputer C8051F330 governor circuit, and this single-chip microcomputer has volume little (4mm*4mm); External circuit is simple; Speed fast (built-in 24.5M oscillator) can reach 25MIPS, has higher execution efficient, adopts serial communication mode;
Two, than existing shortwave preselector (existing shortwave preselector band limits 2MHz-30MHz, volume 285mm*106mm*32mm ± 0.2mm); The present invention adopts the reference carrier frequency 1.6MHz-30MHz of three wave bands; Realized the broadband effective filtering performance of MF (intermediate frequency) with HF (high frequency); The covering frequency domain is wider and volume is littler (volume 146.5mm*71mm*43.5mm, ± 0.2mm), have more flexibility and practicality than existing shortwave preselector;
Three, than existing shortwave preselector, the present invention adopts improved low noise amplifier circuit, plays crucial effects to improving output three rank sections.
Four, in the channel control circuit part; The present invention is simplified to triple channel control by the four-way control of existing shortwave preselector; Every passage becomes of the present invention 11 the tunnel by 10 tunnel of prior art; The circuit design of simplifying had both made volume of the present invention reduce greatly, had increased whole bin width again, thereby had more flexibility and practicality than existing shortwave preselector.
Description of drawings
Fig. 1 is the small-sized shortwave preselector of a present invention circuit structure block diagram.
Fig. 2 is the single-chip microcomputer governor circuit figure of the small-sized shortwave preselector of the present invention.
Fig. 3 is the channel control circuit figure of the small-sized shortwave preselector of the present invention.
Fig. 4 is the low noise amplifier circuit figure of the small-sized shortwave preselector of the present invention.
Embodiment
As shown in Figure 1; The small-sized shortwave preselector of the embodiment of the invention comprises level behind fundamental resonance circuit prime, the fundamental resonance circuit, low noise amplifier circuit, switching diode capacitor array, transistor drive circuit, single-chip microcomputer governor circuit and radio frequency signal channels gating switch; RF signal input end connects level behind the first radio frequency signal channels gating switch, fundamental resonance circuit prime, low noise amplifier circuit, the fundamental resonance circuit, the second radio frequency signal channels gating switch, radiofrequency signal output successively; Said single-chip microcomputer governor circuit connects fundamental resonance circuit prime through first transistor drive circuit, the first switching diode capacitor array, and said single-chip microcomputer governor circuit is also through level behind second transistor drive circuit, the second switch diode capacitance array connection fundamental resonance circuit;
The radiofrequency signal of input is sent to the prime frequency-selecting of fundamental resonance circuit and exports useful signal behind the first radio frequency signal channels gating switch; This useful signal amplifies through low noise amplifier circuit, and the useful signal after the amplification carries out frequency-selecting output through level, the second radio frequency signal channels gating switch behind the fundamental resonance circuit again.
Said single-chip microcomputer governor circuit is used to receive the control command that the external control device sends over, and calls the data of internal storage particular centre frequency point according to control command, and the output high-low level is controlled transistor drive circuit work; First, second radio frequency signal channels gating switch of single-chip microcomputer governor circuit control is simultaneously selected signalling channel.
Said transistor drive circuit; Be used under high voltage and low-voltage two states, switching, thereby the diode of controlling in the said switching diode capacitor array is in conducting or cut-off state according to himself operating state of the high-low level control of said control circuit output.
Said switching diode capacitor array is used for the operating state according to said transistor drive circuit, and the resonant capacitance in the control switch diode capacitance array is participated in resonant circuit and formed resonant tank.
Said single-chip microcomputer governor circuit (being MCU) is through the computing of in house software; The P0 of control single chip computer, P1 mouth output high-low level; The control transistor drive circuit, the switching of transistor drive circuit control high pressure+85V and 0V is when transistor drive circuit output high pressure; Switching diode in the switching diode capacitor array is anti-state partially, and the electric capacity on this road is not participated in resonance; When transistor drive circuit output 0V; Switching diode in the switching diode capacitor array is conducting state; This moment this road electric capacity and resonant circuit composition LC resonant tank, resonance is a certain definite center frequency points in 750 points in the 1.6MHz--30MHz working frequency range.Said single-chip microcomputer governor circuit adopts single-chip microcomputer C8051F330 governor circuit, and the utilization serial communication mode has serial asynchronous communication interface RS232C interface.This single-chip microcomputer volume is little, and external circuit is simple and the speed of service is fast, thereby makes the present invention have higher execution efficient.
Said serial communication refers to receiver is controlled preselector with the mode of asynchronous serial communication mode of operation.Certainly preselector can adopt any communication work mode as required.Serial communication mode of the present invention is:
1, communication interface adopts serial asynchronous communication interface RS232C interface;
2, command format: speed 115200bpS; Start bit: 1; Data bit: 8; Position of rest: 1;
3, tune command: 02H 55H 31 30 30 30 30 30 30 30 (the ASC sign indicating number of frequency 10MhZ) 03H;
4, self check order: 02H 51H 03H (preselector loopback 79H represent normally, should loopback in 300uS);
5, bypass order: 02H 50H 03H.
Fig. 2, Fig. 3 have described the operation principle of main control circuit part of the present invention; MCU is used to receive the control command that said control device sends over; Call the data of inner particular centre frequency point according to control command, controlled transistor drive circuit afterwards through chip UL, UH conversion at P1.0-P0.2 mouth output high-low level.Chip U2 deciphers according to the P2.0 of MCU, the high-low level of P0.3 pin output, thereby Control work is at certain passage.The main control circuit of this kind of the present invention optimization is simplified to triple channel control by the four-way control of existing shortwave preselector; T1, T2, T3 represent three passages among Fig. 3; Every passage by before 10 the tunnel become of the present invention 11 the tunnel; The circuit design of simplifying had both made volume of the present invention reduce greatly, had increased whole bin width again, thereby had more flexibility and practicality than existing shortwave preselector.
Fig. 4 is the low noise amplifier circuit figure of the small-sized shortwave preselector of the present invention.Fig. 4 has adopted voltage-stabiliser tube as stable biasing circuit, combines the negative-feedback circuit in the amplifying circuit again, makes this circuit working under the situation of high low temperature, also can guarantee output gain flatness and stable operating state preferably; Secondly the present invention has selected the close but more powerful power discharging transistor of volume for use, makes this circuit that good output three rank section values arranged, and more existing shortwave preselector amplifying circuit has critical advantage.
Above disclosedly be merely a kind of preferred embodiment of the present invention, can not limit the present invention's interest field certainly with this, the equivalent variations of therefore doing according to claim of the present invention still belongs to the scope that the present invention is contained.
Claims (9)
1. small-sized shortwave preselector is characterized in that, comprises level behind fundamental resonance circuit prime, the fundamental resonance circuit, low noise amplifier circuit, switching diode capacitor array, transistor drive circuit, single-chip microcomputer governor circuit and radio frequency signal channels gating switch; RF signal input end connects level behind the first radio frequency signal channels gating switch, fundamental resonance circuit prime, low noise amplifier circuit, the fundamental resonance circuit, the second radio frequency signal channels gating switch, radiofrequency signal output successively; Said single-chip microcomputer governor circuit connects fundamental resonance circuit prime through first transistor drive circuit, the first switching diode capacitor array, and said single-chip microcomputer governor circuit is also through level behind second transistor drive circuit, the second switch diode capacitance array connection fundamental resonance circuit;
The radiofrequency signal of input is sent to the prime frequency-selecting of fundamental resonance circuit and exports useful signal behind the first radio frequency signal channels gating switch; This useful signal amplifies through low noise amplifier circuit, and the useful signal after the amplification carries out frequency-selecting output through level, the second radio frequency signal channels gating switch behind the fundamental resonance circuit again.
2. according to the said small-sized shortwave preselector of claim 1; It is characterized in that; Said single-chip microcomputer governor circuit; Be used to receive the control command that the external control device sends over, call the data of internal storage particular centre frequency point according to control command, the output high-low level is controlled transistor drive circuit work; The radio frequency signal channels of single-chip microcomputer governor circuit control simultaneously gating switch is selected signalling channel.
3. according to claim 1 or 2 said small-sized shortwave preselectors, it is characterized in that said single-chip microcomputer governor circuit is through the computing of in house software; The P0 of control single chip computer, P1 mouth output high-low level; The control transistor drive circuit, the switching of transistor drive circuit control high pressure+85V and 0V is when transistor drive circuit output high pressure; Switching diode in the switching diode capacitor array is anti-state partially, and the electric capacity on this road is not participated in resonance; When transistor drive circuit output 0V; Switching diode in the switching diode capacitor array is conducting state; This moment this road electric capacity and resonant circuit composition LC resonant tank, resonance is a certain definite center frequency points in 750 points in the 1.6MHz--30MHz working frequency range.
4. according to the said small-sized shortwave preselector of claim 1, it is characterized in that said single-chip microcomputer governor circuit also connects low noise amplifier circuit, the work of control low noise amplifier circuit.
5. according to the said small-sized shortwave preselector of claim 1, it is characterized in that said single-chip microcomputer governor circuit adopts single-chip microcomputer C8051F330 governor circuit, the utilization serial communication mode has serial asynchronous communication interface RS232C interface.
6. according to the said small-sized shortwave preselector of claim 1; It is characterized in that; Said low noise amplifier circuit adopts voltage-stabiliser tube as stable biasing circuit; And the negative-feedback circuit in the combination amplifying circuit, make this circuit working under the situation of high low temperature, output gain flatness and stable operating state are preferably arranged; Said low noise amplifier circuit is also selected high-power power discharging transistor for use, makes this low noise amplifier circuit that excellent output three rank section values arranged.
7. according to the said small-sized shortwave preselector of claim 1; It is characterized in that; Said transistor drive circuit; Be used under high voltage and low-voltage two states, switching, thereby the diode of controlling in the said switching diode capacitor array is in conducting or cut-off state according to himself operating state of the high-low level control of said control circuit output.
8. according to the said small-sized shortwave preselector of claim 1; It is characterized in that; Said switching diode capacitor array is used for the operating state according to said transistor drive circuit, and the resonant capacitance in the control switch diode capacitance array is participated in resonant circuit and formed resonant tank.
9. according to the said small-sized shortwave preselector of claim 1, it is characterized in that said radio frequency signal channels gating switch adopts triple channel control, every passage has 11 road signals.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110353334.3A CN102510269B (en) | 2011-11-09 | 2011-11-09 | Small short-wave preselector |
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|---|---|---|---|
| CN201110353334.3A CN102510269B (en) | 2011-11-09 | 2011-11-09 | Small short-wave preselector |
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| CN102510269A true CN102510269A (en) | 2012-06-20 |
| CN102510269B CN102510269B (en) | 2014-12-17 |
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| CN201110353334.3A Active CN102510269B (en) | 2011-11-09 | 2011-11-09 | Small short-wave preselector |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102946258A (en) * | 2012-10-10 | 2013-02-27 | 广州海格通信集团股份有限公司 | Short-wave narrow-band frequency-hopping pre-back selector |
| CN107124156A (en) * | 2017-04-26 | 2017-09-01 | 贵阳顺络迅达电子有限公司 | A kind of bounce frequency filter exported with gain |
| CN109039487A (en) * | 2018-09-10 | 2018-12-18 | 陕西烽火诺信科技有限公司 | Device built in self testing system is selected in a kind of shortwave prognosis |
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| US4021739A (en) * | 1976-03-19 | 1977-05-03 | Raytheon Company | Distress signal protection system |
| JP3415431B2 (en) * | 1998-03-20 | 2003-06-09 | 株式会社東芝 | Radio transceiver and its receiving high-frequency unit and control unit |
| CN201436788U (en) * | 2009-06-17 | 2010-04-07 | 广州市圣大电子有限公司 | Short wave preselector |
| CN201608711U (en) * | 2009-09-09 | 2010-10-13 | 朱辉 | Ultra-high speed short-wave band broadband preselector |
-
2011
- 2011-11-09 CN CN201110353334.3A patent/CN102510269B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4021739A (en) * | 1976-03-19 | 1977-05-03 | Raytheon Company | Distress signal protection system |
| JP3415431B2 (en) * | 1998-03-20 | 2003-06-09 | 株式会社東芝 | Radio transceiver and its receiving high-frequency unit and control unit |
| CN201436788U (en) * | 2009-06-17 | 2010-04-07 | 广州市圣大电子有限公司 | Short wave preselector |
| CN201608711U (en) * | 2009-09-09 | 2010-10-13 | 朱辉 | Ultra-high speed short-wave band broadband preselector |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102946258A (en) * | 2012-10-10 | 2013-02-27 | 广州海格通信集团股份有限公司 | Short-wave narrow-band frequency-hopping pre-back selector |
| CN102946258B (en) * | 2012-10-10 | 2015-02-11 | 广州海格通信集团股份有限公司 | Short-wave narrow-band frequency-hopping pre-back selector |
| CN107124156A (en) * | 2017-04-26 | 2017-09-01 | 贵阳顺络迅达电子有限公司 | A kind of bounce frequency filter exported with gain |
| CN107124156B (en) * | 2017-04-26 | 2023-08-04 | 贵阳顺络迅达电子有限公司 | Frequency hopping filter with gain output |
| CN109039487A (en) * | 2018-09-10 | 2018-12-18 | 陕西烽火诺信科技有限公司 | Device built in self testing system is selected in a kind of shortwave prognosis |
| CN109039487B (en) * | 2018-09-10 | 2024-02-27 | 陕西烽火诺信科技有限公司 | Short wave prognosis selector internal self-checking system |
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| CN102510269B (en) | 2014-12-17 |
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Effective date of registration: 20210525 Address after: 528308 No.1-5, north of the first floor, office building a, Shengda Industrial Park, No.2 north of Xinxi 4th Road, Xiashi village committee, Lunjiao, Shunde District, Foshan City, Guangdong Province Patentee after: Guangdong Shengda Communication Co.,Ltd. Address before: 528308 the second floor of the factory building beside the old Guangzhu highway of changjiao neighborhood committee of Lunjiao sub district office, Shunde District, Foshan City, Guangdong Province Patentee before: GUANGDONG SHENGDA ELECTRONIC Co.,Ltd. |
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