CN102509732A - Low-power-consumption embedded phase-change memory used in microcontroller, phase-change storing material thereof, and preparation method thereof - Google Patents
Low-power-consumption embedded phase-change memory used in microcontroller, phase-change storing material thereof, and preparation method thereof Download PDFInfo
- Publication number
- CN102509732A CN102509732A CN2011104532653A CN201110453265A CN102509732A CN 102509732 A CN102509732 A CN 102509732A CN 2011104532653 A CN2011104532653 A CN 2011104532653A CN 201110453265 A CN201110453265 A CN 201110453265A CN 102509732 A CN102509732 A CN 102509732A
- Authority
- CN
- China
- Prior art keywords
- phase
- nvm
- change material
- preparation
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 230000015654 memory Effects 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 title abstract description 32
- 239000012782 phase change material Substances 0.000 claims abstract description 101
- 238000000034 method Methods 0.000 claims abstract description 47
- 230000008569 process Effects 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000126 substance Substances 0.000 claims description 24
- 239000011232 storage material Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 20
- 238000005468 ion implantation Methods 0.000 claims description 20
- 230000008859 change Effects 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- 238000007654 immersion Methods 0.000 claims description 10
- 239000012298 atmosphere Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 14
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 230000014759 maintenance of location Effects 0.000 abstract description 4
- 230000006870 function Effects 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 57
- 238000003860 storage Methods 0.000 description 20
- 230000007704 transition Effects 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a low-power-consumption embedded phase-change memory used in a microcontroller, a preparation method thereof, and a preparation method of an NVM storing material thereof. The embedded phase-change memory used in the microcontroller comprises a dynamic random-access memory (DRAM) unit and a non-volatile memory (NVM) unit. The DRAM unit and the NVM unit are simultaneously positioned on a same substrate. According to the invention, aiming at a single-target sputtering technology of COMS, Si ions are injected into a DRAM-use phase-change material with low data retention capacity; such that an NVM-use Si-rich phase-change material with low operation function and high data retention capacity is obtained. Therefore, phase-change materials applied for two different phase-change memories of DRAM and NVM are prepared on a same substrate. A SiSbTe or SiGeSbTe phase-change material with good performance is obtained, and utilization amount of photomasks is reduced, technological processes are greatly simplified, technical difficulty is reduced, and product cost is reduced.
Description
Technical field
The present invention relates to material, structure and the manufacturing approach thereof of microcontroller with low-power-consumption embedded phase transition storage.The invention belongs to the microelectronics field.
Technical background
Between the more than ten years in the past, novel memory such as phase transition storage (PCRAM), Memister (RRAM), development such as magnetoresistive memory (MRAM) is rapid, all in the market of challenging traditional non volatile (NVM).Wherein, PCRAM receives widely and paying close attention to.The early-stage Study of PCRAM mainly concentrates on the storage direction, is target to replace traditional NVM, to realize that high-speed and high-density and high reliability are main developing direction, has obtained considerable progress; Meanwhile, PCRAM can also have application widely, promptly opens up computing field.Research confirms that the phase-change material under very small dimensions has good electric property, enough is applied to dynamic random access memory (DRAM), and this discovery makes PCRAM step a great step on the road of super memory becoming.Improve when running into technical bottleneck on storage density direction when traditional DRAM and NVM are further reducing its size, the appearance of many Using P CRAM brings dawn for undoubtedly the development of semiconductor memory.
Memory cell in microcontroller comprises two parts: as the DRAM and the NVM that is used for storage of Installed System Memory.Both have certain difference on device performance requires, as shown in table 1.
Table 1
The application requirements phase-change material high-speed phase change of DRAM and have the erasable number of times of high circulation is like Sb
7Te
3Or Ge
2Sb
9Te
5Material; The application of NVM then requires phase-change material to have high data holding ability, like Si
3.5Sb
2Te
3Or Si
2Ge
2Sb
2Te
5Material.As everyone knows, the Si element be doped with the data confining force that helps improve phase-change material, in the high cycle-index of the high speed that is applied to DRAM but mix suitable Si in the material of low data confining force, can effectively improve the stability of phase-change material.Owing to DRAM and the principle of NVM and preparation method's difference, technical is to be integrated on the chip after both are processed device respectively now.For phase transition storage, if can grow two kinds of materials and DRAM and NVM be prepared on the chip piece simultaneously simultaneously, and reduce the usage quantity of reticle, thereby will simplify processing step reduction technical difficulty and product cost greatly.
Like Fig. 1, shown in Figure 2, researchs such as Shanghai micro-system and information technology research institute, Shanghai Communications University, Fudan University in Shanghai have confirmed that all many targets spatter (Si target and Sb altogether
2Te
3Target) can generate phase-change material Si with good data confining force
xSb
2Te
3, but owing to the oxygen contamination that is separated and the material inherent characteristic causes makes difficult implementation of single target sputter.And many targets sputter tool is not popularized in the CMOS technology, to such an extent as to phase-change material Si
xSb
2Te
3Need to lean on other method preparation.The present invention just provides to single target sputtering technology, and two kinds of different phase transition storages that are applied to DRAM and NVM are prepared in the simple method of a kind of practicality on the same chip.
Summary of the invention
The object of the present invention is to provide the preparation method of a kind of nonvolatile memory (NVM), to solve the technical problem that single target sputter in the existing COMS technology can not obtain well behaved SiSbTe or SiGeSbTe phase-change material with phase-change storage material.
The present invention also aims to provide a kind of microcontroller with low-power-consumption embedded phase transition storage and manufacturing approach thereof; The phase-change material that will be used for dynamic random access memory (DRAM) is grown in same substrate simultaneously with the phase-change material that is used for nonvolatile memory (NVM); DRAM and NVM required material and structure on same substrate, have been prepared simultaneously; Reduced the usage quantity of reticle, reduced technical difficulty and product cost thereby simplified processing step greatly.
One aspect of the present invention provides the preparation method of a kind of nonvolatile memory (NVM) with phase-change storage material, comprises the steps:
1) on Semiconductor substrate, utilizes single target rf magnetron sputtering to obtain chemical formula and be Sb
aTe
3, Si
bSb
cTe
3Or Ge
dSb
eTe
5And thickness is no more than the phase change material film of 10nm; Wherein: 2≤a≤7,0＜b≤1,2≤c≤7,0＜d≤2,4≤e≤10;
2) on step 1) gained film, inject the Si ion, the formation chemical formula is Si
mSb
nTe
3Or Si
zGe
xSb
yTe
5Phase change material film; Wherein: 2≤m≤5,2≤n≤7,2≤z≤9,0＜x≤2,4≤y≤10;
3) film that has injected the Si ion is heat-treated, make the Si element distribute, thereby obtain the same phase change material film of component uniform performance inner the formation evenly of film.
Preferable, the using plasma immersion ion injects (PIII-Plasma Immersion Ion Implantation) method and injects Si element, the Dc bias DC＞200V in the described Si ion implantation process.Preferably, Dc bias DC is greater than 200V and less than 350V.
Preferable, in the described Si ion implantation process, use SiH
4And N
2Atmosphere produces the Si plasma, and SiH
4And N
2Volume ratio less than 1%.Preferably, SiH
4And N
2Volume ratio greater than 0.1% and less than 1%.
Preferable, in the described Si ion implantation process, temperature remains on room temperature to 45 ℃.
Preferable, said heat treatment is carried out in inert atmosphere (like Ar), and heat treatment temperature is 100 ℃～300 ℃, and heat treatment time is 1 minute～30 minutes.
For phase change memory device, the material thickness of 10nm is to meet the requirements of, and the thickness of the phase change material film of phase change memory device is 50～100nm usually.At this moment, need repeatedly repeat above-mentioned 1), 2) step to be to obtain required material design thickness.Promptly in step 2) on the formed phase change material film, repeating step 1) and step 2), until the thickness that reaches needed phase-change storage material film; Heat-treat again afterwards.
The employing phase-change storage material intercrystalline that said method obtained distance is less than 6nm, and crystallite dimension is less than 5nm, and difficult generation is separated.
The present invention on the other hand; Provide a kind of microcontroller (MCU) to use low-power-consumption embedded phase transition storage; Comprise DRAM cell and non-volatile memory cells; It is characterized in that said DRAM cell and non-volatile memory cells grow on the same substrate simultaneously.
The chemical formula of the phase-change material that said DRAM cell uses is Sb
aTe
3, Si
bSb
cTe
3Or Ge
dSb
eTe
5Wherein: 2≤a≤7,0＜b≤1,2≤c≤7,0＜d≤2,4≤e≤10; The chemical formula of the phase-change material that said non-volatile memory cells uses is Si
mSb
nTe
3Or Si
zGe
xSb
yTe
5Wherein: 2≤m≤5,2≤n≤7,2≤z≤9,0＜x≤2,4≤y≤10.
The present invention also provides the preparation method of a kind of above-mentioned microcontroller with low-power-consumption embedded phase transition storage, comprises the steps:
(1) provide simultaneously growth DRAM to be arranged with hearth electrode and NVM substrate with hearth electrode, said DRAM with hearth electrode and NVM with hearth electrode on, utilize single target rf magnetron sputtering to obtain the rich Sb phase change material film of design thickness;
(2) utilize chemico-mechanical polishing to remove the rich Sb phase-change material of remained on surface;
(3) on film, apply photoresist, exposure imaging only exposes the rich Sb phase-change material part (promptly need implant the phase-change material part of Si) of NVM with the hearth electrode top;
(4) the rich Sb phase-change material etching of exposed portions serve is removed;
(5) utilize once more single target radio-frequency magnetron sputter method NVM with hearth electrode above growth thickness be no more than the rich Sb phase change material film of 10nm;
(6) partly inject the Si ion at NVM with the rich Sb phase-change material above the hearth electrode, form the phase change material film of rich Si;
(7) repeating step (5) and (6) are up to the thickness that obtains needed rich Si phase change material film;
(8) remove photoresist, heat-treat, make the Si element distribute inner the formation evenly of film; Carry out postchannel process, accomplish the device manufacturing.
The chemical formula of said rich Sb phase-change material is Sb
aTe
3, Si
bSb
cTe
3Or Ge
dSb
eTe
5, wherein: 2≤a≤7,0＜b≤1,2≤c≤7,0＜d≤2,4≤e≤10.
The chemical formula of said rich Si phase-change material is Si
mSb
nTe
3Or Si
zGe
xSb
yTe
5, wherein: 2≤m≤5,2≤n≤7,2≤z≤9,0＜x≤2,4≤y≤10.
Preferable, the using plasma immersion ion injects (PIII-Plasma Immersion Ion Implantation) method and injects Si element, the Dc bias DC＞200V in the described Si ion implantation process.
Preferable, in the described Si ion implantation process, use SiH
4And N
2Atmosphere produces the Si plasma, and SiH
4And N
2Volume ratio less than 1%.
Preferable, in the described Si ion implantation process, temperature remains on room temperature to 45 ℃.
Preferable, said heat treatment is carried out in inert atmosphere (like Ar), and heat treatment temperature is 100 ℃～300 ℃, and heat treatment time is 1 minute～30 minutes.
The thickness of the said Si of mixing phase change material film is 50～100nm.
The present invention is directed to single target sputtering technology of COMS; Utilization to the DRAM of low data confining force with phase-change material in injection Si ion; The NVM that obtains the low high data confining force of operating function is with rich Si phase-change material, and the phase-change material of having realized being applied to two kinds of different phase transition storages of DRAM and NVM is prepared in same substrate.Both obtained well behaved SiSbTe or SiGeSbTe phase-change material, reduced the usage quantity of reticle again, reduced technical difficulty and product cost thereby simplified processing step greatly.
Description of drawings
Fig. 1 NVM is with the preparation method's of phase-change storage material schematic flow sheet.
Fig. 2 preparation is greater than the NVM of the 10nm schematic flow sheet with the preparation method of phase-change storage material.
Fig. 3 is the NVM of the present invention preparation sample sketch map after with the phase-change storage material thin film crystallization.
Fig. 4 a-4k is the schematic flow sheet of preparation MCU with low-power-consumption embedded phase transition storage.
Fig. 5 is the test result figure of the fatigue behaviour of the embodiment of the invention 1 obtained rich Si material devices.
Embodiment
The present invention is directed to and have the technical problem that the single target sputter that exists in the COMS technology can not obtain well behaved SiSbTe or SiGeSbTe phase-change material now; A kind of NVM is provided the preparation method with phase-change storage material; This method utilization to the DRAM of low data confining force inject in phase-change material the Si ion prepare hang down the high data confining force of operating function NVM with rich Si phase-change material, obtained well behaved NVM with SiSbTe or SiGeSbTe phase-change material.
The present invention also provides a kind of microcontroller with low-power-consumption embedded phase transition storage and manufacturing approach thereof according to said method; The phase-change material that will be used for DRAM is grown in same substrate simultaneously with the phase-change material that is used for NVM; DRAM and NVM required material and structure on same substrate, have been prepared simultaneously; Reduced the usage quantity of reticle, reduced technical difficulty and product cost thereby simplified processing step greatly.
A kind of MCU provided by the invention uses low-power-consumption embedded phase transition storage; Comprise DRAM cell and non-volatile memory cells; It is characterized in that said DRAM cell and non-volatile memory cells are positioned on the same substrate simultaneously.
Alternatively, the chemical formula of the phase-change material that uses of said DRAM cell is Sb
aTe
3, Si
bSb
cTe
3Or Ge
dSb
eTe
5Wherein: 2≤a≤7,0＜b≤1,2≤c≤7,0＜d≤2,4≤e≤10; The chemical formula of the phase-change material that said non-volatile memory cells uses is Si
mSb
nTe
3Or Si
zGe
xSb
yTe
5Wherein: 2≤m≤5,2≤n≤7,2≤z≤9,0＜x≤2,4≤y≤10.
Below in conjunction with the more complete description the present invention of diagram, preferred embodiment provided by the invention should not be considered to only limit in the embodiment of this elaboration.Reference diagram is a sketch map of the present invention, and the expression among the figure is an illustrative nature, should not be considered to limit scope of the present invention.
Embodiment 1:NVM is with the preparation of rich Si phase change material film
See also Fig. 1, it has shown the schematic flow sheet of NVM of the present invention with the preparation method of phase-change storage material.Shown in 1, said preparation method comprises step:
1) on Semiconductor substrate, utilizes single target rf magnetron sputtering to obtain chemical formula and be Sb
aTe
3, Si
bSb
cTe
3Or Ge
dSb
eTe
5And thickness is no more than the phase change material film of 10nm; Wherein: 2≤a≤7,0＜b≤1,2≤c≤7,0＜d≤2,4≤e≤10;
2) on step 1) gained film, inject the Si ion, the formation chemical formula is Si
mSb
nTe
3Or Si
zGe
xSb
yTe
5Phase change material film; Wherein: 2≤m≤5,2≤n≤7,2≤z≤9,0＜x≤2,4≤y≤10;
3) film that has injected the Si ion is heat-treated, make the Si element distribute, thereby obtain the same phase change material film of component uniform performance inner the formation evenly of film.
Below in conjunction with accompanying drawing 1-3 preparation NVM of the present invention is elaborated with the technical scheme of phase-change material.
At first, execution in step 1): Semiconductor substrate 100 is provided, on Semiconductor substrate 100, utilizes single target rf magnetron sputtering to obtain chemical formula and be Sb
aTe
3And thickness is no more than the phase change material film 101 of 10nm; Wherein: 2≤a≤7 form the structure shown in Fig. 1 a.
Wherein, Said Semiconductor substrate 100 can be for the silicon that is formed with semiconductor device (for example for electrode), the silicon-on-insulator (SOI) that is formed with semiconductor device, or for being formed with the II-VI or the III-V compound semiconductor of semiconductor device, for example Ge, GaAs, GaN, InP etc.
In the present embodiment, Sb
aTe
3Phase change material film 101 is Sb
2Te
3Material; Said single target radio frequency magnetron sputtering method; Can obtain desirable thin-film material layer through modulation process parameter (sputtering power, operating air pressure etc.), owing to adopt the technology of single target rf magnetron sputtering technology growing film to be well known to those skilled in the art, so do not give unnecessary details at this.In addition, in the present embodiment, though be with Sb
2Te
3Material is that preference describes, but the present invention is not limited thereto, those skilled in the art can predict other phase-change materials for example chemical formula be Sb
aTe
3(2≤a≤7), Si
bSb
cTe
3(0＜b≤1,2≤c≤7) or Ge
dSb
eTe
5The phase-change material of (0＜d≤2,4≤e≤10) all can be at this alternative Sb
2Te
3Material.
Secondly, execution in step 2): shown in Fig. 1 b, on phase change material film 101, inject Si ion 102, the formation chemical formula is Si
mSb
nTe
3Phase change material film 103; Wherein: 2≤m≤5,2≤n≤7; The structure of formation shown in Fig. 1 c.
In the present embodiment, phase change material film 103 is Si
2Sb
2Te
3, those skilled in the art can predict other phase-change materials for example chemical formula be Si
mSb
nTe
3(2≤m≤5,2≤n≤7) or Si
zGe
xSb
yTe
5The phase-change material of (2≤z≤9,0＜x≤2,4≤y≤10) all can be at this alternative Si
2Sb
2Te
3Material.Preferably, the using plasma immersion ion injects (PIII-Plasma Immersion Ion Implantation) method and under Dc bias DC＞200V, injects the Si element.Preferred, Dc bias DC is greater than 200V and less than 350V.Preferably, in the Si ion implantation process, reaction atmosphere is SiH
4And N
2,, make SiH through plasmaization
4Decomposite the Si ion, and SiH
4And N
2Volume ratio less than 1%.Preferred, SiH
4And N
2Volume ratio greater than 0.1% and less than 1%.Preferably, in the Si ion implantation process, temperature remains on room temperature to 45 ℃.
At last, execution in step 3): the phase change material film 103 to having injected the Si ion is heat-treated, and makes the Si element distribute inner the formation evenly of film, thereby obtains the same phase change material film 104 of component uniform performance, shown in Fig. 1 d.Preferably, heat treatment is carried out in inert atmosphere (like Ar), and heat treatment temperature is 100 ℃～300 ℃, and heat treatment time is 1 minute～30 minutes.
See also Fig. 2, it has shown the schematic flow sheet of the NVM greater than 10nm of the present invention with the preparation method of phase-change storage material film.For phase change memory device, be to meet the requirements of less than the material thickness of 10nm, the thickness of the phase change material film of phase change memory device is 50～100nm usually.For this reason; The present invention is on above-mentioned preparation method's basis; A kind of NVM greater than 10nm is provided the preparation method with phase-change storage material, promptly in step 2 again) on the formed phase change material film 103, repeatedly repeating step 1) and step 2); (shown in Fig. 2 a, on phase change material film 103, utilize single target rf magnetron sputtering to obtain chemical formula and be Sb
aTe
3And thickness is no more than the phase change material film 101 of 10nm, carries out the Si ion again and injects, and so repeatedly repeats) until the thickness that reaches needed phase-change storage material film, form the structure shown in Fig. 2 b; Again the whole phase change material film that has injected the Si ion is heat-treated step afterwards, obtain Si and the finely dispersed solid solution of rich Sb phase-change material, form the structure shown in Fig. 2 c.
Fig. 3 for the NVM of the present invention preparation with the sample sketch map of phase-change storage material film after the heat treatment crystallization.Among the figure: 301 is crystalline state Sb-Te, and 302 is amorphous state Si; Less than 6nm, crystallite dimension B is less than 5nm apart from A for the phase-change storage material intercrystalline.Fig. 5 is the test result figure of the fatigue behaviour of the obtained rich Si material devices of present embodiment.This phase transition storage " wiping " number of operations of " writing " repeatedly surpasses 10
6Inferior, show the stable performance of this richness Si phase-change material, difficult generation is separated.
Embodiment 2: microcontroller is with the preparation of low-power-consumption embedded phase transition storage
See also Fig. 4 a-4k, it has shown the preparation flow sketch map of MCU of the present invention with low-power-consumption embedded phase transition storage.Be different among the existing MUC earlier and be integrated in the technical scheme on the chip again after DRAM and NVM processed device respectively; The present invention is the phase-change material and the phase-change material that is used for NVM that growth simultaneously is used for DRAM on same substrate; Simultaneously on same substrate, prepare DRAM and NVM, carry out the back again and use low-power-consumption embedded phase transition storage to operation acquisition MCU.
Below in conjunction with accompanying drawing 4a-4k the present invention being prepared microcontroller is elaborated with the technical scheme of low-power-consumption embedded phase transition storage.
Step (1): Fig. 4 a-4b is the preceding working procedure handling process sketch map of substrate.At first, shown in Fig. 4 a, provide preparation DRAM to be arranged with hearth electrode 402 and the semiconductor chip 401 of NVM, insulation between hearth electrode 402 and the hearth electrode 403 with hearth electrode 403.The hearth electrode material is generally aluminium, tungsten, titanium or titanium nitride; Hearth electrode can adopt chemical vapour deposition technique (Chemical Vapor Deposition, CVD) because the CVD method is well known to those skilled in the art, so do not give unnecessary details at this.Secondly, shown in Fig. 4 b, above semiconductor chip 401, form insulating barrier 404, the thickness of insulating barrier 404 is 80nm for the thickness by rich Sb phase-change material in the DRAM memory cell of design demand in the present embodiment; The material of insulating barrier 404 can be silica or silicon nitride (Si for example
3N
4), the technology that forms insulating barrier is well known to those skilled in the art, and for example can adopt sputtering method, so do not give unnecessary details at this.Then, etch away the insulating barrier of hearth electrode 402 and hearth electrode 403 tops, form the structure shown in Fig. 4 b.The method of etching insulating barrier is well known to those skilled in the art, and for example can adopt methods such as wet etching, plasma etching, reactive ion etching, so do not give unnecessary details at this.
In the present embodiment, said semiconductor chip 401 for the silicon that is formed with semiconductor device, the silicon-on-insulator (SOI) that is formed with semiconductor device, or be the II-VI that is formed with semiconductor device or III-V compound semiconductor (for example Ge, GaAs, GaN, InP) etc.Said semiconductor device can be cmos device, and for example, said semiconductor chip 401 can have the structure shown in Fig. 4 c.
Step (2) is shown in Fig. 4 d: on 401 the hearth electrode 402 and hearth electrode 403, utilize single target rf magnetron sputtering to obtain the Sb of design thickness on the semiconductor chip after handling through preceding working procedure
aTe
3Phase change material film 405.
In the present embodiment, Sb
aTe
3Phase change material film 405 is Sb
2Te
3Material; Said single target radio frequency magnetron sputtering method; Can obtain desirable thin-film material layer through modulation process parameter (sputtering power, operating air pressure etc.), owing to adopt the technology of single target rf magnetron sputtering technology growing film to be well known to those skilled in the art, so do not give unnecessary details at this.In addition, in the present embodiment, though be with Sb
2Te
3Material is that preference describes, but the present invention is not limited thereto, those skilled in the art can predict other rich Sb phase-change materials for example chemical formula be Sb
aTe
3(2≤a≤7), Si
bSb
cTe
3(0＜b≤1,2≤c≤7) or Ge
dSb
eTe
5The phase-change material of (0＜d≤2,4≤e≤10) all can be at this alternative Sb
2Te
3Material.
Step (3) is shown in Fig. 4 e: utilize chemico-mechanical polishing to remove the remained on surface phase change film material, form the structure shown in Fig. 4 e; The technology that the remained on surface material is removed in chemico-mechanical polishing is well known to those skilled in the art, so do not give unnecessary details at this.
Step (4) is shown in Fig. 4 f: on insulating barrier 404, apply photoresist 406, and exposure imaging only exposes phase change film material 405 parts (promptly need implant the phase-change material part of Si) of NVM with hearth electrode 403 tops; The structure of formation shown in Fig. 4 f.
Step (5) is shown in Fig. 4 g: phase change film material 405 etchings that expose hearth electrode 403 tops are removed; Lithographic method preferably adopts reactive ion etching method (RIE); The structure of formation shown in Fig. 4 g.Because the reactive ion etching method is well known to those skilled in the art, so do not give unnecessary details at this.
Step (6) is shown in Fig. 4 h: the Sb that utilizes single target radio-frequency magnetron sputter method about 10nm of growth thickness above hearth electrode 403
aTe
3Phase change material film 407; The structure of formation shown in Fig. 4 h.
Step (7) is shown in Fig. 4 i: partly inject the Si ion at NVM with the phase-change material above the electrode, form the phase change material film 408 of rich Si; In the present embodiment, phase change material film 408 is Si
2Sb
2Te
3Material, those skilled in the art can predict other phase-change materials for example chemical formula be Si
mSb
nTe
3(2≤m≤5,2≤n≤7) or Si
zGe
xSb
yTe
5The phase-change material of (2≤z≤9,0＜x≤2,4≤y≤10) all can be at this alternative Si
2Sb
2Te
3Material.Preferably, the using plasma immersion ion injects (PIII-Plasma Immersion Ion Implantation) method and under Dc bias DC＞200V, injects the Si element.Preferred, Dc bias DC is greater than 200V and less than 350V.Preferably, in the Si ion implantation process, use SiH
4And N
2Atmosphere produces the Si plasma, and SiH
4And N
2Volume ratio less than 1%.Preferred, SiH
4And N
2Volume ratio greater than 0.1% and less than 1%.Preferably, in the Si ion implantation process, temperature remains on room temperature to 45 ℃.After the Si ion injects, form the structure shown in Fig. 4 i.
Step (8), repeatedly repeating step (6) and step (7) on the phase change material film 408 of rich Si (are promptly utilized single target rf magnetron sputtering to obtain chemical formula on phase change material film 408 once more and are Sb
aTe
3And the phase change material film of the about 10nm of thickness carries out the Si ion again and injects, and so repeatedly repeats) reach 80nm until the thickness of film 409, form the structure shown in Fig. 4 j.
Step (9) utilizes chemico-mechanical polishing to remove remained on surface phase change film material 407 and photoresist 406, heat-treats again, makes the Si element distribute film 409 inner formation evenly, forms the structure shown in Fig. 4 k.Preferably, heat treatment is carried out in inert atmosphere (like Ar), and heat treatment temperature is 100 ℃～300 ℃, and heat treatment time is 1 minute～30 minutes.Carry out later process, for example on film 405 and film 409, draw top electrode, make peripheral circuit, accomplish the device manufacturing.
The foregoing description is just listed expressivity principle of the present invention and effect is described, but not is used to limit the present invention.Any personnel that are familiar with this technology all can make amendment to the foregoing description under spirit of the present invention and scope.Therefore, rights protection scope of the present invention should be listed like claims.
Claims (14)
1. a microcontroller is used embedded phase change ram, comprises DRAM cell and non-volatile memory cells, it is characterized in that, said DRAM cell and non-volatile memory cells grow on the same substrate simultaneously.
2. microcontroller as claimed in claim 1 is used embedded phase change ram, it is characterized in that, the chemical formula of the phase-change material that said DRAM cell uses is Sb
aTe
3, Si
bSb
cTe
3Or Ge
dSb
eTe
5Wherein: 2≤a≤7,0＜b≤1,2≤c≤7,0＜d≤2,4≤e≤10; The chemical formula of the phase-change material that said non-volatile memory cells uses is Si
mSb
nTe
3Or Si
zGe
xSb
yTe
5Wherein: 2≤m≤5,2≤n≤7,2≤z≤9,0＜x≤2,4≤y≤10.
3. according to claim 1 or claim 2 microcontroller comprises the steps: with the preparation method of embedded phase change ram
(1) provide simultaneously growth DRAM to be arranged with hearth electrode and NVM substrate with hearth electrode, said DRAM with hearth electrode and NVM with hearth electrode on, utilize single target rf magnetron sputtering to obtain the rich Sb phase change material film of design thickness;
(2) utilize chemico-mechanical polishing to remove the rich Sb phase-change material of remained on surface;
(3) on film, apply photoresist, exposure imaging only exposes the rich Sb phase-change material part of NVM with the hearth electrode top;
(4) the rich Sb phase-change material etching of exposed portions serve is removed;
(5) utilize once more single target radio-frequency magnetron sputter method NVM with hearth electrode above growth thickness be no more than the rich Sb phase change material film of 10nm;
(6) partly inject the Si ion at NVM with the rich Sb phase-change material above the hearth electrode, form the phase change material film of rich Si;
(7) repeating step (5) and (6) are up to the thickness that obtains needed rich Si phase change material film;
(8) remove photoresist, heat-treat, make the Si element distribute inner the formation evenly of film; Carry out postchannel process, accomplish the device manufacturing.
4. microcontroller as claimed in claim 3 is characterized in that with the preparation method of embedded phase change ram the chemical formula of said rich Sb phase-change material is Sb
aTe
3, Si
bSb
cTe
3Or Ge
dSb
eTe
5, wherein: 2≤a≤7,0＜b≤1,2≤c≤7,0＜d≤2,4≤e≤10; The chemical formula of said rich Si phase-change material is Si
mSb
nTe
3Or Si
zGe
xSb
yTe
5, wherein: 2≤m≤5,2≤n≤7,2≤z≤9,0＜x≤2,4≤y≤10.
5. microcontroller as claimed in claim 3 is characterized in that with the preparation method of embedded phase change ram the using plasma immersion ion injection method injects Si element, the Dc bias DC＞200V in the described Si ion implantation process.
6. microcontroller as claimed in claim 3 is characterized in that with the preparation method of embedded phase change ram, in the described Si ion implantation process, uses SiH
4And N
2Atmosphere produces the Si plasma, and SiH
4And N
2Volume ratio less than 1%.
7. microcontroller as claimed in claim 3 is characterized in that with the preparation method of embedded phase change ram, and in the described Si ion implantation process, temperature remains on room temperature to 45 ℃.
8. microcontroller as claimed in claim 3 is characterized in that with the preparation method of embedded phase change ram said heat treatment is carried out in inert atmosphere, heat treatment temperature is 100 ℃～300 ℃, and heat treatment time is 1 minute～30 minutes.
9. a NVM comprises the steps: with the preparation method of phase-change storage material
1) on Semiconductor substrate, utilizes single target rf magnetron sputtering to obtain chemical formula and be Sb
aTe
3, Si
bSb
cTe
3Or Ge
dSb
eTe
5And thickness is no more than the phase change material film of 10nm; Wherein: 2≤a≤7,0＜b≤1,2≤c≤7,0＜d≤2,4≤e≤10;
2) on step 1) gained film, inject the Si ion, the formation chemical formula is Si
mSb
nTe
3Or Si
zGe
xSb
yTe
5Phase change material film; Wherein: 2≤m≤5,2≤n≤7,2≤z≤9,0＜x≤2,4≤y≤10;
3) film that has injected the Si ion is heat-treated, make the Si element distribute, thereby obtain the same phase change material film of component uniform performance inner the formation evenly of film.
10. NVM as claimed in claim 9 is characterized in that with the preparation method of phase-change storage material the using plasma immersion ion injection method injects Si element, Dc bias DC＞200V in the described Si ion implantation process.
11. NVM as claimed in claim 9 is characterized in that with the preparation method of phase-change storage material, in the described Si ion implantation process, uses SiH
4And N
2Atmosphere produces the Si plasma, and SiH
4And N
2Volume ratio less than 1%.
12. NVM as claimed in claim 9 is characterized in that with the preparation method of phase-change storage material, in the described Si ion implantation process, temperature remains on room temperature to 45 ℃.
13. NVM as claimed in claim 9 is characterized in that with the preparation method of phase-change storage material said heat treatment is carried out in inert atmosphere, heat treatment temperature is 100 ℃～300 ℃, and heat treatment time is 1 minute～30 minutes.
14. like the preparation method of the arbitrary described NVM of claim 9-13 with phase-change storage material; It is characterized in that, in step 2) on the formed phase change material film, repeating step 1) and step 2); Until the thickness that reaches needed phase-change storage material film, carry out the heat treatment of step 3) again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110453265.3A CN102509732B (en) | 2011-12-29 | 2011-12-29 | Low-power-consumption embedded phase-change memory used in microcontroller, phase-change storing material thereof, and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110453265.3A CN102509732B (en) | 2011-12-29 | 2011-12-29 | Low-power-consumption embedded phase-change memory used in microcontroller, phase-change storing material thereof, and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102509732A true CN102509732A (en) | 2012-06-20 |
| CN102509732B CN102509732B (en) | 2014-06-25 |
Family
ID=46221800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110453265.3A Expired - Fee Related CN102509732B (en) | 2011-12-29 | 2011-12-29 | Low-power-consumption embedded phase-change memory used in microcontroller, phase-change storing material thereof, and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102509732B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129295A (en) * | 2019-12-06 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | Phase change radio frequency switch manufacturing method |
| CN112164748A (en) * | 2020-09-17 | 2021-01-01 | 长江先进存储产业创新中心有限责任公司 | Phase change memory and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1509501A (en) * | 2001-06-15 | 2004-06-30 | Ħ��������˾ | Integration of two memory types |
| US20060013042A1 (en) * | 2004-07-19 | 2006-01-19 | Micron Technology, Inc. | In-service reconfigurable dram and flash memory device |
| US20090201730A1 (en) * | 2008-02-12 | 2009-08-13 | Chip Memory Technology, Inc. | Method and apparatus of operating a non-volatile DRAM |
| CN102157685A (en) * | 2011-01-30 | 2011-08-17 | 中国科学院上海微系统与信息技术研究所 | Phase-change storage material and manufacture method thereof |
-
2011
- 2011-12-29 CN CN201110453265.3A patent/CN102509732B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1509501A (en) * | 2001-06-15 | 2004-06-30 | Ħ��������˾ | Integration of two memory types |
| US20060013042A1 (en) * | 2004-07-19 | 2006-01-19 | Micron Technology, Inc. | In-service reconfigurable dram and flash memory device |
| US20090201730A1 (en) * | 2008-02-12 | 2009-08-13 | Chip Memory Technology, Inc. | Method and apparatus of operating a non-volatile DRAM |
| CN102157685A (en) * | 2011-01-30 | 2011-08-17 | 中国科学院上海微系统与信息技术研究所 | Phase-change storage material and manufacture method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129295A (en) * | 2019-12-06 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | Phase change radio frequency switch manufacturing method |
| CN111129295B (en) * | 2019-12-06 | 2023-09-26 | 中国电子科技集团公司第十三研究所 | Phase-change radio frequency switch manufacturing method |
| CN112164748A (en) * | 2020-09-17 | 2021-01-01 | 长江先进存储产业创新中心有限责任公司 | Phase change memory and manufacturing method thereof |
| CN112164748B (en) * | 2020-09-17 | 2021-12-28 | 长江先进存储产业创新中心有限责任公司 | Phase change memory and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102509732B (en) | 2014-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kim et al. | Improvement of capacity and cyclability of Fe/Si multilayer thin film anodes for lithium rechargeable batteries | |
| CN102134698B (en) | Al-Sb-Te series phase change material for phase change memory and preparation method thereof | |
| CN101312213A (en) | Non-volatile memory unit with nanocrystalline floating gate structure and manufacturing method thereof | |
| CN104900807A (en) | Ga for high-speed low-power phase change memory40Sb60Sb superlattice phase-change thin film material and preparation method thereof | |
| CN102509732B (en) | Low-power-consumption embedded phase-change memory used in microcontroller, phase-change storing material thereof, and preparation method thereof | |
| Aziz et al. | High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient | |
| Ling et al. | Effects of Si doping on phase transition of Ge2Sb2Te5 films by in situ resistance measurements | |
| CN101299454A (en) | Method for preparing nano composite phase-changing material | |
| Lee et al. | Blade-coated sol-gel indium-gallium-zinc-oxide for inverted polymer solar cell | |
| CN102544355B (en) | Phase-change storage material and preparation method thereof as well as storage device provided therewith and preparation method thereof | |
| CN107275480B (en) | A kind of resistance-variable storing device and preparation method thereof of double-layer porous structure amorphous carbon material | |
| CN101533891B (en) | Preparation method of nonvolatile resistance variation memory structure | |
| CN100477095C (en) | Manufacture method of sputtering deposition of high-density Ru nanocrystalline for flash memory | |
| Wu et al. | Development of Sb2Se3 alloys by Ti-doping with ultralow resistance drift and improved microstructure for nonvolatile memory applications | |
| Kim et al. | Effects of N2+ ion implantation on phase transition in Ge2Sb2Te5 films | |
| CN106206942B (en) | Rare earth Er doped and modified GeSb nano film and preparation method thereof | |
| Ahn et al. | Crystallization of amorphous silicon thin films using a viscous nickel solution | |
| CN109267016A (en) | Pulse laser deposits MoS2The method of film | |
| KR101067280B1 (en) | Fabrication of ?????? Nanowires Using ???? Seed Nanowires | |
| US20220181475A1 (en) | Field effect transistor and method for making the same | |
| JP2009016637A (en) | Method of manufacturing semiconductor substrate | |
| CN104810475B (en) | A kind of nanometer composite Ti O2‑Sb2Te phase transiting storing thin-film materials and preparation method thereof | |
| CN101276841A (en) | Nanocrystalline floating gate non-volatile memory and manufacturing method thereof | |
| CN106384783A (en) | ZnO-doped Ge2SbTe5 phase-change storage thin film material and preparation method therefor | |
| CN102709177B (en) | Method for growing high k dielectric on graphene by adopting rhodamine as buffering layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140625 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |