CN102508338A - Optical directional coupler based on lithium niobate photon lines - Google Patents
Optical directional coupler based on lithium niobate photon lines Download PDFInfo
- Publication number
- CN102508338A CN102508338A CN2011103743572A CN201110374357A CN102508338A CN 102508338 A CN102508338 A CN 102508338A CN 2011103743572 A CN2011103743572 A CN 2011103743572A CN 201110374357 A CN201110374357 A CN 201110374357A CN 102508338 A CN102508338 A CN 102508338A
- Authority
- CN
- China
- Prior art keywords
- directional coupler
- waveguides
- lithium niobate
- waveguide
- coupling length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses an optical directional coupler based on lithium niobate (shortened as LN) photon lines. The optical directional coupler based on the lithium niobate photon lines consists of a lithium niobate substrate, a silicon dioxide coating, and LN waveguides which are parallel and symmetrical to each other, wherein the heights of the LN waveguides are 0.73 microns, the top widths of the LN waveguides are 0.4-0.55 microns, and the center distance between the waveguides is 0.6-0.9 microns; the working wavelength is 1.55 microns; parameters of the waveguides applicable to the directional coupler are as follows: the refractive indexes nLN of the LN waveguides are 2.2 and the refractive index nSiO2 in a SiO2 area is 1.44; the waveguides is applicable to a high-integration optical path based on the lithium niobate photon lines; and by using OptiveFDTD commercial software, a curve of the relationship between the coupling length of the directional coupler and the center distance between the two parallel LN optical waveguides, a curve of the relationship between the coupling length and the widths of the LN waveguides, and a curve of the relationship between a noise string and the working wavelength are simulated. The optical directional coupler has the characteristics of super-compact structure and irrelevance with polarization, and has the advantage of resistance to change of the coupling length due to change of structural parameters caused by external environment and pressure change.
Description
Technical field
The invention belongs to one of critical component of photonics technical field, specifically, is a kind of ultra-compact optical directional coupler based on the lithium niobate photon line.
Background technology
LN photon line (that is lithium niobate fiber waveguide)
[1-8]Becoming the candidate that following integrated photon is learned, this be since it to have a dimensional structure little, good electricity-light, sound-light, reach nonlinear optical properties
[9], be subject to rare earth element ion and mix and obtain the laser active material
[10], highly-efficient equipment likely especially (even also possibly realize in appropriate optical power value).Obviously, based on the optical directional coupler of LN photon line be a critical component of the integrated optical circuit that constitutes by the LN photon line.Yet,, up to the present, still have nothing to do in correlative study report based on the optical directional coupler of LN photon line according to the data-searching that the applicant carried out.
Below be the pertinent literature that the inventor retrieves:
【1】P.Rabiei，and?W.H.Steier，“Lithium?niobate?ridge?waveguides?andmodulators?fabricated?using?smart?guide，”Appl.Phys.Lett.Vol.86，no.16，pp.161115-161118，Apr?2005。
【2】D.Djukic，G.Cerda-Pons，R.M.Roth，R.M.Osgood，Jr.，S.Bakhru，andH.Bakhru，“Electro-optically?tunable?second-harmonic-generation?gratings?inion-exfoliated?thin?films?of?periodically?poled?lithium?niobate，”Appl.Phys.Lett.Vol.90，no.17，pp.171116-171119，April?2007。
【3】A.Guarino，G.Poberaj，D.Rezzonico，R.Degl’innocenti，and
“Electro-optically?tumable?microring?resonators?in?lithium?niobate，”Nat.PhotonicsVol.1，no.7，pp.407-410，May?2007。
【4】F.Schrempel，T.Gischkat，H.Hartung，
E.B.Kley，A.
and?W.Wesch，“Ultrathin?membranes?in?x-cut?lithium?niobate，”Opt.Lett.Vol.34，no.9，pp.1426-1428，April?2009。
【5】T.Takaoka，M.Fujimura，and?T.Suhara，“Fabrication?of?ridge?waveguidesin?LiNbO3?thin?film?crystal?by?proton-exchange?accelerated?etching，”Electron.Lett.Vol.45，no.18，pp.940-941(2009)。
【6】G.Poberaj，M.Koechlin，F.Sulser，A.Guarino，J.Hajfler，and
“lon-sliced?lithium?niobate?thin?films?for?active?photonic?devices，”Opt.Mater.Vol.31，no.7，pp.1054-1058(2009)。
【7】G.W.Burr，S.Diziain，and?M.-P.Bernal，“Theoretical?study?of?lithium?niobateslab?waveguides?for?integrated?optics?applications，”Opt.Mater.Vol.31，no.10，pp.1492-1497(2009)。
【8】H.Hu，R.Ricken，and?W.Sohler，“Lithium?niobate?photonic?wires，”Opt.Express，Vol.17，no.26，pp.2426-242681，December?2009。
【9】R.S.Weis，and?T.K.Gaylord，“Lithium?niobate：summary?of?physicalproperties?and?crystal?structure，”Appl.Phys.，A?Mater.Sci.Process.Vol.37，no.4，pp.191-203，March?1985。
【10】W.Sohler，B.Das，D.Dey，S.Reza，H.Suche，and?R.Ricken，“Erbium-dopedlithium?niobate?waveguides?lasers，”in?2005?IEICE?Trans.Electron.E88(C)，pp.990-997。
【11】H.Hu，R.Ricken，and?W.Sohler，Large?area，crystal-bonded?LiNbO3?thinfilms?and?ridge?waveguides?of?high?refractive?index?contrast，Topical?Meeting“Photorefractive?Materials，Effects，and?Devices-Control?of?Light?and?Matter”(PR09)，Bad?Honnef，Germany?2009。On?the?poster，presented?to?PR?09，a?photographof?a?3inch?LNOI?wafer?was?shown.A?manuscript?to?describe?the?LNOI-technologydeveloped?is?in?preparation。
Summary of the invention
The objective of the invention is to, proposed a kind of optical directional coupler based on the LN photon line, this directional coupler can be used to the high integration light path based on the lithium niobate photon line.
In order to realize above-mentioned task.The present invention takes following technical solution to be achieved:
A kind of optical directional coupler based on the LN photon line; It is characterized in that; By at the bottom of the lithium niobate base, the LN waveguide of silicon dioxide coating and parallel symmetry forms, wherein, the height of LN waveguide is 0.73 μ m; The top width of LN waveguide is 0.4 μ m～0.55 μ m, and the centre distance of waveguide is 0.6 μ m～0.9 μ m.
The preparation method of above-mentioned optical directional coupler based on the LN photon line; It is characterized in that; This method is at first made the lithium niobate sample (being abbreviated as LNOI) based on insulator; LNOI comprises the monocrystalline LN layer (being the LN film) of 730 nanometer thickness on silicon dioxide (SiO2) layer that directly is attached on 1.3 micron thick; Silicon dioxide layer is to cut the Z face at the bottom of the lithium niobate base through the Z that is coated in congruence with the plasma enhanced chemical vapor deposition method, and promptly LN film and thickness are that the LN substrate of 0.5mm has congruent crystal orientation; After handling with CMP process (CMP), the surface of LN film reaches the rms roughness of 0.5 nanometer; Photoresistance band then that 1.7 μ m are thick and that 0.5 μ m is wide is used as etch mask.Photoresistance through 1 hour annealing, is followed, in Oxford Plasmalab System100 under 120 ℃; Being coupled inductively with the 100W radio-frequency power becomes plasma and the 70W radio-frequency power is coupled to sample surface, mills etching through 60 minutes argons; The end face polishing promptly gets.
Optical directional coupler based on the LN photon line of the present invention, the technique effect that is brought is:
1, under duct width w=0.5 μ m and operation wavelength λ=1.55 μ m conditions, (is fit to transmission standard-TE (qTE) and standard-TM (qTM) single mode), the coupling length L of directional coupler
cDistance between axles S with two parallel optical waveguides that constitute this directional coupler
cBetween relation curve.
2, at the distance between axles S of two parallel optical waveguides that constitute this directional coupler
cUnder the condition of=0.8 μ m and operation wavelength λ=1.55 μ m, the coupling length L of directional coupler
cAnd constitute the relation curve between the single optical waveguide width w (be fit to transmission standard-TE (qTE) and standard-TM (qTM) single mode) of this directional coupler.
3, at coupling length L
c=5.8 μ m, under the condition of operation wavelength λ=1.55 μ m and optical waveguide width w=0.5 μ m, the string noise of directional coupler and the relation curve of optical wavelength.
4, provided manufacture craft.
Through applicant's emulation and analytical proof, should can be used to high integration light path based on the optical directional coupler of LN photon line based on the lithium niobate photon line.
Description of drawings
Fig. 1 is the view in transverse section based on LN photon line directional coupler of the present invention;
Fig. 2 is under w=0.5 μ m and operation wavelength λ=1.55 μ m conditions, is fit to the coupling length L of accurate TE (be designated as quasi-TE, or qTE) and accurate TM mould (be designated as quasi-TM, or qTM)
cWith the waveguide interval S
cChange curve;
Fig. 3 is respectively under qTE mould and the qTM mould situation at input end, x-y cross section index distribution and main Electric Field Distribution;
Fig. 4 is at S
cL under=0.8 μ m and operation wavelength λ=1.55 μ m conditions
cCurve with the w variation;
Fig. 5 is that string noise with the irrelevant LN photon line directional coupler of polarization is with operation wavelength variation characteristic curve;
Fig. 6 is p
1And p
2, and p
2' test position and index distribution;
Fig. 7 is the manufacture craft synoptic diagram, and wherein, Fig. 7 (a) is based on the lithium niobate sample (LNOI) of insulator, and Fig. 7 (b) is a final sample.
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed description.
Embodiment
1, simulation result and analysis
The optical directional coupler structure that present embodiment provides based on the LN photon line, as shown in Figure 1, it by lithium niobate base at the bottom of, the lithium niobate waveguide of silicon dioxide coating and parallel symmetry forms.
The waveguide parameter that is suitable for this directional coupler is: the refractive index n of LN waveguide
LN=2.2; SiO
2The refractive index n in zone
SiO2=1.44; The height h=0.73 μ m of waveguide, top width w=0.4～0.55 μ m so select to guarantee to realize single mode transport.Constitute the distance between axles S of two parallel optical waveguides (being photon line) of this directional coupler
cSpan be 0.6 μ m～0.9 μ m.Operation wavelength λ=1.55 μ m, SiO
2The bottom surface of layer is connected LN waveguide (being the LN photon line) and SiO with the Z-face that Z-cuts the LN substrate
2Layer end face is connected, and LN substrate and LN photon line have the crystal orientation of omnidirectional.
Utilize Finite-Difference Time-Domain Method business software Optiwave FDTD that structure shown in Figure 1 has been carried out emulation and analysis.(to guarantee single mode transport) calculates respectively when the waveguide interval S under the condition of fixing w=0.5 μ m
cWhen in the scope of 0.6 μ m～0.9 μ m, changing, the coupling length L of corresponding accurate TE mould (be designated as quasi-TE, or qTE) and accurate TM mould (be designated as quasi-TM, or qTM)
c, obtain L through data fitting again
c～S
cRelation curve, as shown in Figure 2.
Fig. 3 is illustrated in input end and is respectively under qTE and the excitation of qTM mould, x-y cross section index distribution and main Electric Field Distribution.
The key property that Fig. 2 showed is: the coupling length L of (1) qTM mould single mode
cCoupling length L greater than qTE mould single mode
c, this is because for the qTE mould, electric field is main along distributing along the x direction; And for the qTM mould; Electric field mainly distributes along the y direction, and is as shown in Figure 3, like this; The coupling that must cause the qTE mould than the coupling of qTM mould come fast, so the coupling length of qTE mould is shorter than the coupling length of qTM mould naturally.Yet, under few cases, there is adverse consequences to take place, promptly the coupling length of qTE mould is longer than the coupling length of qTM mould.This be because, no matter for qTE mould or qTM mould, L
cFor S
cRelation all relevant with sine function, will cause the coupling length L of two kinds of patterns thus inevitably
cCan periodically alternately change.(2) although general trend is coupling length L
cWith the waveguide interval S
cIncrease and increase, yet, at S
cSome zone in, L
cBut remain unchanged.The reason that causes this phenomenon still remains further to be inquired into.(3) especially, work as S
cWhen within 0.6 μ m～0.71 μ m, changing, the coupling length of the coupling length of qTE mould single mode and qTM mould single mode does not only change, and both values almost keep equal.This be because, at S
cThis span in, two parallel LN optical waveguides almost are combined into a new single waveguide, the present invention utilizes this characteristic just, has designed and the optical directional coupler structure based on the LN photon line that polarization is irrelevant.
In order to obtain to be fit to the coupling length L of qTE mould single mode and qTM mould single mode
cAnd the relation between the single LN photon line width w is at fixing S
c=0.8 μ m, duct height h=0.73 μ m, SiO
2Layer thickness=1.3 μ m under the condition of LN substrate thickness=0.5mm and operation wavelength λ=1.55 μ m, makes W change to 0.55 μ m by 0.4 μ m, with the characteristic of business software FDTD design and this structure of emulation, and extracts corresponding coupling length L
cParameter, Fig. 4 is the L that match obtains according to above-mentioned parameter
cCurve with the w variation.
By Fig. 4 and combine Fig. 3 visible, (1) is fit to the coupling length L of qTM mould single mode
cGreater than the coupling length L that is fit to qTE mould single mode
c, this is because for the qTE mould, electric field mainly distributes along the x direction; And for the qTM mould; Electric field mainly distributes along the y direction, and is as shown in Figure 3, like this; The coupling that must cause the qTE mould than the coupling of qTM mould come fast, so the coupling length of qTE mould is shorter than the coupling length of qTM mould naturally.Yet, under few cases, there is adverse consequences to take place, promptly the coupling length of qTE mould is longer than the coupling length of qTM mould.This be because, no matter for qTE mould or qTM mould, L
cFor S
cRelation all relevant with sine function, will cause the coupling length L of two kinds of patterns thus inevitably
cCan alternately change in some way.(2), there is not the polarization of qTE mould single mode, and the polarization of qTM mould single mode is only arranged at w=0.4 μ m.Have only when about w=0.405 μ m, just allow to occur the polarization of qTE mould single mode; (3) coupling length L
cBe tending towards changing with w, yet, in some span of w, L
cDo not change, cause that this phenomenon reason is still waiting further discussion with w.
Visible by Fig. 2 and Fig. 4, obviously,, to a certain extent, have good opposing because the structural parameters S that ambient temperature or pressure cause based on the optical directional coupler of this structure
cThereby variation causes coupling length L with w
cThe characteristic that changes.
Consider, at S
cWhen changing (operation wavelength λ=1.55 μ m) to the scope of about 0.71 μ m, be fit to the coupling length of qTE mould single mode and the coupling length L of suitable qTM mould single mode by 0.6 μ m
cAlmost reach unanimity, like this, just making almost becomes possibility with the irrelevant design and development based on the optical directional coupler of LN photon line of polarization.For this reason, the string noise that also need know this directional coupler is with the operation wavelength distribution character.Fig. 5 shown and utilizes that business software FDTD calculates and the string noise irrelevant LN photon line directional coupler of polarization with operation wavelength variation characteristic curve, with other parameter of this curvilinear correlation is: S
c=0.7 μ m, w=0.5 μ m, h=73 μ m, SiO
2Layer thickness=1.3 μ m, LN substrate thickness=0.5mm, propagation distance=5.8 μ m (i.e. coupling length L when operation wavelength λ=1.55 μ m
c), at this, the string noise defines as follows:
10lg(P
2/P
1)
In the following formula, P
1And P
2Represent luminous power respectively, shown in figure .6 at input end and output terminal.P
1And P
2Optiwave FDTD business software capable of using is obtained, and Fig. 6 is also shown under 0.5h (the i.e. 0.35 μ m) condition, the index distribution of model.
The string noise of known Fig. 5 demonstration and the irrelevant LN photon line directional coupler of polarization is with operation wavelength variation characteristic curve.Figure is visible thus, and the string noise is lower than-and the bandwidth of 13dB is approximately 27nm (for qTE mould single mode) and about 21nm (for qTM mould single mode).
2, manufacture craft
In order to make lithium niobate (LN) photon line directional coupler, must make lithium niobate sample LNOI (shown in Fig. 7 (a)) earlier based on insulator.This sample has comprised the silicon dioxide (SiO that directly is attached on 1.3 micron thick
2) the monocrystalline LN layer (LN film) of 730 nanometer thickness on the layer, SiO
2Layer is to cut the Z face of (thickness is 0.5mm) at the bottom of the lithium niobate base through the Z that is coated in congruence with plasma enhanced chemical vapor deposition (PECVD) method, and promptly LN film and thickness are that the LN substrate of 0.5mm has congruent crystal orientation; The surface of LN film must be with the rms roughness that reaches 0.5 nanometer after chemically mechanical polishing (CMP) PROCESS FOR TREATMENT.
Because refractive index differs big (n
LN=2.2, n
SiO=1.44), the LNOI sample is the slab guide with very strong leaded light performance, therefore is well suited for being used for making the lithium niobate photon line.
Photoetching technique requires: photoresistance (OIR 907-17) band 1.7 μ m are thick and that 0.5 μ m is wide is used as etch mask.In order to improve the selectivity of mask, photoresistance under 120 ℃ through 1 hour annealing.Then, in Oxford PlasmalabSystem100, being coupled inductively with the 100W radio-frequency power becomes plasma (ICP) and the 70W radio-frequency power is coupled to sample surface, and the sample after so handling mills etching, result such as Fig. 7 (b) through 60 minutes argons.
At last, with the end face process polishing meticulously of sample, thereby realize end-fire optically-coupled efficiently.
3, conclusion
The present invention has proposed the ultra-compact optical directional coupler based on the LN photon line first; Coupling length and the relation curve of two parallel optical waveguide distance between axles of this coupling mechanism that utilized the emulation of OptiveFDTD business software; The relation curve of coupling length and LN duct width; The relation curve of string noise and operation wavelength, and provided manufacture craft.The characteristics that this optical directional coupler not only has ultra-compact structure and has nothing to do with polarization, but also have opposing external environment condition and the change of pressure variation causing structural parameters, thus the advantage that causes coupling length to change.
The present invention has received grant of national natural science foundation (fund numbering: 61040064).
Claims (3)
1. the optical directional coupler based on the LN photon line is characterized in that, by at the bottom of the lithium niobate base, the waveguide of silicon dioxide coating and parallel symmetry forms; Wherein, The height of waveguide is 0.73 μ m, and the top width of waveguide is 0.4 μ m～0.55 μ m, and the centre distance of waveguide is 0.6 μ m～0.9 μ m.
2. the optical directional coupler based on the LN photon line as claimed in claim 1 is characterized in that, the top width of described waveguide is 0.5 μ m.
3. the preparation method of claim 1 or 2 described optical directional couplers based on the LN photon line; It is characterized in that; This method is at first made the lithium niobate sample based on insulator; Sample comprises the monocrystalline LN layer of 730 nanometer thickness on the silicon dioxide layer that directly is attached on 1.3 micron thick, and silicon dioxide layer is to cut the Z face at the bottom of the lithium niobate base through the Z that is coated in congruence with the plasma enhanced chemical vapor deposition method, and promptly LN film and thickness are that the LN substrate of 0.5mm has congruent crystal orientation; After handling with CMP process, the surface of LN film reaches the rms roughness of 0.5 nanometer; Photoresistance band then that 1.7 μ m are thick and that 0.5 μ m is wide is used as etch mask, and photoresistance through 1 hour annealing, is followed under 120 ℃; In Oxford PlasmalabSystem100; Being coupled inductively with the 100W radio-frequency power becomes plasma and the 70W radio-frequency power is coupled to sample surface, mills etching through 60 minutes argons; The end face polishing promptly gets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110374357 CN102508338B (en) | 2011-11-22 | 2011-11-22 | Optical directional coupler based on lithium niobate photon lines and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110374357 CN102508338B (en) | 2011-11-22 | 2011-11-22 | Optical directional coupler based on lithium niobate photon lines and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102508338A true CN102508338A (en) | 2012-06-20 |
| CN102508338B CN102508338B (en) | 2013-02-20 |
Family
ID=46220443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110374357 Active CN102508338B (en) | 2011-11-22 | 2011-11-22 | Optical directional coupler based on lithium niobate photon lines and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102508338B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110764185A (en) * | 2019-10-12 | 2020-02-07 | 天津大学 | Preparation method of low-loss lithium niobate thin film optical waveguide |
| CN111290191A (en) * | 2020-02-19 | 2020-06-16 | 联合微电子中心有限责任公司 | Directional coupler and optical switch based on silicon nitride platform |
| CN111487793A (en) * | 2020-04-17 | 2020-08-04 | 中国科学院半导体研究所 | Z-cut L NOI electro-optic modulator capable of improving modulation efficiency and application thereof |
| CN112835142A (en) * | 2019-11-22 | 2021-05-25 | 南京大学 | Lithium niobate thin film waveguide, preparation method thereof and optical parametric oscillator device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000347149A (en) * | 1999-03-26 | 2000-12-15 | Ngk Insulators Ltd | Directional coupler |
| CN2689259Y (en) * | 2004-03-30 | 2005-03-30 | 上海理工大学 | Arsenones-lithium niobate composite waveguide couplers |
| US20050147355A1 (en) * | 2003-07-03 | 2005-07-07 | Vladimir Ilchenko | Optical coupling for whispering-gallery-mode resonators via waveguide gratings |
| US7061023B2 (en) * | 2000-03-02 | 2006-06-13 | Intel Corporation | Integrated optical devices and methods of making such devices |
| CN101620296A (en) * | 2008-06-30 | 2010-01-06 | Jds尤尼弗思公司 | High confinement waveguide on an electro-optic substrate |
-
2011
- 2011-11-22 CN CN 201110374357 patent/CN102508338B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000347149A (en) * | 1999-03-26 | 2000-12-15 | Ngk Insulators Ltd | Directional coupler |
| US7061023B2 (en) * | 2000-03-02 | 2006-06-13 | Intel Corporation | Integrated optical devices and methods of making such devices |
| US20050147355A1 (en) * | 2003-07-03 | 2005-07-07 | Vladimir Ilchenko | Optical coupling for whispering-gallery-mode resonators via waveguide gratings |
| CN2689259Y (en) * | 2004-03-30 | 2005-03-30 | 上海理工大学 | Arsenones-lithium niobate composite waveguide couplers |
| CN101620296A (en) * | 2008-06-30 | 2010-01-06 | Jds尤尼弗思公司 | High confinement waveguide on an electro-optic substrate |
Non-Patent Citations (1)
| Title |
|---|
| 华勇 张春熹: "铌酸锂定向耦合器的优化设计", 《半导体光电》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110764185A (en) * | 2019-10-12 | 2020-02-07 | 天津大学 | Preparation method of low-loss lithium niobate thin film optical waveguide |
| CN110764185B (en) * | 2019-10-12 | 2021-01-01 | 天津大学 | Preparation method of low-loss lithium niobate thin film optical waveguide |
| CN112835142A (en) * | 2019-11-22 | 2021-05-25 | 南京大学 | Lithium niobate thin film waveguide, preparation method thereof and optical parametric oscillator device |
| CN111290191A (en) * | 2020-02-19 | 2020-06-16 | 联合微电子中心有限责任公司 | Directional coupler and optical switch based on silicon nitride platform |
| CN111487793A (en) * | 2020-04-17 | 2020-08-04 | 中国科学院半导体研究所 | Z-cut L NOI electro-optic modulator capable of improving modulation efficiency and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102508338B (en) | 2013-02-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Lu et al. | Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum | |
| Jin et al. | LiNbO 3 thin-film modulators using silicon nitride surface ridge waveguides | |
| US10133097B2 (en) | On-chip optical polarization controller | |
| Li et al. | Waveguides consisting of single-crystal lithium niobate thin film and oxidized titanium stripe | |
| Suzuki et al. | Nonlinear light propagation in chalcogenide photonic crystal slow light waveguides | |
| Chiles et al. | Silicon photonics beyond silicon-on-insulator | |
| CN107209326A (en) | Polarization beam apparatus and spinner apparatus | |
| Cai et al. | A compact photonic crystal micro-cavity on a single-mode lithium niobate photonic wire | |
| Shi et al. | Compact low-birefringence polarization beam splitter using vertical-dual-slot waveguides in silicon carbide integrated platforms | |
| CN108693602A (en) | A kind of three-dimensionally integrated more microcavity resonator, filter devices of silicon nitride and preparation method thereof | |
| CN102508338B (en) | Optical directional coupler based on lithium niobate photon lines and preparation method thereof | |
| Sahin et al. | Enhanced optical nonlinearities in CMOS-compatible ultra-silicon-rich nitride photonic crystal waveguides | |
| Kuruma et al. | Topologically‐protected single‐photon sources with topological slow light photonic crystal waveguides | |
| Younis et al. | Towards low-loss waveguides in SOI and Ge-on-SOI for mid-IR sensing | |
| Mehrabad et al. | Chiral topological add–drop filter for integrated quantum photonic circuits | |
| Wang et al. | A cost-effective edge coupler with high polarization selectivity for thin film lithium niobate modulators | |
| Khorasaninejad et al. | Bend waveguides on silicon nanowire optical waveguide (SNOW) | |
| Courjal et al. | Optimization of linbo 3 photonic crystals: Toward 3d linbo 3 micro-components | |
| Liang et al. | Monolithically integrated electro-optic modulator fabricated on lithium niobate on insulator by photolithography assisted chemo-mechanical etching | |
| Ge et al. | Polarization diversity two-dimensional grating coupler on x-cut lithium niobate on insulator | |
| CN102540332B (en) | Light polarization splitter based on lithium-niobate photon rays | |
| Cui et al. | Temperature dependence of ministop band in double-slots photonic crystal waveguides | |
| Chu et al. | Tunable optical notch filter realized by shifting the photonic bandgap in a silicon photonic crystal line-defect waveguide | |
| De La Rue et al. | Photonic crystal and photonic wire nano-photonics based on silicon-on-insulator | |
| Okamoto et al. | Experimental demonstration of plasmonic racetrack resonators with a trench structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180201 Address after: 710061 Changan South Road, Shaanxi, No. 563, No. Patentee after: Xi'an Xi You Asset Management Limited company Address before: 710021 Wei Guolu, Xi'an, Shaanxi Patentee before: Xi'an Post & Telecommunication College |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180626 Address after: 710119 No. 15 Shanglin Yuan Road, hi tech Zone, Xi'an, Shaanxi. Patentee after: Shaanxi optoelectronic integrated circuit pilot Technology Research Institute Co Ltd Address before: 710061 No. 563 South Changan Road, Shaanxi, Xi'an Patentee before: Xi'an Xi You Asset Management Limited company |