CN102506842A - Embedded high-sensitivity micro gyroscope based on e index semiconductor device - Google Patents
Embedded high-sensitivity micro gyroscope based on e index semiconductor device Download PDFInfo
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- CN102506842A CN102506842A CN2011102997266A CN201110299726A CN102506842A CN 102506842 A CN102506842 A CN 102506842A CN 2011102997266 A CN2011102997266 A CN 2011102997266A CN 201110299726 A CN201110299726 A CN 201110299726A CN 102506842 A CN102506842 A CN 102506842A
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Abstract
The invention relates to a micro gyroscope, specifically discloses an embedded high-sensitivity micro gyroscope based on an e index semiconductor device. The embedded high-sensitivity micro gyroscope solves the problem that the sensitivity of the existing micro gyroscope is too low to meet the requirements on measurement. The embedded high-sensitivity micro gyroscope based on the e index semiconductor device comprises a substrate, the e index semiconductor device, a mass block, a detection beam and a comb structure; and the embedded high-sensitivity micro gyroscope is manufactured by the manufacturing method comprising the following steps of: manufacturing the e index semiconductor device; etching the comb structure; etching a spacing hole between the detection beam and the mass block by ICP (Inductively Coupled Plasma), wherein the etched depth is the thickness of the detection beam; performing deep group etching on the back of the mass block; executing ICP etching on the back of the substrate to form the comb structure, until passing through the substrate, continuously executing ICP etching on the back of the substrate to form the detection beam, and finally releasing the mass block to form the complete micro gyroscope structure. The micro gyroscope of the invention has excellent linearity and high sensitivity, and can be widely used for angular velocity measurement.
Description
Technical field
The present invention relates to gyroscope, be specially a kind of embedded high sensitivity gyroscope based on e index semiconductor devices.
Background technology
Gyroscope is the new high-tech product that the eighties of last century the nineties grows up; It is the core ingredient of inertial navigation system; It is the main measuring instrument of space flight and aviation aircraft; On the army and the people's aircraft, use very extensively, the performance of gyroscope receives the great attention of aerospace field always.General static driven, pressure resistance type and the condenser types of adopting of traditional gyroscope detect output more, and static driven has become a kind of ripe relatively type of drive; But detection mode receives the interference of noise, external environment; It is exactly temperature influence and poor sensitivity that pressure resistance type detects maximum problem, and condenser type detects that then stray capacitance is big, testing circuit is complicated, but affects the sensitivity and practicality of gyroscope greatly; Along with the development of micro-electromechanical technology and the continuous upgrading of inertial navigation system; The upgrading of the detection output of gyroscope is most important, is directly determining the degree of accuracy and the stability of inertial navigation system, is determining China's national defense strength; The army and the people's life is had higher requirement to the application of gyroscope, so we have to ward off in addition new footpath.
E index semiconductor devices is a kind of novel semiconductor devices of setting up based on the remodulates doped structure that grows up the beginning of the eighties in last century.The I-V characteristic of e index semiconductor devices is the e exponential relationship; The various extraneous parameter of this characteristic relation to causing that carrier transport properties (like mobility) changes; Response like the variation of optics, calorifics, mechanical quantity is extremely sensitive, therefore can on suitable working point, realize the highly sensitive detection of external parameter.If e index semiconductor devices is embedded in the micro-nano physical construction, then should be able to realize highly sensitive detection to mechanical quantity and variation thereof, no matter this is aspect relevant traditional sensors or newborn sensor, all will have important application.In recent years, the research of this aspect has caused in the world widely to be paid close attention to, and the research based on the micro-nano mechanical pick-up device of e index semiconductor devices has had relevant report abroad, has shown its highly sensitive characteristic.E index semiconductor devices adopts the remodulates doped structure, at wide band gap semiconducter one side doping donor impurity, undopes in heterojunction narrow band gap one side, and donor impurity ionization produces electronics and positively charged donor impurity center like this.Wide band gap semiconducter and narrow bandgap semiconductor material that e index semiconductor devices uses the n type to mix are usually made; Its advantage is that the fermi level position of heterojunction both sides semiconductor material is different; Can make electronics transfer to lower low bandgap material one side from higher wide bandgap material one side of Fermi level; Alms giver's ionized impurity in the raceway groove is separated, to form two-dimensional electron gas with Cyberspace.Make through extra electric field simultaneously and form quantum well in the raceway groove; Because the de Broglie wave wavelength of electronics and the width of quantum well are comparable; Therefore energy generation quantization on perpendicular to the direction of heterojunction boundary, the motion of two-dimensional electron gas on this direction loses degree of freedom.The electron mobility of two-dimensional electron gas through the non-doping separation layer of growth between channel layer and doped layer, can further improve its electron mobility far above the electron mobility of semiconductor material.Under the low temperature environment, the electrons transport property of two-dimensional electron gas is more superior.Because e index semiconductor devices has utilized quantum size effect; It utilizes the band-edge energy difference of heterojunction that electron motion has been carried out restriction effectively on the one dimension direction; Make the quantization of energy of electronics on its lengthwise movement direction, formed the two-dimensional electron gas of high concentration.When the channel part material is received stress, semiconductor material band structure corresponding the variation taken place, and then cause variation to the electronics restriction, had influence on two-dimensional electron gas in the channel layer, and then made strain potential that variation take place.Utilize this principle to develop the high sensitivity gyroscope that combines with HEMT at present, the piezoresistance coefficient of its HEMT is 3 one magnitude of traditional silicon pressure resistance type, and still along with the raising of measurement requirement, existing HEMT gyroscope can't meet the demands.
Summary of the invention
The present invention provides a kind of embedded high sensitivity gyroscope based on e index semiconductor devices in order to solve because of the existing low problem that can't satisfy measurement requirement of gyroscope sensitivity.
The present invention adopts following technical scheme to realize: based on the embedded high sensitivity gyroscope of e index semiconductor devices, comprise Si base extension 2umGaAs substrate, e index semiconductor devices, mass, detection beam and comb structure; It is to be made by the manufacturing approach that comprises the steps:
(1), the preparation of e index semiconductor devices:
Step 1: the surfaceness of check Si base extension 2umGaAs substrate is also measured its resistivity, mobility electrical parameter; Under the ultravacuum environment, adopt molecular beam epitaxy technique on Si base extension 2um GaAs substrate, grow successively HEMT membraneous material and the RTD membraneous material of parameter as shown in table 1 below, formation RTT membraneous material;
Table 1
(2) on substrate, be coated with one deck photoresist e index semiconductor devices is protected, utilize ICP (inductively coupled plasma etching) lithographic technique to etch comb structure in Si base extension 2umGaAs substrate face;
(3), on substrate, be coated with one deck photoresist, utilize ICP to etch and detect the spacing hole between beam and the mass, the thickness (thickness that detects beam be well known to a person skilled in the art the thickness that existing gyroscope on detects beam) of etching depth for detecting beam;
(4), (being coated with one deck photoresist) protected in the substrate front, substrate back is thinned to 300um, and deep etching is carried out at the mass back side;
(5), from substrate back ICP etching comb structure until penetrating, continue that ICP etching substrate back forms desired thickness and rubber-like detects beam, finally discharge mass, form complete gyroscope structure.
During use, with gyroscope of the present invention under the driving force effect of driving direction, the mass stable oscillation.When receive extraneous perpendicular to driving direction and detection side to angular velocity signal the time, this moment the detection side to the generation coriolis force, when mass receives coriolis force; Mass can produce skew on sensitive direction; Make and detect girder construction and produce deformation, and then make in the e index semiconductor devices channel layer on the sensor construction and produce STRESS VARIATION, the band structure generation respective change of semiconductor material; And then cause two-dimensional electron gas that the restriction of electronics is changed; Have influence on the two-dimensional electron gas in the channel layer, finally can be reflected to the I-V characteristic variations of e index semiconductor devices, but utilize suitable peripheral circuit to convert this variation into measuring-signal; As exporting with forms such as voltage signals; Demarcation can obtain the relation between sensor output signal and the measured angle speed through signal testing, i.e. power electric coupling, conversion characteristic, thus measure extraneous angular velocity signal.
Carried out following test experiments respectively to gyroscope of the present invention and e index semiconductor devices thereof:
1, utilize semiconductor parameter specificity analysis appearance Agilent 4156C that the e index semiconductor devices on the gyroscope of the present invention is carried out the semiconductor parametric test experiment respectively under different grid voltages and different temperatures; Like Fig. 9 and shown in Figure 10, can obtain the I-V family curve of e index semiconductor devices.Test result shows, the faint reduction of the electric current of e index semiconductor devices with the rising of temperature, and the e index performance of semiconductor device on the gyroscope of the present invention is good.
2, utilize semiconductor parameter specificity analysis appearance Agilent 4156C that the HEMT on e index semiconductor devices on the gyroscope of the present invention and the existing HEMT gyroscope is carried out the semiconductor parameter contrast test; Like Figure 11 and shown in Figure 12, obtain output characteristic curve and the transfer characteristic curve comparison diagram of the two.Test result shows; Under the same test condition; The I-V family curve of the HEMT of the I-V family curve of the e index semiconductor devices on the gyroscope of the present invention on the existing HEMT gyroscope has taken place to move on very big; It is more obvious that the saturation region changes, and the former transfer characteristic curve slope is also obviously greater than the latter, so the existing HEMT gyroscope of the present invention has higher sensitivity.
3, gyroscope of the present invention is carried out static state pressurization experiment, the output characteristic curve before and after the pressurization is shown in figure 13.As can be seen from the figure, pressurization back I-V family curve has taken place to move, and this embodies particularly evident in the saturation region.Figure 14 is the output situation of gyroscope of the present invention before and after the static pressurization, and when using probe that mass is applied external force, the I-V family curve squints; And after discharging mass, curve returns to the position before the pressurization too, and this has just well verified good restorative of power electric coupling characteristic and its of the e index semiconductor devices microstructure on the gyroscope of the present invention.
4, gyroscope of the present invention is carried out piezoresistance coefficient gravity experiment: shown in figure 15 for uses semiconductor parameter specificity analysis appearance Agilent 4156C test gyroscope of the present invention the detection side upwards apply power as 0g and-the I-V family curve comparison diagram of e index semiconductor devices during 1g; Carry out the stress simulation analysis through the Ansys simulation software; Maximum stress on the estimation sensor beam, calculate according to following piezoresistance coefficient formula:
Wherein: σ is a stress, and the electric current when I is agravic, Δ I are the electric current changing value.
Utilize changes in resistance under high precision multimeter test-1g and the 0g; But the maximum piezoresistance coefficient of the e index semiconductor devices on the knowledge capital invention gyroscope is than high four one magnitude of pressure-sensitive coefficient of traditional silicon material voltage dependent resistor (VDR); Maximum piezoresistance coefficient than the HEMT on the existing HEMT gyroscope exceeds an one magnitude, explains that the present invention has higher sensitivity than existing HEMT gyroscope.
5, gyroscope of the present invention is carried out the sensory characteristic experiment: 1) driving direction natural frequency test: adopt experimental system (experiment condition: U=1mV shown in figure 16; Δ f=1Hz; F=0Hz～5000Hz; 400 times of enlargement factors), gyroscope of the present invention is fixed on the stable test platform, applies drive signal through the drive circuit board that links to each other with gyroscope input signal end and produce driving force in comb structure; Voltage output signal with drive feedback structure on the glass substrate of high precision multimeter test substrate below; Output signal through demonstrating on the feedback electrode through oscillograph after the filter amplifying processing is shown in figure 17, and the natural frequency that shows said device drive direction is probably about 3000Hz, and is shown in figure 18 through the curve after the Origin match; 2) detection side tests to natural frequency: adopt experimental system (experiment condition: V shown in figure 19
D=2V, V
G=0.6V, f=0Hz～5000Hz, F=20g; 100 times of enlargement factors); On the shaking table that gyroscope of the present invention is fixed on main control system links to each other,, shown in figure 20 through the output signal that demonstrates through oscillograph after the filter amplifying processing through its voltage output signal of high precision multimeter test; Show said device detection side to natural frequency probably about 3200Hz, shown in figure 21 through the curve of Origin match; By three dB bandwidth defined formula: f
W=0.54|f
The detection side to-f
Driving direction|, calculating can this gyrostatic bandwidth be f
W=92Hz; 3) the gyroscope Coriolis effect is tentatively tested: adopt experimental system (experiment condition: U=1mV, f shown in figure 22
Driving direction=3000Hz, enlargement factor is 400 times, V
D=2V, V
G=0.6V; 100 times of enlargement factors), on the three-axle table that gyroscope of the present invention is fixed on main control system links to each other, the voltage output signal that records outputs on the display machines; Through filter amplifying processing; Curve through the Origin match is shown in figure 23, and recording gyrostatic sensitivity is 100.025mV/deg (being slope of a curve), proves absolutely that gyroscope of the present invention can realize highly sensitive detection.
Gyroscope of the present invention has good linearty, high sensitivity; Power electric coupling, the switching mechanism of e index semiconductor devices have effectively been utilized; Solved because of the existing low problem that can't satisfy measurement requirement of gyroscope sensitivity, can be adaptable across angular velocity measurement.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the structural representation of step 3 in the first step of the present invention.
Fig. 3 is the structural representation of step 4 in the first step of the present invention.
Fig. 4 is the structural representation of step 5 in the first step of the present invention.
Fig. 5 is the structural representation of step 6 in the first step of the present invention.
Fig. 6 is the structural representation of step 7 in the first step of the present invention.
Fig. 7 is the structural representation of step 8 in the first step of the present invention.
Fig. 8 is the structural representation of RTT membraneous material among the present invention.
Fig. 9 be under different grid voltages to the present invention in the I-V performance diagram of e index semiconducter device testing.
Figure 10 be under different temperatures to the present invention in the I-V performance diagram of e index semiconducter device testing.
Figure 11 is the output characteristic curve comparison diagram of the present invention and existing HEMT gyroscope.
Figure 12 is the transfer characteristic curve comparison diagram of the present invention and existing HEMT gyroscope.
Figure 13 is the output characteristic curve figure before and after the present invention is carried out pressurizeing when static pressurization is tested.
Figure 14 is a pressurization front and back output situation of the present invention among Figure 13.
Figure 15 is the I-V performance diagram of e index semiconductor devices when the invention detection side is upwards applied 0g with-1g.
Figure 16 is the experimental system figure that driving direction of the present invention is carried out the natural frequency test.
Figure 17 is the feedback loop output signal curve map that records through Figure 16 experimental system.
Figure 18 is to the curve map after the curve Origin match among Figure 17.
Figure 19 is to the experimental system figure that carries out the natural frequency test to detection side of the present invention.
Figure 20 is the output signal curve figure that records through Figure 19 experimental system.
Figure 21 is to the curve map after the curve Origin match among Figure 20.
Figure 22 is the experimental system figure that the present invention is carried out the preliminary test of Coriolis effect.
Figure 23 is the curve map after the output curve diagram Origin match that Figure 22 experimental system is recorded.
Among the figure: 1-Si base extension 2umGaAs substrate; The 2-ohmic contact layer; The 3-double recess; 4-Schottky contacts grid; 5-Si
3N
4Passivation layer; The 6-substrate; 7-e index semiconductor devices; The 8-mass; 9-detects beam; The 10-comb structure.
Embodiment
Based on the embedded high sensitivity gyroscope of e index semiconductor devices, comprise Si base extension 2umGaAs substrate 1, e index semiconductor devices 7, mass 8, detect beam 9 and comb structure 10; It is to be made by the manufacturing approach that comprises the steps:
(1), the preparation of e index semiconductor devices 7:
Step 1: the surfaceness of check Si base extension 2umGaAs substrate 1 is also measured its resistivity, mobility electrical parameter; Under the ultravacuum environment, adopt molecular beam epitaxy technique on Si base extension 2um GaAs substrate 1, grow successively HEMT membraneous material and the RTD membraneous material of parameter as shown in table 1 below, formation RTT membraneous material;
Table 1
(2) on substrate 6, be coated with one deck photoresist e index semiconductor devices 7 is protected, utilize the ICP lithographic technique to etch comb structure 10 in Si base extension 2umGaAs substrate 1 front;
(3), on substrate 6, be coated with one deck photoresist, utilize ICP to etch and detect the spacing hole between beam 9 and the mass 8, etching depth is for detecting the thickness of beam 9;
(4), substrate 6 fronts are protected, substrate 6 thinning back sides carry out deep etching to 300um with mass 8 back sides;
(5), from substrate 6 back side ICP etching comb structures 10 until penetrating, continue that ICP etching substrate 6 back sides form desired thickness and rubber-like detects beam 9, finally discharge mass 8, form complete gyroscope structure.
Claims (1)
1. based on the embedded high sensitivity gyroscope of e index semiconductor devices, comprise Si base extension 2umGaAs substrate (1), e index semiconductor devices (7), mass (8), detect beam (9) and comb structure (10); It is characterized in that: it is to be made by the manufacturing approach that comprises the steps:
(1), the preparation of e index semiconductor devices (7):
Step 1: the surfaceness of check Si base extension 2umGaAs substrate (1) is also measured its resistivity, mobility electrical parameter; Under the ultravacuum environment, adopt molecular beam epitaxy technique on Si base extension 2um GaAs substrate (1), grow successively HEMT membraneous material and the RTD membraneous material of parameter as shown in table 1 below, formation RTT membraneous material;
Table 1
Step 2, with the clean back of the surface clean of RTT membraneous material measure its resistivity, the mobility electrical parameter makes it with a last step in the ratio of resistivity, mobility electrical parameter measurement result of Si base extension 2umGaAs substrate (1) less than an one magnitude; Obtain substrate (6);
Step 3, on substrate (6), be coated with one deck photoresist, etching RTT membraneous material forms the RTT mesa structure;
Step 4, on the RTT table top, be coated with one deck photoresist, etching RTD membraneous material forms RTD table top and HEMT mesa structure;
Step 5, the metallic combination Au-Ge-Ni that evaporation deposition one layer thickness is
on the n-GaAs cap layer of the n-GaAs of RTD table top cap layer and HEMT one side stage face with the arbitrary proportion mixing; Continuing to cover a layer thickness is the metal A u of
; Under 460 ℃ of-560 ℃ of temperature, through forming ohmic contact layer (2) after the 30s alloying;
Step 6, on the HEMT table top, be coated with one deck photoresist, etching forms N
+Groove continues etching and forms the grid groove, thereby obtains double recess (3);
Step 7, the metallic combination Ti-Pd-Au that deposit one deck mixes with arbitrary proportion on the grid groove; Continuing evaporation deposition one layer thickness is the metal A u of
, forms Schottky contacts grid (4);
Step 8, on double recess (3), utilize PECVD deposit one layer thickness to do
Si
3N
4Passivation layer (5) thus Schottky contacts grid (4) are isolated; Obtain e index semiconductor devices (7);
(2) on substrate (6), be coated with one deck photoresist e index semiconductor devices (7) is protected, utilize the ICP lithographic technique to etch comb structure (10) in Si base extension 2umGaAs substrate (1) front;
(3), on substrate (6), be coated with one deck photoresist, utilize ICP to etch to detect the spacing hole between beam (9) and the mass (8), etching depth is the thickness of detection beam (9);
(4), substrate (6) front is protected, substrate (6) thinning back side carries out deep etching to 300um with mass (8) back side;
(5), from substrate (6) back side ICP etching comb structure (10) until penetrating, continue that ICP etching substrate (6) back side forms desired thickness and rubber-like detects beam (9), finally discharge mass (8), form complete gyroscope structure.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103910323A (en) * | 2013-01-09 | 2014-07-09 | 先技股份有限公司 | Micro-electromechanical device |
| TWI574910B (en) * | 2013-01-09 | 2017-03-21 | 先技股份有限公司 | Mems apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040129087A1 (en) * | 2000-08-31 | 2004-07-08 | Nec Laboratories America, Inc. | Extraordinary piezoconductance in inhomogeneous semiconductors |
| CN101270990A (en) * | 2008-05-06 | 2008-09-24 | 中北大学 | Testing apparatus of multi-layer nano-film tunneling micro-gyroscope |
-
2011
- 2011-09-29 CN CN2011102997266A patent/CN102506842B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040129087A1 (en) * | 2000-08-31 | 2004-07-08 | Nec Laboratories America, Inc. | Extraordinary piezoconductance in inhomogeneous semiconductors |
| CN101270990A (en) * | 2008-05-06 | 2008-09-24 | 中北大学 | Testing apparatus of multi-layer nano-film tunneling micro-gyroscope |
Non-Patent Citations (1)
| Title |
|---|
| 石云波等: "基于隧道效应的MEMS陀螺仪的研究", 《压电与声光》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103910323A (en) * | 2013-01-09 | 2014-07-09 | 先技股份有限公司 | Micro-electromechanical device |
| TWI574910B (en) * | 2013-01-09 | 2017-03-21 | 先技股份有限公司 | Mems apparatus |
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