CN102503430A - Method for preparing reaction-sintered silicon carbide ceramic by improved tape casting process - Google Patents
Method for preparing reaction-sintered silicon carbide ceramic by improved tape casting process Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000000919 ceramic Substances 0.000 title claims abstract description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 16
- 238000010345 tape casting Methods 0.000 title claims abstract description 13
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229920001568 phenolic resin Polymers 0.000 claims abstract description 43
- 239000005011 phenolic resin Substances 0.000 claims abstract description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 238000001035 drying Methods 0.000 claims abstract description 10
- 238000005475 siliconizing Methods 0.000 claims abstract description 10
- 238000005470 impregnation Methods 0.000 claims abstract description 7
- 235000015895 biscuits Nutrition 0.000 claims abstract description 6
- 238000000465 moulding Methods 0.000 claims abstract description 4
- 239000011204 carbon fibre-reinforced silicon carbide Substances 0.000 claims description 14
- 239000011148 porous material Substances 0.000 claims description 8
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 4
- KBPLFHHGFOOTCA-UHFFFAOYSA-N caprylic alcohol Natural products CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 claims description 4
- 238000005336 cracking Methods 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims description 2
- -1 acetal modified phenolic resin Chemical class 0.000 claims description 2
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 claims description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N n-Octanol Natural products CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims description 2
- 229920002554 vinyl polymer Polymers 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims 3
- 238000000197 pyrolysis Methods 0.000 claims 2
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000010000 carbonizing Methods 0.000 abstract 1
- 238000005245 sintering Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 238000003763 carbonization Methods 0.000 description 3
- 238000013001 point bending Methods 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
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- 239000002023 wood Substances 0.000 description 2
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- 238000005266 casting Methods 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
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- 238000007711 solidification Methods 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
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Abstract
本发明一种改进流延成型工艺制备反应烧结碳化硅陶瓷的方法,涉及将由流延膜脱粘后的多孔素坯中真空浸渍酚醛树脂溶液,干燥、碳化后再经反应渗硅得到致密的反应烧结碳化硅陶瓷。本发明包含如下步骤:先用流延成型的方法制备得到多孔的含碳素坯;再将多孔素坯,真空浸渍到酚醛树脂溶液中,浸渍完全后将素坯干燥、碳化,最后将碳化后的素坯在真空炉中反应渗硅,得到致密的反应烧结碳化硅陶瓷。本发明以流延成型工艺用于反应烧结碳化硅素坯的制备为基础,对该工艺中存在的游离硅含量高的不足进行改进,不仅保持了流延工艺可叠层设计的优点,而且有效地降低了反应烧结陶瓷中残留Si的含量以及显著提高烧结体的抗弯强度。
The invention discloses a method for preparing reaction sintered silicon carbide ceramics by improving the cast molding process, which involves vacuum impregnating a phenolic resin solution in a porous biscuit after being debonded from a cast film, drying, carbonizing, and then reacting and siliconizing to obtain a dense reaction Sintered silicon carbide ceramics. The present invention comprises the following steps: first prepare a porous carbon-containing green body by tape casting method; then vacuum impregnate the porous green body into a phenolic resin solution, dry and carbonize the green body after complete impregnation, and finally carbonize the The green body is reacted siliconized in a vacuum furnace to obtain a dense reaction sintered silicon carbide ceramic. The present invention is based on the tape-casting process for the preparation of reaction sintered silicon carbide biscuits, and improves the problem of high free silicon content in the process, not only maintaining the advantages of the tape-casting process's stackable design, but also effectively The content of residual Si in the reaction sintered ceramics is reduced and the bending strength of the sintered body is significantly improved.
Description
技术领域 technical field
本发明涉及一种采用改进对流延成型法制备反应烧结碳化硅陶瓷工艺改进的方法,属于陶瓷制备领域。The invention relates to an improved method for preparing reaction sintered silicon carbide ceramics by adopting an improved convective casting method, which belongs to the field of ceramic preparation.
背景技术 Background technique
流延成型是一种胶态成型的方法,用该方法制得的陶瓷材料具有结构均匀、可设计、可靠性高等特点,目前已经广泛应用于制备薄的平板陶瓷材料,特别在多层复合材料中优势更加明显。在先期的实验工作中,利用流延成型方法已经制备得到了微观结构均匀、孔径分布窄的含碳多孔素坯,并经高温液相渗硅得到致密的反应烧结碳化硅陶瓷。当素坯中C/SiC比值为3∶10的时候,反应烧结后的陶瓷三点抗弯强度高达410±14MPa。Tape casting is a method of colloidal molding. The ceramic material prepared by this method has the characteristics of uniform structure, designability, and high reliability. It has been widely used in the preparation of thin flat ceramic materials, especially in multilayer composite materials. The advantages are more obvious. In the previous experimental work, carbon-containing porous green bodies with uniform microstructure and narrow pore size distribution have been prepared by tape casting method, and dense reaction-sintered silicon carbide ceramics have been obtained by high-temperature liquid phase siliconizing. When the ratio of C/SiC in the green body is 3:10, the three-point bending strength of the ceramic after reaction sintering is as high as 410±14MPa.
然而,该种方法得到的陶瓷烧结体中残留的游离硅含量较高,当素坯中C/SiC比值为3∶10的时候,反应烧结后游离硅含量为37vol%。而过量游离Si的存在不仅限制反应烧结碳化硅陶瓷的使用温度,而且不利于陶瓷力学性能的提高。因此需要寻求一种方法能有效降低反应烧结体中游离硅的含量并进一步提高烧结体的抗弯强度。However, the residual free silicon content in the ceramic sintered body obtained by this method is relatively high. When the C/SiC ratio in the green body is 3:10, the free silicon content after reaction sintering is 37vol%. The existence of excess free Si not only limits the service temperature of reaction sintered silicon carbide ceramics, but also is not conducive to the improvement of the mechanical properties of ceramics. Therefore, it is necessary to seek a method that can effectively reduce the content of free silicon in the reaction sintered body and further improve the flexural strength of the sintered body.
从已有的文献报道,降低反应烧结碳化硅陶瓷烧结体中游离硅含量可以从两方面考虑,一是降低素坯的开口孔隙率;二是提高素坯中碳的含量。但无论选择哪种方法,都要考虑到液相渗硅是一个放热以及体积膨胀的过程,碳含量的增加也伴随着更大的热应力以及体积膨胀。如果素坯不具有一定的强度,则液相渗硅后很容易在烧结体中形成裂纹,进而使陶瓷体强度降低。先前的工作已表明,当素坯中C∶SiC增加到5∶10时,烧结体中出现裂纹状缺陷,抗弯强度也降低到225±79MPa。According to the existing literature reports, reducing the free silicon content in the reaction sintered silicon carbide ceramic sintered body can be considered from two aspects, one is to reduce the open porosity of the green body; the other is to increase the carbon content in the green body. But no matter which method is chosen, it must be considered that liquid phase siliconizing is a process of exothermic and volume expansion, and the increase of carbon content is also accompanied by greater thermal stress and volume expansion. If the green body does not have a certain strength, it is easy to form cracks in the sintered body after liquid-phase siliconizing, thereby reducing the strength of the ceramic body. Previous work has shown that when the C: SiC in the green body is increased to 5:10, crack-like defects appear in the sintered body, and the bending strength also decreases to 225±79MPa.
在增强多孔材料方面,许多研究者们采取浸渍树脂的方法,例如,Furuno等人(Furuno,T.,Imamura,Y.,Kajita,分钟.,2004.Wood Sci.Tec分钟nol.37,349-361.)将酚醛树脂浸渍到细胞壁中,发现这种方法能显著提高木材的力学强度。In terms of strengthening porous materials, many researchers have adopted the method of impregnating resins, for example, Furuno et al. (Furuno, T., Imamura, Y., Kajita, min., 2004.Wood Sci. 361.) impregnated phenolic resin into the cell walls and found that this method significantly increased the mechanical strength of wood.
酚醛树脂是一种多功能、且能与多种有机或无机填料相容的物质,其经常被用作粘结剂,并且交联后可以提供一定的机械强度。另外,酚醛树脂在大约为1000℃的真空或者惰性气体条件下,会分解留下约55wt%的碳,这对反应烧结也是有利的。Phenolic resin is a multifunctional substance compatible with various organic or inorganic fillers. It is often used as a binder and can provide certain mechanical strength after crosslinking. In addition, phenolic resin will decompose and leave about 55wt% carbon under vacuum or inert gas conditions at about 1000°C, which is also beneficial to reaction sintering.
在先前的工作中,本申请的发明人应用流延成型法制备了结构均匀的含碳多孔素坯并得到了力学性能良好的反应烧结碳化硅陶瓷。在此基础上,本发明拟进一步对多孔素坯进行真空浸渍酚醛树脂溶液,不仅有效地提高了素坯的强度和碳含量,而且又降低了素坯的开口孔隙率,最终降低烧结体的游离硅含量并增强了烧结体的力学强度。目前国内外关于真空浸渍酚醛树脂溶液到含碳多孔素坯再进行反应渗硅的工艺则鲜有报道。In the previous work, the inventors of the present application prepared a carbon-containing porous green compact with uniform structure and obtained reaction-sintered silicon carbide ceramics with good mechanical properties by tape casting method. On this basis, the present invention intends to further vacuum-impregnate the porous green body with phenolic resin solution, which not only effectively improves the strength and carbon content of the green body, but also reduces the open porosity of the green body, and finally reduces the free Silicon content and enhance the mechanical strength of the sintered body. At present, there are few reports at home and abroad on the process of vacuum impregnating phenolic resin solution into carbon-containing porous green body and then performing reaction siliconizing.
发明内容 Contents of the invention
本发明的目的在于提供一种采用改进流延成型工艺制备反应烧结碳化硅陶瓷的方法。本发明是针对流延成型工艺制备反应烧结碳化硅陶瓷工艺中游离硅含量高、抗弯强度相对较低的不足,提供一种简单、有效的方法对其进行改进。其特征在于:采用真空浸渍的方法,将酚醛树脂溶液浸渍到由流延膜叠层、脱粘后得到的多孔素坯中,酚醛树脂固化后则残留在孔壁上;再经中温脱粘,酚醛树脂裂解后形成的无定形碳残留在素坯中,不仅降低了素坯的开口孔隙率而且增加了素坯中的碳含量。由此得到的素坯进行液相渗硅后得到的反应烧结碳化硅陶瓷相对于未浸渍酚醛树脂的样品,烧结体中游离硅含量大大降低,而且抗弯强度明显增加。The purpose of the present invention is to provide a method for preparing reaction sintered silicon carbide ceramics by adopting an improved tape casting process. The invention aims at the disadvantages of high content of free silicon and relatively low bending strength in the process of preparing reaction sintered silicon carbide ceramics by tape casting process, and provides a simple and effective method to improve it. It is characterized in that: the method of vacuum impregnation is used to impregnate the phenolic resin solution into the porous biscuit obtained after lamination and debonding of the cast film, and the phenolic resin remains on the hole wall after solidification; and then debonded at medium temperature, The amorphous carbon formed after the cracking of phenolic resin remains in the green body, which not only reduces the open porosity of the green body but also increases the carbon content in the green body. Compared with the sample not impregnated with phenolic resin, the free silicon content in the sintered body of the reaction sintered silicon carbide ceramics obtained after liquid-phase siliconizing the green body obtained is greatly reduced, and the bending strength is significantly increased.
本发明采用的具体工艺包括如下步骤:The concrete technology that the present invention adopts comprises the steps:
1)用流延成型法制备不同C/SiC比、孔径分布均匀的多孔含碳素坯;1) Prepare porous carbon-containing blanks with different C/SiC ratios and uniform pore size distribution by tape casting;
2)将上述所得到的多孔含碳素坯真空浸渍在不同浓度酚醛树脂溶液中;2) Vacuum impregnating the porous carbon-containing blank obtained above in different concentrations of phenolic resin solutions;
3)浸渍完全后,将浸渍有酚醛树脂溶液的含碳多孔素坯表面多余酚醛溶液用滤纸吸干;3) After the impregnation is complete, the excess phenolic solution on the surface of the carbon-containing porous biscuit impregnated with the phenolic resin solution is blotted dry with filter paper;
4)将表面有多余酚醛溶液的素坯吸干后,放置到干燥箱中干燥使酚醛树脂固化;4) after drying the green body with excess phenolic solution on the surface, place it in a drying oven to dry to make the phenolic resin solidify;
5)将干燥后的素坯在真空条件下升温使酚醛树脂裂解成无定形碳;5) heating up the dried green body under vacuum conditions to crack the phenolic resin into amorphous carbon;
6)将得到的含碳的素坯放置在硅片上,真空条件下反应渗硅,反应温度在1420-1550℃之间。6) Place the obtained carbon-containing green body on a silicon wafer, and react siliconizing under vacuum conditions, and the reaction temperature is between 1420-1550°C.
上述步骤1)中的C/SiC质量比介于1∶10-10∶1之间;The C/SiC mass ratio in the above step 1) is between 1:10-10:1;
较佳的,所述步骤1)中C/SiC质量比介于在1.4-7∶1之间;Preferably, the C/SiC mass ratio in step 1) is between 1.4-7:1;
所述步骤2)中的酚醛树脂为苯酚甲醛树脂、聚乙烯醇缩醛改性酚醛树脂、聚酰胺改性酚醛树脂、环氧改性酚醛树脂、有机硅改性树脂、以及其他改性型树脂等;The phenolic resin in the step 2) is phenol formaldehyde resin, polyvinyl acetal modified phenolic resin, polyamide modified phenolic resin, epoxy modified phenolic resin, organosilicon modified resin, and other modified resins wait;
所述的酚醛树脂有机溶液为乙醇、异丙醇、正丁醇、正辛醇、丙酮、丁酮、甲苯、二甲苯、正己烷、环己烷有机溶剂中的任意一种;Described phenolic resin organic solution is any one in ethanol, isopropanol, n-butanol, n-octanol, acetone, methyl ethyl ketone, toluene, xylene, normal hexane, hexanaphthene organic solvent;
较佳的,所述的酚醛树脂的有机溶液浓度为5-70wt%,优先10wt%-60wt%;Preferably, the concentration of the organic solution of the phenolic resin is 5-70wt%, preferably 10wt%-60wt%;
较佳的,所述步骤2)中的真空浸渍是先对多孔素坯真空抽气,然后再往多孔素坯中加入酚醛树脂溶液;使多孔素坯真空浸渍在酚醛树脂的溶液。Preferably, the vacuum impregnation in step 2) is to vacuum the porous green body first, and then add the phenolic resin solution to the porous green body; vacuum impregnate the porous green body in the phenolic resin solution.
较佳的,所述步骤2)中的真空度为低于0.1MPa;Preferably, the vacuum degree in the step 2) is lower than 0.1MPa;
较佳的,所述步骤2)中的真空抽气时间为2-30分钟;Preferably, the vacuum pumping time in the step 2) is 2-30 minutes;
较佳的,所述步骤4)中干燥烘箱温度为50-170℃之间,优先为70-160℃;Preferably, the drying oven temperature in step 4) is between 50-170°C, preferably 70-160°C;
较佳的,所述步骤4)中干燥的时间为2-72小时,优先为2-24小时;Preferably, the drying time in step 4) is 2-72 hours, preferably 2-24 hours;
较佳的,所述步骤5)中升温速率为低于10℃/分钟,优选为0.3-5℃/分钟;Preferably, the heating rate in step 5) is lower than 10°C/min, preferably 0.3-5°C/min;
较佳的,所述步骤5)中裂解温度为700℃-1200℃,优选为800-1000℃;升温速率小于10℃/分钟;Preferably, the cracking temperature in step 5) is 700°C-1200°C, preferably 800-1000°C; the heating rate is less than 10°C/min;
较佳的,所述步骤5)中保温时间为10-300分钟,优选为10-120分钟;Preferably, the heat preservation time in the step 5) is 10-300 minutes, preferably 10-120 minutes;
较佳的,所述步骤6)中反应渗硅在碳管炉中完成,真空度为1-20Pa之间。Preferably, the reactive siliconizing in step 6) is completed in a carbon tube furnace with a vacuum of 1-20Pa.
上述步骤2)到步骤5)中所述工艺为一个周期,该周期可只进行一次也可重复多次。The process described in the above step 2) to step 5) is a cycle, which can be performed only once or repeated many times.
本发明以流延成型工艺用于反应烧结碳化硅素坯的制备为基础,对该工艺中存在的游离硅含量高的不足进行改进,不仅保持了流延工艺可叠层设计的优点,而且有效地降低了反应烧结陶瓷中残留Si的含量以及显著提高烧结体的抗弯强度。The present invention is based on the tape-casting process for the preparation of reaction sintered silicon carbide biscuits, and improves the problem of high free silicon content in the process, not only maintaining the advantages of the tape-casting process's stackable design, but also effectively The content of residual Si in the reaction sintered ceramics is reduced and the bending strength of the sintered body is significantly improved.
附图说明 Description of drawings
图1为实施例2中提到的素坯在浸渍酚醛树脂前后的微观结构比较。其中(a)是素坯浸渍酚醛树脂前的微观结构以及孔径分布,(b)为素坯浸渍酚醛树脂后的微观结构以及孔径分布。Figure 1 is a comparison of the microstructure of the green body mentioned in Example 2 before and after impregnation with phenolic resin. Wherein (a) is the microstructure and pore size distribution before the green body is impregnated with phenolic resin, and (b) is the microscopic structure and pore size distribution after the green body is impregnated with phenolic resin.
具体实施方式Detailed ways
下面通过具体的实例,对本发明予以进一步说明:Below by concrete example, the present invention is further described:
对比例1:将C/SiC比为3∶10的流延膜叠层后经500℃脱粘,制备得到的多孔素坯的密度与碳含量分别为1.43g/cm3、24wt%。将该素坯再经1450℃/30分钟渗硅后,得到的烧结体密度为2.89g/cm3,游离硅含量为37vol%,三点抗弯强度为410±14MPa。Comparative Example 1: The density and carbon content of the prepared porous green body were 1.43g/cm 3 and 24wt%, respectively, by laminating cast films with a C/SiC ratio of 3:10 and debonding at 500°C. After siliconizing the green compact at 1450°C/30 minutes, the obtained sintered body has a density of 2.89g/cm 3 , a content of free silicon of 37vol%, and a three-point bending strength of 410±14MPa.
实施例1:将C/SiC比为3∶10的多孔素坯,在真空度为0.1MPa条件下浸渍浓度为30wt%的酚醛树脂溶液,在80℃干燥12小时再以升温速率5℃/分钟至800℃/1小时碳化后,素坯的密度与碳含量分别为1.57g/cm3、25wt%,相对于未浸渍酚醛树脂之前素坯增加量分别为10%以及4%。Example 1: A porous green body with a C/SiC ratio of 3:10 was impregnated with a phenolic resin solution with a concentration of 30 wt% at a vacuum of 0.1 MPa, dried at 80°C for 12 hours, and then heated at a rate of 5°C/min After carbonization at 800°C/1 hour, the density and carbon content of the green body were 1.57g/cm 3 and 25wt%, respectively, which were 10% and 4% higher than those before the green body was impregnated with phenolic resin.
实施例2:将C/SiC比为3∶10的多孔素坯,在真空度为0.1MPa条件下浸渍浓度为50wt%的酚醛树脂溶液,在80℃干燥12小时再以升温速率5℃/分钟至800℃/1小时碳化后,素坯的密度与碳含量分别为1.60g/cm3、26wt%,相对于未浸渍酚醛树脂之前素坯增加量分别为11%以及8%,浸渍前后的微观结构如图1。可以看出,浸渍酚醛树脂之后的素坯仍然能保持连通的孔结构,而且仍然保持窄的孔径分布。Example 2: A porous green body with a C/SiC ratio of 3:10 was impregnated with a 50 wt% phenolic resin solution at a vacuum of 0.1 MPa, dried at 80°C for 12 hours and then heated at a rate of 5°C/min After carbonization at 800°C/1 hour, the density and carbon content of the green body are 1.60g/cm 3 and 26wt%, respectively, and the increase of the green body before impregnating phenolic resin is 11% and 8%, respectively. The structure is shown in Figure 1. It can be seen that the green body after impregnated with phenolic resin can still maintain a connected pore structure, and still maintain a narrow pore size distribution.
实施例3:将C/SiC比为1.4∶10的多孔素坯,在真空度为0.1MPa条件下浸渍浓度为50wt%的酚醛树脂溶液,然后在80℃干燥12小时再以升温速率5℃/分钟至800℃/1小时碳化。之后将碳化后的多孔素坯再在真空度为6Pa的碳管炉中经1450℃/30分钟反应渗硅,得到的烧结体三点抗弯强度为430±45MPa,硅含量为24vol%。相对于未浸渍酚醛树脂(对比例)的素坯烧结后的强度值增加28%,游离硅含量降低44%。Example 3: A porous green body with a C/SiC ratio of 1.4:10 is impregnated with a phenolic resin solution with a concentration of 50 wt% under a vacuum of 0.1 MPa, then dried at 80°C for 12 hours and then heated at a rate of 5°C/ minutes to 800°C/1 hour for carbonization. Afterwards, the carbonized porous green body was reacted and siliconized in a carbon tube furnace with a vacuum degree of 6Pa at 1450°C/30 minutes, and the three-point bending strength of the obtained sintered body was 430±45MPa, and the silicon content was 24vol%. Compared with the sintered green compact not impregnated with phenolic resin (comparative example), the strength value after sintering increased by 28%, and the content of free silicon decreased by 44%.
实施例4:将C/SiC比为2∶10的多孔素坯,浸渍浓度为50wt%的酚醛树脂溶液,然后同实施例4中步骤干燥、碳化、反应渗硅,得到的烧结体三点抗弯强度为549±86MPa,硅含量为20vol%。相对于未浸渍酚醛树脂(对比例)的素坯烧结后的强度值增加50%,游离硅含量降低49%。Example 4: A porous green body with a C/SiC ratio of 2:10 is impregnated with a phenolic resin solution with a concentration of 50 wt%, and then dried, carbonized, and siliconized in the same manner as in Example 4, and the obtained sintered body is three-point resistant. The bending strength is 549±86MPa, and the silicon content is 20vol%. Compared with the sintered green compact not impregnated with phenolic resin (comparative example), the strength value after sintering increases by 50%, and the content of free silicon decreases by 49%.
实施例5:将C/SiC比为3∶10的多孔素坯,浸渍浓度为50wt%的酚醛树脂溶液,然后同实施例4中步骤干燥、碳化、反应渗硅,得到的烧结体三点抗弯强度为598±112MPa,硅含量为17vol%。相对于未浸渍酚醛树脂(对比例)的素坯烧结后的强度值增加46%,游离硅含量降低54%。Example 5: The porous green body with a C/SiC ratio of 3:10 is impregnated with a phenolic resin solution with a concentration of 50 wt%, and then dried, carbonized, and siliconized in the same manner as in Example 4, and the obtained sintered body is three-point resistant. The bending strength is 598±112MPa, and the silicon content is 17vol%. Compared with the sintered green compact not impregnated with phenolic resin (comparative example), the strength value after sintering increased by 46%, and the content of free silicon decreased by 54%.
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103980003A (en) * | 2014-05-27 | 2014-08-13 | 彭达鸿 | Method for preparing silicified graphite via vacuum vapor deposition reaction method |
CN105254306A (en) * | 2015-09-30 | 2016-01-20 | 西北工业大学 | Method for preparing high-thermal-conductivity silicon nitride ceramics |
CN111132951A (en) * | 2017-09-28 | 2020-05-08 | 西格里碳素欧洲公司 | Ceramic component |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101089217A (en) * | 2007-07-19 | 2007-12-19 | 西安明科微电子材料有限公司 | Middle volume fraction aluminium silicon-carbide metal-base composite and method for preparing product |
CN101182233A (en) * | 2007-11-12 | 2008-05-21 | 中国科学院上海硅酸盐研究所 | Gradient porous ceramic membrane and its preparation method |
CN101503297A (en) * | 2009-02-06 | 2009-08-12 | 中国计量学院 | Tape casting preparation for gradient material in rotating magnetic field |
CN101798182A (en) * | 2010-02-04 | 2010-08-11 | 西北工业大学 | Preparation method of laminated ceramic composite |
CN102180674A (en) * | 2011-01-31 | 2011-09-14 | 中国科学院上海硅酸盐研究所 | Preparation method of reaction-sintered SiC ceramic |
-
2011
- 2011-09-23 CN CN 201110302416 patent/CN102503430B/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101089217A (en) * | 2007-07-19 | 2007-12-19 | 西安明科微电子材料有限公司 | Middle volume fraction aluminium silicon-carbide metal-base composite and method for preparing product |
CN101182233A (en) * | 2007-11-12 | 2008-05-21 | 中国科学院上海硅酸盐研究所 | Gradient porous ceramic membrane and its preparation method |
CN101503297A (en) * | 2009-02-06 | 2009-08-12 | 中国计量学院 | Tape casting preparation for gradient material in rotating magnetic field |
CN101798182A (en) * | 2010-02-04 | 2010-08-11 | 西北工业大学 | Preparation method of laminated ceramic composite |
CN102180674A (en) * | 2011-01-31 | 2011-09-14 | 中国科学院上海硅酸盐研究所 | Preparation method of reaction-sintered SiC ceramic |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103980003A (en) * | 2014-05-27 | 2014-08-13 | 彭达鸿 | Method for preparing silicified graphite via vacuum vapor deposition reaction method |
CN103980003B (en) * | 2014-05-27 | 2015-10-28 | 彭达鸿 | Vacuum vapor deposition reaction method prepares the method for silicated graphite |
CN105254306A (en) * | 2015-09-30 | 2016-01-20 | 西北工业大学 | Method for preparing high-thermal-conductivity silicon nitride ceramics |
CN111132951A (en) * | 2017-09-28 | 2020-05-08 | 西格里碳素欧洲公司 | Ceramic component |
CN111716494A (en) * | 2020-06-17 | 2020-09-29 | 宁波伏尔肯科技股份有限公司 | Method for preparing layered complex phase ceramic by using reaction sintering method |
CN114394844A (en) * | 2021-12-28 | 2022-04-26 | 华中科技大学 | Method for preparing silicon carbide ceramic by 3D printing of waste and silicon carbide ceramic |
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