CN102503357A - Premelt crystallization method of high-purity alpha-alumina - Google Patents
Premelt crystallization method of high-purity alpha-alumina Download PDFInfo
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- CN102503357A CN102503357A CN2011103305879A CN201110330587A CN102503357A CN 102503357 A CN102503357 A CN 102503357A CN 2011103305879 A CN2011103305879 A CN 2011103305879A CN 201110330587 A CN201110330587 A CN 201110330587A CN 102503357 A CN102503357 A CN 102503357A
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Abstract
A premelt crystallization method of high-purity alpha-alumina relates to the technical field of premelt crystallization technology of high-purity materials. High-purity alpha-alumina micro powder is put in a metal cold melting pot with an inductance coil distributed on the periphery of the metal cold melting pot, oxyhydrogen flame is led in the position above the high-purity alpha-alumina micro powder to directly heat partial high-purity alpha-alumina micro powder, when the partial high-purity alpha-alumina micro powder melts to produce induction current, then the oxyhydrogen flame is removed, and a melt is cooled and solidified to obtain high-purity alpha-alumina premelt blocks after the high-purity alpha-alumina micro powder is completely melted. The premelt crystallization method of the high-purity alpha-alumina is simple and reasonable in process, easy to control, free of interface of other impurities in the crystallization process and capable of keeping high purity of the alpha-alumina, and the premelt crystallization method can effectively remove residual gas in the micro powder. The premelt crystallization method is favorable to achievement of continuous feeding and crystallization, compared with the oxyhydrogen flame, the heating mode of the premelt crystallization method saves 30% energy, and output improves for 5 times.
Description
Technical field
The present invention relates to the premelt crystallization processes technical field of high-purity material.
Background technology
High-purity а-aluminum oxide can be used for producing sapphire and since high-purity а-aluminum oxide for particle diameter has only the micro mist of 0.1～0.5 μ m, proportion is little (to be about 0.25g/cm
3); In order to enhance productivity; The charging capacity of high-purity а-aluminum oxide when strengthening each sapphire and producing, some manufacturing enterprise requires to propose high-purity а-aluminum oxide is carried out the requirement of secondary processing, promptly requires high-purity а-alumina powder is processed the bigger crystalline product of proportion.
Summary of the invention
Because high-purity а-aluminum oxide had been both non-conductive under 800 ℃, also magnetic conduction not, so, can't hot melt in the crucible as it is directly placed.
The object of the invention is to propose a kind of a kind of premelt crystallization method of high-purity а-aluminum oxide.
The present invention drops into high-purity а-alumina powder in periphery is furnished with the cold crucible of metal of ruhmkorff coil; Feed temperature in the top of high-purity а-alumina powder and be 2000～2200 ℃ the high-purity а-alumina powder of oxyhydrogen flame direct heating part; After the high-purity а of part-alumina powder fusing and producing inductive current, remove oxyhydrogen flame, treat that high-purity а-alumina powder is all after the fusing; The melt cooling is solidified, obtain high-purity а-aluminum oxide fritting piece.
The present invention is with 2000～2200 ℃ the high-purity а-alumina powder of oxyhydrogen flame direct heating part; Make the direct melted by heat of high-purity а-alumina powder; When the part melt was arranged in the crucible, melt produced the inductive current heating under the inducedmagnetic field effect, constantly melt aluminum oxide powder; Reach recrystallize up to the whole fusings of high-purity а-alumina powder, form the bigger xln of proportion.
The present invention adopts oxyhydrogen flame to draw molten and the high-frequency induction heating mode combines carries out the premelt crystallization, and technology is simple, reasonable, is easy to control; In crystallisation process, not having other impurity brings into; The high purity that can keep а-aluminum oxide simultaneously, also can effectively be removed the entrap bubble in the micro mist.The present invention also is beneficial to and realizes continuous charging and crystallization, and this type of heating is compared with oxyhydrogen flame, and is energy-conservation 30%, 5 times of output raisings.
Embodiment
Prepare a high frequency furnace, body of heater is the cold crucible of metal, outside the cold crucible of metal, arranges ruhmkorff coil.Earlier high-purity а-alumina powder is dropped in the cold crucible of metal; Feed temperature in the top of high-purity а-alumina powder and be 2000～2200 ℃ the high-purity а-alumina powder of oxyhydrogen flame direct heating part; After the high-purity а of part-alumina powder fusing and producing inductive current, remove oxyhydrogen flame, treat that high-purity а-alumina powder is all after the fusing; The melt cooling is solidified, obtain high-purity а-aluminum oxide fritting piece.
Claims (1)
1. a kind of premelt crystallization method of high-purity а-aluminum oxide; It is characterized in that: in periphery is furnished with the cold crucible of metal of ruhmkorff coil, drop into high-purity а-alumina powder; Feed temperature in the top of high-purity а-alumina powder and be 2000～2200 ℃ the high-purity а-alumina powder of oxyhydrogen flame direct heating part; After the high-purity а of part-alumina powder fusing and producing inductive current, remove oxyhydrogen flame, treat that high-purity а-alumina powder is all after the fusing; The melt cooling is solidified, obtain high-purity а-aluminum oxide fritting piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103305879A CN102503357A (en) | 2011-10-27 | 2011-10-27 | Premelt crystallization method of high-purity alpha-alumina |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103305879A CN102503357A (en) | 2011-10-27 | 2011-10-27 | Premelt crystallization method of high-purity alpha-alumina |
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| CN102503357A true CN102503357A (en) | 2012-06-20 |
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| CN2011103305879A Pending CN102503357A (en) | 2011-10-27 | 2011-10-27 | Premelt crystallization method of high-purity alpha-alumina |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104775157A (en) * | 2015-05-05 | 2015-07-15 | 山东天岳先进材料科技有限公司 | Alumina sapphire single crystal growth method |
| CN104775158A (en) * | 2015-05-05 | 2015-07-15 | 山东天岳先进材料科技有限公司 | Sapphire single crystal growth method |
| CN104775155A (en) * | 2015-05-05 | 2015-07-15 | 山东天岳先进材料科技有限公司 | Growing method for colored alumina gem mono-crystal |
| WO2020248643A1 (en) * | 2019-06-13 | 2020-12-17 | 中国电子科技集团公司第二十六研究所 | Polycrystalline material synthesizing device and synthesizing method for scintillation crystal having gallium-containing garnet structure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101913636A (en) * | 2010-08-20 | 2010-12-15 | 李振亚 | Method for producing high-purity high-density alumina block material for sapphire single crystals |
-
2011
- 2011-10-27 CN CN2011103305879A patent/CN102503357A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101913636A (en) * | 2010-08-20 | 2010-12-15 | 李振亚 | Method for producing high-purity high-density alumina block material for sapphire single crystals |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104775157A (en) * | 2015-05-05 | 2015-07-15 | 山东天岳先进材料科技有限公司 | Alumina sapphire single crystal growth method |
| CN104775158A (en) * | 2015-05-05 | 2015-07-15 | 山东天岳先进材料科技有限公司 | Sapphire single crystal growth method |
| CN104775155A (en) * | 2015-05-05 | 2015-07-15 | 山东天岳先进材料科技有限公司 | Growing method for colored alumina gem mono-crystal |
| CN104775157B (en) * | 2015-05-05 | 2017-11-14 | 山东天岳先进材料科技有限公司 | A kind of growing method of blue alumina jewel monocrystalline |
| WO2020248643A1 (en) * | 2019-06-13 | 2020-12-17 | 中国电子科技集团公司第二十六研究所 | Polycrystalline material synthesizing device and synthesizing method for scintillation crystal having gallium-containing garnet structure |
| US11623872B2 (en) | 2019-06-13 | 2023-04-11 | China Electronics Technology Group Corporation No. 26 Research Institute | Device and method for synthesis of gallium-containing garnet-structured scintillator poly crystalline material |
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Application publication date: 20120620 |
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