CN102399085A - Pre-melting crystallization method for high-purity alpha-alumina - Google Patents
Pre-melting crystallization method for high-purity alpha-alumina Download PDFInfo
- Publication number
- CN102399085A CN102399085A CN2011103305915A CN201110330591A CN102399085A CN 102399085 A CN102399085 A CN 102399085A CN 2011103305915 A CN2011103305915 A CN 2011103305915A CN 201110330591 A CN201110330591 A CN 201110330591A CN 102399085 A CN102399085 A CN 102399085A
- Authority
- CN
- China
- Prior art keywords
- purity
- alumina
- alpha
- purity alpha
- micro powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a pre-melting crystallization method for high-purity alpha-alumina, and relates to the technical field of pre-melting crystallization processes of high-purity materials. High-purity alpha-alumina micro powder is added into a metal cold crucible provided with an induction coil at the periphery; aluminum powder is buried in the high-purity alpha-alumina micro powder and bursts into flame under the action of induction current to produce heat to melt surrounding high-purity alpha-alumina micro powder; and after the high-purity alpha-alumina micro powder is completely melted, the melt is cooled and solidified to obtain a high-purity alpha-alumina pre-melt. The method has a simple and rational process and is easy to control; no other impurities are introduced during crystallization; high purity of the alpha-alumina can be kept; meanwhile, residual gas in the micro powder can also be effectively removed. The method also facilitates realization of continuous feeding and crystallization; and compared with oxyhydrogen flame, the heating mode has the advantages of saving energy by 30 percent and improving yield by 5 times.
Description
Technical field
The present invention relates to the premelt crystallization processes technical field of high-purity material.
Background technology
High-purity а-aluminum oxide can be used for producing sapphire and since high-purity а-aluminum oxide for particle diameter has only the micro mist of 0.1～0.5 μ m, proportion is little (to be about 0.25g/cm
3); In order to enhance productivity; The charging capacity of high-purity а-aluminum oxide when strengthening each sapphire and producing, some manufacturing enterprise requires to propose high-purity а-aluminum oxide is carried out the requirement of secondary processing, promptly requires high-purity а-alumina powder is processed the bigger crystalline product of proportion.
Because high-purity а-aluminum oxide had been both non-conductive under 800 ℃, also magnetic conduction not, so, can't hot melt in the cold crucible of metal as it is directly placed.
Summary of the invention
The object of the invention is to propose a kind of premelt crystallization method of high-purity а-aluminum oxide.
The present invention drops into high-purity а-alumina powder in periphery is furnished with the cold crucible of metal of ruhmkorff coil; In high-purity а-alumina powder, bury aluminium powder underground, under faradic effect, the aluminium powder catching fire; Produce heat melts high-purity а-alumina powder on every side; After treating that high-purity а-alumina powder all melts, the melt cooling is solidified, obtain high-purity а-aluminum oxide fritting piece.
The present invention is with the inductive current aluminium powder that ignites; High-purity а around the heat melts of producing-alumina powder forms melt; Melt produces the inductive current heating under the inducedmagnetic field effect; Constantly the fusing aluminum oxide powder reaches recrystallize up to the whole fusings of high-purity а-alumina powder, forms the bigger xln of proportion.
Technology of the present invention is simple, reasonable, is easy to control, in crystallisation process, does not have other impurity and brings into, can keep the high purity of а-aluminum oxide, simultaneously, also can effectively remove the entrap bubble in the micro mist.The present invention also is beneficial to and realizes continuous charging and crystallization, and this type of heating is compared with oxyhydrogen flame, and is energy-conservation 30%, 5 times of output raisings.
Embodiment
Prepare a high frequency furnace, body of heater is the cold crucible of metal, outside the cold crucible of metal, arranges ruhmkorff coil.
Earlier high-purity а-alumina powder is dropped in the cold crucible of metal; In high-purity а-alumina powder, bury the pure aluminium powder of annular distribution underground, under faradic effect, the aluminium powder catching fire; Produce heat melts high-purity а-alumina powder on every side; After treating that high-purity а-alumina powder all melts, the melt cooling is solidified, obtain high-purity а-aluminum oxide fritting piece.
Claims (2)
1. the premelt crystallization method of high-purity а-aluminum oxide is characterized in that: in periphery is furnished with the cold crucible of metal of ruhmkorff coil, drop into high-purity а-alumina powder, in high-purity а-alumina powder, bury aluminium powder underground; Under faradic effect; The aluminium powder catching fire produces the high-purity а-alumina powder around the heat melts, treats that high-purity а-alumina powder is all after the fusing; The melt cooling is solidified, obtain high-purity а-aluminum oxide fritting piece.
2. according to the premelt crystallization method of the said high-purity а-aluminum oxide of claim 1, it is characterized in that: said aluminium powder shape ringwise is embedded in high-purity а-alumina powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103305915A CN102399085A (en) | 2011-10-27 | 2011-10-27 | Pre-melting crystallization method for high-purity alpha-alumina |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103305915A CN102399085A (en) | 2011-10-27 | 2011-10-27 | Pre-melting crystallization method for high-purity alpha-alumina |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102399085A true CN102399085A (en) | 2012-04-04 |
Family
ID=45881794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103305915A Pending CN102399085A (en) | 2011-10-27 | 2011-10-27 | Pre-melting crystallization method for high-purity alpha-alumina |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102399085A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107502951A (en) * | 2017-10-18 | 2017-12-22 | 睿为电子材料（天津）有限公司 | The process of the floated cold crucible high purity aluminum oxide polycrystal body of graphite |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1414146A (en) * | 2002-06-21 | 2003-04-30 | 深圳市淼浩高新科技开发有限公司 | Using induction heating molybdenium crucible in hydrogen atmosphere to make Czochralski grown sapphire crystal |
| CN101294890A (en) * | 2008-05-30 | 2008-10-29 | 苏州宾特电源有限公司 | Carbon black particulate sensor |
| CN101913636A (en) * | 2010-08-20 | 2010-12-15 | 李振亚 | Method for producing high-purity high-density alumina block material for sapphire single crystals |
-
2011
- 2011-10-27 CN CN2011103305915A patent/CN102399085A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1414146A (en) * | 2002-06-21 | 2003-04-30 | 深圳市淼浩高新科技开发有限公司 | Using induction heating molybdenium crucible in hydrogen atmosphere to make Czochralski grown sapphire crystal |
| CN101294890A (en) * | 2008-05-30 | 2008-10-29 | 苏州宾特电源有限公司 | Carbon black particulate sensor |
| CN101913636A (en) * | 2010-08-20 | 2010-12-15 | 李振亚 | Method for producing high-purity high-density alumina block material for sapphire single crystals |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107502951A (en) * | 2017-10-18 | 2017-12-22 | 睿为电子材料（天津）有限公司 | The process of the floated cold crucible high purity aluminum oxide polycrystal body of graphite |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101913636B (en) | Method for producing high-purity high-density alumina block material for sapphire single crystals | |
| CN104032151A (en) | An EB cold hearth smelting method of TC4 titanium alloy ingots | |
| CN103510157B (en) | A kind of long brilliant technique of induction of efficient ingot casting | |
| CN109574016B (en) | Directional solidification purification device and purification method for metallurgical silicon | |
| CN103184518A (en) | Treatment method for sapphire raw materials | |
| CN105478690B (en) | Graphite jig for up-drawing method crystallizer | |
| CN102503357A (en) | Premelt crystallization method of high-purity alpha-alumina | |
| CN103011220A (en) | Production method of 5N high-purity aluminum oxide polycrystal material | |
| CN105414509A (en) | Oxygen-free copper rod for cable and up-casting preparation process of oxygen-free copper rod for cable | |
| CN104213191A (en) | Semi-melting high-efficiency polycrystalline silicon ingot casting process | |
| CN101824650A (en) | Purifying system of high purity polysilicon and purifying method | |
| CN106894084A (en) | A kind of method for changing electron beam purifying polycrystalline silicon solidification crucible shop fixtures mode | |
| CN111041558B (en) | Rare earth sesquioxide laser crystal growth method | |
| CN102120578B (en) | Method and device for coupling and purifying polysilicon and removing phosphorus and metal with electron beams | |
| CN105154978A (en) | Ggalium arsenide polycrystal magnetic field growing furnace and growing method | |
| CN102399085A (en) | Pre-melting crystallization method for high-purity alpha-alumina | |
| CN104790034A (en) | Alumina polycrystal preparation method | |
| CN102689000B (en) | Electromagnetic forming device and method for manufacturing titanium aluminum-based alloy directional fully-lamellar microstructure | |
| CN102432020B (en) | Manufacturing method of solar grade polysilicon | |
| CN102560136A (en) | Smelting and arcing process for vacuum consumable electro-arc furnace, and smelting process | |
| CN103628130B (en) | A kind of Cold Crucible Melting device realizing continuous crystal-pulling | |
| SG171511A1 (en) | Method for producing a single crystal composed of silicon by remelting granules | |
| CN207244047U (en) | A kind of high density sapphire crystal quick process units of high purity aluminium oxide crystal block | |
| CN102839299A (en) | Preparation method for pure nickel hollow blank for extruding pipe billet | |
| CN106744970B (en) | aluminum ingot furnace drawing process for melting silicon by induction furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120404 |