CN102503104A - Alpha-aluminum oxide quasi-fusion cake microwave sintering method - Google Patents
Alpha-aluminum oxide quasi-fusion cake microwave sintering method Download PDFInfo
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- CN102503104A CN102503104A CN2011103305934A CN201110330593A CN102503104A CN 102503104 A CN102503104 A CN 102503104A CN 2011103305934 A CN2011103305934 A CN 2011103305934A CN 201110330593 A CN201110330593 A CN 201110330593A CN 102503104 A CN102503104 A CN 102503104A
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- biscuit
- aluminum oxide
- alpha
- sintering
- sintering method
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention relates to an alpha-aluminum oxide quasi-fusion cake microwave sintering method, belonging to the technical field of high-purity material preparation. The method comprises the following steps: putting a biscuit loading box, which contains alpha-aluminum oxide micropowder and is made of sandwich boards composed of SiC boards and mullite fiberboards, in a microwave heating furnace, and sintering at 1350-1360 DEG C for 2-4 hours. When heating the biscuit, heat is firstly transferred from outside to inside and then from inside to outside, so that the biscuit is uniformly heated and can not crack; and the heating temperature can be higher, and the power can be saved by more than 20%. In addition, the invention is beneficial to enhancing the activation energy for sintering the biscuit and reinforcing the combination of the chemical bond, so that the density of the sintered biscuit can be approximate to more than 96% of the theoretical density (3.98g/cm<3>).
Description
Technical field
The present invention relates to the high-purity material preparing technical field.
Background technology
High-purity а-aluminum oxide can be used for producing sapphire, because the particle diameter of high-purity а-aluminum oxide has only the micro mist of 0.1~0.5 μ m, proportion is little, and (loose density is about 0.25g/cm
3); In order to enhance productivity, reduce impurity and entrap bubble; The charging capacity of high-purity а-aluminum oxide when strengthening each sapphire and producing; Some manufacturing enterprise requires high-purity а-aluminum oxide is carried out the requirement of secondary processing, promptly requires high-purity а-alumina powder is processed the bigger crystalline product of proportion.
Present conventional processing units is the resistive heating pushed bat kiln, and its defective is that current consumption is big, heating is inhomogeneous, and temperature is difficult to reach required value, and the accurate frit biscuit of the а-aluminum oxide behind the sintering can't reach 3.6 g/cm
3Above density.
Summary of the invention
The sandwich board that the present invention forms with SiC plate and mullite fiber plate is the biscuit carrying case, and the biscuit carrying case that fills а-alumina powder is placed in the microwave oven, and temperature is a sintering 2~4 hours under 1350~1360 ℃ the condition in body of heater.
The middle layer of said sandwich board is the SiC plate, and the mullite fiber plate is separately positioned on two surfaces of SiC plate.
It is heating installation that the present invention adopts microwave oven; The sandwich board that adopts SiC plate and mullite fiber plate to form carries out the furnace heat transfer material; Constitute required high-purity suction ripple-pass through the ripple medium layer, lean on the microwave absorbing property of biscuit itself to heat after making the preheating of aluminum oxide powder biscuit.The heating of this heating biscuit is outside at first, is outside from the lining then, makes and does not ftracture homogeneous heating, and it is higher that Heating temperature can reach, and practices thrift power consumption more than 20%.In addition, the activation energy that the present invention also is beneficial to the agglomerating biscuit improves, and adds the combination of strong chemical bond, makes institute's agglomerating biscuit density can be near theoretical density (3.98 g/cm
3) more than 96%.
Embodiment
1, preparation biscuit carrying case:
Make sandwich board: with the SiC plate is the middle layer, and the mullite fiber plate is clamped in two surfaces of SiC plate respectively, forms sandwich board.
Be assembled into the biscuit carrying case of lid with sandwich board.
2, with а-alumina powder biscuit carrying case of packing into, build lid, the biscuit carrying case is pushed in the microwave oven.
3, temperature is a sintering 2~4 hours under 1350~1360 ℃ the condition in body of heater.
4, take out the biscuit carrying case, pour out the accurate frit of agglomerating а-aluminum oxide.
Claims (2)
1. the microwave sintering method of the accurate frit of а-aluminum oxide; It is characterized in that the sandwich board of forming with SiC plate and mullite fiber plate is the biscuit carrying case; The biscuit carrying case that fills а-alumina powder is placed in the microwave oven, and temperature is a sintering 2~4 hours under 1350~1360 ℃ the condition in body of heater.
2. according to the microwave sintering method of the accurate frit of the said а-aluminum oxide of claim 1, the middle layer that it is characterized in that said sandwich board is the SiC plate, and the mullite fiber plate is separately positioned on two surfaces of SiC plate.
Priority Applications (1)
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CN2011103305934A CN102503104A (en) | 2011-10-27 | 2011-10-27 | Alpha-aluminum oxide quasi-fusion cake microwave sintering method |
Applications Claiming Priority (1)
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CN2011103305934A CN102503104A (en) | 2011-10-27 | 2011-10-27 | Alpha-aluminum oxide quasi-fusion cake microwave sintering method |
Publications (1)
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CN102503104A true CN102503104A (en) | 2012-06-20 |
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ID=46215255
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CN2011103305934A Pending CN102503104A (en) | 2011-10-27 | 2011-10-27 | Alpha-aluminum oxide quasi-fusion cake microwave sintering method |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003011792A1 (en) * | 2001-08-01 | 2003-02-13 | The Pennsylvania State University Research Foundation | Method and apparatus for the preparation of transparent alumina ceramics by microwave sintering |
CN2687594Y (en) * | 2004-03-18 | 2005-03-23 | 杨林 | Controllable atmosphere microwave high temperature heating furnace |
CN201394651Y (en) * | 2009-04-07 | 2010-02-03 | 中国矿业大学 | Microwave sintering device of self-lubricating composite material |
CN101913636A (en) * | 2010-08-20 | 2010-12-15 | 李振亚 | Method for producing high-purity high-density alumina block material for sapphire single crystals |
CN102011184A (en) * | 2010-12-29 | 2011-04-13 | 四川鑫通新材料有限责任公司 | Production method of alpha-aluminum oxide single crystal |
CN102173756A (en) * | 2011-01-30 | 2011-09-07 | 河北恒博精细陶瓷材料有限公司 | Preparation method of high-purity aluminum oxide sintered body for growing sapphire crystal |
-
2011
- 2011-10-27 CN CN2011103305934A patent/CN102503104A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003011792A1 (en) * | 2001-08-01 | 2003-02-13 | The Pennsylvania State University Research Foundation | Method and apparatus for the preparation of transparent alumina ceramics by microwave sintering |
CN2687594Y (en) * | 2004-03-18 | 2005-03-23 | 杨林 | Controllable atmosphere microwave high temperature heating furnace |
CN201394651Y (en) * | 2009-04-07 | 2010-02-03 | 中国矿业大学 | Microwave sintering device of self-lubricating composite material |
CN101913636A (en) * | 2010-08-20 | 2010-12-15 | 李振亚 | Method for producing high-purity high-density alumina block material for sapphire single crystals |
CN102011184A (en) * | 2010-12-29 | 2011-04-13 | 四川鑫通新材料有限责任公司 | Production method of alpha-aluminum oxide single crystal |
CN102173756A (en) * | 2011-01-30 | 2011-09-07 | 河北恒博精细陶瓷材料有限公司 | Preparation method of high-purity aluminum oxide sintered body for growing sapphire crystal |
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PB01 | Publication | ||
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Application publication date: 20120620 |