CN102498550A - Method for etching silicon-containing film - Google Patents

Method for etching silicon-containing film Download PDF

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Publication number
CN102498550A
CN102498550A CN2010800410379A CN201080041037A CN102498550A CN 102498550 A CN102498550 A CN 102498550A CN 2010800410379 A CN2010800410379 A CN 2010800410379A CN 201080041037 A CN201080041037 A CN 201080041037A CN 102498550 A CN102498550 A CN 102498550A
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volume
etching
unstripped gas
silicon
oxygen
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CN102498550B (en
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功刀俊介
真弓聪
佐藤崇
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher

Abstract

Disclosed is a method for etching a silicon-containing film, wherein lifting or separation of an organic film is prevented. Specifically, an etching material gas that does not substantially contain hydrogen atoms is introduced into a plasma space (23) that is at near atmospheric pressure, thereby producing an etching gas. The etching gas is brought into contact with an object to be processed (90) that contains a silicon-containing film (92) and an organic film (93). The silicon-containing film (92) can be oxidized with nitrogen oxide (NOx). The etching material gas contains 7-80% by volume of a fluorine-based material that does not contain hydrogen atoms, 7-80% by volume of nitrogen (N2) and 5-60% by volume of oxygen (O2).

Description

Be used for the method that etching contains silicon fiml
Background of invention
Description of Related Art
Using the containing in the silicon fiml etching of atmospheric pressure plasma, known technology is through with water (H 2O) join for example CF of fluorine component 4In and produce HF, with the said film of HF etching (referring to patent literature 1 to 3).
For example, in patent documentation 1, with silicon for example the film of amorphous silicon or silicon metal become silica (formula 1) with ozone oxidation; And water is joined for example CF of fluorine component 4In, make it through being in the plasma span under the nearly atmospheric pressure then, thereby produce HF (formula 2); And through HF or its aqueous solution etch silicon dioxide (formula 3).In the plasma span, except that HF, also produce COF 2Deng.COF 2Produce HF (formula 4) with the water reaction, it is used for etching oxidation silicon (formula 3).
Si+2O 3→ SiO 2+ 2O 2(formula 1)
CF 4+ 2H 2O → 4HF+CO 2(formula 2)
SiO 2+ 4HF → SiF 4+ 2H 2O (formula 3)
COF 2+ H 2O → CO 2+ 2HF (formula 4)
The prior art document
Patent documentation
Patent documentation 1: japanese unexamined patent publication No. 2007-294642
Patent documentation 2: japanese unexamined patent publication No. 2000-58508
Patent documentation 3: japanese unexamined patent publication No. 2002-270575
Invention field
The present invention relates to the method for the film of the siliceous for example silicon nitride of etchant gas that a kind of use obtains through the gaseous plasmaization that will contain fluorine component.
Summary of the invention
The problem that the present invention will solve
The HF gas or the HF aqueous solution have infiltration and infiltrate the character of multiple organic compound.Situation about existing is, the base material of pending object comprises and contains silicon fiml, and comprises that organic membrane is as being used for the photoresist of patterning.In the case, adding under the situation of entry, organic membrane is also infiltrated in the HF infiltration, and this moment, the base material quilt was from plasma fluorine component such as CF 4And the etchant gas that produces.This reduces the interface adhesiveness of organic membrane, possibly cause the protuberance (lifting) of organic membrane in some cases or peels off.Particularly when the water in the etching gas was adsorbed on the surface of object, HF was dissolved in the water, thereby increased infiltration and the infiltration of HF, and the protuberance of organic membrane and peel off and possibly become remarkable.On the other hand, the amount of the HF that the amount of the water that minimizing will add or restriction will produce possibly reduce etch-rate, and is unpractiaca.
The scheme of dealing with problems
Material is silica for example, and silicon nitride and silicon (amorphous silicon, monocrystalline silicon and polysilicon) can be not only by the HF etchings, and by oxygen containing fluorine activation species such as 2-carbonyl fluoride (COF 2) and oxygen fluoride (OF 2, O 2F 2) etching.The reaction rate of silica is usually above the reaction rate of other materials.And material except that silica such as silicon nitride and silicon can oxidized nitrogen oxidations.
Based on the above knowledge that provides, the present invention provides a kind of method that contains silicon fiml that is used for the pending object of etching, and said object comprises said silicon fiml and the organic membrane of containing, and the said silicon fiml that contains can oxidized nitrogen (NOx) oxidation, and said method comprises:
Be incorporated into the generation step that produces etching gas in the plasma span that is under the nearly atmospheric pressure through the unstripped gas that will not have hydrogen atom basically; With
The etching reaction step that said etching gas is contacted with said object;
Wherein said unstripped gas (source gas) contains the fluorine component of the not hydrogen atoms of 7 to 80 volume %, the nitrogen (N of 7 to 80 volume % 2) and the oxygen (O of 5 to 60 volume % 2).
In said generation step; Can produce the etching gas that contains the fluorine-containing activation species of oxygen and nitrogen oxide (NOx) and small amount of H F or do not contain HF through following method: the unstripped gas plasmaization that will have above-mentioned composition (comprising: decompose; Excite activation and ionization).
In the etching reaction step, can be by the said silicon fiml that contains of said oxygen containing fluorine activation species etching.And, can will contain silicon fiml with nitrogen oxide and be oxidized to oxide silicon, thereby strengthen by the caused etch-rate of oxygen containing fluorine activation species.Because it is in etching gas, contain small amount of H F or do not contain HF, therefore a small amount of or do not have the HF infiltration or penetrate in the organic membrane.Therefore, can avoid adhering the reducing in interface of organic membrane, thus restriction or prevent the protuberance of organic membrane or peel off.And, except the oxidation effect through nitrogen oxide with the consequent etch-rate enhancement effect, also be arranged in the scope of above regulation through flow-rate ratio with the component of unstripped gas, can strengthen etch-rate safely.Therefore, can shorten disposing time, the chance of the water adsorption that reduces ambient gas to the object, thus combination and the not effect of the unstripped gas of hydrogen atoms more safely limit or prevent the protuberance of organic membrane or peel off.And, can prevent on the part on the surface of object, to form the condensate layer of water.Therefore, the inhibition of can avoid oxidation reaction to be condensed layer suppresses and etching reaction therefore is condensed layer.And, the change in etch rate between the part that can avoid forming the part of condensate layer therein and not forming condensate layer therein.Therefore, can prevent the roughening on object surface.
Preferably, contain silicon fiml and contain any in following: silicon (Si), silicon nitride (SiNx), carborundum (SiC), silicon oxynitride (SiON), siloxicon (SiOC) and carbonitride of silicium (SiCN).Oxygen containing fluorine activation species are usually less than the etching reaction speed of oxygen containing fluorine activation species to silica to the etching reaction speed of these materials (Si, SiNx, SiC, SiON, SiOC and SiCN), and can oxidized nitrogen oxidation.Silicon (Si) can be amorphous silicon, monocrystalline silicon or polysilicon.
Unstripped gas can contain the oxygen below the 45 volume %, the oxygen below the preferred 30 volume %, and can contain the oxygen below the 20 volume %.The remainder of unstripped gas can contain nitrogen and fluorine component, and the volume ratio of nitrogen and fluorine component is 10: 90 to 90: 10.With this understanding, particularly when being processed by silicon nitride, silicon fiml can guarantee high etch-rate when containing.
Preferably, the summation of fluorine component and oxygen and the volume flow ratio of nitrogen are 70: 30 to 20: 80, and the volume flow ratio of fluorine component and oxygen is 75: 25 to 40: 60.In the case, more preferably, in unstripped gas, the summation of fluorine component and oxygen and the volume flow ratio of nitrogen are 60: 40 to 30: 70.More preferably, in unstripped gas, the summation of fluorine component and oxygen and the volume flow ratio of nitrogen are 50: 50 to 40: 60.And in the case, the volume flow ratio of fluorine component and oxygen is 60: 40 to 40: 60 in the unstripped gas, more preferably, and about 50: 50.Under these conditions, particularly when containing silicon fiml and process, can improve etch-rate safely by silicon nitride.When the content ratio of nitrogen in unstripped gas is too high, this means that the content ratio of fluorine component and oxygen is low excessively.Therefore, possibly reduce the generation of oxygen containing fluorine activation species, and possibly reduce etch-rate.Cross when low when the content ratio of nitrogen in unstripped gas, possibly reduce the generation of nitrogen oxide.Therefore, possibly reduce containing the oxidation effectiveness of silicon fiml, and possibly reduce etch-rate.By inference, cross when low and cross when hanging down when the content ratio of the oxygen in the unstripped gas when the content ratio of the fluorine component in the unstripped gas, etch-rate all possibly reduce, and reason is under any condition, all to have reduced the generation of oxygen containing fluorine activation species.
Unstripped gas can contain the fluorine component of 20 to 80 volume %, the oxygen of the nitrogen of 7 to 60 volume % and 5 to 60 volume %.And unstripped gas can contain the fluorine component of 40 to 80 volume %, the oxygen of the nitrogen of 7 to 40 volume % and 5 to 40 volume %.Under these conditions, particularly when containing silicon fiml for example amorphous silicon is processed by silicon, can guarantee high etch rates.When containing silicon fiml for example amorphous silicon is processed by silicon, unstripped gas can contain more than 30%, the fluorine component that preferred 50 volume % are above, and the remainder of unstripped gas is with N 2: O 2=10: 90 to 90: 10 volume ratio contains nitrogen and oxygen.
Preferably, this method comprises that also the temperature that is used for object is controlled at more than 50 degrees centigrade, preferred about 50 to 120 degrees centigrade, and 50 to 100 degrees centigrade temperature controlling step more preferably from about.This moisture that prevents ambient gas such as atmosphere is attracted on the object, thereby prevents on the surface of object, to produce HF by the oxygen containing fluorine activation species in moisture and the etching gas.Therefore, can limit safely or prevent the protuberance of organic membrane or peel off.
Particularly when containing silicon fiml and processed by silicon nitride etc., the temperature that preferably makes object is high as far as possible in the temperature capacity scope of the organic membrane that constitutes object etc.Can object be heated to up to about 100 degrees centigrade.The temperature capacity that depends on organic membrane can be heated to object up to about 120 degrees centigrade.This prevents that safely moisture is attracted on the object, keeps high etch-rate simultaneously.Thereby, can more safely limit or prevent the protuberance of organic membrane or peel off.And, can prevent the sex change (change in physical is as shrinking) of organic membrane.Change although depend on the formation of organic membrane, normally, the sex change of organic membrane occurs in more than 100 to 200 degrees centigrade.
When containing silicon fiml and process, preferably, the temperature of object is controlled at is higher than 50 degrees centigrade to 100 degrees centigrade, more preferably 60 degrees centigrade to 80 degrees centigrade by amorphous silicon etc.This can strengthen the etch-rate (referring to embodiment 8 and Fig. 7) of amorphous silicon etc.Temperature through making object is higher than normal temperature, can prevent the absorption of moisture on object, thereby can limit or prevent the protuberance of organic membrane or peel off.And, can prevent the sex change of organic membrane safely.
The instance of object comprises flat-panel monitor such as LCD and semiconductor device.For example, comprise the amorphous silicon film that stacks gradually, metal film and organic membrane as object as the TFT (thin-film transistor) of the switch element of each pixel of flat-panel display panel.Dopant is entrained on the membrane portions of the amorphous silicon film on the metal film side of membrane portions.When the etching metal film when being doped with the membrane portions (doped amorphous silicon film) of the amorphous silicon film of dopant, organic membrane plays the mask effect.
When etching doped amorphous silicon film, preferably use above-mentioned etching gas.The unstripped gas of etching gas can contain the fluorine component of 7 to 80 volume %, and said fluorine component is hydrogen atoms not, the nitrogen (N of 7 to 80 volume % 2) and the oxygen (O of 5 to 60 volume % 2).Preferably, the unstripped gas of etching gas can contain the fluorine component of 20 to 80 volume %, the nitrogen (N of 7 to 60 volume % 2) and the oxygen (O of 5 to 60 volume % 2).More preferably, the unstripped gas of etching gas can contain the fluorine component of 40 to 80 volume %, the nitrogen (N of 7 to 40 volume % 2) and the oxygen (O of 5 to 40 volume % 2).The temperature of object preferably is higher than 50 degrees centigrade to 100 degrees centigrade, more preferably 60 degrees centigrade to 80 degrees centigrade.This makes it possible to etching doped amorphous silicon film safely, thereby forms the TFT channel part.And, because etching gas contains small amount of H F or does not contain HF and contain small amount of H 2O or do not contain H 2Therefore O can avoid ionization and the infiltration of fluorine in organic membrane.Therefore, can avoid the interface adhesiveness of organic membrane to descend.Therefore, can prevent the protuberance of organic membrane or peel off, and can keep organic membrane to be attached to metal film.And, can avoid metal membrane-coating HF dissolving (etching).Therefore, can form good channel part.
Condition by " not having hydrogen atom basically " indication is not limited to wherein the not condition of hydrogen atoms; But comprise the compound that wherein contains a small amount of hydrogen atoms such as the condition of moisture, as long as the amount of this compound enough less so that unstripped gas can not induce the protuberance of organic membrane and peel off.For example, unstripped gas can contain its dew point temperature be preferably below-40 degrees centigrade and more preferably-60 degree centigrade below water.The amount of the water that in the unstripped gas with this dew point temperature level, contains drops in the scope that is substantially zero, and unstripped gas is substantially free of hydrogen atom.
Remove fluorine component, oxygen (O 2) and nitrogen (N 2) in addition, unstripped gas can also contain diluent gas such as Ar and He.Can air be used to replace at least a portion of oxygen and nitrogen.
The fluorine component of hydrogen atoms can not comprise for example CF of perfluocarbon (PFC) 4, C 2F 6, C 3F 6And C 3F 8And can comprise F 2, SF 6, NF 3And XeF 2
Oxygen containing fluorine activation species comprise COF 2, OF 2And O 2F 2
Nearly atmospheric pressure is meant at 1.013x10 4To 50.663x10 4Pressure in the Pa scope.When considering the simplification of pressure controlled easy property and device structure, preferably at 1.333x10 4To 10.664x10 4Pressure in the Pa scope, and more preferably at 9.331x10 4To 10.397x10 4Pressure in the Pa scope.
Organic membrane can be such film: it is applied in LCD or production process of semiconductor device, and finally is removed (for example, mask layer) or finally constitutes the part (for example, insulating barrier and protective layer) of LCD or semiconductor device.Organic membrane can be laminated to be wanted on the etched top side that contain silicon fiml, maybe can be formed in the layer that contains under the silicon fiml.The organic membrane that is laminated on the top side that contains silicon fiml comprises mask layer, insulating barrier and protective layer.Be formed in the organic membrane that contains the layer under the silicon fiml and comprise insulating barrier.Mask layer for example is made up of photoresist.The organic membrane that constitutes insulating barrier or protective layer comprises for example epoxy resin, acrylic resin, polyimide resin and novolac resin.
The beneficial effect of the invention
According to the present invention, can the restriction or prevent pending object organic membrane protuberance or peel off in etching contain silicon fiml.
The accompanying drawing summary
Fig. 1 is the schematic configuration figure according to the plasma etching equipment of first embodiment of the present invention.
Fig. 2 is the schematic configuration figure of second embodiment of the present invention.
Fig. 3 is presented at embodiment 1, the figure of the etch-rate measurement result among comparative example 1-1 and the comparative example 1-2.
Fig. 4 shows that silicon nitride film etch-rate among the embodiment 2 is with respect to the figure of the measurement result of nitrogen content ratio in the unstripped gas.
Fig. 5 shows that silicon nitride film etch-rate among the embodiment 4 is with respect to oxygen in the unstripped gas and CF 4Between the figure of measurement result of flow-rate ratio.
Fig. 6 is the spectrogram that is presented at before the processing among the embodiment 5 with the analysis result of the surface atom of afterwards silicon nitride.
Fig. 7 is the figure that is presented at the temperature dependency measurement result of the amorphous silicon etch speed among the embodiment 8.
Preferred embodiment is described
Embodiment of the present invention below will be described with reference to the drawings.
Fig. 1 shows first embodiment of the present invention.Pending object 90 is such as but not limited to being LCD or semiconductor device.To the not special restriction of the base material 91 of object 90.Base material 91 can be a glass, and semiconductor wafer maybe can be to have continuously or the resin molding of sheet structure.As containing on the upper surface that silicon fiml 92 is coated on base material 91 of etched object.Containing silicon fiml 92 for example is made up of silicon nitride.
Organic membrane 93 is laminated on and contains silicon fiml 92 (top side).Organic membrane 93 for example is made up of the photoresist of patterning.The part that contains silicon fiml 92 that does not have painting photoresist is to want etched part.
Organic membrane 93 is not limited to mask layer such as photoresist, and can be by epoxy resin, acrylic resin, insulating barrier or protective layer that polyimide resin or novolac resin etc. are formed.Organic membrane 93 and nonessential being laminated on the top side that contains silicon fiml 92, but can be formed in the layer that contains under the silicon fiml 92.
Atmospheric pressure plasma etching machines 1 is plasma etching object 90 under nearly atmospheric pressure.Plasma etching equipment 1 comprises support 2 and etching gas supply pipeline 3.Object 90 is supported by support 2.Support 2 is made up of platform, but is not limited to it.Support 2 can be roller path or ribbon conveyer, perhaps can be a plurality of deflector rolls or executor (manipulator).Alternatively, object 90 can be carried by the conveying mechanism (not shown) that is connected with platform 2.
The temperature of the object 90 on platform 2 is by temperature controller 4 controls.In the accompanying drawings, temperature controller 4 is structured in the platform 2.Alternatively, temperature controller 4 can be placed in platform 2 outsides.Temperature controller 4 can be an electrothermal heater, pharoid, or comprise the heat exchanger of the passage that is used for temperature controlled liquid flow therein.
Etching gas supply pipeline 3 comprises unstripped gas supply pipeline 10 and plasma generator capable 20.Unstripped gas supply pipeline 10 comprises fluorine component feeder 11, oxygenato 12 and nitrogen feeder 13.Unstripped gas supply pipeline 10 is supplied with to plasma generator capable 20 and is contained fluorine component, oxygen (O 2) and nitrogen (N 2) unstripped gas.Fluorine component feeder 11 is supplied with the not fluorine component of hydrogen atoms.The instance of fluorine component is CF 4Replaced C F 4Be, can be with perfluocarbon (PFC) C for example 2F 6, C 3F 6And C 3F 8Or SF 6, NF 3Or XeF 2As fluorine component.Oxygenato 12 is supplied with oxygen (O 2).Nitrogen feeder 13 is supplied with nitrogen (N 2).
Unstripped gas supply pipeline 10 does not comprise water (H 2O) feeder.Unstripped gas (almost or fully) does not basically contain hydrogen-containing compound such as water or hydrogeneous component.
Plasma generator capable 20 comprises pair of electrodes 21,21 respect to one another.Although electrode 21,21 is made up of parallel-plate electrode in the accompanying drawings, electrode 21,21 is not limited to this form.Electrode 21,21 can be coaxial cylindrical electrode or pair of rolls electrode (roll electrode), or the combination of roller electrode and plate electrode or cylinder spill electrode (cylindrical concave electrode).The solid dielectric layer (not shown) is placed at least one the apparent surface in the electrode 21,21.In the electrode 21,21 one is connected with power supply 22, and another ground connection.Service voltage from power supply 22 can form for example pulse of interrupted wae, maybe can form continuous wave such as sine wave.Voltage is supplied with from power supply 22, and becomes the plasma span that is under the nearly atmospheric pressure in the space between the electrode 21,21 23.Unstripped gas supply pipeline 10 is connected with the upstream termination of the plasma span 23.The mobile homogenizer (not shown) that is used for gas evenly is incorporated into the plasma span 23 can be placed in the part that unstripped gas supply pipeline 10 is connected with the plasma span 23.Injection nozzle 24 extends from the downstream end of the plasma span 23.The gas flow homogenizer that is used for blowing equably from the plasma span 23 is placed in injection nozzle 24.Object 90 on nozzle 24 and the support 2 is relative.
Nozzle 24 can be integrated in the plasma generator capable 20.Can in nozzle 24, settle the suction section (not shown) of the post-treatment gas that is used to aspirate discharging.
In processing target thing 90, plasma generator capable 20 and nozzle 24 therefore can be static with respect to object 90, or can move with respect to object 90.Under the situation that plasma generator capable 20 and nozzle 24 therefore relatively move with respect to object 90; Plasma generator capable 20 and nozzle 24 can be between the opposite ends of object 90 the reciprocating motion one or many, or can only move once in one way in one direction.
In having the plasma etching equipment 1 of above-mentioned structure, from the CF of fluorine component feeder 11 4, from the O of oxygenato 12 2With N from nitrogen feeder 13 2Mix to produce unstripped gas with predetermined flow-rate ratio.Preferably with the volume content separately of the component of unstripped gas than the CF that is arranged on 7% to 80% 4, 7% to 80% N 2With 5% to 60% O 2
Especially, when wanting etched film 92 to be silicon nitride, unstripped gas preferably contains the O below the 45 volume % 2, more preferably contain the O below the 30 volume % 2, perhaps, more can contain the O below the 20 volume % 2At this moment, the remainder of unstripped gas can be with N 2: CF 4=10: 90 to 90: 10 volume ratio contains N 2And CF 4(fluorine component).CF in the unstripped gas 4(fluorine component) and O 2Summation and N 2Volume flow ratio can be (CF 4+ O 2): N 2=70: 30 to 20: 80, preferred (CF 4+ O 2): N 2=60: 40 to 30: 70, and more preferably, (CF 4+ O 2): N 2=50: 50 to 40: 60.CF in the unstripped gas 4(fluorine component) and O 2Volume flow ratio can be CF 4: O 2=75: 25 to 40: 60, preferred CF 4: O 2=40: 60 to 60: 40, and CF more preferably from about 4: O 2=50: 50.
With unstripped gas (CF 4+ O 2+ N 2) be incorporated into the plasma span 23 of plasma generator capable 20 and with its plasmaization through gas supply pipe line 10.The plasmaization species reaction of formation (generative process) that induces reaction, the generative process of listing below for example:
CF 4+ O 2→ COF 2+ F 2(formula 11)
CF 4+ O 2→ O 2F 2+ CO 2(formula 12)
N 2+ O 2→ NO x(formula 13)
In formula 11 to 13, do not consider the coefficient (this is equally applicable to the formula 21,22,31 and the 41-45 of following description) of each item.
As a result, generation contains nitrogen oxide (NO x) and oxygen containing fluorine activation species 2-carbonyl fluoride (COF for example 2) and oxygen fluoride (OF 2, O 2F) etching gas.Etching gas contains small amount of H F or does not contain HF, and contains low amounts of water or not moisture (H 2O).
Etching gas is ejected into object 90 from ejection section 24.This makes the component of etching gas contact with the part that is covered by organic membrane 93 that contains silicon fiml 92, and the said silicon fiml 92 of containing is processed by silicon nitride, thereby causes the etching reaction generation that following tabulation is shown:
SiN x+ COF 2→ SiF 4+ CO+N 2(formula 21)
SiN x+ O 2F 2→ SiF 4+ NO x(formula 22)
In this way, can etching contain silicon fiml 92.Owing in etching gas, contain on a small quantity or do not contain HF and contain and contain H on a small quantity or not 2Therefore O has small amount of H F or does not have the HF infiltration or penetrate in the organic membrane 93.Therefore, can avoid the interface adhesiveness of organic membrane 93 to reduce, thereby can limit or prevent the protuberance of organic membrane 93 or peel off.Therefore, can be clearly only etching contain the etching part of wanting of silicon fiml 92.
Preferably, in above-mentioned etching gas ejection, object 90 is heated to up to more than 50 degrees centigrade through temperature controller 4.This can prevent that the moisture of atmosphere is attracted on the surface of object 90.Therefore, can prevent to produce HF by the reaction between the oxygen containing fluorine activation species (2-carbonyl fluoride and oxygen fluoride) in moisture in the atmosphere and the etching gas.Thereby, can further guarantee to prevent the protuberance of organic membrane 93 or peel off.Can the temperature upper limit of object 90 be arranged on 120 degrees centigrade, preferably at 100 degrees centigrade.This can prevent that organic membrane 93 from causing sex change by heating.
Constitute the silicon nitride contain silicon fiml 92 a part since with the NO that produces according to formula 13 xContact and oxidized and become silica (formula 31).Silica and oxygen containing fluorine activation species (2-carbonyl fluoride and oxygen fluoride) reaction, thus be etched (formula 32 and formula 33).
SiN x+ NO x→ SiO 2+ N 2(formula 31)
SiO 2+ 2COF 2→ SiF 4+ 2CO 2(formula 32)
SiO 2+ 2O 2F 2→ SiF 4+ 3O 2(formula 33)
Etching reaction speed by the formula 32 and the silica of formula 33 expressions is higher than by the etching reaction speed of formula 21 with the silicon nitride of formula 22 expressions.Therefore, through carrying out NO xOxidation reaction (formula 31) can improve the etch-rate that contains silicon fiml 92.By NO xDue to the speed of oxidation reaction (formula 31) of silicon nitride be higher, so the raising effect of etch-rate is huge.Through improving etch-rate, can shorten the etched processing time.Therefore, can reduce that the moisture in the ambient gas is adsorbed to the chance on the object 90 in etching process, thereby and can further prevent the protuberance of organic membrane safely or peel off.
Because etching gas contains on a small quantity or does not contain HF and contain and contains H on a small quantity or not 2Therefore O can avoid on the part on the surface of object 90, forming the condensate layer of water.Therefore, can avoid by the inhibition due to the condensate layer oxidation reaction and etching reaction.And, the change in etch rate between the part that can avoid forming the part of condensate layer therein and not forming condensate layer therein.Therefore, can prevent the roughening on object 90 surfaces.
Although in the above explanation that provides, be that the prerequisite of silicon nitride has been described embodiment based on wanting the etched silicon fiml 92 that contain, contain silicon fiml 92 and be not limited to silicon nitride.Containing silicon fiml 92 can be by can oxidized nitrogen (NO x) any material of oxidation processes.Containing silicon fiml 92 can be by silicon for example amorphous silicon or polysilicon, carborundum, and silicon oxynitride, siloxicon, carbonitride of silicium etc. are processed.No matter the characteristic of wanting etched film how, preferably the volume content ratio with the component of unstripped gas is arranged on 7 to 80% fluorine component (CF 4Deng), 7 to 80%N 2With 5 to 60%O 2Scope in.
Especially, when wanting etched film 92 by silicon amorphous silicon (a-Si) when processing for example, preferably the volume content ratio with the component of unstripped gas is arranged on 20% to 80%CF 4, 7% to 60%N 2With 5% to 60%O 2, and more preferably be arranged on 40% to 80%CF 4, 7% to 40%N 2With 5% to 40%O 2The temperature of object 90 preferably is arranged on is higher than 50 degrees centigrade to 100 degrees centigrade, and more preferably be arranged on 60 degrees centigrade to 80 degrees centigrade.
When containing silicon fiml 92 by silicon amorphous silicon (a-Si) when processing for example, through contact the etching reaction that following expression takes place with etching gas:
Si+2COF 2→ SiF 4+ 2CO (formula 23)
Si+2O 2F 2→ SiF 4+ 2O 2(formula 24)
When will by the etching reaction speed of the above-mentioned formula 21 and the silicon nitride of formula 22 expressions and by the etching reaction speed ratio of the formula 23 and the silicon of formula 24 expressions than the time, depend on treatment conditions, the former possibly be higher than the latter or the latter possibly be higher than the former.For example, when treatment temperature was about 100 degrees centigrade, the etching reaction speed of silicon nitride was higher than the etching reaction speed of silicon.When treatment temperature was about 60 degrees centigrade, the etching reaction speed of silicon was higher than the etching reaction speed of silicon nitride.
And, as be expressed from the next, silicon is amorphous silicon and NO for example xReaction and be oxidized to silica:
Si+NO x→ SiO 2+ N 2(formula 41)
Silica and oxygen containing fluorine activation species (COF 2, OF 2, O 2F 2Deng) reaction, thereby be etched (formula 32 and formula 33).
And, when containing silicon fiml 92 by carborundum (SiC), silicon oxynitride (SiON), siloxicon (SiOC) or carbonitride of silicium (SiCN) like what be expressed from the next respectively, contain silicon fiml and NO when processing xReaction and be oxidized to silica.Silica and oxygen containing fluorine activation species (COF 2, OF 2, O 2F 2Deng) reaction, thereby be etched (formula 32 and formula 33).
SiC+NO x→ SiO 2+ N 2+ CO 2(formula 42)
SiON+NO x→ SiO 2+ N 2(formula 43)
SiOC+NO x→ SiO 2+ N 2+ CO 2(formula 44)
SiCN+NO x→ SiO 2+ N 2+ CO 2(formula 45)
Under the treatment conditions of above-mentioned embodiment, be higher than directly by the reaction rate of the etched above-mentioned materials of oxygen containing fluorine activation species (Si, SiC, SiON, SiOC, SiCN etc.) by the etching reaction speed of formula 32 with the silica of formula 33 expressions.Therefore, also can improve the etch-rate that contains silicon fiml (Si, SiC, SiON, SiOC, SiCN etc.) safely.Therefore, can shorten the etched processing time, and can reduce that the moisture of ambient gas is attracted to the chance on the object 90 in the etching process.Thereby, together with the effect of the unstripped gas that is substantially free of hydrogen atom, can further prevent the protuberance of organic membrane safely or peel off.
Fig. 2 shows second embodiment of the present invention.Second embodiment relates to the passage etching of the thin-film transistor (TFT) that is used for flat-panel monitor.
To comprise glass baseplate 91 as the pending object 90A of TFT.From these base material 91 sides successively at glass baseplate 91 laminated grating routings 94, gate insulating film 95, semiconductor film 96, metal film 97 and organic membrane 93.Grating routing 94 for example is made up of refractory metal such as Cr and Ta.Gate insulating film 95 for example is made up of SiN.
Semiconductor film 96 for example is made up of amorphous silicon.Semiconductor film 96 is included in membrane portions 96a and the membrane portions 96b on metal film 97 sides of film 96 on base material 91 sides of film 96.Membrane portions 96a is the undoped amorphous silicon of dopant of wherein not mixing.Membrane portions 96b wherein is doped with the for example n type amorphous silicon of P of dopant.The thickness of semiconductor film 96 for example is about 200nm to 300nm.The film thickness of n type amorphous silicon 96b for example is about 60nm to 100nm.
Metal film 97 plays the effect of the signal routing that is used for TFT.For example, for example Ta and Al form metal film 97 by metal.Organic membrane 93 is made up of photoresist.Through will be corresponding to the metal film 97 of channel part as the organic membrane 93 of mask partially-etched.As a result, the n type amorphous silicon film 96b with channel part comes out.In second embodiment, the n type amorphous silicon film 96b of above-mentioned channel part wants the etched silicon fiml that contains.
In the etching gas supply pipeline 3 of plasma etching equipment 1, contain CF 4(fluorine component), O 2And N 2Unstripped gas be introduced in discharge space 23 and produced etching gas by plasmaization.The volume content of the component of unstripped gas is than preferably being arranged on 20% to 80%CF 4, 7% to 60%N 2With 5% to 60%O 2, and more preferably be arranged on 40% to 80%CF 4, 7% to 40%N 2With 5% to 40%O 2CF 4With N 2And O 2The volume flow ratio of summation can be CF 4: (N 2+ O 2)=30: 70 are to 80: 20, preferred CF 4: (N 2+ O 2)=50: 50 were to 80: 20, and N 2With O 2Volume flow ratio can be N 2: O 2=10: 90 to 90: 10.The temperature of object 90 preferably is set at and is higher than 50 degrees centigrade to 100 degrees centigrade, and more preferably is set at 60 degrees centigrade to 80 degrees centigrade.
Unstripped gas contains low amounts of water or not moisture (H 2O).Therefore, etching gas contains small amount of H F or does not contain HF and contain low amounts of water or not moisture (H 2O).Etching gas is ejected on the object 90A.The expose portion of etching gas contact n type amorphous silicon film 96b.This causes the amorphous silicon generation etching reaction ( formula 23,24,41,32 and 33) that constitutes film 96b.As by shown in the chain type doublet among Fig. 2, when etch depth reaches the boundary vicinity of n type amorphous silicon film 96b and non-doped amorphous silicon film 96a, stop etching.Arrange through this, n type amorphous silicon film 96b that can the etched channels part, and non-doped amorphous silicon film 96a is not etched.
The temperature of object 90A when etching method for amorphous silicon fiml 96b preferably is controlled in and is higher than 50 degrees centigrade to 100 degrees centigrade, and more preferably is controlled at 60 degrees centigrade to 80 degrees centigrade.Arrange through this, can strengthen the etch-rate (referring to embodiment 8 and Fig. 7) of amorphous silicon.And, can prevent the thermal denaturation of organic membrane 93.
Through with the flow-ratio control of the component of the temperature of object 90A and unstripped gas in preferable range about above-mentioned amorphous silicon, can increase the selection ratio of amorphous silicon with respect to SiN.Therefore, can reduce the possibility of etching SiN film 95 in the passage etching process.
Because etching gas contains small amount of H F or does not contain HF and contain small amount of H 2O or do not contain H 2Therefore O can avoid Ionized fluorine to penetrate in the organic membrane 93.Therefore, can avoid the interface adhesiveness of organic membrane 93 to reduce.Therefore, can prevent the protuberance of organic membrane 93 or peel off, and can keep organic membrane 93 to be attached on the metal film 97.And, can avoid metal film 97 by HF dissolving (etching).Therefore, can form good channel part.
The invention is not restricted to above-mentioned embodiment, and can carry out multiple variation, as long as essence of the present invention is not changed in such variation.
For example, organic membrane 93 can constitute the base material 91 of object 90.
Atmosphere gas through around the dry object 90 can limit or prevent that the moisture of atmosphere gas is adsorbed on the object 90.
Although at the plasma etching equipment 1 shown in Fig. 1 is so-called remote-type apparatus for processing plasma; Wherein object 90 is placed on 23 outsides, space between the electrode; But plasma etching equipment 1 can be so-called direct type apparatus for processing plasma; Wherein object 90 is placed on the inside in the space 23 between the electrode, and object 90 is by the plasma direct radiation.
[embodiment 1]
Be described below embodiment.The invention is not restricted to the following embodiment that provides.
In first embodiment, unstripped gas is CF 4, oxygen (O 2) and nitrogen (N 2) mist, and measure the etch-rate of silicon nitride film.The flow rate of the component of unstripped gas is following:
CF 4：0.2SLM
O 2：0.2SLM
N 2：0.4SLM
Therefore, each content ratio of component is 25 volume %CF in the unstripped gas 4, 25 volume %O 2With 50 volume %N 2The dew point temperature of unstripped gas is below-45 degrees centigrade, and the amount of the moisture of unstripped gas is substantially zero.
[generation step]
With aforesaid unstripped gas (CF 4+ O 2+ N 2) under atmospheric pressure through plasma generator capable 20 plasmaizations, and produce etching gas.The plasma discharge conditions of plasma generator capable 20 is following:
The thickness in the space 23 between the electrode: 1mm
Apply voltage: Vpp=13kV, 40kHz, wave impulse between the electrode 21,21
The A/F of injection nozzle 24 (size on the direction vertical with the plane of Fig. 1) is 100mm.
[etching reaction step]
The pending object 90 that will have the glass baseplate 91 that is of a size of 5cmx5cm and be coated with silicon nitride film 92 is placed on the platform 2 and moves to and sprays opening 24 belows.Then, aforesaid etching gas is ejected into (fixedly processing method) on the object 90 that remains static from spraying opening 24.Processing time is 1 minute.The temperature of object 90 is a room temperature.
As shown in Figure 3, the measurement result of the etch-rate of nitride silicon fiml is 280nm/ minute.This etch-rate is enough in practice, be used for the manufacturing process of semiconductor device or LCD.
[comparative example 1-1]
As comparative example, will be under the plasma process conditions identical as CF with embodiment 1 4, oxygen (O 2) and the unstripped gas plasmaization of the mixture of argon (Ar), and identical fixedly processing method among use and the embodiment 1, identical processing time and under identical temperature conditions to embodiment 1 in the object 90 identical objects 90 that use carry out the etching reaction step.The flow of the component of unstripped gas is following:
CF 4：0.2SLM
O 2：0.2SLM
Ar：0.4SLM
[comparative example 1-2]
In another comparative example, with ozone (O 3) further join in the etching gas.Ozone uses ozone generator from oxygen (O 2) produce.Output gas (O from ozone generator 2+ O 3) flow be 0.2SLM and output gas ozone concentration be 200g/m 3Respectively, use plasma generator capable 20, with embodiment 1 under the identical plasma process conditions, will have with comparative example 1-1 in the unstripped gas (CF of same composition 4: 0.2SLM, O 2: 0.2SLM, Ar:0.4SLM) plasmaization.Then, will be from the gas of plasma generator capable 20 and gas (O from ozone generator 2+ O 3) mix; And mist is ejected on the pending object 90, and identical fixedly processing method among use and the embodiment 1, identical processing time and under identical temperature conditions to embodiment 1 in the object 90 identical objects 90 that use carry out the etching reaction step.
In Fig. 3, compared the etch-rate in the foregoing description 1, comparative example 1-1 and comparative example 1-2.In embodiment 1, etch-rate and the about 25 times of so high high etch rates of the etch-rate among the comparative example 1-2 among the comparative example 1-1 have been obtained to be about.This has confirmed, when as the etch-rate that is much higher than when in comparative example 1-2, carrying out oxidation of etch-rate raising effect when in embodiment 1, carrying out oxidation through ozone through nitrogen oxide (NOx) effect is provided.
[embodiment 2]
In a second embodiment, as follows, the CF in the unstripped gas 4And O 2Flow rate constant.Change the flow of nitrogen and the etch-rate of measurement silicon nitride film.The flow of the component of unstripped gas is following:
CF 4：0.2SLM
O 2：0.2SLM
N 2: 0 to 1.5SLM
That is, at about 10% to 50 volume %CF 4, about 10% to 50 volume %O 2With 0 to about 80 volume %N 2Scope in regulate the component (CF in the unstripped gas 4+ O 2+ N 2) each content ratio.CF in the unstripped gas 4With the volume flow ratio of oxygen be CF 4: O 2=1: 1.The dew point temperature of unstripped gas is below-45 degrees centigrade and the amount of the moisture of unstripped gas is substantially zero.
[generation step]
Unstripped gas is passed through plasma generator capable 20 plasmaization under atmospheric pressure, and produce etching gas.The plasma discharge conditions of plasma generator capable 20 is following:
The thickness in the space 23 between the electrode: 1mm
Apply voltage: Vpp=13kV, 40kHz, wave impulse between the electrode 21,21
The A/F of injection nozzle 24 (size on the direction vertical with the plane of Fig. 1) is 100mm.
[etching reaction step]
The pending object 90 that will have the glass baseplate 91 that is of a size of 5cmx5cm and be coated with silicon nitride film 92 is placed on the platform 2 and is spraying below the opening 24 through repeatedly (scanning processing method) with the reciprocating motion mode.Then, etching gas is ejected on the object 90 from spraying opening 24.The movement rate of object 90 is 4m/ minute.The temperature of object 90 is a room temperature.
To carry out under the situation that the once reciprocating motion calculation is a single pass, carry out 50 scanning.Then, measure the etch quantity of silicon nitride film.With etch quantity divided by scanning times (50 times) to calculate the etch-rate of each scanning.
The result of embodiment 2 is presented among Fig. 4.
Component (CF in unstripped gas 4+ O 2+ N 2) each content than being about 10 volume % to 40 volume %CF 4, about 10 volume % to 40 volume %O 2With about 20 volume % to 80 volume %N 2The time, reached the etch-rate of certain level.When each content ratio is about 10 volume % to 35 volume %CF 4, about 10 volume % to 35 volume %O 2With about 30 volume % to 80 volume %N 2The time, reached high relatively etch-rate.And, when the content of nitrogen than for about 40 volume % to 70 volume % the time, obtained sufficiently high etch-rate.When the content of nitrogen than for about 50 volume % to 60 volume % the time, obtained maximum etch rate.
[embodiment 3]
In embodiment 3, etching comprises the pending object 90 of organic membrane 93 and checks the effect to organic membrane 93.As object 90, use such sample: it comprises the glass baseplate 91 and the lamination that are of a size of 5cmx5cm has silicon nitride film 92 and organic membrane 93.Containing silicon fiml 92 is that silicon nitride film 92 and organic membrane 93 are acrylic resin film.
The flow of the component of unstripped gas is following:
CF 4：0.2SLM
O 2：0.2SLM
N 2：0.4SLM
Therefore, each content ratio of the component in the unstripped gas is 25 volume %CF 4, 25 volume %O 2With 50 volume %N 2The dew point temperature of unstripped gas is below-45 degrees centigrade and the amount of the moisture of unstripped gas is substantially zero.
[generation step]
With aforesaid unstripped gas (CF 4+ O 2+ N 2) pass through plasma generator capable 20 plasmaization under atmospheric pressure, and produce etching gas.The plasma discharge conditions of plasma generator capable 20 is following:
The thickness in the space 23 between the electrode: 1mm
Apply voltage: Vpp=13kV, 40kHz, wave impulse between the electrode 21,21
The A/F of injection nozzle 24 (size on the direction vertical with the plane of Fig. 1) is 100mm.
[etching reaction step]
The object that is coated with silicon nitride film 90 is placed on the platform 2 and moves to spray opening 24 belows.Then, etching gas is ejected into (fixedly processing method) on the object 90 that remains static from spraying opening 24.Change the processing time with following 6 kinds of modes:
Processing time: 5 seconds, 10 seconds, 20 seconds, 60 seconds, 90 seconds and 120 seconds
Change the temperature of object 90 with following 3 kinds of modes.Via platform 2 heating objects 90.
The temperature of object 90: room temperature (RT), 50 degrees centigrade and 80 degrees centigrade
Table 1 shown with the processing time of object and temperature cause to the protuberance of organic membrane 93 and the check result of stripping conditions.
[table 1]
Figure BDA0000143690010000171
Zero: do not observe the protuberance of organic membrane or peel off
△: the part protuberance of observing organic membrane
*: observe peeling off of organic membrane
Contain on a small quantity or do not contain HF and contain a small amount of or moisture free etching gas through use,, also do not observe the protuberance of organic membrane 93 or peel off even during about 10 seconds injection duration.In fact, pass through to CF therein 4The middle H that adds 2O and the product plasmaization being produced in the etching reaction (formula 2 and formula 3) of HF, even work as the H that is added 2The amount of O is about 0 when spending aspect dew point temperature, is also beginning to spray the protuberance that organic membrane takes place in some seconds the etching gas that contains HF.
At room temperature observe the protuberance of organic membrane and peel off, be adsorbed to the possibility on the object 90 because the long processing time possibly increase atmosphere moisture.Yet, confirmedly be, through heating object 90, even when the processing time is grown, also can limit or prevent the protuberance of organic membrane and peel off.
[embodiment 4]
In embodiment 4, at unstripped gas (CF 4+ O 2+ N 2) total flow and N 2Flow remain unchanged and change CF 4And O 2Between the situation of flow under, measure the etch-rate of silicon nitride.The total flow of unstripped gas is 8SLM.CF 4And O 2The flow summation be 0.4SLM (constant).N 2Flow be 0.4SLM (constant).Each content ratio of component in the unstripped gas is adjusted in about 12 volume % to 45 volume %CF 4, about 5 volume % to 38 volume %O 2With 50 volume %N 2In the scope of (constant).CF 4And O 2Summation and N 2Volume flow ratio be (CF 4+ O 2): N 2=50: 50.The dew point temperature of unstripped gas is below-45 degrees centigrade, and the amount of the moisture of unstripped gas is substantially zero.
[generation step]
Unstripped gas is passed through plasma generator capable 20 plasmaization under atmospheric pressure, and produce etching gas.The plasma discharge conditions of plasma generator capable 20 is following:
The thickness in the space 23 between the electrode: 1mm
Apply voltage: Vpp=13kV, 40kHz, wave impulse between the electrode 21,21
The A/F of injection nozzle 24 (size on the direction vertical with the plane of Fig. 1) is 100mm.
[etching reaction step]
The pending object 90 that will have the glass baseplate 91 that is of a size of 5cmx5cm and be coated with silicon nitride film 92 is placed on the platform 2 and moves to and sprays opening 24 belows.Then, etching gas is ejected into (fixedly processing method) on the object 90 that remains static from spraying opening 24, and measures etch-rate.Processing time is 1 minute.The temperature of object 90 is a room temperature.
Fig. 5 is presented at trunnion axis and shows CF 4And O 2Between the situation of flow rate ratio under the measurement result of etch-rate.All flow rate ratio places of inspection have reached the etch-rate of certain level in embodiment 4.Work as O 2With CF 4+ O 2The percentage of summation in the scope of 25 volume % to 60 volume % the time, reached high relatively etch-rate.And, work as O 2Percentage in the scope of 40 volume % to 60 volume % the time, reached sufficiently high etch-rate.That is the CF in the total flow of unstripped gas, 4And O 2Corresponding percentage at about 20 volume % to 38 volume %CF 4With about 12 volume % to 30 volume %O 2Scope in the time, reached high relatively etch-rate.And, the CF in the total flow of unstripped gas 4And O 2Corresponding percentage at about 20 volume % to 30 volume %CF 4With about 20 volume % to 30 volume %O 2Scope in the time, reached sufficiently high etch-rate.At O 2The relatively little zone of volume in and at CF 4The relatively little zone of volume in, etch-rate is low relatively.Infer that this maybe be owing to oxygen containing fluorine activation species COF for example 2, OF 2And O 2F 2The minimizing of growing amount.
[embodiment 5]
In embodiment 5, silicon nitride is to want etched object.Preparation comprises the sample 90 of the glass baseplate 91 that is coated with silicon nitride.Sample 90 has the size of 50mmx50mm.Sample 90 is placed on the platform 2 of plasma etching equipment 1 and and is ejected on the sample 90 etching gas.
The temperature of sample 90 is 90 degrees centigrade.
The flow of the component of unstripped gas is following:
CF 4：0.3SLM
O 2：0.1SLM
N 2：0.2SLM
The dew point temperature of unstripped gas is below-45 degrees centigrade and the amount of the moisture of unstripped gas is substantially zero.
The plasma discharge conditions of plasma generator capable 20 is following:
The thickness of gaps between electrodes 23: 1mm
Input power: 325W (direct current 130V, 2.5A converts pulse into)
Apply voltage and frequency: Vpp=15kV, 40kHz between the electrode 21,21
The A/F of injection nozzle 24 (size on the direction vertical with the plane of Fig. 1) is 100mm.
Etching period is 60 seconds and stops etching in the stage that also film 92 is not removed fully.
Use XPS (x-ray photoelectron power spectrum) to analyze before etch processes and the surface composition of sample 90 afterwards.Adopt Kratos Analytical, the Model AXIS-165 that Inc. makes is as XPS.
Analysis result is presented in the table 2.
The surface composition of the sample before handling contains 36.24% oxygen and 24.69% nitrogen, and the surface composition after handling contains 62.57% oxygen and 1.81% nitrogen.
[table 2]
C?1s O?1s N?1s Si?2p F?1s
Before the processing 9.10 36.24 24.69 28.78 1.19
After the processing 6.18 62.57 1.81 25.49 3.95
[％]
Fig. 6 is presented at and handles before and the measurement result of the XPS spectrum of the sample 90 of embodiment 5 afterwards.
Although Si-N key peak before handling, mainly occurs, after handling, Si-N key peak almost disappears, and Si-O key peak instead mainly occurs.
The result who more than provides is illustrated in the oxidation that silicon nitride takes place in the etching process.
[embodiment 6]
In embodiment 6, use silicon nitride (SiNx) as wanting etched object, the component (CF of inspection unstripped gas 4+ O 2+ N 2) flow-rate ratio and the relation between the etch-rate.Preparation comprises the sample 90 of the glass baseplate 91 of the film 92 that is coated with silicon nitride.Sample 90 has the size of 50mmx50mm.Sample 90 is placed on the platform 2 of plasma etching equipment 1 and and is ejected on the sample 90 etching gas.
As shown in table 3, the corresponding discharge of three kinds of components of regulating unstripped gas relative to one another is so that the total flow of unstripped gas becomes 1SLM.The dew point temperature of unstripped gas is below-45 degrees centigrade, and the amount of the moisture of unstripped gas is substantially zero.
The temperature that is provided with of sample 90 is 100 degrees centigrade.
Plasma generator capable 20 is 10mm/ second with respect to the relative displacement speed of sample substrates 90.
The condition of plasma of plasma generator capable 20 is following:
The thickness of gaps between electrodes 23: 1mm
Input power: 325W (direct current 130V, 2.5A converts pulse into)
Apply voltage and frequency: Vpp=15kV, 40kHz between the electrode 21,21
The A/F of injection nozzle 24 (size on the direction vertical with the plane of Fig. 1) is 100mm.
The The measured results show of the etch-rate among the embodiment 6 is in table 3.Etch-rate in the table 3 is meant on the horizontal direction of sample 90 at Fig. 1 with respect to the etch quantity of plasma generator capable 20 folk prescriptions when only moving one time.
[table 3]
Figure BDA0000143690010000211
From the above susceptible of proof as a result that provides, when unstripped gas contains 7 to 80 volume %CF 4, 7 to 80 volume %N 2With 5 to 60 volume %O 2The time, can be with the etch-rate etching SiNx of certain level.And, when unstripped gas contains the O below the 45 volume % 2, the O below the preferred 30 volume % 2, the O below the 20 volume % more preferably 2The time, guaranteed high etch-rate.
[embodiment 7]
In embodiment 7, use amorphous silicon (a-Si) as wanting etched object, the component (CF of inspection unstripped gas 4+ O 2+ N 2) flow-rate ratio and the relation between the etch-rate of component.Preparation comprises the sample 90 of the glass baseplate 91 of the film 92 that is coated with amorphous silicon.Sample 90 is placed on the platform 2 of plasma etching equipment 1 and and is ejected on the sample 90 etching gas.Other treatment conditions are identical with those treatment conditions among the embodiment 6.
Etch-rate The measured results show among the embodiment 7 is in table 4.Etch-rate in the table 4 is meant on the horizontal direction of sample 90 at Fig. 1 with respect to the etch quantity of plasma generator capable 20 folk prescriptions when only moving one time.
[table 4]
Figure BDA0000143690010000221
From the above susceptible of proof as a result that provides, when unstripped gas contains 7 to 80 volume %CF 4, 7 to 80 volume %N 2With 5 to 60 volume %O 2The time, can be with the etch-rate etching method for amorphous silicon of certain level.And, when unstripped gas contains the above CF of 20 volume % 4With the following N of 60 volume % 2The time, guaranteed high etch-rate.And, when unstripped gas contains the above CF of 40 volume % 4, the following N of 40 volume % 2With the following O of 40 volume % 2The time, guaranteed high etch-rate.
[embodiment 8]
In embodiment 8, amorphous silicon (a-Si) is to want etched object.Preparation comprises the sample 90 of the glass baseplate 91 of the film 92 that is coated with amorphous silicon.Sample 90 has the size of 50mmx50mm.Sample 90 is placed on the platform 2 of plasma etching equipment 1 and and is ejected on the sample 90 etching gas.Use heater 4 temperature of sample 90 to be controlled in 30 to 100 degrees centigrade the scope.
The flow of the component of unstripped gas is following:
CF 4：0.2SLM
O 2：0.2SLM
N 2：0.2SLM
The dew point temperature of unstripped gas is below-45 degrees centigrade, and the amount of the moisture of unstripped gas is substantially zero.
The plasma discharge conditions of plasma generator capable 20 is following:
The thickness of gaps between electrodes 23: 1mm
Input power: 325W (direct current 130V, 2.5A converts pulse into)
Apply voltage and frequency: Vpp=15kV, 40kHz between the electrode 21,21
The A/F of injection nozzle 24 (size on the direction vertical with the plane of Fig. 1) is 100mm.
Fig. 7 is presented at the measurement result of the etch-rate under the different room temperature conditions.
What confirm is, can be near normal temperature (about 30 degrees centigrade) etching method for amorphous silicon.
When temperature was higher than 50 degrees centigrade, etch-rate increased greatly.Especially, in 60 to 80 degrees centigrade temperature range, etch-rate is enough high.
Be higher than 80 degrees centigrade and even obtained enough etch-rates 100 degrees centigrade temperature.
Therefore, when wanting etched contain silicon fiml 92 and be amorphous silicon the time, in temperature controlling step, the temperature of object preferably is controlled at and is higher than 50 degrees centigrade to 100 degrees centigrade, and more preferably at 60 to 80 degrees centigrade.
And, under any temperature conditions, all almost do not observe the protuberance of mask 93 or peel off.
Industrial applicability
The present invention can for example be used to make the polarizing coating and manufacturing semiconductor device of LCD device.
List of numerals
1 plasma etching equipment
2 supports
3 etching gas supply pipelines
4 temperature controllers
10 unstripped gas supply pipelines
11 fluorine component feeders
12 oxygenatos
13 nitrogen feeders
20 plasma generator capables
21 electrodes
22 power supplys
The plasma span between 23 electrodes
24 injection nozzles
90, the object that 90A is pending
91 base materials
92 contain silicon fiml
93 organic membrane
94 grating routings
95 amorphous silicon films (containing silicon fiml)
96a undoped amorphous silicon film
96b doped amorphous silicon film
97 metal films

Claims (16)

1. method that contains silicon fiml that is used for the pending object of etching, said object comprises said silicon fiml and the organic membrane of containing, and the said silicon fiml that contains can oxidized nitrogen (NOx) oxidation, and said method comprises:
Be incorporated into the generation step that produces etching gas in the plasma span that is under the nearly atmospheric pressure through the unstripped gas that will be substantially free of hydrogen atom; With
The etching reaction step that said etching gas is contacted with said object;
Wherein said unstripped gas contains the fluorine component of the not hydrogen atoms of 7 to 80 volume %, the nitrogen (N of 7 to 80 volume % 2) and the oxygen (O of 5 to 60 volume % 2).
2. the etching method that is used for according to claim 1, wherein said unstripped gas contain the oxygen below the 45 volume %.
3. the etching method that is used for according to claim 1 and 2, wherein said unstripped gas contain the oxygen below the 30 volume %.
4. according to each described etching method that is used in the claim 1 to 3, the summation of wherein said fluorine component and oxygen and the volume flow ratio of nitrogen are 70: 30 to 20: 80, and the volume flow ratio of said fluorine component and oxygen is 75: 25 to 40: 60.
5. the etching method that is used for according to claim 4, the volume flow ratio of the summation of fluorine component and oxygen and nitrogen described in the wherein said unstripped gas is 60: 40 to 30: 70.
6. according to claim 4 or the 5 described etching methods that are used for, the volume flow ratio of the summation of fluorine component and oxygen and nitrogen described in the wherein said unstripped gas is 50: 50 to 40: 60.
7. according to each described etching method that is used in the claim 4 to 6, the volume flow ratio of fluorine component and oxygen described in the wherein said unstripped gas is 60: 40 to 40: 60.
8. the etching method that is used for according to claim 1, wherein said unstripped gas contain above said fluorine component of 20 volume % and the nitrogen below the 60 volume %.
9. the etching method that is used for according to claim 8, wherein said unstripped gas contain the above said fluorine component of 40 volume %, the nitrogen below the 40 volume % and the oxygen below the 40 volume %.
10. according to each described etching method that is used in the claim 1 to 9; The wherein said silicon fiml that contains contains in following any: silicon (Si), silicon nitride (SiNx), carborundum (SiC); Silicon oxynitride (SiON), siloxicon (SiOC) and carbonitride of silicium (SiCN).
11. according to each described etching method that is used in the claim 1 to 7, the wherein said silicon fiml that contains is made up of silicon nitride (SiNx).
12. according to claim 1, the 8 or 9 described etching methods that are used for, the wherein said silicon fiml that contains is made up of amorphous silicon.
13. according to each described etching method that is used in the claim 1 to 12, wherein said method also comprises the temperature controlling step that the temperature of said object is controlled at 50 degrees centigrade to 120 degrees centigrade.
14. the etching method that is used for according to claim 12 wherein is controlled at the temperature of said object and is higher than 50 degrees centigrade to 100 degrees centigrade.
15. according to claim 12 or the 14 described etching methods that are used for, wherein the temperature with said object is controlled at 60 degrees centigrade to 80 degrees centigrade.
16. according to claim 12, the 14 or 15 described etching methods that are used for; Wherein said object comprises and saidly contains silicon fiml, metal film and said organic membrane by what amorphous silicon was formed; Said silicon fiml, said metal film and the said organic membrane of containing stacks gradually; The said said membrane portions that contains silicon fiml in said metal film side that contains silicon fiml is doped agent and mixes, and said membrane portions is by said etchant gas.
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Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9390937B2 (en) * 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US9711359B2 (en) * 2015-08-13 2017-07-18 Lam Research Corporation Shadow trim line edge roughness reduction
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (en) 2018-02-28 2022-06-01 美商應用材料股份有限公司 Systems and methods to form airgaps
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
CN112921326B (en) * 2021-01-22 2022-11-08 广东威圳兴技术有限公司 Surface treatment process for automobile part die-casting aluminum alloy

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040152328A1 (en) * 2003-02-04 2004-08-05 Taiwan Semiconductor Manufacturing Company Bi-level resist structure and fabrication method for contact holes on semiconductor substrates
JP2004319285A (en) * 2003-04-16 2004-11-11 Matsushita Electric Works Ltd Plasma processing device and plasma processing method
JP2009099880A (en) * 2007-10-19 2009-05-07 Sekisui Chem Co Ltd Plasma etching apparatus
WO2009080615A2 (en) * 2007-12-21 2009-07-02 Solvay Fluor Gmbh Process for the production of microelectromechanical systems

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07331449A (en) * 1994-06-06 1995-12-19 Yuzo Mori Method for diminishing residual impurity in plasma cvm

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040152328A1 (en) * 2003-02-04 2004-08-05 Taiwan Semiconductor Manufacturing Company Bi-level resist structure and fabrication method for contact holes on semiconductor substrates
JP2004319285A (en) * 2003-04-16 2004-11-11 Matsushita Electric Works Ltd Plasma processing device and plasma processing method
JP2009099880A (en) * 2007-10-19 2009-05-07 Sekisui Chem Co Ltd Plasma etching apparatus
WO2009080615A2 (en) * 2007-12-21 2009-07-02 Solvay Fluor Gmbh Process for the production of microelectromechanical systems

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