CN102497690B - A kind of OLED illuminating device - Google Patents
A kind of OLED illuminating device Download PDFInfo
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- CN102497690B CN102497690B CN201110426054.0A CN201110426054A CN102497690B CN 102497690 B CN102497690 B CN 102497690B CN 201110426054 A CN201110426054 A CN 201110426054A CN 102497690 B CN102497690 B CN 102497690B
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Abstract
The invention discloses a kind of OLED illuminating device, transparent anode can be divided into multiple anode block, for each anode block is equipped with a thin-film transistor to control the upper electric current of anode block.Because electric current on each anode block needs the path that flows through shorter, therefore on single anode block, there will not be obvious shade distinctions.And due to the power supply of all anode blocks identical, therefore their brightness is too.Therefore, the present invention effectively can improve the uniformity of OLED illuminating device brightness.
Description
Technical field
The present invention relates to OLED technical field, particularly relate to a kind of OLED illuminating device.
Background technology
Day by day serious along with global energy crisis, energy-conserving product is more and more subject to people's attention.In Lighting Industry, Organic Light Emitting Diode OLED has the feature such as energy-conservation, frivolous due to it and is widely used.
The structure of traditional OLED illuminating device as shown in Figure 1, comprising: transparent anode 003, organic luminous layer 002 and metallic cathode 001.In actual applications, in order to improve robustness, aesthetic property, the durability of product, the devices such as cover plate can be installed additional for OLED illuminating device.Be the OLED product after a kind of comparatively conventional assembling shown in Fig. 2, also comprise except OLED illuminating device: bonnet 005, drier 007, packaging plastic 006 and base plate glass 004.In order to make whole OLED illuminating device can be luminous, need to be connected power supply on the different sides of transparent anode 003 with metallic cathode 001, as shown in Figure 3.Such electric current will enter in organic luminous layer 002 through transparent anode 003, thus emits beam.
But the resistance of transparent anode 003 is comparatively large, and such electric current is longer in the length through transparent anode 003, and the electric current flowing into organic luminous layer 002 relevant position will be less.Because the brightness of organic luminous layer 002 is directly proportional to the electric current flowed through, therefore in this case, OLED illuminating device just there will be the phenomenon of brightness irregularities.
Summary of the invention
For solving the problems of the technologies described above, the embodiment of the present invention provides a kind of OLED illuminating device, and to solve the problem of brightness disproportionation, technical scheme is as follows:
A kind of OLED illuminating device, comprise metallic cathode and organic luminorphor, also comprise: the transparent anode be made up of multiple anode block separated from one another and multiple thin-film transistor the same number of with described anode block, the control end of described multiple thin-film transistor links together and connection control signal end, the first end of described multiple thin-film transistor links together and connects positive source, and the second end of described multiple thin-film transistor is connected one by one with multiple anode block respectively.
Preferably, described thin-film transistor is low-temperature polysilicon Thin Film Transistor (TFT), amorphous silicon type thin-film transistor, metal-oxide thin-film transistor or OTFT.
Preferably, the first end in each thin-film transistor in described multiple thin-film transistor links together with the second end of self.
Preferably, the material of described thin-film transistor control end, first end and/or the second end is low-resistance metal material.
Preferably, described low-resistance metal material is Mo, MoN/Al/MoN, Mo/Al/Mo, Cr/Cu/Cr or Ti/Cu/Ti.
Preferably, described anode block is provided with the breach for placing described thin-film transistor.
Preferably, also comprise: the bonnet be connected to each other and base plate glass, form an inner chamber after described bonnet is connected with base plate glass, described bonnet and base plate glass are by described metallic cathode, organic luminorphor, anode block and thin-film transistor parcel in the lumen.
Preferably, also comprise: be arranged on the drier on intracavity sidewall.
Preferably, described bonnet is connected by packaging plastic with base plate glass.
By applying above technical scheme, transparent anode can be divided into multiple anode block by a kind of OLED illuminating device provided by the invention, for each anode block is equipped with a thin-film transistor to control the upper electric current of anode block.Because electric current on each anode block needs the path that flows through shorter, therefore on single anode block, there will not be obvious shade distinctions.And due to the power supply of all anode blocks identical, therefore their brightness is too.Therefore, the present invention effectively can improve the uniformity of OLED illuminating device brightness.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of traditional OLED illuminating device;
Fig. 2 is the structural representation of the OLED product after a kind of comparatively conventional assembling;
Fig. 3 is the flow path schematic diagram of electric current on OLED illuminating device under prior art;
The structural representation of a kind of OLED illuminating device Anodic that Fig. 4 provides for the embodiment of the present invention;
The structural representation of the another kind of OLED illuminating device Anodic that Fig. 5 provides for the embodiment of the present invention;
The structural representation of the another kind of OLED illuminating device Anodic that Fig. 6 provides for the embodiment of the present invention.
Embodiment
Technical scheme in the present invention is understood better in order to make those skilled in the art person, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, should belong to the scope of protection of the invention.
A kind of OLED illuminating device, comprise metallic cathode and organic luminorphor, also comprise: the transparent anode be made up of multiple anode block separated from one another and multiple thin-film transistor the same number of with described anode block, the control end of described multiple thin-film transistor links together and connection control signal end, the first end of described multiple thin-film transistor links together and connects positive source, and the second end of described multiple thin-film transistor is connected one by one with multiple anode block respectively.
Wherein, the first end in each thin-film transistor in described multiple thin-film transistor can link together with the second end of self.Wherein, described thin-film transistor can be low-temperature polysilicon Thin Film Transistor (TFT), amorphous silicon type thin-film transistor, metal-oxide thin-film transistor or OTFT.
In actual applications, the material of described thin-film transistor control end, first end and/or the second end can be low-resistance metal material.
Because thin-film transistor has N-type and two kinds, P type, those skilled in the art are it is easily understood that N-type transistor and P-type crystal pipe three pin gate poles, source electrode are different with the distribution of drain electrode.Wherein, control end is gate pole; When first end is source electrode, the second end is drain electrode; When first end is for drain electrode, the second end is source electrode.First be described for N-type TFT below.
A kind of OLED illuminating device provided by the invention, comprise metallic cathode and organic luminorphor, as shown in Figure 4, also comprise: the transparent anode be made up of multiple anode block 008 separated from one another and multiple N-type TFT 009 the same number of with described anode block, the gate pole G of described multiple N-type TFT 009 links together and connection control signal end V
s, the drain D of described multiple N-type TFT 009 links together and connects positive source V
dd, the source S of described multiple N-type TFT 009 is connected one by one with multiple anode block 008 respectively.
For convenience of representing, the connection layout being only anode and N-type TFT shown in Fig. 4, it will be appreciated by persons skilled in the art that anode is also connected with organic luminorphor, organic luminorphor is connected with negative electrode, forms OLED illuminating device.
As control signal end V
scontrol signal when being high level, N-type TFT 009 conducting, electric current flows into metallic cathode through N-type TFT 009, anode block 008, organic luminorphor, thus makes organic luminorphor luminous, reaches illuminating effect.
Wherein, N-type TFT 009 can be low-temperature polysilicon Thin Film Transistor (TFT), amorphous silicon type thin-film transistor, metal-oxide thin-film transistor or OTFT.The material of the gate pole of N-type TFT 009, drain electrode and/or source electrode can be low-resistance metal material.Low-resistance metal material can be Mo, MoN/Al/MoN, Mo/Al/Mo, Cr/Cu/Cr or Ti/Cu/Ti.
Certainly, as shown in Figure 5, in other embodiments of the present invention, the gate pole G of N-type TFT 009 and drain D can link together.That is, make control signal by power supply signal simultaneously.Like this, in time switching on power, control signal end is exactly high potential, N-type TFT 009 conducting, thus make electric current flow through anode block 008 through the drain D of N-type TFT 009, source S, and eventually pass through organic luminorphor and arrive metallic cathode, thus make organic luminorphor luminous.
The shape of anode block 008 can be rectangle.Because OLED illuminating device outer space is larger, therefore can on the outside of anode block 008 arrange current through N-type TFT 009, although electric current can stop a part of light through N-type TFT 009, but because N-type TFT 009 is less, the illuminating effect impact of the light therefore stopped on overall OLED illuminating device is limited.Certainly, the shape of anode block 008 can also be the various shape such as triangle or regular hexagon, and the present invention does not limit at this.
Certainly, as shown in Figure 4, anode block 008 can also be provided with the breach for placing described N-type TFT 009.Smooth in order to what keep outside OLED illuminating device, breach for placing described N-type TFT 009 can be set on anode block 008, such N-type TFT 009 just can be placed in this breach, thus avoid the outside being placed on anode block 008, make outside OLED illuminating device more smooth.Certainly, the position of breach can set as required, considers the convenience of wiring, can be arranged on the corner of anode block 008.
Certainly, in a kind of OLED illuminating device that other embodiments of the present invention provide, can also comprise: the bonnet be connected to each other and base plate glass, form an inner chamber after described bonnet is connected with base plate glass, described metallic cathode, organic luminorphor, anode block 008 and thin-film transistor 009 wrap up in the lumen by described bonnet and base plate glass.
It is easily understood that after bonnet and base plate glass wrap up, the firmness degree of described OLED illuminating device obviously increases.Wherein, bonnet can be connected by packaging plastic with base plate glass.
Certainly, at a kind of OLED illuminating device that other embodiments of the present invention provide, can also comprise: be arranged on the drier on intracavity sidewall.Drier can effectively prevent moisture from causing corrosion and interference to OLED illuminating device.
Thin-film transistor in above embodiment is N-type transistor, Figure 6 shows that the structural representation of OLED illuminating device Anodic when thin-film transistor is P-type crystal pipe.
A kind of OLED illuminating device provided by the invention, can be divided into multiple anode block by transparent anode, for each anode block is equipped with a thin-film transistor to control the upper electric current of anode block.Because electric current on each anode block needs the path that flows through shorter, therefore on single anode block, there will not be obvious shade distinctions.And due to the power supply of all anode blocks identical, therefore their brightness is too.Therefore, the present invention effectively can improve the uniformity of OLED illuminating device brightness.
Each embodiment in this specification all adopts the mode of going forward one by one to describe, between each embodiment identical similar part mutually see, what each embodiment stressed is the difference with other embodiments.
The above is only the specific embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (1)
1. an OLED illuminating device, comprise metallic cathode and organic luminorphor, it is characterized in that, also comprise: the transparent anode be made up of multiple anode block separated from one another and multiple thin-film transistor the same number of with described anode block, the control end of described multiple thin-film transistor links together and connection control signal end, the first end of described multiple thin-film transistor links together and connects positive source, and the second end of described multiple thin-film transistor is connected one by one with multiple anode block respectively;
Described thin-film transistor is low-temperature polysilicon Thin Film Transistor (TFT), amorphous silicon type thin-film transistor, metal-oxide thin-film transistor or OTFT;
The material of described thin-film transistor control end, first end and/or the second end is low-resistance metal material, is specially Mo, MoN/Al/MoN, Mo/Al/Mo, Cr/Cu/Cr or Ti/Cu/Ti;
Control end in each thin-film transistor in described multiple thin-film transistor links together with the first end of self;
Described anode block is provided with the breach for placing described thin-film transistor;
Also comprise: the bonnet be connected to each other and base plate glass, form an inner chamber after described bonnet is connected with base plate glass, described bonnet and base plate glass are by described metallic cathode, organic luminorphor, anode block and thin-film transistor parcel in the lumen;
Be arranged on the drier on intracavity sidewall;
Described bonnet is connected by packaging plastic with base plate glass;
Described thin-film transistor is N-type or P-type crystal pipe, and N-type transistor and P-type crystal pipe three pin gate poles, source electrode are different with the distribution of drain electrode; Wherein, control end is gate pole; When first end is source electrode, the second end is drain electrode; When first end is for drain electrode, the second end is source electrode;
Wherein, when described thin-film transistor is N-type transistor, when the control signal of control signal end is high level, N-type TFT conducting, electric current flows into metallic cathode through N-type TFT, anode block, organic luminorphor, thus makes organic luminorphor luminous.
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| CN201110426054.0A CN102497690B (en) | 2011-12-16 | 2011-12-16 | A kind of OLED illuminating device |
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| CN201110426054.0A CN102497690B (en) | 2011-12-16 | 2011-12-16 | A kind of OLED illuminating device |
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| CN102497690A CN102497690A (en) | 2012-06-13 |
| CN102497690B true CN102497690B (en) | 2016-03-16 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI576007B (en) * | 2015-11-23 | 2017-03-21 | 財團法人工業技術研究院 | Driving method of light emitting device and light emitting device |
| CN107256871B (en) * | 2017-06-27 | 2019-09-27 | 上海天马微电子有限公司 | Micro- LED display panel and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1384696A (en) * | 2001-03-30 | 2002-12-11 | 三洋电机株式会社 | Semiconductor device and semiconductor device making mask |
| CN101055888A (en) * | 2006-04-12 | 2007-10-17 | 株式会社日立显示器 | Organic electroluminescence display device |
| CN101123222A (en) * | 2007-08-31 | 2008-02-13 | 吉林大学 | Making method for multi-crystal TFT array of active driven organic EL display screen |
| CN102915699A (en) * | 2011-08-04 | 2013-02-06 | 昆山维信诺显示技术有限公司 | Active OLED (organic light-emitting diode) illumination device |
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- 2011-12-16 CN CN201110426054.0A patent/CN102497690B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1384696A (en) * | 2001-03-30 | 2002-12-11 | 三洋电机株式会社 | Semiconductor device and semiconductor device making mask |
| CN101055888A (en) * | 2006-04-12 | 2007-10-17 | 株式会社日立显示器 | Organic electroluminescence display device |
| CN101123222A (en) * | 2007-08-31 | 2008-02-13 | 吉林大学 | Making method for multi-crystal TFT array of active driven organic EL display screen |
| CN102915699A (en) * | 2011-08-04 | 2013-02-06 | 昆山维信诺显示技术有限公司 | Active OLED (organic light-emitting diode) illumination device |
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