CN102494988A - Method for analyzing total dose radiation effect of deep submicron device - Google Patents
Method for analyzing total dose radiation effect of deep submicron device Download PDFInfo
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Abstract
The invention provides a method for analyzing a total dose radiation effect of a deep submicron device. The method comprises the following steps of: primarily establishing a device model according to test data of a deep submicron device prototype with a shallow-channel isolation groove structure; positioning a top region and a bottom region for a shallow-channel isolation groove of the device model according to the distribution of the doping concentration of a substrate; and according to test data of a radiated device, adding different equivalent simulation electric charges into the top region and the bottom region to obtain simulated data which is in fit with the test data so as to determine the effect of the equivalent simulation electric charges in the top region and the bottom region of the deep submicron device model, thereby determining the effect of the total dose radiation effect in the top region and the bottom region of the deep submicron device prototype. The steps in the method are simple. The total dose radiation effect of the deep submicron device can be accurately simulated. The influence of the total dose radiation effect on different positions of the device can be reflected. The reliable basis is provided for reinforcing the total dose radiation resistance effect of the device.
Description
Technical field
The present invention relates to a kind of modeling method of device, particularly relate to a kind of method that is used to analyze deep-submicron element total dose radiation effect.
Background technology
The ionising radiation total dose effect is meant that electronic devices and components or system are under the radiation environment for a long time, forms the phenomenon of oxide trap electric charge and interface state electric charge in insulation course (mainly being oxide layer) accumulation.This cumulative effect can cause the degeneration of performance of semiconductor device.Performance degradation behind the MOS element total dose radiation mainly shows as the increase of threshold voltage shift and OFF leakage current.The drift of threshold voltage is mainly owing to trapped charge in the gate oxide causes; The increase of OFF leakage current causes mainly due to the isolation oxide trapped charge.Deep-submicron device grid oxygen very thin (several nm), insensitive to total dose irradiation.Total dose irradiation causes that the increase of deep-submicron device OFF leakage current is mainly owing to trapped charge in the shallow trench isolation oxide causes.This OFF leakage current can increase power consumption of integrated circuit, and the reliability of integrated circuit is caused bigger negative effect, and becoming present stage has an important problem to be solved.
The reinforcing of the deep-submicron device being carried out the anti-integral dose radiation effect is main means that address the above problem now; Yet; The effect of total radiation dosage effect in deep-submicron device zones of different often has bigger difference, and the reinforcing of simply adopting single means to carry out device does not often reach desirable effect yet.Therefore, if can know the concrete action effect of total radiation dosage effect in deep-submicron device zones of different at present, the reinforcing of resistant to total dose total radiation dosage effect is had very big impetus.
Summary of the invention
The shortcoming of prior art in view of the above; The object of the present invention is to provide a kind of method that is used to analyze deep-submicron element total dose radiation effect; Obtaining the concrete action effect of total radiation dosage effect in deep-submicron device zones of different, for the reinforcing of resistant to total dose total radiation dosage effect provides reliable foundation.
For realizing above-mentioned purpose and other relevant purposes, the present invention provides a kind of method that is used to analyze deep-submicron element total dose radiation effect, and said method may further comprise the steps at least:
1) provide one have a shallow trench isolation channels structure deep-submicron device prototype, and said deep-submicron device prototype tested obtain first test I
Ds-V
GsCurve has the deep-submicron device model of shallow trench isolation channels structure according to preliminary foundation of the technological parameter of said deep-submicron device prototype, and obtains first Simulation with I
Ds-V
GsCurve is then through changing said first test I of parameter preset match
Ds-V
GsThe curve and first Simulation with I
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GsCurve is to confirm the preset parameter value of said deep-submicron device model;
2) define top area and bottom section to the shallow trench isolation channels of said deep-submicron device model respectively according to the substrate doping distributed data, to obtain final deep-submicron device model;
3) said deep-submicron device prototype is carried out the radiation of preset dose respectively, and the deep-submicron device prototype through overshoot is tested, to obtain second test I
Ds-V
GsCurve;
4) according to said second test I
Ds-V
GsCurve, top area and the bottom section to said deep-submicron device model adds the equivalent simulation electric charge respectively, and the density of passing through to change said equivalent simulation electric charge is to obtain and said second test I
Ds-V
GsSecond Simulation with I of curve fitting
Ds-V
GsCurve is then according to said second Simulation with I
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GsCurve is confirmed the effect of said equivalent simulation electric charge at said deep-submicron device model top area and bottom section, to confirm the effect of integral dose radiation effect at said deep-submicron device prototype top area and bottom section.
In the method that is used for analyzing deep-submicron element total dose radiation effect of the present invention, said deep-submicron device model adopts the Silvaco simulation softward to build.The model of selecting for use comprises the conventional Drift diffusion model that is used to describe carrier transport, is used to describe the generation-compound SRH model and the FLDMOB model of the speed of description saturation effect.
In the method that is used for analyzing deep-submicron element total dose radiation effect of the present invention; The distance of the upper surface of the shallow trench isolation channels of said deep-submicron device model to lower surface is 390nm; Said top area is the zone between said upper surface to the distance plane of said upper surface 30nm, and said bottom section is apart from the zone between plane to the said lower surface of said upper surface 30nm.
In the method that is used for analyzing deep-submicron element total dose radiation effect of the present invention, said equivalent simulation electric charge evenly distributes at said bottom section in even distribution of said top area and said equivalent simulation electric charge.
In the method that is used for analyzing deep-submicron element total dose radiation effect of the present invention, described deep-submicron device prototype is the high tension apparatus that core devices, the input and output device that is used for IO port that is used to realize the major function circuit and being used to provides the voltage of cell erase and programming operation.
As stated; The method that is used to analyze deep-submicron element total dose radiation effect of the present invention; Have following beneficial effect: this method is according to the test data Primary Construction device model with deep-submicron device prototype of shallow trench isolation channels structure; Orient top area and bottom section to the shallow trench isolation channels of said device model according to the substrate doping distribution; And the test data of foundation device after overshoot is added the simulated data of the different acquisition of equivalent simulation electric charge with test data match to said top area and bottom section; With of the effect of definite said equivalent simulation electric charge, thereby confirm of the effect of integral dose radiation effect at said deep-submicron device prototype top area and bottom section at said deep-submicron device model top area and bottom section.Method step is simple, can simulate deep-submicron element total dose radiation effect more accurately, and can react the influence of integral dose radiation effect to the device different parts, for the reinforcing of the anti-integral dose radiation effect of device provides reliable foundation.
Description of drawings
Fig. 1 is shown as the schematic flow sheet that is used to analyze the method for deep-submicron element total dose radiation effect of the present invention.
Fig. 2 a is shown as the I that is used for analyzing the method core devices prototype of deep-submicron element total dose radiation effect of the present invention
Ds-V
GsCurve is with accumulated dose change curve synoptic diagram.
Fig. 2 b is shown as the I that is used for analyzing the method core device model of deep-submicron element total dose radiation effect of the present invention
Ds-V
GsCurve is with accumulated dose change curve synoptic diagram.
Fig. 3 a is shown as the I that is used for analyzing the method input and output device prototype of deep-submicron element total dose radiation effect of the present invention
Ds-V
GsCurve is with accumulated dose change curve synoptic diagram.
Fig. 3 b is shown as the I that is used for analyzing the method input and output device model of deep-submicron element total dose radiation effect of the present invention
Ds-V
GsCurve is with accumulated dose change curve synoptic diagram.
Fig. 4 a is shown as the I that is used to analyze the method mesohigh device prototype of deep-submicron element total dose radiation effect of the present invention
Ds-V
GsCurve is with accumulated dose change curve synoptic diagram.
Fig. 4 b is shown as the I that is used to analyze the method mesohigh device model of deep-submicron element total dose radiation effect of the present invention
Ds-V
GsCurve is with accumulated dose change curve synoptic diagram.
Embodiment
Below through specific instantiation embodiment of the present invention is described, those skilled in the art can understand other advantages of the present invention and effect easily by the content that this instructions disclosed.The present invention can also implement or use through other different embodiment, and each item details in this instructions also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
See also Fig. 1 to Fig. 4 b.Need to prove; The diagram that is provided in the present embodiment is only explained basic conception of the present invention in a schematic way; Satisfy only show in graphic with the present invention in relevant assembly but not component count, shape and plotted when implementing according to reality; Kenel, quantity and the ratio of each assembly can be a kind of random change during its actual enforcement, and its assembly layout kenel also maybe be more complicated.
See also Fig. 1～Fig. 2 b, as shown in the figure, the present invention provides a kind of method that is used to analyze deep-submicron element total dose radiation effect, and said method may further comprise the steps at least:
See also Fig. 1, S11～S12 at first carries out step 1), provide one have a shallow trench isolation channels structure deep-submicron device prototype, and said deep-submicron device prototype tested obtain first test I
Ds-V
GsCurve has the deep-submicron device model of shallow trench isolation channels structure according to preliminary foundation of the technological parameter of said deep-submicron device prototype, and obtains first Simulation with I
Ds-V
GsCurve is then through changing said first test I of parameter preset match
Ds-V
GsThe curve and first Simulation with I
Ds-V
GsCurve is to confirm the preset parameter value of said deep-submicron device model.
In the present embodiment, said deep-submicron device prototype adopts 0.18 μ m embedded flash memory prepared, is the dual-in-line ceramic package.Isolation method is that shallow trench isolation leaves that (shallow trench isolation, STI), (High density plasma, HDP) deposition is prepared to adopt high-density plasma.Sti structure is the overfilled structure, and the angle of inclination is 87 °.In concrete implementation process, said deep-submicron device prototype adopts the ON biasing, and promptly grid meets VDD, and all the other respectively hold ground connection.Test curve is a transfer characteristic curve, and drain terminal voltage is 0.05V, source end and substrate ground connection, and grid end scanning voltage is 0.5V～VDD.In the process of building the deep-submicron device model; At first make up the sti structure and the channel region on both sides; Position according to said sti structure and channel region forms the active area substrate that comprises source region, channel region and drain region then, defines source electrode, drain electrode, gate oxide and grid at last.Other detailed process parameter like the substrate doping distributed data, can obtain from the concrete manufacture process of said deep-submicron device prototype.The electric charge that radiation induces mainly is distributed in the STI sidewall, forms the leakage path of source electrode to drain electrode.In the present embodiment, said modeling method adopts the Silvaco simulation softward to simulate.The model of selecting for use comprises the conventional Drift diffusion model that is used to describe carrier transport, is used to describe the generation-compound SRH model and the FLDMOB model of the speed of description saturation effect.After tentatively setting up model, through to first test I
Ds-V
GsThe curve and first Simulation with I
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GsThe match of curve can be confirmed the preset parameter value that model is required, and according to this parameter preset value defined more near the device model of practical devices.
See also Fig. 1, S13, as shown in the figure, carry out step 2 then), define top area and bottom section to the shallow trench isolation channels of said deep-submicron device model respectively according to the substrate doping distributed data, to obtain final deep-submicron device model; Wherein, said substrate doping distributed data is the intrinsic parameter of deep-submicron device prototype, can from concrete manufacture process, obtain.
Need to prove that the deep-submicron device generally adopts the trap that falls back (retrograde well), top area is defined as 1/2 position of substrate doping peak value.In the present embodiment; The distance of the upper surface of the shallow trench isolation channels of said deep-submicron device model to lower surface is 390nm; The substrate doping peak is along shallow trench isolation oxide sidewall 60nm place; Therefore, defining said top area is the zone between said upper surface to the distance plane of said upper surface 30nm, defines said bottom section and is the zone between plane to the said lower surface of the said upper surface 30nm of distance.
See also Fig. 1, S14, as shown in the figure, then carry out step 3), said deep-submicron device prototype is carried out the radiation of preset dose respectively, and the deep-submicron device prototype through overshoot is tested, to obtain second test I
Ds-V
GsCurve.In concrete implementation process, adopt preset radiation dose rate that said deep-submicron device prototype is carried out irradiation, the control exposure time is to reach required total radiation dose.Said device prototype through overshoot is carried out I
Ds-V
GsThe test of curve is to obtain second test I through the deep-submicron device prototype of overshoot
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GsThe curve group.
See also Fig. 1, S15～S16 carries out step 4) at last, according to said second test I
Ds-V
GsCurve, top area and the bottom section to said deep-submicron device model adds the equivalent simulation electric charge respectively, and the density of passing through to change said equivalent simulation electric charge is to obtain and said second test I
Ds-V
GsSecond Simulation with I of curve fitting
Ds-V
GsCurve is then according to said second Simulation with I
Ds-V
GsCurve is confirmed the effect of said equivalent simulation electric charge at said deep-submicron device model top area and bottom section, to confirm the effect of integral dose radiation effect at said deep-submicron device prototype top area and bottom section.Wherein, said equivalent simulation electric charge evenly distributes at said bottom section in even distribution of said top area and said equivalent simulation electric charge, and can add different magnitudes in said top area with bottom section.Particularly, add acquisition of equivalent simulation electric charge and said second test I through top area and bottom section to said deep-submicron device model
Ds-V
GsSecond Simulation with I of curve fitting
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GsCurve obtains this moment in top area and equivalent simulation electric density that bottom section added, just can confirm in top area and the bottom section the equivalent simulation electric charge to curve influence and effect.Because the integral dose radiation effect of said deep-submicron device prototype is through the form that electric charge accumulates device to be exerted an influence; And the electric charge of total radiation dose and device accumulation has strict correlativity; Therefore, the density through the simulation electric weight that adds can reflect accurately that deep-submicron element total dose radiation effect is in the top area of device prototype and the influence and the effect of bottom section.
See also Fig. 2 a～Fig. 2 b; As shown in the figure; In the present embodiment; Described deep-submicron device prototype is the core devices that is used to realize the major function circuit, and Fig. 2 a and Fig. 2 b are shown as be used for analyzing the method core devices prototype of deep-submicron element total dose radiation effect and the I of core devices model of the present invention respectively
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GsCurve is with accumulated dose change curve synoptic diagram.Wherein, the length breadth ratio of device is 10um/0.18um, and drain terminal voltage is 0.05V, the ON biasing, and Qf is for adding equivalent simulation total amount of electric charge, the equivalent simulation electric density that on behalf of top area, T add, the equivalent simulation electric density that on behalf of bottom section, D add.The radiation dose that said core devices is adopted is respectively 100krad (Si), 200krad (Si), 250krad (Si), 300krad (Si), 400krad (Si), 500krad (Si), obtains the prototype I of this core devices
Ds-V
GsThe curve group shown in Fig. 2 a, can be known from curve, when accumulated dose is 100krad (Si), compares with the predose curve, and significant change does not take place the I-V curve, explains that the accumulated dose tolerance of this device reaches 100krad (Si).When accumulated dose was 200krad (Si), device creepage reached 5 * 10
-10A; Subthreshold region does not almost have the Hump effect.Along with the increase of accumulated dose, device creepage increases gradually.Equivalent simulation electric charge to top area and bottom section interpolation equal densities can obtain and prototype I
Ds-V
GsThe Simulation with I of curve fitting
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GsCurve, as being that the corresponding equivalent simulation electric charge of device prototype of 200krad (Si) is Qf=T1.2e12+D1.2e12 with radiation dose, just to add equivalent simulation electric density be 1.2e12/cm to top area
2, it is 1.2e12/cm that bottom section adds equivalent simulation electric density
2, hence one can see that, and when device did not have the Hump effect, top area and bottom section added the equivalent simulation electric charge of equal densities.
See also Fig. 3 a～Fig. 3 b; Described deep-submicron device prototype is the input and output device that is used for IO port, and Fig. 3 a and Fig. 3 b are shown as be used for analyzing the method input and output device prototype of deep-submicron element total dose radiation effect and the I of input and output device model of the present invention respectively
Ds-V
GsCurve is with accumulated dose change curve synoptic diagram.Wherein, the length breadth ratio of device is 10um/0.35um, and drain terminal voltage is 0.05V, the ON biasing, and Qf is for adding equivalent simulation total amount of electric charge, the equivalent simulation electric density that on behalf of top area, T add, the equivalent simulation electric density that on behalf of bottom section, D add.The radiation dose that said core devices is adopted is respectively 50krad (Si), 80krad (Si), 100krad (Si), 150krad (Si), 200krad (Si), 500krad (Si), obtains the prototype I of this input and output device
Ds-V
GsThe curve group can be known from curve, and when accumulated dose was 50krad (Si), the Hump effect promptly appearred in device, and leakage current increases not obvious.When accumulated dose was 80krad (Si), the Hump effect was more obvious, and leakage current is increased to 4 * 10
-10A.Along with accumulated dose increases, the Hump effect is more and more obvious, and leakage current increases gradually.When accumulated dose reached 500kard (Si), the leakage current increasing degree was very big, reaches 5 * 10
-6A.Add bigger equivalent simulation electric charge in top area, and can obtain and prototype I in the less equivalent simulation electric density of bottom section interpolation
Ds-V
GsThe Simulation with I of curve fitting
Ds-V
GsCurve; And; The difference of the equivalent simulation electric density that the more obvious top area of Hump effect is added and the equivalent simulation electric density of bottom section is big more, and hence one can see that, when the Hump effect appears in device; Top area is added the density of the density of equivalent simulation electric charge greater than bottom section interpolation equivalent simulation electric charge, and the difference of the equivalent simulation electric density of the equivalent simulation electric density of the more obvious top area interpolation of Hump effect and bottom section is big more.
See also Fig. 1 and Fig. 4 a～Fig. 4 b; Described deep-submicron device prototype is the high tension apparatus that is used to provide the voltage of cell erase and programming operation, and Fig. 4 a and Fig. 4 b are shown as be used to analyze the method mesohigh device prototype of deep-submicron element total dose radiation effect and the I of high tension apparatus model of the present invention respectively
Ds-V
GsCurve is with accumulated dose change curve synoptic diagram.Wherein, the length breadth ratio of device is 10um/0.8um, and drain terminal voltage is 0.05V, the ON biasing, and Qf is for adding equivalent simulation total amount of electric charge, the equivalent simulation electric density that on behalf of top area, T add, the equivalent simulation electric density that on behalf of bottom section, D add.The radiation dose that said core devices is adopted is respectively 5krad (Si), 10krad (Si), 20krad (Si), 40krad (Si), obtains the prototype I of this high tension apparatus
Ds-V
GsThe curve group can be known from curve, and when accumulated dose was 5krad (Si), the Hump effect promptly appearred in device, and leakage current increases not obvious.When accumulated dose was 10krad (Si), the Hump effect was more obvious.Along with accumulated dose increases, the Hump effect is more and more obvious, and leakage current increases gradually.When accumulated dose reached 40kard (Si), the leakage current increasing degree was very big, reaches 3 * 10
-7A.Add bigger equivalent simulation electric charge in top area, and can obtain and prototype I in the less equivalent simulation electric density of bottom section interpolation
Ds-V
GsThe Simulation with I of curve fitting
Ds-V
GsCurve; And; The difference of the equivalent simulation electric density that the more obvious top area of Hump effect is added and the equivalent simulation electric density of bottom section is big more, and hence one can see that, when the Hump effect appears in device; Top area is added the density of the density of equivalent simulation electric charge greater than bottom section interpolation equivalent simulation electric charge, and the difference of the equivalent simulation electric density of the equivalent simulation electric density of the more obvious top area interpolation of Hump effect and bottom section is big more.
Can know through analog result: core devices does not have tangible Hump effect, and the shallow trench isolation oxide top is consistent with the trapped charge quantity that introduce the bottom; Input and output device Hump effect is obvious, and the amount of charge that introduce at the shallow trench isolation oxide top is bigger than bottom quantity, and this explanation Hump effect mainly causes owing to isolation oxide top trapped charge; The substrate concentration of high tension apparatus is lower, and is comparatively responsive to accumulated dose, introduces the lesser amt trapped charge and gets final product matched curve.The Hump effect of high tension apparatus is obvious, and the amount of charge that introduce at same shallow trench isolation oxide top is bigger than the bottom.With the The above results is foundation; Can select to formulate Scheme of Strengthening to the different effects to the device zones of different of integral dose radiation effect; To reach the effect that good anti-integral dose radiation effect is reinforced, for example, can know according to above step; If the radiation that need reduce the deep-submicron device induces the increase of OFF leakage current, can suitably improve along the substrate concentration of its shallow trench isolation channels bottom section.
In sum; The method that is used to analyze deep-submicron element total dose radiation effect of the present invention; According to test data Primary Construction device model with deep-submicron device prototype of shallow trench isolation channels structure; Orient top area and bottom section to the shallow trench isolation channels of said device model according to the substrate doping distribution; And the test data of foundation device after overshoot is added the simulated data of the different acquisition of equivalent simulation electric charge with test data match to said top area and bottom section; With of the effect of definite said equivalent simulation electric charge, thereby confirm of the effect of integral dose radiation effect at said deep-submicron device prototype top area and bottom section at said deep-submicron device model top area and bottom section.Method step is simple, can simulate deep-submicron element total dose radiation effect more accurately, and can react the influence of integral dose radiation effect to the device different parts, for the reinforcing of the anti-integral dose radiation effect of device provides reliable foundation.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention.Any be familiar with this technological personage all can be under spirit of the present invention and category, the foregoing description is modified or is changed.Therefore, have common knowledge the knowledgeable in the affiliated such as technical field, must contain by claim of the present invention not breaking away from all equivalence modifications of being accomplished under disclosed spirit and the technological thought or changing.
Claims (6)
1. a method that is used to analyze deep-submicron element total dose radiation effect is characterized in that, said method may further comprise the steps at least:
1) provide one have a shallow trench isolation channels structure deep-submicron device prototype, and said deep-submicron device prototype tested obtain first test I
Ds-V
GsCurve has the deep-submicron device model of shallow trench isolation channels structure according to preliminary foundation of the technological parameter of said deep-submicron device prototype, and obtains first Simulation with I
Ds-V
GsCurve is then through changing said first test I of parameter preset match
Ds-V
GsThe curve and first Simulation with I
Ds-V
GsCurve is to confirm the preset parameter value of said deep-submicron device model;
2) define top area and bottom section to the shallow trench isolation channels of said deep-submicron device model respectively according to the substrate doping distributed data, to obtain final deep-submicron device model;
3) said deep-submicron device prototype is carried out the radiation of preset dose respectively, and the deep-submicron device prototype through overshoot is tested, to obtain second test I
Ds-V
GsCurve;
4) according to said second test I
Ds-V
GsCurve, top area and the bottom section to said deep-submicron device model adds the equivalent simulation electric charge respectively, and the density of passing through to change said equivalent simulation electric charge is to obtain and said second test I
Ds-V
GsSecond Simulation with I of curve fitting
Ds-V
GsCurve is then according to said second Simulation with I
Ds-V
GsCurve is confirmed the effect of said equivalent simulation electric charge at said deep-submicron device model top area and bottom section, to confirm the effect of integral dose radiation effect at said deep-submicron device prototype top area and bottom section.
2. the method that is used to analyze deep-submicron element total dose radiation effect according to claim 1, said deep-submicron device model adopt the Silvaco simulation softward to build.
3. the method that is used to analyze deep-submicron element total dose radiation effect according to claim 2 is characterized in that: the model that said Silvaco simulation softward is selected for use comprises the conventional Drift diffusion model that is used to describe carrier transport, is used to describe the generation-compound SRH model and the FLDMOB model of the speed of description saturation effect.
4. the method that is used to analyze deep-submicron element total dose radiation effect according to claim 1; It is characterized in that: the distance of the upper surface of the shallow trench isolation channels of said deep-submicron device model to lower surface is 390nm; Said top area is the zone between said upper surface to the distance plane of said upper surface 30nm, and said bottom section is apart from the zone between plane to the said lower surface of said upper surface 30nm.
5. the method that is used to analyze deep-submicron element total dose radiation effect according to claim 1 is characterized in that: said equivalent simulation electric charge evenly distributes at said bottom section in even distribution of said top area and said equivalent simulation electric charge.
6. the method that is used to analyze deep-submicron element total dose radiation effect according to claim 1 is characterized in that: described deep-submicron device prototype is the core devices that is used to realize the major function circuit, the input and output device that is used for IO port and the high tension apparatus that is used to provide cell erase and programming operation voltage.
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| CN113030679A (en) * | 2021-03-05 | 2021-06-25 | 电子科技大学 | Laser simulation dosage rate effect equivalent coefficient calculation method of semiconductor device |
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| CN107305593A (en) * | 2016-04-21 | 2017-10-31 | 中国科学院上海微系统与信息技术研究所 | A kind of modeling method of SOI MOSFET total dose irradiation models |
| CN107305593B (en) * | 2016-04-21 | 2020-12-01 | 中国科学院上海微系统与信息技术研究所 | Modeling method of SOI MOSFET total dose irradiation model |
| CN113030679A (en) * | 2021-03-05 | 2021-06-25 | 电子科技大学 | Laser simulation dosage rate effect equivalent coefficient calculation method of semiconductor device |
| CN113030679B (en) * | 2021-03-05 | 2022-01-28 | 电子科技大学 | Laser simulation dosage rate effect equivalent coefficient calculation method of semiconductor device |
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