CN102491637A - Phosphate glass having resistor being of order of 10<11> ohm.cm and preparation method thereof - Google Patents
Phosphate glass having resistor being of order of 10<11> ohm.cm and preparation method thereof Download PDFInfo
- Publication number
- CN102491637A CN102491637A CN2011103632141A CN201110363214A CN102491637A CN 102491637 A CN102491637 A CN 102491637A CN 2011103632141 A CN2011103632141 A CN 2011103632141A CN 201110363214 A CN201110363214 A CN 201110363214A CN 102491637 A CN102491637 A CN 102491637A
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- CN
- China
- Prior art keywords
- glass
- preparation
- order
- ohm
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000005365 phosphate glass Substances 0.000 title abstract 3
- 239000011521 glass Substances 0.000 claims abstract description 29
- 238000003723 Smelting Methods 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 238000005482 strain hardening Methods 0.000 claims description 2
- 238000010257 thawing Methods 0.000 claims description 2
- 238000010792 warming Methods 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 239000002245 particle Substances 0.000 abstract description 4
- 229910019142 PO4 Inorganic materials 0.000 abstract description 3
- 238000002474 experimental method Methods 0.000 abstract description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 abstract description 3
- 239000010452 phosphate Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 abstract 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 1
- 239000002075 main ingredient Substances 0.000 abstract 1
- 239000005357 flat glass Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000006124 Pilkington process Methods 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- -1 metals ion Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Landscapes
- Glass Compositions (AREA)
Abstract
The invention discloses phosphate glass having a resistor being of the order of 10<11> ohm.cm and a preparation method thereof, belonging to the technique of special glass, particularly the technical field of detector glass. The phosphate glass disclosed herein is phosphate low-resistivity glass comprising P2O5 as a main ingredient and comprising Fe2O3, Na2O, Bi2O3, and V2O5 as the rest ingredients. The invention simultaneously provides a corresponding preparation method. At normal temperature, the volume resistivity of the low-resistivity glass is of the order of 10<11> ohm.cm. The particle counting rate of an MRPC detector made from the glass can reach 20 kHz/cm<2>, and the MRPC detector can be widely applied in large-scale physical experiments.
Description
Technical field
The present invention relates to property glass, a kind of specifically volume specific resistance (normal temperature) is 10
11The low specific resistance glass of Ω-cm order of magnitude.
Background technology:
Sheet glass (also being float glass) has application widely in the every field of national economy and people's lives.Along with development of science and technology, sheet glass is also all the more general in the application in scientific research field.Resistive plate chamber detector (RPC) and many air gaps resistance board chamber (MRPC) detector as last century, the nineties grew up all use sheet glass as main raw.The volume specific resistance (normal temperature) of conventional glass is 10
12～10
13Between the Ω cm, it can think a kind of semi-conductor, and its electrical conduction mechanism is the migration of the monovalent base metals ion in the glass and the faint ionic conduction that produces.The particle counting rate that adopts the MRPC that conventional float glass processes is less than 1KHz/cm
2Some large-scale Physical Experiment (like the breadboard heavy particle Physical Experiment of German GSI accelerator) requires MRPC can reach 20KHz/cm
2CR, like this, simple glass is to have satisfied not to require.In order to improve the particle counting rate of MRPC, need to adopt the glass of low-resistivity, the body resistance of glass will be hanged down to 10
10～10
11Ω cm.Simple glass is a kind of ionic semiconductor, and our low specific resistance glass of development is a kind of electron conductive type glass.Its electrical conduction mechanism can jump over (small polaron hopping) with little polaron and explains.When the transition metal oxide that contains in the glass, the coexistence of two or more valence state metals ion, so glass has the semi-conductor behavior, its as a result the volume specific resistance of glass reduce.The present invention is based on Fe
2O
3 
Behavior and the electron conductive type glass developed.
Summary of the invention:
The present invention has abandoned classical ionic conductive glass making method and the electron type conductive glass of a kind of low-resistivity of developing.
The invention is characterized in.Be a kind of phosphate type low specific resistance glass, its moity and mole percent level are:
P
2O
5：52％-56％ Fe
2O
3：20％-30％
Na
2O：4％-12％ Bi
2O
3：0％-6％
V
2O
5：5％-14％
Its preparation method contains following steps successively:
Step (1) is heated to 1050 ℃-1080 ℃ to smelting furnace, said P
2O
5, Fe
2O
3, V
2O
5, Na
2O, Bi
2O
3Add said thawing furnace by the evenly mixed back of the proportioning of setting, be warming up to 1300-1350 ℃ again, melted 4 hours-4.5 hours, after stirring, make said blended stock be molten state;
Step (2), the blended stock of the said molten state that obtains step (1) are cast in 430 ℃-450 ℃ the mould, get into lehre, 450 ℃ of annealing, after cold working, obtain required phosphate type low specific resistance glass.
The invention has the advantages that:
(1) the present invention can prepare 10
11The low specific resistance glass of the Ω cm order of magnitude.
(2) the glass machinery intensity of the present invention's preparation is high, and processability is good.
(3) glass of the present invention is nontoxic, harmless, does not harm HUMAN HEALTH, is beneficial to environment protection.
Embodiment:
Instance 1-3.
Instance 1-3 compositing formula and operational condition are seen table 1 and table 2 respectively.
The product performance of instance 1-3 are seen table 3.
Table 1 compositing formula
| Instance 1 | Instance 2 | Instance 3 | |
| P 2O 5 | 53 | 56 | 52 |
| Fe 2O 3 | 30 | 20 | 25 |
| Na 2O | 12 | 4 | 9 |
| Bi 2O 3 | 0 | 6 | 4 |
| V 2O 5 | 5 | 14 | 10 |
Table 2 operational condition
Table 3 product performance
Claims (2)
1. a low specific resistance glass is characterized in that, its moity and mole percent level are:
SiO
2：48％-55％ Fe
2O
3：10％-14％
Na
2O：15％-26％ AL
2O
3：3％-8％
CaO：0.5％-5％ B
2O
3：0％-9％
PbO：2％-7％
2. the preparation method of a kind of low specific resistance glass as claimed in claim 1 is characterized in that, contains following steps successively:
Step (1) is heated to 1220 ℃-1250 ℃ to smelting furnace, said SiO
2, Fe
2O
3, Na
2O, AL
2O
3, CaO, B
2O
3, PbO adds said thawing furnace by the evenly mixed back of the proportioning of setting, and is warming up to 1400-1450 ℃ again, after stirring, makes said blended stock be molten state;
Step (2), the blended stock of the said molten state that obtains step (1) are cast in 450 ℃-480 ℃ the mould, get into lehre, 490 ℃ of annealing, after cold working, obtain required silicate-type glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103632141A CN102491637B (en) | 2011-11-16 | 2011-11-16 | Phosphate glass having resistor being of order of 10<11> ohm.cm and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103632141A CN102491637B (en) | 2011-11-16 | 2011-11-16 | Phosphate glass having resistor being of order of 10<11> ohm.cm and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102491637A true CN102491637A (en) | 2012-06-13 |
| CN102491637B CN102491637B (en) | 2013-12-04 |
Family
ID=46183507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103632141A Expired - Fee Related CN102491637B (en) | 2011-11-16 | 2011-11-16 | Phosphate glass having resistor being of order of 10<11> ohm.cm and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102491637B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103663983A (en) * | 2013-12-17 | 2014-03-26 | 佛山市粤峤陶瓷技术创新服务中心 | Manufacturing method of anti-static plate glass |
| CN110981186A (en) * | 2020-01-02 | 2020-04-10 | 中国建筑材料科学研究总院有限公司 | Low-resistivity electronic conductive glass and preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6103648A (en) * | 1998-05-28 | 2000-08-15 | Circon Corporation | Bulk conducting glass compositions and fibers |
| CN1785867A (en) * | 2005-11-04 | 2006-06-14 | 中国建筑材料科学研究院 | Canductire glass having secodary electron emission characteristic |
| CN101475307A (en) * | 2008-12-26 | 2009-07-08 | 清华大学 | Low specific resistance glass and preparation thereof |
-
2011
- 2011-11-16 CN CN2011103632141A patent/CN102491637B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6103648A (en) * | 1998-05-28 | 2000-08-15 | Circon Corporation | Bulk conducting glass compositions and fibers |
| CN1785867A (en) * | 2005-11-04 | 2006-06-14 | 中国建筑材料科学研究院 | Canductire glass having secodary electron emission characteristic |
| CN101475307A (en) * | 2008-12-26 | 2009-07-08 | 清华大学 | Low specific resistance glass and preparation thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103663983A (en) * | 2013-12-17 | 2014-03-26 | 佛山市粤峤陶瓷技术创新服务中心 | Manufacturing method of anti-static plate glass |
| CN103663983B (en) * | 2013-12-17 | 2016-05-18 | 佛山市粤峤陶瓷技术创新服务中心 | A kind of manufacture method of antistatic plate glass |
| CN110981186A (en) * | 2020-01-02 | 2020-04-10 | 中国建筑材料科学研究总院有限公司 | Low-resistivity electronic conductive glass and preparation method and application thereof |
| CN110981186B (en) * | 2020-01-02 | 2022-10-14 | 中国建筑材料科学研究总院有限公司 | Low-resistivity electronic conductive glass and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102491637B (en) | 2013-12-04 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: BEIJING BEIBO YAKANG GLASS CO., LTD. Free format text: FORMER OWNER: BEIJING YAKANG SPECIAL GLASS CO., LTD. Effective date: 20141113 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20141113 Address after: 100084 Beijing City, Haidian District Tsinghua Yuan Patentee after: TSINGHUA University Patentee after: Beijing North Boya Kang Glass Co.,Ltd. Address before: 100084 Haidian District Tsinghua Yuan Beijing No. 1 Patentee before: Tsinghua University Patentee before: BEIJING YAKANG SPECIAL GLASS Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131204 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |