CN102487436A - Sensing pixel array and sensing apparatus - Google Patents
Sensing pixel array and sensing apparatus Download PDFInfo
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- CN102487436A CN102487436A CN2010105725042A CN201010572504A CN102487436A CN 102487436 A CN102487436 A CN 102487436A CN 2010105725042 A CN2010105725042 A CN 2010105725042A CN 201010572504 A CN201010572504 A CN 201010572504A CN 102487436 A CN102487436 A CN 102487436A
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Abstract
A sensing pixel array comprises a plurality of pixels. The pixels are configured in the array. The each pixel is operated in an exposure period and a readout period and is generated a readout signal. The each pixel comprises: a sensing unit and a sampling unit. The sensing unit senses light in the exposure period so as to generate a sensing signal. The sampling unit samples the sensing signal in the readout signal so as to generate a sensing output signal which is taken as the readout signal. In the exposure period, the sampling unit is taken as a memory cell, stores an input signal and outputs an access output signal to be the readout signal.
Description
Technical field
The present invention relates to a kind of sensor pixel array, particularly relate to a kind of sensing apparatus, sensor pixel array wherein has sensing function and memory function.
Background technology
Generally speaking, (CMOS image sensor CI8) has higher degree of integration compared with the CCD image sensor to the CMOS image sensor.Therefore, CIS can be embedded on the chip with the image sensing processor, to carry out preferable image processing.The quality of image generally is the quantity that depends on line buffer.Therefore, the CIS that has a higher quality of image needs the line buffer of a greater number.Yet a large amount of line buffers causes CIS to have higher cost and in CIS, occupies bigger area.
Therefore, expectation provides a kind of sensing apparatus, and its sensor pixel array has sensing and memory function, to reduce the quantity of line buffer in the sensing apparatus.
Summary of the invention
The present invention provides a kind of sensor pixel array, and it comprises a plurality of pixels.More said pixel arrangement is in array.Read output signal is operated and produced to each pixel between exposure period and between reading duration.Each pixel comprises sensing cell and sampling unit.Sensing cell between exposure period in light sensing to produce sensing signal.Sampling unit between reading duration in the sampling sensing signal be used as read output signal to produce sensing output signal.In between exposure period, sampling unit is used as read output signal as memory cell to store input signal and output access output signal.
The present invention provides a kind of sensing apparatus, and it comprises a plurality of pixels, first decoding circuit and second decoding circuit.Said pixel arrangement is in array.Read output signal is operated and produced to each pixel between exposure period and between reading duration.Each pixel comprises sensing cell and sampling unit.Sensing cell between exposure period in light sensing to produce sensing signal.Sampling unit between reading duration in the sampling sensing signal be used as read output signal to produce sensing output signal.In between exposure period, sampling unit is used as read output signal as memory cell to store input signal and output access output signal.First decoding circuit between reading duration in the control sampling unit the said sensing signal and produce sensing output signal so that sampling unit is taken a sample.Second decoding circuit between exposure period in the control sampling unit so that sampling unit stores input signal and output access output signal.
In certain embodiments, sensing apparatus also comprises reading circuit, in order to read out from take a sample the unit read output signal and handle read output signal.
Description of drawings
Fig. 1 representes the sensing apparatus according to the embodiment of the invention;
Fig. 2 representes the pixel according to the embodiment of the invention; And
Fig. 3 is illustrated in the sequential chart of control signal and reset signal among Fig. 2.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, hereinafter is special lifts a preferred embodiment, and combines accompanying drawing, elaborates as follows.
Fig. 1 representes the sensing apparatus according to the embodiment of the invention.Consult Fig. 1, sensing apparatus 1 comprises sensor pixel array 10, array decoding circuit 11 and 12, reading circuit 13 and commutation circuit 14.Sensor pixel array 10 comprises a plurality of pixels (being shown among Fig. 2), and these pixel arrangement are on a plurality of row and a plurality of row of array.Each pixel is operable between exposure period and between reading duration, and produces read output signal SR.The said pixel that decoding circuit 11 and 12 is used for controlling sensing pel array 10 is to produce a plurality of read output signal SR.Reading circuit 13 is used for reading the said read output signal SR from sensor pixel array 10.Commutation circuit 14 couples a plurality of voltage sources.In this embodiment, be that example is explained with five voltage source V S1～VS5.Voltage source V S1～VS5 provides voltage AVDD, AVDD * 3/4, AVDD * 2/4, AVDD * 1/4 and AGND (ground connection) respectively.Commutation circuit 14 is used for selecting believing provides one voltage among voltage source V S1～VS5 to sensor pixel array 10.
Fig. 2 representes according to the embodiment of the invention, each pixel in the sensor pixel array 10.In Fig. 2, explain as example that with pixel in the sensor pixel array 10 other pixel then has the framework identical with Fig. 2.In order to clearly demonstrate, Fig. 2 also representes commutation circuit 14.Commutation circuit 14 comprises switch 14a～14e, couples respectively between voltage source V S1～VS5 and the pixel 2.Consult Fig. 2, pixel 2 comprises sensing cell 20 and sampling unit 21.Sensing cell 20 between exposure period light sensing to produce sensing signal SS.In this embodiment, sensing cell 20 comprises optical diode PD, and its negative electrode couples node N20, and its anode couples ground connection (for example voltage source V S5).Between exposure period, optical diode PD light sensing is to produce sensing signal SS.Between reading duration, sampling unit 21 is used for taking a sample said sensing signal SS to produce sensing output signal, as read output signal SR.Between exposure period, the operation of sampling unit 21 is just as internal storage location, in order to store input signal and output access output signal as read output signal SR.
Consult Fig. 2, sampling unit 21 comprises transfer element 21a, reset cell 21b and source follower 21c.In this embodiment, transfer element 21a comprises transistor T 20, and its control end receives control signal SC, and its input couples sensing cell 20 in node N20, and its output couples the diffusion node FN that floats.Reset cell 21b comprises transistor T 21, and its control end receives reset signal SRE, and its input couples commutation circuit 14, and its output couples the diffusion node FN that floats.Source follower 21c comprises transistor T 22.The control end of transistor T 22 couples the diffusion node FN that floats, and its input couples voltage source V S1 (AVDD), and its output couples and reads node NR.In this embodiment, floating diffusion node FN can store charge.In other embodiments, have storage unit and be coupled between unsteady diffusion node FN and the ground connection, and the unsteady diffusion node FN of said storage unit replacement comes store charge.Said storage unit can be the parasitic capacitance of transistor T 22 among substantial capacitor or the source follower 32c.
Fig. 3 is illustrated in the sequential chart of control signal SC and reset signal SRE among Fig. 2.Hereinafter, the operation of pixel 2 will be consulted Fig. 1 to 3 and explained.PEXP starts from time point T1 and ends at time point T2 between exposure period, and PRED starts from time point T2 and ends at time point T3 between reading duration.Before PESP between exposure period, conductings among the switch 14a～14c of commutation circuit 14, for example switch 14d conducting, and corresponding voltage AVDD * 1/4 is provided to the output of transistor T 21.Simultaneously, decoding unit 11 activations (assert) reset signal SRE is with turn-on transistor T21, and also activation control signal SC is with turn-on transistor T20.By this, transistor T 21 is sent to the position standard of its output with the unsteady diffusion node FN that resets with voltage VDD * 1/4 that receives.Therefore, unsteady diffusion node FN is in the base bits standard in the continuing operation among the PRED between reading duration.In addition, because transistor T 20 conductings, the electric charge on the negative electrode of optical diode PD is refreshed (refresh).
At time point T1, decoding unit 11 renvois can (de-assert) reset signal SRE closing transistor T 21, decoding unit 11 also renvoi can control signal SC to close transistor T 20.PEXP between exposure period, optical diode PD light sensing and according to the light intensity of institute's sensing in its negative electrode stored charge.Voltage on the negative electrode of optical diode PD then is called sensing signal SS.
In one embodiment, if when requiring pixel 2 as memory cell, operation below will carrying out.PEXP between exposure period, conductings among a plurality of switch 14a～14c of decoding circuit 12 control commutation circuits 14, for example switch 14b conducting, and corresponding voltage AVDD * 3/4 input that is provided to transistor T 21 is with as input signal.Simultaneously, decoding circuit 12 activation reset signal SRE are with turn-on transistor T21.Transistor T 21 is sent to its output (diffusion node FN promptly floats) with this input signal, is stored in the diffusion node FN that floats with the voltage with input signal.Therefore, pixel 2 as memory cell to store said input signal.In addition, the transistor T 22 of source follower 21c is according to the voltage of input signal (i.e. voltage on the diffusion node FN that floats) and conducting or close.By this, access output signal results from output node NR according to the turned on or off of transistor T 22, with as read output signal SR.Note, reading period P
REDBefore, reading circuit 13 must read the read output signal SR on the node NR that reads from sampling unit 21, and handles said read output signal SR.
The person of connecing will be described in and read period P
REDOperation.At time point T2, decoding unit 11 once more activation reset signal SRE with turn-on transistor T21, and transistor T 21 once more voltage ACDD * 1/4 that receives to be sent to float the to reset position of diffusion node FN of its output accurate.Then, decoding unit 11 on time point T2a renvoi can reset signal SRE to close transistor T 21.At time point T2b, decoding unit 11 activation control signal SC are with turn-on transistor T20.Therefore, transistor T 20 will result from the exposure period P
EXPSensing signal SS be transferred to the diffusion node FN that floats.In other words, sensing signal SS is taken a sample by sampling unit 21.The voltage of sensing signal SS is stored in the diffusion node FN that floats.At time point T2c, SC is to close transistor T 20 for decoding unit 11 renvois ability control signal.The transistor T 22 of source follower 21c is according to the voltage of sensing signal SS (voltage on the diffusion node FN that promptly floats) and conducting or close.By this, sensing output signal results from according to the turned on or off of transistor T 22 and reads node NR, and with as read output signal SR, the read output signal SR of this moment representes the light intensity that optical diode PD is sensed.At time point T2d, reading circuit 13 reads/takes a sample the read output signal SR on the node NR that reads from sampling unit 21, and handles said read output signal SR.
According to the foregoing description, pixel 2 can be used as the sensing born of the same parents with light sensing, perhaps as memory cell to store input signal, wherein, the required data of said input signal indication sense operation, for example reference information or control information.In the exposure period P
EXP, because transistor T 20 closes, therefore float diffusion node FN not or the sensing signal SS that receives on the node N20 influence.Therefore, in the exposure period P
EXP, pixel 2 is done storage to transmit above-mentioned input signal to the diffusion node FN that floats as memory cell, and pixel 2 also comes output access output signal with as read output signal SR according to said input signal.1 less line buffer of needs of sensing apparatus reduces the cost of sensing apparatus 1 by this and reduces its area.
As shown in Figure 2, the source follower 21c of each pixel comprises transistor T 22.In certain embodiments, the source follower 21c that is configured in a plurality of pixels of same lines shares a current source, and said current source is coupled to reading separately between node NR and the ground connection of the said pixel that is configured in same lines.
In the embodiments of figure 3, reading period P
RED, reading circuit 14 reads once the read output signal SR on the node NR that reads from sampling unit 21c.Promptly be that sensing element 14 is at the read output signal SR on the node NR that reads that reads on the time point T2d from sampling unit 21c.Yet in other embodiments, (correction double sampling, CDS) operation can read period P in the correlated double sampling
REDThe interior execution.In the case; Reading circuit 14 is reading on the time point between time point T2a and the T2b or is taking a sample from the read output signal SR on the node NR that reads of sampling unit 21c; Obtained read-out voltage, reading circuit 14 is taken a sample read output signal SR to obtain another read-out voltage on time point T2d then.Then, reading circuit 14 calculates poor between these two read-out voltages, and said voltage difference is then represented the light intensity by optical diode PD institute sensing.
Though the present invention discloses as above with preferred embodiment; So it is not in order to limit scope of the present invention; Any those skilled in the art; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the accompanying Claim person of defining.
Claims (15)
1. sensor pixel array comprises:
A plurality of pixels are configured in the array, and wherein, read output signal is operated and produced to each said pixel between exposure period and between reading duration, and each said pixel comprises:
Sensing cell, in order to light sensing between said exposure period to produce sensing signal; And
Sampling unit is used as said read output signal in order to the said sensing signal of sampling between said reading duration to produce sensing output signal;
Wherein, between said exposure period in, said sampling unit is as memory cell, is used as said read output signal to store input signal and output access output signal.
2. sensor pixel array as claimed in claim 1, wherein, said sampling unit comprises:
Transfer element couples said sensing cell, between said reading duration, said sensing signal is transferred to unsteady diffusion node;
Reset cell couples said unsteady diffusion node, and is accurate in order to the position of the said unsteady diffusion node of between said exposure period, resetting before; And
Source follower couples said unsteady diffusion node, in order to produce said sensing output signal with as said read output signal according to the voltage of said sensing signal between said reading duration;
Wherein, between said exposure period in, said transfer element is not transferred to said unsteady diffusion node with said sensing signal, and said reset cell transmits said input signal to said unsteady diffusion node.
3. sensor pixel array as claimed in claim 2, wherein, between said exposure period in, said source follower produces said access output signal according to the voltage of said input signal, with as said read output signal.
4. sensor pixel array as claimed in claim 2, wherein, said reset cell comprises:
Transistor has input that couples a plurality of voltage sources and the output that couples said unsteady diffusion node;
Wherein, before between said exposure period, said input receives from one voltage in said a plurality of voltage sources, and the voltage of said reception to be sent to said output accurate with the position of the said unsteady diffusion node of resetting; And
Wherein, between said exposure period in, said input receives from one voltage in said a plurality of voltage sources with as said input signal, and said input signal is transferred into said output.
5. sensor pixel array as claimed in claim 2, wherein, said sampling unit also comprises storage unit, couples said unsteady diffusion node.
6. sensor pixel array as claimed in claim 5, wherein, said storage unit is the essence capacitor or the parasitic capacitance of said source follower.
7. sensor pixel array as claimed in claim 1, wherein, said sensing cell comprises optical diode, in order to light sensing between said exposure period to produce said sensing signal.
8. sensing apparatus comprises:
A plurality of pixels are configured in the array, and wherein, read output signal is operated and produced to each said pixel between exposure period and between reading duration, and each said pixel comprises:
Sensing cell, in order to light sensing between said exposure period to produce sensing signal; And
Sampling unit is used as said read output signal in order to the said sensing signal of sampling between said reading duration to produce sensing output signal;
Wherein, between said exposure period in, said sampling unit is as memory cell, is used as said read output signal to store input signal and output access output signal;
First decoding circuit, in order to the said sampling unit of control between said reading duration, the said sensing signal and produce said sensing output signal so that said sampling unit is taken a sample; And
Second decoding circuit is controlled said sampling unit between said exposure period, so that said sampling unit stores said input signal and exports said access output signal.
9. sensing apparatus as claimed in claim 8 also comprises reading circuit, in order to read out from the said read output signal of said sampling unit and to handle said read output signal.
10. sensing apparatus as claimed in claim 8, wherein, said sampling unit comprises:
Transfer element couples said sensing cell, and is controlled by said first decoding circuit between said reading duration so that said sensing signal is transferred to unsteady diffusion node;
Reset cell couples said transfer element in said unsteady diffusion node, and it is accurate with the position of the said unsteady diffusion node of resetting to be controlled by said first decoding circuit before between said exposure period; And
Source follower couples said unsteady diffusion node, in order to produce said sensing output signal with as said read output signal according to the voltage of said sensing signal between said reading duration;
Wherein, In between said exposure period; Said first decoding circuit is controlled said transfer element and said sensing signal is not transferred to said unsteady diffusion node, and said second decoding circuit is controlled said reset cell and transmitted said input signal to said unsteady diffusion node.
11. sensing apparatus as claimed in claim 10, wherein, between said exposure period in, said source follower produces said access output signal according to the voltage of said input signal, with as said read output signal.
12. sensing apparatus as claimed in claim 10, wherein, said reset cell comprises:
Transistor has the control end that receives reset signal, couples the input of a plurality of voltage sources, and the output that couples said unsteady diffusion node;
Wherein, Before between said exposure period; Said input receives from one voltage in said a plurality of voltage sources; And the said reset signal of the said first decoding circuit activation is sent to said output to control said transistor with the voltage of said reception, and is accurate with the position of the said unsteady diffusion node of resetting; And
Wherein, In between said exposure period; Said input receives from one voltage in said a plurality of voltage sources with as said input signal, and the said reset signal of the said second decoding circuit activation is sent to said output to control said transistor with said input signal.
13. sensing apparatus as claimed in claim 10, wherein, said sampling unit also comprises storage unit, couples said unsteady diffusion node.
14. sensing apparatus as claimed in claim 13, wherein, said storage unit is the essence capacitor or the parasitic capacitance of said source follower.
15. sensing apparatus as claimed in claim 8, wherein, said sensing cell comprises optical diode, in order to light sensing between said exposure period to produce said sensing signal.
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| CN111246129A (en) * | 2019-05-03 | 2020-06-05 | 神盾股份有限公司 | Optical sensor and image sensing method |
| CN113810634A (en) * | 2020-06-12 | 2021-12-17 | 联詠科技股份有限公司 | Image sensing device and operation method thereof |
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Application publication date: 20120606 |