CN102486696A - Touch pad sensor - Google Patents
Touch pad sensor Download PDFInfo
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- CN102486696A CN102486696A CN2011100328258A CN201110032825A CN102486696A CN 102486696 A CN102486696 A CN 102486696A CN 2011100328258 A CN2011100328258 A CN 2011100328258A CN 201110032825 A CN201110032825 A CN 201110032825A CN 102486696 A CN102486696 A CN 102486696A
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Abstract
The invention provides a touch pad sensor having advantages of good durability of load pressed from the vertical pressing, difficulty in breaking lines, ability of improving the resistance, and high reliability. The touch pad sensor is provided with a transparent conductive film and the wiring connected with the transparent conductive film. The wiring can be started from the substrate side, and is constituted by a metal film with a high melting point, A1 alloy membrane, and a metal film with a high melting point. The A1 alloy membrane contains a 0.05-1atom% rare-earth element having the hardness of 2-3.5GPa. The density of the grain boundary triple point existing in the A1 alloy organization is more than 2*108 per mm2.
Description
Technical field
The present invention relates to have the touchpad sensor of nesa coating and connected wiring.
Background technology
Be configured in the front surface of image display device; As the touchpad sensor that uses with the incorporate input switch of image display device; Because easy to use, and in extensive fields such as the operation screen use of ATM and ticket machine, navigator, PDA, the duplicating machine of bank.The detection mode of its input point can give an example out resistive film mode, static capacity mode, optical profile type, ultrasonic surface elastic wave mode, piezoelectric type etc.Wherein, the resistive film mode is because reason such as simple in structure with low cost and being widely used the most.
The touchpad sensor of resistive film mode mainly is made up of upper electrode, lower electrode and rear portion; The substrate (for example film substrate) that constitutes upper electrode is gone up the nesa coating that is provided with and the substrate (for example glass substrate) that constitutes lower electrode and is gone up the nesa coating that is provided with and constitute relatively across spacer.Above-mentioned pellicular front in the touchpad sensor of this formation is when waiting touch by finger with pen; Above-mentioned two nesa coatings contact; Electrode current through the two ends of nesa coating flows, and the intrinsic standoff ratio through the resistance of measuring above-mentioned nesa coating separately produces detects the position that is touched.
In the technology of making above-mentioned touchpad sensor; The wiring of the drawing wiring that is used to connect nesa coating and control circuit and the metal line that is connected nesa coating etc., the conductive paste through ink-jet method or other printing process printing silver paste etc. and electric conductivity is black forms usually.But the wiring that is made up of fine silver or silver alloy and the connecting airtight property of glass or resin etc. are poor, in addition, with the coupling part of external device (ED) in, aggegation on substrate causes resistance to increase and the bad problem of short-term etc. thereby exist.
In addition, touchpad sensor is the sensor of pushing of perception people's finger etc., and the stress that is applied during according to contact has microdeformation for the moment.Because the repeated use of contact plate, this microdeformation produces repeatedly, to the stress application repeatedly that connects up also.Thus, above-mentioned wiring is particularly required permanance (patience of counter stress).But, use to constitute wiring that conductive paste forms by fine silver or silver alloy and be difficult to say that to state permanance be fully, wiring damages easily in the use of touch pad.During the wiring damage, it is big that the resistance of this wiring becomes, and voltage descends and takes place, and the precision of the position probing of touchpad sensor descends easily.In addition, when adopting the style of writing mode, need the thin spaceization of above-mentioned wiring, but form through rubbing method when using cream, therefore, be difficult to thin spaceization.
In addition, consider that also the fully low pure Al of resistivity is applicable to wiring material.But, when wiring material uses pure Al, forming the aluminium oxide of insulativity between the nesa coating of touchpad sensor and the pure Al film, generation can not be guaranteed the problem of electric conductivity.Therefore; For electric conductivity is guaranteed in the oxidation that prevents pure Al; Proposed following method: the barrier layer that will be made up of the refractory metal of Mo, Ti etc. is located between nesa coating and the pure Al film and uses as basalis, or contains the Al-Nd alloy of the Nd of excellences such as thermotolerance as the alternative use of pure Al.In addition; Even disclosing directly to be connected with nesa coating, the applicant also shows low resistance in patent documentation 1; And, as through the time the Al film that resistance increases and short-term is difficult to take place, contain the Ni of ormal weight and/or the Al-Ni/Co alloy film of Co (wiring material of individual layer).
Patent documentation 1 spy opens the 2009-245422 communique
Summary of the invention
The object of the present invention is to provide particularly with respect to the excellent in te pins of durability longitudinally that is pressed into loading etc., be difficult to break or through the time resistance increase the touchpad sensor that reliability is high.
The touchpad sensor of the present invention that solves above-mentioned problem has nesa coating and the wiring that is connected with said nesa coating; Wherein, said wiring is made up of high melting point metal film, Al alloy film and high melting point metal film with the order from substrate-side; Said Al alloy film contains the REE of 0.05～1 atom %; And hardness is 2～3.5GPa, and the density of the crystal boundary triple point that in the Al alloy structure, exists is 2 * 10
8Individual/mm
2More than.
In preferred implementation of the present invention, said REE is more than one the element of from the crowd that Nd, Gd, La, Y, Ce, Pr and Dy constitute, selecting.
In preferred implementation of the present invention, said nesa coating is made up of tin indium oxide (ITO) or indium zinc oxide (IZO).
According to the present invention, touchpad sensor with wiring, uses the upper and lower wiring material that disposes high melting point metal film at the Al alloy film that contains REE as touchpad sensor; Wherein, Suitably control the hardness and the crystal boundary triple point density of above-mentioned Al alloy film, therefore, can provide particularly with respect to the excellent in te pins of durability longitudinally that is pressed into loading etc.; Be difficult to break or through the time resistance increase the touchpad sensor that reliability is high.The present invention is effective to various touch pads, for example go for bank etc. financial institution ATM, station and restaurant etc. automatic vending machine etc. push the contact touchpad sensor that the part represented in the picture is operated.
Embodiment
Present inventors are in order to provide following wiring material; And study: in touchpad sensor, use the widely used wiring material of wiring as touchpad sensor; Have contain the Al alloy film of REE (below; Sometimes be designated as Al-rare earth element alloy film or abbreviate the Al alloy film as) the wiring material of high melting point metal films such as the upper and lower range upon range of Mo of having, have particularly with respect to because the suitable patience of being out of shape longitudinally of pushing the loading generation that is applied during contacts such as people's finger or pen, can prevent short-term and peel off; In addition, can also prevent along with above-mentioned product look be sorry through the time resistance increase.Find as its result,, use Al alloy film, can realize desired purpose, thereby accomplish the present invention with regulation hardness and crystal boundary density as above-mentioned Al-rare earth element alloy film.
That is, characteristic of the present invention be conduct with the shared wiring of high melting point metal film with Al-rare earth alloy film, employing hardness is 2～3.5GPa, and the density of the crystal boundary triple point that in the Al alloy structure, exists is 2 * 10
8Individual/mm
2Above Al alloy film.
First-selection, the hardness that makes Al-rare earth alloy film is 2～3.5GPa.Deformation energy (tracing ability) excellence of (during use) when requiring to touch for touch pad; Particularly give the loading of transition by pen or the powerful contact of finger picture; Stress is concentrated for the moment in sensor end; Even wiring distortion or deterioration, also possess the short-term that do not take place to connect up, disrumpent feelings, peel off etc. degree with respect to permanance longitudinally.Above-mentioned hardness is set from this viewpoint, also consider and be configured in the Al alloy film high melting point metal film up and down hardness balance and set.
At length say, cross when soft at the wiring material that constitutes wiring because the distortion of stress concentric wiring repeatedly, the wiring deterioration, disrumpent feelings with generation such as peel off, problems such as increase have a resistance.And wiring material is when really up to the mark, and with respect to pushing loading, distortion is difficult to take place, and therefore, small crackle gets into, the deterioration of perhaps peeling off etc.In addition; When using the sandwich of Al alloy film and high melting point metal film as wiring material like the present invention; When setting the hardness of Al alloy film, need consider also and the balance of the hardness of high melting point metal film that the upper limit of the hardness of Al alloy film may be controlled to and constitute the hardness of the roughly the same degree of refractory metal of high melting point metal film; And the lower limit of the hardness of Al alloy film, it is big poor not produce for the hardness with refractory metal.Based on this viewpoint, the hardness with the Al alloy film among the present invention is decided to be below the above 3.5GPa of 2GPa.Be preferably below the above 3.3GPa of 2.5GPa.Also have, the hardness of Al alloy film be through after the value measured of the method put down in writing among the embodiment that states.
In addition, to satisfy the density (below, abbreviate triple point density as) of the crystal boundary triple point that in the Al alloy structure, exists be 2 * 10 to Al alloy film used in the present invention
8Individual/mm
2More than.Among above-mentioned the present invention; Need be in specialized range, but hardness has substantial connection with triple point density usually with the Hardness Control of Al alloy film, the content of REE is within the scope of the invention when (1 atom % is following); Have triple point density and become big more, the tendency that hardness is also big more.In the present invention, the viewpoint from the lower limit (2GPa) of the hardness of guaranteeing the Al alloy film is decided to be 2 * 10 with triple point density
8Individual/mm
2More than.Be preferably 2.4 * 10
8Individual/mm
2More than.The upper limit of triple point density is considered the efficiency of spatter film forming etc., is preferably 8.0 * 10
8Individual/mm
2Also have, the triple point density of Al alloy film be through after the value measured of the method that embodiment put down in writing stated.
More than, the hardness and the triple point density of the Al alloy film of the tool characteristic of the present invention is illustrated.
The used Al alloy film of the present invention has the REE of 0.05～1 atom %, and surplus is Al and unavoidable impurities.In the present invention; The composition of employed Al alloy film is not a characteristic; The Al alloy film that contains REE has thermotolerance, and is known as the wiring material use, still; Particularly from the viewpoint of the material that touchpad sensor was suitable for that contact is provided, the controlled Al alloy film of hardness and triple point density is also unexposed so far.The upper and lower bound of ree content is to determine in order to ensure the scope of the hardness of the present invention's regulation and triple point density; As after the embodiment that states said; Along with ree content reduces; Hardness has the tendency of decline, and the content of REE is lower than following the prescribing a time limit that the present invention limits, and at least one of hardness or triple point density is outside scope of the present invention.In addition, along with ree content becomes many, hardness also has the tendency of increase, and the content of REE surpasses going up in limited time of the present invention's qualification, and at least one of hardness and triple point density is outside the scope of the invention.
As the used REE of the present invention, can give an example out lanthanide series (in the periodic table of elements, total 15 elements) from the La of atom numbering 57 to the Lu position of atom numbering 71, add the groups of elements of Sc (scandium) and Y (yttrium).In the present invention, these elements can be separately or and with use more than 2 kinds, the content of above-mentioned REE is independent amount containing separately sometimes, containing when two or more, is its total amount.Preferred REE is more than one the element of from Nd, Gd, La, Y, Ce, Pr and Dy, selecting.
In the present invention, use the material that high melting point metal film is arranged in the stacked on top of one another of above-mentioned Al alloy film as wiring material.As stated, high melting point metal film is because the oxidation of weaving Al, thereby widely uses as the basalis of Al alloy film etc., can use Mo, Ti, Cr, W or their alloy in the present invention.Be configured in the composition of the high melting point metal film up and down of Al alloy film, up and down respectively can be identical, also can be different.
The preferred thickness of above-mentioned Al alloy film is 150～600nm roughly, and the preferred thickness of high melting point metal film is 30～100nm roughly.
In the present invention,, contain in use outside the Al alloy film of REE of regulation, preferably in the scope of room temperature～230 ℃, the Al alloy film after the film forming is heat-treated (annealing) in order suitably to be controlled the Al alloy film of hardness and triple point density.In the manufacturing process of touch pad, usually the thermal process of room temperature～about 250 ℃ is many, but annealing temperature grows up because REE is separated out with the power grain of Al alloy when uprising, therefore, and hardness and triple point density step-down.Specifically, can set suitable annealing temperature according to the addition of REE, more preferably 150～230 ℃.
In addition, in the present invention, from realizing the homogenising of the alloying component in graph thinning and the film, the viewpoint of easy control interpolation amount of element etc. is set out, and preferably forms the Al alloy film through sputtering method.In sputtering method, the one-tenth mould temperature during preferably with sputter roughly is controlled to be below 180 ℃, and Ar air pressure roughly is controlled to be below the 3mTorr.Substrate temperature and film-forming temperature are high more, and formed film membranous more near main body forms fine and close film easilier, and the hardness of film has the tendency of increase.The adjustment of this membrance casting condition, loose from a membrane structure, the viewpoint that corrosion takes place is set out to preferably.
Have the range upon range of wiring that constitutes by Al alloy film that is connected with nesa coating and high melting point metal film in the present invention, the formation beyond it is not particularly limited, and can be employed in normally used known formation in the touchpad sensor field.
For example, the touchpad sensor of resistive film mode can be made as follows.Promptly; After forming nesa coating on the substrate, after order was carried out resist-coated, exposure, development, etching, order formed high melting point metal film, Al alloy film, high melting point metal film; Implement resist-coated, exposure, development, etching formation wiring; Then, form the dielectric film of this wiring of lining etc., form upper electrode.In addition; After forming nesa coating on the substrate, carry out photoetch equally with upper electrode, then; Same with the situation of upper electrode; After the wiring that formation is made up of high melting point metal film, Al alloy film, high melting point metal film, form the dielectric film of this wiring of lining, form little some spacer (マ イ Network ロ De Star ト ス ペ one サ) etc. as lower electrode.And touchpad sensor is made at the above-mentioned upper electrode of fitting, lower electrode and the rear portion that forms in addition.
Above-mentioned nesa coating does not limit especially, can use the material of tin indium oxide (ITO) or indium zinc oxide (IZO) formation as typical example.In addition; Aforesaid substrate (transparency carrier) can use for example glass, polycarbonate-based or polyamine system as normally used substrate; For example, use glass, require the substrate of flexual upper electrode to use the film of polycarbonate-based grade as the lower electrode of fixed electorde.
In addition, touchpad sensor of the present invention can also use as the touchpad sensor of static capacity mode and ultrasonic surface elastic wave mode etc. beyond above-mentioned resistive film mode.
(embodiment)
Below, through embodiment the present invention is described more specifically.But the present invention is not limited by following embodiment, in the scope of aim up and down, can change enforcement, and these all are contained in technical scope of the present invention.
Embodiment 1
With alkali-free glass plate (4 inches of thickness of slab 0.7mm, diameters) as substrate; Form the kind Al alloy film (thickness be about 500nm) different of REE as shown in table 1 below with content (unit is atom %, surplus: Al and unavoidable impurities) through DC magnetic sputtering method on its surface.Before film forming, make the atmosphere in the chamber reach vacuum tightness earlier: 3 * 10
-6Torr, the disc target that the diameter that use and each Al alloy film identical component are formed is 4 inches carries out film forming with following condition.Then, for the Al alloy after the film forming, in blanket of nitrogen, under the various annealing temperatures of table 1 record, carry out thermal treatment in 30 minutes.In the table 1, not heating (being room temperature) of "-" expression.Also have, the composition of the Al alloy film of formation is confirmed through inducing binding plasma (Inductively Coupled Plasma:ICP) mass analysis.
(sputtering condition)
Ar air pressure: 2mTorr
Ar gas flow: 30sccm
Sputtering power: 260W
Become the mould temperature: room temperature ℃
Use the Al alloy film as above obtain, the hardness test of the film that carries out carrying out through the nanometer vranding iron.In this test, use the Nano Indenter XP (analyze and use software: TestWorks 4) of MTS society system, use the XP sheet, carry out continuous rigidity and measure.According to pressing depth be 300nm, excited vibrational frequency: 45Hz, amplitude: 2nm with this understanding, measures 15 points, tries to achieve mean value.
In addition, the Al alloy film that as above obtains is carried out tem observation, be determined at the density (triple point density) of measuring Al alloy observed in the visual field (visual field is 1.2 μ m * 1.6 μ m), that exist at the crystal boundary triple point with 150,000 times of multiplying powers.Mensuration is carried out to add up to 3 visuals field, and its mean value is as the triple point density of Al alloy.
For replacing test portion and above-mentioned same mensuration hardness and the triple point density that the Al alloy film forms pure Al film.
These results are documented in the table 1." E+07 " is 10 in the table 1
7The meaning.For example, the No.1 of table 1 " 9.0E+07 " is 9.0 * 10
7The meaning.
Table 1
In the table 1, No.5～18 and 37～39 all are the examples that contain the Al alloy film of Nd as REE.When annealing temperature is identical; The tendency (for example, being the situation of room temperature (-), No.5,9,13,37) that increase is arranged along with the increase hardness and the triple point density of Nd amount with reference to annealing temperature; For hardness and triple point density are controlled in the specialized range, make Nd amount on to be limited to 1 atom % effective.In addition; Even Nd amount is identical, if annealing temperature is higher than preferable range of the present invention, then hardness and triple point density have the tendency that reduces (for example; It with reference to annealing temperature 250 ℃ situation; No.8,12,17,18), for hardness and triple point density are controlled in the specialized range, the upper limit of annealing temperature is controlled to be 230 ℃ effectively.
In the table 1, No.19～36 are to use the example of the Al alloy film that contains the REE beyond the Nd, all are the content that contains the REE of the present invention's qualification; And; Annealing temperature also is controlled to be made in the preferable range of the present invention, and therefore, hardness and triple point density are controlled in 1 the scope.In addition, during through the above-mentioned REE of experimental verification beyond using Nd, also obtain the test findings identical with above-mentioned Nd.
According to these results, if use Al-rare earth element alloy film of the present invention, then with respect to excellent in te pins of durability longitudinally, be difficult to break and through the time resistance increase, can provide reliability high touchpad sensor.
To this, the example of the pure Al of REE is not contained in No.1～4th, in any case annealing temperature control all can not obtain hardness and triple point density that the present invention limits.
Claims (3)
1. touchpad sensor, it has nesa coating and the wiring that is connected with said nesa coating, it is characterized in that,
The order of said wiring to begin from substrate-side is made up of high melting point metal film, Al alloy film and high melting point metal film,
Said Al alloy film contains the REE of 0.05～1 atom %, and hardness is 2～3.5GPa, and the density of the crystal boundary triple point that in the Al alloy structure, exists is 2 * 10
8Individual/mm
2More than.
2. touchpad sensor according to claim 1 is characterized in that, said REE is more than one the element of from the crowd that Nd, Gd, La, Y, Ce, Pr and Dy constitute, selecting.
3. touchpad sensor according to claim 1 and 2 is characterized in that, said nesa coating is made up of tin indium oxide ITO or indium zinc oxide IZO.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-268687 | 2010-12-01 | ||
| JP2010268687A JP5416681B2 (en) | 2010-12-01 | 2010-12-01 | Touch panel sensor and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102486696A true CN102486696A (en) | 2012-06-06 |
| CN102486696B CN102486696B (en) | 2015-04-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110032825.8A Active CN102486696B (en) | 2010-12-01 | 2011-01-26 | Touch pad sensor |
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| JP (1) | JP5416681B2 (en) |
| CN (1) | CN102486696B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201107767Y (en) * | 2007-11-27 | 2008-08-27 | 胜华科技股份有限公司 | Structure of capacitance type touching control panel joint zone |
| WO2008108042A1 (en) * | 2007-03-01 | 2008-09-12 | Sharp Kabushiki Kaisha | Display panel substrate, display panel, display device and method for manufacturing display panel substrate |
| JP2009245422A (en) * | 2008-02-22 | 2009-10-22 | Kobe Steel Ltd | Touch panel sensor |
| JP2010198608A (en) * | 2009-01-28 | 2010-09-09 | Semiconductor Energy Lab Co Ltd | Display device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3940385B2 (en) * | 2002-12-19 | 2007-07-04 | 株式会社神戸製鋼所 | Display device and manufacturing method thereof |
| JP2007018226A (en) * | 2005-07-07 | 2007-01-25 | Three M Innovative Properties Co | Touch panel sensor |
| JP4605788B2 (en) * | 2006-04-27 | 2011-01-05 | 日東電工株式会社 | Touch panel |
| JP5139134B2 (en) * | 2008-03-31 | 2013-02-06 | 株式会社コベルコ科研 | Al-Ni-La-Cu-based Al-based alloy sputtering target and method for producing the same |
| JP5432550B2 (en) * | 2008-03-31 | 2014-03-05 | 株式会社コベルコ科研 | Al-based alloy sputtering target and manufacturing method thereof |
| JP5084698B2 (en) * | 2008-10-29 | 2012-11-28 | 京セラ株式会社 | Touch panel and touch panel display device |
-
2010
- 2010-12-01 JP JP2010268687A patent/JP5416681B2/en active Active
-
2011
- 2011-01-26 CN CN201110032825.8A patent/CN102486696B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008108042A1 (en) * | 2007-03-01 | 2008-09-12 | Sharp Kabushiki Kaisha | Display panel substrate, display panel, display device and method for manufacturing display panel substrate |
| CN201107767Y (en) * | 2007-11-27 | 2008-08-27 | 胜华科技股份有限公司 | Structure of capacitance type touching control panel joint zone |
| JP2009245422A (en) * | 2008-02-22 | 2009-10-22 | Kobe Steel Ltd | Touch panel sensor |
| JP2010198608A (en) * | 2009-01-28 | 2010-09-09 | Semiconductor Energy Lab Co Ltd | Display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102486696B (en) | 2015-04-29 |
| JP5416681B2 (en) | 2014-02-12 |
| JP2012118813A (en) | 2012-06-21 |
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