CN102479727A - Semiconductor apparatus and method for making the same - Google Patents
Semiconductor apparatus and method for making the same Download PDFInfo
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- CN102479727A CN102479727A CN201110387945XA CN201110387945A CN102479727A CN 102479727 A CN102479727 A CN 102479727A CN 201110387945X A CN201110387945X A CN 201110387945XA CN 201110387945 A CN201110387945 A CN 201110387945A CN 102479727 A CN102479727 A CN 102479727A
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- bed die
- mold
- semiconductor device
- insulating resin
- resin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention provides a method for producing semiconductors that utilizes a mould with no need for press pins to further improve the heat dissipation of a semiconductor as well as a semiconductor. The method is characterized by comprising the step of preparing an assembling midbody, where the assembling midbody is provided with a power element upon the surface of a metal plate having a lead terminal and an insulating resin layer; and the insulating resin layer is fixedly installed between the other surface of the metal plate and the upper surface of the metal layer and has the characteristic of thermal expansion while being heated. The method further comprises the steps of: configuring the lower surface of the metal layer of the assembling midboy opposite to the bottom surface of the dent of the lower mould in the resin packaging mould; forming a mould resin filling space via the dents of the lower mould and the upper mould; heating the insulating resin layer to thicken the insulating resin layer, thereby pressing the metal layer toward the dent of the lower mould; and filling the mould resin into the mould resin filling space.
Description
Technical field
The present invention relates to the manufacturing approach and the semiconductor device of semiconductor device, particularly carried the manufacturing approach and the semiconductor device of the semiconductor device with high radiator structure of power component.
Background technology
No matter be that household electrical appliances are used product with product or industry, in the drive controlling of the motor on the drum that is assembled into the compressor of air conditioner, washing machine, pump etc., used the high pressure three phase electric machine to drive and used semiconductor device.In addition, in the motor-driven control of hybrid vehicle, electric automobile etc., also use.This semiconductor device has high-pressure side (H-side) drive circuit and low-pressure side (L-side) drive circuit as 1 group of circuit, integrated, the i.e. structure of 3 circuit corresponding with three-phase.High-pressure side driving circuit has the high side switch element and the driving thereof that are inserted between supply voltage and the motor side output and uses integrated circuit.The low-pressure side drive circuit has the low-side switch element and the driving thereof that are inserted between motor side output and the reference power supply and uses integrated circuit.Generally speaking, both sides' driving with integrated circuit as a semiconductor chip and being integrated.As a result, in semiconductor device, have to amount to 6 switch elements and amount to 3 drivings and use integrated circuit.For the switch element of on high-tension side switch element, low-pressure side, use the transistor of identical polar respectively, both sides' transistor electrically is connected in series and constitutes half-bridge circuit.In addition, metal heating panel is installed in the resin-encapsulated body.Aforesaid semiconductor device is also referred to as SPM (IPM).
In recent years, there is the problem that requires Towards Higher Voltage, requires high-cooling property in this semiconductor device.Shown in following patent documentation 1, as the semiconductor device with high radiator structure, its structure has: power component, and its bonding agent through scolder etc. is arranged on the lower bolster of framework; Lead terminal, the one of which end is arranged on the framework; Metal forming, it is arranged on the lower surface of framework through resin sheet; And the mold resin, it covers the part except at least a portion of the other end at least of lead terminal and metal level lower surface.
As one of this countermeasure, following described semiconductor device arranged as prior art is known: possess by pad in resin-encapsulated, lower bolster is fixed on mold inside carries out resin forming (for example, with reference to patent documentation 1, Fig. 4) with mould.Thus, can be well fixedly lower bolster and the resin sheet that is bonded on metal forming.
[patent documentation 1] TOHKEMY 2005-123495 communique
Power model is further required under hot environment, to use.At this moment,, need to strengthen the degree of connecting airtight of internal structure thing and heating panel, the heating panel surface is exposed owing to emit the heat that in semiconductor device, produces expeditiously.
But, there is the problem that is described below in the prior art, promptly because needs pressed pad, so resin encapsulation modle becomes complicated.In addition, also there is the problem of wanting to improve thermal diffusivity.
Summary of the invention
Therefore, the present invention proposes in order to address the above problem, and its purpose is, provides a kind of can the use further to improve the manufacturing approach and the semiconductor device of the semiconductor device of thermal diffusivity by the mould of pad.
In order to address the above problem, the present invention has the structure that is described below.The manufacturing approach of semiconductor device of the present invention; It is characterized in that; This method comprises the steps: to prepare the assembling intermediate; This assembling intermediate is uploaded at a face of the metallic plate with lead terminal and is put power component, and has insulating resin layer, and this insulating resin layer is fixedly mounted between the upper surface of another face and metal level of metallic plate and has the characteristic of the thermal expansion through heating; With the lower surface of the metal level that will assemble intermediate, relatively be configured with the bottom surface of bed die recess in the resin encapsulation modle with bed die and mold; And in the mode of the upper surface configuration lead terminal of the bed die of bed die lead-in wire clamping part, at bed die recess arrangement assembling intermediate; Through bed die lead-in wire clamping part and mold lead-in wire clamping part clamping lead terminal, and through bed die recess and mold recess formation mold resin packing space; To the insulating resin layer heating, the thickness of insulating resin layer is increased, push metal level to the bottom surface of bed die recess; And the mold resin that is heated is filled in the mold resin packing space that forms through bed die and mold.In addition, it is characterized in that the lead terminal and the metallic plate of assembling intermediate are special-shaped bar lead frames.In addition, it is characterized in that insulating resin layer is the stepped construction of insulating resin and adhesive linkage.In addition, semiconductor device of the present invention is characterised in that this semiconductor device is to make through any one above-mentioned manufacturing approach.
The present invention plays the effect that is described below: owing to increase the thickness of insulating resin layer; Therefore provide and when pushing metal level, to carry out resin forming, the manufacturing approach and the semiconductor device of the semiconductor device that can be enough need not make by the mould of pad.In addition; Play the effect that is described below: owing to use metallic plate, and then metal laminate is attached to encapsulating mould, increase thermal diffusivity; Can suppress the generation of the resin burr of metal level, therefore a kind of manufacturing approach and semiconductor device that can improve the semiconductor device of thermal diffusivity can be provided.
Description of drawings
Fig. 1 is the manufacturing step profile of the semiconductor device of embodiments of the invention 1.
Fig. 2 is the profile of the semiconductor device of embodiments of the invention 1.
Fig. 3 is the profile of the semiconductor device of embodiments of the invention 2.
Fig. 4 is the profile of the semiconductor device of embodiments of the invention 3.
Symbol description
1: middle assembly; 2: lead terminal; 3: metallic plate; 4: power component; 5: insulating resin layer; 6: metal level; 7: special-shaped bar lead frame; 8: adhesive linkage; 9: insulating resin; 11,12,13: semiconductor device; 21: mold; 22: bed die; 23: the mold recess; 24: the bed die recess; 25: mold lead-in wire clamping part; 26: bed die lead-in wire clamping part; 27: resin encapsulation modle; 28: mold resin packing space; 29: the mold resin.
Embodiment
Below, specify execution mode of the present invention.In the record of following accompanying drawing,, represent with identical or similar symbol for identical or similar part.But accompanying drawing is the figure of signal, and the ratio of size relationship etc. is not to be real.Therefore, should judge concrete size etc. with reference to following explanation.In addition, even certainly between accompanying drawing, also comprise mutual size relationship or ratio different portions.
[embodiment 1]
Below, with reference to the manufacturing approach of the semiconductor device 11 of description of drawings embodiments of the invention 1.Fig. 1 is the manufacturing step profile of manufacturing step of the semiconductor device 1 of expression embodiments of the invention 1.(A) being the preparation process of middle assembly, (B) is the configuration step of middle assembly, (C) is to form the step of mold resin packing space and the step of pushing metal level to the bottom surface of bed die recess, (D) is the step that is filled into mold resin packing space.
At first, shown in Fig. 1 (A), the middle assembly 1 of form before the mold resin-encapsulated of the semiconductor device 11 that middle assembly preparation process is embodiment 1.
Middle assembly 1 is made up of lead terminal 2, metallic plate 3, power component 4, insulating resin layer 5 and metal level 6.
Lead terminal 2 uses as the electric input and output portion of semiconductor device.For example, utilize punch process or chemical etching processing, material is used copper or layer alloy more.In addition, be bonded on the circuit face of metallic plate 3 through scolder etc.
Metallic plate 3 is aluminium bases, on a face, on aluminium sheet, has implemented insulation processing, on insulating surfaces, has formed circuit pattern.Upload at this circuit pattern and to be equipped with lead terminal 2, power component 4.Perhaps metallic plate 3 also can use copper base.
Power component 4 is transistors of switch element etc., is bonded on the circuit face of metallic plate 3 through scolder etc.For example, engage manufacturing through die-bonding device.In addition, power component 4 passes through the bonding wire device and distribution with lead terminal 2, and electrically combines.
Insulating resin layer 5 is fixedly mounted between the face relative with the circuit pattern face and metal level 6 of metallic plate 3.In addition, use the insulating resin layer of characteristic with the thickness increase that makes insulating resin layer 5 to insulating resin layer 5 heating.For example, the material of insulating resin layer 5 is based on the high-expansion insulating adhesive of heating.This coefficient of linear expansion is preferably more than the 12ppm.
Metal level 6 is the heating panels with plate shape.A face of metal level 6 is fixedly mounted on the metallic plate 3 through insulating resin layer 5.In addition, another face becomes and exposes face after the resin-encapsulated through the mold resin.For example, material can be used copper or copper alloy.
Then, shown in Fig. 1 (B), middle assembly configuration step is the state that the middle assembly 1 of embodiment 1 is configured in resin forming mould 27.
Resin encapsulation modle 27 is metal partss, is made up of mold 21, bed die 22, mold recess 23, bed die recess 24, mold lead-in wire clamping part 25, bed die lead-in wire clamping part 26.
Mold 21 is the top of the paired part of resin encapsulation modle 27, mold recess 23 is processed have mold lead-in wire clamping part 25.
Bed die 22 is lower parts of the paired part of resin encapsulation modle 27, and bed die recess 24 is processed and had a bed die lead-in wire clamping part 26.
Mold recess 23 is the processing spaces that are dug into mold 21, is also referred to as the mold chamber.In this space, be filled with the mold resin, form the outer shape of semiconductor device.
Bed die recess 24 is the processing spaces that are dug into bed die 22, is also referred to as the bed die chamber.Assembly 1 in the middle of the configuration on this bed die recess 24.At this moment, make in the middle of another face of metal level 6 of assembly 1 touch the bottom surface of bed die recess 24.Same with mold recess 23, in this space, be filled with the mold resin, form the outer shape of semiconductor device.
Mold lead-in wire clamping part 25 is downsides of mold 21, is processed as the face of even shape.Push the upper surface of lead terminal 2 with this face.
Bed die lead-in wire clamping part 26 is upper sides of bed die 22, implements to be become the processing (omitting diagram) of dam block, the lead terminal 2 of assembly 1 in the middle of can disposing.
Then, shown in Fig. 1 (C), forming the step of mold resin packing space 28 and the step of pushing metal level towards the bottom surface of the recess of bed die, is the state before the potting resin on resin encapsulation modle 27 of embodiment 1.
Here, be that mold 21 descends, hold portion 25 and the bed die clamping part 26 that goes between with the mold cable guide and sandwiched the state of lead terminal 2.Form the mold resin packing space 28 of filling the mold resin through mold recess 23 and bed die recess 24.In addition, mold 21, bed die 22 heat through cartridge heater, and through lead terminal 2, metallic plate 4, the recess lower surface contact at bed die recess 24 has metal forming 6 in addition.By these, also transmit heat to insulating resin layer 5.For example, the temperature with mould is set at 190 ℃.
Thus, insulating resin layer 5 is heated, and thickness increases through thermal expansion, and upwards surface direction is pressed and attached metallic plate 3, and then metal level 6 is pressed the bottom surface of the bed die recess 24 that is attached to the lower surface direction.
Then, shown in Fig. 1 (D), being filled into the middle assembly configuration step of step of mold resin packing space, is the state of in the resin encapsulation modle 27 of embodiment 1, having filled mold resin 29.
Mold resin 29 becomes the resin-encapsulated body that forms semiconductor device.In the space that forms through mold recess 23 and bed die recess 24, fill the mold resin 29 that dissolves.For example, through transmitting die device, filling epoxy resin and moulding.
Afterwards, take out the product that has combined middle assembly 1 and mold resin 29 from resin encapsulation modle 27.Thus, the middle assembly of accomplishing with 29 pairs of embodiments of the invention 1 of mold resin 1 has carried out semiconductor device 11 resin-encapsulated, shown in Figure 2.
Manufacturing approach and the effect of semiconductor device 11 of the semiconductor device 11 of the above embodiments 1 then, are described.
As stated, the manufacturing approach of the semiconductor device 11 of embodiment 1, when resin forming, lead terminal 2 is by a pair of mold 21 and bed die 22 clampings, and the heating during through resin forming, utilizes thermal expansion to increase the thickness of insulating resin layer 5.And then, push metal level 6 to the bottom surface of bed die recess 24.Thus, in resin forming mould 27, need not press the latch structure that attaches parts, can make semiconductor device with the mould of simple structure.
In addition,, therefore improve thermal diffusivity, can improve thermal diffusivity owing to use metallic plate 3.And then; Be configured in stage of bed die recess 24 of bed die 22 at middle assembly 1; Even between the bottom surface of metal level 6 and bed die recess 24, have the gap, the bottom surface of metal level 6 is connected airtight in the bottom surface of bed die recess 24, after resin forming strongly; Be suppressed at the part generation resin burr that metal level 6 exposes, can improve thermal diffusivity.
[embodiment 2]
In addition,, replace metallic plate 3 and lead terminal 2 as embodiment 2, also can be as shown in Figure 3, use special-shaped bar lead frame 7.Because other manufacturing approach is identical with embodiment 1, therefore omit.
In embodiment 2, also can access the effect identical with embodiment 1.And then, because can integrally formed metallic plate and lead terminal, the joint operation that therefore can omit metallic plate and lead terminal.
Through above embodiment 1, embodiment 2, the manufacturing approach of semiconductor device of the present invention increases the thickness of insulating resin layer, therefore can when pushing metal level, carry out resin forming, can enoughly need not make by the mould of pad.In addition, owing to use metallic plate, and then metal laminate is attached to encapsulating mould, increase thermal diffusivity, can suppress the generation of the resin burr of metal level, therefore can improve thermal diffusivity.
As stated, though put down in writing execution mode of the present invention, should not be construed as, the description and the accompanying drawing that constitute this disclosed part limit this invention.Those skilled in the art should expect various replacement execution modes, embodiment and application technology from this is open.
For example, as shown in Figure 4 as embodiment 3, also can be in insulating resin 9 and the stepped construction of on a face of insulating resin 9 and another face, enclosing adhesive linkage 8.For example, the material of insulating resin 9 and adhesive linkage 8 is based on the high expanding material of heating.
In addition, the size of insulating resin layer 5, metal level 6 also can be identical with metallic plate 3.
In addition, the raw material of metal level 6 also can be aluminum or aluminum alloy.
In addition, also can make up embodiment 2 and embodiment 3.
Claims (4)
1. the manufacturing approach of a semiconductor device is characterized in that, this manufacturing approach comprises the steps:
Prepare the assembling intermediate; This assembling intermediate is uploaded at a face of the metallic plate with lead terminal and is put power component; And having an insulating resin layer, this insulating resin layer is fixedly mounted between the upper surface of another face and metal level of said metallic plate and has the characteristic of the thermal expansion through heating;
According to the said assembling intermediate of configuration in the bed die recess of following mode in resin encapsulation modle: the lower surface of the said metal level of said assembling intermediate relatively is configured with the bottom surface of said bed die recess, and disposes said lead terminal at the go between upper surface of clamping part of the bed die of said bed die with bed die and mold;
Through said bed die lead-in wire clamping part and the said lead terminal of said mold lead-in wire clamping part clamping, and through said bed die recess and said mold recess formation mold resin packing space;
Said insulating resin layer is heated, the thickness of said insulating resin layer is increased, push said metal level to the bottom surface of said bed die recess; And
The mold resin that is heated is filled in the said mold resin packing space that forms through said bed die and said mold.
2. the manufacturing approach of semiconductor device according to claim 1 is characterized in that,
The said lead terminal of said assembling intermediate and said metallic plate are special-shaped bar lead frames.
3. the manufacturing approach of semiconductor device according to claim 1 and 2 is characterized in that,
Said insulating resin layer is the stepped construction of insulating resin and adhesive linkage.
4. a semiconductor device is characterized in that, this semiconductor device is to make through any described manufacturing approach in claim 1 to the claim 3.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010267835A JP2012119488A (en) | 2010-11-30 | 2010-11-30 | Manufacturing method of semiconductor device and semiconductor device |
| JP2010-267835 | 2010-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102479727A true CN102479727A (en) | 2012-05-30 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120484317 Expired - Fee Related CN202332797U (en) | 2010-11-30 | 2011-11-29 | Semiconductor device |
| CN201110387945XA Pending CN102479727A (en) | 2010-11-30 | 2011-11-29 | Semiconductor apparatus and method for making the same |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120484317 Expired - Fee Related CN202332797U (en) | 2010-11-30 | 2011-11-29 | Semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2012119488A (en) |
| CN (2) | CN202332797U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111406316A (en) * | 2017-10-26 | 2020-07-10 | 新电元工业株式会社 | Electronic component |
| CN114166196A (en) * | 2020-09-11 | 2022-03-11 | 精工爱普生株式会社 | Method for manufacturing electronic device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1983574A (en) * | 2005-12-12 | 2007-06-20 | 三菱电机株式会社 | Semiconductor device and mold for resin-molding semiconductor device |
| CN101599484A (en) * | 2008-06-05 | 2009-12-09 | 三菱电机株式会社 | Resin molded semiconductor device and manufacture method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3932268B2 (en) * | 2002-06-17 | 2007-06-20 | 日東電工株式会社 | Resin sealing method using adhesive tape for masking |
| JP4737138B2 (en) * | 2007-05-14 | 2011-07-27 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
-
2010
- 2010-11-30 JP JP2010267835A patent/JP2012119488A/en active Pending
-
2011
- 2011-11-29 CN CN 201120484317 patent/CN202332797U/en not_active Expired - Fee Related
- 2011-11-29 CN CN201110387945XA patent/CN102479727A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1983574A (en) * | 2005-12-12 | 2007-06-20 | 三菱电机株式会社 | Semiconductor device and mold for resin-molding semiconductor device |
| CN101599484A (en) * | 2008-06-05 | 2009-12-09 | 三菱电机株式会社 | Resin molded semiconductor device and manufacture method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111406316A (en) * | 2017-10-26 | 2020-07-10 | 新电元工业株式会社 | Electronic component |
| CN111406316B (en) * | 2017-10-26 | 2023-08-01 | 新电元工业株式会社 | Electronic component |
| CN114166196A (en) * | 2020-09-11 | 2022-03-11 | 精工爱普生株式会社 | Method for manufacturing electronic device |
| CN114166196B (en) * | 2020-09-11 | 2024-01-09 | 精工爱普生株式会社 | Method for manufacturing electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN202332797U (en) | 2012-07-11 |
| JP2012119488A (en) | 2012-06-21 |
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Application publication date: 20120530 |