CN102478762B - Photoetching method - Google Patents
Photoetching method Download PDFInfo
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- CN102478762B CN102478762B CN201010557695.5A CN201010557695A CN102478762B CN 102478762 B CN102478762 B CN 102478762B CN 201010557695 A CN201010557695 A CN 201010557695A CN 102478762 B CN102478762 B CN 102478762B
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Abstract
The invention discloses a photoetching method. PR (photo resistance) is formed on the surface of a wafer, after the PR is exposed and developed to form a photoetching pattern, HMDS (hexamethyl disilazane) is sprayed on the surface of the crystal, then SEM (scanning electro microscope) is used for capturing the photoetching pattern, and the focus of the SEM is adjusted until the clear photoetching pattern appears in the visual field of an operator. The photoetching method can avoid contraction of the PR under actions of the SEM.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of photoetching method.
Background technology
Along with the development of semiconductor fabrication process, the area of semi-conductor chip is more and more less, so the precision of semiconductor technology also becomes more important.In semiconductor fabrication process, one of them important technique is exactly photoetching, and photoetching is by the design transfer on mask plate, to be the technological process of the photoengraving pattern on wafer, so the quality of photoetching can directly have influence on the performance of the chip of final formation.
The forming process of contact hole also relates to photoetching, is specially: after spin coating photoresistance glue (PR), PR is exposed, developed forms the photoengraving pattern of contact hole, follow-uply according to photoengraving pattern, carries out etching, finally forms corresponding contact hole.
Wherein, the effective aperture of the contact hole forming due to the aperture of contact hole in photoengraving pattern and etching meets certain relation, therefore, before carrying out the etching of contact hole, conventionally need to measure the aperture of contact hole in photoengraving pattern, if the aperture of contact hole meets the demands in photoengraving pattern, represent that the effective aperture of the contact hole that etching forms also can meet the demands, can carry out etching according to photoengraving pattern.
Above-mentioned measuring process utilizes scanning electron microscope (SEM) to catch the image of contact hole shape in photoengraving pattern conventionally, after capturing the image of contact hole shape, further control SEM focusing, until there is the image of contact hole shape clearly in the visual field, then the aperture of contact hole in image is measured.
Because SEM can launch the electron beam of some strength when focusing, and this electron beam and PR can interact, can make PR shrink phenomenon, thereby make to be greater than expection according to the aperture of the contact hole of photoengraving pattern institute etching, this situation is especially outstanding for the PR of specific dimensions.In actual applications, technician's reason that PR shrinks that begun one's study, does not also propose the conclusion that can accept extensively at present.Simultaneously, technician is also attempting adopting various schemes to avoid PR to shrink phenomenon, for example, by reducing the probe current of SEM and the intensity that voltage reduces electron beam, experiment is found, this method can be alleviated the intensity that PR shrinks to a certain extent, but the drawback that this method is brought is the sharpness that has reduced image, thereby reduced the measurement accuracy of aperture of contact hole, further affected the precision of the etching of contact hole, and suppress original intention that PR shrinks, be exactly to avoid reducing the precision of the etching of contact hole originally, visible, this method is also impracticable in actual production.In a word, prior art does not also propose a kind of method of effectively avoiding PR to shrink under the effect of SEM.
Summary of the invention
In view of this, the invention provides a kind of photoetching method, can avoid PR to shrink under the effect of SEM.
For solving the problems of the technologies described above, technical scheme of the present invention is achieved in that
A photoetching method, the method comprises:
A, in wafer surface, form photoresistance glue PR, and PR is exposed, developed form after photoengraving pattern, to wafer surface sprinkling HMDS HMDS;
B, employing scanning electron microscope SEM focus after catching photoengraving pattern, until occur in the visual field stopping focusing after photoengraving pattern clearly;
C, employing deionized water DIW rinse wafer surface;
D, measure the critical size CD of the photoengraving pattern in the SEM visual field, if CD reaches preset requirement, process ends; Otherwise, remove photoengraving pattern, then return to execution step A.
Between described step C and step D, the method further comprises:
Wafer is toasted;
Wafer is dried.
The method of described sprinkling HMDS is: adopt the gas phase mode of coating to spray HMDS to wafer surface.
The pressure that described gas phase is coated is 65,000 handkerchief to 1,000 hundred handkerchiefs.
Described baking is the rigid baking of high pressure.
Pressure during the rigid baking of described high pressure is 5 kPas to 10 kPas.
Rotating speed during described drying is 1000 rpms to 3000 rpms.
According to technical scheme provided by the present invention, in wafer surface, form PR, and PR is exposed, develop and form after photoengraving pattern, to wafer surface, spray HMDS, then after adopting SEM to catch photoengraving pattern, focus, until occur in the visual field stopping focusing after photoengraving pattern clearly, like this, process in focusing, SEM can send electron beam, under the effect of electron beam, by material 2 parcels, (material 2 is transformed by HMDS and PR on the top layer of PR, the molecular formula of material 2 is shown in the record of embodiment part), because material 2 shows hardlyer physically, therefore, after the top layer of PR is wrapped up by hard material 2, shape is difficult to change, therefore avoided PR to shrink under the effect of SEM.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of a kind of photoetching method provided by the present invention.
Fig. 2～Fig. 6 is the process diagrammatic cross-section of a kind of photoetching method embodiment provided by the present invention.
Embodiment
For making object of the present invention, technical scheme and advantage clearer, referring to the accompanying drawing embodiment that develops simultaneously, scheme of the present invention is described in further detail.
Core concept of the present invention is: in wafer surface, form PR, and PR is exposed, developed after formation photoengraving pattern, to wafer surface, spray HMDS, process in focusing, SEM can send electron beam, under the effect of electron beam, the top layer of PR is by material 2 parcels (material 2 is transformed by HMDS and PR), because material 2 shows hardlyer physically, therefore, after the top layer of PR is wrapped up by hard material 2, shape is difficult to change, and has therefore avoided PR to shrink under the effect of SEM.
Fig. 1 is the process flow diagram of a kind of photoetching method provided by the present invention.As shown in Figure 1, the method comprises;
So far, this flow process finishes.
Below by an embodiment, a kind of photoetching method provided by the present invention is described in detail, the photoetching method of contact hole of only take is in the following embodiments example.
Fig. 2～Fig. 6 is the process diagrammatic cross-section of a kind of photoetching method embodiment provided by the present invention, and the method comprises:
Step 201, referring to Fig. 2, at the surperficial spin coating PR of dielectric layer 101 of wafer, thereby and exposes, develops PR and form the photoengraving pattern 102 of contact hole.
Step 202, referring to Fig. 3, sprays HMDS (HMDS) 103, and the HMDS103 after sprinkling covers the surface of whole dielectric layer 101 and the surface of photoengraving pattern 102.
The method of spraying HMDS can adopt gas phase of the prior art (vapor coating) mode of coating, be specially: HMDS is inputed in the closed container of placing wafer with the form of gaseous state, like this, the HMDS film that one deck is very thin will be attached to wafer surface.
Preferably, the pressure that in the present embodiment, gas phase is coated is 65,000 handkerchiefs (hpa)～1000, hundred handkerchiefs (hpa).
Wherein, the molecular formula of HMDS is:
A kind of typical molecular formula of PR is:
When HMDS is sprayed to behind photoengraving pattern surface, HMDS molecule can be combined by Van der Waals force with the surperficial molecule of PR, generates:
Step 203, referring to Fig. 4, focuses after employing SEM catches photoengraving pattern 102, until occur in the visual field stopping focusing after photoengraving pattern 102 clearly.
Wherein, SEM catches the method for pattern and the method for focusing is same as the prior art, and it will not go into details herein.
In the process of focusing, SEM can send electron beam, and under the effect of electron beam, the material 1 on PR surface can following chemical reaction occur with airborne water vapour:
By above-mentioned chemical equation, can be found out, under the effect of electron beam, the material 1 on PR surface can be converted into
(for convenience of description, this material is represented with material 2, in Fig. 4, uses numbering 105 to represent material 2).
After this step is finished, material 2 is positioned at the top layer of PR, and because material 2 shows hardlyer physically, therefore, after the top layer of PR is wrapped up by hard material 2, shape is difficult to change, and has therefore avoided the contraction of PR.Our experiments show that, even if the electron beam irradiation of SEM is surperficial at PR, the shape of PR is also difficult for changing.
Step 204, referring to Fig. 5, adopts deionized water (DIW) scouring media layer 101 and photoengraving pattern 102, then toasts (bake).
Adopt after DIW scouring media layer 101, the HMDS on dielectric layer 101 surfaces can be removed, adopt DIW to rinse after photoengraving pattern 102, the HMDS that PR surface can not participated in to chemical reaction removes.
The object of baking is to impel carrying out fast of chemical reaction, makes the material 1 on PR surface be converted into as far as possible rapidly material 2 and NH
3, make the NH generating simultaneously
3from PR surface, depart from as early as possible, and have the effect of drying crystal wafer.
Preferably, described baking is the rigid baking of high pressure (high pressure hard bake), and pressure during the rigid baking of high pressure is 5 kPas of (kpa)～10 kPa (kpa).
Step 205, participates in Fig. 6, dries (spin dry).
The object drying is: the NH that makes generation
3from PR surface, depart from as early as possible, and remove the DIW in step 204 simultaneously, so that wafer is dried.
Preferably, rotating speed during drying is 1000 rpms of (rpm)～3000 rpm (rpm).
Step 206, measures the critical size (CD) of the photoengraving pattern 102 in the SEM visual field, if CD reaches preset requirement, and process ends; Otherwise, remove photoengraving pattern, then return to execution step 201 (step 206 figure is not shown).
This step is same as the prior art, if the aperture of contact hole reaches requirement in photoengraving pattern, finish photoetching flow process, follow-uply according to current photoengraving pattern, carry out etching, if the aperture of contact hole does not meet the demands in photoengraving pattern, photoengraving pattern is carried out to ashing, the method for ashing is identical with the method for ashing PR in prior art, and then regenerates photoengraving pattern.
So far, this flow process finishes.
As seen from the above technical solutions, in wafer surface, form PR, and PR is exposed, developed after formation photoengraving pattern, to wafer surface, spray HMDS, process in focusing, SEM can send electron beam, under the effect of electron beam, the top layer of PR is by material 2 parcels (material 2 is transformed by HMDS and PR), because material 2 shows hardlyer physically, therefore, after the top layer of PR is wrapped up by hard material 2, shape is difficult to change, and has therefore avoided PR to shrink under the effect of SEM.
The above, be only preferred embodiment of the present invention, is not intended to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. a photoetching method, the method comprises:
A, in wafer surface, form photoresistance glue PR, and PR is exposed, developed form after photoengraving pattern, to wafer surface sprinkling HMDS HMDS;
B, employing scanning electron microscope SEM focus after catching photoengraving pattern, until occur in the visual field stopping focusing after photoengraving pattern clearly;
C, employing deionized water DIW rinse wafer surface;
D, measure the critical size CD of the photoengraving pattern in the SEM visual field, if CD reaches preset requirement, process ends; Otherwise, remove photoengraving pattern, then return to execution step A.
2. method according to claim 1, is characterized in that, between described step C and step D, the method further comprises:
Wafer is toasted;
Wafer is dried.
3. method according to claim 2, is characterized in that, the method for described sprinkling HMDS is: adopt the gas phase mode of coating to spray HMDS to wafer surface.
4. method according to claim 3, is characterized in that,
The pressure that described gas phase is coated is 65,000 handkerchief to 1,000 hundred handkerchiefs.
5. method according to claim 2, is characterized in that, described baking is the rigid baking of high pressure.
6. method according to claim 5, is characterized in that, pressure during the rigid baking of described high pressure is 5 kPas to 10 kPas.
7. method according to claim 2, is characterized in that, rotating speed during described drying is 1000 rpms to 3000 rpms.
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| CN201010557695.5A CN102478762B (en) | 2010-11-24 | 2010-11-24 | Photoetching method |
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| CN201010557695.5A CN102478762B (en) | 2010-11-24 | 2010-11-24 | Photoetching method |
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| CN102478762A CN102478762A (en) | 2012-05-30 |
| CN102478762B true CN102478762B (en) | 2014-02-26 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1268678A (en) * | 1999-03-31 | 2000-10-04 | 因芬尼昂技术北美公司 | Method for improving etching-resistance ability of photoetching gum |
| CN100498544C (en) * | 2006-03-20 | 2009-06-10 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing critical dimension of photoresist contact hole pattern |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR950004908B1 (en) * | 1992-09-09 | 1995-05-15 | 삼성전자주식회사 | Photoresist compositions and patterning method of using them |
| KR100200685B1 (en) * | 1992-12-04 | 1999-06-15 | 윤종용 | Method of forming fine pattern with photo-lithography |
| KR0140472B1 (en) * | 1994-10-12 | 1998-06-15 | 김주용 | Method for forming a photoresist pattern |
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- 2010-11-24 CN CN201010557695.5A patent/CN102478762B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1268678A (en) * | 1999-03-31 | 2000-10-04 | 因芬尼昂技术北美公司 | Method for improving etching-resistance ability of photoetching gum |
| CN100498544C (en) * | 2006-03-20 | 2009-06-10 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing critical dimension of photoresist contact hole pattern |
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| CN102478762A (en) | 2012-05-30 |
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