CN102468208B - Chuck and semiconductor processing device - Google Patents
Chuck and semiconductor processing device Download PDFInfo
- Publication number
- CN102468208B CN102468208B CN201010547525.9A CN201010547525A CN102468208B CN 102468208 B CN102468208 B CN 102468208B CN 201010547525 A CN201010547525 A CN 201010547525A CN 102468208 B CN102468208 B CN 102468208B
- Authority
- CN
- China
- Prior art keywords
- chuck
- main body
- chuck main
- cooling
- insulation part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a chuck used in a vacuum processing chamber. The chuck comprises a chuck main body, a cooling part and an expansion heat insulation assembly, wherein the expansion heat insulation assembly is arranged between the cooling part and the chuck main body, a sealed space is limited by the expansion heat insulation assembly, the chuck main body and the cooling part, the cooling part is used for removing heat generated in the chuck main body by using heat conduction gas in the sealed space, the expansion heat insulation assembly comprises an upper heat insulation part, a lower heat insulation part and an annular thin wall part, the upper heat insulation part is in hermetic contact with the chuck main body, the lower heat insulation part is in hermetic contact with the cooling part, and the annular thin wall part is arranged between the upper heat insulation part and the lower heat insulation part. With the adoption of the chuck, the problem of thermal expansion and heat insulation can be thoroughly solved, and the temperature uniformity of the chuck is effectively improved. Therefore, the chuck can realize wafer treatment under a high-temperature range such as above 200 DEG C.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of chuck and semiconductor processing device.
Background technology
Along with the development of semiconductor preparing process, plasma apparatus particularly inductively coupled plasma (ICP) device is widely used in the manufacturing process of integrated circuit (IC) or MEMS.A large amount of active particle in plasma and substrate mainly interact and make material surface that various physical and chemical reaction occur by plasma apparatus, thus make material surface performance obtain change.Wherein, active particle comprises: the atom of electronics, ion, excitation state, molecule and free radical.These active particles are in the manufacture of based semiconductor processing unit, and what multilayer material can be replaced deposits to substrate surface and etch this multilayer material from substrate surface.
In plasma device, chuck is parts of wherein outbalance, be widely used in integrated circuit fabrication process process, particularly the technique such as plasma etching (ETCH), physical vapour deposition (PVD) (PVD), chemical vapour deposition (CVD) (CVD).Chuck is mainly used in reative cell internal fixtion, support and transmits wafer (Wafer), and provides direct current (DC) bias for wafer and control the temperature of wafer surface.But low temperature chucking work temperature general control is within 120 DEG C, and after entering 32-22 nanometer technology band, high-K gate dielectric and metal gate electrode MOS device are introduced into IC production technology.
Summary of the invention
The present invention is intended at least one of solve the problems of the technologies described above.
For this reason, the object of the invention is to propose a kind of chuck be used in vacuum processing chamber, this chuck can realize Substrate treatment under high temperature and also structure simple, easy to maintenance and thoroughly solve thermal expansion and heat-insulating problem, in addition, this chuck can improve the temperature homogeneity of chuck effectively.
Another object of the present invention is to propose a kind of semiconductor processing device with above-mentioned chuck.
To achieve these goals, the embodiment of first aspect present invention proposes a kind of chuck be used in vacuum processing chamber, comprising: chuck main body, is provided with heater block in described chuck main body; Cooling-part, described cooling-part and described chuck main body are oppositely arranged and spaced apart preset distance; And expansion insulating assembly, the upper surface that described expansion insulating assembly is located at described cooling-part is connected with the lower surface of described chuck main body, described expansion insulating assembly, described chuck main body and described cooling-part limit seal cavity and described cooling-part is suitable for utilizing the heat-conducting gas in seal cavity to remove the heat produced in described chuck main body, wherein said expansion insulating assembly comprises: upper insulation part, and described upper insulation part seals with described chuck main body and contacts; Lower insulation part, described lower insulation part seals with described cooling-part and contacts; Be arranged on the annular thin wall portion between described upper insulation part and described lower insulation part.
According to the chuck be used in vacuum processing chamber of the embodiment of the present invention, by arranging expansion insulating assembly between chuck main body and cooling-part, thus can thoroughly solve thermal expansion and heat-insulating problem, effectively improving the temperature homogeneity of chuck.Thus, chuck can be implemented in the wafer processing process under the high temperature section of such as more than 200 degree.
In one embodiment of the invention, described chuck comprises further: support component, for supporting described cooling-part; And insulating element, described insulating element is connected between described support component and described cooling-part hermetically.
In one embodiment of the invention, metallic packing ring is provided with between described upper insulation part and described chuck main body.Thus, during chuck main body thermal cycle, the hermetic seal of seal cavity can be kept.
In one embodiment of the invention, described metallic packing ring is CF flange form sealing ring, metal C type circle or the U-shaped circle of metal.Thus, by adopting metallic packing ring as seal, the sealing that seal cavity reaches more excellent can be made.
In one embodiment of the invention, between described upper insulation part and described lower insulation part, radially spacer sleeve is provided with multiple annular thin wall portion, and wherein most interior annular thinner wall section and described chuck main body, cooling-part, upper insulation part and lower insulation part form described seal cavity.Thus, be separated by a distance at chuck main body and cooling-part, form seal cavity between the two.Thus when in seal cavity during falling heat-transfer gas, heat can be transmitted to from the heated portion of chuck main body part of catching a cold.
In one embodiment of the invention, be positioned at described in annular thin wall portion outside most interior annular thinner wall section sidewall on be formed with perforate.Thus, vacuum can be formed at the inner space of expansion insulating assembly.
In one embodiment of the invention, described annular thin wall portion is respectively welded to described upper insulation part and lower insulation part.Thus, upper insulation part can be connected with annular thin wall portion more firmly with lower insulation part.
In one embodiment of the invention, described chuck comprises further:
Focusing ring, described focusing ring is fixed on the outer peripheral portion of described chuck main body, for carrying out spacing to substrate; Basic ring, described basic ring is fixed on the outer circumferential side of described expansion insulating assembly and is positioned at the downside of described focusing ring, for supporting described focusing ring.
Thus, the position of substrate can be limited by focusing ring, and can confine a plasma on substrate further.
The embodiment of second aspect present invention has gone out a kind of semiconductor processing device, comprising: reaction chamber and the chuck be positioned over for carrying substrates in described reaction chamber, wherein said chuck is the chuck of above-mentioned first aspect embodiment.
According to the semiconductor processing device of the embodiment of the present invention, by arranging expansion insulating assembly between chuck main body and cooling-part, thus can thoroughly solve thermal expansion and heat-insulating problem, effectively improving the temperature homogeneity of chuck.Thus, chuck can be implemented in the wafer processing process under the high temperature section of such as more than 200 degree.
The aspect that the present invention adds and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
The present invention above-mentioned and/or additional aspect and advantage will become obvious and easy understand from the following description of the accompanying drawings of embodiments, wherein:
Fig. 1 is the schematic diagram of the chuck be used in vacuum processing chamber according to an embodiment of the invention;
The schematic diagram of the expansion insulating assembly that Fig. 2 is chuck shown in Fig. 1;
Fig. 3 is the schematic diagram of semiconductor processing device according to an embodiment of the invention; With
Fig. 4 utilizes the process chart carrying out Substrate treatment according to the semiconductor processing device of the embodiment of the present invention.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
In describing the invention, term " on ", D score, "left", "right", " vertically ", " level ", " interior ", the orientation of the instruction such as " outward " or position relationship be based on orientation shown in the drawings or position relationship, be only the present invention for convenience of description instead of require that the present invention with specific azimuth configuration and operation, therefore must can not be interpreted as limitation of the present invention.
First the chuck be used in vacuum processing chamber according to the embodiment of the present invention is described with reference to the drawings below.Wherein, Fig. 1 is the structural representation of the chuck be used in vacuum processing chamber according to an embodiment of the invention; Fig. 2 is the schematic diagram of expansion insulating assembly according to an embodiment of the invention.
As shown in Figure 1-2, according to the chuck 100 be used in vacuum processing chamber of the embodiment of the present invention comprise chuck main body 14, cooling-part 7, be located at cooling-part 7 upper surface on and the expansion insulating assembly 8 be connected with the lower surface of chuck main body 14.Chuck 100 is arranged in vacuum processing chamber, and vacuum processing chamber can be high-temperature vacuum process chamber.Alternatively, term " high temperature " can refer to temperature and reaches more than 200 degree or 200 degree herein.
Alternatively, the expansion insulating assembly 8 of the embodiment of the present invention, except may be used for chuck 100, can also be used for other substrate bearing device.
As shown in Figure 1, in chuck main body 14, heater block 12 is provided with.In one embodiment of the invention, heater block 3 can be selectivity heater block.
Heater block 12 can heat chuck main body 14, and then controls the temperature being supported on substrate 13 on chuck main body 14 outer surface, makes chuck main body 14 and substrate 13 can maintain temperature needed for reaction.
Chuck main body 14 can adopt one or more ceramic material manufactures, and wherein ceramic material comprises: nitride, as aluminium nitride, boron nitride and silicon nitride; Carbide, as carborundum and boron carbide; Oxide, as aluminium oxide etc.Above-mentioned ceramic material can filling or not filling filler, such as must the particle of shape, threadiness etc. or percolated metal, such as silicon.
In one embodiment of the invention, chuck main body 14 can adopt aluminium nitride ceramics manufacture.Due to aluminium nitride ceramics excellent thermal conductivity, substrate 13 is positioned at the upper surface with chuck main body 14, and the heating temperatures of substrate 13 can be reached 200-400 DEG C by heater block 12.The material of heater block 12 can adopt Mo to manufacture.
Chuck main body 14 can be formed by multiple method, and citing below describes two kinds of methods wherein.
First method: first compacted powder or stream casting powder, form chuck main body shape, heater block 12 grade is embedded wherein by ceramic powders; Then sintered powder, makes chuck main body harden.
Second method: ceramic material sheet can be adopted to form chuck main body 14, above-mentioned potsherd has the wire pattern of heater block 12 and electric power connection line, then these potsherds stacked, around each layer of knot, thus forms chuck main body 14.
As shown in Figure 1, cooling-part 7 and chuck main body 14 are oppositely arranged and spaced apart preset distance.Expansion insulating assembly 8 is arranged between cooling-part 7 and chuck main body 14, thus expansion insulating assembly 8, chuck main body 14 and cooling-part 7 can limit seal cavity 21.Cooling-part 7 can utilize the heat-conducting gas in seal cavity 21 to remove the heat produced in chuck main body 14.And then be formed with the second gas passage 25 in chuck main body 14, the heat-conducting gas in seal cavity 21 can be passed between the upper surface of chuck main body 14 and the lower surface of substrate 13, heat conduction is with control card disc main body 14 and substrate 13 temperature.
As shown in Figure 2, the expansion insulating assembly 8 annular thin wall portion 83 that comprises insulation part 81, lower insulation part 82 and be arranged between insulation part 81 and lower insulation part 82.
Chuck main body 14 is fixedly connected with upper insulation part 81 by vacuum screw.Little gap is formed between the lower surface and the upper surface of upper insulation part 81 of chuck main body 14.For keeping the gas-tight seal in above-mentioned gap, needing that wall part 81 is sealed with chuck main body 14 and contacting.Because the temperature of chuck main body 14 is too high, common elastic seal ring, as o-ring sealing ring cannot normally work.Therefore in the present embodiment, upper insulation part 81 makes both seal and contact with between chuck main body 14 by arranging metallic packing ring 15.Metallic packing ring 15 at high temperature still can normally work.
In a preferred embodiment of the invention, metallic packing ring 15 can be CF flange form sealing ring, metal C type circle or the U-shaped circle of metal.
Radially multiple annular thin wall portion 83 can be provided with by spacer sleeve between upper insulation part 81 and lower insulation part 82.As shown in Figure 2, annular thin wall portion 83 is three, comprises most interior annular thinner wall section, outermost annular thin wall portion, and in most intermediate annular thinner wall section between interior annular thinner wall section and outermost annular thin wall portion.It is to be appreciated that the present invention is not limited to three annular thin wall portions.Most interior annular thinner wall section and chuck main body 14, cooling-part 7, upper insulation part 81 and lower insulation part 82 form seal cavity 21.
Preferably, the sidewall of outermost annular thin wall portion and intermediate annular thinner wall section is formed with perforate respectively.The sidewall of most interior annular thinner wall section does not form perforate, thus can form vacuum in the inner space of expansion insulating assembly 8.Annular thin wall portion 83 common support expansion insulating assembly 8 and chuck main body 14, thus keep certain mechanical strength.
In one embodiment of the invention, annular thin wall portion 83 can be respectively welded to upper insulation part 81 and lower insulation part 82.
First seal 16 is set at the lower surface of lower insulation part 82 and cooling-part 7, and is connected by vacuum screw mode between lower insulation part 82 with cooling-part 7, make thus to realize vacuum seal between lower insulation part 82 and cooling-part 7.
As shown in Figure 1, the inside of cooling-part 7 the first gas passage 24 of being formed with cooling duct 20 and being connected with seal cavity 21.Cooling duct 20 for passing into coolant, thus cools chuck main body, chuck main body is remained on required temperature.Heat-conducting gas (as helium) can be passed into seal cavity 21 by cooling-part 7 by the first gas passage 24.And then cooling-part 7 inside is also formed with pipe fitting and extends passage 19, and it can be one or more that pipe fitting extends passage 19.
The longitudinal direction of cooling duct 20 is highly less than the longitudinally height of cooling-part 7.The lower ending opening of cooling duct 20, upper end closed.Cooling agent such as water or other cooling agents can be transported to cooling duct 20 by pipe, thus stop the heat going down of chuck main body 14.DC power supply, RF power supply, sensor signal etc. are transported to chuck main body 14 by the power delivery line that pipe fitting extends in passage 19.Wherein, sensor signal can respectively from the temperature sensor on chuck main body 14 and substrate 13.
In one embodiment of the invention, pipe fitting extends passage 19 and is positioned at the center of described cooling-part 7, thus can evenly electric energy exported to send be transported to chuck main body 14.
In one embodiment of the invention, expansion insulating assembly 8 and cooling-part 7 can adopt heat-conducting metal to make, as aluminium, copper, titanium and titanium alloys are made.
Preferably, expansion insulating assembly 8 and cooling-part 7 adopt the metal of heat conduction, as stainless steel, cobalt, nickel, molybdenum, cobalt or their alloy are made.
As shown in Figure 1, chuck 100 insulating element 6 that may further include support component 5 and contact with its vacuum seal.Support component 5 can support cooling-part 7.Insulating element 6 can be connected between cooling-part 7 and support component 5 hermetically.
Insulating element 6 is fixed by vacuum bolt between support component 5 and cooling-part 7.Further, the second seal 17 is set between the lower surface and the upper surface of insulating element 6 of cooling-part 7, thus forms vacuum seal between insulating element 6 and cooling-part 7.3rd seal 18 is set between the lower surface and the upper surface of support component 5 of insulating element 6, thus forms vacuum seal between insulating element 6 and support component 5.Arranged by the above-mentioned vacuum seal to support component 5, insulating element 6 and cooling-part 7, the RF loop in chuck main body 14 can be blocked, thus the treatment effect of substrate 13 can not be had influence on.
In one embodiment of the invention, support component 5 can be " U " type structure, is positioned over the middle part of vacuum processing chamber, with support chuck main body 14, expansion insulating assembly 8 and cooling-part 7 etc.Certainly it will be appreciated by persons skilled in the art that support component 5 can be also the structure of other shapes, as long as support component 5 can realize the object of support chuck main body 14, expansion insulating assembly 8 and cooling-part 7 etc., namely fall into protection scope of the present invention.
In one embodiment of the invention, support component 5 can be processed by aluminium alloy (as 6060 aluminium alloys or 5052 aluminium alloys) and be formed by the surface treatment of sulfuric acid hard anodizing.
Chuck 100 can also comprise basic ring 9 and focusing ring 10.Focusing ring 10 is fixed on the outer peripheral portion of chuck main body 14, can carry out spacing to substrate 13.Basic ring 9 is fixed on the outer circumferential side of expansion insulating assembly 8 and is positioned at the downside of focusing ring 10, for supporting focusing ring 10.
As shown in Figure 1, basic ring 9 covers on insulating element 6, and can support focusing ring 10.Focusing ring 10 covers in basic ring 9 and chuck main body 14 part, and namely focusing ring 10 can around chuck main body 14.Thus, focusing ring 10 can limit the position of substrate 13, and can confine a plasma in further on substrate 13.
In one embodiment of the invention, basic ring 9 is insulation, and it can be made by aluminium oxide, silica and quartz etc.Focusing ring 10 is also for what insulate, and it can be made by aluminium oxide, carborundum, silicon nitride etc.
Shown in composition graphs 1 and Fig. 2, when chuck main body 14 under the effect of heater block 12 heating and expand time, the overall diameter of chuck main body 14 can part just be pressed on metallic packing ring 15, and then makes expansion insulating assembly 8 that elastic deformation occur, thus can hold thermal expansion and the contraction of chuck main body 14.This expansion and contraction are that the thermal cycle during treatment substrate 13 causes.Therefore, the mechanical stress of chuck main body 14 can be reduced as far as possible, thus the working life of chuck main body 14 can be extended.
Specifically, the upper insulation part 81 of expansion insulating assembly 8, lower insulation part 82 and thinner wall section 83 make chuck main body 14 and remaining part form heat isolation.Utilize the heat of chuck main body 14 to isolate, the thermal losses because heat transmission causes chuck main body 14 to cause can be reduced as far as possible.Thus chuck main body 14 can reach high to about 350 DEG C or higher temperature, does not need to consume larger electric energy.
Seal cavity 21 is formed between chuck main body 14, cooling-part 7, upper insulation part 21 and lower insulation part 22.Sealing space 21 makes spaced apart certain distance of chuck main body 14 and cooling-part 7.Heat-conducting gas (as helium) delivers to above-mentioned seal cavity 21 by the first gas passage 24 on cooling-part 7.In seal cavity 21, heat-conducting gas depends on the diameter of substrate 13 under can remaining on any suitable pressure.Because heat-conducting gas is full of seal cavity 21, thus heat can be conducted from the heated portion of chuck main body 14 part of catching a cold.Cooling-part 7 can keep enough low temperature simultaneously, thus elastic sealing element can be used between expansion insulating assembly 14 and cooling-part 7 to seal.It can thus be appreciated that the first seal 16 is elastic sealing element.Further, due to the heat-blocking action of expansion insulating assembly 14, the heat of chuck can not going down, and therefore the temperature of insulating element 6 and support component 5 is all lower.It can thus be appreciated that the second seal 17 and the 3rd seal 18 are elastic sealing element.Elastic sealing element cheap, is conducive to saving cost.
According to the chuck be used in vacuum processing chamber of the embodiment of the present invention, by expansion insulating assembly while effectively fixing chuck, solve chuck expanded by heating and heat insulation problem, thus effectively can improve the temperature homogeneity of chuck.Thus, the processing of wafers under chuck can be implemented on such as 200 degree high temperature section.Further, the expansion insulating assembly of the chuck of the embodiment of the present invention adopts cheap material, saves preparation cost.
Below with reference to Fig. 3, the semiconductor processing device 1000 according to the embodiment of the present invention is described.
As shown in Figure 3, the semiconductor processing device 1000 of one embodiment of the invention, comprises reaction chamber (also can be called vacuum treatment chamber) 200 and chuck as above 100.Wherein, chuck 100 is positioned in reaction chamber 200, can carry the substrate 13 being positioned at chuck 100 upper surface.
In one embodiment of the invention, reaction chamber 200 can be high-temperature vacuum process chamber.Alternatively, term " high temperature " can refer to temperature and reaches more than 200 degree or 200 degree herein.
According to the semiconductor processing device of the embodiment of the present invention, by adopting the chuck with the expansion assembly of as above structure, solving chuck expanded by heating and heat insulation problem, thus effectively can improve the temperature homogeneity of chuck.Thus, the Substrate treatment under chuck can be implemented on such as 200 degree high temperature section.
The technological process utilized according to semiconductor processing device 1000 treatment substrate of the embodiment of the present invention is described below with reference to Fig. 4.
As shown in Figure 4, the technique for the treatment of substrate comprises the steps:
S101: substrate is fixed on chuck in the above-described embodiments;
Substrate 13 is fixed on the outer surface of chuck main body 14.
S102: the heater block heated substrate utilizing chuck;
Heater block 12 can heated chuck main body 14, and then can carry out temperature control to the substrate 13 be supported on chuck main body 14 outer surface, makes chuck main body 14 and substrate 13 can maintain temperature needed for reaction.
S103: utilize the heat-conducting gas be transported in seal cavity to control the temperature of substrate and chuck main body;
Heat-conducting gas (as helium) can deliver to the seal cavity 21 between chuck main body 14, cooling-part 7, upper insulation part 21 and lower insulation part 22 by the first gas passage 24 on cooling-part 7.Heat-conducting gas in seal cavity 21 can arrive between the upper surface of chuck main body 14 and the lower surface of substrate 13 by the second gas passage 25 on chuck main body 14 further, and heat conduction is with control card disc main body 14 and substrate 13 temperature.
S104: treatment substrate.
The substrate 13 be positioned on chuck main body 14 is processed, comprises the steps:
S1041: transport process gas in vacuum processing chamber;
Transport process gas in vacuum treatment chamber.
S1042: make process gas become plasmoid;
To the energising of process gas, form plasma to excite it.Further, during process operation, the exposing surface of this plasma etching substrate 13 is utilized.And during process operation, the outer surface of substrate 13 can carry out coating.
S1043: the process gas etching substrate utilizing plasmoid.
According to above-mentioned Substrate treatment technique, by adopting the chuck with expansion insulating assembly, solving chuck expanded by heating and heat insulation problem, thus effectively can improve the temperature homogeneity of chuck.Thus, the processing of wafers under chuck can be implemented on such as 200 degree high temperature section.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and describe embodiments of the invention, for the ordinary skill in the art, be appreciated that and can carry out multiple change, amendment, replacement and modification to these embodiments without departing from the principles and spirit of the present invention, scope of the present invention is by claims and equivalency thereof.
Claims (7)
1. be used in the chuck in vacuum processing chamber, it is characterized in that, comprising:
Chuck main body, is provided with heater block in described chuck main body;
Cooling-part, described cooling-part and described chuck main body are oppositely arranged and spaced apart preset distance; And
Expansion insulating assembly, the upper surface that described expansion insulating assembly is located at described cooling-part is connected with the lower surface of described chuck main body, described expansion insulating assembly, described chuck main body and described cooling-part limit seal cavity and described cooling-part is suitable for utilizing the heat-conducting gas in seal cavity to remove the heat produced in described chuck main body, and wherein said expansion insulating assembly comprises:
Upper insulation part, described upper insulation part is fixedly connected with described chuck main body, is provided with metallic packing ring between described upper insulation part and described chuck main body;
Lower insulation part, described lower insulation part seals with described cooling-part and contacts;
Be arranged on the annular thin wall portion between described upper insulation part and described lower insulation part, the upper end in wherein said annular thin wall portion is connected with the lower surface of described upper insulation part, the lower end in described annular thin wall portion is connected with the upper surface of described lower insulation part, between described upper insulation part and described lower insulation part, radially spacer sleeve is provided with multiple annular thin wall portion, wherein most interior annular thinner wall section and described chuck main body, cooling-part, upper insulation part and lower insulation part form described seal cavity
Wherein: when heating under the effect of chuck main body at heater block with when expanding, the overall diameter of chuck main body changes, and makes described expansion insulating assembly generation elastic deformation, to hold thermal expansion and the contraction of described chuck main body.
2. chuck according to claim 1, is characterized in that, comprises further:
Support component, for supporting described cooling-part; And
Insulating element, described insulating element is connected between described support component and described cooling-part hermetically.
3. chuck according to claim 1, is characterized in that, described metallic packing ring is CF flange form sealing ring, metal C type circle or the U-shaped circle of metal.
4. chuck according to claim 1, is characterized in that, the sidewall in the annular thin wall portion outside most interior annular thinner wall section described in being positioned at is formed with perforate.
5. chuck according to claim 1, described annular thin wall portion is respectively welded to described upper insulation part and lower insulation part.
6. chuck according to claim 1, is characterized in that, described chuck comprises further:
Focusing ring, described focusing ring is fixed on the outer peripheral portion of described chuck main body, for carrying out spacing to substrate;
Basic ring, described basic ring is fixed on described expansion insulating assembly outer circumferential side and is positioned at the downside of described focusing ring, for supporting described focusing ring.
7. a semiconductor processing device, comprising: reaction chamber and the chuck be positioned over for carrying substrates in described reaction chamber, it is characterized in that, described chuck is the chuck described in claim 1-6 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010547525.9A CN102468208B (en) | 2010-11-16 | 2010-11-16 | Chuck and semiconductor processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010547525.9A CN102468208B (en) | 2010-11-16 | 2010-11-16 | Chuck and semiconductor processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102468208A CN102468208A (en) | 2012-05-23 |
| CN102468208B true CN102468208B (en) | 2015-07-08 |
Family
ID=46071669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010547525.9A Active CN102468208B (en) | 2010-11-16 | 2010-11-16 | Chuck and semiconductor processing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102468208B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794538B (en) * | 2012-10-31 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck and plasma processing device |
| CN103904014B (en) * | 2012-12-31 | 2016-12-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck and reaction chamber |
| CN104377155B (en) * | 2013-08-14 | 2017-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck and plasma processing device |
| CN104752300B (en) * | 2013-12-31 | 2018-09-18 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and reaction chamber |
| CN105990084A (en) * | 2015-03-02 | 2016-10-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Focusing ring, lower electrode mechanism and semiconductor processing equipment |
| CN106816354B (en) * | 2015-12-02 | 2019-08-23 | 北京北方华创微电子装备有限公司 | A kind of lower electrode and reaction chamber |
| CN108987323B (en) * | 2017-06-05 | 2020-03-31 | 北京北方华创微电子装备有限公司 | Bearing device and semiconductor processing equipment |
| CN111199902B (en) * | 2018-11-19 | 2023-02-24 | 拓荆科技股份有限公司 | Thermally isolated wafer support device and method of making the same |
| CN111613509B (en) * | 2019-02-25 | 2023-07-11 | 北京北方华创微电子装备有限公司 | Chuck structure and reaction chamber |
| CN110289241B (en) * | 2019-07-04 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Electrostatic chuck, manufacturing method thereof, process chamber and semiconductor processing equipment |
| CN111192839B (en) * | 2020-01-07 | 2023-05-12 | 贵州振华风光半导体股份有限公司 | Method for controlling internal water vapor content of black ceramic low-melting glass shell integrated circuit |
| US20230118651A1 (en) * | 2021-09-02 | 2023-04-20 | Applied Materials, Inc. | Replaceable electrostatic chuck outer ring for edge arcing mitigation |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1537328A (en) * | 2001-06-28 | 2004-10-13 | ��ķ�о�����˾ | High temperature electrostatic chuck |
-
2010
- 2010-11-16 CN CN201010547525.9A patent/CN102468208B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1537328A (en) * | 2001-06-28 | 2004-10-13 | ��ķ�о�����˾ | High temperature electrostatic chuck |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102468208A (en) | 2012-05-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102468208B (en) | Chuck and semiconductor processing device | |
| JP4849705B2 (en) | Plasma processing apparatus, plasma generation introducing member, and dielectric | |
| TWI692055B (en) | Gas cooled minimal contact area (mca) electrostatic chuck (esc) for aluminum nitride (aln) pvd process | |
| JP4222707B2 (en) | Plasma processing apparatus and method, gas supply ring and dielectric | |
| KR101759742B1 (en) | Heat shield for heater in semiconductor processing apparatus | |
| JP4209057B2 (en) | Ceramic heater, substrate processing apparatus and substrate processing method using the same | |
| TWI759503B (en) | Mounting table structure and processing device | |
| JP4067858B2 (en) | ALD film forming apparatus and ALD film forming method | |
| US20140008352A1 (en) | Heat treatment apparatus | |
| CN102844854A (en) | Multifunctional heater/chiller pedestal for wide range wafer temperature control | |
| CN104377155B (en) | Electrostatic chuck and plasma processing device | |
| TWI710658B (en) | Manufacturing chamber and heat treatment furnace for SiC high temperature oxidation process | |
| JP2012238629A (en) | Heat treatment apparatus | |
| CN102465283B (en) | Chuck and semiconductor processing device | |
| CN103904014B (en) | Electrostatic chuck and reaction chamber | |
| CN101351578A (en) | Differentiated-temperature reaction chamber | |
| JP2009064864A (en) | Semiconductor processing apparatus | |
| CN110352482A (en) | Substrate-placing platform and its Electric liquid processing device and plasma-based processing method | |
| CN111383885B (en) | Substrate mounting table capable of improving temperature control precision and plasma processing equipment | |
| JP2005150606A (en) | Plasma treatment apparatus | |
| JPH08311654A (en) | Plasma cvd apparatus and thin film forming process by plasma cvd | |
| JP2004014892A (en) | High-temperature heating apparatus | |
| JP2001274148A (en) | System and method for plasma processing | |
| JP4165745B2 (en) | Semiconductor wafer holding device | |
| CN220155485U (en) | Plasma processing equipment and lifting ring structure thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 100176 No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beijing North China microelectronics equipment Co Ltd |
|
| CP02 | Change in the address of a patent holder |