CN102467915A - Target and recording layer material for hard disk - Google Patents
Target and recording layer material for hard disk Download PDFInfo
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- CN102467915A CN102467915A CN2010105378422A CN201010537842A CN102467915A CN 102467915 A CN102467915 A CN 102467915A CN 2010105378422 A CN2010105378422 A CN 2010105378422A CN 201010537842 A CN201010537842 A CN 201010537842A CN 102467915 A CN102467915 A CN 102467915A
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- recording layer
- target
- oxide
- layer material
- hard disc
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Abstract
The invention provides a target and a recording layer material for a hard disk. The target is formed by adding an oxide composition into a material which mainly comprises CoPt, CoCrPt or CoCrPtB. In the process of sputtering the target, a high-recording capacity recording layer material for the hard disk is manufactured, the recording layer material for the hard disk comprises 4 to 8 atomic percent of silicon dioxide (SiO2) serving as a main oxide, and the oxide composition at least comprises 0.8 to 5 atomic percent of chromium hemitrioxide (Cr2O3) in main technical characteristics; the Cr2O3 serves as an oxygen compensator; and in the process of sputtering a film, missing oxygen atoms are complemented. Therefore, the target combined by various oxides and the recording layer material for the hard disk are widely applied to a recording layer of a magnetic recording medium for the hard disk, and recording capacity of a storage medium can be improved.
Description
Technical field
The invention relates to a kind of Storage Media, especially a kind of target and be used in the recording layer material of hard disc.
Background technology
The magnetic recording of hard disc is according to magnetized direction at present; Can be divided into horizontal recording (longitudinal magnetic recording) and perpendicular recording (perpendicular magnetic recording; PMR) two kinds; The horizontal recording DOM is the surface of parallel video disc, and the perpendicular recording DOM then is vertical disc surface.The structure of rectilinear recording medium comprises substrate (glass or aluminium), adhesion layer, soft magnetosphere (soft underlayer), crystal seed layer (seed layer), middle layer (intermediate layer), recording layer (recording layer), overlayer (covering layer) and lubricating layer (lubricative layer); As shown in Figure 1, wherein most important gordian technique is at recording layer.As shown in Figure 2; Reported literature IEEETrans.Magn.; Point out in 38 (2002) 1976, in the magnetic recording layer of very thin CoPt base, add oxide, can effectively make oxide be segregated in crystal boundary and do not destroy the crystal structure (comprising HCP phase (Hexagonal close packed) and c-axis orientation) of cobalt-based magnetic crystal grain; And then crystal grain thinning (grain size<10nm), promote the signal noise than (signal-to-noise ratio to reach; SNR) purpose.
As previously mentioned; Obtain the microstructure of graininess thin magnetic film (granular magnetic thin film) by the interpolation oxide; And the performance (recording performance) of good magnetic property (magnetic properties), thermal stability (thermal stability) and readwrite tests, make that the development of the rectilinear recording medium of high density no longer is out of reach.As shown in Figure 1; The recording layer of hard disc generally has the structure of multilayer now; Wherein be called Mag.1 near the ground floor in middle layer, up be successively the second layer (Mag.2), the 3rd layer (Mag.3) ..., the membrane structure of Mag.1 is that ferromagnetic particle is uniformly distributed in the oxide; Come magnetic-particle is isolated by not having an oxide of magnetic, to reduce the noise of recording medium.
Case before the hard disc recording layer material is relevant; In Japanese 2007-031808 patent, point out; Employed target in the sputter process; Wherein can be used to increase the tack of silicon dioxide and CoCrPt-base, the particle in the time of sputter can being reduced (particle) number by the chromium oxide that adds 0.01 to 0.5%; Disclose by No. 270060 patent in Taiwan (No. 20080062575 patent of United States Patent (USP)) in addition, use nonmagnetic silicon (Si) to come base material (substrate), in claim, mention and to use silicon dioxide (SiO as disk (disk)
2), titania (TiO
2), chrome green (Cr
2O
3), titanium monoxide (TiO), tantalum pentoxide (Ta
2O
5) at least one be used as the oxide of grain boundary layer; No. 20020187368 patent of United States Patent (USP) discloses, and adds one second oxide and replenishes SiO
2The oxygen that when sputter, can minus to avoid the formation of pure Si, has in the instructions of this preceding case and mentions the Cr that can use 1 atomic percent (at.%)
2O
3Come as second oxide; No. 20070042227 patent of United States Patent (USP) also discloses; Add the very big different oxides of oxidation free energy difference; Promote the diffusion of atom by being used between redox; Should before can be shown in following table one in the instructions of case by mentioning that its oxide forms, wherein the oxide of A, B, C class is all 2 atomic percents, D and E type oxide can be 0 or 2 atomic percents;
Table one
No. 2006121319 patent of United States Patent (USP) discloses, and mixes after two kinds of oxides, and the average density that its density can more original two kinds of oxides is greater, and so when recording layer material begins to be deposited on above the middle layer, more can not produce pore space structure; No. 20090257144 patent of United States Patent (USP) point out, allocates the content of Cr among the CoCrPt of this suitable target, and collocation is gone up with SiO again
2Be first oxide, TiO
2, Ta
2O
5, Nb
2O
5Be second oxide, make that the contained Co of oxide areas can reduce between magnetic-particle, to promote its signal noise than (SNR).
Hard disc recording layer material now though its recording layer material has the function of record, but still has drawback:
1. the composite target material that contains oxide; The oxygen that in the sputter process, has in the partial oxidation thing is clashed into out with the form of atom; Oxygen atom is easy to detached out in the sputter cavity by the vacuum equipment in the sputtering machine table; Cause the oxide that is deposited on the recording medium to form the oxide of nonstoichiometry (non-stoichiometric) because of anoxic, this non-stoichiometric oxide promptly can't be reached the isolated effect of preferable magnetic-particle.
2. in order to improve above-mentioned shortcoming at the 1st; Hope obtains stoichiometric oxide in sputter process; Need when sputter, in working gas, to add oxygen, but be difficult to accomplish fluid control accurately in the sputter system capable, and might poison (poison) phenomenon in this target material surface formation.
Summary of the invention
For solving the shortcoming of above-mentioned at present used hard disc recording layer material, present sputter process all directly designs the demand of oxygen in this target, and extra interpolation oxygen in working gas not; At present generally can design the oxide of supply oxygen to be Cr mostly
2O
3And CoO, so target of the present invention and be used in the recording layer material of hard disc, it is a kind of target of being made up of multiple oxide, produces hard disc recording layer one high-quality, high recording capacity with this target sputter.
The present invention provides a kind of target, and produces the hard disc recording layer material of a high recording capacity with this target sputter.
Technological means provided by the present invention is to provide a kind of target, and it is formed by adding oxide composition in master's the material again with CoPt, CoCrPt or CoCrPtB; Wherein to comprise atomic percent be 4% to 8% SiO to this oxide composition
2And atomic percent is 0.8% to 5% Cr
2O
3
Preferable, described target, wherein this oxide composition further comprises and is selected from person: the TiO one of at least by the following group that constitutes
2, Ta
2O
5, Nb
2O
5, ZrO
2, Y
2O
3, HfO
2And etc. combination.
Preferable, described target, wherein this oxide composition further comprise the material that is selected from the group that constitutes by following person: Cu, CuO and etc. combination.
The present invention provides a kind of hard disc recording layer material, and it uses foregoing target institute sputter to form;
The recording layer material of this magnetic record medium thus in the technical field known sputtering way accomplish, such as, be not limited to: ion beam sputtering method, electronics electricity slurry method etc.; In of the present invention one preferable concrete example system through obtained by the method that may further comprise the steps:
Preparation one has deposited the substrate of beneath each layer of PMR recording layer, is to carry out sputter among the 10mTorr in the argon gas operating air pressure.
Technological means provided by the present invention is to provide a kind of hard disc recording layer material; It is formed by adding oxide composition with CoPt, CoCrPt or CoCrPtB by main material, and wherein to comprise with the integral material be the SiO of benchmark 4 to 8 atomic percents to this oxide constituent
2, and the Cr of 0.8 to 5 atomic percent
2O
3
Preferable, described hard disc recording layer material, wherein this oxide composition further comprises and is selected from person: the TiO one of at least by the following group that constitutes
2, Ta
2O
5, Nb
2O
5, ZrO
2, Y
2O
3, HfO
2And etc. combination.
Preferable, described hard disc recording layer material, wherein this oxide composition further comprise the material that is selected from by the following group that constitutes: Cu, CuO and etc. combination.
Preferable, described hard disc recording layer material, wherein to account for the ratio of overall volume be 25 to 31 percents by volume to this oxide composition.
Target provided by the present invention and be used in the recording layer material of hard disc, advantage that can obtain and effect are promoted to be had:
1. in this target composition, be the axle center with multiple oxide composition, central with CoO or Cr
2O
3As the compensator of oxygen, make in the sputtering thin film process, supply the oxygen atom that is lacked; By the magnetic recording layer material that this target institute sputter forms, be widely used in the recording layer of hard disc recording medium, can up promote and improve the recording capacity of whole Storage Media.
2. CoO or Cr in the polyoxide
2O
3If can be in recording layer be present in the middle of magnetic crystal grain and the oxide grain boundary layer with Cr-O or Co-O key knot form, then oxide can envelope magnetic crystal grain more complete and equably; Also because the antiferromagnetism (anti-ferromagnetic) of Cr-O so can more effectively do the combination of uncoupling (magnetically decoupling) between magnetic crystal grain, effectively promotes the hc values (Hc) of the signal noise of video disc than (SNR) and film.
Description of drawings
Fig. 1 is the diagrammatic cross-section according to a preferred embodiment of the structure of rectilinear recording medium of the present invention.
Fig. 2 is the micromechanism of CoCrPt-oxide film under transmission electron microscope.
Embodiment
Be energy detail knowledge technical characterictic of the present invention and practical effect; And can implement according to the content of specification, be energy detail knowledge technical characterictic of the present invention and practical effect, and can implement according to the content of specification; Now, be described in detail as follows further with like the preferred embodiment shown in graphic:
The object of the invention is one can effectively completely cut off in the hard disc recording layer the interactive composition of magnetic-particle and form, and in this hard disc recording layer target composition, is the axle center with the polyoxide:
1. with SiO
2It is first oxide.
2. with TiO
2, Ta
2O
5, Nb
2O
5, ZrO
2, Y
2O
3, HfO
2, CuO one of them be second oxide.
3. with Cr
2O
3Or CoO is a trioxide.
Technical characterictic wherein of the present invention is this trioxide, and its role and function are:
1. the compensator of oxygen: making first oxide of sputtering thin film and second oxide is stoichiometry, and when sputter, not be used in extra interpolation oxygen in the working gas.
2. when being present in the middle of magnetic crystal grain and the oxide grain boundary layer with Cr-O or Co-O key knot form, can improving its wetting state (wettability) and make the oxide grain boundary layer can envelope magnetic crystal grain more complete and equably.
3. in the time of in the middle of Cr-O or Co-O key knot form are present in magnetic crystal grain and oxide grain boundary layer; Because Cr-O has antiferromagnetism (anti-ferromagnetic), so can more effectively do the combination of uncoupling (magnetically decoupling) between magnetic crystal grain.
In the selection of above-mentioned oxide, first oxide is with SiO
2For its glass commonly used forms agent (glass former) material, it is more level and smooth to form fine and close grain boundary layer and its surface; Second oxide is a high-temperature oxide, generally when sputter forms film, can first nucleation (nucleate) make the magnetic-particle refinement; Trioxide is metal that oxidation free energy (Gibbs free energy) is higher than first and second oxide and its oxide also is prone to oxidation than Co and Pt a oxide.
The technological means that the present invention adopted is to provide a target, and it is formed by adding oxide composition in master's the material again with CoPt, CoCrPt or CoCrPtB; Wherein to comprise atomic percent be 4% to 8% SiO to this oxide composition
2And atomic percent is 0.8% to 5% Cr
2O
3
The contained oxide composition of this target further comprises and is selected from person: the TiO one of at least by the following group that constitutes
2, Ta
2O
5, Nb
2O
5, ZrO
2, Y
2O
3, HfO
2And etc. combination.
The contained oxide composition of this target further comprise the material that is selected from the group that constitutes by following person: Cu, CuO and etc. combination.
The present invention provides this target in the sputter process; Produce hard disc recording layer material one high-quality, high recording capacity; The recording layer material of this magnetic record medium thus in the technical field known sputtering way accomplish, such as, be not limited to: ion beam sputtering method, electronics electricity slurry method etc.; In of the present invention one preferable concrete example system through obtained by the method that may further comprise the steps:
Preparation one has deposited the substrate of beneath each layer of PMR recording layer, is among the 10mTorr above-mentioned this hard disc recording layer material to be carried out sputter in the argon gas operating air pressure.
The present invention uses above-mentioned this target in the sputter process; Produce hard disc recording layer material one high-quality, high recording capacity; It is formed by adding oxide composition with CoPt, CoCrPt or CoCrPtB by main material, and wherein to comprise with the integral material be the SiO of benchmark 4 to 8 atomic percents to this oxide composition
2And the Cr of at least 0.8 to 5 atomic percent
2O
3
The contained oxide composition of this hard disc recording layer material further comprises and is selected from person: the TiO one of at least by the following group that constitutes
2, Ta
2O
5, Nb
2O
5, ZrO
2, Y
2O
3, HfO
2And etc. combination.
The contained oxide composition of this hard disc recording layer material further comprises the material that is selected from by the following group that constitutes: Cu, CuO and combination thereof.
The ratio of the overall volume that the contained oxide constituent of this hard disc recording layer material is shared is 25 to 31 percents by volume.
Embodiment
Make a CoCrPt-x (SiO
2)-y (2
NdOxide)-z (Cr
2O
3) target, be decided to be the A target; Make a CoCrPt-x (SiO
2)-y (2
NdOxide)-z (ZrO
2) target, be decided to be the B target; Central x, y, z are the atomic percent of each oxide, wherein 0.8%≤z≤5% and 6%≤x+y≤11%; Prepare one deposited each layer under the PMR recording layer substrate, be to carry out sputter among the 10mTorr in the Ar operating air pressure, face sputter one CoCrPtB layer on it again after sputter is intact; Utilize vibrating example magnetizer (VSM, vibrating sample magnetometer) to measure the hc values (Hc) of its sputter rear film, measure the SNR of video disc with Guzik test system.
Can know that from following table two above-mentioned A, B two targets are compared, when target contains Cr
2O
3The time, its SNR and Hc are all preferable, especially work as Cr
2O
3Content during greater than 2 atomic percents, more remarkable effect; By appearing in the experiment, when target contains Cr
2O
3The time can effectively promote the SNR and the Hc of video disc; Can further comprise boron (B) among the central CoCrPt.
Table two
The present invention clearly and in detail defines the employed oxide kind of this magnetic recording layer material and content, wherein Cr
2O
3Addition is greater than more than 0.8 atomic percent; And used technological means reaches the oxide of " can effectively completely cut off coupling between magnetic-particle (leaning on the antiferromagnetism of Cr-O) " for selecting one " oxygen atom can effectively be provided to first and second oxide ", " can effectively promote the adhesion (adhesion) of oxide and magnetic-particle " for use; By this target and be used in the magnetic recording layer material of hard disc; The recording layer that is widely used in hard disc recording medium can up promote and improve the recording capacity of whole Storage Media.
Claims (9)
1. a target is characterized in that, this target is formed by adding oxide composition in master's the material again with CoPt, CoCrPt or CoCrPtB; Wherein to comprise atomic percent be 4% to 8% SiO to this oxide composition
2And atomic percent is 0.8% to 5% Cr
2O
3
2. target as claimed in claim 1 is characterized in that, this oxide composition further comprises and is selected from person: the TiO one of at least by the following group that constitutes
2, Ta
2O
5, Nb
2O
5, ZrO
2, Y
2O
3, HfO
2And etc. combination.
3. target as claimed in claim 1 is characterized in that, this oxide composition further comprise the material that is selected from by the following group that constitutes: Cu, CuO and etc. combination.
4. a hard disc recording layer material is characterized in that, this hard disc recording layer material is to use and a kind ofly forms like each described target institute sputter in the claim 1 to 3.
5. hard disc recording layer material as claimed in claim 4; It is characterized in that; This hard disc recording layer material is formed by adding oxide composition with CoPt, CoCrPt or CoCrPtB by main material, and wherein to comprise with the integral material be the SiO of benchmark 4 to 8 atomic percents to this oxide constituent
2And the Cr of 0.8 to 5 atomic percent
2O
3
6. hard disc recording layer material as claimed in claim 5 is characterized in that, this oxide composition further comprises and is selected from person: the TiO one of at least by the following group that constitutes
2, Ta
2O
5, Nb
2O
5, ZrO
2, Y
2O
3, HfO
2And etc. combination.
7. like claim 5 or 6 described hard disc recording layer materials, it is characterized in that, this oxide composition further comprise the material that is selected from by the following group that constitutes: Cu, CuO and etc. combination.
8. like claim 5 or 6 said hard disc recording layer materials, it is characterized in that the ratio that this oxide composition accounts for overall volume is 25 to 31 percents by volume.
9. hard disc recording layer material as claimed in claim 7 is characterized in that, the ratio that this oxide composition accounts for overall volume is 25 to 31 percents by volume.
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CN2010105378422A CN102467915A (en) | 2010-11-10 | 2010-11-10 | Target and recording layer material for hard disk |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110117775A (en) * | 2018-02-05 | 2019-08-13 | 光洋应用材料科技股份有限公司 | The platinum boron rhenium of chromium containing cobalt sputtered target material, the platinum of chromium containing cobalt boron rhenium layer and its preparation method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1860530A (en) * | 2004-03-15 | 2006-11-08 | 富士电机电子技术株式会社 | Vertical magnetic recording medium, process for producing the same and magnetic recording apparatus |
CN1884611A (en) * | 2005-06-24 | 2006-12-27 | 黑罗伊斯有限公司 | Enhanced oxygen non-stoichiometry compensation for thin films |
US20090052074A1 (en) * | 2007-08-21 | 2009-02-26 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording media and magnetic storage apparatus using the same |
-
2010
- 2010-11-10 CN CN2010105378422A patent/CN102467915A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1860530A (en) * | 2004-03-15 | 2006-11-08 | 富士电机电子技术株式会社 | Vertical magnetic recording medium, process for producing the same and magnetic recording apparatus |
CN1884611A (en) * | 2005-06-24 | 2006-12-27 | 黑罗伊斯有限公司 | Enhanced oxygen non-stoichiometry compensation for thin films |
US20090052074A1 (en) * | 2007-08-21 | 2009-02-26 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording media and magnetic storage apparatus using the same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110117775A (en) * | 2018-02-05 | 2019-08-13 | 光洋应用材料科技股份有限公司 | The platinum boron rhenium of chromium containing cobalt sputtered target material, the platinum of chromium containing cobalt boron rhenium layer and its preparation method |
CN110117775B (en) * | 2018-02-05 | 2021-03-05 | 光洋应用材料科技股份有限公司 | Sputtering target containing cobalt chromium platinum boron rhenium, cobalt chromium platinum boron rhenium layer and preparation method thereof |
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Application publication date: 20120523 |