CN102467268B - Touch screen and manufacture method thereof - Google Patents
Touch screen and manufacture method thereof Download PDFInfo
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- CN102467268B CN102467268B CN201010531988.6A CN201010531988A CN102467268B CN 102467268 B CN102467268 B CN 102467268B CN 201010531988 A CN201010531988 A CN 201010531988A CN 102467268 B CN102467268 B CN 102467268B
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Abstract
The invention discloses a touch screen and a manufacture method of the touch screen, which relates to the field of liquid crystal display and has the advantages that the ultra-thin effect of the touch screen can be realized, and the light transmission rate is improved. The touch screen comprises a first base plate, a second base plate and a touch screen controller, wherein the first base plate and the second base plate are in opposite arrangement, a first circuit layer and a second circuit layer are formed between the first base plate and the second base plate, in addition, an insulating layer is formed between the first circuit layer and the second circuit layer, the first circuit layer comprises at least one memory alloy node and at least one closed circuit for supplying electricity to the memory alloy node, the second circuit layer comprises at least one conducting wire connected with the touch screen controller, and in addition, each conducting wire corresponds to one memory alloy node. In addition, the invention simultaneously discloses the manufacture method of the touch screen. The scheme provided by the invention is applicable to the touch screen.
Description
Technical field
The present invention relates to a kind of touch-screen and preparation method thereof.
Background technology
Along with people are to multiple demands, the mode of controlling liquid crystal indicator with touch-screen replacement keyboard or mouse is more and more welcome.At present, more conventional touch-screen is resistive touch screen and capacitive touch screen.
Wherein, the structure of resistive touch screen as shown in Figure 1, comprises upper substrate 015, infrabasal plate 011, and upper conductive layer 014, lower conductiving layer 012, thus and between upper and lower conductive layers, be provided with spacer 016 and form cavity 013.Due to the existence of cavity 013, just caused the thicker and described cavity of resistive touch screen can the serious transmission that hinders light, cause the transmissivity of resistive touch screen lower.Similarly, for capacitive touch screen, also there is similar deficiency.
Summary of the invention
Embodiments of the invention provide a kind of touch-screen and preparation method thereof, to realize the object of touch-screen ultrathin, high light transmission rate.
For achieving the above object, embodiments of the invention adopt following technical scheme:
A kind of touch-screen, comprise the first substrate and second substrate and the touch screen controller that are oppositely arranged, and, between described first substrate and second substrate, be formed with the first circuit layer and second circuit layer, and be formed with the insulation course that is provided with via hole between described the first circuit layer and described second circuit layer;
Described the first circuit layer comprises at least one memorial alloy node, and is the circuit pathways of described at least one memorial alloy node power supply;
Described second circuit layer comprises at least one wire being connected with described touch screen controller, and the corresponding memorial alloy node of every wire, so that described touch screen controller detects the connection status between the conducting state of memorial alloy node described in each or wire that described in each, memorial alloy is corresponding with it.
A method for making for touch-screen, comprises the following steps:
Step a1, on first substrate, form at least one memorial alloy node;
Step a2, on second substrate, form circuit pathways layer and second circuit layer, between described circuit pathways layer and second circuit layer, be formed with insulation course, and be provided with via hole at described insulation course;
Step a3, by described first substrate and second substrate to box, and the memorial alloy node on described first substrate after box and the circuit pathways layer on described second substrate are joined and form the first circuit layer, and this first circuit layer is connected by described via hole with described second circuit layer;
Step a4, described second circuit layer is connected to the touch screen controller of described touch-screen.
A method for making for touch-screen, comprises the following steps:
Step b1, on first substrate, form the circuit pathways of the first circuit layer, and at least one memorial alloy node is evenly set in described circuit pathways;
Step b2, on second substrate, form second circuit layer, and form insulation course on described second substrate, and described insulation course is provided with via hole;
Step b3, by described first substrate and second substrate to box, and can be connected by described via hole with the second circuit layer on described second substrate the memorial alloy node on described first substrate after box;
Step b4, described second circuit layer is connected to the touch screen controller of described touch-screen.
Touch-screen that the embodiment of the present invention provides and preparation method thereof, by at least one memorial alloy node is set, use memorial alloy to produce under external force deformation, while removing external force, can recover the characteristic of original form, the external force at this Nodes changes by induction to make described memorial alloy node, the effect of similar circuit switch and cause change in electric, then by circuit, connect the variation of described electric signal is passed to touch screen controller, to realize the detection that described memorial alloy Nodes external force is changed; Because described touch-screen changes and detects separately the external force of memorial alloy node described in each, this has just strengthened the sensitivity of this touch-screen, and is also easy to realize the multi-point touch to this touch-screen; Compared with prior art, touch-screen that the embodiment of the present invention provides and preparation method thereof, with the insulation course that is provided with via hole, replace the cavity in resistive touch screen and capacitive touch screen, because the relatively described cavity ratio of described insulation course is thinner, so contribute to realize the ultrathin of touch-screen, solved the lower problem of light transmission rate that described cavity causes simultaneously.
Accompanying drawing explanation
Fig. 1 is the structural drawing of resistive touch screen in prior art;
The structural drawing of the touch-screen that Fig. 2 provides for embodiment mono-;
Fig. 3 is the circuit pathways reticulate texture schematic diagram of the first circuit layer of touch-screen shown in Fig. 2;
Fig. 4 is the schematic diagram that in the reticulate texture shown in Fig. 3, arbitrary grid node place is connected/disconnects with memorial alloy node;
The structural drawing of the touch-screen that Fig. 5 provides for embodiment bis-;
Fig. 6 is the circuit pathways reticulate texture schematic diagram of the first circuit layer of touch-screen shown in Fig. 5;
The structural drawing of the touch-screen that Fig. 7 provides for embodiment tri-;
Fig. 8 is the circuit pathways reticulate texture schematic diagram of the first circuit layer of touch-screen shown in Fig. 7;
Fig. 9 is the schematic diagram that in the reticulate texture shown in Fig. 8, arbitrary grid node place is provided with memorial alloy node;
Another structural drawing of the touch-screen that Figure 10 provides for embodiment tri-;
The touch-screen method for making process flow diagram one that Figure 11 provides for the present embodiment;
The touch-screen method for making flowchart 2 that Figure 12 provides for the present embodiment.
Reference numeral: 011-infrabasal plate, 012-lower conductiving layer, 013-cavity, the upper conductive layer of 014-, 015-upper substrate, 016-spacer;
01-first substrate, 02-second substrate, 03-array base palte, the circuit pathways of 11-the first circuit layer, 12-memorial alloy node, the wire that 13-is connected with second circuit layer, 14-via hole, 15-second circuit layer, 16-insulation course.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
First, a kind of special material memorial alloy the present invention being used is introduced.Memorial alloy is that a kind of atomic arrangement is very regular and have a martensite phase transformation alloy.Martensite phase transformation has reversibility, forms the memory effect of memorial alloy.This alloy can produce distortion under external force, when external force is removed, under certain temperature conditions, can return to the original form.
Next, the present embodiment provides a kind of touch-screen, this touch-screen has been used the memory alloy material of above-mentioned introduction, can solve thickness problem and the low problem of light transmission rate that the cavity in resistive touch screen and capacitive touch screen brings, contribute to realize ultrathin and the high light transmission rate of touch-screen.
A kind of touch-screen, comprise the first substrate and second substrate and the touch screen controller that are oppositely arranged, and, between described first substrate and second substrate, be formed with the first circuit layer and second circuit layer, and be formed with the insulation course that is provided with via hole between described the first circuit layer and described second circuit layer;
Described the first circuit layer comprises at least one memorial alloy node, and is the circuit pathways of described at least one memorial alloy node power supply;
Described second circuit layer comprises at least one wire being connected with described touch screen controller, and the corresponding memorial alloy node of every wire, so that described touch screen controller detects the connection status between the conducting state of memorial alloy node described in each or wire that described in each, memorial alloy is corresponding with it.
Wherein, described insulation course is transparent insulation material PVX(silicon nitride) material.
In addition, for the external force on induction touch panel preferably changes, select soft board glass as described first substrate; The present embodiment is for further to reduce the thickness of described touch-screen, using the color membrane substrates in LCDs as second substrate.
The touch-screen that the embodiment of the present invention provides, by at least one memorial alloy node is set, use memorial alloy to produce under external force deformation, while removing external force, can recover the characteristic of original form, the external force at this Nodes changes by induction to make described memorial alloy node, the effect of similar circuit switch and cause change in electric, then connects by circuit the variation of described electric signal is passed to touch screen controller, to realize the detection that described memorial alloy Nodes external force is changed; Because described touch-screen changes and detects separately the external force of memorial alloy node described in each, this has just strengthened the sensitivity of this touch-screen, and is also easy to realize the multi-point touch to this touch-screen; Compared with prior art, in the touch-screen that the embodiment of the present invention provides, with the insulation course that is provided with via hole, replace the cavity in resistive touch screen and capacitive touch screen, because the relatively described cavity ratio of described insulation course is thinner, so contribute to realize the ultrathin of touch-screen, solved the lower problem of light transmission rate that described cavity causes simultaneously.
Below, in connection with accompanying drawing, introduce the design proposal of several concrete touch-screens.
Embodiment mono-:
As shown in Figure 2, the touch-screen that the present embodiment provides, comprise the first substrate 01 and second substrate 02 and the touch screen controller that are oppositely arranged, and, between described first substrate 01 and second substrate 02, be formed with the first circuit layer and second circuit layer 15, and be formed with insulation course 16 between described the first circuit layer and described second circuit layer 15;
Described the first circuit layer is for responding to the touch of external force, and described second circuit layer passes to touch screen controller for the signal that whether has external force to touch touch point;
Described the first circuit layer comprises at least one memorial alloy node 12, and is the circuit pathways 11 of described at least one memorial alloy node 12 power supply; In order more clearly to represent the annexation of described the first circuit layer and described second circuit layer 15, in diagram, only the circuit with a memorial alloy node 12 is connected to example, but in actual applications, according to actual needs the requirement of touch-screen precision is arranged the number of memorial alloy node, the circuit of each set memorial alloy node connect all with illustrate in the circuit of memorial alloy node 12 be connected similar;
Described second circuit layer 15 comprises at least one wire being connected with described touch screen controller, and the corresponding memorial alloy node 12 of every wire, so that described touch screen controller detects the conducting state of memorial alloy node 12 described in each.
Wherein, for the external force of responding to preferably on touch-screen changes, select soft board glass as described first substrate 01; For strengthening the transmittance of touch-screen, described insulation course 16 is transparent insulation material PVX(silicon nitride) material, the circuit pathways in described the first circuit layer and described second circuit layer 15 adopt ITO(indium tin oxide) material; For further reducing the thickness of described touch-screen, the present embodiment is using the color membrane substrates in LCDs as second substrate 02; In described second substrate 02 and array base palte 03, be filled with liquid crystal, form liquid crystal cell.
As a concrete embodiment, as shown in Figure 3 in the present embodiment, described the first circuit layer comprises described circuit pathways 11 and the wire 13 that connects second circuit layer, described circuit pathways 11 be reticulate texture and between the line end at each grid node place for example, without (connecting, between 4 line ends of cancellated each Nodes in Fig. 3 all without connecting), one end of described wire 13 is with the line end at grid node place all without being connected, and the other end is connected with described second circuit layer 15 by via hole 14; Wherein, described in be cancellated circuit pathways 11 and at each grid node place, have at least two line ends, and between all line ends at this grid node place all without connection; In addition, in described via hole 14, be formed with ITO, play the effect of electric connection.
Fig. 4 is the circuit diagram at one of them the grid node place in Fig. 3, as shown in Figure 4, at described each grid node place, is provided with a memorial alloy node 12, and described memorial alloy node 12 is installed on described first substrate 01.While not applying external force on touch-screen, described memorial alloy node 12 is in swelling state, described memorial alloy node 12 couples together all line ends at described grid node place, this memorial alloy node 12 is in conducting state, and the wire 13 that now connects second circuit layer passes to touch screen controller by the electric signal on this memorial alloy node 12 by second circuit layer 15; When touching touch-screen with hand or other objects, when certain of described touch-screen is applied with external force on a bit, described memorial alloy node 12 corresponding to this touch points is in contraction state, described memorial alloy node 12 is contactless with the line end at described grid node place, this memorial alloy node is in off-state, the wire 13 that now connects second circuit layer is also contactless with this memorial alloy node 12, also just there is no electrical signal transfer to touch screen controller; Described touch screen controller by receive each described in memorial alloy node 12 correspondences whether have the situation of electric signal, can judge at this memorial alloy Nodes whether have artificial instruction.
The touch-screen that the embodiment of the present invention provides, by at least one memorial alloy node is set, use memorial alloy to produce under external force deformation, while removing external force, can recover the characteristic of original form, the external force at this Nodes changes by induction to make described memorial alloy node, the effect of similar circuit switch and cause change in electric, then connects by circuit the variation of described electric signal is passed to touch screen controller, to realize the detection that described memorial alloy Nodes external force is changed; Because described touch-screen changes and detects separately the external force of memorial alloy node described in each, this has just strengthened the sensitivity of this touch-screen, and is also easy to realize the multi-point touch to this touch-screen; Compared with prior art, in the touch-screen that the embodiment of the present invention provides, with the insulation course that is provided with via hole, replace the cavity in resistive touch screen and capacitive touch screen, because the relatively described cavity ratio of described insulation course is thinner, so contribute to realize the ultrathin of touch-screen, solved the lower problem of light transmission rate that described cavity causes simultaneously.
Embodiment bis-:
As shown in Figure 5, the touch-screen that the present embodiment provides provides another implementation for the circuit design of the first circuit layer and second circuit layer, and the implementation of other design and implementation examples one is similar, does not repeat them here.
In the present embodiment, the circuit pathways in the first circuit layer is the reticulate texture shown in Fig. 6, and nothing connects between the line end at each grid node place.At described each grid node place, be provided with a memorial alloy node 12, described memorial alloy node 12 is installed on described first substrate 01.Between described the first circuit layer and second circuit layer 15, be provided with insulation course 16, and on described insulation course 16, be provided with the via hole 14 that is filled with ITO, described via hole 14 be located at described memorial alloy node 12 under and keep in touch with this memorial alloy node 12, and and all line ends at described grid node place between all without being electrically connected.
As shown in Figure 5, while not applying external force on touch-screen, described memorial alloy node 12 is in swelling state, described memorial alloy node 12 couples together all line ends at described grid node place, this memorial alloy node 12 is in conducting state, the via hole 14 that is now formed with ITO by the electric signal on this memorial alloy node 12 by second circuit layer 15 with it corresponding wire pass to touch screen controller; When touching touch-screen with hand or other objects, when certain of described touch-screen is applied with external force on a bit, at memorial alloy node 12 corresponding to this touch points in contraction state, described memorial alloy node 12 is contactless with the line end at described grid node place, this memorial alloy node 12, in off-state, does not now have electrical signal transfer to touch screen controller; Described touch screen controller by receive each described in memorial alloy node 12 correspondences whether have the situation of electric signal, can judge at this memorial alloy Nodes whether have artificial instruction.
The touch-screen that the present embodiment provides provides another design proposal for the circuit of the first circuit layer and second circuit layer, described touch-screen changes and detects separately the external force on each memorial alloy node, this has just strengthened the sensitivity of this touch-screen, and is also easy to realize the multi-point touch to this touch-screen; Compared with prior art, in the touch-screen that the embodiment of the present invention provides, with the insulation course that is provided with via hole, replace the cavity in resistive touch screen and capacitive touch screen, because the relatively described cavity ratio of described insulation course is thinner, so contribute to realize the ultrathin of touch-screen, solved the lower problem of light transmission rate that described cavity causes simultaneously.
Embodiment tri-:
As shown in Figure 7, the touch-screen that the present embodiment provides, comprise the first substrate 01 and second substrate 02 and the touch screen controller that are oppositely arranged, and, between described first substrate 01 and second substrate 02, be formed with the first circuit layer and second circuit layer 15, and be formed with insulation course 16 between described the first circuit layer and described second circuit layer 15;
Described the first circuit layer comprises at least one memorial alloy node 12, and is the circuit pathways 11 of described at least one memorial alloy node 12 power supply; Described second circuit layer 15 comprises at least one wire being connected with described touch screen controller, and the corresponding memorial alloy node 12 of every wire, so that described touch screen controller detects the connection status between the wire that memorial alloy 12 is corresponding with it described in each.
Wherein, for the external force of responding to preferably on touch-screen changes, select soft board glass as described first substrate 01; For strengthening the transmittance of touch-screen, described insulation course 16 is transparent insulation material PVX(silicon nitride) material, the circuit pathways in described the first circuit layer and described second circuit layer 15 adopt ITO(indium tin oxide) material; For further reducing the thickness of described touch-screen, the present embodiment is using the color membrane substrates in LCDs as second substrate 02; In described second substrate 02 and array base palte 03, be filled with liquid crystal.
In addition, the circuit pathways 11 of described the first circuit layer is arranged on described first substrate 01, and is provided with at least one memorial alloy node 12 in described circuit pathways 11; On the insulation course between described memorial alloy node 12 and described second circuit layer 15, be provided with via hole 14, this via hole 14 is hollow.
In this specific embodiment, described circuit pathways 11 is the reticulate texture shown in Fig. 8, and each grid node place is communicated with.For the structure at each grid node place, as shown in Figure 9, at each grid node place of netted circuit pathways 11, all set firmly a memorial alloy node 12.When touch-screen is worked, described circuit pathways 11 is given described memorial alloy node power supply, if touch-screen is not subject to external force, described memorial alloy node 12 is in contraction state, this memorial alloy node 12 does not contact with second circuit layer 15, now described memorial alloy node, with its wire corresponding in second circuit layer 15 in off-state, does not have electrical signal transfer to touch screen controller; If touch-screen is applied to external force, there is deformation in the memorial alloy node 12 of touching place, in swelling state, this memorial alloy node 12 contacts and forms electric connection being contained in described via hole 14 and with its wire corresponding on second circuit layer 15, now has electrical signal transfer to touch screen controller; When removing external force, memorial alloy reverts to contraction state again.
Described touch screen controller by receive each described in memorial alloy node 12 correspondences whether have the situation of electric signal, can judge at this memorial alloy Nodes whether have artificial instruction.
In addition, structure for the circuit pathways of described the first circuit layer is not unique, can be according to actual needs, as long as described circuit pathways can complete the power supply to described memorial alloy node when touch-screen is worked, this circuit pathways is exactly applicable in theory.For example, described circuit pathways can also be the banded structure of parallel arrangement, and described at least one memorial alloy node is evenly distributed in the circuit pathways of described band shape.
In order to make the structure of touch-screen, further simplify, as shown in figure 10, the circuit pathways 11 of described the first circuit layer is memory alloy material, now described memorial alloy node as a part for described circuit pathways, therefore without separately establish memorial alloy node on described path.
Because the circuit design of the first circuit layer and second circuit layer is not unique, the touch-screen that the present embodiment provides provides another design proposal for the circuit of the first circuit layer and second circuit layer, described touch-screen changes and detects separately the external force on each memorial alloy node, this has just strengthened the sensitivity of this touch-screen, and is also easy to realize the multi-point touch to this touch-screen; Compared with prior art, in the touch-screen that the embodiment of the present invention provides, with the insulation course that is provided with via hole, replace the cavity in resistive touch screen and capacitive touch screen, because the relatively described cavity ratio of described insulation course is thinner, so contribute to realize the ultrathin of touch-screen, solved the lower problem of light transmission rate that described cavity causes simultaneously.
Above-mentioned is the description of the touch screen structure design proposal that provides about the embodiment of the present invention, will specifically introduce the method for making of described touch-screen below.
As shown in figure 11, a kind of method for making of touch-screen, comprises the following steps:
Step a1, on first substrate, form at least one memorial alloy node;
Step a2, on second substrate, form circuit pathways layer and second circuit layer, between described circuit pathways layer and second circuit layer, be formed with insulation course, and be provided with via hole at described insulation course;
Step a3, by described first substrate and second substrate to box, and the memorial alloy node on described first substrate after box and the circuit pathways layer on described second substrate are joined and form the first circuit layer, and this first circuit layer is connected by described via hole with described second circuit layer;
Step a4, described second circuit layer is connected to the touch screen controller of described touch-screen.
The touch-screen method for making that the present embodiment provides, use existing manufacture craft, just can complete the design of above-mentioned touch-screen, described touch-screen changes and detects separately the external force of memorial alloy node described in each, this has just strengthened the sensitivity of this touch-screen, and is also easy to realize the multi-point touch to this touch-screen; And, with the insulation course that is provided with via hole, replace the cavity in resistive touch screen and capacitive touch screen, because the relatively described cavity ratio of described insulation course is thinner, so contribute to realize the ultrathin of touch-screen, solved the lower problem of light transmission rate that described cavity causes simultaneously.
Embodiment tetra-:
The present embodiment provides its method for making for the touch-screen in embodiment mono-and embodiment bis-, below in conjunction with the touch-screen shown in Fig. 2, introduces the method for making of this touch-screen, specifically comprises the following steps:
Step a1, on first substrate 01, form at least one memorial alloy node 12;
Step a2, on second substrate 02, form circuit pathways layer and second circuit layer, between described circuit pathways layer and second circuit layer, be formed with insulation course, and be provided with via hole at described insulation course; Specifically comprise the following steps:
A21, on described second substrate 02, deposit the 2nd ITO layer, and form described second circuit layer 15 by mask lithography technique; This second circuit layer 15 comprises at least one wire, and every corresponding described memorial alloy node 12 of wire;
A22, on described second substrate 02, deposit the second insulation course to cover described second circuit layer 15, and form with described at least one wire and distinguish at least one corresponding via hole 14 in described the second insulation course etching;
A23, on described second substrate 02, deposit an ITO layer, and form described circuit pathways layer by mask lithography technique; In this specific embodiment, described circuit pathways layer comprises the wire 13 that is cancellated circuit 11 and is connected with described second circuit layer shown in Fig. 3, and nothing connects between the line end at each grid node place;
A24, on described second substrate 02, deposit the first insulation course, and on described second substrate 02, described the first insulation course of part is got rid of in the region development corresponding with described memorial alloy node 12, exposes the part contacting with described memorial alloy node 12 in described circuit pathways.
Step a3, by described first substrate 01 and 02 pair of box of second substrate, and the memorial alloy node 12 on described first substrate 01 after box and circuit pathways layer on described second substrate 01 are joined and form the first circuit layer, and this first circuit layer is connected by described via hole 14 with described second circuit layer 15;
Step a4, described second circuit layer is connected to the touch screen controller of described touch-screen.
The touch-screen method for making that the present embodiment provides, use existing manufacture craft, just can complete the design of above-mentioned touch-screen, described touch-screen changes and detects separately the external force of memorial alloy node described in each, this has just strengthened the sensitivity of this touch-screen, and is also easy to realize the multi-point touch to this touch-screen; And, with the insulation course that is provided with via hole, replace the cavity in resistive touch screen and capacitive touch screen, because the relatively described cavity ratio of described insulation course is thinner, so contribute to realize the ultrathin of touch-screen, solved the lower problem of light transmission rate that described cavity causes simultaneously.
According to the difference of the circuit structure of the first circuit layer in touch-screen and second circuit layer, need to adopt different touch-screen method for makings, another kind of touch-screen method for making will be provided below, as shown in figure 12, specifically comprise the following steps:
Step b1, on first substrate, form the circuit pathways of the first circuit layer, and at least one memorial alloy node is evenly set in described circuit pathways;
Step b2, on second substrate, form second circuit layer, and form insulation course on described second substrate, and described insulation course is provided with via hole;
Step b3, by described first substrate and second substrate to box, and can be connected by described via hole with the second circuit layer on described second substrate the memorial alloy node on described first substrate after box;
Step b4, described second circuit layer is connected to the touch screen controller of described touch-screen.
The touch-screen method for making that the present embodiment provides, use existing manufacture craft, just can complete the design of above-mentioned touch-screen, described touch-screen changes and detects separately the external force of memorial alloy node described in each, this has just strengthened the sensitivity of this touch-screen, and is also easy to realize the multi-point touch to this touch-screen; And, with the insulation course that is provided with via hole, replace the cavity in resistive touch screen and capacitive touch screen, because the relatively described cavity ratio of described insulation course is thinner, so contribute to realize the ultrathin of touch-screen, solved the lower problem of light transmission rate that described cavity causes simultaneously.
Embodiment five:
By the touch-screen in embodiment tri-, provide its method for making below, in conjunction with Fig. 7, its method for making described in detail, specifically comprise the following steps:
Step b1, on first substrate 01, form the circuit pathways 11 of the first circuit layer, and at least one memorial alloy node 12 is evenly set in described circuit pathways 11;
Described circuit pathways 11 can be reticulate texture, and described at least one memorial alloy node 12 is placed in the grid node place of described cancellated circuit pathways 11, also can be the banded structure of parallel arrangement, and described at least one memorial alloy node 12 is evenly distributed in the circuit pathways 11 of described banded structure;
B11, on first substrate 01, deposit an ITO layer, and by mask lithography technique, form the circuit pathways 11 of described the first circuit layer;
Or, the circuit pathways 11 of described the first circuit layer that formation is made by memory alloy material on first substrate 01; The forming process of the circuit pathways 11 of described described the first circuit layer of being made by memory alloy material can be: first on first substrate 01, form memory alloy layer, then by mask lithography technique, make the circuit pathways 11 of described the first circuit layer;
If the circuit pathways 11 of the first circuit layer is ITO material in b12 step b11, at least one memorial alloy node 12 is evenly set in described circuit pathways 11;
Step b2, on second substrate 02, form second circuit layer 15, and form insulation course 16 on described second substrate 02, and described insulation course 16 is provided with via hole 14;
B21, on described second substrate 02, deposit the 2nd ITO layer, and form described second circuit layer 15 by mask lithography technique; This second circuit layer 15 comprises at least one wire, and every corresponding described memorial alloy node 12 of wire;
B22, on described second substrate 02, depositing insulating layer 16, to cover described second circuit layer 15, and forms with described at least one wire and distinguishes at least one corresponding via hole 14 in described insulation course 16 etchings; Described memorial alloy node 12 after expansion can be placed in this via hole and contact by this via hole wire corresponding with it, be that after described memorial alloy node 12 expands, wire that can be corresponding with this memorial alloy node in second circuit layer 15 by the via hole 14 of hollow forms and is electrically connected.
Step b3, by described first substrate 01 and 02 pair of box of second substrate, and can be connected by described via hole 14 with the second circuit layer 15 on described second substrate 02 the memorial alloy node 12 on described first substrate after box;
Step b4, described second circuit layer 15 is connected to the touch screen controller of described touch-screen.
The touch-screen method for making that the present embodiment provides, use existing manufacture craft, just can complete the design of above-mentioned touch-screen, described touch-screen changes and detects separately the external force of memorial alloy node described in each, this has just strengthened the sensitivity of this touch-screen, and is also easy to realize the multi-point touch to this touch-screen; And, with the insulation course that is provided with via hole, replace the cavity in resistive touch screen and capacitive touch screen, because the relatively described cavity ratio of described insulation course is thinner, so contribute to realize the ultrathin of touch-screen, solved the lower problem of light transmission rate that described cavity causes simultaneously.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion by the described protection domain with claim.
Claims (17)
1. a touch-screen, comprise the first substrate and second substrate and the touch screen controller that are oppositely arranged, it is characterized in that, between described first substrate and second substrate, be formed with the first circuit layer and second circuit layer, and be formed with the insulation course that is provided with via hole between described the first circuit layer and described second circuit layer;
Described the first circuit layer comprises at least one memorial alloy node, and is the circuit pathways of described at least one memorial alloy node power supply;
Described second circuit layer comprises at least one wire being connected with described touch screen controller, and the corresponding memorial alloy node of every wire, so that described touch screen controller detects the connection status between the conducting state of memorial alloy node described in each or wire that described in each, memorial alloy is corresponding with it.
2. touch-screen according to claim 1, is characterized in that, the circuit pathways in described the first circuit layer is reticulate texture, and nothing connects between the line end at each grid node place, and is provided with a memorial alloy node at described each grid node place;
At described memorial alloy node, during in swelling state, described memorial alloy node couples together at least two line ends at described grid node place, and this memorial alloy node is in conducting state;
At described memorial alloy node, during in contraction state, the line end at described memorial alloy node and described grid node place is contactless, and this memorial alloy node is in off-state.
3. touch-screen according to claim 2, is characterized in that, described memorial alloy node is installed on described first substrate.
4. touch-screen according to claim 2, is characterized in that, on described insulation course, is formed with via hole, and described via hole is in order to connect described the first circuit layer and described second circuit layer.
5. touch-screen according to claim 2, is characterized in that, the circuit pathways in described the first circuit layer and described second circuit layer adopt indium tin oxide ITO material.
6. touch-screen according to claim 1, is characterized in that, the circuit pathways of described the first circuit layer is arranged on described first substrate, and in described circuit pathways, is provided with at least one memorial alloy node; On the insulation course between described memorial alloy node and described second circuit layer, be provided with via hole;
At described memorial alloy node, during in swelling state, the wire that described memorial alloy node is corresponding with it connects by described via hole;
At described memorial alloy node during in contraction state, the described memorial alloy node wire corresponding with it is in off-state.
7. touch-screen according to claim 6, is characterized in that, described circuit pathways is reticulate texture, and described at least one memorial alloy node is placed in the grid node place of described netted circuit pathways.
8. touch-screen according to claim 6, is characterized in that, described circuit pathways is the banded structure of parallel arrangement, and described at least one memorial alloy node is evenly distributed in the circuit pathways of described band shape.
9. according to the touch-screen described in claim 7 or 8, it is characterized in that, the circuit pathways in described the first circuit layer adopts memory alloy material or ITO, and described second circuit layer adopts ITO.
10. a method for making for touch-screen, is characterized in that, comprises the following steps:
Step a1, on first substrate, form at least one memorial alloy node;
Step a2, on second substrate, form circuit pathways layer and second circuit layer, between described circuit pathways layer and second circuit layer, be formed with insulation course, and be provided with via hole at described insulation course;
Step a3, by described first substrate and second substrate to box, and the memorial alloy node on described first substrate after box and the circuit pathways layer on described second substrate are joined and form the first circuit layer, and this first circuit layer is connected by described via hole with described second circuit layer;
Step a4, described second circuit layer is connected to the touch screen controller of described touch-screen.
11. touch-screen method for makings according to claim 10, is characterized in that, described step a2 specifically comprises:
Step a21, on described second substrate, deposit the 2nd ITO layer, and form described second circuit layer by mask lithography technique; This second circuit layer comprises at least one wire, and every corresponding described memorial alloy node of wire;
Step a22, on described second substrate, deposit the second insulation course to cover described second circuit layer, and form with described at least one wire and distinguish at least one corresponding via hole in described the second insulation course etching;
Step a23, on described second substrate, deposit an ITO layer, and form described circuit pathways layer by mask lithography technique;
Step a24, on described second substrate, deposit the first insulation course, and on described second substrate, described the first insulation course of part is got rid of in the region development corresponding with described memorial alloy node, exposes the part contacting with described memorial alloy node in described circuit pathways layer.
12. touch-screen method for makings according to claim 10, is characterized in that, the circuit pathways layer in described the first circuit layer is reticulate texture, and nothing connects between the line end at each grid node place.
The method for making of 13. 1 kinds of touch-screens, is characterized in that, comprises the following steps:
Step b1, on first substrate, form the circuit pathways of the first circuit layer, and at least one memorial alloy node is evenly set in described circuit pathways;
Step b2, on second substrate, form second circuit layer, and form insulation course on described second substrate, and described insulation course is provided with via hole;
Step b3, by described first substrate and second substrate to box, and can be connected by described via hole with the second circuit layer on described second substrate the memorial alloy node on described first substrate after box;
Step b4, described second circuit layer is connected to the touch screen controller of described touch-screen.
14. touch-screen method for makings according to claim 13, is characterized in that, described step b1 specifically comprises:
Step b11, on first substrate, deposit an ITO layer, and by mask lithography technique, form the circuit pathways of described the first circuit layer;
Or, the circuit pathways of described the first circuit layer that formation is made by memory alloy material on first substrate;
If the circuit pathways of the first circuit layer is ITO material in step b12 step b11, at least one memorial alloy node is evenly set in described circuit pathways;
If the circuit pathways of the first circuit layer is memory alloy material in step b11, described memorial alloy node is as a part for described circuit pathways, therefore without separately establish memorial alloy node on described path.
15. touch-screen method for makings according to claim 13, is characterized in that, described step b2 specifically comprises:
Step b21, on described second substrate, deposit the 2nd ITO layer, and form described second circuit layer by mask lithography technique; This second circuit layer comprises at least one wire, and every corresponding described memorial alloy node of wire;
Step b22, on described second substrate, depositing insulating layer, to cover described second circuit layer, and forms with described at least one wire and distinguishes at least one corresponding via hole in described insulation course etching; Described memorial alloy node after expansion can be placed in this via hole and contact by this via hole wire corresponding with it.
16. touch-screen method for makings according to claim 13, is characterized in that, described circuit pathways is reticulate texture, and described at least one memorial alloy node is placed in the grid node place of described cancellated circuit pathways.
17. touch-screen method for makings according to claim 13, is characterized in that, described circuit pathways is the banded structure of parallel arrangement, and described at least one memorial alloy node is evenly distributed in the circuit pathways of described banded structure.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010531988.6A CN102467268B (en) | 2010-10-29 | 2010-10-29 | Touch screen and manufacture method thereof |
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| CN201010531988.6A CN102467268B (en) | 2010-10-29 | 2010-10-29 | Touch screen and manufacture method thereof |
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| CN102467268B true CN102467268B (en) | 2014-02-19 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101685212A (en) * | 2008-09-26 | 2010-03-31 | 群康科技(深圳)有限公司 | Liquid crystal display panel |
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| US8217903B2 (en) * | 2007-11-02 | 2012-07-10 | Research In Motion Limited | Electronic device and tactile touch screen |
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| CN101685212A (en) * | 2008-09-26 | 2010-03-31 | 群康科技(深圳)有限公司 | Liquid crystal display panel |
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