CN102464486A - Preparation method of 99.6% aluminum oxide ceramic film substrate - Google Patents

Preparation method of 99.6% aluminum oxide ceramic film substrate Download PDF

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Publication number
CN102464486A
CN102464486A CN2010105502311A CN201010550231A CN102464486A CN 102464486 A CN102464486 A CN 102464486A CN 2010105502311 A CN2010105502311 A CN 2010105502311A CN 201010550231 A CN201010550231 A CN 201010550231A CN 102464486 A CN102464486 A CN 102464486A
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China
Prior art keywords
glass
slurry
substrate
alumina
preparation
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CN2010105502311A
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Chinese (zh)
Inventor
陈凤宇
朴元日
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Shanghai Hengnai Ceramic Tech Ltd
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Shanghai Hengnai Ceramic Tech Ltd
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Priority to CN2010105502311A priority Critical patent/CN102464486A/en
Publication of CN102464486A publication Critical patent/CN102464486A/en
Pending legal-status Critical Current

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Abstract

The invention relates to a preparation method of a 99.6% aluminum oxide ceramic film substrate. The raw material consists of 99.99 percent of aluminum oxide powder, 1.8 to 2.5 percent of magnesium oxide and 0.2 percent of silicon dioxide; and the 99.6% aluminum oxide ceramic film substrate, as a finished product, of which the thickness is less than or equal to 0.1mm is obtained by sizing agent preparation, gel calendering molding, sintering and polishing.

Description

The preparation method of 99.6% alumina-ceramic film substrate
Technical field
The present invention relates to a kind of preparation method of ceramic substrate, especially a kind of preparation method of 99.6% alumina ceramic substrate.
Background technology
The PCB circuit, promptly printed circuit board is claimed printed substrate again, is the provider that electronic devices and components are electrically connected.The history in existing more than 100 year of its development; Its design mainly is a layout design; The major advantage that adopts circuit card is the mistake that significantly reduces wiring and assembling, has improved automatization level and productive labor rate.Yet; Development along with electronic circuit technology; Original PCB circuit card can not satisfy the requirement of industry development; Various countries begin one's study and seek new material and replace macromolecular material to do the base material of circuit card thereupon, and 96% alumina ceramic substrate of lower cost had obtained using widely afterwards, and there are the KYOCERA of Japan, the CoorsTek of the U.S., the Sai Lang Tyke of Germany in 96% bigger ceramic substrate production firm at present.Domestic have wide East 3rd Ring Road group and a Guangdong section of Tsing-Hua University.
And more better 99.6% alumina-ceramic than 96% Alumina Ceramics, there is not manufacturers produce in China always yet.And produce 0.1mm and following ultrafine substrate technical barrier especially.The technical difficulty of 99.6% alumina ceramic substrate production is that raw-material configuration, moulding, sintering and mill process several aspects.The prescription of 96% alumina ceramic substrate generally all adopts the alumina raw material of 99.9% purity, is equipped with silicon-dioxide, Suzhou soil and lime carbonate, reduces firing temperature, satisfies the plasticity-slurry requirement that casting molding processes requires.Material purity that can 99.6% alumina ceramic substrate is high; Traditional starting material can't meet the demands; Even guaranteed the purity of alumina ceramic substrate, traditional casting method and casting can't be realized the moulding and the sintering process of the ceramic substrate of 0.1mm and following thickness.These technical barriers are that a lot of enterprises can't capture for many years.
Summary of the invention
In order to address the above problem, the present invention adopts the principle of organic chemistry monomer polymerization reactions, realizes forming process of ceramics (quoting the research situ-gel injection molding of U.S.'s Oak Ridge National Laboratory).Its technical scheme is following:
Raw material is that weight ratio is 99.99% alumina powder, the Natural manganese dioxide of 1.8-2.5% and 0.2% silicon-dioxide, and wherein Natural manganese dioxide and silicon-dioxide are as sintering agent.
Concrete preparation method is following:
1) preparation slurry: organic monomer acrylic amide and linking agent N-N methylene radical acrylic amide are mixed with deionized water according to 1.8: 100 mass ratio with the optimum proportion of 15: 1 (mass ratio) and the raw material that configures again; The slurry that is modulated into suitable moulding is (with the 4 glasss of tested viscosity that are coated with of 100ml; The viscosity number that is fit to is 25-45 second), do vacuumizing the de-bubble processing again;
2) gel calendering formation: adopt the thick float glass (length and width 340mmx430mm, this glass is smooth smooth) of 10mm, glass is cleaned oven dry back horizontal positioned, and 4 jiaos go out to place the 10mmx10mm size on glass, organic plate of thickness 0.1mm; Take by weighing a certain amount of slurry that configures then; Drip 0.1% catalyzer (persulphate of 10% concentration) (all being mass ratio) stir be poured on glass; Press the same glass of lastblock in the level more on glass that is placed with ceramic size again, after 10 minutes just at 2 sheet glass intermediate formation the gel ceramic substrate of 1 thickness 0.1mm.This substrate is taken down level gently be placed on the 300 purpose silk screens, just obtained the ultra-thin 99.6% ceramic substrate blank wanted after drying, more than operation is all in 100,000 Clean room completion.
3) sintering: sintering in the kiln of 1800 degree.
4) polishing processing: adopt sticker that substrate is bonded on the thick alumina ceramic plate of 5mm, go up shredder again and grind the 99.6% alumina-ceramic film substrate finished product that obtains 0.1mm and following thickness.
Embodiment
Embodiment 1
Organic monomer acrylic amide and linking agent N-N methylene radical acrylic amide are mixed with deionized water according to 1.8: 100 mass ratio with the optimum proportion of 15: 1 (mass ratio) and the raw material that configures again; The slurry that is modulated into suitable moulding is (with the 4 glasss of tested viscosity that are coated with of 100ml; The viscosity number that is fit to is 25-45 second), do vacuumizing the de-bubble processing again; Adopt the thick float glass of 10mm (length and width 340mmx430mm, this glass is smooth smooth) then, glass is cleaned oven dry back horizontal positioned, and 4 jiaos go out to place the 10mmx10mm size on glass, organic plate of thickness 0.1mm; Take by weighing a certain amount of slurry that configures then; Drip 0.1% catalyzer (persulphate of 10% concentration) (all being mass ratio) stir be poured on glass; Press the same glass of lastblock in the level more on glass that is placed with ceramic size again, after 10 minutes just at 2 sheet glass intermediate formation the gel ceramic substrate of 1 thickness 0.1mm.This substrate is taken down level gently be placed on the 300 purpose silk screens, just obtained the ultra-thin 99.6% ceramic substrate blank wanted after drying, more than operation is all in 100,000 Clean room completion.At last, sintering in the kiln of 1800 degree, and adopt sticker that substrate is bonded on the thick alumina ceramic plate of 5mm, go up the 99.6% alumina-ceramic film substrate that the processing of shredder grinding and polishing obtains 0.1mm and following thickness again.

Claims (1)

1. the preparation method of an alumina-ceramic film substrate, raw material is that weight ratio is 99.99% alumina powder, the Natural manganese dioxide of 1.8-2.5% and 0.2% silicon-dioxide, concrete steps are following:
1) preparation slurry: organic monomer acrylic amide and linking agent N-N methylene radical acrylic amide are mixed with deionized water according to 1.8: 100 mass ratio with 15: 1 optimum proportion of mass ratio and the raw material that configures again; Be modulated into the slurry that is fit to moulding; This slurry with 100ml is coated with 4 glasss of tested viscosity; The viscosity number that is fit to the slurry of moulding is 25-45 second, does to vacuumize the de-bubble processing again;
2) gel calendering formation: adopting length and width is the thick float glass of 10mm of 340mmx430mm, and glass is cleaned oven dry back horizontal positioned, and 4 jiaos go out to place the 10mmx10mm size on glass, organic plate of thickness 0.1mm; Take by weighing a certain amount of slurry that configures then; The catalyzer of persulphate that drips the 10wt% concentration of 0.1wt% stir be poured on glass; Press the same glass of lastblock in the level more on glass that is placed with ceramic size again, after 10 minutes just at 2 sheet glass intermediate formation the gel ceramic substrate of 1 thickness 0.1mm; This substrate level is placed on the 300 purpose silk screens, obtains the ultra-thin 99.6% ceramic substrate blank of 0.1mm and following thickness after drying;
3) sintering: sintering in the kiln of 1800 degree;
4) polishing processing: adopt sticker that substrate is bonded on the thick alumina ceramic plate of 5mm, go up shredder again and grind the 99.6% alumina ceramic substrate finished product that obtains 0.1mm and following thickness.
CN2010105502311A 2010-11-18 2010-11-18 Preparation method of 99.6% aluminum oxide ceramic film substrate Pending CN102464486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010105502311A CN102464486A (en) 2010-11-18 2010-11-18 Preparation method of 99.6% aluminum oxide ceramic film substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010105502311A CN102464486A (en) 2010-11-18 2010-11-18 Preparation method of 99.6% aluminum oxide ceramic film substrate

Publications (1)

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CN102464486A true CN102464486A (en) 2012-05-23

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106986665A (en) * 2017-05-03 2017-07-28 中国振华集团云科电子有限公司 99.6% Al of thin film integrated circuit2O3The preparation method of ceramic substrate
CN107130228A (en) * 2017-04-24 2017-09-05 美的集团股份有限公司 Alundum (Al2O3) film and preparation method thereof
CN107973615A (en) * 2016-10-24 2018-05-01 天津工业大学 A kind of mesoporous γ-Al2O3Ceramic membrane and preparation method thereof
CN115403363A (en) * 2021-05-26 2022-11-29 宜兴鑫程锋新材料有限公司 Preparation process of aluminum oxide ceramic wafer for radiator

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107973615A (en) * 2016-10-24 2018-05-01 天津工业大学 A kind of mesoporous γ-Al2O3Ceramic membrane and preparation method thereof
CN107973615B (en) * 2016-10-24 2020-12-18 天津工业大学 Mesoporous gamma-Al2O3Ceramic membrane and preparation method thereof
CN107130228A (en) * 2017-04-24 2017-09-05 美的集团股份有限公司 Alundum (Al2O3) film and preparation method thereof
CN107130228B (en) * 2017-04-24 2019-07-02 美的集团股份有限公司 Aluminum oxide film and preparation method thereof
CN106986665A (en) * 2017-05-03 2017-07-28 中国振华集团云科电子有限公司 99.6% Al of thin film integrated circuit2O3The preparation method of ceramic substrate
CN106986665B (en) * 2017-05-03 2020-04-28 中国振华集团云科电子有限公司 Preparation method of 99.6% Al2O3 ceramic substrate for thin film integrated circuit
CN115403363A (en) * 2021-05-26 2022-11-29 宜兴鑫程锋新材料有限公司 Preparation process of aluminum oxide ceramic wafer for radiator

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Application publication date: 20120523