CN102456769A - Semiconductor element and method for increasing effective operation area thereof - Google Patents
Semiconductor element and method for increasing effective operation area thereof Download PDFInfo
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- CN102456769A CN102456769A CN2010105286473A CN201010528647A CN102456769A CN 102456769 A CN102456769 A CN 102456769A CN 2010105286473 A CN2010105286473 A CN 2010105286473A CN 201010528647 A CN201010528647 A CN 201010528647A CN 102456769 A CN102456769 A CN 102456769A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The invention relates to a semiconductor element and a method for increasing the effective operation area thereof. The method for increasing the effective operation area of the semiconductor element comprises the following steps: depositing a first conductive layer on a base plate; scratching a plurality of first scores on the first conductive layer through laser, wherein the first scores are scratched to the bottom surface of the first conductive layer; depositing at least a conductor material layer on the first conductive layer and in the plurality of first scores; scratching a plurality of second scores on the semiconductor material layer through laser, wherein the second scores are scratched to the bottom surface of the semiconductor material layer, and each second score consists of a plurality of second holes; depositing a second conductive layer on the semiconductor material and in the plurality of first scores and the plurality of second scores; scratching a plurality of third scores on the second conductive layer through laser, wherein the third scores are scratched to the bottom surface of the semiconductor material layer; and the second holes are narrowed, to reduce the distance between the first scores and the second scores as well as the distance between the third scores and the second scores.
Description
Technical field
The present invention relates to a kind of semiconductor element manufacture method, relate in particular to a kind of increase semiconductor element and effectively operate Method for Area and semiconductor element.
Background technology
Now, the manufacturing approach of semiconductor element (the act thin-film solar cells is an example) is a plurality of retes of deposition on substrate, to form the film photoelectric element.This film photoelectric element comprises the semiconductor material thin film and second conductive layer that first conductive layer, multilayer can absorb luminous energy and be converted into electric energy, and stands repeatedly laser grooving and scribing, to form the module of a plurality of batteries series connection.The maximizes power of desiring to make semiconductor element effectively operate area and being produced importantly makes laser grooving and scribing cause no the area of help to reduce to minimum for producing power.So, when carrying out laser grooving and scribing, must let every line closer to each other as much as possible.But, also must keep suitable error distance between line and line, to avoid the problem overlapping or the generation leakage current of ruling.
TaiWan, China letters patent book number 167815 " photovoltaic module of partially transparent "; It has disclosed and has used laser to remove the back electrode of part solar cell at least and make the method for solar cell as partially transparent; Wherein the width of every line is about 0.01 to 0.5mm, and line is approximately 0.5 to 5mm with distance between ruling.
Chinese patent publication number CN101567303 " laser film-engraving equipment and scribble method and with the amorphous silicon film photovoltaic panel of its manufacturing "; It has disclosed the amorphous silicon thin-film solar electro-optical package of carving film device and scribble method manufacturing by the specific laser that adopts this invention, and makes laser grooving and scribing cause not have the area of help to reduce to minimum for producing power.
Summary of the invention
The object of the present invention is to provide a kind of semiconductor element and increase semiconductor element and effectively operate Method for Area: one of which; Dwindle the bore hole size in the line and enlarge the distance between any two adjacent holes in the line, to improve manufacturing cost and time; Its two, dwindle the distance between any two line, to increase effective running area of semiconductor element, it also keeps suitable error distance simultaneously.
To achieve these goals, the present invention provides a kind of increase semiconductor element effectively to operate Method for Area, and it comprises following steps: deposit first conductive layer on substrate; Use laser in first conductive layer, to depict a plurality of first line; These a plurality of first line are by the bottom surface and the exposed portions serve substrate of delineation to first conductive layer; Each first line is made up of a plurality of first holes, and each first hole is to overlap with adjacent first hole; Deposit at least the semiconductor material layer on first conductive layer and in these a plurality of first line; Use laser in semiconductor material layer, to depict a plurality of second line, bottom surface and exposed portions serve first conductive layer to semiconductor material layer delineated in these a plurality of second line, and each second line is made up of a plurality of second holes; Deposit second conductive layer on semiconductor material layer and in these a plurality of first line and this a plurality of second line; Use laser in second conductive layer, to depict a plurality of the 3rd line; Bottom surface and exposed portions serve first conductive layer to semiconductor material layer delineated in these a plurality of the 3rd line; Each the 3rd line is made up of a plurality of the 3rd holes, and each the 3rd hole is to overlap with adjacent the 3rd hole; Wherein second hole is through dwindling, and the distance with between second line of the distance between second line of dwindling first line and vicinity and the 3rd line and vicinity increases semiconductor element by this and effectively operates area.
According to a specific embodiment of the present invention, each second hole is to overlap with adjacent second hole.
According to a specific embodiment of the present invention, each second hole is to separate a segment distance with adjacent second hole.
According to a specific embodiment of the present invention, the beeline of the central point of the central point of each second hole and adjacent second hole is at least 20 μ m.
According to a specific embodiment of the present invention, the beeline in the marginal boundary line of the central point of second hole to this hole is less than 20 μ m.
According to a specific embodiment of the present invention, the beeline in the marginal boundary line of the central point of first hole to this hole is 5 to 20 μ m.
According to a specific embodiment of the present invention, the beeline in the marginal boundary line of the central point of the 3rd hole to this hole is 15 to 40 μ m.
According to a specific embodiment of the present invention, the horizontal range between horizontal range between second line of first line and vicinity and/or second line of the 3rd line and vicinity is less than 80 μ m.
According to a specific embodiment of the present invention, be necessary for 50S at least by the electrical conductivity of the formed circuit path of second hole, this circuit path lets first conductive layer contact with second conductive layer.
To achieve these goals, the present invention also provides a kind of semiconductor element, and it effectively operates area increases, and this semiconductor element comprises: substrate; First conductive layer; It is formed on the substrate and stands laser grooving and scribing; The bottom surface and the exposed portions serve substrate of this laser grooving and scribing and delineation to first conductive layer; To form a plurality of first line, each first line is made up of a plurality of first holes, and each first hole is to overlap with adjacent first hole; At least one semiconductor material layer; It is formed on first conductive layer and stands laser grooving and scribing; This laser grooving and scribing and delineate bottom surface and exposed portions serve first conductive layer to semiconductor material layer, to form a plurality of second line, each second line is made up of a plurality of second holes; Second conductive layer; It is formed on and stands laser grooving and scribing on the semiconductor material layer; This laser grooving and scribing and delineate bottom surface and exposed portions serve first conductive layer to semiconductor material layer, to form a plurality of the 3rd line, each the 3rd line is made up of a plurality of the 3rd holes; Each the 3rd hole is to overlap with adjacent the 3rd hole; Wherein second hole is through dwindling, and the distance with between second line of the distance between second line of dwindling first line and vicinity and the 3rd line and vicinity increases semiconductor element by this and effectively operates area.
According to a specific embodiment of the present invention, each second hole is to overlap with adjacent second hole.
According to a specific embodiment of the present invention, each second hole is to separate a segment distance with adjacent second hole.
According to a specific embodiment of the present invention, the beeline of the central point of the central point of each second hole and adjacent second hole is at least 20 μ m.
According to a specific embodiment of the present invention, the beeline in the marginal boundary line of the central point of second hole to this hole is less than 20 μ m.
According to a specific embodiment of the present invention, the beeline in the marginal boundary line of the central point of first hole to this hole is 5 to 20 μ m.
According to a specific embodiment of the present invention, the beeline in the marginal boundary line of the central point of the 3rd hole to this hole is 15 to 40 μ m.
According to a specific embodiment of the present invention, the distance between distance between second line of first line and vicinity and/or second line of the 3rd line and vicinity is less than 80 μ m.
According to a specific embodiment of the present invention, be necessary for 50S at least by the electrical conductivity of the formed circuit path of second hole, this circuit path lets first conductive layer contact with second conductive layer.
Effect of the present invention is; Through dwindling second hole; Distance with between second line of the distance between second line of dwindling first line and vicinity and the 3rd line and vicinity increases effective running area of semiconductor element by this, and improves manufacturing cost and time.
Describe the present invention below in conjunction with accompanying drawing and specific embodiment, but not as to qualification of the present invention.
Description of drawings
Figure 1A to Fig. 1 F is a cutaway view, and it has explained the method that forms film solar battery module 10 by laser grooving and scribing;
Fig. 2 A to Fig. 2 C is a plane graph, and it has been explained and has used first line, 13, second line the 15 and the 3rd line 17 that laser depicted.
Wherein, Reference numeral
10 solar modules
11 substrates
12 first conductive layers
13 first line
14 semiconductor material layers
15 second line
16 second conductive layers
17 the 3rd line
22 first holes
24 second holes
26 the 3rd holes
First line that x does not further and the horizontal mid-point distance between second line
The 3rd line that y does not further and the horizontal mid-point distance between second line
The horizontal mid-point distance of x ' between first line and second that furthers is rule
The horizontal mid-point distance of y ' between the 3rd line and second that furthers is rule
X " through further the 3rd the line and second the line between the horizontal mid-point distance
Y " through further the 3rd the line and second the line between the horizontal mid-point distance
Embodiment
The invention relates to the improvement that semiconductor element effectively operates area, the below specific embodiment is to be example with the film solar battery module.
Figure 1A to Fig. 1 F is a cutaway view, and it has explained the method that forms film solar battery module 10 by laser grooving and scribing.With reference to Figure 1A, deposit first conductive layer 12 on substrate 11.With reference to Figure 1B; Use laser in first conductive layer 12, to depict a plurality of first line 13; These a plurality of first line 13 are delineated to the bottom surface of first conductive layer 12; And exposed portions serve substrate 11, forming a plurality of first conductive layer, 12 parts of separating, and these a plurality of first line 13 are parallel in fact.With reference to figure 1C, deposit at least semiconductor material layer 14 on first conductive layer 12 and in these a plurality of first line 13.With reference to figure 1D; Use laser in semiconductor material layer 14, to depict a plurality of second line 15; These a plurality of second line 15 are delineated to the bottom surface of semiconductor material layer 14, and exposed portions serve first conductive layer 12, to form a plurality of semiconductor material layer that separates 14 parts; And these a plurality of second line 15 are parallel in fact, and second line 15 is parallel with first line 13 in fact.With reference to figure 1E, deposit second conductive layer 16 on semiconductor material layer 14 and in these a plurality of first line 13 and this a plurality of second line 15.With reference to figure 1F; Use laser in second conductive layer 16 and semiconductor material layer 14, to depict a plurality of the 3rd line 17; These a plurality of the 3rd line 17 are delineated to the bottom surface of semiconductor material layer 14, and exposed portions serve first conductive layer 12, to form a plurality of second conductive layer, 16 parts of separating; And these a plurality of the 3rd line 17 are parallel in fact, and the 3rd line 17 is parallel with second line 15 with first line 13 in fact.By this, second conductive layer, 16 parts of arbitrary battery unit can contacts through second line 15 with first conductive layer, 12 parts of adjacent another battery unit then and form circuit path adjacent two battery units are connected.
The method of laser grooving and scribing is to remove at ad-hoc location by the specific laser spot definition to desire to remove material and form continuous hole, and it is overlapped wherein having the subregion between the hole, to form line.Fig. 2 A is a plane graph, and it has been explained and has used first line, 13, second line the 15 and the 3rd line 17 that laser depicted.With reference to figure 2A, each first line 13 is made up of 22 of a plurality of first holes; Each second line 15 is made up of 24 of a plurality of second holes; Each the 3rd line 17 is made up of 26 of a plurality of the 3rd holes.Horizontal mid-point between first line, 13 and second line 15 is about 100 μ m apart from the horizontal mid-point distance y between x and the 3rd line 17 and second line 15.Be noted that: term " mid point distance " is meant the distance between the center line of center line to another line of a certain line.
When carrying out laser grooving and scribing, first line, 13, second line the 15 and the 3rd line 17 must be closer to each other as much as possible.But because when carrying out laser grooving and scribing; First line, 13, second line the 15 and the 3rd line 17 can produce drift because of factor such as temperature; It can't be dropped on the target location exactly; So, must keep suitable error distance between first line, 13, second line the 15, the 3rd line 17, produce the phenomenon of electric leakage current even short circuit to avoid ruling overlapping.Yet in order to keep suitable error distance, the horizontal range of dwindling first line, 13, second line the 15 and the 3rd line 17 just becomes and is difficult to reach.
Therefore; The present invention states on the implementation when forming the method (shown in Figure 1A to Fig. 1 F) of tandem thin film solar cell module by laser grooving and scribing; Mode by out of focus and/or reduction laser power is dwindled spot size diameters; With using laser in semiconductor material layer, to depict in the step of a plurality of second line 15, dwindle second hole.Be noted that: owing to reduced laser power, so the useful life of laser thereby increase have improved manufacturing cost by this.
Fig. 2 B and Fig. 2 C are plane graphs, and it has been explained and has used first line, 13, second line the 15 and the 3rd line 17 that laser depicted.With reference to figure 2B and Fig. 2 C, the radius of second hole 24 is to be contracted to less than 20 μ m, and the radius of first hole still maintains 5 to 20 μ m, and the radius of the 3rd hole still maintains 15 to 40 μ m.Compared to Fig. 2 A, second hole 24 is for dwindling, and first hole 22 is still kept identical size with the 3rd hole 26.Though first hole 22, second hole 24 and the 3rd hole 26 of above-mentioned specific embodiment are circular openings; But the present invention is not restricted to this; First hole 22, second hole 24 and the 3rd hole 26 can comprise the hole of different shape; For instance, square, triangle, ellipse etc.
In a specific embodiment; Shown in Fig. 2 B; Horizontal mid-point between first line, 13 and second line 15 is apart from the horizontal mid-point distance y between x ' and the 3rd line 17 and second line 15 ' can further less than 80 μ m, and still keep suitable error distance.In a better specific embodiment; Shown in Fig. 2 C; The horizontal mid-point of first line, 13 and second line between 15 is apart from x " and the 3rd line 17 and second line 15 between the horizontal mid-point distance y " can further less than 50 μ m, and still keep suitable error distance.Because the horizontal mid-point of first line, 13 and second line between 15 is apart from x ', x " and the 3rd line 17 and second line 15 between the horizontal mid-point distance y ', y " dwindle, so but the generating area of solar module increase.
Using laser grooving and scribing to go out in the step of a plurality of second line 15, each second hole 24 can be overlapped with adjacent second hole 24, that is, the still line for connecting of a plurality of second line 15 is shown in Fig. 2 B; Each second hole 24 also can not overlap each other with adjacent second hole 24; Promptly; A plurality of second line 15 are to be formed by 24 of a plurality of not interconnected second holes; And the beeline of the central point of the central point of each second hole 24 and adjacent second hole 24 can be at least 20 μ m, shown in Fig. 2 C.Though the translational speed of dwindling second hole 24, change laser pulse shooting frequency and/or changing laser beam or load the substrate stage of board may make each second hole 24 not overlap each other with adjacent second hole 24; Do not influence first conductive layer its element of second conductive layer and interelement conductivity but can therefore not show to land, this is still to maintain suitable thickness because still maintain the contact area and the semiconductor material layer 14 of appropriateness between first conductive layer 12 and second conductive layer 16.By the electrical conductivity of second hole, 24 formed circuit paths (it lets first conductive layer 12 contact with second conductive layer 16) is to be directly proportional with the sectional area of second hole 24 and to be inversely proportional to the thickness (that is this circuit path length) of semiconductor material layer 14.For instance; According to a specific embodiment of the present invention; The resistivity of first conductive layer 12 and second conductive layer 16 (conductive layer in this use is ZnO:B) is 1.9x10-3 Ω-cm; The thickness of semiconductor material layer is 250nm, and the sectional area of second hole 24 (is 20 μ m at this radius) is 1256 μ m2, so electrical conductivity is 270.2S.But the present invention is not restricted to above-mentioned specific embodiment, the present invention can further change first conductive layer 12 and second conductive layer 16 material or thickness, change semiconductor material layer 14 thickness or change the size of second hole 24.But be noted that: the electrical conductivity by second hole, 24 formed circuit paths is necessary for 50S at least, to avoid influencing conductivity.Simultaneously,,, make the speed of laser grooving and scribing improve, improved manufacturing speed by this so second hole, 24 quantity more can reduce because each second hole 24 can be not overlap each other with adjacent second hole 24 and have to each other at interval.
But be noted that: though the present invention can draw in the horizontal mid-point of first line, 13 and second line between 15 by dwindling second hole 24 apart from x ', x " and the 3rd line 17 and second line 15 between the horizontal mid-point distance y ', y ", but can't draw in horizontal mid-point between first line, 13 and second line 15 by dwindling first hole 22 or the 3rd hole 26 apart from x ', x " and the 3rd the line 17 and second horizontal mid-point distance y of ruling between 15 ', y ".This is because dwindle first hole 22 and the 3rd hole 26 possibly make its hole not overlap each other, and so influenced the insulating properties between a plurality of first conductive layer, 12 parts of separating, and the insulating properties between a plurality of second conductive layer, 16 parts of separating.
In above-mentioned specific embodiment of the present invention, this substrate 11 is glass, metal, pottery or plastic material.First conductive layer 12 or second conductive layer 16 can be metal films such as nesa coatings such as zinc oxide, indium tin oxide, tin ash or silver, aluminium, gold, copper, molybdenum, titanium.This semiconductor material layer 14 can be amorphous silicon membrane, Nano silicon-crystal thin film, microcrystalline silicon film, polysilicon membrane, copper indium two selenium films, CIGS thin-film, copper indium gallium sulphur selenium film, Cadimium telluride thin film, aluminium gallium nitride alloy film, aluminum gallium arsenide film, gallium nitride film, indium phosphide or InGaP film, or the combination of previous materials.
Though specific embodiment of the present invention is to be example with the silicon film solar batteries module, yet the present invention is not restricted to this.Method of the present invention also can be applicable to other semiconductor and photoelectric field of using laser to delineate.
Certainly; The present invention also can have other various embodiments; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (18)
1. an increase semiconductor element effectively operates Method for Area, it is characterized in that, comprises following steps:
Deposit first conductive layer on substrate;
Use laser in first conductive layer, to depict a plurality of first line; These a plurality of first line are by the bottom surface and the exposed portions serve substrate of delineation to first conductive layer; Each first line is made up of a plurality of first holes, and each first hole is to overlap with adjacent first hole;
Deposit at least the semiconductor material layer on first conductive layer and in these a plurality of first line;
Use laser in semiconductor material layer, to depict a plurality of second line, bottom surface and exposed portions serve first conductive layer to semiconductor material layer delineated in these a plurality of second line, and each second line is made up of a plurality of second holes;
Deposit second conductive layer on semiconductor material layer and in these a plurality of first line and this a plurality of second line; And
Use laser in second conductive layer, to depict a plurality of the 3rd line; These a plurality of the 3rd line are by the bottom surface and exposed portions serve first conductive layer of delineation to this semiconductor material layer; Each the 3rd line is made up of a plurality of the 3rd holes, and each the 3rd hole is to overlap with adjacent the 3rd hole;
Wherein second hole is through dwindling, and the distance with between second line of the distance between second line of dwindling first line and vicinity and the 3rd line and vicinity increases semiconductor element by this and effectively operates area.
2. increase semiconductor element according to claim 1 effectively operates Method for Area, it is characterized in that, each second hole is to overlap with adjacent second hole.
3. increase semiconductor element according to claim 1 effectively operates Method for Area, it is characterized in that, each second hole is to separate a segment distance with adjacent second hole.
4. increase semiconductor element according to claim 3 effectively operates Method for Area, it is characterized in that, the beeline of the central point of the central point of this each second hole and adjacent second hole is at least 20 μ m.
5. increase semiconductor element according to claim 1 effectively operates Method for Area, it is characterized in that, the beeline in the marginal boundary line of the central point of second hole to this hole is less than 20 μ m.
6. increase semiconductor element according to claim 1 effectively operates Method for Area, it is characterized in that, the beeline in the marginal boundary line of the central point of first hole to this hole is 5 to 20 μ m.
7. increase semiconductor element according to claim 1 effectively operates Method for Area, it is characterized in that, the beeline in the marginal boundary line of the central point of the 3rd hole to this hole is 15 to 40 μ m.
8. increase semiconductor element according to claim 1 effectively operates Method for Area, it is characterized in that, the distance between distance between second line of first line and vicinity and/or second line of the 3rd line and vicinity is less than 80 μ m.
9. increase semiconductor element according to claim 1 effectively operates Method for Area, it is characterized in that, is 50S at least by the electrical conductivity of the formed circuit path of second hole, and this circuit path lets first conductive layer contact with second conductive layer.
10. semiconductor element, it effectively operates area increases, and it is characterized in that this semiconductor element comprises:
Substrate;
First conductive layer; It is formed on the substrate and stands laser grooving and scribing; The bottom surface and the exposed portions serve substrate of this laser grooving and scribing and delineation to first conductive layer; To form a plurality of first line, each first line is made up of a plurality of first holes, and each first hole is to overlap with adjacent first hole;
At least one semiconductor material layer; It is formed on first conductive layer and stands laser grooving and scribing; This laser grooving and scribing and delineate bottom surface and exposed portions serve first conductive layer to semiconductor material layer, to form a plurality of second line, each second line is made up of a plurality of second holes; And
Second conductive layer; It is formed on and stands laser grooving and scribing on the semiconductor material layer; This laser grooving and scribing and delineate bottom surface and exposed portions serve first conductive layer to semiconductor material layer, to form a plurality of the 3rd line, each the 3rd line is made up of a plurality of the 3rd holes; Each the 3rd hole is to overlap with adjacent the 3rd hole
Wherein second hole is through dwindling, and the distance with between second line of the distance between second line of dwindling first line and vicinity and the 3rd line and vicinity increases semiconductor element by this and effectively operates area.
11. semiconductor element according to claim 10 is characterized in that, each second hole is to overlap with adjacent second hole.
12. semiconductor element according to claim 10 is characterized in that, each second hole is to separate a segment distance with adjacent second hole.
13. semiconductor element according to claim 12 is characterized in that, the beeline of the central point of the central point of each second hole and adjacent second hole is at least 20 μ m.
14. semiconductor element according to claim 10 is characterized in that, the beeline in the marginal boundary line of the central point of second hole to this hole is less than 20 μ m.
15. semiconductor element according to claim 10 is characterized in that, the beeline in the marginal boundary line of the central point of first hole to this hole is 5 to 20 μ m.
16. semiconductor element according to claim 10 is characterized in that, the beeline in the marginal boundary line of the central point of the 3rd hole to this hole is 15 to 40 μ m.
17. semiconductor element according to claim 10 is characterized in that, the distance between distance between second line of first line and vicinity and/or second line of the 3rd line and vicinity is less than 80 μ m.
18. semiconductor element according to claim 10 is characterized in that, is 50S at least by the electrical conductivity of the formed circuit path of second hole, this circuit path lets first conductive layer contact with second conductive layer.
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| CN111490107A (en) * | 2019-01-25 | 2020-08-04 | 神华（北京）光伏科技研发有限公司 | Thin film solar cell and preparation method thereof |
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