CN102452048A

CN102452048A - Polishing disk

Info

Publication number: CN102452048A
Application number: CN201010527753XA
Authority: CN
Inventors: 褚桂君
Original assignee: Individual
Current assignee: Individual
Priority date: 2010-11-02
Filing date: 2010-11-02
Publication date: 2012-05-16

Abstract

The invention relates to the technical field of chemically mechanical polishing, in particular to a polishing disk, the surface of the polishing disk is in an arrangement shape of independent seed block structures, the independent seed block are divided into a relatively harder upper layered block and a relatively softer lower layered block. The seed blocks are fixedly bonded on a bottom layer. The surface working layer of the polishing disk is formed by block-type bulges with a sunflower seed arrangement structure, counterclockwise and clockwise inclined aligned slots are formed on the bionic arrangement of the surface of the polishing disk; the polyurethane seed block layer is formed by poly urethane (PU) resin, epoxy reactive diluent, curing agent and abrasive material at the mass ratio of 100:100-150:100-300:200-280. The hardness of the soft block layer and the hard block layer is controlled by vulcanization, the temperature of the soft layer is vulcanized into 100 DEG C, the temperature of the hard layer is vulcanized into 85 DEG C, the temperature of the vulcanization is less than 150 DEG C to 160 DEG C, and the time is about 3-5 hours.

Description

A kind of polishing disk

Technical field

The present invention relates to a kind of chemical machinery, a kind of polishing disk in particularly a kind of polishing technology field.

Background technology

Chemically mechanical polishing (CMP) is to utilize the effect of chemistry and machinery that material is removed, and obtains a kind of processing method of ultra-smooth and ultra flat surfaces.This technology is widely used in the manufacturing field of semiconductor wafer, optical mirror plane, display base plate, hard disc substrate and ceramic flat surface part etc.Particularly this technology has been applied to since integrated circuit (IC) and micro mechanical system (MIMS) the manufacturing field, and it more and more obtains scholar and business people's extensive attention.

In CMP process; Polished surface of the work contacts with the polishing pad that is cemented in the polishing disk surface; And mutual friction mutually under certain pressure and velocity conditions; Injecting corresponding polishing fluid simultaneously, is that material is removed through the chemical action of polishing fluid and the mechanical friction effect of polishing pad (comprising the abrasive material in the polishing fluid) and polished surface.The form of polishing pad has played very crucial effect in this process.General polishing pad is that a kind of softer viscoelastic material is processed, and some polishing pads are to make its inside contain certain gap through specific technology.In polishing process; The effect of polishing pad is not only and is stored polishing fluid and be transported to the whole machining process zone of workpiece to it; And remove residuals that polishing process produces (like the polishing chip; Polishing pad fragment etc.), but also participate in the friction cutting of surface of the work directly and utilize its strain to change the contact condition with workpiece, and embed abrasive material and the property such as height such as grade that improves abrasive material.Therefore, the surface geometry characteristic of polishing pad and physical characteristic have crucial influence to the macroscopic view and the microcosmic geometrical property on polished surface.

Summary of the invention

The object of the invention is to provide a kind of novel bionic polishing pad that is used for chemically mechanical polishing (CMP) technical field, and provides its design and preparation method.

Technical scheme of the present invention is: a kind of polishing disk is characterized in that: the pad interface working lining is made up of the block-shaped protrusion with sunflower seed arrangement architecture, and pad interface is bionical arranges to form and have counterclockwise and clockwise parastichy groove; Polyurethane seed particle agglomerate layer is that the mass ratio by PU resin, epoxy active diluent, curing agent and abrasive material is 100: 100-150: 100-300: 200-280.The Hardness Control of magma layer and lump layer is by being controlled by vulcanizing treatment, and the soft formation sulfuration is 100 ℃, and the hard formation sulfuration is 85 ℃, and described curing temperature temperature is no more than 150 ℃-160 ℃, and the time is about 3-5 hour.

The surface of polishing pad has the seed piece distributed architecture on sunflower surface, and the upper strata of seed piece is hard polyaminoester layer (can be mixed with nanometer abrasive powder such as silica, cerium oxide, diamond, brium carbonate), and lower floor is the flexibel polyurethane layer.The seed piece is cemented in the thin basic unit.The seed piece of this pad is arranged and is satisfied the phyllotaxy theory, and promptly the theoretical F.R.Yeatts phyllotaxy model of phyllotaxy promptly satisfies θ=137.508 ° n, and the radial position of seed piece is satisfied Wherein θ is the polar angle of n protruding seed piece, and R is the polar coordinates radius of n protruding seed piece, R ₀Be the diameter of polishing pad, the κ coefficient of growth.Guarantee that simultaneously each seed interblock is separated from each other, satisfy " Winkler ground " theory of contact mechanics.Screen printing technique is adopted in the manufacturing of polishing pad.Produce half tone earlier, the half tone pattern must satisfy theoretical and " Winkler ground " theory of phyllotaxy; In basic unit, print flexible polyurethane seed particle agglomerate layer then, and carry out cured; Rigid polyurethane seed particle agglomerate layer (can be mixed with the nanometer abrasive powder) is printed in the back again, and carries out cured.The corresponding polishing pad of final formation.

The invention has the beneficial effects as follows: the structural design of this polishing pad satisfies the theoretical F.R.Yeatts phyllotaxy model of phyllotaxy in the bioscience, guarantees that simultaneously each seed piece is separated from each other, and satisfies " Winkler ground " theory of contact mechanics.

Description of drawings

Fig. 1 polishing disk structural representation;

The sectional schematic diagram of Fig. 2 polishing disk;

Fig. 3 screen template sketch map, among the figure:

Diagonal duct 1 counterclockwise diagonal duct 2 seeds distribute and go up rigid polyurethane projection 3 clockwise

The seed branch plants template 6 screen frames 7 that sunflower seed that 5 exposures of flexible polyurethane projection 4 pad flexible polyurethane basic units stay is arranged

The practical implementation method

Below in conjunction with accompanying drawing and embodiment the present invention is described in further detail:

It is φ 0.5～5mm that the seed piece diameter that Fig. 1 designs pad is chosen scope; Guarantee that simultaneously each seed piece is separated from each other; Form clockwise diagonal duct 1 and counterclockwise diagonal duct 2, and satisfy " Winkler ground " theoretical separate cutting apart of unit of contact mechanics.

The thickness on the polishing pad seed shape projection upper strata 3 among Fig. 2 is 0.5～1mm, and material is a hard polyaminoester, can be mixed with micro-nano abrasive material, also can not sneak into abrasive material.Sneak into abrasive material and can be diamond, cubic boron nitride, silica, cerium oxide, aluminium oxide etc., granularity is 5～200nm.Lower floor is a flexibel polyurethane material 4, and thickness can be chosen in 0.3～0.5mm scope; Basic unit is that base material 5 can be that nonwoven is processed, leather, flexible polyurethane leather etc. have the certain flexibility made, and thickness can be chosen in 0.3～0.5mm scope.

Polyurethane material is made up of PU resin, epoxy active diluent, curing agent, and mass ratio is 100: 100-150: 100-300; Mass ratio when being mixed with abrasive material is that mass ratio is 100: 100-150: 100-300: 200-280.Wherein the PU resin is methyl diphenylene diisocyanate (MDI), polytetrahydrofuran diol (PTMG), PEPA, ethylene glycol, methyl alcohol, dimethyl formamide.Epoxy active diluent is methyl propenoic acid glycidyl ether, butyl diglycidyl ether, allyl glycidyl ether or their mixing.Described curing agent is benzene sulfonyl chloride, paratoluensulfonyl chloride, sulfuric acid acetate, mahogany acid, aliphatic polyamine, aromatic polyamine.The Hardness Control of magma layer and lump layer is controlled by vulcanizing treatment, and soft formation sulfuration does, the temperature of hard formation sulfuration is 80 ℃-110 ℃, and the time is about 3-5 hour.

At first make half tone shown in Figure 3.The half tone frame can be an aluminum alloy materials, also can be carbon steel material.It is theoretical that aforesaid phyllotaxy is followed in design, and its seed hole dimension of biting is confirmed according to seed size.Adopt the manufacturings of numerical control punching or digital control laser cutting mode, also can adopt electrocasting, mask corrosion manufactured.Masterplate can be the net of general serigraphy, also can be stainless steel foil plate or Copper Foil version that thickness can be at 0.1～0.3mm.Can be when adopting electroforming to make with nickel or flexible.The half tone size is followed circuit board serigraphy mother matrix design rule.

Claims

1. polishing disk, it is characterized in that: the polishing disk work layer on surface is made up of the block-shaped protrusion with sunflower seed arrangement architecture, and the polishing disk surface biomimetic is arranged to form and is had counterclockwise and clockwise parastichy groove; Polyurethane seed particle agglomerate layer is that the mass ratio by PU resin, epoxy active diluent, curing agent and abrasive material is 100: 100-150: 100-300: 200-280.The Hardness Control of magma layer and lump layer is by being controlled by vulcanizing treatment, and the soft formation sulfuration is 100 ℃, and the hard formation sulfuration is 85 ℃, and described curing temperature temperature is no more than 150 ℃-160 ℃, and the time is about 3-5 hour.