CN102449766A - Image sensor and operating method - Google Patents
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- CN102449766A CN102449766A CN2011800023169A CN201180002316A CN102449766A CN 102449766 A CN102449766 A CN 102449766A CN 2011800023169 A CN2011800023169 A CN 2011800023169A CN 201180002316 A CN201180002316 A CN 201180002316A CN 102449766 A CN102449766 A CN 102449766A
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
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- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L27/144—Devices controlled by radiation
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Abstract
An image sensor and a method of operating the image sensor are provided. At least one pixel of the image sensor includes a detection portion including a plurality of doping areas having different pinning voltages, and a demodulation portion to receive an electron from the detection portion, and to demodulate the received electron.
Description
Technical field
One or more embodiment relate to the structure and the method for operation thereof of the pixel of a kind of imageing sensor, imageing sensor.
Background technology
Current, the mancarried device (for example, digital camera, mobile communication terminal etc.) with imageing sensor develops and on market, buys and sells.These imageing sensors are formed by the low profile photovoltaic diode array that is called as pixel or picture point (photosite).Usually, pixel is directly from the light extraction color, but is electronics with the photon conversion of wide band.Therefore, the pixel of imageing sensor can need only to receive and is used for leniently that the light of band obtains the light within the necessary band of color.Each pixel of imageing sensor can be an electronics through combining colour filter to wait the photon conversion corresponding with particular color.
In order to use imageing sensor to obtain three-dimensional (3D) image, need obtain color and about the information of the distance between object and the imageing sensor.Usually, the reconstructed image about the distance between object and the imageing sensor is represented as depth image of the prior art.Though other wavelength are available, can obtain depth image through using the infrared light outside the visible region.
The method of obtaining about the information of the distance from the transducer to the object can roughly be divided into active approach and passive scheme.Active approach can comprise triangulation scheme usually; Triangulation scheme be used to measure shine object and from object be reflected and flight time in propagation time of the light that returns (Time-of-Flight, TOF) and use the triangulation that detects with the position of the light of transducer laser emission spaced apart by a predetermined distance and reflection to come computed range.Passive scheme can be included in the scheme that only calculates the distance of object under the situation of irradiates light not based on image information usually, and passive scheme can be used in stereoscopic camera.
Can detect change based on the degree of depth capturing technology of TOF when the light with modulating pulse of irradiation phase place when object is reflected and return.Here, can calculate the change of phase place based on the amount of electric charge.The light of irradiation can be harmless sightless infrared ray (IR).In addition, for the time difference between the light of the light that detects irradiation and reflection, can use the degree of depth pel array different with general color sensor.
Summary of the invention
According to one or more embodiment; A kind of imageing sensor is provided; At least one pixel of said imageing sensor comprises: the test section; Be used to shift the electronics that the test section produces after receiving light, the test section comprises a plurality of doped regions with variable locking voltage in the test section, applying electric field, thereby to the demodulation part of said pixel metastatic electron; The demodulation part is used at least one node metastatic electron, to accumulate one or more electronics.
Said pixel can be configured to apply another electric field, and said another electric field makes electronics pass through the demodulation part and shifts to said at least one node, to accumulate one or more electronics.
In addition, said a plurality of doped regions can comprise a plurality of n-layers respectively, and wherein, along with each the n-layer in said a plurality of n-layers is configured to the closer to the demodulation part, the latch voltage separately of each the n-layer in said a plurality of n-layers is high more.The latch voltage separately of each the n-layer in said a plurality of n-layer also can be based on doping content separately.
Said a plurality of doped region can comprise a plurality of p-layers respectively, and wherein, along with each the p-layer in said a plurality of p-layers is configured to the closer to the demodulation part, the latch voltage separately of each the p-layer in said a plurality of p-layers is high more.The latch voltage separately of each the p-layer in said a plurality of p-layer also can be based on doping content separately.
Can come the configuration detection part with pinned photodiode, pinned photodiode comprises a plurality of doped regions.
Said imageing sensor also can comprise: photogate is used to receive the electronics that part to be detected shifts to the demodulation part.Photogate can be included in the demodulation part.In addition, but the photogate conductively-closed to the reception of light.
Said pixel can be configured to feasible: the applying of another electric field of the change of the electromotive force of photogate control demodulation part, said another electric field makes the electronics that receives shift to accumulate one or more electronics to said at least one node from photogate.
Said pixel also can be configured to feasible: in very first time section, the electromotive force of photogate is lower than the electromotive force of test section and the electromotive force of first transfering node; Second time period after following very first time section closely, the electromotive force of photogate is higher than the electromotive force of test section and the electromotive force of first transfering node.
Here; Said pixel also can be configured to the 3rd time period that makes after following for second time period closely; The electromotive force of photogate is lower than the electromotive force of test section and the electromotive force of second transfering node; Make in the 3rd time period; The electromotive force of the photogate and first transfering node can not cause the electronics of photogate storage to be transferred to first transfering node, and makes in the 3rd time period, and the electromotive force of the photogate and second transfering node causes the electronics of photogate storage to be transferred to second transfering node.
Said pixel also can be configured to feasible: in second time period; The electromotive force of photogate and the electromotive force of test section cause electronics to transfer to photogate from the test section, and the electromotive force of photogate and the electromotive force of first transfering node cause electronics can not be transferred to first transfering node simultaneously.
Said pixel also can be configured to feasible: in very first time section; The electromotive force of photogate and the electromotive force of test section cause electronics within the test section to the test section near the edge transitions of photogate and can not stored by photogate; And in very first time section, the electromotive force of the electromotive force of photogate and first transfering node causes the electronics of photogate storage to be transferred to first transfering node.
Said pixel also can be configured to feasible: when at the electromotive force of the second time period photogate during greater than first transfering node and second transfering node; In second time period; The electronics that photogate storage receives and can be with any one in first transfering node and second transfering node of the electron transfer of storage; Wherein, second transfering node is configured to from the photogate metastatic electron.
Said pixel also can be configured to feasible: the electronics that before very first time section, is stored in the photogate moves to first transfering node in very first time section, and the electronics that part to be detected shifts to the demodulation part moves to photogate in second time period.
According to one or more embodiment; A kind of imageing sensor is provided, and this imageing sensor has at least one pixel, and said pixel comprises: the demodulation part; Through at least one transfering node the electronics of storing is carried out demodulation, the electronics of said storage was stored in the demodulation part before very first time section; The test section; Be used in very first time section the front side of the electron transfer that produces to the demodulation part; When receiving the electronics that the light time test section produces said generation in very first time section, wherein, said pixel is configured in second time period electronics that shifts moved to the demodulation part.
Said pixel can be configured to feasible: in very first time section; The electromotive force of test section applies drift force so that the electron transfer that produces is arrived the front side of demodulating unit at least; In second time period; At least the electromotive force of test section applies the drift force that is used for the electronics that shifts is moved to the memory of demodulation part; And during second time period, stop at least one electromotive force of the demodulation part of second time period to apply drift force with the electron transfer of storage at least one transfering node in the demodulation part.
Said pixel can be configured to during very first time section, the electronics of storing moved to said at least one transfering node.
The test section can comprise a plurality of doped regions, and the latch voltage of each doped region in said a plurality of doped regions is based on separately doping content or junction depth.Can also come the configuration detection part with pinned photodiode, pinned photodiode comprises a plurality of doped regions.Pinned photodiode can have the geometry that narrows down towards the demodulation part.Pinned photodiode can have the geometry that broadens towards the demodulation part.In addition, the demodulation part can comprise photogate.
According to one or more embodiment, a kind of method of application drawing image-position sensor is provided, said imageing sensor comprises at least one pixel, said pixel comprises: the test section is used for producing electronics when receiving the light time; The demodulation part is used for the electronics that produces is carried out demodulation and comprises first transfering node and second transfering node, and said method comprises: the electromotive force of control detection part is to shift the electronics that produces to the demodulation part; Electromotive force in the control pixel is so that the electronics that produces is stored predetermined amount of time; The electromotive force of control demodulation part is so that the electronics of storage is transferred to first transfering node after said predetermined amount of time.
Said method also can comprise: the electromotive force in the control pixel, so that the other electronics that produces is stored said predetermined amount of time; At least one electromotive force of control demodulation part so that the other electronics of storage is transferred to second transfering node after said predetermined amount of time, and makes the other electronics of storage after said predetermined amount of time, not be transferred to first transfering node.
Said method also can comprise: first electronics of first transfering node is transferred in accumulation, and second electronics of second transfering node is transferred in accumulation; First electronics of accumulation and second electronics of accumulation are compared, and confirm the flight time of said light.
According to one or more embodiment, provide be used to control the nonvolatile medium of at least one processing unit at least a comprising with the computer-readable code of realizing one or more methods disclosed herein.
According to one or more embodiment, a kind of method of application drawing image-position sensor is provided, said imageing sensor comprises at least one pixel, said pixel comprises: the test section is used for producing electronics when receiving the light time; The demodulation part is used for the electronics that produces is carried out demodulation, and the demodulation part comprises photogate, first transfering node and second transfering node, and said method comprises: in very first time section, the electronics that the test section is produced is stored in the photogate; Second time period after following very first time section closely, the electronics that is stored in the photogate is carried out demodulation through one of first transfering node and second transfering node.
The step of storing in very first time section can comprise: electromotive force and the electromotive force of first transfering node and the electromotive force of second transfering node of photogate are set, so that the electromotive force of photogate is higher than the electromotive force of first transfering node and the electromotive force of second transfering node.
The step of carrying out demodulation in second time period can comprise: the electromotive force of photogate and the electromotive force of one of first transfering node and second transfering node are set, so that the electromotive force of one of said first transfering node and second transfering node is higher than the electromotive force of photogate.
Said method also can comprise: the electromotive force of control photogate is lower than the electromotive force of test section and the electromotive force of second transfering node; Control the electronics that the electromotive force of first transfering node makes the electromotive force of the photogate and first transfering node can not cause storing simultaneously and be transferred to first transfering node, and the electromotive force of the control photogate and second transfering node is so that the electronics of the storage of being stored is transferred to second transfering node.
Said method also can comprise: the electromotive force of control photogate and the electromotive force of test section; So that the electronics that the test section produces is transferred to photogate from the test section, control the electromotive force of first transfering node and second transfering node simultaneously so that the electronics of storage can not be transferred to any one in first transfering node and second transfering node.
Said method also can comprise: the electromotive force of electromotive force and the test section of control photogate so that the electronics that the test section produces within the test section to the test section near the edge transitions of photogate and can not move to photogate, the electromotive force of electromotive force and first transfering node of controlling photogate simultaneously is so that the electronics of storing is transferred to first transfering node.
Said method also can comprise: the electromotive force of control photogate is higher than the electromotive force of first transfering node and the electromotive force of second transfering node, is transferred to any one in first transfering node and second transfering node with the electronics of the storage that stops photogate.
Will be in ensuing description aspect part illustrated embodiments other, some will be clearly through describing, and perhaps can pass through this disclosed enforcement and learn.
Description of drawings
Through the description of embodiment being carried out below in conjunction with accompanying drawing, these and/or other aspect will become clear and be easier to and understand, wherein:
Fig. 1 illustrates the structure of the pixel of conventional image sensor;
Fig. 2 and Fig. 3 illustrate the sequential chart that is used to explain the influence of demodulation speed when fathoming;
Fig. 4 illustrates the diagrammatic sketch according to the imageing sensor of one or more embodiment;
Fig. 5 illustrates the plane graph according to the pixel of the imageing sensor of one or more embodiment;
Fig. 6 illustrates the sectional view along the line A-A ' of Fig. 5 intercepting according to one or more embodiment;
Fig. 7 illustrates the diagrammatic sketch of the different junction depths of the test section (for example, the test section of Fig. 6) according to one or more embodiment;
Fig. 8 illustrates the sectional view along the line B-B ' of Fig. 5 intercepting according to one or more embodiment;
Fig. 9 illustrates the diagrammatic sketch according to the electromotive force that (for example, the test section shown in Fig. 5) upward forms in the test section of one or more embodiment;
Figure 10 illustrates the diagrammatic sketch according to the electromotive force that (for example, the demodulation part shown in Fig. 5) upward forms in the demodulation part of one or more embodiment;
Figure 11 and Figure 12 illustrate the diagrammatic sketch according to the method for the application drawing image-position sensor of one or more embodiment;
Figure 13 illustrates the sequential chart in the operation of the pixel shown in Figure 11 and Figure 12 according to one or more embodiment;
Figure 14 and Figure 15 illustrate the diagrammatic sketch according to the electromotive force of the pixel of the imageing sensor of one or more embodiment;
Figure 16 to Figure 19 illustrates the diagrammatic sketch according to the various modification of the pixel of the imageing sensor of one or more embodiment.
Embodiment
Now, will describe one or more embodiment illustrated in the accompanying drawings in detail, wherein, identical label is represented identical parts all the time.For this reason, embodiments of the invention can be implemented with many different forms, and should not be interpreted as the embodiment that is limited in this elaboration.Therefore, only be below through describing embodiment with reference to accompanying drawing to explain various aspects of the present invention.
In Fig. 1, photogate (photogate) element is used to detect the light that reflects with demodulation.When voltage is applied to photogate (PG), can under PG, form depletion region.In the case, when the IR of reflection incides PG, can under PG, produce electronics.Through the operation of grid G-A or G-B, the electronics that is used for demodulation of generation is directly transferred to the first accumulation node and the second accumulation node respectively.Yet,, therefore can not produce a large amount of electronics because light is reflected from object in the very short time (for example, tens nanoseconds (ns)).After periodically producing electronics, electronics can be accumulated in to be illustrated near the first accumulation node of grid G-A and to be accumulated in and be illustrated near the second accumulation node of grid G-B.Finally, after the preset time section, can obtain TOF through reading electronics, and therefore can obtain range information from each accumulation node.As shown in Figure 1, with t
On-t
TOFProportional electronics can be accumulated in the first accumulation node, with t
TOFProportional electronics can be accumulated in the second accumulation node, thereby can obtain distance.Although can obtain distance through such dot structure and operation in theory, yet because the light velocity, the light that reflects from the object that is positioned at 10m will return in tens nanoseconds.
The influence of demodulation speed when Fig. 2 and Fig. 3 are illustrated in depth survey.The hacures shown in each waveform G-A and G-B indications along with waveform G-A and G-B in the emission light time or in the amount of the electric charge that produces near the waveform change of the initial generation of time of emission light time.For example, when modulating frequency is 20MHz, can come metastatic electron through applying voltage 25ns to each transfer gate.As shown in Figure 2, when lacking (for example) transfer time less than 1ns, can be proportional in the amount of the electric charge of accumulating node with TOF, thus can fathom exactly.On the contrary, as shown in Figure 3, when electron transfer took a long time, the amount of electric charge can be not proportional with TOF, and the result can take place and T
DelayCorresponding error, the error when this can cause fathoming.Fig. 2 is the example of high demodulation speed, and Fig. 3 is the example of low demodulation speed.
There are two prerequisites in metastatic electron, and for example, drift (drift) is handled and DIFFUSION TREATMENT.In brief, drift is handled and is made electronics moved by electric field (e-field), and DIFFUSION TREATMENT makes electronics pass through diffusion and moves.Usually, drift is handled than DIFFUSION TREATMENT fast at least 10 times.
Seeing that more than, Fig. 4 illustrates the imageing sensor 400 according to one or more embodiment.
With reference to Fig. 4, at least one pixel of imageing sensor 400 can comprise for example test section 410 and demodulation part 420.
The method of at least one pixel of application drawing image-position sensor 400 can comprise such scheme: apply electric field (e-field) to test section 410, thereby electronics can be moved to demodulation part 420.In other words, demodulation part 410 can receive light photon in very first time section, produces electronics, and transfers an electron to the front side of demodulation part 420.Demodulation part 420 can use at least one transfering node that the electronics of storage before very first time section is carried out demodulation.Here, the electronics of transferring to the front side of demodulation part 420 can be moved to demodulation part 420 in second time period.Here, for electronics, movement of electrons or shift and will be considered to be equal to the position that makes electron drift arrive sign/from the position excursion of sign.
Fig. 5 illustrates the plane graph according to the pixel 500 of the imageing sensor of one or more embodiment.Fig. 6 illustrates along the sectional view of the line A-A ' intercepting of Fig. 5, and Fig. 8 illustrates the sectional view along the line B-B ' intercepting of Fig. 5 according to one or more embodiment.
The pixel 500 of imageing sensor can comprise: test section 510, photogate 520, the first transfering node TX1 530, the second transfering node TX2 540, a FD node FD1 550 and the 2nd FD node FD2 560.Here, photogate 520, the first transfering node TX1 530, the second transfering node TX2 540, a FD node FD1 550 and the 2nd FD node FD2 560 can be thought the demodulation part corresponding with the demodulation part of Fig. 4 420 jointly.
The test section 510 of Fig. 5 can be corresponding to the test section 410 of Fig. 4.Therefore, test section 510 can receive light photon, produces electronics, and the electron transfer that produces is arrived the demodulation part.In addition, can come configuration detection part 510 with pinned photodiode.Here, test section 510 can comprise a plurality of doped regions 620,630,640 and 650, with metastatic electron.Said a plurality of doped region 620,630,640 and 650 can comprise P+ layer 620 and be arranged in the n-layer 630,640 and 650 under the P+ layer 620.Along with each of n-layer 630,640 and 650 is configured the closer to the demodulation part, n-layer 630,640 and 650 each latch voltage separately can be high more.In addition, n-layer 630,640 and 650 each latch voltage can be configured based on each doping content or junction depth (junction depth) of each n-layer 630,640 and 650.For example, can increase doping content according to the order of n-layer N1 630, N2 630 and N3 630.Particularly, the latch voltage of n-layer N1 630 can be lower than the latch voltage of n-layer N2 640, and the latch voltage of n-layer N3 650 can have the highest latch voltage in n-layer 630,640 and 650.Along with n-layer 630,640 and 650 becomes the closer to the demodulation part, when n-layer 630,640 and 650 was configured to have higher latch voltage, the electronics that is produced by test section 510 can be moved to the demodulation part through the electric field that increases the latch voltage generation.
Fig. 7 illustrates the junction depth of the test section 510 (for example, the test section of Fig. 6) that is configured to have the different junction depths that increase.In Fig. 7, the junction depth of n-layer N3730 is darker than the junction depth of the junction depth of n-layer N1 710 and n-layer N2 720, and the junction depth of n-layer N2720 is darker than the junction depth of n-layer N1 710.Here, n-layer N3 730 can be disposed in the position near the demodulation part.
With reference to Fig. 6, according to above-mentioned same principle, P+ layer 620 can be divided into a plurality of districts, and the latch voltage in each district in said a plurality of districts can be based on the doping content or the junction depth in each district in said a plurality of districts.Here, n-layer 630,640 and 650 can be replaced by single n-layer.In addition, for example, a plurality of P doped regions can be formed in the N-substrate (N-sub), and the N+ doped region can be formed on a plurality of P doped regions, thereby can realize the pixel of imageing sensor.In other words, based on embodiment, P-substrate 510, n-layer 630,640 and 650, P+ layer 620 can be replaced by N-substrate, a plurality of p-layer and N+ layer respectively.In such embodiment, test section 510 can have the N+/P/N-underlying structure.When test section 510 had the N+/P/N-underlying structure, the N+ layer can be divided into a plurality of districts, and the doping content in each district in said a plurality of districts or junction depth are by optionally configuration, and a plurality of p-layer can be replaced by single p-layer.
To not restriction of the foregoing description, therefore, should be appreciated that, test section 510 can have make latch voltage along with photogate 520 become near and any structure that increases.As shown in Figure 6, form three n-layers 630,640 and 650, yet, for example, also can form two n-layers or at least four n-layers.
The demodulation part of pixel 500 can comprise photogate 520.Here, but the upside conductively-closed of the demodulation part of pixel 500, and therefore, in the demodulation part of pixel 500, the light photon of reception can not produce electronics.In the example embodiment of Fig. 6, can use the upside of metal 610 shielded from light electric grids 520, it should be noted that interchangeable shielding material also is feasible.With reference to Fig. 5 to Fig. 8, photogate 520, the first transfering node TX1 530 and the second transfering node TX2 540 can in series be arranged in the P-substrate.Can be based on the direction that is applied to the electric field that each voltage among photogate 520, the first transfering node TX1 530 and the second transfering node TX2 540 confirms to be produced by the demodulation part.Electronics can correspondingly move based on the direction of the electric field of confirming.Here, in one embodiment, photogate 520 can be formed by polysilicon, and the first transfering node TX1 530 and the second transfering node TX2 540 also can be formed by polysilicon or other materials.Different with the mode of Fig. 8, when the first transfering node TX1 530 and the second transfering node TX2 540 are formed by the material except polysilicon, between photogate 520 and transfering node TX1 530 and TX2 540, can not form the gap.When between photogate as shown in Figure 8 520 and transfering node TX1 530 and TX2 540 when very close to each other, electronics can be by more effectively demodulation.At shielded from light electric grid 520 but not during test section 510, the shielded metal 610 of Fig. 8 can have the configuration identical with the configuration of Fig. 5, yet different shield technologies is feasible.
The one FD node FD1 550 and the 2nd FD node FD2 560 can be corresponding to the accumulation nodes, and wherein, the electronics that is shifted by transfering node 530 and 540 is accumulated in the accumulation node.
In addition, should be noted that pixel 500 can improve electron transfer speed through using photogate 520.When increase was applied to the voltage of photogate 520, the electronics that the difference through latch voltage moves can be collected at photogate 520.In other words, photogate 520 can be with the storing predetermined time period of electronics of test section 510 generations.After electronics is collected at photogate 520; When being applied to the voltage of photogate 520 in reduction; When being applied to the voltage generation highfield of the first transfering node TX1 530 or the second transfering node TX2 540 through increase, electronics can be transferred to a FD node FD1 550 or the 2nd FD node FD2 560 fast.
Fig. 9 illustrates the electromotive force that on the test section of Fig. 5 510 and photogate 520, forms according to one or more embodiment.Figure 10 illustrates the electromotive force that on the demodulation part of Fig. 5, forms according to one or more embodiment.Particularly, the electromotive force shown in Fig. 9 and Figure 10 can be respectively formed on the test section 510 of Fig. 6 on the demodulation part with Fig. 8.Fig. 8, Fig. 9 and Figure 10 are schematically illustrated through each regional electrical potential difference mobile electron easily.The value of the electromotive force of Fig. 9 and Figure 10 increases downwards from reference value " 0 ".
In Fig. 9, V
P1, V
P2And V
P3Represent the electromotive force of n-layer N1 630, the electromotive force of n-layer N2 640 and the electromotive force of n-layer N3 650 respectively.In addition, V
PGThe electromotive force of expression photogate 520, and can be based on the voltage adjustment V that is applied to photogate 520
PG
In Figure 10, V
TX1The electromotive force of representing the first transfering node TX1 530, and can be based on the voltage adjustment V that is applied to the first transfering node TX1 530
TX1V
PGAnd V
TX2Represent the electromotive force of photogate 520 and the electromotive force of the second transfering node TX2 540 respectively, and can adjust V respectively based on voltage that is applied to photogate 520 and the voltage that is applied to the second transfering node TX2 540
PGAnd V
TX2In addition, V
FD1And V
FD2Represent the electromotive force of a FD node FD1 550 and the electromotive force of the 2nd FD node FD2 560 respectively.
Figure 11 and Figure 12 illustrate the example according to the method for the application drawing image-position sensor of one or more embodiment.Below, the method for the pixel of application drawing image-position sensor will be described with reference to Fig. 5 to Fig. 8, Figure 11 and Figure 12, it should be noted that embodiment is not limited thereto.In one or more embodiments, can pass through four time period t
1, t
2, t
3And t
4Realize said method.
With reference to Figure 11, at very first time section t
1, the electronics 1101 that is produced by test section 510 can be transferred to the front side of demodulation part.Particularly, at very first time section t
1, when the electromotive force of photogate 520 reduced, electronics 1101 can accumulate in before the photogate 520.Here, the electromotive force of photogate 520 is lower than the electromotive force of test section 510, thereby the respective electric field that electronics part 510 to be detected produces only is moved upwards up to before the photogate 520.
In addition, at very first time section t
1, at previous time period (for example, t
0) be stored in (for example, as shown in Figure 8) demodulation part electronics 1103 can through the second transfering node TX2 540 by demodulation.Particularly, at very first time section t
1, when the electromotive force in photogate 520 was lower than TX2 540 and is lower than FD2 560 potentially, when the electromotive force of the second transfering node TX2 540 increased, electronics 1103 can be through at least the second transfering node TX2 540 by demodulation.Electronics 1103 is illustrated with dotted line in Figure 11, to be illustrated in the time period t shown in Figure 11
1 Electronics 1103 is (for example, from time period t during this time
0) potential continued presence.Similarly, electronics 1101 is illustrated with dotted line in Figure 12, to be illustrated in the time period t that illustrates of Figure 12
3This electronics 1101 is (for example, from time period t during this time
2) potential continued presence.
At very first time section t
1, the electromotive force of photogate 520 can equal the electromotive force of the first transfering node TX1 530, and can be lower than the electromotive force of test section 510 and the electromotive force of the second transfering node TX2 540.Therefore, can be transferred to the front side of photogate 520 by electric field by the electronics 1101 that test section 510 produces, and can be accumulated in the 2nd FD node FD2 through the electronics 1103 that the second transfering node TX2 540 will be stored in the photogate.
In second time period t
2, voltage can be applied to the demodulation part, thereby at t
1The electronics 1101 that moves the front side of demodulation part can be stored in the demodulation part.Particularly, in second time period t
2, when the electromotive force of photogate 520 increases, and when the electromotive force reduction of the electromotive force of the first transfering node TX1 530 and the second transfering node TX2 540, electronics 1101 can be moved to photogate 520 by highfield.Here, the electromotive force of photogate 520 can be higher than the electromotive force of the first transfering node TX1 530 and the second transfering node TX2 540.Therefore, electronics 1101 can remain unchanged in photogate 520.In addition, even in second time period t
2, also can in the test section, produce new electronics 1102 by the light through reflection, and the electronics 1102 that produces also can be moved to photogate 520.
With reference to Figure 12, in the 3rd time period t
3, when the electromotive force of photogate 520 reduces, in the 3rd time period t
3The electronics 1201 that produces can be moved to the front side of photogate 520.
In the 3rd time period t
3, when the electromotive force of the first transfering node TX1 530 increases, in second time period t
2The electronics 1101 and 1102 that is stored in the photogate 520 can be accumulated in a FD node FD1 550 through the first transfering node TX1 530.In other words, in the 3rd time period t
3, the electromotive force of photogate 520 can equal the electromotive force of the second transfering node TX2 540, and can be lower than the electromotive force of test section 510 and the electromotive force of the first transfering node TX1 530.
In the 4th time period t
4, test section 510 and demodulation part can have with in second time period t
2The identical electromotive force of electromotive force.Therefore, in the 3rd time period t
3The electronics 1201 that moves to the front side of photogate 520 can be in the 4th time period t
4Accumulate in photogate 520.In addition, even in the 4th time period t
4, also can in the test section, produce electronics 1202 by the light through reflection, and the electronics 1202 that produces also can be moved to photogate 520.
The electromotive force that can be based on test section 510 in each time period is confirmed the electromotive force of photogate 520, the first transfering node TX1 530 and the second transfering node TX2 540, and is not limited thereto.For example, the electromotive force of photogate 520 can be reduced to except like the value Figure 11 and " 0 " shown in Figure 12.
Here, consider very first time section t
1Time period t before
0, when electronics 1103 is produced and is moved to photogate 520, four time period t
0-t
3, electronics 1103 is produced and is accumulated in FD2 560 through the second transfering node TX2 540, and electronics 1101 and 1102 is produced and is accumulated in FD 1550 through the first transfering node TX1 530.
The light time of receiving reflection in the pixel-by-pixel basis of imageing sensor can produce electronics.Particularly, for example, in the time period t of Figure 11 and Figure 12
1, t
2, t
3And t
4In with receive overlapping time period of time period of the light of reflection, can in test section 510, produce electronics.Although can be in the time period t of as above describing with reference to Figure 11 and Figure 12
1, t
2, t
3And t
4In each time period through the reflection light in test section 510, produce electronics, but this only is an example.Can be based on (for example with light; IR) shine destination object duration, apply distance between sequential, destination object and the imageing sensor etc. to the voltage of photogate 520, the first transfering node TX1 530 and the second transfering node TX2 540, confirm to receive the catoptrical time period whether with time period t
1, t
2, t
3And t
4In each is overlapping.
Figure 13 is illustrated in the sequential chart of the operation of the pixel shown in Figure 11 and Figure 12.As above said with reference to Figure 11 and Figure 12, all time period t
1, t
2, t
3And t
4All overlapping with the time period of the light that receives reflection.Yet, in Figure 13, very first time section t
1Part, the 3rd time period t
3The part and second time period t
2Overlapping with the time period of the light that receives reflection.
In Figure 13, suppose the light of IR for emission.Other detectable light also can be used as the light of emission.In addition, in demodulation scheme, can use sine wave, triangular wave and impulse wave, yet Figure 13 shows the simplest square wave.In other words, the light of emission or demodulation scheme can be not limited to the light or the demodulation scheme of the emission shown in Figure 13.
With reference to Figure 13, electronics receives that in the pixel-by-pixel basis of imageing sensor the time period 1301 and 1303 of the IR of reflection is produced.Here, the electronics that produces in the time period 1301 can be in the 3rd time period t
3Be transferred to a FD node FD1 550 through the first transfering node TX1 530.In addition, the electronics that produces in the time period 1303 can be in the 4th time period t
4TX2 afterwards is that high time period 1305 is (for example, in time period t
5) be transferred to the 2nd FD node FD2 560.In other words, can be proportional with the amount of the electronics of accumulation in a FD node FD1 550 or the 2nd FD node FD2 560 respectively among Figure 13 by the zone of hacures indication.Therefore, can be based on the zone of being indicated by hacures among the IR of reflection fathoms.Can change time period t through the voltage that adjustment is applied to photogate 520 and transfering node TX1 530 and TX2 540
1, t
2, t
3And t
4As stated, imageing sensor 400 can comprise the configuration such as the adjunct circuit configuration of carrying out such TOF analysis, and produces definite degree of depth respectively to one or more pixels.
Figure 14 and Figure 15 illustrate the electromotive force according to the pixel of the imageing sensor of one or more embodiment.With reference to Figure 14 and Figure 15, the pixel of imageing sensor can be divided into test section (as shown in Figure 6) and demodulation part (as shown in Figure 8), and voltage can be applied in test section and the demodulation part each, thereby even also can produce high electric field in low-voltage.For example, at first, form the electric field (Figure 14) of about 3V in the test section, then, reduce PG voltage in the demodulation part, thereby in the demodulation part, form the electric field (Figure 15) of about 3V once more.Therefore, when using pinned photodiode, still high electric field can be obtained, therefore, demodulation speed can be increased.
Figure 16 to Figure 19 illustrates the various modification according to the pixel of the imageing sensor of one or more embodiment.In Figure 16 to Figure 19, can use the test section of pinned photodiode as pixel.
For example, the first transfering node TX1 530 that can be through revising Fig. 5, the second transfering node TX2 540, a FD node FD1 550 and the size of the 2nd FD node FD2 560 and the pixel that the position forms Figure 16.In Fig. 5; Photogate 520 can be formed on a side of test section 510, and the first transfering node TX1 530 and the second transfering node TX2 540 can be respectively formed between a photogate 520 and the FD node FD1 550 and between photogate 530 and the 2nd FD node FD2 560.In addition, the first transfering node TX1 530 can be in the face of a side of photogate 520, and the second transfering node TX2 540 can be in the face of the opposition side of photogate 520.
With reference to Figure 16, transfering node TX1 1630 and TX2 1640 can in series arrange with photogate 1620.Particularly; Transfering node TX1 1630 and TX2 1640 can be formed in the face of (for example being formed with the test section; On the surface on surface pinned photodiode 1610), photogate 1620 can be between pinned photodiode and transfering node TX1 1630 and TX2 1640.With reference to Figure 17 and Figure 19, transfering node TX1 1730,1790 and TX2 1740,1940 are arranged in two ends or the side of photogate 1720,1920.When transfering node TX1 1630 in series arranges with photogate 1620 with TX2 1640 (shown in figure 16), can increase the contact area between photogate 1620 and transfering node TX1 1630 and the TX2 1640.Along with the increase of the contact area between photogate 1620 and transfering node TX1 1630 and the TX2 1640, more effectively metastatic electron.Here, for example, can transfer an electron to the speed of FD node FD1 1650 and FD2 1660 based on the size adjustment of transfering node TX1 1630 and TX2 1640.
In Figure 16, FD node FD1 1650 and FD2 1660 and photogate 1620 and transfering node TX1 1630 in series arrange with TX2 1640.When FD node FD1 1650 in series arranges with transfering node TX1 1630 and TX2 1640 with FD2 1660 (shown in figure 16), can increase the contact area between transfering node TX1 1630 and TX2 1640 and FD node FD1 1650 and the FD2 1660.In Figure 19, FD node FD1 1950 and FD2 1960 are arranged in end or the side of transfering node TX1 1930 and TX2 1940.
The one FD node FD1 550 and the size of the 2nd FD node FD2 560 and the pixel that the position forms Figure 17 of shape that can be through revising test section 510 (for example, pinned photodiode) or geometry and the pixel 500 through revising Fig. 5.The geometry of the pinned photodiode 1610 among Figure 16 or shape will be considered to common, and here, Figure 17 to Figure 19 comprises the pinned photodiode 1710,1810 and 1910 with different geometric structure or shape.Here, although perhaps geometry is different, yet in one or more embodiments, the various aspects of the variable locking voltage of describing in conjunction with Fig. 6 will be used in Figure 16 to Figure 19.
With reference to Figure 17, along with photogate 1720 become near, can reduce the width of pinned photodiode 1710.Become along with photogate 1720 near and when reducing the width of pinned photodiode 1710, can reduce the size of photogate 1720, thereby the power consumption can reduce pixel operation the time.In Figure 17, FD node FD1 1750 and FD2 1760 in series arrange with photogate 1720.
The shape of the test section (for example, pinned photodiode 1610) of pixel that for example, can be through revising Figure 16 forms the pixel of Figure 18.Particularly, along with photogate 1820 become near, can increase the width of the pinned photodiode 1810 of Figure 18.In this example, along with photogate 1820 become near, can flatly increase the n-layer of pinned photodiode 1810, thereby can increase latch voltage, improve transfer velocity thus.In one embodiment, in Figure 18, transfering node TX1 1830 and TX2 1840 and FD node FD1 1850 can have same or analogous structure with transfering node and the FD node of Figure 16 with FD2 1860.
The shape of the test section 510 (for example, pinned photodiode) of pixel 500 that for example, can be through revising Fig. 5 forms the pixel of Figure 19.In one embodiment, the pinned photodiode 1910 of Figure 19 can have same or analogous structure with the pinned photodiode 1710 of Figure 17.In one embodiment; In Figure 19; Transfering node TX1 1930 and TX2 1940 can have same or analogous structure with the transfering node of Figure 17, and FD node FD1 1950 can be arranged to along end or the side of transfering node TX1 1930 and TX2 1940 with FD2 1960 has bigger surface area.
To shown in Figure 19, can change the position of photogate, transfering node and FD node like Figure 16, also can carry out various changes the shape of test section.Therefore, can be based on all size of the pixel of imageing sensor and/or imageing sensor, wait position and the shape of revising photogate, transfering node and FD node to demodulation speed, quantum efficiency, the volumetric efficiency of for example expectation.
In one or more embodiments, the imageing sensor 400 of Fig. 4 be the representative of single pixel, representative, each pixel in a plurality of pixels in the imageing sensor with one or more pixels of correlated-double-sampling part representative, or have the representative of the depth measurement device of the depth survey unit that is used to explain the information that provides by imageing sensor or single pixel.In one or more embodiments, single pixel and imageing sensor also can be configured to detect the light that is used for monochrome or coloured image with common mode.Similarly, imageing sensor 400 can be camera supervisory control system, Motion Recognition system, robotic vision system, have distance identification vehicle, or separate the representative of camera system of prospect and the background of observation based on depth information.For example, can calculate the above-mentioned TOF that describes with reference to Fig. 4 through imageing sensor and analyze, perhaps by (for example, in the camera apparatus) processor output with analyze the above-mentioned TOF that describes with reference to Fig. 4 and analyze.One or more embodiment comprise such camera apparatus with such processor and imageing sensor and method of operation thereof.As stated, the imageing sensor 400 of description is formed by substrate (substrate that for example, has specific N and P part).In one or more embodiments, imageing sensor 400 and pixel thereof are cmos image sensor (CIS).
In one or more embodiments, equipment described herein, system and unit can comprise one or more hardware handles elements.For example, the unit of each description can comprise one or more treatment elements, the memory of expectation and any desired hardware I/O transmitting device of carrying out the operation of describing.
Except above-described embodiment; Also can through in the nonvolatile medium (for example, computer readable recording medium storing program for performing)/on computer readable code/instructions realize embodiment, (for example to control at least one processing unit; Processor or computer), realize above-described any embodiment.Said medium can be corresponding to any qualification, the measurable and real structure that allow storage and/transmission computer-readable code.
Said medium for example also can comprise the combination with computer-readable code, data file, data structure etc.One or more embodiment of computer-readable medium comprise: magnetizing mediums (for example; Hard disk, floppy disk and tape), the light medium (for example; CD ROM dish and DVD), magnet-optical medium (for example; CD), be configured to especially store and the hardware unit (for example, read-only memory (ROM), random-access memory (ram), flash memory etc.) of execution of program instructions.Computer-readable code for example can comprise such as the machine code that produces by compiler with comprise the file that can use the high-level code that interpreter carries out by computer.Said medium can also be a distributed network, thereby stores and computer readable code executed with distributed way.In addition, only as an example, treatment element can comprise processor or computer processor, and treatment element can distribute and/or be included in the single assembly.
Can also carry out realization computer-readable medium in application-specific integrated circuit (ASIC) (ASIC) or the field programmable gate array (FPGA) of (handle) program command at least one as processor.
Although specifically show and described various aspects of the present invention, should be appreciated that these embodiment should only be thought describing significance and unrestricted purpose with reference to different embodiments of the invention.The characteristic in each embodiment or the description of aspect should be considered to can be used for other similar characteristics or the aspect among other embodiment usually.If if carry out that assembly in technology of describing and/or system, framework, device or the circuit of describing is combined in a different manner and/or by other assemblies or the replacement of their equivalent or replenish, then can realize suitable results equally with different order.
Therefore; Although shown and described several embodiment together with same available additional embodiments; But it should be appreciated by those skilled in the art; Under the situation that does not break away from principle of the present invention and spirit, can change these embodiments, scope of the present invention is limited claim and equivalent thereof.
Claims (39)
1. imageing sensor, at least one pixel of said imageing sensor comprises:
The test section is used to shift the electronics that the test section produces after receiving light, and the test section comprises a plurality of doped regions with variable locking voltage in the test section, applying electric field, thereby to the demodulation part of said pixel metastatic electron;
The demodulation part is used at least one node metastatic electron, to accumulate one or more electronics.
2. imageing sensor as claimed in claim 1, wherein, said pixel is configured to apply another electric field, and said another electric field makes electronics pass through the demodulation part and shifts to said at least one node, to accumulate one or more electronics.
3. imageing sensor as claimed in claim 1; Wherein, said a plurality of doped regions comprise a plurality of n-layers respectively, wherein; Along with each the n-layer in said a plurality of n-layers is configured to the closer to the demodulation part, the latch voltage separately of each the n-layer in said a plurality of n-layers is high more.
4. imageing sensor as claimed in claim 3, wherein, the latch voltage separately of each the n-layer in said a plurality of n-layers is also based on separately doping content.
5. imageing sensor as claimed in claim 1, wherein, said a plurality of doped regions comprise a plurality of n-layers respectively, wherein, the latch voltage separately of each the n-layer in said a plurality of n-layers is based on separately doping content or junction depth.
6. imageing sensor as claimed in claim 1; Wherein, said a plurality of doped regions comprise a plurality of p-layers respectively, wherein; Along with each the p-layer in said a plurality of p-layers is configured to the closer to the demodulation part, the latch voltage separately of each the p-layer in said a plurality of p-layers is high more.
7. imageing sensor as claimed in claim 6, wherein, the latch voltage separately of each the p-layer in said a plurality of p-layers is also based on separately doping content.
8. imageing sensor as claimed in claim 1, wherein, said a plurality of doped regions comprise a plurality of p-layers respectively, wherein, the latch voltage separately of each the p-layer in said a plurality of p-layers is based on separately doping content or junction depth.
9. imageing sensor as claimed in claim 1 wherein, comes the configuration detection part with pinned photodiode, and pinned photodiode comprises a plurality of doped regions.
10. imageing sensor as claimed in claim 1 also comprises: photogate is used to receive the electronics that part to be detected shifts to the demodulation part.
11. imageing sensor as claimed in claim 10, wherein, photogate is included in the demodulation part.
12. imageing sensor as claimed in claim 10, wherein, the photogate conductively-closed is to the reception of light.
13. imageing sensor as claimed in claim 10; Wherein, Said pixel is configured to feasible: the applying of another electric field of the change of the electromotive force of photogate control demodulation part, said another electric field makes the electronics that receives shift to accumulate one or more electronics to said at least one node from photogate.
14. imageing sensor as claimed in claim 10, wherein, said pixel is configured to feasible: in very first time section, the electromotive force of photogate is lower than the electromotive force of test section and the electromotive force of first transfering node; Second time period after following very first time section closely, the electromotive force of photogate is higher than the electromotive force of test section and the electromotive force of first transfering node.
15. imageing sensor as claimed in claim 14; Wherein, Said pixel also is configured to feasible: the 3rd time period after following for second time period closely; The electromotive force of photogate is lower than the electromotive force of test section and the electromotive force of second transfering node, makes in the 3rd time period, and the electromotive force of the photogate and first transfering node can not cause the electronics of photogate storage to be transferred to first transfering node; And make that in the 3rd time period the electromotive force of the photogate and second transfering node causes the electronics of photogate storage to be transferred to second transfering node.
16. imageing sensor as claimed in claim 14; Wherein, Said pixel also is configured to feasible: in second time period; The electromotive force of photogate and the electromotive force of test section cause electronics to transfer to photogate from the test section, and the electromotive force of photogate and the electromotive force of first transfering node cause electronics can not be transferred to first transfering node simultaneously.
17. imageing sensor as claimed in claim 14; Wherein, Said pixel also is configured to feasible: in very first time section; The electromotive force of photogate and the electromotive force of test section cause electronics within the test section to the test section near the edge transitions of photogate and can not stored by photogate, and in very first time section, the electromotive force of the electromotive force of photogate and first transfering node causes the electronics of photogate storage to be transferred to first transfering node.
18. imageing sensor as claimed in claim 14; Wherein, said pixel also is configured to feasible: when in second time period, when the electromotive force of photogate is higher than first transfering node and second transfering node; In second time period; The electronics that photogate storage receives and can be with any one in first transfering node and second transfering node of the electron transfer of storage, wherein, second transfering node is configured to from the photogate metastatic electron.
19. imageing sensor as claimed in claim 14; Wherein, Said pixel also is configured to feasible: the electronics that before very first time section, is stored in the photogate moves to first transfering node in very first time section, and the electronics that part to be detected shifts to the demodulation part moves to photogate in second time period.
20. an imageing sensor, this imageing sensor has at least one pixel, and said pixel comprises:
The demodulation part is carried out demodulation through at least one transfering node to the electronics of storing, and the electronics of said storage was stored in the demodulation part before very first time section;
The test section; Be used in very first time section the front side of the electron transfer that produces to the demodulation part; When receiving the electronics that the light time test section produces said generation in very first time section, wherein, said pixel is configured in second time period electronics that shifts moved to the demodulation part.
21. imageing sensor as claimed in claim 20; Said pixel is configured to feasible: in very first time section; The electromotive force of test section applies drift force so that the electron transfer that produces is arrived the front side of demodulating unit at least; In second time period; At least the electromotive force of test section applies the drift force that is used for the electronics that shifts is moved to the memory of demodulation part, and during second time period, stops at least one electromotive force of the demodulation part of second time period to apply drift force with the electron transfer of storage at least one transfering node in the demodulation part.
22. imageing sensor as claimed in claim 20, wherein, said pixel is configured to during very first time section, the electronics of storing moved to said at least one transfering node.
23. imageing sensor as claimed in claim 20, wherein, the test section comprises a plurality of doped regions, and the latch voltage of each doped region in said a plurality of doped regions is based on separately doping content or junction depth.
24. imageing sensor as claimed in claim 20 wherein, comes the configuration detection part with pinned photodiode, pinned photodiode comprises a plurality of doped regions.
25. imageing sensor as claimed in claim 24, wherein, pinned photodiode has the geometry that narrows down towards the demodulation part.
26. imageing sensor as claimed in claim 24, wherein, pinned photodiode has the geometry that broadens towards the demodulation part.
27. imageing sensor as claimed in claim 20, wherein, the demodulation part comprises photogate.
28. the method for an application drawing image-position sensor, said imageing sensor comprises at least one pixel, and said pixel comprises: the test section is used for producing electronics when receiving the light time; The demodulation part is used for the electronics that produces is carried out demodulation and comprises first transfering node and second transfering node, and said method comprises:
The electromotive force of control detection part is to shift the electronics that produces to the demodulation part;
Electromotive force in the control pixel is so that the electronics that produces is stored predetermined amount of time;
The electromotive force of control demodulation part is so that the electronics of storage is transferred to first transfering node after said predetermined amount of time.
29. method as claimed in claim 28 also comprises:
Electromotive force in the control pixel is so that the other electronics that produces is stored said predetermined amount of time;
At least one electromotive force of control demodulation part so that the other electronics of storage is transferred to second transfering node after said predetermined amount of time, and makes the other electronics of storage after said predetermined amount of time, not be transferred to first transfering node.
30. method as claimed in claim 29 also comprises:
First electronics of first transfering node is transferred in accumulation, and second electronics of second transfering node is transferred in accumulation;
First electronics of accumulation and second electronics of accumulation are compared, and confirm the flight time of said light.
31. be used to control the nonvolatile medium of at least one processing unit with the computer-readable code of the described method of realization claim 29 at least a comprising.
32. the method for an application drawing image-position sensor, said imageing sensor comprises at least one pixel, and said pixel comprises: the test section is used for producing electronics when receiving the light time; The demodulation part is used for the electronics that produces is carried out demodulation, and the demodulation part comprises photogate, first transfering node and second transfering node, and said method comprises:
In very first time section, the electronics that the test section is produced is stored in the photogate;
Second time period after following very first time section closely, the electronics that is stored in the photogate is carried out demodulation through one of first transfering node and second transfering node.
33. method as claimed in claim 32; Wherein, The step of storing in very first time section comprises: electromotive force and the electromotive force of first transfering node and the electromotive force of second transfering node of photogate are set, so that the electromotive force of photogate is higher than the electromotive force of first transfering node and the electromotive force of second transfering node.
34. method as claimed in claim 32; Wherein, The step of carrying out demodulation in second time period comprises: the electromotive force of photogate and the electromotive force of one of first transfering node and second transfering node are set, so that the electromotive force of one of said first transfering node and second transfering node is higher than the electromotive force of photogate.
35. method as claimed in claim 32; Also comprise: the electromotive force of control photogate is lower than the electromotive force of test section and the electromotive force of second transfering node; Control the electronics that the electromotive force of first transfering node makes the electromotive force of the photogate and first transfering node can not cause storing simultaneously and be transferred to first transfering node, and the electromotive force of the control photogate and second transfering node is so that the electronics of the storage of being stored is transferred to second transfering node.
36. method as claimed in claim 32; Also comprise: the electromotive force of control photogate and the electromotive force of test section; So that the electronics that the test section produces is transferred to photogate from the test section, control the electromotive force of first transfering node and second transfering node simultaneously so that the electronics of storage can not be transferred to any one in first transfering node and second transfering node.
37. method as claimed in claim 32; Also comprise: the electromotive force of electromotive force and the test section of control photogate so that the electronics that the test section produces within the test section to the test section near the edge transitions of photogate and can not move to photogate, the electromotive force of electromotive force and first transfering node of controlling photogate simultaneously is so that the electronics of storing is transferred to first transfering node.
38. method as claimed in claim 32; Also comprise: the electromotive force of control photogate is higher than the electromotive force of first transfering node and the electromotive force of second transfering node, is transferred to any one in first transfering node and second transfering node with the electronics of the storage that stops photogate.
39. be used to control the nonvolatile medium of at least one processing unit with the computer-readable code of the described method of realization claim 32 at least a comprising.
Applications Claiming Priority (3)
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| KR1020100013111A KR20110093212A (en) | 2010-02-12 | 2010-02-12 | Pixel of an image sensor and operating method for the pixel |
| KR10-2010-0013111 | 2010-02-12 | ||
| PCT/KR2011/000847 WO2011099759A2 (en) | 2010-02-12 | 2011-02-09 | Image sensor and operating method |
Publications (1)
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| CN102449766A true CN102449766A (en) | 2012-05-09 |
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| CN2011800023169A Pending CN102449766A (en) | 2010-02-12 | 2011-02-09 | Image sensor and operating method |
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| US (1) | US20110198481A1 (en) |
| EP (1) | EP2534688A4 (en) |
| JP (1) | JP2013520006A (en) |
| KR (1) | KR20110093212A (en) |
| CN (1) | CN102449766A (en) |
| WO (1) | WO2011099759A2 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20110093212A (en) | 2011-08-18 |
| EP2534688A4 (en) | 2014-07-23 |
| JP2013520006A (en) | 2013-05-30 |
| US20110198481A1 (en) | 2011-08-18 |
| WO2011099759A2 (en) | 2011-08-18 |
| EP2534688A2 (en) | 2012-12-19 |
| WO2011099759A3 (en) | 2011-11-24 |
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Application publication date: 20120509 |