CN102443833A - Nb2O5 nano-grade porous membrane and preparation method thereof - Google Patents
Nb2O5 nano-grade porous membrane and preparation method thereof Download PDFInfo
- Publication number
- CN102443833A CN102443833A CN2011103965900A CN201110396590A CN102443833A CN 102443833 A CN102443833 A CN 102443833A CN 2011103965900 A CN2011103965900 A CN 2011103965900A CN 201110396590 A CN201110396590 A CN 201110396590A CN 102443833 A CN102443833 A CN 102443833A
- Authority
- CN
- China
- Prior art keywords
- nano
- porous
- film
- porous films
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Inert Electrodes (AREA)
Abstract
The invention discloses a Nb2O5 nano-grade porous membrane which is a self-sustaining Nb2O5 nano-grade porous membrane with a specific surface area no less than 15m<2>/g, or a Nb2O5 nano-grade porous membrane attached on a Nb substrate, wherein the specific surface area of the membrane is no less than 15m<2>/g. Also, the invention discloses a preparation method of the Nb2O5 nano-grade porous membrane. The preparation method provided by the invention is simple, and operations are convenient and reasonably designed. The prepared Nb2O5 nano-grade porous membrane has excellent optical properties such as low optical waveguide loss and high ultraviolet absorbing capacity. Therefore, the membrane can be used in protective membranes of waveguide devices and ultraviolet-sensitive materials. Meanwhile, the membrane can be used in fields of gas sensors, catalysts, and dye-sensitized solar cells.
Description
Technical field
The invention belongs to the mould material preparing technical field, be specifically related to a kind of Nb
2O
5Nano-porous films and preparation method thereof.
Background technology
Along with science and technology development, niobium oxides is more and more wider in the application in fields such as metallurgy, electronics, glass, has promoted China Nb effectively
2O
5Increasing rapidly of throughput.Nb
2O
5Film has excellent optical property, and its optical waveguide loss is little, in waveguide property device, has obtained bigger application; It has stronger uv-absorbing ability simultaneously, can be used as the protective membrane of ultraviolet sensitivity material, with SiO
2Can prepare film Deng mixing with different refractivity.Nb in recent years
2O
5Film has also caused investigator's interest as a kind of electrochromic material of excellent property.
Preparation Nb
2O
5The method of film is a lot, is used to prepare Nb at first
2O
5The method of film is a thermal oxidation method, comprises that and then modern crafts such as magnetically controlled DC sputtering, radio-frequency sputtering, chemical vapour deposition, electrochemistry anodic oxidation, electrochemical deposition, sol-gel method and pulsed laser deposition successively are used for Nb
2O
5The preparation of film, the Nb of these method preparations
2O
5Film all have preferably lithium ion embed extraction performance, its discoloration and preparation method and technology have substantial connection.
Electrochemistry anodic oxidation is the high-new manufacturing technology of a kind of inorganic materials, uses the material character of this method preparation and evenly and easily controls, and need not expensive equipment; Temperature of reaction is low, and purity is high, and process is simple to operation; Cost is low, and preparation is easy to film forming during film, and processing parameters such as composition that can be through regulating electrolytic solution, oxidizing temperature are controlled the microtexture of film easily; Can on the matrix of random shape, obtain nano-porous films, be easy to realize continuous batch production, be suitable for industrial production; Therefore have realistic meaning, received and paid attention to widely and use.
Yet, adopt electrochemistry anodic oxidation to prepare Nb
2O
5The report of nano-porous films seldom and adopts this method at H
2SO
4Can't obtain unsupported Nb in the electrolytic solution of+HF
2O
5Nano-porous films, the thickness of film is less than 0.5 μ m simultaneously.Therefore, seriously limited Nb
2O
5The research of nano-porous films and application.
Summary of the invention
Technical problem to be solved by this invention is the deficiency to above-mentioned prior art, and a kind of excellent optical property that has is provided, and the optical waveguide loss is little, and the Nb of stronger uv-absorbing ability is arranged
2O
5Nano-porous films.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of Nb
2O
5Nano-porous films is characterized in that, said Nb
2O
5Nano-porous films is that specific surface area is not less than 15m
2The unsupported Nb of/g
2O
5Nano-porous films is perhaps for to be not less than 15m attached to the specific surface area on the Nb matrix
2The Nb of/g
2O
5Nano-porous films.
Above-mentioned a kind of Nb
2O
5Nano-porous films, said attached to the Nb on the Nb matrix
2O
5The thickness of nano-porous films is 0.05 μ m~150 μ m, said unsupported Nb
2O
5The thickness of nano-porous films is 0.5 μ m~150 μ m.
Above-mentioned a kind of Nb
2O
5Nano-porous films, said Nb
2O
5The aperture of nano-porous films is not less than 5nm, and pitch of holes is not less than 3nm.
The present invention also provides a kind of Nb
2O
5The preparation method of nano-porous films is characterized in that, this method may further comprise the steps:
Step 1, with thickness be the Nb sheet of 50 μ m~300 μ m with carborundum paper polishing light, the Nb sheet after will polishing then cleans up, and dries for use;
Step 2, with anhydrous organic reagent and ydrogen peroxide 50 or water according to 95~99: 1~5 volume ratio uniform mixing makes mixed solvent, fluorochemical is added in the mixed solvent to stir then, obtains the electrolytic solution that fluorinion concentration is 0.2mol/L~2mol/L;
Step 3, with in the step 1 oven dry after the Nb sheet place electrolytic solution described in the step 2 as anode; As negative electrode, utilize direct supply antianode Nb sheet to carry out anodic oxidation with platinum electrode, oxidation voltage is 5V~30V; Oxidizing temperature is 10 ℃~40 ℃, and oxidization time is 0.5h~28h;
Step 4, the Nb sheet behind electrolytic oxidation in the step 3 is taken out and uses washed with de-ionized water, after the drying, obtain attached to the porous-film on the Nb matrix;
Step 5, with placing retort furnace to carry out anneal attached to the porous-film on the Nb matrix described in the step 4, obtain attached to the Nb on the Nb matrix
2O
5Nano-porous films; Perhaps, the Nb matrix is separated with porous-film, obtain unsupported porous-film, place retort furnace to carry out anneal unsupported porous-film then, obtain unsupported Nb adopting mechanical means to peel off attached to the porous-film on the Nb matrix described in the step 4
2O
5Nano-porous films.
Anhydrous organic reagent described in the above-mentioned steps two is one or more in terepthaloyl moietie, USP Kosher, methyl alcohol, methane amide and the methyl-sulphoxide.
Fluorochemical described in the above-mentioned steps two is HF or NH
4F.
The system of anneal is described in the above-mentioned steps five: 300 ℃~1400 ℃ of annealing temperatures, soaking time 0.5h~6h.
The present invention compared with prior art has the following advantages:
1, preparation method of the present invention is simple, and is easy and simple to handle and reasonable in design.
2, adopt the inventive method can prepare the Nb that thickness is 0.05 μ m~150 μ m
2O
5Nano-porous films, the Nb of preparation
2O
5The nano-porous films specific surface area is not less than 15m
2/ g, the aperture is not less than 5nm, and pitch of holes is not less than 3nm.
3, adopt the Nb of the inventive method preparation
2O
5Nano-porous films has excellent optical property; Its optical waveguide loss is little, and stronger uv-absorbing ability is arranged, and can be widely used in the protective membrane of waveguide property device and ultraviolet sensitivity material; Simultaneously can also be applied to fields such as gas sensor, catalyzer and dye sensitization solar battery.
Through embodiment, technical scheme of the present invention is done further to describe in detail below.
Embodiment
Embodiment 1
Step 1, be that to be machined into area be 80cm for the Nb sheet of 300 μ m with thickness
2Rectangular pieces, the Nb sheet after then will processing is with carborundum paper polishing light, the Nb sheet after will polishing then cleans up, and dries for use;
Step 2, USP Kosher and ydrogen peroxide 50 are made mixed solvent according to 98: 2 volume ratio uniform mixing, HF is added in the mixed solvent stir then, obtain the electrolytic solution that fluorinion concentration is 0.5mol/L;
Step 3, with in the step 1 oven dry after the Nb sheet place electrolytic solution described in the step 2 as anode, as negative electrode, utilize direct supply antianode Nb sheet to carry out anodic oxidation with platinum electrode, oxidation voltage is 9V, oxidizing temperature is 20 ℃, oxidization time is 2h;
Step 4, the Nb sheet behind electrolytic oxidation in the step 3 is taken out and uses washed with de-ionized water, after the drying, obtain attached to the porous-film on the Nb matrix;
Step 5, with adopting mechanical means to peel off attached to the porous-film on the Nb matrix described in the step 4; The Nb matrix is separated with porous-film; Obtain unsupported porous-film, place retort furnace to carry out anneal unsupported porous-film then, obtain specific surface area and be not less than 15m
2/ g, thickness are 0.5 μ m, and the aperture is not less than 5nm, and pitch of holes is not less than the unsupported Nb of 3nm
2O
5Nano-porous films; The system of said anneal is: 500 ℃ of annealing temperatures, soaking time 2h.
Embodiment 2
Present embodiment is identical with embodiment 1, and wherein difference is: used anhydrous organic reagent is terepthaloyl moietie, methyl alcohol, methane amide or methyl-sulphoxide, perhaps is at least two kinds in terepthaloyl moietie, USP Kosher, methyl alcohol, methane amide and the methyl-sulphoxide.
Embodiment 3
Step 1, be that to be machined into area be 20cm for the Nb sheet of 100 μ m with thickness
2Disk, the Nb sheet after then will processing is with carborundum paper polishing light, the Nb sheet after will polishing then cleans up, and dries for use;
Step 2, terepthaloyl moietie and water are made mixed solvent according to 98: 2 volume ratio uniform mixing, HF is added in the mixed solvent stir then, obtain the electrolytic solution that fluorinion concentration is 1mol/L;
Step 3, with in the step 1 oven dry after the Nb sheet place electrolytic solution described in the step 2 as anode, as negative electrode, utilize direct supply antianode Nb sheet to carry out anodic oxidation with platinum electrode, oxidation voltage is 19V, oxidizing temperature is 28 ℃, oxidization time is 5h;
Step 4, the Nb sheet behind electrolytic oxidation in the step 3 is taken out and uses washed with de-ionized water, after the drying, obtain attached to the porous-film on the Nb matrix;
Step 5, with adopting mechanical means to peel off attached to the porous-film on the Nb matrix described in the step 4; The Nb matrix is separated with porous-film; Obtain unsupported porous-film, place retort furnace to carry out anneal unsupported porous-film then, obtain specific surface area and be not less than 15m
2/ g, thickness are 50 μ m, and the aperture is not less than 5nm, and pitch of holes is not less than the unsupported Nb of 3nm
2O
5Nano-porous films; The system of said anneal is: 700 ℃ of annealing temperatures, soaking time 1h.
Embodiment 4
Present embodiment is identical with embodiment 3, and wherein difference is: used anhydrous organic reagent is USP Kosher, methyl alcohol, methane amide or methyl-sulphoxide, perhaps is at least two kinds in terepthaloyl moietie, USP Kosher, methyl alcohol, methane amide and the methyl-sulphoxide.
Embodiment 5
Step 1, be that to be machined into area be 1cm for the Nb sheet of 50 μ m with thickness
2Disk, the Nb sheet after then will processing is with carborundum paper polishing light, the Nb sheet after will polishing then cleans up, and dries for use;
Step 2, methyl alcohol and water are made mixed solvent according to 99: 1 volume ratio uniform mixing, HF is added in the mixed solvent stir then, obtain the electrolytic solution that fluorinion concentration is 0.2mol/L;
Step 3, with in the step 1 oven dry after the Nb sheet place electrolytic solution described in the step 2 as anode, as negative electrode, utilize direct supply antianode Nb sheet to carry out anodic oxidation with platinum electrode, oxidation voltage is 5V, oxidizing temperature is 20 ℃, oxidization time is 0.5h;
Step 4, the Nb sheet behind electrolytic oxidation in the step 3 is taken out and uses washed with de-ionized water, after the drying, obtain attached to the porous-film on the Nb matrix;
Step 5, with placing retort furnace to carry out anneal attached to the porous-film on the Nb matrix described in the step 4, obtain specific surface area and be not less than 15m
2/ g, thickness are 0.05 μ m, and the aperture is not less than 5nm, pitch of holes be not less than 3nm attached to the Nb on the Nb matrix
2O
5Nano-porous films; The system of said anneal is: 300 ℃ of annealing temperatures, soaking time 6h.
Embodiment 6
Present embodiment is identical with embodiment 5, and wherein difference is: used anhydrous organic reagent is terepthaloyl moietie, USP Kosher, methane amide or methyl-sulphoxide, perhaps is at least two kinds in terepthaloyl moietie, USP Kosher, methyl alcohol, methane amide and the methyl-sulphoxide.
Embodiment 7
Step 1, be that to be machined into area be 80cm for the Nb sheet of 100 μ m with thickness
2Rectangular pieces, the Nb sheet after then will processing is with carborundum paper polishing light, the Nb sheet after will polishing then cleans up, and dries for use;
Step 2, methane amide and water are made mixed solvent according to 95: 5 volume ratio uniform mixing, then with NH
4Stir in the F adding mixed solvent, obtain the electrolytic solution that fluorinion concentration is 2mol/L;
Step 3, with in the step 1 oven dry after the Nb sheet place electrolytic solution described in the step 2 as anode, as negative electrode, utilize direct supply antianode Nb sheet to carry out anodic oxidation with platinum electrode, oxidation voltage is 30V, oxidizing temperature is 10 ℃, oxidization time is 10h;
Step 4, the Nb sheet behind electrolytic oxidation in the step 3 is taken out and uses washed with de-ionized water, after the drying, obtain attached to the porous-film on the Nb matrix;
Step 5, with placing retort furnace to carry out anneal attached to the porous-film on the Nb matrix described in the step 4, obtain specific surface area and be not less than 15m
2/ g, thickness are 100 μ m, and the aperture is not less than 5nm, pitch of holes be not less than 3nm attached to the Nb on the Nb matrix
2O
5Nano-porous films; The system of said anneal is: 300 ℃ of annealing temperatures, soaking time 6h.
Embodiment 8
Present embodiment is identical with embodiment 7, and wherein difference is: used anhydrous organic reagent is terepthaloyl moietie, USP Kosher, methyl alcohol or methyl-sulphoxide, perhaps is at least two kinds in terepthaloyl moietie, USP Kosher, methyl alcohol, methane amide and the methyl-sulphoxide.
Embodiment 9
Step 1, be that to be machined into area be 50cm for the Nb sheet of 300 μ m with thickness
2Rectangular pieces, the Nb sheet after then will processing is with carborundum paper polishing light, the Nb sheet after will polishing then cleans up, and dries for use;
Step 2, methyl-sulphoxide and water are made mixed solvent according to 95: 5 volume ratio uniform mixing, HF is added in the mixed solvent stir then, obtain the electrolytic solution that fluorinion concentration is 0.7mol/L;
Step 3, with in the step 1 oven dry after the Nb sheet place electrolytic solution described in the step 2 as anode, as negative electrode, utilize direct supply antianode Nb sheet to carry out anodic oxidation with platinum electrode, oxidation voltage is 20V, oxidizing temperature is 40 ℃, oxidization time is 28h;
Step 4, the Nb sheet behind electrolytic oxidation in the step 3 is taken out and uses washed with de-ionized water, after the drying, obtain attached to the porous-film on the Nb matrix;
Step 5, with adopting mechanical means to peel off attached to the porous-film on the Nb matrix described in the step 4; The Nb matrix is separated with porous-film; Obtain unsupported porous-film, place retort furnace to carry out anneal unsupported porous-film then, obtain specific surface area and be not less than 15m
2/ g, thickness are 150 μ m, and the aperture is not less than 5nm, pitch of holes be not less than 3nm attached to the Nb on the Nb matrix
2O
5Nano-porous films; The system of said anneal is: 1400 ℃ of annealing temperatures, soaking time 0.5h.
Embodiment 10
Present embodiment is identical with embodiment 9, and wherein difference is: used anhydrous organic reagent is terepthaloyl moietie, USP Kosher, methyl alcohol or methane amide, perhaps is at least two kinds in terepthaloyl moietie, USP Kosher, methyl alcohol, methane amide and the methyl-sulphoxide.
Embodiment 11
Step 1, be that to be machined into area be 60cm for the Nb sheet of 300 μ m with thickness
2Disk, the Nb sheet after then will processing is with carborundum paper polishing light, the Nb sheet after will polishing then cleans up, and dries for use;
Step 2, terepthaloyl moietie, USP Kosher and water are made mixed solvent according to 40: 57: 3 volume ratio uniform mixing, then with NH
4Stir in the F adding mixed solvent, obtain the electrolytic solution that fluorinion concentration is 1.2mol/L;
Step 3, with in the step 1 oven dry after the Nb sheet place electrolytic solution described in the step 2 as anode, as negative electrode, utilize direct supply antianode Nb sheet to carry out anodic oxidation with platinum electrode, oxidation voltage is 20V, oxidizing temperature is 10 ℃, oxidization time is 28h;
Step 4, the Nb sheet behind electrolytic oxidation in the step 3 is taken out and uses washed with de-ionized water, after the drying, obtain attached to the porous-film on the Nb matrix;
Step 5, with placing retort furnace to carry out anneal attached to the porous-film on the Nb matrix described in the step 4, obtain specific surface area and be not less than 15m
2/ g, thickness are 150 μ m, and the aperture is not less than 5nm, pitch of holes be not less than 3nm attached to the Nb on the Nb matrix
2O
5Nano-porous films; The system of said anneal is: 1000 ℃ of annealing temperatures, soaking time 3h.
Embodiment 12
Present embodiment is identical with embodiment 11; Wherein difference is: used anhydrous organic reagent is a kind of in terepthaloyl moietie, USP Kosher, methyl alcohol, methane amide and the methyl-sulphoxide or more than three kinds; Perhaps being two kinds in USP Kosher, methyl alcohol, methane amide and the methyl-sulphoxide, perhaps is the mixture of a kind of and terepthaloyl moietie in methyl alcohol, methane amide or the methyl-sulphoxide.
Embodiment 13
Step 1, be that to be machined into area be 50cm for the Nb sheet of 50 μ m with thickness
2Disk, the Nb sheet after then will processing is with carborundum paper polishing light, the Nb sheet after will polishing then cleans up, and dries for use;
Step 2, with USP Kosher, methyl alcohol, methane amide and water according to 20: 35: 42: 3 volume ratio uniform mixing makes mixed solvent, HF is added in the mixed solvent to stir then, obtains the electrolytic solution that fluorinion concentration is 0.4mol/L;
Step 3, with in the step 1 oven dry after the Nb sheet place electrolytic solution described in the step 2 as anode, as negative electrode, utilize direct supply antianode Nb sheet to carry out anodic oxidation with platinum electrode, oxidation voltage is 20V, oxidizing temperature is 40 ℃, oxidization time is 10h;
Step 4, the Nb sheet behind electrolytic oxidation in the step 3 is taken out and uses washed with de-ionized water, after the drying, obtain attached to the porous-film on the Nb matrix;
Step 5, with adopting mechanical means to peel off attached to the porous-film on the Nb matrix described in the step 4; The Nb matrix is separated with porous-film; Obtain unsupported porous-film, place retort furnace to carry out anneal unsupported porous-film then, obtain specific surface area and be not less than 15m
2/ g, thickness are 100 μ m, and the aperture is not less than 5nm, pitch of holes be not less than 3nm attached to the Nb on the Nb matrix
2O
5Nano-porous films; The system of said anneal is: 800 ℃ of annealing temperatures, soaking time 5h.
Embodiment 14
Present embodiment is identical with embodiment 13; Wherein difference is: used anhydrous organic reagent be in terepthaloyl moietie, USP Kosher, methyl alcohol, methane amide and the methyl-sulphoxide a kind of, two kinds, four kinds or five kinds; Perhaps be three kinds in terepthaloyl moietie, methyl alcohol, methane amide and the methyl-sulphoxide; Perhaps being two kinds and the mixture of USP Kosher in terepthaloyl moietie, methyl alcohol and the methyl-sulphoxide, perhaps is terepthaloyl moietie, USP Kosher and methane amide, perhaps is methyl-sulphoxide, USP Kosher and methane amide.
The above; It only is preferred embodiment of the present invention; Be not that the present invention is done any restriction, every according to inventing technical spirit to any simple modification, change and equivalent structure variation that above embodiment did, all still belong in the protection domain of technical scheme of the present invention.
Claims (7)
1. Nb
2O
5Nano-porous films is characterized in that, said Nb
2O
5Nano-porous films is that specific surface area is not less than 15m
2The unsupported Nb of/g
2O
5Nano-porous films is perhaps for to be not less than 15m attached to the specific surface area on the Nb matrix
2The Nb of/g
2O
5Nano-porous films.
2. a kind of Nb according to claim 1
2O
5Nano-porous films is characterized in that, and is said attached to the Nb on the Nb matrix
2O
5The thickness of nano-porous films is 0.05 μ m~150 μ m, said unsupported Nb
2O
5The thickness of nano-porous films is 0.5 μ m~150 μ m.
3. a kind of Nb according to claim 1
2O
5Nano-porous films is characterized in that, said Nb
2O
5The aperture of nano-porous films is not less than 5nm, and pitch of holes is not less than 3nm.
4. one kind prepares like claim 1,2 or 3 said Nb
2O
5The method of nano-porous films is characterized in that, this method may further comprise the steps:
Step 1, with thickness be the Nb sheet of 50 μ m~300 μ m with carborundum paper polishing light, the Nb sheet after will polishing then cleans up, and dries for use;
Step 2, with anhydrous organic reagent and ydrogen peroxide 50 or water according to 95~99: 1~5 volume ratio uniform mixing makes mixed solvent, fluorochemical is added in the mixed solvent to stir then, obtains the electrolytic solution that fluorinion concentration is 0.2mol/L~2mol/L;
Step 3, with in the step 1 oven dry after the Nb sheet place electrolytic solution described in the step 2 as anode; As negative electrode, utilize direct supply antianode Nb sheet to carry out anodic oxidation with platinum electrode, oxidation voltage is 5V~30V; Oxidizing temperature is 10 ℃~40 ℃, and oxidization time is 0.5h~28h;
Step 4, the Nb sheet behind electrolytic oxidation in the step 3 is taken out and uses washed with de-ionized water, after the drying, obtain attached to the porous-film on the Nb matrix;
Step 5, with placing retort furnace to carry out anneal attached to the porous-film on the Nb matrix described in the step 4, obtain attached to the Nb on the Nb matrix
2O
5Nano-porous films; Perhaps, the Nb matrix is separated with porous-film, obtain unsupported porous-film, place retort furnace to carry out anneal unsupported porous-film then, obtain unsupported Nb adopting mechanical means to peel off attached to the porous-film on the Nb matrix described in the step 4
2O
5Nano-porous films.
5. method according to claim 4 is characterized in that, anhydrous organic reagent described in the step 2 is one or more in terepthaloyl moietie, USP Kosher, methyl alcohol, methane amide and the methyl-sulphoxide.
6. method according to claim 4 is characterized in that, fluorochemical described in the step 2 is HF or NH
4F.
7. method according to claim 4 is characterized in that, the system of anneal described in the step 5 is: 300 ℃~1400 ℃ of annealing temperatures, soaking time 0.5h~6h.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011103965900A CN102443833A (en) | 2011-12-04 | 2011-12-04 | Nb2O5 nano-grade porous membrane and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011103965900A CN102443833A (en) | 2011-12-04 | 2011-12-04 | Nb2O5 nano-grade porous membrane and preparation method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102443833A true CN102443833A (en) | 2012-05-09 |
Family
ID=46006756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011103965900A Pending CN102443833A (en) | 2011-12-04 | 2011-12-04 | Nb2O5 nano-grade porous membrane and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102443833A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103855386A (en) * | 2014-03-21 | 2014-06-11 | 西北有色金属研究院 | Fe-doped Nb2Ox nano porous material with oxygen deficiency structure and application |
CN109652838A (en) * | 2018-12-27 | 2019-04-19 | 浙江工业大学 | A kind of method of titanium-niobium alloy surface anodization coloring |
CN111217392A (en) * | 2018-11-27 | 2020-06-02 | 中国科学院大连化学物理研究所 | Niobium oxide nano mesh material and preparation method thereof |
CN112831818A (en) * | 2021-02-05 | 2021-05-25 | 成都印钞有限公司 | Tantalum, niobium and precious metal composite multicolor coin and stamp manufacturing method and multicolor coin and stamp |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1341552A (en) * | 2001-08-14 | 2002-03-27 | 复旦大学 | Preparation method of niobium oxide nano pore molecular sieve film |
US20060234505A1 (en) * | 2003-12-18 | 2006-10-19 | Nippon Oil Corporation | Method for manufacturing nano-array electrode and photoelectric conversion device using same |
CN101494118A (en) * | 2008-01-22 | 2009-07-29 | 阿维科斯公司 | An electrolyte for forming a dielectric layer of an electrolytic capacitor |
JP2009177173A (en) * | 2008-01-22 | 2009-08-06 | Avx Corp | Electrolytic capacitor anode treated with organic metal compound |
-
2011
- 2011-12-04 CN CN2011103965900A patent/CN102443833A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1341552A (en) * | 2001-08-14 | 2002-03-27 | 复旦大学 | Preparation method of niobium oxide nano pore molecular sieve film |
US20060234505A1 (en) * | 2003-12-18 | 2006-10-19 | Nippon Oil Corporation | Method for manufacturing nano-array electrode and photoelectric conversion device using same |
CN101494118A (en) * | 2008-01-22 | 2009-07-29 | 阿维科斯公司 | An electrolyte for forming a dielectric layer of an electrolytic capacitor |
JP2009177173A (en) * | 2008-01-22 | 2009-08-06 | Avx Corp | Electrolytic capacitor anode treated with organic metal compound |
Non-Patent Citations (4)
Title |
---|
I. SIEBER等: "Formation of self-organized niobium porous oxide on niobium", 《ELECTROCHEMISTRY COMMUNICATIONS》 * |
P.SCHMUKI等: "《Pits and PoresⅢ: Formation,Properties,and Significance for Advanced Materials 》", 31 December 2006 * |
ROBERT L. KARLINSEY: "Self-assembled Nb2O5 microcones with tailored crystallinity", 《J MATER SCI》 * |
SACHIKO ONO等: "Growth of Porous Anodic Niobia and Tantala Films Composed of Crystalline Nanoparticles", 《216TH ECS MEETING》 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103855386A (en) * | 2014-03-21 | 2014-06-11 | 西北有色金属研究院 | Fe-doped Nb2Ox nano porous material with oxygen deficiency structure and application |
CN103855386B (en) * | 2014-03-21 | 2015-12-30 | 西北有色金属研究院 | There is the Fe doping Nb of oxygen defect structure 2o xnano-porous materials and application |
CN111217392A (en) * | 2018-11-27 | 2020-06-02 | 中国科学院大连化学物理研究所 | Niobium oxide nano mesh material and preparation method thereof |
CN111217392B (en) * | 2018-11-27 | 2021-09-14 | 中国科学院大连化学物理研究所 | Niobium oxide nano mesh material and preparation method thereof |
CN109652838A (en) * | 2018-12-27 | 2019-04-19 | 浙江工业大学 | A kind of method of titanium-niobium alloy surface anodization coloring |
CN109652838B (en) * | 2018-12-27 | 2021-05-18 | 浙江工业大学 | Titanium-niobium alloy surface anodic oxidation coloring method |
CN112831818A (en) * | 2021-02-05 | 2021-05-25 | 成都印钞有限公司 | Tantalum, niobium and precious metal composite multicolor coin and stamp manufacturing method and multicolor coin and stamp |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Lin et al. | Facile fabrication of free-standing TiO2 nanotube membranes with both ends open via self-detaching anodization | |
CN104131352B (en) | The preparation method of large scale perovskite structure methylamine bustamentite crystal | |
CN101752093B (en) | Preparation method for photonic crystal structure film electrode of dye solar cell | |
CN101752094B (en) | Electrode in a photonic crystal structure mixed with nano metal and making method thereof | |
CN102443833A (en) | Nb2O5 nano-grade porous membrane and preparation method thereof | |
CN105780087B (en) | The preparation method of Electric oxidative synthesis 1-dimention nano oxide structure | |
CN102603360B (en) | Method for preparing bismuth ferric thin film material | |
CN102153133A (en) | Method for preparing controllable ordered porous tin dioxide nano structures | |
CN103855386B (en) | There is the Fe doping Nb of oxygen defect structure 2o xnano-porous materials and application | |
CN106803601B (en) | preparation method of solid electrolyte lithium lanthanum titanium oxide film | |
CN110246917A (en) | A kind of inorganic perovskite solar battery and preparation method | |
CN102442661A (en) | Liquid-phase purification method of carbon nanotube | |
CN104962969A (en) | Preparation method for three-dimensional electrochromic nickel oxide thin film | |
CN111589457A (en) | Photocatalytic material for in-situ growth of three-dimensional copper sulfide on copper mesh, preparation method and application | |
CN103258718A (en) | Method for preparing crater-type porous silicon structure based on LSP effect | |
CN107653447B (en) | A kind of mineral carbon load stannic oxide electrode and preparation method | |
CN103695983B (en) | The preparation method of the controlled aluminium surface periodic nanometer hole texture of a kind of size | |
CN103866314B (en) | The preparation method and application of visible light-responded black titanium dioxide nano thin-film | |
CN104844016A (en) | Production method for depositing iron oxide film on ITO conductive glass | |
Wu et al. | From waste carbonated beverages to high performance electrochromic devices: a green and low-cost synthetic method for self-doped metal oxides | |
CN112563564A (en) | Soft chemical synthesis method for preparing sodium ion solid electrolyte | |
CN115433366B (en) | Hydrogen bond organic framework nano-sheet and preparation method and application thereof | |
CN105271214A (en) | Oxidation-reduction preparation method for graphene | |
CN103556201B (en) | A kind of Flaky vanadium dioxide film material and preparation method thereof | |
CN101070603B (en) | Method for making electrochemical oriented growth Al2O3 super-thin film substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120509 |