CN102436095B - Manufacturing method of transmission-type silicon-based liquid crystal display - Google Patents
Manufacturing method of transmission-type silicon-based liquid crystal display Download PDFInfo
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- CN102436095B CN102436095B CN201210001370.8A CN201210001370A CN102436095B CN 102436095 B CN102436095 B CN 102436095B CN 201210001370 A CN201210001370 A CN 201210001370A CN 102436095 B CN102436095 B CN 102436095B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
- G02F1/136281—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon having a transmissive semiconductor substrate
Abstract
The invention discloses a manufacturing method of a transmission-type silicon-based liquid crystal display. The method is characterized by comprising the following steps of: transparentizing a silicon-based substrate; manufacturing a colored color filter; manufacturing a liquid crystal sealing box; manufacturing a high-brightness backlight source; and performing micro-package on multiple layers of split components of a display device. The display manufactured with the method has the advantages of simple light path, compact structure, high reliability and the like, and is widely applied to the market fields of head-wear-type displays, video eyeglasses, micro-projection, photo printing machines and the like.
Description
Technical field
The present invention relates to a kind of liquid crystal display, especially a kind of transmission-type silicon-based liquid crystal display, specifically a kind of method for making of transmission-type silicon-based liquid crystal display.
Background technology
At present, Liquiid crystal on silicon (lcos) display, namely LCOS(Liquid Crystal on Silicon), be all to belong to reflective liquid crystal on silicon, have the advantages that integrated level is high, resolution is high, the aperture opening ratio of device own is high, widespread use and micro-demonstration field.
But this reflective type silicon-based liquid crystal is in optical system, need to increase an extra polarization splitting prism PBS device, for the illumination of backlight is mapped to LCOS device surface, the light reflecting is also to project screen or observing eyes through PBS device, cause the light utilization efficiency of whole light path to reduce, light channel structure is complicated, and the volume of whole module is large, and the fields such as the helmet or the demonstration of nearly eye that do not meet require little, the lightweight specific (special) requirements of micro-display device volume.
And transmission-type silicon-based liquid crystal display, backlight is directly positioned over after liquid crystal device, do not need extra PBS optical device, the advantage such as have that light path is simple, compact conformation, volume are little, lightweight, also has the advantageous feature such as liquid crystal on silicon integrated level is high, resolution is high simultaneously.
Summary of the invention
The object of the invention is for existing reflective type silicon-based liquid crystal display volume greatly, complex structure, is difficult to adapt to the problem of miniaturization demand, invents that a kind of light path is simple, compact conformation, volume are little, the method for making of lightweight transmission-type silicon-based liquid crystal display.
Technical scheme of the present invention is:
A method for making for transmission-type silicon-based liquid crystal display, is characterized in that it comprises: the transparence processing of silicon based substrate, the making of color filter, the liquid crystal envelope making of box and the making in high brightness backlights source; It is to adopt silicon-on-insulator that the transparence of described silicon based substrate is processed, and this silicon-on-insulator is comprised of device layer, insulation course and substrate layer, and the thickness of insulation course is at 0.5 ~ 1 μ m, and the thickness of device layer is at 0.3 ~ 1.5 μ m; Insulation course in the middle of utilizing is peeled off and is shifted the device being produced on device layer, opaque substrate layer is become transparent; The making of described color filter is to adopt photoresist dopant dye to carry out the mode of exposure curing, first on transparency glass plate, makes black matrix, then applies the photoresist of doping orchil, exposes and solidify to form red color filter; Make successively again green color filter and blue color filter, then on the color filter of making, make protective seam the transparent ITO conductive electrode of evaporation, form figure, complete the making of color filter; It is to carry out liquid crystal envelope box making monochrome transmissive formula silicon-base liquid crystal display device with the transparent silicon based substrate of making and the public ITO electrode base board with black matrix that described liquid crystal seals box making, in described transparent silicon based substrate and coated with polyimide alignment layers above public ITO electrode base board, and friction orientation, liquid crystal molecule is arranged by the direction of setting; Then in sealed plastic box the inside, the thick wadding of liquid crystal cell is controlled in doping equably, by the mode of serigraphy, be printed onto above filter substrate, by transparent silicon based substrate and public ITO electrode base board contraposition laminating, then hot-press solidifying forms liquid crystal sylphon, sylphon is carried out to priming by vacuum liquid crystal, and sealing cleaning, polaroid pasted, with FPC hot pressing, the electrode of contraposition is drawn, realize electrical connection; Changing the public ITO electrode base board with black matrix into color filter substrate carries out when liquid crystal envelope box is made forming colored transmission-type silicon-based liquid crystal display; With the transparent silicon based substrate of integrated colour and the public ITO electrode base board with black matrix, carry out when liquid crystal envelope box is made also can forming colored transmission-type silicon-based liquid crystal display equally, the transparent silicon based substrate of described integrated colour refers to silicon based substrate and the integrated structure of color filter with the bonding formation of color filter of making by the silicon based substrate of processing through transparence; The making in described high brightness backlights source refers to the LED fluorescent tube of selecting efficient high power, and install reverberation bowl additional on LED fluorescent tube, and the light emitting anger of LED lamp is converged to 60 ° ~ 70 ° from original 120 ° ~ 130 °, light extraction efficiency is improved, brightness increases, and reduces power consumption.
The method for making of transmission-type silicon-based liquid crystal display of the present invention, it is characterized in that it also comprises micro-assembling of multilayer discrete parts, micro-group of described multilayer discrete parts refers to transparent silicon based substrate, color filter, liquid crystal display medium, polaroid and high brightness backlights source is assembled into transmission-type silicon-based liquid crystal display.
It is first on device layer, to make si-substrate integrated circuit part and the liquid crystal addressing array part needing that the transparence of described silicon based substrate is processed, then by the bonding transparency carrier of optical cement, the device of the integrated circuit part on the device layer that makes to need is transferred to above another one transparency carrier, then original substrate layer is carried out to attenuate until transparent; Attenuate is to adopt the technique of mechanical reduction by substrate silicon attenuate, then utilizes the middle silicon dioxide insulating layer of silicon-on-insulator as the restraining barrier of chemical etching residue substrate layer, substrate layer is etched away, until silicon dioxide insulating layer; Then on silicon dioxide insulating layer, adopt the mode of laser boring, the part that need to be electrically connected with the external world is drawn, and the transparent ITO conductive layer of evaporation, and photoetching forms figure, completes electrical connection, realizes the making of transparent silicon based substrate.
In order to prevent that the light of ambient light or backlight from causing damage at the light of interface reflection to the device on device layer; public ITO electrode base board is also made into black matrix; then on black matrix, do passivation layer, then do public ITO conductive electrode, so that device is shielded.
Beneficial effect of the present invention:
The present invention has that light path is simple, compact conformation, high reliability, can be widely used in the market segments such as head mounted display, video eyeglasses, micro-projection, photo printing machine.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of SOI silicon-on-insulator of the present invention.
Fig. 2 is the IC device of making on SOI silicon-on-insulator and electrode is guided to the structural representation above insulation course.
Fig. 3 is transparent silicon based substrate structural representation of the present invention.
Fig. 4 is the area distributions schematic diagram of transparent silicon based substrate of the present invention.
Fig. 5 is the structural representation of the black matrix made on glass of the present invention.
Fig. 6 is by the schematic diagram of photoetching making red color filter.
Fig. 7 is the diagrammatic cross-section of the color filter made of the present invention.
Fig. 8 is the public ITO electrode base board with black matrix.
Fig. 9 is the high brightness LED backlight source cross-sectional view that adds reverberation bowl.
Figure 10 is the cross-sectional view of the monochrome transmissive formula Liquiid crystal on silicon (lcos) display of making.
Figure 11 is the cross-sectional view of a kind of colored transmission-type silicon-based liquid crystal display of making.
Figure 12 is that silicon based substrate is directly transferred to above color filter, forms colored transparent silicon based substrate.
Figure 13 is the cross-sectional view of a kind of integrated colored Liquiid crystal on silicon (lcos) display of making.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further illustrated.
As shown in Fig. 1-13.
A method for making for transmission-type silicon-based liquid crystal display, it comprises: the transparence of silicon based substrate is processed, the making of color filter, the liquid crystal envelope making of box, the making in high brightness backlights source, with the public ITO electrode base board of black matrix, make micro-assembling of (Fig. 8) and multilayer discrete parts, it is to adopt silicon-on-insulator that the transparence of described silicon based substrate is processed (as Fig. 1-4), this silicon-on-insulator is by device layer 1, insulation course 2 and substrate layer 3 form, as Fig. 1, the thickness of insulation course is at 0.5 ~ 1 μ m, the thickness of device layer is at 0.3 ~ 1.5 μ m, during making, first on device layer, make si-substrate integrated circuit part and the liquid crystal addressing array part needing, as Fig. 2, then by the bonding transparency carrier of optical cement, the device of the integrated circuit part on the device layer that makes to need is transferred to above another one transparency carrier, as shown in Figure 3, then original substrate layer is carried out to attenuate until transparent, attenuate is to adopt the technique of mechanical reduction by substrate silicon attenuate, then utilize the middle silicon dioxide insulating layer of silicon-on-insulator as the restraining barrier of chemical etching residue substrate layer, substrate layer is etched away, until silicon dioxide insulating layer, then on silicon dioxide insulating layer, adopt the mode of laser boring, the part that need to be electrically connected with the external world is drawn, and the transparent conductive metal layer of evaporation, photoetching forms figure, complete electrical connection, realize the making of transparent silicon based substrate, as shown in Figure 4, insulation course in the middle of utilizing is peeled off and is shifted the device being produced on device layer, opaque substrate layer is become transparent.The making of described color filter (as Fig. 5-7) is to adopt photoresist dopant dye to carry out the mode of exposure curing, first on transparency glass plate, make black matrix, then apply the photoresist of doping orchil, expose and solidify to form red color filter; Make successively again green color filter and blue color filter, then on the color filter of making, make protective seam the transparent ITO conductive layer of evaporation, form figure, complete the making of color filter.It is to carry out liquid crystal envelope box making monochrome transmissive formula silicon-base liquid crystal display device with the transparent silicon based substrate of making and the public ITO electrode base board with black matrix that described liquid crystal seals box making, in described transparent silicon based substrate and coated with polyimide alignment layers above public ITO electrode base board, and friction orientation, liquid crystal molecule is arranged by the direction of setting; Then in sealed plastic box the inside, the thick wadding of liquid crystal cell is controlled in doping equably, by the mode of serigraphy, be printed onto above filter substrate, by transparent silicon based substrate and public ITO electrode base board contraposition laminating, then hot-press solidifying forms liquid crystal sylphon, sylphon is carried out to priming by vacuum liquid crystal, and sealing cleaning, polaroid pasted, with FPC hot pressing, the electrode of contraposition is drawn, realize electrical connection; Changing the common electrode substrate with black matrix into color filter substrate carries out when liquid crystal envelope box is made forming colored transmission-type silicon-based liquid crystal display; With the transparent silicon based substrate of integrated colour and the public ITO electrode base board with black matrix, carry out when liquid crystal envelope box is made also can forming colored transmission-type silicon-based liquid crystal display equally, the transparent silicon based substrate of described integrated colour refers to silicon based substrate and the integrated structure of color filter with the bonding formation of color filter of making by the silicon based substrate of processing through transparence; The making in described high brightness backlights source (Fig. 9) refers to the LED fluorescent tube of selecting efficient high power, and install reverberation bowl additional on LED fluorescent tube, and the light emitting anger of LED lamp is converged to 60 ° ~ 70 ° from original 120 ° ~ 130 °, light extraction efficiency is improved, brightness increases, and reduces power consumption.
In order to prevent that the light of ambient light or backlight from causing damage at the light of interface reflection to the device on device layer; public ITO electrode base board is also made into black matrix, then on black matrix, does passivation layer, then do public conductive electrode; so that device is shielded, as shown in Figure 8.
Details are as follows:
Fig. 1 is the cross-sectional view of the SOI silicon-on-insulator that adopts of the present invention, and in figure, 1 is the device silicon layer of making integrated circuit part and addressing array on silicon, the 2nd, and silicon dioxide insulating layer, the 3rd, substrate silicon layer.The thickness of silicon dioxide insulating layer is generally 0.4 ~ 1 μ m, is mainly the effect on restraining barrier of playing when chemical etching substrate silicon, and device silicon layer thickness is 0.3 ~ 1.5 μ m, is mainly to make the integrated circuit (IC)-components such as thin film transistor (TFT) in the above.
Fig. 2 makes liquid crystal matrix addressing array and peripheral drive control circuit part on the device silicon layer of silicon-on-insulator, is mainly cmos switch device, comprises source class 4, drain electrode 5, grid 6, and three electrodes are drawn to 7.In order to realize transparent silicon based substrate, device silicon layer is very little owing to making the shared volume of cmos switch device, the area taking is also little, but although remaining silicon layer very thin be also opaque, the device silicon layer of not using need to be carried out to transparence processing, by high-temperature heating, convert the device silicon layer of not using to silicon dioxide layer 8, and silicon dioxide layer is transparent, therefore can guarantees that the part except doing cmos device is also transparent.In order to do transparent silicon based substrate, device need to should be connected to above the silicon dioxide insulating layer of silicon-on-insulator in advance with the electrode of the part of external world's electrical connection and the drain electrode of thin film transistor (TFT), to facilitate subsequent technique that electrode is drawn.Such as the drain electrode 5 of cmos switch device is connected to above silicon dioxide insulating layer on 9 by metal connecting line 8.And taking into full account the aperture opening ratio of device, device volume, cabling will lack as far as possible, guarantee that device has certain aperture opening ratio.On device, do passivation layer 10 and make device injury-free in subsequent handling, light shield layer 11 makes device in application process, is not subject to the interference of ambient light, and causes the decline of device performance and deteriorated.
Fig. 3 is that with optical cement 12 and transparency carrier 13, to carry out inversion type single bonding, optical cement is selected the commercially available two component epoxy glue that transmitance is high, cementability is strong, reliability is high, soda acid technique, high-temperature technology that can resistance to follow-up semiconductor technology, realize reliably bonding.Using bonding transparency glass plate as supporting substrate, the substrate silicon 3 of silicon-on-insulator is removed until silicon dioxide insulating layer 2, removal method is first to adopt the method for mechanical lapping that substrate silicon 3 is first ground to certain thickness from the thickness of hundreds of micron, generally 30 μ m left and right, by the method for chemical etching, remaining substrate silicon is etched away again, can utilize silicon dioxide insulating layer to complete as the restraining barrier of chemical etching substrate silicon.Chemical etching can adopt the method for wet etching, and such as the KOH saturated solution with 35%, etching temperature is controlled at 90 ℃ of left and right, utilizes silicon dioxide as etched restraining barrier, reaction self-stopping technology, and etch rate is greatly about 3 μ m/min.Or by the method for dry plasma etch, such as ICP etching machine carrys out etching, be also to utilize silicon dioxide as the etched restraining barrier of silicon, complete the removal of substrate silicon.And the silicon dioxide thickness retaining is thinner, itself be transparent.Then on silicon dioxide insulating layer, punch, the electrode that needs are drawn extracts, and the transparent conductive electrode of evaporation, and photoetching forms figure.In Fig. 3,14 is technique by laser boring, on silicon dioxide insulating layer, punch, and metallization.On silicon dioxide insulating layer, the metal conducting layer that evaporation is transparent, the figure 15 that becomes to need by chemical wet etching, the drawing with the transparence of electrode of electrode that completes transparent silicon substrate made.
Fig. 4 is the schematic diagram of the transparent silicon based substrate of making.The film crystal pipe unit major part 19 of silicon based substrate is all transparent, and it is opaque only having the part of making film transistor device, but only occupies the segment space of limit, has guaranteed the aperture opening ratio of device and certain transmitance.16, the 17, the 18th, peripheral drive control circuit part, the 20th, device and the extraneous partial electrode being connected.With this transparent silicon based substrate, make transmission-type microdisplay on silicon part, there is compact conformation, light path is simple, reliability is high, aperture opening ratio advantages of higher.
Fig. 5 makes black matrix 22 on glass substrate 21, is also to make by photoetching process.
Fig. 6 makes red color filter on the glass substrate 21 of the black matrix 22 of being manufactured with of Fig. 5, on make the substrate of black matrix, spin coating has the photoresist 23 of orchil, with mask plate 24, expose, the part being irradiated to after development stays, and hot setting moulding, forms red color filter 25.
Fig. 7 adopts the mode of photoetching to make green color filter 26 and blue color filter 27 successively, and makes passivation layer in the above, its protective effect, and evaporation transparency conducting layer, and photoetching forms the figure needing, and produces color filter.
Fig. 8 is the public ITO electrode base board schematic diagram with black matrix.On make the transparency carrier of black matrix; first do one deck passivation layer; its protective effect; and then evaporation layer of transparent conductive layer 29; generally use ITO electrode, and be photo-etched into figure, form the public ITO electrode base board with black matrix; the effect of black matrix is its protective effect, protects above corresponding silicon based substrate IC device not by ambient light or return the light of penetrating to cause damage and cause the deteriorated of device.
Fig. 9 is the high brightness LED backlight source cross-sectional view that adds reverberation bowl.On aluminum base PCB plate 33, arrange special LED fluorescent tube 30, LED fluorescent tube is high-level efficiency, powerful fluorescent tube, add reverberation bowl 31 above, the shape of reverberation bowl is done camber 32, this special structure can make the light that LED fluorescent tube sends gather 60 ° ~ 70 ° from the original angle of divergence of 120 ° ~ 130 °, the efficiency of the exiting surface of backlight is improved, and brightness improves 40% ~ 50%, obtains the backlight of high brightness.
Figure 10 is with the monochrome transmissive formula Liquiid crystal on silicon (lcos) display of making and the display module schematic diagram of backlight.Transparent silicon based substrate and with the public ITO electrode base board of black matrix, first applies respectively alignment agent 34, and carries out friction orientation, and the specific direction of liquid crystal molecule is arranged.Then in sealed plastic box 35 the insides, adulterate uniformly and control the thick wadding of liquid crystal cell, by the mode of serigraphy, be printed onto above filter substrate, by two substrate contraposition laminatings, then hot-press solidifying gets up, and forms liquid crystal sylphon.Sylphon is carried out to priming by vacuum liquid crystal 36, and sealing is cleaned.Paste polaroid, with FPC hot pressing, the electrode of contraposition is drawn, realize the making that has been electrically connected transmission-type silicon-based liquid crystal display.High brightness backlights source is added in below liquid crystal device, backlight is provided, complete the micro-assembling of having of micro-display device all parts.
Figure 11 is the cross-sectional view of a kind of colored transmission-type silicon-based liquid crystal display of making.With transparent silicon based substrate and color filter substrate, carry out liquid crystal envelope box.Envelope box technique is similar with the envelope box technique of monochromatic liquid crystal display.
Figure 12 is that silicon based substrate is directly transferred to above color filter, forms colored transparent silicon based substrate, and the silicon based substrate of Fig. 2 is bonded together with the color filter of optical cement 12 and Fig. 7.Wherein top layer is not transparent conductive layer, but passivation layer 37, the effect of protection color filter.Form silicon based substrate and the integrated structure of color filter.
Figure 13 is the cross-sectional view of a kind of integrated colored Liquiid crystal on silicon (lcos) display of making.With integrated colourful transparent silicon based substrate with the public ITO electrode base board of black matrix, carry out liquid crystal envelope box, complete the making of colour liquid crystal display device.Envelope box technique is similar with the envelope box technique of monochromatic liquid crystal display.
According to method for making of the present invention, can produce the transmission-type silicon-based liquid crystal display of monochromatic high brightness, Diagonal Dimension is 0.5 inch, and resolution is 24 * 48, and the cross-section structure of device is as shown in figure 10.
The part that the present invention does not relate to all prior art that maybe can adopt same as the prior art is realized.
Claims (3)
1. a method for making for transmission-type silicon-based liquid crystal display, is characterized in that it comprises: the transparence processing of silicon based substrate, the making of color filter, the liquid crystal envelope making of box and the making in high brightness backlights source, it is to adopt silicon-on-insulator that the transparence of described silicon based substrate is processed, and this silicon-on-insulator is comprised of device layer, insulation course and substrate layer, and the thickness of insulation course is at 0.5 ~ 1 μ m, and the thickness of device layer is at 0.3 ~ 1.5 μ m, insulation course in the middle of utilizing is peeled off and is shifted the device being produced on device layer, opaque substrate is become transparent, the transparence treatment step of described silicon based substrate comprises: si-substrate integrated circuit part and the liquid crystal addressing array part of first on device layer, making needs, then by the bonding transparency carrier of optical cement, the device of the integrated circuit part on the device layer that makes to need is transferred to above another one transparency carrier, then original substrate layer is carried out to attenuate until transparent, described attenuate is to adopt the technique of mechanical reduction by substrate silicon attenuate, then utilize the middle silicon dioxide insulating layer of silicon-on-insulator as the restraining barrier of chemical etching residue substrate layer, substrate layer is etched away, until silicon dioxide insulating layer, then on silicon dioxide insulating layer, adopt the mode of laser boring, the part that need to be electrically connected with the external world is drawn, and the transparent conductive metal layer of evaporation, and photoetching forms figure, completes electrical connection, realizes the making of transparent silicon based substrate, the making of described color filter is to adopt photoresist dopant dye to carry out the mode of exposure curing, first on transparency glass plate, makes black matrix, then applies the photoresist of doping orchil, exposes and solidify to form red color filter, make successively again green color filter and blue color filter, then on the color filter of making, make protective seam the transparent conducting metal of evaporation, form figure, complete the making of color filter, it is to carry out liquid crystal envelope box making monochrome transmissive formula silicon-base liquid crystal display device with the transparent silicon based substrate of making and the public ITO electrode base board with black matrix that described liquid crystal seals box making, in described transparent silicon based substrate and coated with polyimide alignment layers above public ITO electrode base board, and friction orientation, liquid crystal molecule is arranged by the direction of setting, then in sealed plastic box the inside, the thick wadding of liquid crystal cell is controlled in doping equably, by the mode of serigraphy, be printed onto above filter substrate, by transparent silicon based substrate and public ITO electrode base board contraposition laminating, then hot-press solidifying forms liquid crystal sylphon, sylphon is carried out to priming by vacuum liquid crystal, and sealing cleaning, polaroid pasted, with FPC hot pressing, the electrode of contraposition is drawn, realize electrical connection, changing the public ITO electrode base board with black matrix into color filter substrate carries out when liquid crystal envelope box is made forming colored transmission-type silicon-based liquid crystal display, with the transparent silicon based substrate of integrated colour and the public ito substrate with black matrix, carry out when liquid crystal envelope box is made also can forming colored transmission-type silicon-based liquid crystal display equally, the transparent silicon based substrate of described integrated colour refers to silicon based substrate and the integrated structure of color filter with the bonding formation of color filter of making by the silicon based substrate of processing through transparence, the making in described high brightness backlights source refers to the LED fluorescent tube of selecting efficient high power, and install reverberation bowl additional on LED fluorescent tube, and the light emitting anger of LED lamp is converged to 60 ° ~ 70 ° from original 120 ° ~ 130 °, light extraction efficiency is improved, brightness increases, and reduces power consumption.
2. the method for making of transmission-type silicon-based liquid crystal display according to claim 1, it is characterized in that it also comprises micro-assembling of multilayer discrete parts, micro-group of described multilayer discrete parts refers to transparent silicon based substrate, color filter, liquid crystal display medium, polaroid and high brightness backlights source is assembled into transmission-type silicon-based liquid crystal display.
3. the method for making of transmission-type silicon-based liquid crystal display according to claim 1; it is characterized in that in order to prevent that the light of ambient light or backlight from causing damage at the light of interface reflection to the device on device layer; public electrically-conductive backing plate is also made into black matrix; then on black matrix, do passivation layer; do again public ito transparent electrode, so that device is shielded.
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| FR3085763A1 (en) * | 2018-09-07 | 2020-03-13 | Commissariat A L Energie Atomique Et Aux Energies Alternatives | TRANSMISSION SCREEN WITH LIQUID CRYSTALS ON SILICON |
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| CN103000581B (en) * | 2012-12-14 | 2015-07-08 | 京东方科技集团股份有限公司 | Production method of thin film transistor (TFT) array substrate |
| CN103744212B (en) * | 2013-12-12 | 2016-05-25 | 中国电子科技集团公司第五十五研究所 | The preparation method of high-contrast transmission-type liquid crystal on silicon screen |
| CN104849893B (en) * | 2014-02-19 | 2018-08-07 | 美商晶典有限公司 | The wafer scale liquid crystal assembling of liquid crystal on silicon and display module and its manufacturing method |
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| US6797983B2 (en) * | 2002-01-30 | 2004-09-28 | United Microelectronics Corp. | Method of fabrication LCOS structure |
| CN100449365C (en) * | 2006-09-30 | 2009-01-07 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for reflection mirror of silicon-based LCD device |
| CN102023436B (en) * | 2009-09-16 | 2014-07-02 | 联华电子股份有限公司 | Liquid crystal on silicon (LCoS) panel and manufacturing method thereof |
| CN102053432A (en) * | 2009-10-27 | 2011-05-11 | 立景光电股份有限公司 | Displayer and manufacturing method thereof |
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