CN102435547B - Sensitive photoresist tolerance degree detection method and wafer defect detection method - Google Patents
Sensitive photoresist tolerance degree detection method and wafer defect detection method Download PDFInfo
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- CN102435547B CN102435547B CN201110272691.7A CN201110272691A CN102435547B CN 102435547 B CN102435547 B CN 102435547B CN 201110272691 A CN201110272691 A CN 201110272691A CN 102435547 B CN102435547 B CN 102435547B
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Abstract
The invention discloses a sensitive photoresist tolerance degree detection method and a wafer defect detection method. The sensitive photoresist tolerance degree detection method comprises the following steps of putting a sensitive photoresist on a testing sheet, establishing a deep ultraviolet light source scanning program, selecting a testing scanning area by scanning, examining if a sensitive photoresist figure is changed, and recording the frequency of selected area scanning adopting the deep ultraviolet light source scanning program if the sensitive photoresist figure is changed. The wafer defect detection method comprises the following steps of finding out a maximum tolerance scanning frequency of the sensitive photoresist, and carrying out scanning frequency adjustment so that an actual scanning frequency is less than the maximum tolerance scanning frequency of the sensitive photoresist. In the invention, through determination of the maximum tolerance scanning frequency of the sensitive photoresist scanned by deep ultraviolet light source scanning, a tolerance degree of the sensitive photoresist under the radiation of a deep ultraviolet light source is determined, and through further control on a scanning frequency of the testing scanning area, an ultraviolet light absorption amount can be controlled. Through the sensitive photoresist tolerance degree detection method and the wafer defect detection method, sensitive photoresistive damage is prevented and a figure size can be retained well. The sensitive photoresist tolerance degree detection method and the wafer defect detection method are simple and can be realized easily.
Description
Technical field
The present invention relates to a kind of photoresistance tolerance degree detection method and the wafer method of inspection, relate in particular to a kind of responsive photoresistance tolerance degree detection method and wafer defect method of inspection of utilizing deep ultraviolet light source.
Background technology
Along with integrated circuit (IC)-components size is constantly dwindled, the complexity of technological process improves constantly, and needs to have more high resolving power and the defect detection equipment that can fully suppress process disturbance in on-line monitoring process.Current adopted deep ultraviolet light source defect detection equipment has outstanding noise reduction capability and high resolving power is used widely because of it.
But, the wavelength of deep ultraviolet light source defect detection equipment is in 260nm to 300nm left and right, the wavelength approximate (being about 248nm) of the deep UV lithography equipment using in its wavelength coverage and photoetching process, when using this checkout equipment to carry out defects detection to responsive photoresistance, scan the light activated photoresistance of deep ultraviolet for a long time, can cause overexposure to this photoresistance figure, figure is damaged.Therefore, in actual production, can avoid using deep ultraviolet light source, to guarantee the intact of graphics critical dimension.Will sacrifice like this superiority of deep ultraviolet light source when to responsive photoresistance scanning defect.
Therefore, those skilled in the art is devoted to develop a kind of method that can utilize deep ultraviolet light source to detect responsive photoresistance tolerance degree, and and then check wafer defect method.
Summary of the invention
For the deficiencies in the prior art, the object of this invention is to provide a kind of method that can utilize deep ultraviolet light source to detect responsive photoresistance tolerance degree, and and then check wafer defect method.
A kind of responsive photoresistance tolerance degree detection method of the present invention, comprises the following steps:
Step 1, is placed in responsive photoresistance on test film, and sets up deep ultraviolet light source scanning pass formula;
Step 2, selected test scan region;
Step 3, scans selection area;
Step 4, checks whether responsive photoresistance figure changes;
Step 5, as unchanged in responsive photoresistance figure, continue scanning, as change, record the scanning times of deep ultraviolet light source formula to selected areas;
Step 6, the maximum that step 5 gained scanning times is recorded as to described responsive photoresistance tolerates scanning times.
In a preferred embodiment of the present invention, the wavelength of described deep ultraviolet light source is 260nm ~ 300nm.
The present invention also provides a kind of method that above-mentioned responsive photoresistance tolerance degree detection method is carried out wafer defect check of applying, and comprises the following steps:
Step 1, determines the responsive photoresistance of required check in wafer;
Step 2, applies responsive photoresistance described in above-mentioned responsive photoresistance tolerance degree detection method detecting step 1, obtains the maximum tolerance scanning times of described responsive photoresistance;
Step 3, adjusts deep ultraviolet light source Defect Scanning equipment maximum scan number of times of responsive photoresistance region described in process wafer in scanning process, makes maximum scan number of times be less than the maximum tolerance scanning times of described responsive photoresistance.
In another preferred embodiment of the present invention, the wavelength of the deep ultraviolet light source of described deep ultraviolet light source Defect Scanning equipment is 260nm ~ 300nm.
Thereby the present invention has detected the tolerance degree of responsive photoresistance to this deep UV (ultraviolet light) by the maximum tolerance number of times of measuring responsive photoresistance and being scanned by deep ultraviolet light source.And further by controlling the scanning times in this region to control deep UV (ultraviolet light) light income, prevent that responsive photoresistance from damaging, and having guaranteed the intact of dimension of picture, method is simple, is easy to carry out.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of one embodiment of the present of invention;
Fig. 2 is the deep ultraviolet light source Defect Scanning equipment of one embodiment of the present of invention schematic diagram to wafer-scanning principle.
Embodiment
Below in conjunction with accompanying drawing, the present invention is done to concrete description.
As shown in fig. 1, a kind of responsive photoresistance tolerance degree detection method of the present invention, comprises the following steps:
Step 1, is placed in responsive photoresistance on test film, and sets up deep ultraviolet light source scanning pass formula;
Step 2, selected test scan region;
Step 3, scans selection area;
Step 4, checks whether responsive photoresistance figure changes;
Step 5, as unchanged in responsive photoresistance figure, continue scanning, as change, record the scanning times of deep ultraviolet light source formula to selected areas;
Step 6, the maximum that step 5 gained scanning times is recorded as to described responsive photoresistance tolerates scanning times.
The present invention is by responsive photoresistance is placed under the scanning of deep ultraviolet light source, thereby drawn the maximum tolerance scanning times of responsive photoresistance to deep ultraviolet light source.
Suppose that responsive photoresistance can be expressed as C(exposure photoresistance characteristic to the tolerance degree of deep UV (ultraviolet light), relevant to photoresistance thickness, viscosity, type etc.), t(irradiation time), I(intensity of illumination) function
P=f (C
pR, t, I) and P is photoresistance tolerance degree
From above-mentioned function, for specific deep ultraviolet optical detection system and specific photoresistance, the tolerance degree of responsive photoresistance is directly related with irradiation time.
As shown in Figure 2, in optical defect detection system, deep ultraviolet light source moves with certain relative velocity with being scanned wafer, and the arrow shown in Fig. 2 is the route of deep ultraviolet light source on wafer.Therefore,, in definite light source translational speed situation, illuminated time of responsive photoresistance and light source are through the number of times linear dependence of the same area.
Thereby the present invention has detected the tolerance degree of responsive photoresistance to this deep UV (ultraviolet light) by the maximum tolerance number of times of measuring responsive photoresistance and being scanned by deep ultraviolet light source.The inventive method is simple, is easy to carry out.
In preferred embodiment of the present invention, the wavelength of deep ultraviolet light source is 260nm ~ 300nm.
In addition, a kind of method that above-mentioned responsive photoresistance tolerance degree detection method is carried out wafer defect check of applying of the present invention, comprises the following steps:
Step 1, determines the responsive photoresistance of required check in wafer;
Step 2, applies responsive photoresistance described in above-mentioned responsive photoresistance tolerance degree detection method detecting step 1, obtains the maximum tolerance scanning times of described responsive photoresistance;
Step 3, adjusts deep ultraviolet light source Defect Scanning equipment maximum scan number of times of responsive photoresistance region described in process wafer in scanning process, makes maximum scan number of times be less than the maximum tolerance scanning times of described responsive photoresistance.
The wafer defect method of inspection of the present invention is by detecting the maximum tolerance scanning times of responsive photoresistance, thereby obtain the maximum tolerance number of times of responsive photoresistance region to deep UV (ultraviolet light) on wafer, and further by controlling the scanning times in this region to control deep UV (ultraviolet light) light income, deep ultraviolet light source can be applied in the defects detection of responsive photoresistance, and prevent that responsive photoresistance from damaging, guaranteed the intact of dimension of picture, when quantitative optical scanning, can make deep ultraviolet light source bring into play its superiority.
In preferred embodiment of the present invention, the wavelength of the deep ultraviolet light source of deep ultraviolet light source Defect Scanning equipment is 260nm ~ 300nm.
Above specific embodiments of the invention be have been described in detail, but it is just as example, the present invention is not restricted to specific embodiment described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and alternative also all among category of the present invention.Therefore, equalization conversion and the modification done without departing from the spirit and scope of the invention, all should contain within the scope of the invention.
Claims (4)
1. a responsive photoresistance tolerance degree detection method, is characterized in that, comprises the following steps:
Step 1, is placed in test film by responsive photoresistance, and sets up the deep ultraviolet light source scanning pass formula to responsive photoresistance;
Step 2, selected test scan region;
Step 3, scans selection area;
Step 4, checks whether responsive photoresistance figure changes;
Step 5, as unchanged in responsive photoresistance figure, continue scanning, as change, record the scanning times of deep ultraviolet light source formula to selected areas;
Step 6, the maximum that step 5 gained scanning times is recorded as to described responsive photoresistance tolerates scanning times;
Wherein, described deep ultraviolet light source and described responsive photoresistance are with certain relative velocity motion.
2. responsive photoresistance tolerance degree detection method as claimed in claim 1, is characterized in that, the wavelength of described deep ultraviolet light source is 260nm～300nm.
3. the method that application method as claimed in claim 1 or 2 is carried out wafer defect check, is characterized in that, comprises the following steps:
Step 1, determines the responsive photoresistance of required check in wafer;
Step 2, application rights requires responsive photoresistance described in the method detecting step 1 described in 1, obtains the maximum tolerance scanning times of described responsive photoresistance;
Step 3, adjusts deep ultraviolet light source Defect Scanning equipment maximum scan number of times of responsive photoresistance region described in process wafer in scanning process, makes maximum scan number of times be less than the maximum tolerance scanning times of described responsive photoresistance.
4. the method for wafer defect check as claimed in claim 3, is characterized in that, the wavelength of the deep ultraviolet light source of described deep ultraviolet light source Defect Scanning equipment is 260nm～300nm.
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| CN103646899B (en) * | 2013-11-29 | 2016-10-12 | 上海华力微电子有限公司 | Wafer defect detection method |
| CN103900978A (en) * | 2014-03-27 | 2014-07-02 | 深圳市华星光电技术有限公司 | Method for measuring concentration of light resistance in striping liquid |
| CN110581082B (en) * | 2019-09-06 | 2022-02-01 | 上海华力集成电路制造有限公司 | Method for monitoring wafer defects by using defect detection machine |
| CN114047672B (en) * | 2021-11-25 | 2023-09-12 | 华虹半导体(无锡)有限公司 | Method for reducing photoresist damage in measurement process |
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| CN101414568A (en) * | 2007-10-16 | 2009-04-22 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting equipment parameter filtrating chip conical defect through regulating detect |
| CN102089616A (en) * | 2008-06-03 | 2011-06-08 | 焕·J·郑 | Interferometric defect detection and classification |
| CN102128839A (en) * | 2009-09-25 | 2011-07-20 | 肖特股份有限公司 | Method for detecting defects in a transparent material transparent and a device for same |
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| US6765201B2 (en) * | 2000-02-09 | 2004-07-20 | Hitachi, Ltd. | Ultraviolet laser-generating device and defect inspection apparatus and method therefor |
| US7507598B2 (en) * | 2003-06-06 | 2009-03-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor fabrication method and structure |
| JP4459857B2 (en) * | 2004-12-09 | 2010-04-28 | 東京応化工業株式会社 | Lithographic cleaning liquid and resist pattern forming method using the same |
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| CN101414568A (en) * | 2007-10-16 | 2009-04-22 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting equipment parameter filtrating chip conical defect through regulating detect |
| CN102089616A (en) * | 2008-06-03 | 2011-06-08 | 焕·J·郑 | Interferometric defect detection and classification |
| CN102128839A (en) * | 2009-09-25 | 2011-07-20 | 肖特股份有限公司 | Method for detecting defects in a transparent material transparent and a device for same |
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