CN102427061B - Method for manufacturing array substrate of active matrix organic light-emitting display - Google Patents
Method for manufacturing array substrate of active matrix organic light-emitting display Download PDFInfo
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- CN102427061B CN102427061B CN 201110419047 CN201110419047A CN102427061B CN 102427061 B CN102427061 B CN 102427061B CN 201110419047 CN201110419047 CN 201110419047 CN 201110419047 A CN201110419047 A CN 201110419047A CN 102427061 B CN102427061 B CN 102427061B
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Abstract
The invention discloses a method for manufacturing an array substrate of an active matrix organic light-emitting display. The method comprises the following steps of: providing a substrate; forming a TFT (Thin Film Transistor) on the substrate; continuously depositing a passivation layer on the substrate to cover a source electrode and a drain electrode; forming a photoresist layer on the passivation layer, etching to form a first contact hole exposing the source electrode and the drain electrode, and removing the residual photoresist layer; continuously forming a photosensitive or etching organic planarization layer on the first contact hole, and exposing the organic planarization layer, wherein an exposing mask is a regional light-transmitting mask, the position of the first contact hole is fully exposed, a pixel electrode region A is half exposed, and residual regions are unexposed; finally, forming a pixel electrode on the whole surface of the substrate. Through the method for manufacturing the array substrate of the active matrix organic light-emitting display, disclosed by the invention, the current two times of planarization process is reduced to one time of planarization process, thus one mask process is reduced and the cost can be effectively reduced.
Description
Technical field
The present invention relates to a kind of manufacturing method of array base plate, relate in particular to a kind of manufacturing method of array base plate of active matrix/organic light emitting display.
Background technology
Organic light emitting display (OLED) is the active illuminating device.Compare present main flow flat panel display Thin Film Transistor-LCD (TFT-LCD), OLED has high-contrast, wide viewing angle, low-power consumption, the advantages such as volume is thinner, being expected to become the flat panel display of future generation after LCD, is one of the maximum technology that receives publicity in the present flat panel display.
Fig. 1 is the sectional view of conventional active matrix/organic light emitting display.Have in the method for organic light emitting display of said structure in manufacturing, by a series of semiconductor fabrication process, form the TFT that has resilient coating (not shown), semiconductor 11, regions and source/drain 14-1 and 14-2, gate insulator 12, gate electrode 13, interlayer insulating film 15, through hole 16-1 and 16-2, reaches source/drain electrodes 17-1 and 17-2 at substrate 10.
Then above TFT on the substrate 10, deposit the preferred silicon nitride layer of inorganic layer 18-1() cover source/drain electrodes 17-1,17-2 as passivation layer 18.When after inorganic layer 18-1 forms the photoresist pattern, by using the photoresist pattern as the etch process of mask, form the contact hole or the through hole 19-1 that expose source/drain electrodes 17-2.Then by the oxygen plasma body technology, photoresist stripping technology or other similar technique are removed the photoresist pattern.
Next, after forming light sensitivity or etch pattern first organic planarization layer 18-2 at contact hole 19-1 and forming the photoresist pattern, the photoresist pattern is carried out another mask etch technique, therefore in first organic planarization layer 18-2, form contact hole 19.
Then, after the whole surface at substrate 10 forms electric conducting material, carry out typical photoetching process in company with exposure, development and etch process, form thus pixel electrode 20, it is connected on the source/drain 17-2 by contact hole 19.
Then form second organic planarization layer 21 on the whole surface of substrate 10, thereby cover pixel electrode 20, and formation opening 22 exposes pixel electrode 20; At last, by producing active matrix/organic light emitting display in pixel electrode 20 formation organic layer (not shown) and top electrode (not shown).
The manufacturing method of array base plate of existing active matrix/organic light emitting display, organic planarization layer 18-2 and planarization layer came and do in 21 minutes, needed twice masking process.
Summary of the invention
Technical problem to be solved by this invention provides a kind of manufacturing method of array base plate of active matrix/organic light emitting display, can finish together planarization layer and make, and reaches the purpose that reduces by one mask etching technique, simplifies production procedure.
The present invention solves the problems of the technologies described above the manufacturing method of array base plate that the technical scheme that adopts provides a kind of active matrix/organic light emitting display, comprises the steps: to provide a substrate; Form resilient coating, semiconductor, source region, drain region and gate insulator at substrate; Continue to form gate electrode, interlayer insulating film, source electrode and drain electrode at above-mentioned substrate, described source electrode links to each other with the source region by through hole, and described drain electrode links to each other with the drain region by through hole; Then above above-mentioned substrate, continue deposit passivation layer and cover source electrode and drain electrode; Form photoresist layer at passivation layer and carry out etching, form the first contact hole that exposes drain electrode and remove remaining photoresist layer; Next continue to form light sensitivity or the organic planarization layer of etch pattern at the first contact hole, organic planarization layer is exposed, exposure mask is regional Nonopaque type mask, the position of the first contact hole is full exposure, form the second contact hole, described the second contact hole and the first contact hole connect, and pixel electrode area A is half exposure, and all the other zones are not for exposing; At last, form pixel layer on the whole surface of substrate, utilize exposure, development and etching mode to form pixel electrode, described pixel electrode is connected on the drain electrode by the first contact hole, the second contact hole.
The manufacturing method of array base plate of above-mentioned active matrix/organic light emitting display, wherein, the thickness before described organic planarization layer exposure is 2um～6um.
The manufacturing method of array base plate of above-mentioned active matrix/organic light emitting display, wherein, described passivation layer is silicon nitride layer.
The manufacturing method of array base plate of above-mentioned active matrix/organic light emitting display, wherein, described substrate is glass substrate.
The present invention contrasts prior art following beneficial effect: the manufacturing method of array base plate of active matrix/organic light emitting display provided by the invention, existing twice flatening process is reduced to planarization layer technique one time, reduce masking process one time, can effectively reduce cost.
Description of drawings
Fig. 1 is the schematic cross-section of conventional active matrix/organic light emitting display;
Fig. 2 is that the present invention forms active matrix T FT schematic cross-section;
Fig. 3 is inorganic passivation layer technique schematic cross-section of the present invention;
Fig. 4 is schematic cross-section after the organic planarization layer technique coating of the present invention;
Fig. 5 is schematic cross-section behind the organic planarization layer exposure imaging of the present invention;
Fig. 6 is schematic cross-section after the pixel electrode technique of the present invention.
Among the figure:
10 substrates, 11 semiconductor layers, 12 gate insulators
14-2 drain region, 13 gate electrode 14-1 source region
15 interlayer insulating film 16-1,16-2 through hole 17-1 source electrode
The 17-2 18 passivation layer 18-1 inorganic layers that drain
The organic planarization layer 19 of 18-2,19-1 contact hole 20 pixel electrodes
21 planarization layers, 22 openings
30 substrates, 31 semiconductor layers, 32 gate insulators
34-2 drain region, 33 gate electrode 34-1 source region
35 interlayer insulating film 36-1,36-2 through hole 37-1 source electrode
37-2 38 passivation layers, 39 first contact holes that drain
40 organic planarization layer 41 second contact holes 42 pixel electrodes.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
Fig. 2～Fig. 6 is the schematic cross-section of each processing step of active matrix/organic light emitting display of the present invention.
See also Fig. 2, one substrate 30 is provided, such as glass substrate, by a series of semiconductor fabrication process, form the TFT with resilient coating (not shown), semiconductor 31, regions and source/drain 34-1 and 34-2, gate insulator 32, gate electrode 33, interlayer insulating film 35, through hole 36-1 and 36-2, source electrode 37-1 and drain electrode 37-2 at substrate 30.
As shown in Figure 3, then above TFT on the substrate 30, deposit inorganic layer (preferred silicon nitride layer) and cover source electrode 37-1 and drain electrode 37-2 as inorganic passivation layer 38; When after inorganic passivation layer 38 forms the photoresist pattern, by using the photoresist pattern as the etch process of mask, form the first contact hole 39 that exposes source electrode 37-1 or drain electrode 37-2; Then by the oxygen plasma body technology, photoresist stripping technology or other similar technique are removed the photoresist pattern.
As shown in Figure 4, next, when forming light sensitivity or the organic planarization layer 40 of etch pattern at the first contact hole 39.The material of existing organic planarization layer 18-2 and planarization layer 21 can be the same, also can be different; The Main Function of planarization layer is to play smooth effect at the different medium interlayer, is convenient to the making of succeeding layer, but prerequisite is that certain thickness is arranged, and therefore the thickness of planarization layer of the present invention is preferably traditional sum of the two, to reach the requirement of two planarizations; Be 2 ± 1um such as both traditional thickness; Therefore thickness of the present invention is preferably 4 ± 2um.
As shown in Figure 5, organic planarization layer 40 is exposed, exposure mask is regional Nonopaque type mask, it is full exposure in the position of the first contact hole 39, form the second contact hole 41 that connects with the first contact hole, pixel electrode area A is half exposure, and all the other zones are not for exposing.
As shown in Figure 6, after the whole surface of substrate 30 forms the pixel electrode material layer, carry out typical photoetching process in company with exposure, development and etch process, form thus pixel electrode 42, described pixel electrode 42 is connected on the drain electrode 37-2 by the first contact hole 39, the second contact hole 41.At last, by producing active matrix/organic light emitting display in pixel electrode 42 formation organic luminous layer (not shown) and top electrode (not shown).
In sum, the manufacturing method of array base plate of active matrix/organic light emitting display provided by the invention is reduced to planarization layer technique one time with existing twice flatening process, has reduced masking process one time, can effectively reduce cost.
Although the present invention discloses as above with preferred embodiment; so it is not to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little modification and perfect, so protection scope of the present invention is when with being as the criterion that claims were defined.
Claims (4)
1. the manufacturing method of array base plate of an active matrix/organic light emitting display is characterized in that, comprises the steps:
One substrate (30) is provided;
Form resilient coating, semiconductor layer (31), source region (34-1), drain region (34-2) and gate insulator (32) at substrate (30);
Continue to form gate electrode (33), interlayer insulating film (35), source electrode (37-1) and drain electrode (37-2) at above-mentioned substrate (30), described source electrode (37-1) links to each other with source region (34-1) by through hole (36-1), and described drain electrode (37-2) links to each other with drain region (34-2) by through hole (36-2);
Then continue deposit passivation layer (38) in above-mentioned substrate (30) top and cover source electrode (37-1) and drain electrode (37-2); Form photoresist layer at passivation layer (38) and carry out etching, form the first contact hole (39) that exposes drain electrode and remove remaining photoresist layer;
Next continue to form light sensitivity or the organic planarization layer of etch pattern (40) at the first contact hole (39), organic planarization layer (40) is exposed, exposure mask is regional Nonopaque type mask, the position of the first contact hole (39) is full exposure, form the second contact hole (41), described the second contact hole (41) and the first contact hole (39) connect, and pixel electrode area A is half exposure, and all the other zones are not for exposing;
At last, form transparency conducting layer on the whole surface of substrate (30), utilize exposure, development and etching mode to form pixel electrode (42), described pixel electrode (42) is connected on the drain electrode by the first contact hole (39), the second contact hole (41).
2. the manufacturing method of array base plate of active matrix/organic light emitting display as claimed in claim 1 is characterized in that, the thickness before described organic planarization layer (40) exposure is 2um～6um.
3. the manufacturing method of array base plate of active matrix/organic light emitting display as claimed in claim 1 is characterized in that, described passivation layer (38) is silicon nitride layer.
4. such as the manufacturing method of array base plate of each described active matrix/organic light emitting display of claim 1～3, it is characterized in that described substrate (30) is glass substrate.
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| CN 201110419047 CN102427061B (en) | 2011-12-15 | 2011-12-15 | Method for manufacturing array substrate of active matrix organic light-emitting display |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104465509B (en) * | 2013-09-18 | 2017-08-04 | 昆山国显光电有限公司 | A kind of OLED display device array base palte and preparation method thereof |
| CN103928343B (en) * | 2014-04-23 | 2017-06-20 | 深圳市华星光电技术有限公司 | Thin film transistor (TFT) and organic light emitting diode display preparation method |
| CN104112711B (en) * | 2014-07-22 | 2017-05-03 | 深圳市华星光电技术有限公司 | Manufacturing method of coplanar oxide semiconductor TFT (Thin Film Transistor) substrate |
| TW201612606A (en) * | 2014-09-29 | 2016-04-01 | Au Optronics Corp | Fabricating methods of pixel structure and liquid crystal display panel |
| CN108064414A (en) * | 2016-11-23 | 2018-05-22 | 深圳市柔宇科技有限公司 | The manufacturing method of array substrate |
| KR20200117101A (en) * | 2019-04-02 | 2020-10-14 | 삼성디스플레이 주식회사 | Display device |
| CN111128875B (en) * | 2019-12-20 | 2022-07-12 | 武汉华星光电半导体显示技术有限公司 | Preparation method of flexible array substrate and flexible array substrate |
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| CN1596045A (en) * | 2003-09-12 | 2005-03-16 | 株式会社半导体能源研究所 | Light emitting device and method for manufacturing the same |
| CN102116980A (en) * | 2009-12-31 | 2011-07-06 | 乐金显示有限公司 | Thin film transistor array substrate and method for fabricating the same |
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| KR100611148B1 (en) * | 2003-11-25 | 2006-08-09 | 삼성에스디아이 주식회사 | Thin Film Transistors, method of manufacturing thereof and an Electroluminescent display device |
| KR101345171B1 (en) * | 2007-11-14 | 2013-12-27 | 엘지디스플레이 주식회사 | Liquid crystal display device and method of fabricating the same |
| KR100964227B1 (en) * | 2008-05-06 | 2010-06-17 | 삼성모바일디스플레이주식회사 | Thin film transistor array substrate for flat panel display device, organic light emitting display device comprising the same, and manufacturing thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1596045A (en) * | 2003-09-12 | 2005-03-16 | 株式会社半导体能源研究所 | Light emitting device and method for manufacturing the same |
| CN102116980A (en) * | 2009-12-31 | 2011-07-06 | 乐金显示有限公司 | Thin film transistor array substrate and method for fabricating the same |
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