CN102424958A - Deposition equipment and method for continuously manufacturing metal thin-film solar cells - Google Patents
Deposition equipment and method for continuously manufacturing metal thin-film solar cells Download PDFInfo
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- CN102424958A CN102424958A CN2011103655406A CN201110365540A CN102424958A CN 102424958 A CN102424958 A CN 102424958A CN 2011103655406 A CN2011103655406 A CN 2011103655406A CN 201110365540 A CN201110365540 A CN 201110365540A CN 102424958 A CN102424958 A CN 102424958A
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- metal gas
- organic metal
- gas
- gallium arsenide
- deposition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention relates to an organic metal gas gas deposition system, in particular to organic metal gas gas deposition equipment and an organic metal gas gas deposition method for continuously manufacturing metal thin-film gallium arsenide solar cells. The equipment comprises a large vacuum cavity and an auxiliary vacuum gas exhaust device, wherein at least a continuous metal thin film automatic discharging and expanding system, a receiving system, a deposition reaction area, a metal gas deposition reactor, a spray nozzle combination used for spraying an organic metal gas uniformly and a substrate heating platform are isolated in the vacuum cavity; the deposition reaction area is positioned between the discharging and expanding system and the receiving system; the metal gas deposition reactor and the spray nozzle combination for uniformly spraying organic metal gas are positioned above the deposition reaction area; and the heating platform is arranged below the deposition reaction area. The equipment adopts coiled band type metal thin film to manufacture gallium arsenide solar cells continuously, thereby greatly improving production efficiency and considerably reducing the manufacturing cost of the gallium arsenide solar cells.
Description
Technical field
The present invention relates to the organic metal gas gas-phase precipitation system, be specifically related to a kind of deposition apparatus and method that is used for making continuously the mf solar cell.
Background technology
Gallium arsenide solar cell is the highest kinds of all solar cell photoelectric efficiency of conversion, and temperature tolerance is good.High-effect gallium arsenide solar cell is that N p type gallium arensidep material and P p type gallium arensidep material successively are deposited on the gallium arsenide substrate; The interface of two kinds of different electrical storerooms can opto-electronic conversion make sunshine convert electric current and output to, and wherein the baseplate material of gallium arsenide solar cell is a gallium arsenide wafer.
Present traditional organic metal gas gas-phase precipitation system is that the substrate heating platform of circular vacuum reaction chamber the inside once can be installed 39 2 inch gallium arsenide wafers; In once basic manufacturing processed from beginning that reaction chamber is evacuated to vacuum, substrate heating, gas vapor deposition processing procedure, cooling; Approximately need four hours, but deposit output 2.5cm * 2.5cm * 3.1416 * 39=765.765cm within four hours just
2Or the gallium arsenide solar cell sheet of 1 * 1 * 3.1416 * 39=122.5224 square of inch.Every price of substrate material 2 inch gallium arsenide wafers that this system uses is in the price that equals about 110 dollars about 5.71 dollars every square centimeter; Cost is very high; And the big output that consumes energy is little, can only be used on some precision instruments of passing over cost and the space equipment and use.
How reducing the gallium arsenide solar cell production cost, improve output, cost for solar power generation is reduced to below every watt one dollar (W/USD), is the maximum target of photovoltaic industry research innovation.
Summary of the invention
The present invention is directed to the weak point of above-mentioned prior art; A kind of deposition apparatus and method that is used for making continuously the metallic film solar cell proposed; A kind of equipment and process of on metallic film, making gallium arsenide solar cell with the organic metal gas gas-phase deposition method continuously promptly is provided; This method utilization organic metal gas vapor deposition side makes the equipment and the technology of gallium arsenide solar cell continuously at the coil type metallic film; Bring completely for photovoltaic product cost price and improve, promptly improved production efficiency greatly, the reduction of big spoke degree the gallium arsenide solar cell manufacturing cost.
The object of the invention is realized being accomplished by following technical scheme:
A kind of deposition apparatus that is used for making continuously the mf solar cell is characterized in that: said equipment comprises a large-scale vacuum chamber and attached vacuum pumping hardware thereof; Completely cut off and in said vacuum chamber, have at least: continuity mf self-emptying exhibition material system and material-receiving system like lower device; The deposit reaction zone; The metal gas deposition reactor, and be used for evenly spraying the spout combination of organic metal gas; The base material heating platform; Wherein said deposit reaction zone is between said discharging exhibition material system and material-receiving system; The spout combination that said metal gas deposition reactor and being used to is sprayed organic metal gas is positioned at the top of said deposit reaction zone, and the below of described deposit reaction zone is provided with said heating platform.
Described metal gas deposition reactor comprises that at least two cover N type organic metal gas deposition reactor and at least two overlap P type organic metal gas deposition reactor, each overlap the said deposit reaction zone of said metal gas mixing reactor in said vacuum chamber above be N-P-N-P-N successively ... Type is staggered successively vertical, spaced apart.
Described metal gas deposition reactor comprises three cover N type organic metal gas deposition reactor and two cover P type organic metal gas deposition reactor, and it is vertical, spaced apart to be the N-P-N-P-N type successively above the said deposit reaction zone of the five said metal gas mixing reactors of cover in said vacuum chamber.
Said vacuum chamber outer wall near said material-receiving system place is provided with observation window, and in described elongated vacuum chamber, is provided with vacuumometer and system for measuring temp in order to measure and control heating platform temperature.
A kind of deposition process that is used for making continuously the mf solar cell; Relate to each said equipment of claim 1-4; It is characterized in that; Said method comprises the following steps: at least that said continuity mf self-emptying exhibition material system slowly discharges with controllable speed and expands mf; Through said deposit reaction zone, the spout combination that said metal gas deposition reactor and being used to is sprayed organic metal gas evenly is sprayed to the mf surface with the blended organic metal gas to mf by drawing, and the organic metal gas deposit also is reacted into the GaAs material layer; The mf heating platform is with the mode heating metal film of direct contact; Be heated to the temperature of a setting,, become the mf of the different electrical interface of long number layer to be furled later by said material-receiving system through continuous several secondary responses so that facilitate organic metal gas deposit and reaction.
Said discharging is opened up the material system and is launched the speed of mf and the speeds match that material-receiving system furls mf, and speed is controlled the thickness of growth solar cell thus.
Advantage of the present invention is, reduced manufacturing gallium arsenide solar cell cost, improved production efficiency, but mass puts into production.With traditional apparatus in comparison, being used for the organic metal gas cost of deposit processing procedure all similarly under the situation, differ nearly 25 times production rate, and the base material cost is less than one of seven percentages of traditional base material cost.The organic metal gas gas-phase precipitation system that the present invention relates to is used for making continuously coil type mf gallium arsenide solar cell will be improved to bringing on the photovoltaic product cost price completely; Have an opportunity cost for solar power generation is reduced in than every watt of cost below 1.1 dollars of general traditional thermal power generation; Just have an opportunity to make its large-scale popularization, to replace the thermal power generation industry of tradition power consumption blowdown (carbonic acid gas).
Description of drawings
Fig. 1 is a vacuum chamber structural representation of the present invention;
Fig. 2 is invention mf self-emptying exhibition material and material-receiving system structural representation;
Fig. 3 is a N type organic metal gas mixing reactor work system structural representation of the present invention;
Fig. 4 is a P type organic metal gas mixing reactor work system structural representation of the present invention.
Embodiment
Through embodiment characteristic of the present invention and other correlated characteristic are done further explain below in conjunction with accompanying drawing, so that technician's of the same trade understanding:
Label 1-20 representes respectively among the accompanying drawing 1-4: vacuum chamber 1; Mf rolls out material exhibition material wheel shaft 2; Dry vacuum exhaust pumping 3; Treat depositing metal film 4; N type organic metal gas mixing reactor 5; P type organic metal gas mixing reactor 6; The depositing metal film 7; Film surface inspection image slot 8; Mf furls material wheel shaft 9; Base material heating platform 10; Organic metal gas 11; Organic metal gas 12; Cooling water recirculation system 13; Nozzles combine 14; Vacuumometer 15; Base material temperature inspection (quartz column) 16; Temperature sensing output point 17; Information output point 18; Electric power input point 19; Discharge directions 20; Vent gas treatment machine 21.
Shown in Fig. 1-4; Present embodiment is provided with the vacuum chamber 1 of an elongated, and portion carries out the operation of organic metal gas deposit within it, is symmetrical set two coupled logical vacuum pump 3 in elongated vacuum chamber 1 bottom; Can realize rapid vacuumizing; By electric power input point 19, control signal and other information input point, and the inside and outside transmission in other chamber accessory; Comprise vacuumometer 15, base material temperature inspection (quartz column) 16, temperature sensing output point 17, information output point 18 etc., processing apparatus guarantees that processing procedure accordings to the various conditions of setting and accurately carry out processing procedure in the control vacuum chamber.And write down the GaAs material laminar surface constructional aspect of having grown up with shooting from mf surface inspection image slot 8.
Both ends are set up mf respectively and are rolled out material exhibition material wheel shaft 2 and furl material wheel shaft 9 with mf in elongated vacuum chamber 1; And two axles connected respectively be positioned at the outer adjustable speed power system of vacuum chamber 1 cavity; Thereby constitute continuity mf self-emptying exhibition material system and material-receiving system; Mf rolls out the material exhibition and expects that it is the deposit reaction zone that wheel shaft 2 and mf furl the zone of expecting between the wheel shaft 9; Be positioned at the base material heating platform 10 of even laying at interval in this regional mf below and the contacted adjustable temperature of mf; Mf is directly touched the temperature that is heated to a setting; So that facilitate organic metal gas deposit and reaction; Be positioned at this regional mf N of setting gradually type spaced above organic metal gas mixing reactor 5, P type organic metal gas mixing reactor 6 and N type organic metal gas mixing reactor 5, three above-mentioned mixing reactors are communicated with the long-pending nozzles combine 14 of organic metal gas pad respectively, and this nozzles combine 14 can evenly be sprayed to mf with the blended organic metal gas in the mixing reactor 5.
Present embodiment relates to equipment when concrete production; Continuity mf self-emptying exhibition material system and material-receiving system in the elongated vacuum chamber 1; Can roll out material exhibition material wheel shaft 2 through mf with controllable speed slowly discharges and treats depositing metal film 4; At heatable deposit reaction zone, accept organic metal gas and mix the back deposit and be reacted into the GaAs material layer, reaction later through mf furl material wheel shaft 9 depositing metal film 7 furl.
Wherein in heatable deposit reaction zone; N type organic metal gas mixing reactor 5 and P type organic metal gas mixing reactor 6 let can accurate dominant discharge special organic metal gas 11,12 get into and uniform mixing, spray through nozzles combine 14 and get into the deposit reaction zones:
2GaCl
3?+3H
2+?AsH
3?=?2GaAs
(s)?+6?HCl
(g)+?H
2(g)。
The organic metal gas 11 that gets into P type organic metal gas mixing reactor 6 is: 2 GaCl
3+ 3 H
2 Organic metal gas 12 is: SiH
4+ AsH
3+ H
2, come the electrical gallium arsenide layer of deposit P type, wherein organic metal gas mixes gas SiH at gas mixer and P type
4Send into reaction zone after filling part mixing, gas mixer remains on room temperature 25
OC.
Therefore the deposit of positive polarity gallium arsenide layer-p type gaas layer reaction:
2GaCl
3?+3H
2+?AsH
3?=?2GaAs
(s)?+6?HCl
(g)?+?H
2(g)?。
+ positive polarity is mixed gas SiH
4 (g)
The organic metal gas 11 that gets into N type organic metal gas mixing reactor 5 is: 2 GaCl
3+ 3 H
2 Organic metal gas 12 is: Zn (C
2H
5)
2+ AsH
3+ H
2, come the electrical gallium arsenide layer of deposit N type, wherein organic metal gas mixes gas Zn (C at gas mixer and N type
2H
5)
2Send into reaction zone after filling part mixing, gas mixer remains on room temperature 25
OC.
Therefore the deposit of electronegativity gallium arsenide layer-n type gaas layer reaction:
2GaCl
3?+3H
2+?AsH
3?=?2GaAs
(s)?+6?HCl
(g)?+?H
2(g)?。
+ electronegativity is mixed gas Zn (C
2H
5)
2
Form a different electrical interface layer between an above-mentioned N type and the P p type gallium arensidep material layer, obviously the N-P-N-P type reactor that is provided with at interval successively in the present embodiment is laid mode, has formed two different electric bed boundarys.
Can increase one deck P p type gallium arensidep material layer again like three interface layers of desire formation is N-P-N-P, and then the reactor drum in its reaction zone is laid mode and can be adopted the N-P-N-P type reactor drum laying mode that is provided with at interval.Forming the 3rd later interface layer,, do not met economic principle compared with the organic metal gas expense that is increased consumption, so make three different electrical interface layer usually at most because the photoelectric transformation efficiency that increases is very limited.
Let the blended organic metal gas, evenly be sprayed to the long-pending nozzles combine 14 of organic metal gas pad of mf, supporting with it must have a closed circuit cooling water recirculation system 13, to prevent the too early deposit reaction of blended GaAs material.
The transmission system that present embodiment relates to equipment is conducted into the outer adjustable speed power system of vacuum chamber 1 cavity and drives continuity mf self-emptying exhibition material system and material-receiving system in the vacuum chamber; Being mf rolls out material exhibition material wheel shaft 2 and furls material wheel shaft 9 with mf power is provided; Discharge directions 20 is each dry vacuum group Pu exhaust focussing direction; And deliver vent gas treatment machine 21 wherein the gallium arsenide of contained residue unreacted remove clean to the greatest extent; Make exhaust free from environmental pollution, reach environmental requirement.
Present embodiment is compared with present conventional art; For example present traditional organic metal gas gas-phase precipitation system is that the base material heating platform of circular vacuum reaction chamber the inside once can be installed 39 2 inch gallium arsenide chips, and once basic processing procedure is from beginning to vacuumize heating; The deposit processing procedure; Cooling, about four hours, but deposit output 2.5cm * 2.5cm * 3.1416X39=765.765cm within four hours just
2The gallium arsenide solar cell sheet of square centimeter or 1 * 1 * 3.1416X39=122.5224 square of inch.
And the deposition system of present embodiment can produce out coil type mf gallium arsenide battery sheet at 45cm * 100cm * 4=18 within four hours, 000cm
2=2752 squares of inch, its output significantly increase by 25 times.
Every price of substrate material 2 inch gallium arsenide chips that traditional organic metal gas gas-phase precipitation system uses equals 5.71 dollars every square centimeter, very high price at 110 dollars.
And present embodiment is with the very cheap mf of cost; With stainless steel film; 3.2 square centimeters of areas of the stainless steel sheet of thickness 0.26mm, weight just has 1 kilogram, 20 dollars of per kilograms; Average every square centimeter less than 0.07 fen dollar cost, just the mf base material has only the cost of gallium arsenide chip 1/700.
So the present invention and traditional compared with techniques; Be used under all similar situation of organic metal gas cost of deposit processing procedure; Differ nearly 25 times production rate, mix base material cost, use the organic metal gas gas-phase precipitation system of technical scheme structure of the present invention to be used for making continuously coil type mf gallium arsenide solar cell less than 71 percent prices; To bring completely to photovoltaic product cost price and improve; Have an opportunity cost for solar power generation is reduced in than every watt of cost below 1.1 dollars of general traditional thermal power generation, the large-scale popularization of just having an opportunity to realize is to replace the thermal power generation industry of tradition power consumption blowdown (carbonic acid gas).
Claims (6)
1. organic metal gas vapor deposition device that is used for making continuously the mf gallium arsenide solar cell, it is characterized in that: said equipment comprises a large-scale vacuum chamber and attached vacuum pumping hardware thereof; Completely cut off and in said vacuum chamber, have at least: continuity mf self-emptying exhibition material system and material-receiving system like lower device; The deposit reaction zone; The metal gas deposition reactor, and be used for evenly spraying the spout combination of organic metal gas; The base material heating platform; Wherein said deposit reaction zone is between said discharging exhibition material system and material-receiving system; The spout combination that said metal gas deposition reactor and being used to is sprayed organic metal gas is positioned at the top of said deposit reaction zone, and the below of described deposit reaction zone is provided with said heating platform.
2. a kind of organic metal gas vapor deposition device that is used for making continuously the mf gallium arsenide solar cell according to claim 1; It is characterized in that described metal gas deposition reactor comprises that at least two cover N type organic metal gas deposition reactor and at least two overlap P type organic metal gas deposition reactor, each overlap the said deposit reaction zone of said metal gas mixing reactor in said vacuum chamber above be N-P-N-P-N successively ... Type is staggered successively vertical, spaced apart.
3. a kind of organic metal gas vapor deposition device that is used for making continuously the metallic film gallium arsenide solar cell according to claim 2; It is characterized in that described metal gas deposition reactor comprises three cover N type organic metal gas deposition reactor and two cover P type organic metal gas deposition reactor, it is vertical, spaced apart to be the N-P-N-P-N type successively above the said deposit reaction zone of the five said metal gas mixing reactors of cover in said vacuum chamber.
4. a kind of organic metal gas vapor deposition device that is used for making continuously the mf gallium arsenide solar cell according to claim 1; It is characterized in that being provided with observation window, and in described elongated vacuum chamber, be provided with vacuumometer and system for measuring temp in order to measure and control heating platform temperature near the said vacuum chamber outer wall at said material-receiving system place.
5. organic metal gas gas-phase deposition method that is used for making continuously the mf gallium arsenide solar cell; Relate to each said equipment of claim 1-4; It is characterized in that; Said method comprises the following steps: at least that said continuity mf self-emptying exhibition material system slowly discharges with controllable speed and expands mf; Through said deposit reaction zone, the spout combination that said metal gas deposition reactor and being used to is sprayed organic metal gas evenly is sprayed to the mf surface with the blended organic metal gas to mf by drawing, and the organic metal gas deposit also is reacted into the GaAs material layer; The mf heating platform is with the mode heating metal film of direct contact; Be heated to the temperature of a setting,, become the mf of the different electrical interface of long number layer to be furled later by said material-receiving system through continuous several secondary responses so that facilitate organic metal gas deposit and reaction.
6. a kind of organic metal gas gas-phase deposition method that is used for making continuously the mf gallium arsenide solar cell according to claim 5; It is characterized in that said discharging exhibition material system launches the speed of mf and the speeds match that material-receiving system furls mf, speed is controlled the thickness of growth solar cell thus.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103655406A CN102424958A (en) | 2011-11-17 | 2011-11-17 | Deposition equipment and method for continuously manufacturing metal thin-film solar cells |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103655406A CN102424958A (en) | 2011-11-17 | 2011-11-17 | Deposition equipment and method for continuously manufacturing metal thin-film solar cells |
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| CN102424958A true CN102424958A (en) | 2012-04-25 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8834963B2 (en) | 2013-01-11 | 2014-09-16 | International Business Machines Corporation | Method for applying material to a surface |
| CN104233236A (en) * | 2013-06-17 | 2014-12-24 | 沙嫣 | PECVD furnace with double-high vacuum pump system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101415862A (en) * | 2006-03-29 | 2009-04-22 | 伊斯曼柯达公司 | Apparatus for atomic layer deposition |
| CN201501927U (en) * | 2009-08-12 | 2010-06-09 | 陈聪茂 | Vertical chemical vapor deposition device |
| CN102165100A (en) * | 2008-09-26 | 2011-08-24 | 东京毅力科创株式会社 | Film formation device and substrate processing apparatus |
-
2011
- 2011-11-17 CN CN2011103655406A patent/CN102424958A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101415862A (en) * | 2006-03-29 | 2009-04-22 | 伊斯曼柯达公司 | Apparatus for atomic layer deposition |
| CN102165100A (en) * | 2008-09-26 | 2011-08-24 | 东京毅力科创株式会社 | Film formation device and substrate processing apparatus |
| CN201501927U (en) * | 2009-08-12 | 2010-06-09 | 陈聪茂 | Vertical chemical vapor deposition device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8834963B2 (en) | 2013-01-11 | 2014-09-16 | International Business Machines Corporation | Method for applying material to a surface |
| US9527107B2 (en) | 2013-01-11 | 2016-12-27 | International Business Machines Corporation | Method and apparatus to apply material to a surface |
| CN104233236A (en) * | 2013-06-17 | 2014-12-24 | 沙嫣 | PECVD furnace with double-high vacuum pump system |
| CN104233236B (en) * | 2013-06-17 | 2016-08-10 | 沙嫣 | A kind of PECVD stove with double high-vacuum pump system |
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Application publication date: 20120425 |