CN102420571A - Bipolar amplifier - Google Patents

Bipolar amplifier Download PDF

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Publication number
CN102420571A
CN102420571A CN2011103730464A CN201110373046A CN102420571A CN 102420571 A CN102420571 A CN 102420571A CN 2011103730464 A CN2011103730464 A CN 2011103730464A CN 201110373046 A CN201110373046 A CN 201110373046A CN 102420571 A CN102420571 A CN 102420571A
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China
Prior art keywords
triode
main
base stage
amplifier
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CN2011103730464A
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Chinese (zh)
Inventor
邹闽中
万川川
张�浩
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NANJING GUORUI JIAYUAN MICROELECTRONICS CO Ltd
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NANJING GUORUI JIAYUAN MICROELECTRONICS CO Ltd
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Priority to CN2011103730464A priority Critical patent/CN102420571A/en
Publication of CN102420571A publication Critical patent/CN102420571A/en
Pending legal-status Critical Current

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Abstract

The invention provides a bipolar amplifier, which comprises a main triode, a blocking capacitor and a bias circuit, wherein the upper end of the blocking capacitor is connected with a base electrode of the main triode, an emitter of the main triode is grounded, a collector electrode of the main triode is connected with a voltage outlet end, the bias circuit is connected with the base electrode of the main triode, the bias circuit comprises a grounding resistor, a current signal source and two triodes, one end of the current signal source is connected with a base electrode of the second triode, a base electrode of the first triode is connected with an emitter of the second triode, a collector electrode of the first triode is connected with the base electrode of the second triode, the base electrode of the first triode is connected with the base electrode of the main triode, the base electrode of the first triode is also connected with the grounding resistor, the other end of the grounding resistor is grounded, and an emitter of the first triode is grounded. According to the invention, the bipolar amplifier is designed, and the safe operation scope of the bipolar amplifier can be enlarged through the bias circuit of the device.

Description

A kind of ambipolar amplifier
Technical field
The present invention relates to a kind of microelectronics and use amplifier, particularly a kind of ambipolar amplifier.
?
Background technology
Ambipolar amplifier is widely used in wireless communication system, and in the high power amplifier circuit design, the range of safety operation of bipolar transistor is the problem that needs are considered.Because circuit in the course of the work, the transient voltage between powerful bipolar tube port might surpass the tolerance range of bipolar tube, therefore can cause components from being damaged.
 
Summary of the invention
To above problem, the present invention can enlarge the range of safety operation of ambipolar amplifier through a kind of ambipolar amplifier of design through this device biasing circuit; For reaching this purpose, the present invention provides a kind of ambipolar amplifier, comprises main triode, capacitance and biasing circuit; Said capacitance upper end links to each other with main transistor base, said main transistor emitter ground connection, and main transistor collector links to each other with voltage output end; Said biasing circuit links to each other with main transistor base, and said biasing circuit comprises earth resistance, current signal source and two triodes, and said current signal source one end links to each other with second transistor base; Said first transistor base links to each other with second transistor emitter; Said first transistor collector links to each other with second transistor base, and said first transistor base links to each other with main transistor base, and said first transistor base also is connected with earth resistance; Said earth resistance other end ground connection, the said first transistor emitter ground connection.
The present invention is through a kind of ambipolar amplifier of design; Can guarantee that its its resistance under various operating states all satisfies
Figure 906353DEST_PATH_IMAGE002
; Thereby can enlarge the range of safety operation of the ambipolar amplifier of this patent; This patent expansion circuit structure is simple in addition; Under the prerequisite that does not increase extra power consumption; According to the characteristics of bias structure, utilize its impedance operator cleverly, enlarged the range of safety operation of amplifier.
 
Description of drawings
Fig. 1 is a catenation principle sketch map of the present invention;
Member among the figure is:
1, main triode; 2, capacitance; 3, earth resistance;
4, current signal source; 5-1, first triode; 5-2, second triode;
Embodiment
Below in conjunction with accompanying drawing and embodiment detailed explanation is done in invention:
The present invention can enlarge the range of safety operation of ambipolar amplifier through a kind of ambipolar amplifier of design through this device biasing circuit.
A kind of specific embodiment the present invention provides the catenation principle sketch map a kind of ambipolar amplifier as shown in Figure 1 as this patent, comprises main triode 1, capacitance 2, voltage signal source, power end and biasing circuit, said voltage signal source one end ground connection; The voltage signal source other end and capacitance 2 lower ends; Said capacitance 2 upper ends link to each other with main triode 1 base stage, said main triode 1 grounded emitter, and main triode 1 collector electrode links to each other with voltage output end; Said biasing circuit is connected between power end and main triode 1 base stage; Said biasing circuit comprises earth resistance 3, current signal source 4 and two triodes, and two outputs of said power end link to each other with current signal source 4 one ends with the second triode 5-2 collector electrode respectively, and said current signal source 4 other ends link to each other with the second triode 5-2 base stage; The said first triode 5-1 base stage links to each other with the second triode 5-2 emitter; The said first triode 5-1 collector electrode links to each other with the second triode 5-2 base stage, and the said first triode 5-1 base stage links to each other with main triode 1 base stage, and the said first triode 5-1 base stage also is connected with earth resistance 3; Said earth resistance 3 other end ground connection; The said first triode 5-1 grounded emitter has built-in resistor in the said voltage signal source, with to its protective effect of circuit.
Because the range of safety operation and the base bias circuit of ambipolar amplifier are closely related; This patent has proposed a kind of circuit that enlarges the range of safety operation of ambipolar amplifier; Its circuit diagram is as shown in Figure 1; Main triode 1 is the main circuit of amplifier among the figure, the biasing circuit that proposes for this patent in the frame of broken lines.
In the normal circuit along with the increase of bipolar tube output voltage, between the collector electrode of bipolar tube and base stage, can produce one like Fig. 1 in Iav, avalanche current shown in the promptly main triode 1, avalanche current are the main factors that limits ambipolar amplifier range of safety operation.Avalanche current Iav has two flow directions of Iav1 and Iav2 in main triode 1, if Iav2 is excessive, produces bigger drain current through meeting after main triode 1 amplification, and then produce bigger avalanche current Iav.Because this is the process of a positive feedback, therefore can cause the puncture of main triode 1.
Therefore the key issue of this patent is farthest to reduce the amount of Iav2; Iav1 flows away from the path to let Iav; This just depends on the magnitude relationship of the equivalent resistance R1 and the main triode 1 base stage equivalent resistance R2 of its biasing circuit; According to knowing its resistance
Figure 761177DEST_PATH_IMAGE004
behind this patent biasing circuit, wherein R1 depends on the operating state of circuit.
When circuit was in off state, the collector current on the main triode 1 was minimum, though the about hundreds of of R1 ≈ Rt kilohm, R1 is still much smaller than R2, and avalanche current flows to biasing circuit through the Iav1 path basically;
When circuit is in static conducting state,
Figure 2011103730464100002DEST_PATH_IMAGE006
;
When circuit is in the interchange conducting state; R1 is ac-coupled to Vin through capacitance,
Figure 2011103730464100002DEST_PATH_IMAGE008
.
This circuit all satisfies
Figure 914815DEST_PATH_IMAGE002
under various operating states; To guarantee that avalanche current flows into main triode 1 without Iav2 basically and causes positive feedback; Therefore this circuit can bear bigger operating voltage range; Thereby can enlarge the range of safety operation of the ambipolar amplifier of this patent; To enlarge circuit structure simple for this patent in addition, under the prerequisite that does not increase extra power consumption, cleverly according to the characteristics of bias structure; Utilize its impedance operator, enlarged the range of safety operation of amplifier.
The above only is preferred embodiment of the present invention, is not to be the restriction of the present invention being made any other form, and according to any modification or equivalent variations that technical spirit of the present invention is done, still belongs to the present invention's scope required for protection.

Claims (1)

1. ambipolar amplifier; Comprise main triode (1), capacitance (2) and biasing circuit, said capacitance (2) upper end links to each other said main triode (1) grounded emitter with main triode (1) base stage; Main triode (1) collector electrode links to each other with voltage output end; Said biasing circuit links to each other with main triode (1) base stage, it is characterized in that: said biasing circuit comprises earth resistance (3), current signal source (4) and two triodes, and said current signal source (4) one ends link to each other with second triode (5-2) base stage; Said first triode (5-1) base stage links to each other with second triode (5-2) emitter; Said first triode (5-1) collector electrode links to each other with second triode (5-2) base stage, and said first triode (5-1) base stage links to each other with main triode (1) base stage, and said first triode (5-1) base stage also is connected with earth resistance (3); Said earth resistance (3) other end ground connection, said first triode (5-1) grounded emitter.
CN2011103730464A 2011-11-22 2011-11-22 Bipolar amplifier Pending CN102420571A (en)

Priority Applications (1)

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CN2011103730464A CN102420571A (en) 2011-11-22 2011-11-22 Bipolar amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011103730464A CN102420571A (en) 2011-11-22 2011-11-22 Bipolar amplifier

Publications (1)

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CN102420571A true CN102420571A (en) 2012-04-18

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN87100144A (en) * 1987-01-10 1988-07-20 张喜来 The crystal amplifier of highly stabilized operating point
US6259324B1 (en) * 2000-06-23 2001-07-10 International Business Machines Corporation Active bias network circuit for radio frequency amplifier
CN1318898A (en) * 2000-03-28 2001-10-24 株式会社东芝 High-frequency power amplifier with bipolar transistor
CN1381091A (en) * 2000-03-28 2002-11-20 皇家菲利浦电子有限公司 Dynamic bias boosting circuit for power amplifier
CN101023579A (en) * 2004-09-21 2007-08-22 皇家飞利浦电子股份有限公司 Peak voltage protection circuit and method
CN202364179U (en) * 2011-11-22 2012-08-01 南京国睿嘉源微电子有限公司 Bipolar amplifier

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN87100144A (en) * 1987-01-10 1988-07-20 张喜来 The crystal amplifier of highly stabilized operating point
CN1318898A (en) * 2000-03-28 2001-10-24 株式会社东芝 High-frequency power amplifier with bipolar transistor
CN1381091A (en) * 2000-03-28 2002-11-20 皇家菲利浦电子有限公司 Dynamic bias boosting circuit for power amplifier
JP2003529264A (en) * 2000-03-28 2003-09-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Dynamic bias boost circuit for power amplifier
US6259324B1 (en) * 2000-06-23 2001-07-10 International Business Machines Corporation Active bias network circuit for radio frequency amplifier
CN101023579A (en) * 2004-09-21 2007-08-22 皇家飞利浦电子股份有限公司 Peak voltage protection circuit and method
CN202364179U (en) * 2011-11-22 2012-08-01 南京国睿嘉源微电子有限公司 Bipolar amplifier

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOSE A.GARCIA RIVERA: "Design and Implementation of a Four Terminal Floating Amplifier and its Application in Analog Electronics", 《MASTERS ABSTRACTS INTERNATIONAL》, 31 December 2005 (2005-12-31), pages 1 - 167 *

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Address after: 210019, 10, Dajiang Road, Yuhua Economic and Technological Development Zone, Nanjing, Jiangsu

Applicant after: Nanjing Meichen Microelectronic Co., Ltd.

Address before: 210000, 10, Dajiang Road, Yuhua Economic and Technological Development Zone, Nanjing, Jiangsu

Applicant before: Nanjing Guorui Jiayuan Microelectronics Co.,Ltd.

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Free format text: CORRECT: APPLICANT; FROM: NANJING GUORUI JIAYUAN MICROELECTRONICS CO., LTD. TO: NANJING MEICHEN MICROELECTRONIC CO., LTD.

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Application publication date: 20120418