CN102420260A - Back scattering surface of thin-film silicon solar cell and preparation method of back scattering surface - Google Patents
Back scattering surface of thin-film silicon solar cell and preparation method of back scattering surface Download PDFInfo
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Abstract
The invention relates to a back scattering surface of a thin-film silicon solar cell and a preparation method of the back scattering surface. In the invention, a thin film which is used as the back scattering surface is a composite film and is compounded by a metal and an Ag film, wherein the metal is in direct contact with a substrate and has a shape which is easy to change at a lower temperature; the thickness of the metal film is in a range of 250-600 nm and the thickness of the Ag film is in a range of 20-50 nm; and the surface of the composite film is of a rough structure shape with a submicron size. The structure is prepared by adopting a physical vapor deposition method; in a high-vacuum environment, the method comprises the following steps of: under the condition of heating the substrate, depositing the metal film on the substrate and then depositing the Ag film to form the composite film; or under the condition of the room temperature, depositing the metal film on the substrate and then depositing the Ag film to form the composite film; and then carrying out vacuum heat treatment on the deposited composite film at a temperature in a range of 150-250 DEG C. According to the invention, the scattering property of the surface of the formed composite film is great, the temperature for changing the shape of the metal film is lower and the heat treatment temperature for reducing surface roughening is reduced; meanwhile, the consumption of the noble metal Ag is reduced and the manufacturing cost is reduced.
Description
Technical field
Technology of the present invention relates to material science, green energy resource, physical optics, in the solar film battery research field application prospect is arranged.
Background technology
In conventional energy resource shortage and cause environmental pollution, cause under the situation that global warming, human ecological environment worsen, the development and use that meet the new forms of energy of the strategy of sustainable development have more and more received the attention of countries in the world.Photovoltaic energy has sufficient spatter property, absolute fail safe, the relative popularity and the not available advantages of other conventional energy resource such as abundance property, long-life and non-maintaining property of resource with it, has become one of most important new forms of energy of 21st century.
Solar-energy photo-voltaic cell is a kind of semiconductor device that light energy is converted to electric energy.The crystal silicon cell use thickness of based single crystal silicon or polysilicon silicon chip is hundreds of microns P type (or n type) silicon substrate; Diffuseing to form the pn knot through phosphorus (or boron) processes; This battery production technology maturation; The battery solar energy converting efficient of scale of mass production reaches 18%, is the leading products in photovoltaic cell market, and the existing market occupation rate is up to 90%.But the production cost of crystal silicon cell own is higher, and component price is high.Compare with crystal silicon solar energy battery; The thickness of thin film silicon solar cell is generally at several microns; With respect to the crystal silicon cell of hundreds of micron thickness, saved raw material greatly, and the manufacture craft of thin film silicon solar cell is simple relatively, cost is comparatively cheap; Be suitable for large-area manufacturing, therefore obtained significant progress in recent years.
Yet silicon is a kind of indirect bandgap material, and its near the corresponding wavelength of band gap (λ=λ g=1.107 μ m) only has low-down absorption coefficient to photon.Especially in the wave-length coverage of 800～1100 nm, the absorption length of photon is reached 10 μ m～3mm, far exceeded the thickness of silicon thin film absorbed layer in common notional film solar battery structure, therefore not high to the absorption coefficient of photon in this spectral region.The thin film silicon solar cell conversion efficiency of current extensive industrialization has only 5%-8%; For about half of crystal silicon solar battery component; Wherein silicon materials are key factors at the absorption coefficient not high of near infrared band; This has limited the range of application of thin film silicon solar cell to a certain extent, has also increased the cost of electricity-generating of photovoltaic system per unit of power.Therefore thin film silicon solar cell is carried out lasting research, utilize new technology and technology to reduce the cost of thin film silicon solar cell, thereby further reduce the unit cost of electricity-generating of thin film silicon solar cell, seem very necessary and urgent.
The raising thin film silicon solar cell mainly comprises the method for incident solar photon capture efficiency: 1. reduce the reflection loss of solar radiation at battery surface; 2. increase the transmission range of incident light in battery obsorbing layer.In second method, it is the important channel that increases incident light transmission range in battery obsorbing layer that the surperficial high efficiency light scattering layer of the back of the body is set.
As the some of back reflection device structure, the micro-structural in the back reflection layer is captured at the light of solar cell and is played important effect in the mechanism.According to scattering properties or other difference of the order of diffraction, micro-structural is with the incident light scattering or be diffracted into the angle of bigger off-vertical incident direction.When during greater than the critical angle of silicon-air interface, making most of energy, increase the transmission range of light in absorbed layer thus greatly at upper surface silicon-air interface place reflected back silicon absorbed layer through the transmission of angle of the light of back reflection layer scattering or diffraction.Simultaneously, back reflection layer also must be born the outwards electrode effect of output of electric current with solar cell, so back reflection layer also should have excellent conducting performance.Ag and Al are two kinds of back reflection layer materials using always; Wherein the conductivity of Ag and visible reflectance all are superior to Al; Especially in the preparation of thin film silicon solar cell, the good interface compatible properties is arranged as electrode, therefore be commonly referred to be best selection with deposition transparency conducting layer and thin film silicon absorbed layer in the above.But because Ag is as noble metal, its price is far above Al, thus in the research of laboratory small size battery the normal Ag that adopts as back reflection layer, and on the commercial rollout battery for reducing cost, then replace Ag with Al usually.
The people such as Heine of Switzerland Paul Scherrer research institute have increased the transmission range of incident photon in the active absorbed layer of thin film silicon solar cell silicon to a great extent through make up the binary raster of Ag at cell backside; The people such as Haase of Germany photovoltaic research institute then utilize metal A g reflection and distributed Blatt reflective to strengthen the reflection of light rear interface in battery respectively, thereby the sunlight of incident is limited to inside battery.
The more simple method of preparation surface light scattering layer is through physics or chemical method, on as the surface of substrate, directly forms the surface texture of definite shape or roughness, and then deposits the upward required metal A g film of formation electrode of solar battery.Maximum substrate of using at present is an Aashi U-shaped glass, and this glass surface has the structure of small cratering, and its range scale is a micron dimension.Preparation high reflecting metal Ag film on such glass surface, and then deposit other functional layer for preparing thin film silicon solar cell, be proved to be the approach of effectively raising thin film silicon solar cell light capture efficiency.Also have directly to deposit high reflecting metal Ag film at stainless steel-based the end, under 600 ℃ of conditions of vacuum environment, heat-treat then, thereby make metal A g film surface roughening, to be applicable to the making of thin film silicon solar cell at glass or.But existing metal A g thin film back scattering surface is on substrate, to deposit the Ag film earlier; Then in high vacuum chamber through the film heat treated obtained; For making the Ag surface form coarse structure; Usually need under nearly 600 ℃ high temperature, heat-treat, therefore be difficult in the vacuum deposition chamber of routine, realizing.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of back scattering surface that is used for thin film silicon solar cell, and this back scattering surface has big diffuse scattering characteristic, and has excellent conducting performance.
Another technical problem to be solved by this invention is to provide a kind of above-mentioned method that is used for the back scattering surface of thin film silicon solar cell for preparing, and this method can reduce greatly carries out the needed heat treatment temperature of surface roughening, and preparation cost is lower.
The present invention solves the problems of the technologies described above the technical scheme of being taked: a kind of back scattering surface of thin film silicon solar cell; This back scattering surface is for being deposited on the film of substrate surface; Wherein, Said film as the back scattering surface is a composite membrane; By as bottom with substrate directly contact deposit the malleable pattern at a lower temperature or heat treatment at a lower temperature after the underlying metal film that forms of the metal of malleable pattern and be composited as the Ag film of superficial layer, and the surface of composite membrane presents the coarse structure pattern of submicron-scale.
The present invention deposits the certain thickness metal film of formation earlier at the bottom of glass or the stainless steel lining, deposit the Ag film that forms suitable thickness then above that again, and through heat treatment, thereby make the composite membrane surface roughening have big diffuse scattering characteristic.The Ag film is thinner relatively owing to metal film in the design of composite membrane is thicker relatively; And the temperature that metal film changes pattern is lower; Therefore can reduce greatly and carry out the needed heat treatment temperature of surface roughening; Reduction has reduced the consumption of precious metals ag simultaneously to the requirement of Equipment for Heating Processing, has reduced the cost of manufacturing solar cells.Achievement of the present invention can be applicable to the backing material of solar power silicon hull cell.
On the basis of such scheme; It is described that to deposit the metal of malleable pattern after the metal of malleable pattern or the heat treatment at a lower temperature at a lower temperature be a kind of in Al, Sn, the Zn film; Described superficial layer is the Ag film, and the back scattering surface of formation is a kind of in Al/Ag composite membrane, Sn/Ag composite membrane, the Zn/Ag composite membrane.
On the basis of such scheme; In the described composite membrane; The thickness range that deposits the metal film that the metal of malleable pattern after the metal of malleable pattern or the heat treatment at a lower temperature forms at a lower temperature is 250 nm～600 nm, and the thickness range of Ag film is 20 nm～50 nm.
Concrete, thickness of metal film can be 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm or 600nm; The thickness range of Ag film can be 20nm, 25nm, 30nm, 35nm, 40nm, 45nm or 50nm.
A kind of method for preparing the back scattering surface of above-mentioned thin film silicon solar cell adopts physical gas-phase deposite method, at pressure<10
-3In the Pa high vacuum environment: under the condition to the substrate heating, first deposit thickness is at the metal film bottom of 250 nm～600 nm on substrate, and deposit thickness constitutes composite membrane at the Ag film superficial layer of 20 nm～50 nm again; Perhaps, at ambient temperature, first deposit thickness is at the metal film bottom of 250 nm～600 nm on substrate, and deposit thickness constitutes composite membrane at the Ag film superficial layer of 20 nm～50 nm again, and the composite membrane to deposition carries out vacuum heat then; Wherein, Described substrate heating and VACUUM HEAT-TREATMENT temperature are 150～250 ℃; The vacuum heat time is 1～2 hour, and described metal film bottom is for deposit the metal level of malleable pattern after the metal level of malleable pattern or the heat treatment at a lower temperature at a lower temperature.
Heating or heat treatment temperature can be 150,160,180,200,220,230 or 250 ℃.
On the basis of such scheme; Described to deposit the metal of malleable pattern after the metal of malleable pattern or the heat treatment at a lower temperature at a lower temperature be a kind of among Al, Sn, the Zn, and the back scattering surface of formation is a kind of in Al/Ag composite membrane, Sn/Ag composite membrane, the Zn/Ag composite membrane.
On the basis of such scheme, described deposition process adopts evaporation technology or two target magnetic control sputtering technology of two boat double sources.
Concrete, the evaporation technology of the two boat double sources of employing is put into an amount of metal and Ag material respectively in two evaporation molybdenum boats, two evaporation molybdenum boats are connected with low pressure evaporation power output end respectively; Or adopt two target magnetic control sputtering technologies, and settle Al (or Sn or Zn) target and Ag target on two sputter target stands respectively, two sputtering targets are respectively by independently power supply power supply control.
The invention has the beneficial effects as follows:
1. the preparation of whole back scattering film utilizes pure physical gas-phase deposite method fully, and underlying metal film and superficial layer Ag film deposit respectively in same vacuum chamber successively, and the preparation method is simple and convenient;
2. be prone to realize large-area preparation, especially be easy on the large area film cell substrate, realize;
3. heated substrate in the process of deposit film, or behind the room temperature deposition film, carry out vacuum heat at once, reduced the pollution source in the film preparation process, be prone to prepare the purity height, the high-quality back scattering film that film quality is good;
4. than single Ag film; Can be at lower underlayer temperature deposit underlying metal film/Ag film, or under lower temperature, underlying metal film/Ag film is heat-treated, therefore greatly reduce requirement to Equipment for Heating Processing; Help to simplify technology, reduce cost;
5. adopt the two boat evaporation technologies of double source, or adopt two target magnetic control sputtering technologies, help regulating the thickness of underlying metal film and Ag film;
6. pass through Al, Sn or Zn, or other metal and compound preparation of Ag of heat treatment malleable pattern at a lower temperature, both simplified preparation process condition, kept good optics and the electrical properties in Ag surface again;
7. for the main back scattering surface of cheap Al, Sn or Zn of having adopted, can reduce the cost of manufacture on back scattering surface to a great extent.
Description of drawings
Fig. 1 is a deposition at room temperature, or without the structural representation of heat treated underlying metal film/Ag composite membrane, its surfacing is smooth.
Fig. 2 is the structural representation of the underlying metal film/Ag composite membrane behind the surface roughening of the present invention.
Fig. 3 is the surface optical microphotograph behind the Ag film that deposits 20 nm on the 400 nm Al films that prepare on 250 ℃ of glass substrate again.
Fig. 4 is for deposit the Ag film of 50 nm, the surface optical microphotograph of heat treatment after 1 hour in 250 ℃ of vacuum then again on the 400 nm Al films that prepare on the room temperature glass substrate.
Fig. 5 is the surface optical microphotograph behind the Ag film that deposits 30 nm on the 400 nm Sn films that prepare on 150 ℃ of glass substrate again.
Fig. 6 is for deposit the Ag film of 40 nm, the surface optical microphotograph of heat treatment after 1 hour in 150 ℃ of vacuum then again on the 600 nm Sn films that prepare on the room temperature glass substrate.
Fig. 7 is the surface optical microphotograph behind the Ag film that deposits 40 nm on the 550 nm Zn films that prepare on 200 ℃ of glass substrate again.
Fig. 8 is for deposit the Ag film of 30 nm, the surface optical microphotograph of heat treatment after 1 hour in 200 ℃ of vacuum then again on the 350 nm Zn films that prepare on the room temperature glass substrate.
Fig. 9 is the specular reflectivity curve of spectrum behind the Ag film that deposits 20nm on the 400 nm Al films that prepare on 250 ℃ of glass substrate again.
Embodiment
Utilize physical vapour deposition (PVD) and vacuum heat-treating method, prepared several solar battery back light scattering substrate surfaces.The underlying metal film and the Ag film of deposition preparation different-thickness in various substrate, or are heat-treated under the different temperature condition, explore suitable deposition and heat-treat condition.
Embodiment 1
Adopt physical gas-phase deposite method (two boat dual-source evaporation technology); In high vacuum environment: glass substrate is being heated under 250 ℃ the condition; First deposit thickness is at the Al of 400 nm film on substrate; Deposit thickness constitutes the Al/Ag composite membrane at the Ag of 20 nm film again, promptly processes the back scattering surface of surface roughening.As shown in Figure 3, can see that film surface demonstrates the structure and morphology of submicron-scale.
Embodiment 2
Adopt physical gas-phase deposite method (two boat dual-source evaporation technology); In high vacuum environment: at ambient temperature; First deposit thickness is at the Al of 400 nm film on glass substrate, and deposit thickness constitutes the Al/Ag composite membrane at the Ag of 50 nm film again; Composite membrane to deposition carries out vacuum heat at 250 ℃ then, processes the back scattering surface of surface roughening.As shown in Figure 4, can see that film surface demonstrates the structure and morphology of submicron-scale.
Embodiment 3
Adopt physical gas-phase deposite method (two boat dual-source evaporation technology); In high vacuum environment: glass substrate is being heated under 150 ℃ the condition; First deposit thickness is at the Sn of 400 nm film on substrate; Deposit thickness constitutes the Sn/Ag composite membrane at the Ag of 30 nm film again, promptly processes the back scattering surface of surface roughening.As shown in Figure 5, can see that film surface demonstrates the structure and morphology of micro-meter scale.
Embodiment 4
Adopt physical gas-phase deposite method (two boat dual-source evaporation technology); In high vacuum environment: at ambient temperature; First deposit thickness is at the Sn of 600 nm film on glass substrate, and deposit thickness constitutes the Sn/Ag composite membrane at the Ag of 40 nm film again; Composite membrane to deposition carries out vacuum heat at 150 ℃ then, processes the back scattering surface of surface roughening.As shown in Figure 6, can see that film surface demonstrates the structure and morphology of submicron-scale.
Embodiment 5
Adopt physical gas-phase deposite method (two boat dual-source evaporation technology); In high vacuum environment: glass substrate is being heated under 200 ℃ the condition; First deposit thickness is at the Zn of 550 nm film on substrate; Deposit thickness constitutes the Zn/Ag composite membrane at the Ag of 40 nm film again, promptly processes the back scattering surface of surface roughening.As shown in Figure 7, can see that film surface demonstrates the structure and morphology of micro-meter scale.
Embodiment 6
Adopt physical gas-phase deposite method (two boat dual-source evaporation technology); In high vacuum environment: at ambient temperature; First deposit thickness is at the Zn of 350 nm film on glass substrate, and deposit thickness constitutes the Zn/Ag composite membrane at the Ag of 30 nm film again; Composite membrane to deposition carries out vacuum heat at 200 ℃ then, processes the back scattering surface of surface roughening.As shown in Figure 8, can see that film surface demonstrates the structure and morphology of submicron-scale.
Embodiment 7
Adopt physical gas-phase deposite method (magnetron sputtering technique); In high vacuum environment: glass substrate is being heated under 250 ℃ the condition; First deposit thickness is at the Al of 250 nm film on substrate; Deposit thickness constitutes the Al/Ag composite membrane at the Ag of 25 nm film again, promptly processes the back scattering surface of surface roughening.
Adopt physical gas-phase deposite method (magnetron sputtering technique); In high vacuum environment: at ambient temperature; First deposit thickness is at the Al of 300 nm film on glass substrate, and deposit thickness constitutes the Al/Ag composite membrane at the Ag of 30 nm film again; Composite membrane to deposition carries out vacuum heat at 250 ℃ then, processes the back scattering surface of surface roughening.
Embodiment 9
Adopt physical gas-phase deposite method (magnetron sputtering technique); In high vacuum environment: glass substrate is being heated under 150 ℃ the condition; First deposit thickness is at the Sn of 250 nm film on substrate; Deposit thickness constitutes the Sn/Ag composite membrane at the Ag of 25 nm film again, promptly processes the back scattering surface of surface roughening.
Adopt physical gas-phase deposite method (magnetron sputtering technique); In high vacuum environment: at ambient temperature; First deposit thickness is at the Sn of 280 nm film on glass substrate, and deposit thickness constitutes the Sn/Ag composite membrane at the Ag of 25 nm film again; Composite membrane to deposition carries out vacuum heat at 150 ℃ then, processes the back scattering surface of surface roughening.
Embodiment 11
Adopt physical gas-phase deposite method (magnetron sputtering technique); In high vacuum environment: glass substrate is being heated under 200 ℃ the condition; First deposit thickness is at the Zn of 320 nm film on substrate; Deposit thickness constitutes the Zn/Ag composite membrane at the Ag of 40 nm film again, promptly processes the back scattering surface of surface roughening.
Embodiment 12
Adopt physical gas-phase deposite method (magnetron sputtering technique); In high vacuum environment: at ambient temperature; First deposit thickness is at the Zn of 300 nm film on glass substrate, and deposit thickness constitutes the Zn/Ag composite membrane at the Ag of 35 nm film again; Composite membrane to deposition carries out vacuum heat at 200 ℃ then, processes the back scattering surface of surface roughening.
Embodiment 13
Adopt physical gas-phase deposite method (two boat dual-source evaporation technology); In high vacuum environment: at ambient temperature; First deposit thickness is at the Al of 400 nm film on the polishing stainless steel substrate, and deposit thickness constitutes the Al/Ag composite membrane at the Ag of 50 nm film again; Composite membrane to deposition carries out vacuum heat at 250 ℃ then, processes the back scattering surface of surface roughening.
Embodiment 14
Adopt physical gas-phase deposite method (magnetron sputtering technique); In high vacuum environment: at ambient temperature; First deposit thickness is at the Zn of 300 nm film on the polishing stainless steel substrate, and deposit thickness constitutes the Zn/Ag composite membrane at the Ag of 35 nm film again; Composite membrane to deposition carries out vacuum heat at 200 ℃ then, processes the back scattering surface of surface roughening.
Can draw such conclusion by Fig. 3 ~ Fig. 8; Promptly adopt back scattering surface preparation method proposed by the invention; Under lower heat treatment temperature, promptly realized having the Ag surface of coarse structure, the incident light irradiation only has fraction by direct reflection (as shown in Figure 9) such when surperficial; Then (surface with this specific character can be applicable to prepare thin film silicon solar cell to remainder to the scattering of non-specular surface direction by rough surface; To improve its solar energy converting efficient), and adopt conventional heat treatment method, then need could on simple Ag film, be achieved more than 600 ℃.
Claims (5)
1. the back scattering of a thin film silicon solar cell is surperficial; This back scattering surface is for being deposited on the film of substrate surface; It is characterized in that: said film as the back scattering surface is a composite membrane; The metal film and the Ag film that are formed by the metal of malleable pattern after metal that deposits the malleable pattern at a lower temperature that directly contacts with substrate or the heat treatment at a lower temperature are composited, and the surface of composite membrane presents the coarse structure pattern of submicron-scale.
2. the back scattering of thin film silicon solar cell according to claim 1 is surperficial; It is characterized in that: described to deposit the metal of malleable pattern after the metal of malleable pattern or the heat treatment at a lower temperature at a lower temperature be a kind of among Al, Sn, the Zn, and the back scattering surface of formation is a kind of in Al/Ag, Sn/Ag, the Zn/Ag composite membrane.
3. the back scattering of thin film silicon solar cell according to claim 1 and 2 is surperficial; It is characterized in that: in the described composite membrane; Depositing the thickness of metal film scope that the metal of malleable pattern after the metal of malleable pattern or the heat treatment at a lower temperature forms at a lower temperature is 250nm～600nm, and the thickness range of Ag film is 20nm～50 nm.
4. a method for preparing according to the back scattering surface of the described thin film silicon solar cell of one of claim 1 to 3 is characterized in that: adopt physical gas-phase deposite method, at pressure<10
-3In the high vacuum environment of Pa:
Under the condition to the substrate heating, deposit thickness is at the metal film of 250nm～600nm on substrate earlier, and deposit thickness constitutes composite membrane at the Ag of 20nm～50nm film again; Perhaps; At ambient temperature; Metal film at the malleable pattern after the metal that deposits the malleable pattern at a lower temperature of 250nm～600nm or heat treatment at a lower temperature of first deposit thickness on the substrate; Deposit thickness constitutes composite membrane at the Ag of 20nm～50nm film again, and the composite membrane to deposition carries out vacuum heat then; Wherein, Described substrate heating and VACUUM HEAT-TREATMENT temperature are 150～250 ℃; The vacuum heat time is 1～2 hour, and the metal of malleable pattern forms described metal film after the metal of malleable pattern or the heat treatment at a lower temperature in order to deposit at a lower temperature.
5. the method on the back scattering surface of preparation thin film silicon solar cell according to claim 4, it is characterized in that: described deposition process adopts evaporation technology or two target magnetic control sputtering technology of two boat double sources.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943696A (en) * | 2013-01-23 | 2014-07-23 | 深圳市创益科技发展有限公司 | Film solar energy battery and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5282902A (en) * | 1991-05-09 | 1994-02-01 | Canon Kabushiki Kaisha | Solar cell provided with a light reflection layer |
| JPH08153882A (en) * | 1994-11-30 | 1996-06-11 | Fuji Electric Co Ltd | Production of thin film solar cell |
| CN101373799A (en) * | 2008-08-07 | 2009-02-25 | 西南技术物理研究所 | Double-layer doping-layer silicon-based film solar cell |
| TW201138125A (en) * | 2009-12-21 | 2011-11-01 | Ppg Ind Ohio Inc | Silicon thin film solar cell having improved haze and methods of making the same |
-
2011
- 2011-11-03 CN CN2011103422637A patent/CN102420260A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5282902A (en) * | 1991-05-09 | 1994-02-01 | Canon Kabushiki Kaisha | Solar cell provided with a light reflection layer |
| JPH08153882A (en) * | 1994-11-30 | 1996-06-11 | Fuji Electric Co Ltd | Production of thin film solar cell |
| CN101373799A (en) * | 2008-08-07 | 2009-02-25 | 西南技术物理研究所 | Double-layer doping-layer silicon-based film solar cell |
| TW201138125A (en) * | 2009-12-21 | 2011-11-01 | Ppg Ind Ohio Inc | Silicon thin film solar cell having improved haze and methods of making the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943696A (en) * | 2013-01-23 | 2014-07-23 | 深圳市创益科技发展有限公司 | Film solar energy battery and manufacturing method thereof |
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Application publication date: 20120418 |