CN102418084A - Source-gas-isolated solid-state-source atomic layer deposition device and method - Google Patents
Source-gas-isolated solid-state-source atomic layer deposition device and method Download PDFInfo
- Publication number
- CN102418084A CN102418084A CN2011104186218A CN201110418621A CN102418084A CN 102418084 A CN102418084 A CN 102418084A CN 2011104186218 A CN2011104186218 A CN 2011104186218A CN 201110418621 A CN201110418621 A CN 201110418621A CN 102418084 A CN102418084 A CN 102418084A
- Authority
- CN
- China
- Prior art keywords
- source material
- precursor
- precursor source
- container
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides a source-gas-isolated solid-state-source atomic layer deposition device and method. A precursor source material providing system comprises multiple parallel precursor source material branches; each precursor source material branch comprises a pipeline and a precursor source material container; the precursor source material container is divided into upper and lower two parts; the lower part is a solid-state source container for storing a solid-state precursor source material; the upper part is a gas-state source container for storing a gas-state precursor; a valve for controlling the communication and separation of the upper part and the lower part is arranged between the upper part and the lower part; pulse actuators are arranged at two ends of the gas-state source container; a heating device is arranged on the solid-state source container; a valve is arranged on each precursor source material branch; the precursor source material branches are converged into a precursor source material header at one end and are connected to a reaction chamber system together with a purge gas delivery system; the reaction chamber system is connected to a vacuum pump through a vacuum control valve; and the other ends of the precursor source material branches are connected to a carrier gas system.
Description
Technical field
The present invention relates to Solid State Source apparatus for atomic layer deposition and method that a provenance air bound leaves, belong to deposition apparatus and method field.
Background technology
In traditional ALD technology, the precursor source can be solid or liquid state, and it is sent in the reaction chamber with a slice or multi-disc substrate, and precursor source material is forming plated film at substrate surface in reaction chamber.
When using solid-state precursor source material, Solid State Source taste be closed in one can high voltage bearing steel cylinder in, and it is heated to the condition of high temperature and makes the Solid State Source gasification, and use carrier gas to take the precursor source of gasification out of steel cylinder.Carrier gas is taken the precursor source of gasification out of from steel cylinder, but also maybe the solid-state precursor source strip that not gasify be gone into pipeline simultaneously, thereby causes the obstruction and the damage of valve or miscellaneous part.Present solid-state precursor generally uses massive material, and is provided with filtration unit in Solid State Source steel cylinder air outlet and prevents that carrier gas from taking away powder particle, has also limited the unobstructed and stable of air-flow but load filtration unit.
Summary of the invention
The technical problem that the present invention will solve is to overcome existing defective; The Solid State Source apparatus for atomic layer deposition and the method that provide a provenance air bound to leave; Make when using solid-state precursor source material; The solid-state precursor source strip of avoiding not gasifying is gone into pipeline, thereby causes the obstruction and the damage of valve or miscellaneous part.
In order to solve the problems of the technologies described above, the invention provides following technical scheme:
The Solid State Source apparatus for atomic layer deposition that one provenance air bound leaves, the precursor source material provides system, comprises the precursor source material branch road of a plurality of parallel connections; Precursor source material branch road comprises pipeline and precursor source material container, and the precursor source material container is divided into two portions up and down, and the bottom is a Solid State Source container of depositing solid precursor source material; Top is the gaseous source container of gaseous state precursor storage; Be provided with the valve of both UNICOMs of control and disconnection wherein, gaseous source container two ends are provided with the pulse performer, and the Solid State Source container is provided with heating unit; Each precursor source material branch road is provided with valve; At one end accumulate the total Lu Houyu sweep gas of precursor source material delivery system and be connected to the reaction cavity system, the reaction cavity system is connected to vacuum pump through vacuum control valve, and the precursor source material branch road the other end is connected to carrier gas system.
Further, be provided with valve between precursor source material branch road and the carrier gas system.
Further, Solid State Source internal tank surface mirror mirror polish and be coated with protective layer.
The Solid State Source Atomic layer deposition method that one provenance air bound leaves; Utilize vacuum pump that the reaction cavity system is placed vacuum state; Deposit after through carrier gas system the precursor source material being delivered to the reaction cavity system; The precursor source material container comprises Solid State Source container and gaseous state source container, through heating make the precursor source material by solid-state sublime up into gaseous state after, deposit after being delivered to the reaction cavity system by carrier gas.
Description of drawings
Accompanying drawing is used to provide further understanding of the present invention, and constitutes the part of specification sheets, is used to explain the present invention with embodiments of the invention, is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the precursor source material branch road structural representation of the Solid State Source apparatus for atomic layer deposition that leaves of the present invention's one provenance air bound;
Fig. 2 is the structural representation of the Solid State Source apparatus for atomic layer deposition that leaves of the present invention's one provenance air bound.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described, should be appreciated that preferred embodiment described herein only is used for explanation and explains the present invention, and be not used in qualification the present invention.
Solid State Source apparatus for atomic layer deposition as shown in Figure 1, that a provenance air bound leaves, the precursor source material provides system; Comprise the precursor source material branch road of a plurality of parallel connections, precursor source material branch road comprises pipeline and precursor source material container, and the precursor source material container is divided into two portions up and down; The bottom is a Solid State Source container of depositing solid precursor source material, and top is the gaseous source container of gaseous state precursor storage, is provided with the valve of both UNICOMs of control and disconnection between wherein; Gaseous source container two ends are provided with the pulse performer; The Solid State Source container is provided with heating unit, and each precursor source material branch road is provided with valve, at one end accumulates the total Lu Houyu sweep gas of precursor source material delivery system and is connected to the reaction cavity system; The reaction cavity system is connected to vacuum pump through vacuum control valve, and the precursor source material branch road the other end is connected to carrier gas system.
Further, be provided with valve between precursor source material branch road and the carrier gas system.
Further, Solid State Source internal tank surface mirror mirror polish and be coated with protective layer.
The Solid State Source Atomic layer deposition method that one provenance air bound leaves; Utilize vacuum pump that the reaction cavity system is placed vacuum state; Deposit after through carrier gas system the precursor source material being delivered to the reaction cavity system; The precursor source material container comprises Solid State Source container and gaseous state source container, through heating make the precursor source material by solid-state sublime up into gaseous state after, deposit after being delivered to the reaction cavity system by carrier gas.
Embodiment one
Valve-off 3.Thereby use well heater 7 to make Solid State Source container 1 interior solid source be heated to sublimation temperature and become precursor gas; The temperature of cavity 1, equipment pipeline and miscellaneous part is set, identical with established temperature and get into next step when reaching stable (fluctuation range is less than or equal to 1 ℃) when displays temperature;
The burst length that valve 3 and 4 are set all is 10ms, and flush time is set to 10s and 15s respectively; Cycle index is set to 100; The flow set of sweep gas is 20sccm;
The beginning cyclic deposition, deposition can form the plated film that thickness is about 10 nanometers at particle surface after finishing.
What should explain at last is: the above is merely the preferred embodiments of the present invention; Be not limited to the present invention; Although the present invention has been carried out detailed explanation with reference to previous embodiment; For a person skilled in the art, it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. the Solid State Source apparatus for atomic layer deposition that leaves of a provenance air bound; It is characterized in that: the precursor source material provides system, comprises the precursor source material branch road of a plurality of parallel connections, and precursor source material branch road comprises pipeline and precursor source material container; The precursor source material container is divided into two portions up and down; The bottom is a Solid State Source container of depositing solid precursor source material, and top is the gaseous source container of gaseous state precursor storage, is provided with the valve of both UNICOMs of control and disconnection between wherein; Gaseous source container two ends are provided with the pulse performer; The Solid State Source container is provided with heating unit, and each precursor source material branch road is provided with the pulse performer, at one end accumulates the total Lu Houyu sweep gas of precursor source material delivery system and is connected to the reaction cavity system; The reaction cavity system is connected to vacuum pump through vacuum control valve, and the precursor source material branch road the other end is connected to carrier gas system.
2. the Solid State Source apparatus for atomic layer deposition that leaves according to the said provenance air bound of claim 1 is characterized in that: be provided with the pulse performer between precursor source material branch road and the carrier gas system.
3. the Solid State Source apparatus for atomic layer deposition that leaves according to the said provenance air bound of claim 1 is characterized in that: Solid State Source internal tank surface mirror mirror polish also is coated with protective layer.
4. the Solid State Source Atomic layer deposition method that leaves of a provenance air bound; It is characterized in that: utilize vacuum pump that the reaction cavity system is placed vacuum state; Deposit after through carrier gas system the precursor source material being delivered to the reaction cavity system; The precursor source material container comprises Solid State Source container and gaseous state source container, through heating make the precursor source material by solid-state sublime up into gaseous state after, deposit after being delivered to the reaction cavity system by carrier gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104186218A CN102418084A (en) | 2011-12-14 | 2011-12-14 | Source-gas-isolated solid-state-source atomic layer deposition device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104186218A CN102418084A (en) | 2011-12-14 | 2011-12-14 | Source-gas-isolated solid-state-source atomic layer deposition device and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102418084A true CN102418084A (en) | 2012-04-18 |
Family
ID=45942725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011104186218A Pending CN102418084A (en) | 2011-12-14 | 2011-12-14 | Source-gas-isolated solid-state-source atomic layer deposition device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102418084A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103993295A (en) * | 2014-05-15 | 2014-08-20 | 无锡迈纳德微纳技术有限公司 | Micro accurate coating system |
| CN106676498A (en) * | 2017-03-27 | 2017-05-17 | 中国科学技术大学 | Chemical vapor deposition system |
| CN106861557A (en) * | 2017-04-24 | 2017-06-20 | 中国科学技术大学 | A kind of volatilization device for CVD Solid Sources |
| CN107026066A (en) * | 2015-06-23 | 2017-08-08 | 上海凯世通半导体股份有限公司 | Feeding device, ion source device and method of feeding |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101500989A (en) * | 2006-06-28 | 2009-08-05 | 哈佛学院院长等 | Metal(IV) tetra-amidinate compounds and their use in vapor deposition |
| CN101663734A (en) * | 2007-04-17 | 2010-03-03 | 朗姆研究公司 | Apparatus and method for atomic layer deposition |
| CN102041478A (en) * | 2009-10-15 | 2011-05-04 | 小岛冲压工业株式会社 | Method of forming organic polymer thin film and an appartus for forming the organic polymer thin film |
| CN102127756A (en) * | 2011-02-21 | 2011-07-20 | 东华大学 | Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma |
-
2011
- 2011-12-14 CN CN2011104186218A patent/CN102418084A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101500989A (en) * | 2006-06-28 | 2009-08-05 | 哈佛学院院长等 | Metal(IV) tetra-amidinate compounds and their use in vapor deposition |
| CN101663734A (en) * | 2007-04-17 | 2010-03-03 | 朗姆研究公司 | Apparatus and method for atomic layer deposition |
| CN102041478A (en) * | 2009-10-15 | 2011-05-04 | 小岛冲压工业株式会社 | Method of forming organic polymer thin film and an appartus for forming the organic polymer thin film |
| CN102127756A (en) * | 2011-02-21 | 2011-07-20 | 东华大学 | Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103993295A (en) * | 2014-05-15 | 2014-08-20 | 无锡迈纳德微纳技术有限公司 | Micro accurate coating system |
| CN107026066A (en) * | 2015-06-23 | 2017-08-08 | 上海凯世通半导体股份有限公司 | Feeding device, ion source device and method of feeding |
| CN107026066B (en) * | 2015-06-23 | 2018-10-23 | 上海凯世通半导体股份有限公司 | Feeding device, ion source device and method of feeding |
| CN106676498A (en) * | 2017-03-27 | 2017-05-17 | 中国科学技术大学 | Chemical vapor deposition system |
| CN106676498B (en) * | 2017-03-27 | 2020-01-03 | 中国科学技术大学 | Chemical vapor deposition system |
| CN106861557A (en) * | 2017-04-24 | 2017-06-20 | 中国科学技术大学 | A kind of volatilization device for CVD Solid Sources |
| CN106861557B (en) * | 2017-04-24 | 2023-03-10 | 中国科学技术大学 | Volatilization device for CVD solid source |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102418084A (en) | Source-gas-isolated solid-state-source atomic layer deposition device and method | |
| KR101876465B1 (en) | Apparatus and methods for deposition reactors | |
| US10981097B2 (en) | High-temperature dust removal and filtering apparatus, high-temperature dust removal and filtering system, and continuous dust removal and filtering method | |
| TW468020B (en) | Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels | |
| KR101084234B1 (en) | Deposition source, Deposition apparatus using the same and method for forming thin film | |
| CN102418085B (en) | Micronano-scale powder protective layer wrapping device and method | |
| JP2008535752A5 (en) | ||
| TW200706686A (en) | Vaporizer and method of vaporizing a liquid for thin film delivery | |
| CN104073780A (en) | Film forming apparatus, gas supply device and film forming method | |
| CN103167903B (en) | The method for cleaning of filter and the washing of handled object or drying means | |
| US7799377B2 (en) | Organic/inorganic thin film deposition method | |
| CN109320275B (en) | Preparation method of antioxidant SiC fiber reinforced ceramic matrix composite | |
| CN104334287A (en) | Apparatuses, systems and methods for applying protective coatings to electronic device assemblies | |
| WO2012166528A3 (en) | Refillable ampoule with purge capability | |
| TW201343955A (en) | Method and apparatus for precursor delivery | |
| CN102206814A (en) | Semiconductor film growth control device and semiconductor film growth control method | |
| CN203061881U (en) | Novel vacuum furnace and dewaxing sintering unit | |
| CN204385289U (en) | A kind of atomic layer deposition apparatus | |
| CN103388177B (en) | A kind of Semiconductor Film Growth device and growth method thereof | |
| KR101457290B1 (en) | Ald system with dual purging line | |
| US20170253970A1 (en) | ALD Coating System and Method for Operating an ALD Coating System | |
| CN202116646U (en) | Multi-channel independent gas-supply plasma enhanced chemical vapor deposition (PECVD) gas supply deposition system | |
| CN116121730B (en) | Solid precursor source sublimation device | |
| CN205313663U (en) | Metal organic chemical vapor deposition equipment | |
| CN102634759A (en) | Poly-p-xylene deposition system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120418 |