Summary of the invention
The object of the present invention is to provide a kind of Wavelength tunable laser based on phase place coupled reflection grating feedback, can be constantly or change output wavelength selectively, and can cover very wide wave-length coverage.
The object of the invention is realized through following technical scheme: a kind of Wavelength tunable laser based on phase place coupled reflection grating feedback; Comprise the active gain chip that is used to produce broadband spontaneous radiation photon; The passive photon chip that is used for exocoel feedback and generation tunable wavelength; Respectively have fiber waveguide in active gain chip and the passive photon chip, two chips are through the waveguide core butt coupling; Waveguide on the passive photon chip comprises a laser phase control section and composite waveguide mirror portion, and phase control division is arranged with the corresponding electrode that is used to change waveguide index; The composite waveguide mirror portion comprises the first speculum section, phase place coupling section and the second speculum section successively, and each section is equipped with the corresponding electrode that is used to change waveguide index;
Through selecting the waveguide index of change first a speculum section or the second speculum section, the wavelength location that the reflection peak of two speculum sections distributes changes thereupon; Optionally make the corresponding reflection peak of two speculum sections overlapping in a certain wavelength; Change the waveguide index of phase place coupling section again; Make the corresponding reflection peak of two speculum sections obtain the long maximum reflection of coherent phase in this superimposed wave strong point; The step of going forward side by side joint laser phase control section satisfies the phase condition in the lasing position of this wavelength, is implemented in the laser output of this wavelength.
All the other reflection peaks through repeating the first speculum section and the second speculum section overlapping, and corresponding control phase coupling section and laser phase part, thus the stride formula of realization laser output wavelength is tuning.
Be on the overlapping basis at above-mentioned a certain wavelength; Again two speculum sections of synchronous change and phase place the coupling section waveguide index; Make the same moved further of wavelength location of two reflection peaks of above-mentioned overlapping; Produce the continuous variation of crest overlapping wavelength, thereby the continous way that realizes output optical maser wavelength is tuning.
First speculum according to the invention is selected a sampled-grating or a superstructure grating for use; Said second speculum is combined by the waveguide bragg grating that at least two centre wavelengths have nothing in common with each other, and the electrode pair of the second speculum section should be divided in the waveguide of each waveguide bragg grating.
First speculum according to the invention is combined by the waveguide bragg grating that at least two centre wavelengths have nothing in common with each other, and the electrode pair of the first speculum section should be divided in the waveguide of each waveguide bragg grating; Said second speculum is selected a sampled-grating or a superstructure grating for use.
First speculum according to the invention and second speculum are all selected sampled-grating or superstructure grating for use; First speculum has different pectination reflection peaks with second speculum and distributes.
First speculum according to the invention is combined by the waveguide bragg grating that at least two centre wavelengths have nothing in common with each other, and the electrode pair of the first speculum section should be divided in the waveguide of each waveguide bragg grating; Said second speculum is also combined by the waveguide bragg grating that at least two centre wavelengths have nothing in common with each other, and the electrode pair of the second speculum section should be divided in the waveguide of each waveguide bragg grating; First speculum has different reflection peaks with second speculum and distributes.
Phase control part according to the invention is between chip gain and composite waveguide mirror portion.
The coupling end face of chip gain according to the invention and passive photon chip is coated with anti-reflective film, and the other end of chip gain is coated with highly reflecting films.
The waveguide phase control part on the passive photon chip of the present invention and the electrode of composite waveguide mirror portion are located at the surface of the top covering of waveguide core; Perhaps be located at the waveguide cladding surface of waveguide core both sides.
Reflection peak quantity Matching during the pectination of the quantity of waveguide bragg grating according to the invention and sampled-grating (SG) or superstructure grating (SSG) distributes; The pectination reflection peak that reflection peak Wavelength distribution that each waveguide bragg grating is formed and reflected intensity all approach sampled-grating (SG) or superstructure grating (SSG).
Compared with prior art, this invention technology has the following advantages:
1) laser of the present invention can carry out wavelength and selects through operating on the passive photon chip two spectral responses between the reflecting grating, has realized the substep or the continuous tuning of laser output wavelength in a big way;
2) because tuned optical through heat on chip or electrical effect realization, does not need the mechanical outflow of population, therefore there is not moving meter;
3) the present invention has guaranteed that the live width of this laser is narrower than traditional tunable DFB or DBR laser greatly owing to adopted outer-cavity structure and long resonant cavity, and narrow linewidth is a kind of key index of 40G/100 coherent communication of future generation;
4) the present invention is because the chip outer-cavity structure, avoided the traditional low-light components and parts and the assembling process of complex process, guaranteed that this laser can adopt semiconductor microelectronics technology to carry out large-scale production, has tangible performance and price advantage.
Embodiment
As shown in Figure 1, the plan structure principle schematic of the specific embodiment of the invention one, it comprises an active gain chip 4, is used to produce broadband spontaneous radiation photon, as excitation source; A passive photon chip 5 provides the tunable wave length feedback as exocoel, produces the laser output of tunable wavelength.Respectively has a waveguide heart 3,12 on the fiber waveguide of active gain chip and passive photon chip; The butt joint of active gain chip 4 and passive photon chip 5 is to reach Best Coupling and realize through the waveguide heart on each chip 3,12 being carried out accurate optical alignment.The left and right end face of chip gain 4 is coated with highly reflecting films 2 and anti-reflective film 1, and two end faces 15,16 of passive photon chip 5 fiber waveguides are coated with anti-anti-film, and laser will leave feedback external cavity from the right side 16 of passive photon chip.Under the situation that plated film changes, also can send laser, but the reflectivity of waveguide reflector needs to strengthen from the active gain chip left side.
Active gain chip 4 can be processed by III commonly used-V compound semiconductor materials InP series.The all or part of metal electrode 31 that is used for injecting electronics that is coated with on the active gain chip waveguide core to active area; Near a certain centre wavelength, produce broadband spontaneous radiation photon through electronics-photon conversion, arrive passive photon chip 5 as feedback external cavity through the waveguide heart 3,12 coupled transfer.
Waveguide 12 on the passive photon chip comprises a laser phase control section 10 and a composite waveguide mirror portion, and they constitute the exocoel of tunable laser of the present invention.Laser phase control section 10 is between chip gain and composite waveguide mirror portion.The composite waveguide speculum is by the first speculum section 11, and phase place coupled zone 13, the second speculum sections 14 constitute; Phase place coupling unit 13 is between first speculum 11 and second speculum 14.
All have local corresponding metal electrode in the waveguide of each part on the passive photon chip 5; Metal electrode is used to change the refractive index of its corresponding cover part waveguide, can change temperature through metal electrode heating, produces heat-luminous effect and changes waveguide index; Also can produce electro-optic effect and change waveguide index through the change of electric current on the metal electrode.Metal electrode in the passive photon chip 5 in the each several part waveguide is symmetrically set in the waveguide cladding surface (like Fig. 9) of these partial waveguide core both sides; In the present embodiment; The waveguide core bilateral symmetry of phase control part 10 be provided with metal electrode 6,6 '; The waveguide core bilateral symmetry of the first speculum section 11 be provided with metal electrode 7,7 '; The waveguide core bilateral symmetry of phase place coupled zone 13 be provided with metal electrode 8,8 ', the metal electrode on the second speculum section 14 will come correspondence to set up separately according to the combination of second speculum.In addition, each metal electrode placement location also can only be located at the surface (like Figure 10) of the top covering of waveguide core.
Laser phase control section 10 on the passive photon chip 5 or phase place coupling unit 13 are the length through the optical path of regulating photon, and promptly the product of the refractive index of waveguide light and physical length provides one to produce the required phase condition of laser.Therefore, can through corresponding covered metal electrodes 6,6 ', 8,8 ' heating changes the waveguide index that temperature changes phase control part 10 or phase place coupling unit 13, satisfies phase condition.Above-mentioned in addition waveguide index also can utilize electro-optic effect to change through corresponding covered metal electrodes.Above-mentioned laser phase control section 10 is to be used to provide to produce the required phase condition of laser, and it also can be located in the waveguide in the active gain chip 4, also is the effect that can reach same.
Above-mentioned first speculum 11 adopts sampled-grating (SG) or superstructure grating (SSG).The characteristics of sampled-grating/superstructure grating reflection spectrum are in the broad wave-length coverage, to have the reflection peak of a pectination to distribute, and the peak-to-peak wavelength interval of adjacent reflection is known as Free Spectral Range (FSR).When the localized metallic electrode of correspondence covering changed the light refractive index of waveguide through heat-light or electro-optic effect, sampled-grating/superstructure grating reflection wavelength will be by tuning, and promptly whole pectination reflectance spectrum will move with respect to wavelength.Sampled-grating/superstructure grating has suitable reflection peak intensity and comes to form best feedback and suitable Free Spectral Range to laser are provided so that it can be accomplished in wavelength tuning.
The waveguide bragg grating that above-mentioned second speculum 14 adopts several reflection wavelengths to have nothing in common with each other combines, and at least two of the quantity of waveguide bragg grating specifically can be set according to tuning needs.A common waveguide bragg grating produces a reflection peak or two reflection peaks; For the benefit of better tuning; Reflection peak quantity Matching during the quantity of waveguide bragg grating can distribute with the pectination of sampled-grating (SG) or superstructure grating (SSG); Both quantitative matching relationships can be the reflection peaks during the corresponding pectination of a waveguide bragg grating distributes, and the reflection peak in distributing if any five pectinations just needs five waveguide bragg gratings that reflection wavelength has nothing in common with each other; For the bigger waveguide bragg grating of reflection peak tuning range; Quantitative proportion that also can be different; Can cover two reflection peaks in the pectination distribution like a waveguide bragg grating reflection peak tuning range; Reflection peak if any in eight pectinations distributions just needs four waveguide bragg gratings that reflection wavelength has nothing in common with each other; Vice versa.In addition, the wavelength of corresponding reflection peak during the reflection peak wavelength of each waveguide bragg grating pectination reflection peak that approaches sampled-grating (SG) or superstructure grating (SSG) respectively distributes.
The wavelength of Bragg grating shape reflection peak is determined by following total relation:
Wherein
Be the wavelength of Bragg grating reflection peak, n
EffBe the effective refractive index of single mode waveguide,
Be the cycle of Bragg reflection grating, visible by equation (1), when waveguide index is changed; Bragg grating reflection peak wavelength just can be by tuning; Therefore, can change waveguide index, make its reflection peak wavelength obtain tuning through corresponding covered metal electrodes.Present embodiment
second speculum 14 adopts the waveguide bragg grating 141,142,143,144,145 with the centre wavelength that has nothing in common with each other to combine, each symmetry of waveguide core both sides of each Bragg grating set up separately metal electrode 91,91 ', 92,92 ', 93,93 ', 94,94 ', 95,95 '.
The waveguide material of passive photon chip 5 should be selected the material that on refractive index, has big heat-light or electricity-spectrum number for use, such as silicon or polymeric material or the like, like this, can carry out effectively tuning to the refractive index ground of single mode waveguide.Such as, the silicon waveguide on the silicon on insulated substrate (SOI) is exactly to realize tuning fine selection.Each reflecting grating can be etched in SOI waveguide (like Figure 11) in the heart in the passive photon chip, covers covering then.This waveguide itself has very simple structure, is easy to utilize existing ripe semiconductor microelectronics silicon technology to produce.Because the refractive index contrast of silicon on insulated substrate waveguide is very high; Approaching with the waveguide in the chip gain; Therefore, at the joint of two chips, the waveguide optical mould that also can be through making it and the waveguide optical mould of chip gain coupling as far as possible obtain optimum optical coupled.
Shown in 2; Each waveguide bragg grating has different reflection peaks 20,22,24,26,28 wavelength, and the wavelength of the pectination reflection peak 21,23,25,27,29 of all approaching respectively corresponding sampled-grating of each waveguide bragg grating reflection wavelength/superstructure grating.Simultaneously, the pectination reflection peak intensity of the reflection peak intensity of these waveguide bragg gratings and corresponding sampled-grating/superstructure grating is also approaching.
The wavelength of exporting as required; Reflection peak of waveguide bragg grating 26 as selected carries out tuning; With overlapping (as shown in Figure 3) of corresponding reflection peak 27 on wavelength in the pectination reflection that realizes reflection peak 26 and sampled-grating/superstructure grating; Guarantee that through control phase coupled zone 13 the waveguide bragg grating reflection peak 26 and the coherent phase length of the pectination reflection peak 27 of corresponding sampled-grating/superstructure grating are superimposed again; Guaranteed that photon has maximum gain at this tuning wavelength, provide the strongest feedback to produce laser for chip gain 4 in this superimposed wave strong point to guarantee the composite waveguide speculum.And the reflection 20,22,24,28 of other waveguide bragg grating can not produce laser because insufficient strength can be suppressed in other reflection peak 21,23,25,29 in the pectination reflectance spectrum of the sampled-grating of first speculum 11/superstructure grating and second speculum in the laser process competition.
Then regulate laser phase controlled area 10, come and go phase condition in the relevant chamber for the wavelength tuning generation of Laser provides, produce laser at this overlapping wavelength, laser will be from the right side output of passive photon chip.All the other corresponding reflection peaks in different wave length place through repeating the first speculum section and the second speculum section overlapping is as 20 and 21; 22 and 23; 24 and 25; 28 and 29; And corresponding control phase coupling section and laser phase part, can realize that the stride formula of laser output wavelength is tuning.
On the overlapping basis of the pectination reflection peak of above-mentioned waveguide bragg grating reflection peak 26 and corresponding sampled-grating/superstructure grating 27; Again two speculum sections of synchronous change and phase place the coupling section waveguide index; Make the same moved further of wavelength location of two reflection peaks of above-mentioned overlapping; Produce the continuous tuning of crest overlapping wavelength; Come and go phase condition generation laser by phase control district 10 in the relevant chamber for the wavelength tuning generation of Laser provides, thereby the continous way that realizes output optical maser wavelength is tuning.
In concrete the use; Can be according to the needs that produce wavelength; Choose the reflection peak in close waveguide bragg grating reflection peak of a pair of wavelength and sampled-grating/superstructure grating pectination spectrum earlier and realize that wavelength is overlapping; Then, they towards long wavelength's direction synchronously, tuning continuously, up to a Free Spectral Range accomplishing sampled-grating or superstructure grating.Then, the waveguide bragg grating of the following a pair of vicinity of choosing and the pectination reflection peak of sampled-grating/superstructure grating are selected and repeat tuning process in a similar manner, thereby cover wave-length coverage widely.
As shown in Figure 4; The structure principle chart of embodiment of the present invention two; This execution mode structure and embodiment one are basic identical; Difference is that first speculum 11 is combined by waveguide bragg grating 111,112,113,114,115, the electrode 71,71 of the first speculum section ', 72,72 ', 73,73 ', 74,74 ', 75,75 ' symmetry is divided into the waveguide core both sides of each waveguide bragg grating; Second speculum 14 is a sampled-grating or a superstructure grating; The waveguide core bilateral symmetry of the second speculum section 14 be provided with metal electrode 9,9 '.This execution mode laser generation mechanism is identical with embodiment one with Tuning mechanism.
As shown in Figure 5; The structure principle chart of embodiment of the present invention three, this execution mode structure and embodiment one are basic identical, and difference is; Second speculum 14 also is a sampled-grating or superstructure grating, the waveguide core bilateral symmetry of the second speculum section 14 be provided with metal electrode 9,9 '.As shown in Figure 6, the sampled-grating of second speculum and first speculum or the Free Spectral Range of superstructure grating is inequality can be close; Their corresponding pectination reflection peak 40,41; 42,43; 44,45; 46,47; 48,49 have close reflected intensity.
It is tuning that present embodiment chooses the close reflection peak of a pair of wavelength 44,45 to carry out from the pectination reflectance spectrum of two speculums.At first, through finely tuning one of them speculum, the reflection wavelength overlapping (like Fig. 7) of a pair of pectination reflection peak of realizing choosing 44,45.Then, phase place coupling unit 13 is regulated so that make the reflection coherent phase of overlapping pectination reflection peak long, photon produces maximum feedback and minimum loss at this wavelength, and can not produce laser from the feedback of other pectination reflection peak owing to undercapacity.Follow the wavelength through two overlapping pectination reflection peaks of simultaneous tuning, and accompany by respective phase coupling and phase control adjusting, also can realize the substep or the continuous tuning of the optical maser wavelength of laser, whole tuning process is identical with embodiment one.
As shown in Figure 8; The structure principle chart of embodiment of the present invention four; This execution mode structure and embodiment one are basic identical; Difference is that difference is that first speculum 11 is combined by the waveguide bragg grating 111,112,113 that reflection wavelength has nothing in common with each other, the electrode 71,71 of the first speculum section ', 72,72 ', 73,73 ' symmetry is divided into the waveguide core both sides of each waveguide bragg grating; Second speculum 14 is combined by the waveguide bragg grating 141,142,143 that reflection wavelength has nothing in common with each other, the electrode 91,91 of the second speculum section ', 92,92 ', 93,93 ' symmetry is divided into the waveguide core both sides of each waveguide bragg grating.As shown in Figure 9, reflection peak 61,63,65,67,69 Wavelength distribution of first each Bragg grating of speculum section are different with reflection peak 60,62,64,66,68 Wavelength distribution of second each Bragg grating of speculum section, can be close; Each corresponding reflection peak 60,61; 62,63; 64,65; 66,67; 68, the intensity between 69 is close.
It is tuning that present embodiment chooses the close reflection peak of a pair of wavelength 62,63 to carry out from the reflectance spectrum of two speculums.At first, through finely tuning one of them speculum, the reflection wavelength overlapping (like Figure 10) of a pair of reflection peak of realizing choosing 62,63.Then, phase place coupling unit 13 is regulated so that make the reflection coherent phase of overlapping reflection peak long, photon produces maximum feedback and minimum loss at this wavelength, and can not produce laser from the feedback of other reflection peak owing to undercapacity.Follow the wavelength through two overlapping reflection peaks of simultaneous tuning, and accompany by respective phase coupling and phase control adjusting, also can realize the substep or the continuous tuning of the optical maser wavelength of laser, whole tuning process is identical with embodiment one.
Execution mode of the present invention is not limited thereto; According to foregoing; Ordinary skill knowledge and customary means according to this area; Do not breaking away under the above-mentioned basic fundamental thought of the present invention prerequisite, the present invention can also make equivalent modifications, replacement or the change of other various ways, all can realize the object of the invention.