JP5553248B2 - Optical device and manufacturing method thereof - Google Patents

Description

  The present invention relates to an optical device.

  In the era of broadband, introduction of a WDM (Wavelength Division Multiplexing) transmission system capable of communication of a plurality of optical wavelengths is progressing toward efficient utilization of optical fibers. Recently, the use of DWDM devices (high-density wavelength division multiplexing devices) that enable multiplexing of several tens of optical wavelengths and higher speed transmission is also expanding. Each WDM transmission system requires a light source corresponding to each optical wavelength, and the required number increases dramatically with the increase in multiplexing. More recently, studies aiming at commercialization of ROADM (Reconfigurable Optical Add / Drop Multiplexers) that add / drop arbitrary wavelengths at each node are in progress. If this system is introduced, the optical capacity can be switched by changing the wavelength in addition to the expansion of the transmission capacity by wavelength multiplexing, and the degree of freedom of the optical network is dramatically increased.

  As a light source for a WDM transmission system, a distributed feedback semiconductor laser (DFB-LD) that oscillates in a single axis mode has been widely used because of its ease of use and high reliability. In the DFB-LD, a diffraction grating having a depth of about 30 nm is formed throughout the resonator, and stable single-axis mode oscillation can be obtained at a wavelength corresponding to a product of the diffraction grating period and twice the equivalent refractive index. While stable single-axis mode oscillation can be obtained, tuning over a wide range of oscillation wavelengths is impossible with DFB-LD, and products that differ only in wavelength for each ITU grid are usually used to construct a WDM transmission system. Yes. For this reason, it is necessary to use a different product for each wavelength, and this causes an increase in shelf management cost and the maintenance of excess inventory for failure handling. Furthermore, in the ROADM that switches the optical path according to the wavelength, if a normal DFB-LD is used, the variable width is limited to a wavelength range that can be changed by a temperature change of about 3 nm, and the ROADM that actively uses wavelength resources. This makes it difficult to construct an optical network that takes advantage of these features.

  In order to overcome these problems of the current DFB-LD and realize single-axis mode oscillation in a wide wavelength range, researches on tunable lasers have been vigorously conducted. There are two types of wavelength tunable lasers: a type in which a wavelength tunable mechanism is introduced in the same element as the laser resonator, and a type in which this is introduced outside the element. The former is a DBR-LD (Distributed Bragg Reflector Laser Diode) shown in FIG. 1 in which the light emitting region and the distributed reflection region are separately arranged in the same element, and the diffraction grating period is further changed periodically to sandwich the light emitting region. Many structures such as Sampled-grading-DBR-LD shown in FIG. 2 and similar SSG (Super Structure Grading) -DBR-LD shown in FIG. 3 have been proposed. Although the wavelength tunable range of DBR-LD was limited to about 10 nm at the maximum, the proposed sampled-grading-DBR-LD tunablely exceeds 100 nm by skillfully utilizing the Vernier effect peculiar to this structure. Operation, 40nm quasi-continuous wavelength variable operation is realized.

  For the wavelength tunable light source in which the latter wavelength tunable mechanism is provided outside the element, a method is proposed in which a diffraction grating is provided outside the element as shown in FIG. Has been.

  There has also been proposed a structure in which an optical resonator is configured by a PLC (Planar Lightwave Circuit) and an LD or SOA (Semiconductor Optical Amplifier) is directly mounted on the PLC to realize a wavelength tunable light source. FIG. 5 shows a configuration in which a wavelength tunable light source is realized by a combination of a ring resonator and SOA. The ring resonators constituted by the PLC are characterized in that their circumferences are slightly different. This difference in circumference generates a vernier effect and realizes a variable wavelength operation in a wide wavelength range.

  In addition to these single wavelength tunable lasers, research and development are now underway in which a modulator is added in the same module. An example of this is shown in FIG. A Mach-Zehnder modulator is monolithically integrated on the output side of the above-described Sampled-gating-DBR-LD to generate a high-speed, low-chirping modulation signal that enables long-distance large-capacity optical communication. If this integrated device is used, it is possible to perform a modulation operation simultaneously with a wavelength variable operation using a very compact module. As a result, the wavelength variable transponder module can be significantly reduced in size.

  Examples of documents describing the prior art will be given below. Patent Document 1 describes a wavelength tunable laser including a multiple ring resonator composed of ring-shaped waveguides having different optical path lengths.

  Patent Document 2 discloses that the wavelength conversion light power can be improved by changing the polarization direction of the oscillation mode of a semiconductor laser as a fundamental wave light source so that the coupling efficiency between the semiconductor laser and the optical waveguide can be improved. A laser beam generator that can be increased is described.

  Patent Document 3 describes an optical composite module in which all light receiving and emitting elements and optical elements are mounted and fixed on a single substrate, and the optical elements are mounted using a passive alignment technique.

  Patent Document 4 is a document related to the alignment technique, and will be described in the section [Description of Embodiments].

JP 2006-278769 A Japanese Patent Laid-Open No. 9-80497 JP-A-11-26875 JP 2000-231041 A

  There are two attempts to integrate the modulator with the wavelength tunable laser: a method in which each modulator is manufactured separately and optically coupled inside the module, and a method in which the modulator is integrated monolithically as shown in FIG. The former requires a complicated module manufacturing process, and there is concern about a low yield. On the other hand, the latter has the advantage that it can be compactly mounted in the module because the semiconductor element itself is small. On the other hand, at least five times of crystal growth and accompanying complicated semiconductor processes are required. There is concern about a decrease in yield of characteristics due to this complicated manufacturing process, and there are concerns about an increase in the number of element selection steps and an increase in manufacturing cost.

  Furthermore, since the monolithically integrated wavelength tunable laser uses a refractive index change caused by carrier injection, the loss caused by this causes a decrease in oscillation characteristics. For this reason, for example, the sampled-grading-DBR-LD shown in FIG. 2 uses a structure in which the SOA is monolithically integrated on the optical output end face side, and introduces a structure that guarantees a decrease in optical output that occurs when the wavelength is variable. doing. The integration of the SOA further complicates the device structure, and there is a concern that the yield may further decrease.

  In addition, compound semiconductor devices, particularly InP-based semiconductors, cannot be expected to increase in wafer size from 2 inches. For this reason, an increase in element area due to monolithic integration is directly reflected in an increase in cost.

  An object of the present invention is to overcome the above-mentioned problems in realizing the function-integrated wavelength tunable laser with these conventional structures, and to implement various optical active elements at a low cost with a high yield, and an integrated optical device required in an optical network. Is to provide promptly.

  Hereinafter, means for solving the problem will be described using the numbers used in [DETAILED DESCRIPTION] in parentheses. These numbers are added to clarify the correspondence between the description of [Claims] and [Mode for Carrying Out the Invention]. However, these numbers should not be used to interpret the technical scope of the invention described in [Claims].

  An optical device manufacturing method according to the present invention is formed by distinguishing between a step of forming a planar optical waveguide (41a) on a substrate (40) and a region that transmits light of a predetermined wavelength and a region that blocks light on the substrate. The first light having the first optical element side alignment mark formed by the step of forming the first substrate side alignment mark (46a) and the distinction between the region transmitting light of a predetermined wavelength and the region blocking light Forming the element (18); placing the first optical element on the substrate; first substrate-side alignment mark and first optical element-side alignment mark when irradiated with light of a predetermined wavelength; Detecting the position of the first optical element relative to the substrate, coupling the planar optical waveguide (41a) and the optical waveguide (41b) included in the first optical element, and Fixed to board That and a step. The first optical element is fixed to the substrate by metal pressure bonding. The optical device manufacturing method further includes the step of forming, on the substrate (40), a second substrate-side alignment mark (46b) formed by distinguishing between a region transmitting light of a predetermined wavelength and a region blocking light, Forming a second optical element (17) having a second optical element side alignment mark formed by distinguishing between a region transmitting light of a predetermined wavelength and a region blocking light; and placing the second optical element on a substrate And positioning the second optical element relative to the substrate by detecting the second substrate-side alignment mark and the second optical element-side alignment mark when irradiated with light of a predetermined wavelength. A step of coupling the optical waveguide included in the first optical element and the optical waveguide included in the second optical element, and a step of fixing the second optical element to the substrate by crimping a metal after fixing the first optical element; Is provided.

  As described above, the required light function can be easily realized by passively mounting the active elements such as the SOA and the modulator according to the necessity shown in the present invention on the Si substrate in a multi-chip configuration. Such optical devices having different functions have been coupled through lenses or the like, but the configuration is greatly simplified by the multi-chip passive alignment technology proposed in the present invention. This can be expected to improve reliability, reduce costs, and shorten module lead time.

  Here, the integration method of the boost SOA and the modulator has been described for the wavelength tunable laser, but other optical functions, for example, other optical active elements such as wavelength conversion are integrated to realize an unprecedented integrated function. Can do.

A conventional example of a wavelength tunable laser is shown. A conventional example of a wavelength tunable laser is shown. A conventional example of a wavelength tunable laser is shown. A conventional example of a wavelength tunable laser is shown. A conventional example of a wavelength tunable laser is shown. A conventional example of a wavelength tunable laser is shown. 1 shows a wavelength tunable laser according to an embodiment of the present invention. 1 shows a wavelength tunable laser according to an embodiment of the present invention. It is a figure for demonstrating the method of passive alignment. It is a figure for demonstrating the method of passive alignment. It is a figure for demonstrating the method of passive alignment. It is a figure for demonstrating the method of passive alignment. It is a figure for demonstrating the method of passive alignment. 1 shows an optical device according to one embodiment of the present invention. 1 shows an optical device according to one embodiment of the present invention. 1 shows an optical device according to one embodiment of the present invention. 1 shows an optical device according to one embodiment of the present invention.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. FIG. 7 shows a configuration of the wavelength tunable laser 10 in which the boost SOA according to the present embodiment is integrated. The wavelength tunable laser 10 includes three ring resonators 21 to 23 that are ring-shaped waveguides having optical path lengths different from each other, and the ring resonators 21 to 23 pass through directional couplers 24 to 27 and waveguides 28 and 29. Are connected to each other, the input / output side waveguide 12 having one end coupled to the ring resonator 21 via the directional coupler 11, and the ring resonator 23 via the directional coupler 13. A reflection-side waveguide 14 having one end coupled thereto, a PLC substrate 15 on which the multiple ring resonator 20, the input / output-side waveguide 12 and the reflection-side waveguide 14 are formed, and the other end of the reflection-side waveguide 14. The high reflection film 56, the SOA 18 with phase control in which one optical input / output end is coupled to the other end of the input / output side waveguide 12, and the optical input / output end at the other optical input / output end of the SOA 18 with phase control. S for boost to which is connected And an A17. The wavelength tunable laser 10 is also a film heater that changes the resonance wavelength of the multiple ring resonator 20 by heating the ring resonators 21 to 23, and suppresses the entry of high-order mode light into the multiple resonator 20. A mode filter or the like for propagating mode light is provided.

  The ring resonators 21 to 23 are formed by, for example, PLC technology, and various waveguides such as a ring-shaped waveguide are, for example, a silica glass waveguide in which a silica glass is deposited on a silicon substrate or a glass substrate, or a strong glass waveguide. It is formed of a ferroelectric waveguide obtained by thinning a dielectric material (such as lithium niobate).

  The light emitted from the boost SOA 17 is the boost SOA 17 → the SOA with phase control → the input / output side waveguide 12 → the directional coupler 11 → the multiple ring resonator 20 → the directional coupler 13 → the reflection side waveguide 14 → High reflection film 56 → reflection side waveguide 14 → directional coupler 13 → multiple ring resonator 20 and mode filters 32 and 33 → directional coupler 11 → input / output side waveguide 12 and mode filter 31 → SOA 17 Come back through. This return light becomes the strongest when the resonance wavelength of the multiple ring resonator 20 is reached. The reason is that the ring resonators 21 to 23 constituting the multiple ring resonator 20 have slightly different FSR (Free Spectral Range), and therefore the reflection (transmission) generated in each ring resonator 21 to 23. This is because a larger reflection occurs at a wavelength (resonance wavelength) in which the periodic changes of the two coincide.

  On the other hand, the resonance wavelength, that is, the wavelength having the same period, varies greatly depending on the circumferential length of each of the ring resonators 21 to 23 and the change in waveguide refractive index. This waveguide refractive index can be changed by the thermo-optic effect. That is, by using the temperature characteristics of the ring resonators 22 and 23, the energization amount of the film heater provided at the position corresponding to each of the ring resonators 22 and 23 is controlled, so that the multiple ring resonator 20 It is possible to change the resonance wavelength. At this time, the wavelength of the light emitted from the boost SOA 17 is also controlled and changed in the SOA 18 with phase control. Thus, in this embodiment, three ring resonators 21 to 23 having slightly different circumferences are connected in series to form a multiple ring resonator 20, and the vernier effect generated thereby is skillfully used. Yes.

  On the PLC substrate 15, the SOA 18 with phase control in which the antireflection coating is applied to the end portion on the side coupled to the input / output side waveguide 12 is directly mounted. The SOA 18 with phase control is directly mounted on the PLC substrate 15 by passive alignment technology. The passive alignment technology, which will be described in detail later, performs positioning using a mark pattern formed on the PLC substrate surface and a mark pattern of an LD chip. This is a technology that can greatly improve the cost and lead time of module fabrication without the need for a core. Further, the boost SOA 17 is configured as a separate element from the phase-controlled SOA 18 and is mounted on the same PLC substrate 15 by using a passive alignment technique. By mounting in this manner, the optical waveguide of the boost SOA 17 and the optical waveguide of the SOA 18 with phase control are coupled with high efficiency. Since the SOA 18 with phase control and the SOA 17 for boosting are selected as non-defective products at the chip level, it is possible to prevent a decrease in yield due to defective elements on one side. In this way, necessary characteristics can be realized by mounting necessary optical elements according to needs on a multichip. Further, by integrating the boost SOA, a high output operation can be realized.

  FIG. 8 shows a modulator integrated wavelength tunable laser according to the present invention. On the PLC substrate 15, as in FIG. 7, an SOA 18 with phase control in which an antireflection coating is applied to the end portion coupled to the input / output side waveguide 12 is directly mounted. A multi-ring resonator 20 having a three-stage configuration is formed in the coupled input / output side waveguide 12, thereby performing a wavelength variable operation. The SOA 18 with phase control is directly mounted on the PLC substrate 15 by passive alignment technology. Further, the modulator 19 is passively mounted on the PLC substrate 15 as a separate chip on the output side of the SOA 18 with phase control. Thereby, a modulation operation is realized. The wavelength variable operation is performed by energizing the heaters formed on the ring resonators 21 to 23 to change the refractive index. As in FIG. 7, with this configuration, the non-defective product can be selected in advance separately for both the SOA with phase control 18 and the modulator 19, and therefore, a decrease in yield due to the inclusion of both defective elements can be kept low.

  Here, the method of integrating the boost SOA 17 and the modulator 19 with respect to the wavelength tunable laser has been described. However, other optical functions, for example, other optical active elements such as wavelength conversion are integrated to provide an unprecedented integration function. Can be realized.

  Next, a method for mounting a semiconductor element such as an SOA or a modulator on a substrate by passive alignment will be described in detail. A technique for positioning a single semiconductor element by passive alignment is described in Patent Document 4, for example.

  First, a procedure for mounting one semiconductor element will be described with reference to FIGS. 9A is a sectional view of the Si substrate 40 and the semiconductor element 44, and FIG. 9B is a top view thereof. A Si substrate 40 is prepared as the PLC substrate 15 shown in FIGS. By forming the waveguide 41a on the Si substrate 40, a PLC (planar lightwave circuit) is formed. The waveguide 41a shown in FIGS. 9A and 9B corresponds to a portion close to the SOA 18 with phase control of the input / output side waveguide 12 of FIGS.

  The waveguide 41 a in the vicinity of the semiconductor element 44 is formed at a predetermined first depth from the surface of the Si substrate 40. In the installation region where the semiconductor element 44 is installed, the Si substrate 40 is cut to a second depth deeper than the first depth. The surface of the shaved portion is generally parallel to the surface of the unshaved portion. One end of the waveguide 41a is exposed on the side surface of the installation region. The waveguide 41 on the semiconductor element 44 side is connected to one end of the waveguide 41a.

  A base member 45 for adjusting the height of the waveguide 41 to the height of the waveguide 41 a is formed on the surface of the Si substrate 40 in the installation region of the semiconductor element 44. The upper surface of the base member 45 is substantially parallel to the surface of the Si substrate 40. A mark 46 is further provided in the installation area of the Si substrate 40. The mark 46 does not transmit electromagnetic waves of a predetermined wavelength, in this embodiment infrared rays. The area around the mark 46 transmits infrared rays. Two or more marks 46 are preferably provided. In order to increase the alignment accuracy of the optical waveguide, most preferably, a pair of marks 46 arranged so as to sandwich the position corresponding to the waveguide 41 on the semiconductor element 44 side is formed as shown in FIG. 9B. .

  FIG. 9C (a) shows a surface of the semiconductor element 44 on the side facing the Si substrate 40 (bonding surface, lower surface of FIG. 9A). An electrode is formed on the electrode forming portion 47 of the joint surface. The portion where the electrode is formed does not transmit infrared rays. An electrode removal portion 48 is formed by removing the electrode in a predetermined region of the joint surface. The electrode removal portion 48 is a mark for alignment. The arrangement of the electrode removal portion 48 corresponds to the arrangement of the mark 46 on the Si substrate 40 side. When the electrode removal portion 48 and the mark 46 correspond to each other in position, the mark 46 is included in the electrode removal portion 48 and is smaller than the electrode removal portion 48. The electrode removal portion 48 transmits infrared rays. The electrode removal portion 48 is preferably a pair of regions arranged so as to sandwich the waveguide 41 when viewed in the normal direction of the joint surface.

  FIG. 9C (b) shows an element back surface (an upper surface in FIG. 9A) opposite to the bonding surface of the semiconductor element 44. FIG. The back surface of the element is substantially parallel to the bonding surface. A conductive electrode forming portion 49 that does not transmit infrared rays and an electrode removal portion 50 that transmits infrared rays are formed on the back surface of the element. When the electrode removal portion 50 is viewed in the normal direction of the back surface of the element, the region of the electrode removal portion 48 on the bonding surface is included in the region of the electrode removal portion 50 on the back surface of the device.

  The semiconductor element 44 having such an electrode pattern is roughly positioned and placed on the electrode 45 in the installation area of the Si substrate 40. Infrared rays are irradiated in a direction from the Si substrate toward the semiconductor element 44. When an infrared image is picked up from the element back side of the semiconductor element 44, the Si substrate 40 depends on the relative positional relationship between the electrode removal portion 48 on the bonding surface visible through the electrode removal 50 on the element back side and the mark 46 of the Si substrate 40. The position of the semiconductor element 44 can be recognized. When the semiconductor element 44 is disposed at a correct position with respect to the Si substrate 40, all the marks 46 appear to be inside the electrode removal portion 48. Passive alignment is realized by determining that this state is correctly aligned.

  In this state, the waveguide 41 of the semiconductor element 44 and the waveguide 41a formed on the Si substrate 40 are in a state where the optical axes are accurately aligned. Thus, when it is determined that the semiconductor element 44 is disposed at the correct position, the semiconductor element 44 is fixed to the Si substrate 40 by means such as soldering. The waveguide 41 of the semiconductor element 44 thus fixed and the waveguide 41a on the Si substrate 40 side form one optical waveguide coupled with high accuracy.

  10A and 10B are diagrams for explaining a procedure for mounting two semiconductor elements by passive alignment. In this figure, as an example of the semiconductor element, the SOA 18 with phase control and the boosting SOA 17 are used as in FIG.

  First, the SOA 18 with phase control is positioned by the method described with reference to FIGS. 9A to 9C and fixed to the Si substrate 40 with a solder material having a first melting point. Next, the boosting SOA 17 is similarly positioned by the method described with reference to FIGS. 9A to 9C, and the solder material having a melting point lower than the first melting point is used by the Si substrate at a temperature lower than the first melting point. Fixed. By changing the type of the solder material in this way, the position of the SOA 18 with phase control is prevented from being shifted when the boost SOA 17 is fixed. For example, in the case of AuSn, solder materials having different melting points can be obtained by changing the mixing ratio of Au and Sn. Or it is obtained by using the solder material from which material differs. Such mounting forms an optical waveguide in which a plurality of semiconductor element waveguides (the waveguide 41c of the boost SOA 17 and the waveguide 41b of the SOA 18 with phase control) and the PLC waveguide 41a of the Si substrate 40 are coupled with high accuracy. This makes it possible to manufacture a wavelength tunable laser with a high yield.

  Instead of solder, by attaching a metal of the same kind (eg, Au) to the element side and the substrate side and performing pressure bonding, the element can be attached to the Si substrate without causing displacement. According to such a mounting method, even when the number of elements to be mounted on the Si substrate is a large number of three or more, it is easy to mount without causing a positional shift.

  FIG. 11 shows another embodiment of an optical device according to the present invention. In this optical device 60, a VOA (variable optical attenuator) 63 is formed by a planar optical waveguide formed on the substrate 15. The VOA shown in FIG. 11 is realized by a symmetric Mach-Zehnder interferometer that adjusts signal light output by giving a temperature difference to a pair of symmetrical optical waveguides. The optical modulator 62 is first positioned and fixed with respect to the substrate 15 by passive alignment. Next, the DFB laser 61 is positioned and fixed at a position adjacent to the optical modulator 62 by passive alignment. The DFB laser 61 is driven by a constant current and outputs signal light. The optical modulator 62 modulates the signal light output from the DFB laser 61. The optical signal output from the optical modulator 62 has little wavelength chirping during modulation, and is suitable for long-distance and large-capacity optical communication.

  FIG. 12 shows still another embodiment of the optical device according to the present invention. In this optical device 70, a tunable dispersion compensator 73 including a ring resonator and a heater for controlling the temperature of the ring resonator is formed by a planar optical waveguide formed on the substrate 15. The optical modulator 72 is first positioned and fixed with respect to the substrate 15 by passive alignment. Next, the DFB laser 71 is positioned and fixed by passive alignment at a position adjacent to the optical modulator 72. The DFB laser 71 is driven by a constant current and outputs signal light. The optical modulator 72 modulates the signal light output from the DFB laser 71. By energizing the heater of the ring resonator and precisely controlling the resonance wavelength, chromatic dispersion generated in the optical fiber is canceled out, and signal light suitable for long-distance and large-capacity optical communication can be obtained.

  FIG. 13 shows still another embodiment of the optical device according to the present invention. In this optical device 80, an optical switch (optical selector) 82 is formed by a planar optical waveguide formed on the substrate 15. The optical switch 82 is realized by a symmetric Mach-Zehnder interferometer. In the example shown in FIG. 13, the optical switch 82 selects one of the four-channel optical signals. The boost SOA 83 is first positioned and fixed to one end of the substrate 15 by passive alignment. Next, the optical modulator 84 is positioned and fixed by passive alignment at a position adjacent to the boost SOA 83. Further, the array DFB laser 81 is positioned and fixed to the other end of the substrate 15 by passive alignment. The array DFB laser 81 includes a plurality of (four in the example of FIG. 13) DFB lasers having different oscillation wavelengths. With such an optical device 80, the wavelength tunable laser and the modulator are integrated on one chip, and a wavelength tunable operation and a modulation operation over a wide range can be performed.

  FIG. 14 shows still another embodiment of the optical device according to the present invention. In this optical device 90, an optical coupler 92 is formed by an optical waveguide formed on the substrate 15. The optical coupler 92 couples a plurality of optical waveguides to one optical waveguide. The boost SOA 93 is positioned and fixed to one end of the substrate 15 by passive alignment. The optical modulator 94 is positioned and fixed at a position adjacent to the boost SOA 93. An array DFB laser 91 is positioned and fixed to the other end of the substrate 15 by passive alignment. The plurality of outputs of the array DFB laser 91 are respectively coupled to the plurality of channels of the optical coupler 92. With such an optical device, the wavelength variable operation and the modulation operation are realized with one chip.

DESCRIPTION OF SYMBOLS 10 Wavelength variable laser 11, 13, 24, 25, 26, 27 Directional coupler 12 Input / output side waveguide 15 PLC substrate 20 Multiple ring resonator 21, 22, 23 Ring resonator 56 High reflection film 60 Optical device 61 DFB Laser 62 Optical modulator 63 Variable optical attenuator 70 Optical device 71 DFB laser 72 Optical modulator 73 Variable dispersion compensator 80 Optical device 81 Array DFB laser 82 Optical switch 83 Boost SOA
84 Optical modulator 90 Optical device 91 Array DFB laser 92 Optical coupler 93 Boost SOA
94 Optical modulator

Claims (1)

Forming a planar optical waveguide on a substrate;
Forming a first substrate-side alignment mark formed on the substrate by distinguishing between a region transmitting light of a predetermined wavelength and a region blocking light;
Forming a first optical element having a first optical element side alignment mark formed by distinguishing between a region transmitting light of the predetermined wavelength and a region blocking light;
Placing the first optical element on the substrate;
By detecting said for the first substrate side first alignment mark and the first optical element side eye marks when irradiated with light of the predetermined wavelength, performing alignment of the first optical element relative to the substrate Coupling the planar optical waveguide and the optical waveguide included in the first optical element;
Fixing the first optical element to the substrate,
The first optical element is fixed to the substrate by metal crimping,
Furthermore, forming a second substrate-side alignment mark formed on the substrate by distinguishing between a region that transmits light of the predetermined wavelength and a region that blocks light;
The step of said light of a predetermined wavelength and have a for the second optical element side th alignment mark formed by the distinction between the region that shields the region transmitting, to form the first optical element and the different second optical element When,
Placing the second optical element on the substrate;
By detecting said for the second substrate side first alignment mark and the second optical element side eye marks when irradiated with light of the predetermined wavelength, performing alignment of the second optical element relative to the substrate The second optical element is disposed at a position adjacent to the first optical element, and the optical waveguide provided in the first optical element and the optical waveguide provided in the second optical element are not interposed through the planar optical waveguide. A step to join to
A method of manufacturing an optical device comprising: fixing the second optical element to the substrate by pressing a metal after fixing the first optical element.

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