CN102412234A - Aligning device for complementary metal oxide semiconductor - Google Patents
Aligning device for complementary metal oxide semiconductor Download PDFInfo
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- CN102412234A CN102412234A CN2011102538570A CN201110253857A CN102412234A CN 102412234 A CN102412234 A CN 102412234A CN 2011102538570 A CN2011102538570 A CN 2011102538570A CN 201110253857 A CN201110253857 A CN 201110253857A CN 102412234 A CN102412234 A CN 102412234A
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- complementary metal
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Abstract
The invention provides an aligning device for a complementary metal oxide semiconductor. The device is used for aligning and jointing the complementary metal oxide semiconductor with the peripheral region of mother glass, and the middle region of the mother glass is used for laminating a panel. The device comprises two grid marks which are aligned mutually, are parallel to the edge of the mother glass, and are arranged at the corners of the peripheral region of the upper side of the mother glass; and each grid-shaped mark is provided with a plurality of graduations. The aligning device can be used for assisting production personnel in judging the angular deflection when the complementary metal oxide semiconductor is jointed with a panel.
Description
Technical field
The present invention relates to a kind of alignment device of CMOS complementary metal-oxide-semiconductor, relate in particular to a kind of alignment device of CMOS complementary metal-oxide-semiconductor device on panel of fitting.
Background technology
CMOS complementary metal-oxide-semiconductor (Complementary Metal Oxide Semiconductor is abbreviated as CMOS), promptly complementary metal oxide semiconductors (CMOS) is the raw material that a kind of large-scale application is made in IC chip.CMOS complementary metal-oxide-semiconductor (CMOS) is made up of PMOS pipe and NMOS pipe jointly, and its feature is low-power consumption.Since the gate circuit that a pair of MOS forms in the CMOS complementary metal-oxide-semiconductor (CMOS) moment PMOS conducting NMOS conducting otherwise all by, more much higher than triode (BJT) efficient of linearity, so power consumption is very low.CMOS complementary metal-oxide-semiconductor (CMOS) has been widely used in many applications as sensing element, especially is applied in the LCD.
In the prior art, it is plain on glass all to utilize AB glue that CMOS complementary metal-oxide-semiconductor (CMOS) is pasted on manual mode, again TFT-LCD is carried out pressing.At present; Attaching required precision to CMOS complementary metal-oxide-semiconductor (CMOS) is ± 50 μ m, and angle is ± 1.5 degree, and the problem that this kind method is faced is; Producers are not easy the skew of identification angle attaching CMOS complementary metal-oxide-semiconductor (CMOS) when element is on glass.
In view of this; How to design a kind of alignment device of novel CMOS complementary metal-oxide-semiconductor device; To make things convenient for the industry personnel when the applying CMOS complementary metal-oxide-semiconductor is on panel, to carry out the judgement of angular deflection, be the problem that those skilled in the art need solution badly.
Summary of the invention
Fit in the defective of the judgement that is difficult for carrying out angular deflection on the panel to the CMOS complementary metal-oxide-semiconductor that exists in the prior art, the invention provides a kind of alignment device of CMOS complementary metal-oxide-semiconductor.
A kind of alignment device of CMOS complementary metal-oxide-semiconductor is provided according to the present invention; Be used for CMOS complementary metal-oxide-semiconductor is aimed at the peripheral region that fits in plain glass; The zone line of plain glass is used for the pressing panel, comprising: two palisade marks, align each other and be parallel to the edge of plain glass; And be arranged at the corner location of plain glass upside peripheral region, each palisade mark has a plurality of scales.
Preferably, two palisade marks can be arranged at CMOS complementary metal-oxide-semiconductor in the position that panel is fitted.
Preferably, panel is a liquid crystal panel.
Preferably, between two palisade marks at a distance of 770 μ m.
Preferably, between the two adjacent scales at a distance of 10 μ m.
Adopt the present invention can help producers when CMOS complementary metal-oxide-semiconductor is fitted in panel, to carry out the judgement of angular deflection.
Description of drawings
The reader with reference to advantages after the embodiment of the present invention, will become apparent various aspects of the present invention.Wherein,
Fig. 1 shows the alignment device according to CMOS complementary metal-oxide-semiconductor of the present invention;
Fig. 2 shows the enlarged drawing according to palisade mark of the present invention.
Embodiment
With reference to the accompanying drawings, specific embodiments of the invention is done further to describe in detail.
Fig. 1 shows the alignment device according to CMOS complementary metal-oxide-semiconductor of the present invention.With reference to Fig. 1; Two palisade marks 130 are positioned at the corner location of the peripheral region 110 of plain glass 100, and two palisade marks 130 align each other, and are parallel to the edge 111 of plain glass 100; Have a plurality of scales on each palisade mark 130, represent 10 μ m between the adjacent scale.In the present embodiment, at a distance of 770 μ m, the spacing between adjacent two scales is 10 μ m between two palisade marks 130.Liquid crystal panel (not indicating) is pressed on zone line 120 places of plain glass 100.
Fig. 2 shows the enlarged drawing according to palisade mark of the present invention.With reference to Fig. 2, can utilize palisade mark 130 to judge the deviation angle of CMOS complementary metal-oxide-semiconductor 140.Because the deviation angle of CMOS complementary metal-oxide-semiconductor 140 is 1.5 degree; Between two palisade marks 130 at a distance of 770 μ m; Therefore; According to 770 μ m * tan1.5=20 μ m, can draw CMOS complementary metal-oxide-semiconductor 140 need be less than two lattice scales with respect to the skew of two palisade marks 130.Producers are attaching CMOS complementary metal-oxide-semiconductor 140 when element is on glass, be qualified just as long as CMOS complementary metal-oxide-semiconductor 140 needs less than two lattice scales with respect to the skew of two palisade marks 130.
Adopt the present invention, can make things convenient for the industry personnel when element is on glass, to carry out the judgement of angular deflection at the applying CMOS complementary metal-oxide-semiconductor.
In the preceding text, illustrate and describe embodiment of the present invention.But those skilled in the art can understand, and under situation without departing from the spirit and scope of the present invention, can also specific embodiments of the invention do various changes and replacement.These changes and replacement all drop in claims restricted portion of the present invention.
Claims (5)
1. the alignment device of a CMOS complementary metal-oxide-semiconductor is used for said CMOS complementary metal-oxide-semiconductor is aimed at the peripheral region that fits in plain glass, and the zone line of said plain glass is used for the pressing panel, it is characterized in that, comprising:
Two palisade marks align each other and are parallel to the edge of said plain glass, and are arranged at the corner location of said plain glass upside peripheral region, and each said palisade mark has a plurality of scales.
2. the alignment device of CMOS complementary metal-oxide-semiconductor as claimed in claim 1 is characterized in that, said two palisade marks can be arranged at said CMOS complementary metal-oxide-semiconductor in the position that said panel is fitted.
3. the alignment device of CMOS complementary metal-oxide-semiconductor as claimed in claim 1 is characterized in that, said panel is a liquid crystal panel.
4. the alignment device of CMOS complementary metal-oxide-semiconductor as claimed in claim 1 is characterized in that, between said two palisade marks at a distance of 770 μ m.
5. the alignment device of CMOS complementary metal-oxide-semiconductor as claimed in claim 1 is characterized in that, between the adjacent two said scales at a distance of 10 μ m.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2011102538570A CN102412234A (en) | 2011-08-24 | 2011-08-24 | Aligning device for complementary metal oxide semiconductor |
Applications Claiming Priority (1)
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CN2011102538570A CN102412234A (en) | 2011-08-24 | 2011-08-24 | Aligning device for complementary metal oxide semiconductor |
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CN102412234A true CN102412234A (en) | 2012-04-11 |
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CN2011102538570A Pending CN102412234A (en) | 2011-08-24 | 2011-08-24 | Aligning device for complementary metal oxide semiconductor |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102902104A (en) * | 2012-10-15 | 2013-01-30 | 京东方科技集团股份有限公司 | Alignment method of phase difference plate and display panel |
CN109143629A (en) * | 2018-09-28 | 2019-01-04 | 张家港康得新光电材料有限公司 | The detection method of alignment film position precision in a kind of display panel mother matrix |
-
2011
- 2011-08-24 CN CN2011102538570A patent/CN102412234A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102902104A (en) * | 2012-10-15 | 2013-01-30 | 京东方科技集团股份有限公司 | Alignment method of phase difference plate and display panel |
CN102902104B (en) * | 2012-10-15 | 2015-11-25 | 京东方科技集团股份有限公司 | The alignment method of polarizer and display panel |
CN109143629A (en) * | 2018-09-28 | 2019-01-04 | 张家港康得新光电材料有限公司 | The detection method of alignment film position precision in a kind of display panel mother matrix |
CN109143629B (en) * | 2018-09-28 | 2022-05-20 | 张家港康得新光电材料有限公司 | Method for detecting position accuracy of alignment film in display panel mother board |
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Application publication date: 20120411 |