CN102412128B - Manufacturing methods of reversed trapeziform alternative gate and reversed trapeziform metal gate electrode - Google Patents
Manufacturing methods of reversed trapeziform alternative gate and reversed trapeziform metal gate electrode Download PDFInfo
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- CN102412128B CN102412128B CN 201010292584 CN201010292584A CN102412128B CN 102412128 B CN102412128 B CN 102412128B CN 201010292584 CN201010292584 CN 201010292584 CN 201010292584 A CN201010292584 A CN 201010292584A CN 102412128 B CN102412128 B CN 102412128B
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Abstract
The invention provides a manufacturing method of a reversed trapeziform alternative gate. The method comprises the following steps that: a gate oxide layer, a first nitridation layer and an oxide layer are successively deposited on a semiconductor substrate; etching is carried out on the oxide layer to form a rectangular groove and the bottom of the rectangular groove is exposed outside the surface of the first nitridation layer; a second nitridation layer is deposited and covers the bottom and side walls of the rectangular groove as well as the oxide layer; etching is successively carried out on the second nitridation layer and the first nitridation layer to form a reversed trapeziform groove, and the bottom of the reversed trapeziform groove is exposed outside the surface of the gate oxide layer; a reversed trapeziform alternative gate is formed in the reversed trapeziform groove; and the oxide layer, the first nitridation layer and the second nitridation layer at two sides of the reversed trapeziform alternative gate are removed. In addition, the invention also provides a manufacturing method of a reversed trapeziform metal gate electrode. According to the invention, a reversed trapeziform alternative gate with an ideal shape and a reversed trapeziform metal gate electrode with an ideal shape can be formed.
Description
Technical field
The present invention relates to semiconductor logic circuit and make the field, particularly a kind of trapezoidal replacement gate and manufacture method of trapezoidal metal gate electrode of falling of falling.
Background technology
At present, high dielectric constant insulating material and metal gate electrode will be used to make logic circuit device.
In order to control short-channel effect, the smaller szie requirement on devices further improves gate electrode electric capacity.This can realize by the thickness of continuous attenuate gate oxide, but the thing followed is the lifting of gate electrode leakage current.When silicon dioxide as gate oxide, when thickness was lower than 5.0 nanometers, leakage current just became and can't stand.Solution to the problems described above just is to use high dielectric constant insulating material to replace silicon dioxide, high dielectric constant insulating material can be hafnium silicate, hafnium silicon oxygen nitrogen compound, hafnium oxide etc., dielectric constant is generally all greater than 15, adopt this material can further improve gate capacitance, gate leak current can be significantly improved again simultaneously.For identical gate oxide thickness, with high dielectric constant insulating material and metal gate electrode collocation, its gate electrode leakage current will reduce several index magnitudes, and solve problem incompatible between high dielectric constant insulating material and the polysilicon with metal gate electrode replacement polygate electrodes.
The shape of metal gate electrode has multiplely in the prior art, comprises vertical (vertical) gate electrode, taper (tapered) gate electrode, trapezoidal (reversed trapeziform) gate electrode.The gate electrode of above-mentioned shape as shown in Figure 1.High dielectric constant insulating material is as gate oxide 101 among Fig. 1, and metal gate electrode 102 is positioned at the top of gate oxide 101.
The alignment windows of vertical gate electrode and taper gate electrode and contact hole (CT) is all smaller, contact hole is positioned at the top of metal gate electrode 102, if the top of gate electrode is narrower, during then follow-up making CT, CT is difficult to be aimed at gate electrode, that is to say that alignment windows is less.And in the gate fabrication process of back, described metal gate electrode need be filled in interlayer dielectric layer, and the metal gate electrode of described shape is suitable for reading less, so be difficult to fill in interlayer dielectric layer, hole (void) occurs in the position of filling easily.
Therefore, the trapezoidal gate electrode that falls demonstrates great advantage, and CD is bigger at its top, aims at easily with CT, and the bigger CD opening in top also is convenient to fill in interlayer dielectric layer, can hole not occur in the position of filling as vertical gate electrode or taper gate electrode.But prior art is difficult to accurate control trapezoidal angle, lack of homogeneity, thereby can influence the uniformity and the continuity of the cut-in voltage of gate electrode, make the circuit devcie that forms have relatively poor electrically.
The method that grid technology is made down trapezoidal metal gate electrode after the prior art utilization may further comprise the steps, and describes below in conjunction with Fig. 2 a to Fig. 2 f.
Step 21, see also Fig. 2 a, deposition has the gate oxide 201 and the polysilicon layer 202 of high-k successively on Semiconductor substrate 200.The gate oxide 201 of high-k can be hafnium silicate, hafnium silicon oxygen nitrogen compound, hafnium oxide etc., and dielectric constant is generally all greater than 15.
Step 22, see also Fig. 2 b, polysilicon layer 202 is carried out etching, form the grid of falling the trapezoidal polysilicon 202 '.
Step 23, seeing also Fig. 2 c, form side wall layer 203 in the both sides of the grid of falling the trapezoidal polysilicon 202 ', is mask with described side wall layer 203 and the grid of falling the trapezoidal polysilicon 202 ', formation source-drain area 204 in Semiconductor substrate 200.
Step 24, see also Fig. 2 d, on Semiconductor substrate 200, be not formed with the position deposition interlayer dielectric layer 205 of gate oxide 201 and the grid of falling the trapezoidal polysilicon 202 ', described interlayer dielectric layer 205 flushes with the grid of falling the trapezoidal polysilicon 202 ' through cmp (CMP) height afterwards.
Step 25, see also Fig. 2 e, remove the grid of falling the trapezoidal polysilicon 202 '.
Step 26, see also Fig. 2 f, fall trapezoidal metal gate electrode 206 in the position deposition formation of removing the grid of falling the trapezoidal polysilicon 202 '.This metal gate electrode material also can cover the surface of interlayer dielectric layer 205 during deposition, then by CMP, interlayer dielectric layer 205 lip-deep metal gate electrode materials is polished, and final formation falls trapezoidal metal gate electrode 206.Wherein, can be the combination of any two kinds or three kinds in titanium (Ti), titanium nitride (TiN), tantalum (Ta), the tantalum nitride (TaN) as the material of metal gate electrode.
Need to prove, forming the grid of falling the trapezoidal polysilicon is the key that forms trapezoidal metal gate electrode, in the above-mentioned steps 22, form the grid of falling the trapezoidal polysilicon, adopt the method for direct etching to form, because the restriction of lithographic technique, be difficult to control and form desired shapes, form easily undercutting, therefore make the final trapezoidal metal gate electrode that falls also have so defective, thus the performance when having influence on its work.
Summary of the invention
In view of this, the technical problem of the present invention's solution is: how to form the trapezoidal metal gate electrode of falling of ideal form.
For solving the problems of the technologies described above, technical scheme of the present invention specifically is achieved in that
The invention discloses a kind of manufacture method of falling trapezoidal replacement gate, this method comprises:
On Semiconductor substrate, deposit gate oxide, first nitration case and oxide layer successively;
Described oxide layer is carried out etching form rectangle groove, expose the first nitration case surface at the bottom of the described rectangle groove;
Deposit second nitration case, described second nitration case covers bottom, sidewall and the described oxide layer of rectangle groove;
Described second nitration case and first nitration case are carried out trapezoidal groove of etching formation successively, and the gate oxide surface is exposed at the described end of falling the trapezoidal groove;
Form trapezoidal replacement gate in the trapezoidal groove in described fall;
Remove oxide layer, first nitration case and second nitration case of trapezoidal replacement gate both sides.
Described formation is fallen the method for trapezoidal groove and is comprised:
Second nitration case of main etching rectangle groove outside, when exposing oxide layer, second nitration case of rectangle groove sidewall and bottom is etched simultaneously, and its trenched side-wall etching has the angle of inclination in groove;
First nitration case of over etching channel bottom stops etching to exposing the gate oxide surface.
Described main etching carries out in the etching reaction chamber, and its technological parameter is: the etching reaction cavity pressure is 10～100 millitorrs; Source power is 100～600 watts; The flow of argon gas is 50～300 standard cubic centimeter per minutes; The flow of carbon tetrafluoride is 10～150 standard cubic centimeter per minutes; The flow of fluoroform is 10～50 standard cubic centimeter per minutes; The flow of oxygen is 5～20 standard cubic centimeter per minutes.
Described over etching carries out in the etching reaction chamber, and its technological parameter is: the etching reaction cavity pressure is 10～100 millitorrs; Source power is 100～600 watts; The flow of argon gas is 50～200 standard cubic centimeter per minutes; The flow of one fluoromethane is 10～50 standard cubic centimeter per minutes; The flow of oxygen is 20～150 standard cubic centimeter per minutes.
Described removal is fallen the oxide layer of trapezoidal replacement gate both sides and is adopted hydrofluoric acid solution.
Described removal is fallen first nitration case of trapezoidal replacement gate both sides and second nitration case and is adopted phosphoric acid solution.
It is described that to fall trapezoidal replacement gate be polysilicon gate.
The invention also discloses a kind of manufacture method of falling trapezoidal metal gate electrode, this method comprises:
On Semiconductor substrate, deposit gate oxide, first nitration case and oxide layer successively;
Described oxide layer is carried out etching form rectangle groove, expose the first nitration case surface at the bottom of the described rectangle groove;
Deposit second nitration case, described second nitration case covers bottom, sidewall and the described oxide layer of rectangle groove;
Described second nitration case and first nitration case are carried out trapezoidal groove of etching formation successively, and the gate oxide surface is exposed at the described end of falling the trapezoidal groove;
Form trapezoidal replacement gate in the trapezoidal groove in described fall;
Remove oxide layer, first nitration case and second nitration case of trapezoidal replacement gate both sides;
Falling the both sides formation side wall layer of trapezoidal replacement gate, be mask with the described side wall layer and the trapezoidal replacement gate of falling, in Semiconductor substrate, form source-drain area;
On Semiconductor substrate, be not formed with down the position deposition interlayer dielectric layer of trapezoidal replacement gate, described interlayer dielectric layer through the height after the cmp with fall trapezoidal replacement gate and flush;
Fall trapezoidal replacement gate and remove described;
Form and fall trapezoidal metal gate electrode removing the position deposition of trapezoidal replacement gate.
Described interlayer dielectric layer is an oxide layer.
As seen from the above technical solutions, the present invention at first forms down trapezoidal groove, and falling trapezoidal groove with this is model, and deposition forms and falls trapezoidal replacement gate in groove, thereby final formation falls trapezoidal metal gate electrode.Wherein, formation trapezoidal groove can be passed through the etching technics parameter control, obtains the trapezoidal shape that falls of rule.With directly the replacement gate material is carried out etching in the prior art, the trapezoidal replacement gate of forming is compared, controllability can access the comparatively desirable trapezoidal replacement gate of falling than higher, thereby obtains the desirable trapezoidal metal gate electrode that falls.
Description of drawings
Fig. 1 is vertical gate electrode, taper gate electrode and the structural representation of trapezoidal gate electrode of falling.
Fig. 2 a to 2f utilizes the back grid technique to make down the structural representation of the detailed process of trapezoidal metal gate electrode in the prior art.
Fig. 3 makes down the method flow diagram of trapezoidal metal gate electrode for the present invention utilizes the back grid technology.
The structural representation of Fig. 3 a to Fig. 3 j trapezoidal metal gate electrode detailed process for the present invention makes down.
Embodiment
For make purpose of the present invention, technical scheme, and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, the present invention is described in more detail.
The present invention utilizes schematic diagram to describe in detail, when the embodiment of the invention is described in detail in detail, for convenience of explanation, the schematic diagram of expression structure can be disobeyed general ratio and be done local the amplification, should be with this as limitation of the invention, in addition, in the making of reality, should comprise the three dimensions size of length, width and the degree of depth.
The present invention utilizes method flow diagram that the back grid technology makes down trapezoidal metal gate electrode as shown in Figure 3, is elaborated below in conjunction with Fig. 3 a to Fig. 3 j, and it may further comprise the steps:
Step 31, shown in Fig. 3 a, deposition has gate oxide 301, first nitration case 302 and an oxide layer 303 of high-k successively on Semiconductor substrate 300.The gate oxide 301 of high-k can be hafnium silicate, hafnium silicon oxygen nitrogen compound, hafnium oxide etc., and dielectric constant is generally all greater than 15.First nitration case 302 is thinner, can be silicon nitride layer, as the etch stop layer of subsequent etching oxide layer 303; Oxide layer 303 is thicker, can be silicon oxide layer, and it has highly defined and has fallen the height of trapezoidal replacement gate.The described height that falls trapezoidal replacement gate is decided according to concrete processing procedure, and different application can have different numerical value.
Wherein, form rectangle groove, can carry out patterning to described photoresistance glue-line by coating photoresistance glue-line on the oxide layer 303 of deposition, the position of definition rectangle groove, the photoresistance glue-line with patterning is that mask carries out etching then, obtains rectangle groove.
Wherein, how forming down trapezoidal groove is a key of the present invention, whether the shape of trapezoidal groove is desirable, determined whether trapezoidal replacement gate has desired shapes, thereby determined whether the trapezoidal metal gate electrode of falling of final formation has desired shapes.
The method that the present invention adopts main etching and over etching to combine progressively forms trapezoidal groove.The main etching process comprises: second nitration case 304 of etching rectangle groove outside, during oxide layer 303 under exposing second nitration case 304, stop etching, in this process, second nitration case 304 of rectangle groove sidewall and bottom also is etched simultaneously, and the rectangle groove sidewall is formed with the angle of inclination in groove.Main etching carries out in the etching reaction chamber, and the etching reaction cavity pressure is 10～100 millitorrs (mt); Source power is 100～600 watts; The flow of argon gas is 50～300 standard cubic centimeter per minutes (sccm); The flow of carbon tetrafluoride is 10～150 standard cubic centimeter per minutes; Fluoroform (CHF
3) flow be 10～50 standard cubic centimeter per minutes; The flow of oxygen is 5～20 standard cubic centimeter per minutes.In this process, because fluoroform contains protium, so can produce a large amount of polymer (polymer), the sidewall of covering groove makes trenched side-wall have inside angle of inclination gradually.Learn that by experience in the fluorinated gas of similar fluoroform, the content of protium is high more, is easy to generate polymer more, think obtain the inclination angle bigger fall trapezoidal groove, also can adopt difluoromethane (CH in the specific embodiment
2F
2) wait the higher gas of hydrogen content to carry out main etching.For example, can adopt these gases of argon gas, carbon tetrafluoride, difluoromethane and oxygen to finish above-mentioned main etching process.
Because after the main etching process finished, first nitration case 302 of channel bottom was not also removed fully, so need carry out over etching to it, stops etching to exposing gate oxide 301 surfaces.Over etching carries out in the etching reaction chamber equally, and the etching reaction cavity pressure is 10～100 millitorrs; Source power is 100～600 watts; The flow of argon gas is 50～200 standard cubic centimeter per minutes; One fluoromethane (CH
3F) flow is 10～50 standard cubic centimeter per minutes; The flow of oxygen is 20～150 standard cubic centimeter per minutes.Because the existence of this process one fluoromethane makes that the selection of etching first nitration case and gate oxide is higher than very, promptly can not carry out etching substantially after complete first nitration case of etching to gate oxide.
Need to prove, because final formation is metal gate electrode, the trapezoidal replacement gate of falling can be substituted by metal gate electrode, that is to say down that trapezoidal replacement gate finally is non-existent, so can have multiplely as falling the material of trapezoidal replacement gate, the material of replacement gate is a polysilicon in the embodiment of the invention.
Remove the oxide layer 303 of trapezoidal replacement gate 305 both sides, be preferably and adopt the hydrofluoric acid solution wet method to remove, remove first nitration case 302 of trapezoidal replacement gate 305 both sides and second nitration case 304 and be preferably and adopt the phosphoric acid solution wet method to remove.When can guarantee in this step to adopt wet method to remove other structures, do not carry out etching to falling trapezoidal replacement gate.
So far, of the present inventionly fall trapezoidal replacement gate and formed and finish.
Next, step 37 to step 40 is the method according to prior art, is falling on the basis of trapezoidal replacement gate, forms to fall trapezoidal metal gate electrode.
The material of interlayer dielectric layer also can have multiple, and for example oxide layer or nitration case are oxide layer in the embodiment of the invention.
The etch polysilicon replacement gate can adopt dry etching in the embodiment of the invention, also can adopt wet etching.Wherein, the gas of dry etching can comprise sulphur hexafluoride (SF
6) or chlorine (Cl
2); Wet etching specifically can adopt the mixed solution of nitric acid and hydrofluoric acid to remove.No matter dry etching or wet etching, when can guarantee the etch polysilicon replacement gate, the interlayer dielectric layer to its both sides does not carry out etching.
This metal gate electrode material also can cover the surface of interlayer dielectric layer 308 during deposition, then by CMP, interlayer dielectric layer 308 lip-deep metal gate electrode materials is polished, and final formation falls trapezoidal metal gate electrode 309.Wherein, can be the combination of any two kinds or three kinds in titanium (Ti), titanium nitride (TiN), tantalum (Ta), the tantalum nitride (TaN) as the material of metal gate electrode.
Need to prove, the gate oxide of high-k can just deposit in step 31 of the present invention and form, also can be in step 31 still form the conventional gate oxide that constitutes by oxide, follow-up before the material of plated metal gate electrode, conventional gate oxide is removed, and the gate oxide of deposition high-k gets final product on this position then.Because key of the present invention do not lie in this, so only carry out explanation on the flow process for example in one way.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being made, is equal to replacement, improvement etc., all should be included within the scope of protection of the invention.
Claims (9)
1. one kind is fallen the manufacture method of trapezoidal replacement gate, and this method comprises:
On Semiconductor substrate, deposit gate oxide, first nitration case and oxide layer successively;
Described oxide layer is carried out etching form rectangle groove, expose the first nitration case surface at the bottom of the described rectangle groove;
Deposit second nitration case, described second nitration case covers bottom, sidewall and the described oxide layer of rectangle groove;
Described second nitration case and first nitration case are carried out trapezoidal groove of etching formation successively, and the gate oxide surface is exposed at the described end of falling the trapezoidal groove;
Form trapezoidal replacement gate in the trapezoidal groove in described fall;
Remove oxide layer, first nitration case and second nitration case of trapezoidal replacement gate both sides.
2. the method for claim 1 is characterized in that, described formation is fallen the step of trapezoidal groove and comprised:
Second nitration case of main etching rectangle groove outside, when exposing oxide layer, second nitration case of rectangle groove sidewall and bottom is etched simultaneously, and its trenched side-wall etching has the angle of inclination in groove;
First nitration case of over etching channel bottom stops etching to exposing the gate oxide surface.
3. method as claimed in claim 2 is characterized in that described main etching carries out in the etching reaction chamber, its technological parameter is: the etching reaction cavity pressure is 10～100 millitorrs; Source power is 100～600 watts; The flow of argon gas is 50～300 standard cubic centimeter per minutes; The flow of carbon tetrafluoride is 10～150 standard cubic centimeter per minutes; The flow of fluoroform is 10～50 standard cubic centimeter per minutes; The flow of oxygen is 5～20 standard cubic centimeter per minutes.
4. method as claimed in claim 2 is characterized in that described over etching carries out in the etching reaction chamber, its technological parameter is: the etching reaction cavity pressure is 10～100 millitorrs; Source power is 100～600 watts; The flow of argon gas is 50～200 standard cubic centimeter per minutes; The flow of one fluoromethane is 10～50 standard cubic centimeter per minutes; The flow of oxygen is 20～150 standard cubic centimeter per minutes.
5. the method for claim 1 is characterized in that, described removal is fallen the oxide layer of trapezoidal replacement gate both sides and adopted hydrofluoric acid solution.
6. the method for claim 1 is characterized in that, described removal is fallen first nitration case of trapezoidal replacement gate both sides and second nitration case and adopted phosphoric acid solution.
7. the method for claim 1 is characterized in that, described to fall trapezoidal replacement gate be polysilicon gate.
8. one kind is fallen the manufacture method of trapezoidal metal gate electrode, and this method comprises:
On Semiconductor substrate, deposit gate oxide, first nitration case and oxide layer successively;
Described oxide layer is carried out etching form rectangle groove, expose the first nitration case surface at the bottom of the described rectangle groove;
Deposit second nitration case, the bottom of the described second nitration case covering groove, sidewall and described oxide layer;
Described second nitration case and first nitration case are carried out trapezoidal groove of etching formation successively, and the gate oxide surface is exposed at the described end of falling the trapezoidal groove;
Form trapezoidal replacement gate in the trapezoidal groove in described fall;
Remove oxide layer, first nitration case and second nitration case of trapezoidal replacement gate both sides;
Falling the both sides formation side wall layer of trapezoidal replacement gate, be mask with the described side wall layer and the trapezoidal replacement gate of falling, in Semiconductor substrate, form source-drain area;
On Semiconductor substrate, be not formed with down the position deposition interlayer dielectric layer of trapezoidal replacement gate, described interlayer dielectric layer through the height after the cmp with fall trapezoidal replacement gate and flush;
Fall trapezoidal replacement gate and remove described;
Form and fall trapezoidal metal gate electrode removing the position deposition of trapezoidal replacement gate.
9. method as claimed in claim 8 is characterized in that, described interlayer dielectric layer is an oxide layer.
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| CN103531460B (en) * | 2012-07-05 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | The manufacture method of inverted trapezoidal replacement gate |
| CN104576373B (en) * | 2013-10-11 | 2018-04-06 | 中国科学院微电子研究所 | Afterwards in grid technique pseudo- gate device and semiconductor devices forming method |
| CN106601793B (en) * | 2015-10-15 | 2020-05-01 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
| CN107994055B (en) * | 2017-11-10 | 2020-09-04 | 武汉华星光电半导体显示技术有限公司 | Bendable display panel and manufacturing method thereof |
| US10847596B2 (en) | 2017-11-10 | 2020-11-24 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Bendable display panel and fabricating method thereof |
| CN112928153B (en) * | 2019-12-05 | 2023-07-04 | 中芯国际集成电路制造（天津）有限公司 | Semiconductor structure and forming method thereof |
| CN114335402A (en) * | 2020-10-12 | 2022-04-12 | 上海和辉光电股份有限公司 | Flexible substrate bubble repairing method, flexible substrate and flexible display panel |
| CN113192825A (en) * | 2021-04-26 | 2021-07-30 | 广州粤芯半导体技术有限公司 | Manufacturing method of split-gate trench power device |
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| CN1265445C (en) * | 2002-08-14 | 2006-07-19 | 上海宏力半导体制造有限公司 | Method of forming light doped drain electrode using inverse taper grid structure |
| US7056794B2 (en) * | 2004-01-09 | 2006-06-06 | International Business Machines Corporation | FET gate structure with metal gate electrode and silicide contact |
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