CN102410124A - Highly reliable cuprous oxide semiconductor sparking plug sealing method - Google Patents
Highly reliable cuprous oxide semiconductor sparking plug sealing method Download PDFInfo
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- CN102410124A CN102410124A CN2010102896400A CN201010289640A CN102410124A CN 102410124 A CN102410124 A CN 102410124A CN 2010102896400 A CN2010102896400 A CN 2010102896400A CN 201010289640 A CN201010289640 A CN 201010289640A CN 102410124 A CN102410124 A CN 102410124A
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Abstract
The purpose of a highly reliable cuprous oxide semiconductor sparking plug sealing method provided by the invention is to provide a sealing method which does not need to carry out oxidation treatment on metal parts in advance and has a high sealing percent of pass. The method is implemented by the following technical scheme: an enamel layer is coated on the lower end surface of a semiconductor part and then sintered, a pre-vitrified glass blank and a porcelain tube are coaxially mounted into a sparking plug shell, and the assembly is then put into a clamp, sent into a furnace along with the clamp and heated to be sealed under high temperature; the sealing process is carried out by two times of heating and pressurization, and in each time of heating process, the porcelain tube connected with the upper end in the sparking plug shell is utilized to apply axial pressure on the end surface of the melted glass blank, so that the melted glass blank can be sufficiently filled in the space of a sealed area. The method solves the problem that the quality of the transitional layer of the bonding interface between an oxidation film and the fused sealing glass is poor.
Description
Technical field
The invention belongs to low pressure, high energy electric ignition technical field, more particularly, the present invention relates to a kind of method that seals cuprous oxide semiconductor ignition electric nozzle.
Background technique
The cuprous oxide semiconductor discharge plug is a kind of igniter that uses in the motor; The voltage that it produces by means of ignition mechanism in the ignition system; Act between cuprous oxide semiconductor discharge plug centre electrode and the lateral electrode (sparking plug frame) through the cable transmission; Make sparking plug top cuprous oxide semiconductor produce " avalanche type " discharge, the gas mixture that ignition combustion is indoor.It has get angry that voltage is low, spark energy big, advantages such as heat shock resistance, anti-spark erosion,, long service life insensitive to environmental condition (like air pressure).
Because sparking plug partly is assemblied in the firing chamber, residing environmental conditions is comparatively abominable ,-50 ℃～+ 500 ℃ approximately of its operating ambient temperatures, (in short-term+600 ℃, 10s).In engine operation process, cuprous oxide semiconductor discharge plug ignition end face also will bear the highpressure that produces in the motor.Between seal glass and centre electrode outer surface, the sparking plug frame internal surface; And any blow-by of seal glass self; To cause the combustion gas of high heat, high pressure to be leaked from the firing chamber through the cuprous oxide semiconductor discharge plug; Cause the centre electrode high temperature corrosion, even make the cuprous oxide semiconductor discharge plug can not operational failure.Therefore require the cuprous oxide semiconductor discharge plug except possessing electrical property such as the voltage of ignition, the requirement that also should have highly reliable sealing and anti-ambient temperature.In order to satisfy this Environmental Conditions characteristics, can adopt usually chunk glass is assemblied in the sparking plug privileged site, through heat, make the chunk glass fusion and fill up this zone and reach sealing.
In the prior art, residing sealing-in environment is different during according to glass capsulation, can the glass capsulation technology be divided into following three kinds: little reducing atmosphere glass capsulation, the sealing of gas (nitrogen, argon gas etc.) cover glass, oxidizing atmosphere glass capsulation.
China's publication number is that the patent of CN101259985, CN101117276 discloses a kind of sealing that is applicable between process pre-oxidation processing metal and the glass, and the metal surface after the sealing-in simultaneously beyond the seal interface can obtain the method for little reducing atmosphere glass capsulation of metal true qualities.This method is under the high temperature of sealing-in, and little reducing atmosphere has reduction to the metalwork surface film oxide, has reduced the surface treatment difficulty to the metal surface beyond the seal interface after the sealing-in.But; Seal for the cuprous oxide semiconductor discharge plug; Because its semiconductor device end face local sintering has and contains semi-conductive cuprous oxide material; Under high temperature, reducing atmosphere, can produce reduction, and cause the semiconducting behavior of cuprous oxide semi-conducting material to reduce even inefficacy, cause that the product electrical property reduces.This shows unsuitable this type cuprous oxide semiconductor discharge plug sealing of the method for this little reducing atmosphere glass capsulation.
China's publication number is the method for the disclosed a kind of forvacuum ar gas environment glass capsulation of CN101538127, needs special device to burner hearth forvacuum, and in burner hearth, recharges high-purity argon gas and seal, and because of its processing cost is bigger, and seldom uses.
Existing technology oxidizing atmosphere glass capsulation method is fit to the sealing-in of cuprous oxide semiconductor discharge plug, is because semiconductor device high temperature sintering in oxidizing atmosphere forms.For satisfying the working environment of sparking plug high temperature, high pressure, existing technology often adopts the high sealing material of softening temperature, is about the Pyrex of a kind of DM346 of 720 ℃ like softening temperature.The seal process of this method is after metalwork is handled, assembled through pre-oxidation, to accomplish in the oxidizing atmosphere high temperature pressing.Because when the sealing-in of cuprous oxide semiconductor discharge plug, sealing temperature is high, adds oxidative environment, and the metalwork patina that generates on the surface that is heated is not fine and close, and the oxide thickness of generation is big and loose.The transition layer of the seal glass combination interface of this patina of usefulness and fusion is of poor quality, under higher outside pressure effect, (like 2MPa, continues 1min), and the phenomenon that will leak air causes the product hermeticity up-to-standard rate lower, and about about 70%.
Summary of the invention
The objective of the invention is the deficiency to above-mentioned existing technology existence, provide a kind of the needs in advance metalwork to be carried out oxidation processes, the sealing up-to-standard rate is high, the method for highly reliable sealing cuprous oxide semiconductor discharge plug.
The technical solution adopted for the present invention to solve the technical problems is: a kind of method of highly reliable sealing cuprous oxide semiconductor discharge plug, it is characterized in that, and comprise the steps; At first the lower end surface of semiconductor device apply contain the semi-conductive high-temperature glaze of cuprous oxide after sintering, the coaxial then centre electrode of packing into, locking nut welding are fixing, the coaxial sparking plug frame inner chamber of subsequently said modules, vitrification in advance being handled of putting into of seal glass blank, porcelain tube; Then said modules is put into special fixture; Incorporate in the stove together with anchor clamps one and to heat, carry out high intermediate temperature sealing, the completion of heating at twice, pressurize of sealing-in process; In each heating process; Porcelain tube through upper end in the sparking plug frame connects applies axial pressure to softening chunk glass end face, makes the chunk glass after softening fully fill up the sealing area space.
The present invention has following beneficial effect than existing technology.
The sealing up-to-standard rate is high, and does not need in advance metalwork to be carried out oxidation processes.The present invention places through the pretreated borosilicate seal glass of vitrification blank in the formed space of semiconductor device, sparking plug frame, centre electrode, the porcelain tube of cuprous oxide semiconductor discharge plug; At twice the heating, the pressurized high-temperature sintering; And, the porcelain tube end face acts on softening seal glass through being applied axial pressure; With abundant wetting contact of metal oxide layer; Fully fill up specific sealing area, reduce gap, bubble between the seal glass, effectively improved seal glass and sealing position on every side between the part; And the inner compactness of seal glass; The glass density at the centre electrode of increase seal glass and metal and the sparking plug frame of metal sealing position realizes the tightness of cuprous oxide semiconductor discharge plug ignition end and outside connecting end, thereby has solved the ropy problem of seal glass combination interface transition layer of patina and fusion.
Utilize encapsulating method provided by the invention, can guarantee that the cuprous oxide semiconductor property does not change on the one hand, reduced preprocessing process on the other hand again metalwork; Simultaneously, in first time heating and pressurizing process, the metalwork surface generates suitable patina; Seal glass is also softened, and pressurization makes the seal glass distortion contact with metal oxide film surface, can prevent that follow-up heat from making metal surface oxidation once more; Pressurization once more after heating is come out of the stove for the second time; Can increase the consistency of seal glass, improve the product hermeticity up-to-standard rate, the sealing up-to-standard rate can reach more than 95%.
The present invention adopt handle through vitrification in advance, have a Pyrex material than high softening temperature; Under certain heating-up temperature, oxidizing atmosphere situation; The sealing in sealing area space is accomplished in the sealing-in of axially exerting pressure to porcelain tube at twice; Further the sparking plug frame of the centre electrode of increase seal glass and metal and metal seals the glass density at position; Realize the tightness of cuprous oxide semiconductor discharge plug ignition end and outside connecting end, thereby improve the production up-to-standard rate of this type cuprous oxide semiconductor discharge plug.
Description of drawings
Concrete structure of the present invention is provided by following embodiment and accompanying drawing thereof, but does not therefore limit the present invention among the described scope of embodiments.
Fig. 1 is that semiconductor device applies glaze end structure schematic representation.
Fig. 2 is the composite structure schematic representation of semiconductor device, centre electrode, locking nut.
Fig. 3 is pack into the structural representation of sparking plug frame of semiconductor device.
Fig. 4 is the structural representation of cuprous oxide semiconductor discharge plug among the present invention.
Among the figure: 1. semiconductor device, 2. centre electrode, 3. seal glass blank, 4. sparking plug frame, 5. porcelain tube, 6. lining, 7. locking nut.
Embodiment
Fig. 1～Fig. 4 has described by semiconductor device 1, centre electrode 2, seal glass blank 3, sparking plug frame 4, porcelain tube 5 etc., the cuprous oxide semiconductor discharge plug of assembling formation successively.Wherein, semiconductor device 1 is sandwiched between centre electrode 2 and the locking nut 7.Semiconductor device 1 is to be coated with the individual components that high temperature " sintering " becomes behind the semi-conducting glaze in advance, with the sparking plug frame 4 of packing into such as seal glass, carries out the sparking plug glass capsulation then, and this process is called " sealing-in ".The end of centre electrode 2 and locking nut 7 connects firmly.Seal glass blank 3 can adopt a kind of that handle through vitrification in advance, have a Pyrex material than high softening temperature.
The method of the highly reliable sealing cuprous oxide semiconductor discharge plug that the present invention proposes is to get angry end face at the semiconductor device of cuprous oxide semiconductor discharge plug at applying in advance and contain the semi-conductive high-temperature glaze of cuprous oxide, places borosilicate seal glass blank 3; Heating, pressurized high-temperature sintering are placed between centre electrode 2 and porcelain tube 5 through the pretreated borosilicate seal glass of vitrification blank 3 at twice; And act on softening seal glass blank 3 through the porcelain tube end face being applied axial pressure; Make the complete fusion of seal glass in the sealing-in process; With abundant wetting contact of metal oxide layer, fully fill up the sealing area of semiconductor device, sparking plug frame, centre electrode, the formed particular space of porcelain tube.Twice heating and pressurizing accomplished the sealing-in process.For the first time relatively low; The metal surface can generate 780 ℃～870 ℃ temperature heat tracings of suitable depth patina; Seal glass blank 3 receives thermal softening simultaneously, acts on the softening seal glass blank 3 through porcelain tube 5 end faces being applied external force, and seal space is filled in softening seal glass blank 3 distortion; And contact with patina on the metalwork, prevent to add for the second time and pine for the metalwork surface and continue oxidation; Be for the second time at 900 ℃～980 ℃ high temperature, the complete fusion of seal glass, with abundant wetting contact of metal oxide layer, the end face to porcelain tube when coming out of the stove applies axial pressure, cooling afterwards seal glass is solidified and is reached sealing.
What apply in the lower end surface of semiconductor device 1 contains the semi-conductive high-temperature glaze of cuprous oxide, is to grind preparation according to suitable ratio.Described glaze layer can be Cu by a certain percentage
2O, Cu powder, Cr
2O
3, potassic feldspar, SiO
2, white clay, MgCO
3, CaCO
3Mix, grind the high-temperature glaze that forms.Said certain proportion is the conventional ratio of known technology.Be coated on the high-temperature glaze of semiconductor device 1, after drying through certain high temperature sintering in the semiconductor device local surfaces.Present embodiment is that high-temperature glaze is coated in semiconductor device 1 dotted line end face shown in Figure 1, dries, and sintering.
Process definite shape in advance, slowly be heated to 700 ℃～760 ℃ than the Pyrex material of high softening temperature, keep 10min～30min vitreous to become definite shape.
Seal glass blank 3 can be the borosilicate glass powder compression moulding of mixing binder by a certain percentage, and said certain proportion is the conventional ratio of known technology.When moulding, in advance borosilicate glass powder is pressed into the column blank of certain intensity, slowly heating is warming up to 700 ℃～760 ℃ vitreous of Pyrex vitrification point with it, cooling.
The concrete steps of sealing cuprous oxide semiconductor discharge plug comprise,
According to Fig. 2, with semiconductor device 1, locking nut 7, coaxial being loaded on the centre electrode 2, and axially apply pressure in opposite directions in centre electrode 2 ends and locking nut 7, and fix through laser bonding;
According to Fig. 3, will pass through in the coaxial sparking plug frame 4 of packing into of assembly of above-mentioned assembling, the coaxial again lining 6 of packing into, and fixing with the lining 6 of wedge shape ring-type;
According to Fig. 4, successively with seal glass blank 3 and porcelain tube 5 coaxial being loaded in the sparking plug frame 4.Cuprous oxide semi-conductor electricity nozzle assembly shown in Figure 4 is put into special fixture; This special fixture is the cuprous oxide semiconductor discharge plug anchor clamps that must adopt commonly used, generally can both accomplish, is not described further here.
The assembly that will pass through above-mentioned assembling is together with anchor clamps, and one incorporates in the oven and heats.Heating for the first time with 780 ℃～870 ℃ heating-up temperature preheating 10min～30min, when seal glass blank 3 is softened to the semi-molten state, applies axial pressure to porcelain tube 5 end faces under oxidizing atmosphere, axially apply 60kgf/mm along porcelain tube 5
2～100kgf/mm
2Pressure, action time 1min～5min; For the second time be heated to 900 ℃～980 ℃ high temperature, make the 3 complete fusions of seal glass blank, and with the abundant wetting combination that contacts of metal oxide layer, apply axial pressure when coming out of the stove once more.Axially apply 20kgf/mm along porcelain tube 5
2～60kgf/mm
2Pressure, action time 1min～3min, treat natural cooling after, the combinations thereof part is carried out annealing in process.
Carry out airtight test at last: apply 2MPa air pressure from cuprous oxide semiconductor discharge plug ignition end, keep 1min, the other end of cuprous oxide semiconductor discharge plug does not generally allow 2ml gas leakage.
Claims (6)
1. the method for a highly reliable sealing cuprous oxide semiconductor discharge plug; It is characterized in that, comprise the steps, at first sintering after the lower end surface of semiconductor device (1) applies the glaze layer; In the chunk glass (3) and the coaxial sparking plug frame (4) of packing into of porcelain tube (5) that will handle through vitrification in advance again; Then said modules is put into anchor clamps, incorporate in the stove together with anchor clamps one and heat, carry out high intermediate temperature sealing; The completion of heating at twice, pressurize of sealing-in process, in each heating process, the porcelain tube (5) through upper end in the sparking plug frame (4) connects applies axial pressure to softening chunk glass end face, makes the chunk glass (3) after softening fully fill up the sealing area space.
2. the method for highly reliable sealing cuprous oxide semiconductor discharge plug according to claim 1; It is characterized in that heating for the first time can generate the suitable depth patina in relatively low, metal surface, and less than 870 ℃ temperature heat tracing; Make seal glass blank (3) receive thermal softening; Act on softening seal glass blank (3) through porcelain tube (5) end face is applied external force simultaneously, seal space is filled in distortion, and contacts with patina on the metalwork; Be in greater than 900 ℃ of high temperature, to heat for the second time; Seal glass blank (3) is fusion and abundant wetting contact of metal oxide layer fully, and the end face of porcelain tube is applied axial pressure, and cooling back seal glass solidifies and reaches sealing.
3. the method for highly reliable sealing cuprous oxide semiconductor discharge plug according to claim 1 and 2; It is characterized in that; Heating is under oxidizing atmosphere for the first time; With 780 ℃～870 ℃ heating-up temperature preheating 10min～30min, when seal glass blank (3) is softened to the semi-molten state, axially apply 60kgf/mm along porcelain tube (5)
2～100kgf/mm
2Pressure, action time 1min～5min; For the second time be heated to 900 ℃～980 ℃ high temperature, make seal glass blank (3) fusion fully, and with the abundant wetting combination that contacts of metal oxide layer, apply axial pressure when coming out of the stove once more, axially apply 20kgf/mm along porcelain tube (5)
2～60kgf/mm
2Pressure, action time 1min～3min, treat natural cooling after, the combinations thereof part is carried out annealing in process.
4. the method for highly reliable sealing cuprous oxide semiconductor discharge plug according to claim 1 is characterized in that, described glaze layer is Cu by a certain percentage
2O, Cu powder, Cr
2O
3, potassic feldspar, SiO
2, white clay, MgCO
3, CaCO
3Mix, grind the high-temperature glaze that forms.
5. the method for highly reliable sealing cuprous oxide semiconductor discharge plug according to claim 1; It is characterized in that; Described seal glass blank (3) is the borosilicate glass powder of mixing binder in proportion, is pressed into definite shape in advance, slowly heating; Be warming up to 700 ℃～760 ℃ vitreous of Pyrex vitrification point, the cooling back becomes column seal glass blank.
6. the method for highly reliable sealing cuprous oxide semiconductor discharge plug according to claim 1 is characterized in that, described glaze layer is to contain the semi-conductive high-temperature glaze of cuprous oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102896400A CN102410124A (en) | 2010-09-21 | 2010-09-21 | Highly reliable cuprous oxide semiconductor sparking plug sealing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102896400A CN102410124A (en) | 2010-09-21 | 2010-09-21 | Highly reliable cuprous oxide semiconductor sparking plug sealing method |
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| CN102410124A true CN102410124A (en) | 2012-04-11 |
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| CN2010102896400A Pending CN102410124A (en) | 2010-09-21 | 2010-09-21 | Highly reliable cuprous oxide semiconductor sparking plug sealing method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107324807A (en) * | 2017-06-20 | 2017-11-07 | 西安交通大学 | A kind of preparation method of low-pressure high-energy SiC semiconductor sparking plug material |
| CN107857583A (en) * | 2017-11-08 | 2018-03-30 | 陕西航空电气有限责任公司 | A kind of cuprous oxide semiconductor ceramic material and preparation method thereof |
| CN109538357A (en) * | 2018-11-19 | 2019-03-29 | 陕西航空电气有限责任公司 | A kind of small semiconductor sparking plug structure and machining method |
| CN110713346A (en) * | 2019-10-30 | 2020-01-21 | 陕西航空电气有限责任公司 | Inorganic sealing material and application method thereof on ignition nozzle |
| CN113429118B (en) * | 2021-06-17 | 2022-05-24 | 贵州航天电器股份有限公司 | Glass blank powder injection molding process |
| CN115259695A (en) * | 2022-08-25 | 2022-11-01 | 济宁市海富电子科技有限公司 | Intelligent watch bottom cover compounded with glass and manufacturing method thereof |
| CN116139666A (en) * | 2023-04-18 | 2023-05-23 | 大庆德斯曼环保设备有限公司 | Environmental protection exhaust emission treatment equipment |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107324807A (en) * | 2017-06-20 | 2017-11-07 | 西安交通大学 | A kind of preparation method of low-pressure high-energy SiC semiconductor sparking plug material |
| CN107324807B (en) * | 2017-06-20 | 2020-05-22 | 西安交通大学 | Preparation method of low-voltage high-energy SiC semiconductor electric nozzle material |
| CN107857583A (en) * | 2017-11-08 | 2018-03-30 | 陕西航空电气有限责任公司 | A kind of cuprous oxide semiconductor ceramic material and preparation method thereof |
| CN107857583B (en) * | 2017-11-08 | 2020-11-13 | 陕西航空电气有限责任公司 | Cuprous oxide semiconductor ceramic material and preparation method thereof |
| CN109538357A (en) * | 2018-11-19 | 2019-03-29 | 陕西航空电气有限责任公司 | A kind of small semiconductor sparking plug structure and machining method |
| CN109538357B (en) * | 2018-11-19 | 2021-01-01 | 陕西航空电气有限责任公司 | Small semiconductor electric nozzle structure and processing method |
| CN110713346A (en) * | 2019-10-30 | 2020-01-21 | 陕西航空电气有限责任公司 | Inorganic sealing material and application method thereof on ignition nozzle |
| CN110713346B (en) * | 2019-10-30 | 2022-06-07 | 陕西航空电气有限责任公司 | Inorganic sealing material and application method thereof on ignition nozzle |
| CN113429118B (en) * | 2021-06-17 | 2022-05-24 | 贵州航天电器股份有限公司 | Glass blank powder injection molding process |
| CN115259695A (en) * | 2022-08-25 | 2022-11-01 | 济宁市海富电子科技有限公司 | Intelligent watch bottom cover compounded with glass and manufacturing method thereof |
| CN116139666A (en) * | 2023-04-18 | 2023-05-23 | 大庆德斯曼环保设备有限公司 | Environmental protection exhaust emission treatment equipment |
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Application publication date: 20120411 |